Substrate support assembly, showerhead assembly, and substrate processing apparatus including same

Abstract

The present invention provides a substrate support assembly, a showerhead assembly, and a substrate processing apparatus including the same, which can precisely control plasma distribution in an edge region of a processing space. The substrate support assembly for supporting a substrate in a substrate processing apparatus using plasma according to the present invention comprises: a ceramic support plate for supporting the substrate; the base plate is made of a metal material and is positioned below the supporting plate; the focusing ring is made of a metal material and is positioned on the outer side of the supporting plate; and the outer side ring is positioned on the outer side of the focusing ring. The outer ring is made of a quartz material in which carbon is mixed.

Description

Substrate support assembly, nozzle assembly, and substrate processing apparatus including the thereof Technical Field

[0001] The present invention relates to a substrate support assembly for supporting a substrate in a system for processing a substrate using plasma, a nozzle assembly for supplying processing gas to the processing space of the substrate, and a substrate processing apparatus including the substrate support assembly and the nozzle assembly. Background Technology

[0002] Semiconductor (or display) manufacturing processes are processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these processes, cleanrooms are equipped with semiconductor manufacturing equipment to perform the respective processes on the substrates that are fed into the equipment.

[0003] Plasma-based processes are widely used in semiconductor manufacturing, such as etching and vapor deposition. Plasma processing is performed by placing a substrate below a plasma processing space and applying an RF (radio frequency) signal through electrodes located above or below, along with a supply of fluid for plasma processing.

[0004] For plasma processing, a lower electrode is positioned at the bottom of the process chamber, and an upper electrode is positioned at the top. Plasma is generated by the electromagnetic field between the lower and upper electrodes. Typically, the plasma is unevenly distributed radially across the processing area of ​​the substrate. Various schemes for controlling the plasma distribution are described. In particular, the uniformity of the substrate's processing characteristics can vary greatly at the periphery of the processing space due to the shape of the plasma, thus requiring precise plasma control. Summary of the Invention

[0005] The present invention provides a substrate support assembly, a nozzle assembly, and a substrate processing apparatus including the present invention, which can precisely control the plasma distribution in the edge region of the processing space.

[0006] According to the present invention, a substrate support assembly for supporting a substrate in a plasma-utilizing substrate processing apparatus comprises: a support plate of ceramic material supporting the substrate; a base plate of metallic material located below the support plate; a focusing ring of metallic material located outside the support plate; and an outer ring located outside the focusing ring. The outer ring is made of a quartz material mixed with carbon.

[0007] The nozzle assembly for dispersing processing gas into a processing space of a substrate in a plasma-utilizing substrate processing apparatus according to the present invention comprises: a gas distribution plate coupled to the upper part of a cavity forming the processing space; a nozzle coupled to the lower part of the gas distribution plate; and an upper ring disposed outside the nozzle. The upper ring is made of a quartz material mixed with carbon.

[0008] The plasma-based substrate processing apparatus according to the present invention includes: a process chamber forming a processing space for the substrate; a substrate support assembly supporting the substrate; and a nozzle assembly dispersing processing gas into the processing space. The substrate support assembly includes: a support plate supporting the substrate; a base plate located below the support plate; a focusing ring of metallic material located outside the support plate; and an outer ring located outside the focusing ring. The nozzle assembly includes: a gas distribution plate attached to the upper part of the process chamber; a nozzle attached to the lower part of the gas distribution plate; and an upper ring disposed outside the nozzle. At least one of the outer ring and the upper ring is made of a quartz material mixed with carbon.

[0009] According to the present invention, the outer ring or the upper ring is made of a quartz material that is electrically conductive by mixing carbon or titanium, which makes impedance adjustment possible in the edge region of the processing space of the substrate, and thus allows for more precise control of plasma distribution in the edge region. Attached Figure Description

[0010] Figure 1 shows a simplified structure of the substrate processing apparatus according to the present invention.

[0011] Figure 2 is a diagram of the edge region of the processing space of the magnified substrate.

[0012] Figures 3a to 3g show simulation results of plasma distribution with respect to changes in the materials of the outer and upper rings.

[0013] Figure 4 shows the variation in plasma homogeneity based on changes in the materials of the outer and upper rings.

[0014] (Explanation of reference numerals in the attached diagram)

[0015] 10: Substrate processing apparatus

[0016] 100: Cavity

[0017] 200: Substrate support assembly

[0018] 210: Support plate

[0019] 220: Base plate

[0020] 260: Focusing ring

[0021] 270: Outer ring

[0022] 300: Nozzle assembly

[0023] 310: Sprayer Head

[0024] 320: Gas distribution plate

[0025] 330: IUD insertion Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0027] To clearly illustrate the invention, irrelevant parts have been omitted, and the same or similar components are marked with the same reference numerals throughout the specification.

[0028] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0029] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.

[0030] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.

[0031] Figure 1 shows a simplified structure of the substrate processing apparatus 10 according to the present invention. The substrate processing apparatus 10 processes the substrate W using plasma. The substrate processing apparatus 10 includes a cavity 100, a substrate support assembly 200, a nozzle assembly 300, a gas supply unit 400, a plasma source, a liner 500, and a baffle 600.

[0032] The cavity 100 has a processing space 102 inside for performing substrate processing processes. The cavity 100 is provided in a closed shape. The cavity 100 may be provided with a conductive material. For example, the cavity 100 may be provided with a material containing metal. The cavity 100 may be provided with aluminum. The cavity 100 may be grounded. An exhaust port 104 is formed on the bottom surface of the cavity 100. The exhaust port 104 is connected to an exhaust line 151. The exhaust line 151 is connected to a pump (not shown). Reaction byproducts generated during the process and gases retained in the internal space of the cavity 100 can be discharged to the outside through the exhaust line 151. Through the exhaust process, the internal pressure of the cavity 100 is reduced to a predetermined pressure. In contrast, a separate pressure reducing component (not shown) may be provided to reduce the internal pressure of the processing space 102 to a predetermined pressure.

[0033] A heater (not shown) is provided on the wall of cavity 100. The heater heats the wall of cavity 100. The heater is electrically connected to a heating power source (not shown). The heater generates heat by resisting the current applied from the heating power source. The heat generated by the heater is transferred to the internal space. The processing space 102 is maintained at a predetermined temperature by the heat generated by the heater. The heater is provided with a hot wire in the shape of a coil. Multiple heaters may be provided on the wall of cavity 100.

[0034] A substrate support assembly 200 is disposed inside the cavity 100. The substrate support assembly 200 supports the substrate W within the processing space 102. The substrate support assembly 200 may provide an electrostatic chuck for adsorbing the substrate W using electrostatic force. The substrate support assembly 200 may include a support plate 210, a base plate 220, a focusing ring 260, and an outer ring 270. In addition, the substrate support assembly 200 may include an isolation plate 230, a lower cover 240, a lower support member 245, a power supply rod 250, an edge electrode ring 281, an edge cover ring 282, a fastening ring 283, and an isolation ring 284.

[0035] A substrate W is placed above a support plate 210. The support plate 210 is provided in a disk shape. The support plate 210 may be made of a dielectric substance. The support plate 210 receives an external power supply and applies electrostatic force to the substrate W. Electrostatic electrodes are disposed inside the support plate 210. If a DC power supply is applied to the electrostatic electrodes, the substrate W can be pressed tightly against the support plate 210 by electrostatic force. A heater layer for heating the substrate W may be disposed inside the support plate 210.

[0036] A substrate 220 is provided below a support plate 210. The upper surface of the substrate 220 can contact the lower surface of the support plate 210. An adhesive layer can be disposed between the substrate 220 and the support plate 210. A sealing ring for protecting the adhesive layer from the effects of plasma can be disposed on the outside of the adhesive layer. The substrate 220 can be provided in a disk shape. The substrate 220 is provided of a conductive material. The substrate 220 can be provided of aluminum (Al). A fluid passage can be formed inside the substrate 220. A refrigerant for cooling the substrate W can flow through the fluid passage. An isolation plate 230 is disposed below the substrate 220. The isolation plate 230 can be provided of an insulating material.

[0037] The lower cover 240 supports the isolation plate 230. The lower cover 240 may be provided to contact the side of the isolation plate 230. The lower cover 240 may be provided to contact the lower edge region of the isolation plate 230. For example, the lower cover 240 may have a cylindrical shape with an open upper and lower portion. Additionally, the lower cover 240 may have an inner step to allow the isolation plate 230 to be supported by the lower cover 240. The lower cover 240 may be provided of an insulating material. A lower support member 245 is disposed below the lower cover 240. The lower support member 245 is disposed below the lower cover 240 and supports the lower cover 240. Additionally, the lower support member 245 may be provided of a conductive material. For example, the lower support member 245 may be provided of a material containing metal. Furthermore, the lower support member 245 may be electrically connected to the cavity 100.

[0038] The power supply rod 250 can apply power to the substrate 220. The power supply rod 250 can be electrically connected to the substrate 220. The power supply rod 250 can be connected to a lower power supply 252. The lower power supply 252 can provide a high-frequency power source for generating high-frequency power. The high-frequency power source can provide RF (radio frequency) power. The power supply rod 250 receives high-frequency power from the lower power supply 252 and transmits it to the substrate 220. The substrate 220, electrically connected to the power supply rod 250, can function as a lower electrode.

[0039] The power supply rod 250 can be made of a conductive material. For example, the power supply rod 250 can be made of a material containing metal. The power supply rod 250 can be a metal rod. The power supply rod 250 can be cylindrical. The power supply rod 250 can be a cylindrical shape with an open top and bottom. Additionally, the power supply rod 250 can be connected to a matching adapter 254. The power supply rod 250 can be connected to the downstream power supply 252 via the matching adapter 254. The matching adapter 254 can perform impedance matching.

[0040] The ring assembly is disposed at the edge of the substrate support assembly 200. The ring assembly includes a focusing ring 260, an outer ring 270, an edge electrode ring 281, an edge cover ring 282, a fastening ring 283, and an isolation ring 284. The focusing ring 260 is provided to surround the support plate 210.

[0041] The focusing ring 260 can be made of silicon material, which concentrates ions generated during the plasma processing onto the substrate W.

[0042] An outer ring 270 is formed outside the focusing ring 260 and is provided to surround the focusing ring 260. The outer ring 270 may be made of a quartz material. In particular, the outer ring 270 may be made of a quartz material mixed with carbon or titanium.

[0043] An edge electrode ring 281 is provided to control the impedance of the edge region of the substrate support assembly 200. The edge electrode ring 281 may be made of an electrically conductive metallic material. The edge electrode ring 281 may be electrically connected to an edge impedance control circuit 290. The edge impedance control circuit 290 may include one or more impedance elements (e.g., inductors, capacitors). The edge impedance control circuit 290 may include variable impedance elements. Impedance control by the edge impedance control circuit 290 allows adjustment of the impedance in the edge region of the substrate support assembly 200. An edge cover ring 282 is provided to surround the edge electrode ring 281. The edge cover ring 282 may be made of an insulating material. A fastening ring 283, located above the edge cover ring 282, secures the focusing ring 260. An isolation ring 284, surrounding the outer surface of the substrate support assembly 200, electrically insulates the periphery of the ring assembly.

[0044] The nozzle assembly 300 can disperse the gas supplied from above. The nozzle assembly 300 can disperse the processing gas into the processing space 102 of the substrate W. The nozzle assembly 300 can ensure that the gas supplied by the gas supply unit 400 is uniformly supplied into the processing space 102. The nozzle assembly 300 includes a nozzle 310, a gas distribution plate 320, and an upper ring 330. Additionally, the nozzle assembly 300 may include a support ring 340.

[0045] The nozzle 310 is located above the substrate support assembly 200. The nozzle 310 is disposed below the gas distribution plate 320. The nozzle 310 can be provided as a plate shape with a fixed or variable thickness. The cross-section of the nozzle 310 can be provided to have the same shape and cross-sectional area as the support plate 210. A plurality of gas supply holes 312 are formed in the nozzle 310. The gas supply holes 312 can be formed vertically through the top and bottom of the nozzle 310. The nozzle 310 can be grounded.

[0046] Referring to FIG2, the nozzle 310 may include a circular plate 314 having a gas supply hole 312 and a nozzle ring 316 supporting the circular plate 314 without a gas supply hole 312. From a planar viewpoint viewed from above, the nozzle ring 316 may overlap with a portion of the focusing ring 260 and the outer ring 270.

[0047] A gas distribution plate 320 is disposed on the upper part of the nozzle 310. The gas distribution plate 320 can be attached to the upper part of the cavity 100. The gas distribution plate 320 allows the gas supplied from above to diffuse. A gas inlet hole 322 can be formed in the gas distribution plate 320. The gas inlet hole 322 can be formed at a position corresponding to the gas supply hole 312. The gas inlet hole 322 can communicate with the gas supply hole 312. Gas supplied from above the nozzle assembly 300 can sequentially pass through the gas inlet hole 322 and the gas supply hole 312 to be supplied downwards from the nozzle 310. The gas distribution plate 320 can be made of a metallic material.

[0048] The upper ring 330 is configured to surround the nozzle 310 and the gas distribution plate 320. The upper ring 330 may be provided in an overall circular ring shape. The upper ring 330 may be made of quartz material. In particular, the upper ring 330 may be made of quartz material mixed with carbon or titanium. A support ring 340 is provided to support the upper ring 330. The support ring 340 may be located on top of the gasket 500. The support ring 340 and the gasket 500 may be grounded. At least one of the support ring 340 and the gasket 500 may have a heater embedded within it.

[0049] From a top-viewing plane, the upper ring 330 may not overlap with the focusing ring 260, but may overlap with the outer ring 270 and the baffle 600.

[0050] A gas supply unit 400 supplies gas inside the cavity 100. The gas supplied by the gas supply unit 400 can be excited into a plasma state by a plasma source. The gas supply unit 400 includes a gas supply port 410, a gas supply line 420, and a gas storage unit 430. The gas supply port 410 is located at the upper center of the cavity 100. The gas supply port 410 supplies process gas to the gas distribution plate 320. The gas supply line 420 connects the gas supply port 410 and the gas storage unit 430. The gas supply line 420 supplies the process gas stored in the gas storage unit 430 to the gas supply port 410. A valve 421 is provided on the gas supply line 420. The valve 421 opens and closes the gas supply line 420 to regulate the flow rate of the process gas supplied through the gas supply line 420.

[0051] Gasket 500 prevents damage to the inner wall of cavity 100 during the process. Gasket 500 prevents impurities generated during the process from being deposited on the inner wall. Gasket 500 can be made of aluminum. The outer gasket 500 protects the inner surface of cavity 100. During the process gas activation, an arc discharge can occur inside cavity 100. The arc discharge can damage cavity 100. Gasket 500 protects the inner surface of cavity 100 and prevents damage to the inner surface of cavity 100 by arc discharge.

[0052] A baffle 600 is located between the inner wall of the cavity 100 and the substrate support assembly 200. The baffle 600 is provided in an annular shape. A plurality of through holes are formed in the baffle 600. Gas supplied in the cavity 100 is discharged to the exhaust port 104 through the through holes of the baffle 600. The gas flow can be controlled according to the shape of the baffle and the shape of the through holes.

[0053] Figure 2 is a diagram of the edge region A of the processing space 102 of the magnified substrate. In the edge region A of the processing space 102, the plasma distribution is mainly controlled by the focusing ring 260 and the edge electrode ring 281. In plasma-based processes, precise control of the plasma distribution is required up to the periphery of the outer ring 270 and the upper ring 330 in order to precisely control the process characteristics in the edge region A of the substrate W. However, even with the focusing ring 260 and the edge electrode ring 281, controlling the plasma up to the periphery of the outer ring 270 and the upper ring 330 is very difficult.

[0054] Furthermore, as the plasma treatment process is repeatedly executed, treatment byproducts can become particles and adhere to the periphery of the outer ring 270 and the upper ring 330. Typically, the plasma is concentrated in the central region, making it difficult to remove the particles located around the periphery of the outer ring 270 and the upper ring 330 using plasma.

[0055] Therefore, this invention proposes a scheme for more precise control of the plasma around the outer ring 270 and the upper ring 330. Typically, the outer ring 270 and the upper ring 330 are made of quartz. Quartz is an insulator that exhibits high electrical resistance at both room temperature (approximately 24°C) and high temperature (approximately 200°C). Quartz has a resistance of 10... 15 Up to 10 17 Volume resistivity (Ω*cm).

[0056] Based on experiments conducted by the applicant, it has been confirmed that quartz mixed with carbon or titanium exhibits higher electrical conductivity than ordinary quartz. For example, quartz mixed with carbon at a weight ratio (wt%) of 0.01% to 1% has a conductivity of 10 at room temperature. 16 Up to 10 17 It has a volume resistivity of (Ω*cm), but exhibits a resistance of 10 at 200℃. 12 Up to 1013 The volume resistivity (Ω*cm) confirmed a certain level of electrical conductivity at high temperatures. Furthermore, quartz mixed with carbon at a weight ratio of 1% to 5% (wt%) exhibited a conductivity of 10 Ω*cm at room temperature. 6 Up to 10 7 The volume resistivity (Ω*cm) has 10 at 200℃. 5 Up to 10 6 The volume resistivity (Ω*cm) confirmed that it has higher electrical conductivity at both room temperature and high temperature.

[0057] That is, the volume resistivity of the outer ring 270 can be adjusted according to the weight ratio of carbon (or titanium) in the outer ring 270. Additionally, the volume resistivity of the upper ring 330 can be adjusted according to the weight ratio of carbon (or titanium) in the upper ring 330.

[0058] In this invention, at least one of the outer ring 270 and the upper ring 330 can be made of a quartz material mixed with carbon. When the outer ring 270 or the upper ring 330 is made of quartz, which has electrical conductivity through a mixture of carbon and titanium, more precise control of the plasma distribution in the edge region of the processing space 102 can be achieved. According to the invention, the plasma distribution in the edge region of the processing space 102 can be varied according to the conductivity of the outer ring 270. Furthermore, the plasma distribution in the edge region of the processing space 102 can be varied according to the conductivity of the upper ring 330. That is, the plasma distribution in the edge region of the processing space 102 can be varied according to the conductivity of the outer ring 270 and the upper ring 330.

[0059] Furthermore, in this invention, by applying an electrically conductive outer ring 270 and / or an upper ring 330 to the substrate processing apparatus 10, the plasma region can be expanded to control the angle of ions incident from the edge region of the substrate or the SCD (slope critical dimension).

[0060] In particular, the region where plasma is formed can extend outward to the periphery of the outer ring 270 and the upper ring 330. This is because the volume resistivity of the outer ring 270 or the upper ring 330 decreases while the dielectric constant increases, resulting in a decrease in impedance and thus an expansion of the electric field. However, if the outer ring 270 or the upper ring 330 has excessively high electrical conductivity, an electric arc may occur inside the processing space 102. Therefore, the outer ring 270 or the upper ring 330 is required to have an appropriate level of volume resistivity.

[0061] Therefore, according to the present invention, the plasma distribution in the edge region of the processing space 102 can be controlled by utilizing the volume resistivity variation of the outer ring 270 or the upper ring 330. That is, the material of the outer ring 270 or the upper ring 330 (in particular, the composition ratio of carbon or titanium) can be selected to achieve the desired plasma distribution.

[0062] Figures 3a to 3g show simulation results of plasma distribution with respect to changes in the materials of the outer and upper rings.

[0063] Figure 3a, as a comparative example, shows the plasma distribution when the outer ring 270 and the upper ring 330 are both made of ordinary quartz material.

[0064] In both the first and second embodiments, the upper ring 330 is composed of quartz mixed with carbon, and the outer ring 270 is composed of quartz. In the first embodiment, the weight percentage of carbon in the upper ring 330 is 0.01% to 1%. In the first embodiment, the upper ring 330 can be electrically conductive at high temperatures. In the second embodiment, the weight percentage of carbon in the upper ring 330 is 1% to 5%. In the second embodiment, the upper ring 330 can be electrically conductive at both room temperature and high temperatures.

[0065] Figure 3b shows the plasma distribution as a first embodiment when the upper ring 330 is made of quartz material mixed with carbon at a weight ratio (wt%) of 0.01% to 1%, and the outer ring 270 is made of ordinary quartz.

[0066] Figure 3c shows the plasma distribution as a second embodiment when the upper ring 330 is made of quartz material mixed with carbon at a weight ratio of 1% to 5% (wt%), and the outer ring 270 is made of ordinary quartz.

[0067] In the third and fourth embodiments, the outer ring 270 is made of quartz mixed with carbon, and the upper ring 330 is made of quartz. In the third embodiment, the weight percentage of carbon in the outer ring 270 is 0.01% to 1%. In the third embodiment, the outer ring 270 can be electrically conductive at high temperatures. In the fourth embodiment, the weight percentage of carbon in the outer ring 270 is 1% to 5%. In the fourth embodiment, the outer ring 270 can be electrically conductive at both room temperature and high temperatures.

[0068] Figure 3d shows the plasma distribution as a third embodiment when the upper ring 330 is made of ordinary quartz and the outer ring 270 is made of quartz material mixed with carbon at a weight ratio (wt%) of 0.01% to 1%.

[0069] Figure 3e shows the plasma distribution as a fourth embodiment when the upper ring 330 is made of ordinary quartz and the outer ring 270 is made of quartz material mixed with carbon at a weight ratio (wt%) of 1% to 5%.

[0070] In the fifth and sixth embodiments, the outer ring 270 and the upper ring 330 are made of quartz mixed with carbon. In the fifth embodiment, the weight ratio of carbon in the outer ring 270 and the upper ring 330 is 0.01% to 1%. In the fifth embodiment, the outer ring 270 and the upper ring 330 can be electrically conductive at high temperatures. In the sixth embodiment, the weight ratio of carbon in the outer ring 270 and the upper ring 330 is 1% to 5%. The outer ring 270 and the upper ring 330 can be electrically conductive at both room temperature and high temperatures. In another embodiment, the outer ring 270 may be made of quartz mixed with carbon at a weight ratio of 0.01% to 1%, and the upper ring 330 may be made of quartz mixed with carbon at a weight ratio of 1% to 5%. Alternatively, the outer ring 270 may be made of quartz mixed with carbon at a weight ratio of 1% to 5%, and the upper ring 330 may be made of quartz mixed with carbon at a weight ratio of 0.01% to 1%.

[0071] Figure 3f shows the plasma distribution as a fifth embodiment when the upper ring 330 is made of quartz material mixed with carbon at a weight ratio (wt%) of 0.01% to 1%, and the outer ring 270 is made of quartz material mixed with carbon at a weight ratio (wt%) of 0.01% to 1%.

[0072] Figure 3g shows the plasma distribution as a sixth embodiment when the upper ring 330 is made of quartz material mixed with carbon at a weight ratio of 1% to 5% (wt%), and the outer ring 270 is made of quartz material mixed with carbon at a weight ratio of 1% to 5% (wt%).

[0073] As shown in Figures 3a to 3g and Figure 4, it was confirmed that the plasma distribution in the edge region of the processing space 102 changed by about 3% due to the material change of the upper ring 330 or the outer ring 270.

[0074] Figure 4 illustrates the variation in plasma homogeneity based on changes in the materials of the outer ring 270 and the upper ring 330. In Figure 4, homogeneity represents the ratio of plasma density in the center to the edge regions, meaning that the higher the ratio, the more uniform the plasma density from the center region to the edge region of the processing space 102.

[0075] Referring to Figure 4, it is confirmed that the plasma density distribution from the center to the edge region can be variably controlled by changing the material of the upper ring 330 or the outer ring 270.

[0076] Furthermore, by expanding the area where plasma exists, particles remaining around the outer ring 270 and the upper ring 330 can be effectively removed by plasma.

[0077] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.

[0078] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. A substrate support assembly for supporting a substrate in a plasma-based substrate processing apparatus, the substrate support assembly comprising: Support plate, supporting the substrate; A base plate is located below the support plate; A focusing ring is located on the outer side of the support plate; And an outer ring, located outside the focusing ring, the outer ring being made of a quartz material mixed with carbon.

2. The substrate support assembly according to claim 1, wherein, The volume resistivity of the outer ring is adjusted according to the weight ratio of carbon in the outer ring.

3. The substrate support assembly according to claim 1, wherein, The weight percentage of carbon in the outer ring is 0.01% to 1%.

4. The substrate support assembly according to claim 1, wherein, The weight percentage of carbon in the outer ring is 1% to 5%.

5. The substrate support assembly according to claim 1, wherein, Depending on the conductivity of the outer ring, the plasma distribution in the edge region of the processing space of the substrate changes.

6. A nozzle assembly for dispersing processing gas into a processing space of a substrate in a plasma-utilizing substrate processing apparatus, the nozzle assembly comprising: A gas distribution plate is attached to the upper part of the cavity forming the processing space; The nozzle is attached to the lower part of the gas distribution plate; And an upper ring, disposed on the outside of the nozzle, the upper ring being made of quartz material mixed with carbon.

7. The nozzle assembly according to claim 6, wherein, The volume resistivity of the upper ring changes depending on the weight ratio of carbon in the upper ring.

8. The nozzle assembly according to claim 6, wherein, The weight percentage of carbon in the upper ring is 0.01% to 1%.

9. The nozzle assembly according to claim 6, wherein, The weight percentage of carbon in the upper ring is 1% to 5%.

10. The nozzle assembly according to claim 9, wherein, The plasma distribution in the edge region of the processing space changes according to the conductivity of the upper ring.

11. A substrate processing apparatus utilizing plasma, the substrate processing apparatus comprising: The process cavity forms the processing space for the substrate; A substrate support assembly that supports the substrate; The system includes a nozzle assembly for dispersing processing gas into the processing space. The substrate support assembly includes: a support plate for supporting the substrate; a base plate located below the support plate; a focusing ring made of metallic material located outside the support plate; and an outer ring located outside the focusing ring. The nozzle assembly includes: a gas distribution plate attached to the upper part of the process chamber; a nozzle attached to the lower part of the gas distribution plate; and an upper ring disposed outside the nozzle. At least one of the outer ring and the upper ring is made of a quartz material mixed with carbon.

12. The substrate processing apparatus according to claim 11, wherein, The volume resistivity of the outer ring and / or the upper ring changes depending on the weight ratio of carbon in the outer ring and / or the upper ring.

13. The substrate processing apparatus according to claim 11, wherein, The outer ring is made of quartz mixed with carbon, and the upper ring is made of quartz.

14. The substrate processing apparatus according to claim 13, wherein, The weight percentage of carbon in the outer ring is 0.01% to 1%.

15. The substrate processing apparatus according to claim 13, wherein, The weight percentage of carbon in the outer ring is 1% to 5%.

16. The substrate processing apparatus according to claim 11, wherein, The upper ring is made of quartz mixed with carbon, and the outer ring is made of quartz.

17. The substrate processing apparatus according to claim 16, wherein, The weight percentage of carbon in the upper ring is 0.01% to 1%.

18. The substrate processing apparatus according to claim 16, wherein, The weight percentage of carbon in the upper ring is 1% to 5%.

19. The substrate processing apparatus according to claim 11, wherein, The outer ring and the upper ring are made of quartz mixed with carbon.

20. The substrate processing apparatus according to claim 11, wherein, The plasma distribution in the edge region of the processing space changes according to the conductivity of the outer ring.

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