Cooling plate, system including cooling plate, and method for controlling moisture in system

Abstract

A substrate processing system is provided for efficient moisture control during manufacturing operations. The system includes a buffer chamber having a cooling plate coupled to a cryopump to circulate a cryogen, such as liquid nitrogen. Residual moisture and water vapor released during substrate transfer are captured and condensed onto a cooling plate. The regeneration system uses a sensor to monitor moisture accumulation and initiates regeneration when a set threshold is reached.

Description

Cooling plate, system including cooling plate and method for controlling moisture in system Technical Field

[0001] This disclosure generally relates to the manufacture of integrated circuit (IC) devices. Specifically, the present invention relates to a suction mechanism using a cooling plate as a means of removing residual moisture and water vapor. Background Technology

[0002] Traditional substrate handling systems encounter challenges related to residual moisture and water vapor during substrate transfer operations. As the substrate moves from the device front-end module (EFEM) into buffer chambers (such as the load-locked module (LLM) and the through chamber (PTC)), moisture and vapor originating from the substrate can escape into these chambers. This escaped moisture and vapor is typically trapped within the chamber. The presence of residual moisture and water vapor in the buffer chamber presents several problems. For example, these molecules are difficult to remove using standard vacuum pumping techniques because they tend to adhere to the chamber surfaces and substrate supports.

[0003] Existing methods for moisture removal are often complex, inefficient, or inadequate to address these issues. Therefore, there is a need for an improved, simplified, and efficient mechanism to capture and remove residual moisture and water vapor from the buffer chamber during substrate transfer operations.

[0004] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure merely for the purpose of providing background to this disclosure and should not be construed as an admission that any or all of the discussions were known at the time the invention was made or otherwise constituted prior art. Summary of the Invention

[0005] According to some embodiments, a substrate processing system may include a wafer transport chamber (WHC), a WHC robot disposed within the WHC, and a buffer chamber coupled to the WHC. The buffer chamber may include a cooling plate and a substrate support coupled to the cooling plate. The cooling plate may be configured to capture residual moisture from a substrate resting on the substrate support. The substrate processing system may further include a cryogenic pump configured to allow refrigerant to flow through the cooling plate, at least one processing module coupled to the WHC, and a regeneration system. The WHC robot may be configured to transfer the substrate between the buffer chamber and the at least one processing module. The regeneration system may be configured to remove moisture accumulated on the cooling plate.

[0006] In some embodiments, the buffer chamber may be a load locking module.

[0007] In some embodiments, the buffer chamber may be a first buffer chamber, and the WHC may be a first wafer transport chamber. The substrate processing system may further include a second buffer chamber coupled to the first wafer transport chamber and a second WHC coupled to the second buffer chamber.

[0008] In some embodiments, the regeneration system may include a regeneration sensor coupled to a cooling plate. The regeneration sensor may be configured to monitor regeneration parameters. The regeneration system may also include a heating mechanism coupled to a buffer chamber. When the regeneration parameters meet or exceed a predetermined threshold, the heating mechanism may be configured to increase the temperature of the cooling plate to desorb moisture accumulated on the cooling plate. Additionally, the regeneration system may include a pump configured to pump the desorbed moisture out of the buffer chamber.

[0009] In some embodiments, the heating mechanism may be an infrared lamp.

[0010] In some embodiments, the heating mechanism may be an internal heater embedded within a cooling plate.

[0011] In some embodiments, the heating mechanism may include purge gas, which is introduced into the buffer chamber to increase the temperature inside the buffer chamber.

[0012] In some embodiments, the purging gas may be at least one of nitrogen, argon, or helium.

[0013] In some embodiments, the regeneration sensor may include a residual gas analyzer (RGA) operatively coupled to the cooling plate, the regeneration parameters may include the amount of moisture accumulated on the cooling plate, and a heating mechanism may be activated to increase the temperature of the cooling plate when the RGA detects that the amount of moisture accumulated on the cooling plate meets or exceeds a predetermined moisture threshold.

[0014] In some embodiments, the regeneration sensor may be configured to monitor the amount of time elapsed since the completion of a previous regeneration cycle, and the regeneration parameters may include the amount of time elapsed, and when the amount of time elapsed meets or exceeds a predetermined time threshold, a heating mechanism may be activated to increase the temperature of the cooling plate.

[0015] In some embodiments, the temperature of the refrigerant may be less than 130 Kelvin.

[0016] According to some embodiments, a method for controlling moisture in a substrate processing system may include providing a substrate processing system including a buffer chamber, the buffer chamber including a cooling plate coupled to a cryogenic pump, using the cryogenic pump to allow refrigerant to flow through the cooling plate to capture residual moisture from a substrate received in the buffer chamber, determining whether one or more regeneration parameters meet or exceed a predetermined threshold, and initiating a regeneration process when one or more regeneration parameters meet or exceed the predetermined threshold.

[0017] In some embodiments, the refrigerant may include liquid nitrogen.

[0018] In some embodiments, initiating the regeneration process may include isolating the buffer chamber from other chambers of the substrate processing system, suspending the flow of refrigerant through the cooling plate, increasing the temperature inside the buffer chamber to a predetermined regeneration temperature to desorb residual moisture accumulated on the cooling plate, and pumping the desorbed residual moisture out of the buffer chamber.

[0019] In some embodiments, increasing the temperature inside the buffer chamber to a predetermined regeneration temperature can be achieved using at least one of the following: an external heater operating outside the buffer chamber; and an internal heater embedded within a cooling plate.

[0020] In some embodiments, increasing the temperature inside the buffer chamber to a predetermined regeneration temperature may include introducing purge gas into the buffer chamber.

[0021] In some embodiments, determining whether one or more regeneration parameters meet or exceed a predetermined threshold may include monitoring the amount of water accumulated on the cooling plate and initiating the regeneration process when the amount of water accumulated exceeds a predetermined amount.

[0022] In some embodiments, monitoring the amount of moisture accumulated on the cooling plate includes using a residual gas analyzer.

[0023] According to some embodiments, a regeneration system may include a cooling plate configured to accumulate residual moisture from a substrate, a regeneration pump coupled to the cooling plate, a heating mechanism coupled to the cooling plate and configured to increase the temperature of the cooling plate, and a residual gas analyzer (RGA) operably coupled to the cooling plate and configured to monitor residual moisture accumulated on the cooling plate. When the RGA detects that the monitored residual moisture exceeds a predetermined threshold, the heating mechanism can be activated to increase the temperature of the cooling plate.

[0024] In some embodiments, the regeneration pump may be a turbomolecular pump (TMP).

[0025] A semiconductor processing system is provided. The processing system includes at least one wafer transport chamber (WHC), a WHC robot included within the at least one WHC, and a buffer chamber coupled to the WHC. The buffer chamber also includes a cooling plate and at least one substrate support coupled to the cooling plate, such that the cooling plate is configured to pump moisture residue from a substrate resting on the substrate support. The cooling plate is coupled to a cryogenic pump configured to allow coolant to flow through the cooling plate. At least one processing module is coupled to the WHC, and the WHC robot is configured to transfer a substrate between the buffer chamber and the at least one processing module. The processing system also includes a regeneration system configured to remove moisture accumulated on the cooling plate.

[0026] A method for moisture control during a substrate transfer process in a semiconductor processing system is provided. The method includes coupling a cryogenic pump to a cooling plate included in a buffer chamber within the semiconductor processing system. The method also includes circulating a refrigerant through the cooling plate to capture residual moisture from a substrate received in the buffer chamber. The method further includes determining whether one or more regeneration parameters meet or exceed predetermined thresholds. When one or more regeneration parameters meet or exceed the predetermined thresholds, a regeneration process is initiated.

[0027] A regeneration system is provided. The regeneration system includes a cooling plate that accumulates residual moisture generated during substrate transfer from one chamber to another in a semiconductor processing system. The system also includes a regeneration pump coupled to the cooling plate. The system further includes at least one heating mechanism coupled to the cooling plate to increase its temperature. The regeneration system also includes a residual gas analyzer coupled to the cooling plate. The RGA is configured to monitor residual moisture accumulated on the cooling plate. When the monitored pressure exceeds a predetermined threshold, the heating mechanism is activated to increase the temperature of the cooling plate.

[0028] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0029] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the accompanying drawings of certain exemplary embodiments, which are intended to illustrate rather than limit the invention.

[0030] Figure 1 shows a top view of a substrate processing system according to some embodiments of the present invention.

[0031] Figure 2 shows a cross-sectional view of the substrate processing system shown in Figure 1 according to some embodiments of the present invention.

[0032] Figure 3 is a flowchart of a method for moisture control during substrate transfer in the substrate processing system shown in Figure 1, according to some embodiments of the present invention.

[0033] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0034] Reference will now be made to the accompanying drawings, wherein the same reference numerals throughout this disclosure identify similar structural features or aspects. The systems and methods discussed herein can be used in substrate processing systems for fabricating integrated circuit (IC) devices, such as those used to deposit material layers during the fabrication of IC devices (e.g., logic and / or memory devices) using chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) techniques; however, this disclosure is not limited to any substrate processing operation or the fabrication of any particular device. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0035] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes. Wafer diameters can be 200 mm, 300 mm, or even 450 mm. A substrate can be formed from one or more semiconductor materials, including, as non-limiting examples, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and / or silicon carbide.

[0036] Figure 1 shows a top view of a substrate processing system 100 (also referred to as a processing system). The substrate processing system 100 can be configured to receive front-opening wafer transfer cassettes (FOUPs) (e.g., 162-1, 162-2, 162-3, or 162-4), which serve as carriers for the substrate during transfer. In an example embodiment, FOUP 162 may include at least four cassettes 162-1, 162-2, 162-3, and 162-4. The processing system 100 may also include a device front-end module (EFEM) 160, a load locking module (LLM) 140, and at least a first wafer transport chamber (WHC) 130. The substrate contained within the FOUP (e.g., 162-1, 162-2, 162-3, or 162-4) can be accessed by the substrate processing system 100. EFEM160 may include a front-end robot 164 configured to obtain substrates from FOUPs (e.g., 162-1, 162-2, 162-3, or 162-4) and deliver these substrates to LLM140. As shown in FIG1, in an example embodiment, the front-end robot 164 may extend through one or more gate valves 144 to place substrates into LLM140.

[0037] The processing system 100 may also include one or more processing modules (e.g., 170-1 or 170-2) that can be coupled to the first WHC 130. The first WHC 130 may also include at least one robot (e.g., 132-1 or 132-2). In an example embodiment, the first WHC 130 may include multiple robots (e.g., robots 132-1 and 132-2). In another embodiment, robots 132-1 and 132-2 may be single-arm or dual-arm robots. Robots 132-1 and 132-2 may be configured to collect substrates from the LLM 140 and deliver these substrates to the first WHC 130 via gate valve 142. In an example embodiment, the substrates can then be delivered (via robots 132-1 and / or 132-2) to processing modules 170-1 and 170-2 for processing (e.g., deposition) by extending robots 132-1 and / or 132-2 through gate valve 172.

[0038] In an example embodiment, the processing system 100 may further include a through chamber (PTC) 180 and a second WHC 120. The processing system 100 may also include processing modules 150-1, 150-2, 150-3, and 150-4 coupled to the second WHC 120 for processing (e.g., deposition). The individual chambers of the PTC 180 (e.g., 180-1, 180-2, 180-3, and 180-4) may function similarly to the chambers of the LLM 140 (e.g., 140-1, 140-2, 140-3, or 140-4). In such an example embodiment, some substrates may be fed from the first WHC 130 to the through chamber (PTC) 180 via a gate valve 184. Furthermore, the second WHC 120 may include at least one robot (e.g., 122-1 or 122-2). In an example embodiment, the second WHC 120 may include multiple robots (e.g., robots 122-1 and 122-2). In an example embodiment, robots 122-1 and 122-2 may be single-armed or dual-armed robots. Similar to robots 132-1 and 132-2, robots 122-1 and 122-2 may be configured to collect substrates from PTC180 and transport these substrates to a second WHC120 via gate valve 182. In an example embodiment, the substrates may then be transported (via robots 122-1 and 122-2) via gate valve 152 to processing modules (e.g., 150-1, 150-2, 150-3, and 150-4) for processing (e.g., deposition).

[0039] Referring to Figure 1, the first WHC 130 can be connected to two processing modules 170-1 and 170-2. However, in some example embodiments, the first WHC 130 may have the capability to support more than two processing modules (e.g., four processing modules). In an example embodiment, the second WHC 120 can be connected to four processing modules 150-1, 150-2, 150-3, and 150-4. Therefore, in example embodiments (such as the embodiment shown in Figure 1), the processing system 100 may include six processing modules (170-1, 170-2, 150-1, 150-2, 150-3, and 150-4).

[0040] After processing, the substrate can be transported back to FOUP162 (e.g., 162-1, 162-2, 162-3, and / or 162-4). That is, the substrates processed in processing modules 150-1, 150-2, 150-3, and / or 150-4 can be collected by robots 122-1 and 122-2 in the second WHC120 and placed in a chamber of PTC180 (e.g., 180-1, 180-2, 180-3, or 180-4). The substrate can then be picked up from PTC180 by robots 132-1 and 132-2 in the first WHC130 and placed in one of the chambers of LLM140 (e.g., 140-1, 140-2, 140-3, or 140-4). Finally, the substrates can be collected by front-end robot 164 and transferred back to FOUP 162 (e.g., 162-1, 162-2, 162-3, or 162-4). Similarly, after processing, substrates processed in processing modules (e.g., 170-1 and / or 170-2) can be collected by robots 132-1 and 132-2 in the first WHC 130 and placed in one of the chambers of LLM 140 (e.g., 140-1, 140-2, 140-3, or 140-4). These substrates can then be collected by front-end robot 164 and transferred back to FOUP 162 (e.g., 162-1, 162-2, 162-3, or 162-4).

[0041] Referring now to FIG. 2, a cross-sectional view of the processing system 100 is shown. As shown in FIG. 2, the LLM 140 may include an upper chamber 140-2 and a lower chamber 140-1. Similarly, the PTC 180 may include an upper chamber 180-1 and a lower chamber 180-2. Furthermore, in an example embodiment, the LLM 140 may be divided into two parts, each part including an upper chamber and a lower chamber (see 140-1, 140-2, 140-3, and 140-4 in FIG. 1). Similarly, in an example embodiment, the PTC 180 may be divided into two parts, each part including an upper chamber and a lower chamber (see 180-1, 180-2, 180-3, and 180-4 in FIG. 1). Since FIG. 2 shows a cross-sectional view, one can see only one upper chamber 140-2 and one lower chamber 140-1 of the LLM 140 and only one upper chamber 180-2 and one lower chamber 180-1 of the PTC 180. However, the second upper chamber (e.g., 140-4) and the second lower chamber (e.g., 140-3) of the LLM140 can be designed and can function in a manner similar to that of the upper chamber 140-2 and the lower chamber 140-1. Similarly, the second upper chamber (e.g., 180-4) and the second lower chamber (e.g., 180-3) of the PTC180 can be designed and can function in a manner similar to that of the upper chamber 180-2 and the lower chamber 180-1.

[0042] As further shown in Figure 2, each chamber in LLM140 and PTC180 includes one or more substrate supports 252 (also referred to as wafer supports). The substrate supports 252 are configured to receive an incoming substrate within the respective chamber. Therefore, when one or more substrates are received in LLM140 from EFEM160 or the first WHC130, the substrate can be placed on one of the substrate supports 252. In an example embodiment, each chamber of LLM140 may include multiple substrate supports 252. Similarly, when one or more substrates are received in PTC180 from the first WHC130 or the second WHC120, the substrate can be placed on one of the substrate supports 254. In an example embodiment, each chamber of PTC180 may include multiple substrate supports 254.

[0043] Furthermore, LLM140 may include a lower cooling plate 242-1 in a lower chamber 140-1 and an upper cooling plate 242-2 in an upper chamber 140-2. The lower cooling plate 242-1 may be coupled to a substrate support 252 disposed in the lower chamber 140-1, and the upper cooling plate 242-2 may be coupled to a substrate support 252 disposed in the upper chamber 140-2. Each of the lower cooling plate 242-1 and the upper cooling plate 242-2 may be configured to capture residual moisture from the substrate disposed on the substrate support 252 thereon and / or capture residual moisture in a chamber (e.g., lower chamber 140-1 or upper chamber 140-2) generated by substrate transfer thereon. Similarly, PTC180 may include a lower cooling plate 282-1 in a lower chamber 180-1 and an upper cooling plate 282-2 in an upper chamber 180-2. Cooling plates (e.g., 242-1, 242-2, 282-1, and 282-2) can be configured to cool the processed substrate exiting the processing module. Lower cooling plate 282-1 can be coupled to substrate support 254 disposed in lower chamber 180-1, and upper cooling plate 282-2 can be coupled to substrate support 254 disposed in upper chamber 180-2. Each of the lower cooling plate 282-1 and upper cooling plate 282-2 can be configured to capture residual moisture from the substrate disposed on the substrate support 254 thereon and / or capture residual moisture in the chamber (e.g., lower chamber 180-1 or upper chamber 180-2) generated by substrate transfer thereon.

[0044] As shown in Figure 2, cooling plates 242-1 and 242-2, as well as cooling plates 282-1 and 282-2, are further connected to a cryogenic pump 234. Therefore, a cryogenic material (also referred to as a refrigerant, such as liquid nitrogen) is pumped into the LLM 140 and / or PTC 180 to significantly reduce the temperature within the LLM 140 and / or PTC 180, thereby cooling the substrate. As indicated by arrows 236-1 and 236-2, the cryogenic material can be circulated through the LLM 140 and / or PTC 180 to lower the temperature inside the respective chamber. In some embodiments, the cryogenic material can be circulated through cooling plates (e.g., 242-1, 242-2, 282-1, and 282-2). In an example embodiment, the cryogenic pump 234 may be external to the processing system 100. In an example embodiment, the temperature of the cryogenic material (also referred to as the cryogenic temperature) may be less than zero degrees Celsius. In an example embodiment, the temperature of the cryogenic material may be less than 130 Kelvin. In an example embodiment, cooling the substrate to a cryogenic temperature causes the partial pressure of moisture (i.e., H2O) to condense to below 1e-7 Torr. In the context of this invention, "cryomaterial" or "cryogenic agent" refers to any material used to achieve or maintain cryogenic temperatures, and may include, but is not limited to, liquid nitrogen, liquid helium, or other cryogenic substances suitable for the intended application.

[0045] Therefore, any residual moisture generated by substrate transfer (e.g., from EFEM to the first WHC130 via LLM140 or via PTC180 to the first WHC130) can be captured by the cooling plates (i.e., plates 242-1, 242-2, 282-1, and / or 282-2) and can accumulate on those cooling plates. However, cooling plates 242-1, 242-2, 282-1, and 282-2 can eventually become saturated and require regeneration to desorb the residual moisture accumulated on the cooling plates. In the example embodiment, a regeneration process can be initiated when the regeneration requirements are met.

[0046] In an example embodiment, the substrate processing system 100 may further include saturation sensors 214-1 and 214-2 (also referred to as regeneration sensors) coupled to cooling plates 242-1, 242-2 and 282-1, 282-2. In an example embodiment, saturation sensors 214-1 and 214-2 can measure the amount of water accumulated on cooling plates 242-1, 242-2, 282-1, and 282-2. When the amount of accumulated water measured by the saturation sensors is determined to exceed a predetermined saturation threshold, a regeneration process can be initiated. In an example embodiment, saturation sensors 214-1 and 214-2 may include a differential pumped residual gas analyzer (RGA). This RGA can be used to monitor the partial pressure of H2O on cooling plates 242-1, 242-2, 282-1, and 282-2. The RGA results indicate the moisture content on cooling plates 242-1, 242-2, 282-1, and 282-2, and can then be used to determine the regeneration frequency by comparing them with a predetermined saturation threshold. In an example embodiment, saturation sensors 214-1 and 214-2 may be included in sampling chambers 212-1 and / or 212-2. In an example embodiment, sampling chambers 2120-1 and 212-2 may include different spectrum analyzers.

[0047] In an example embodiment, the regeneration process can be initiated based on the amount of time elapsed between regeneration cycles. That is, the regeneration process is initiated when the amount of time elapsed after the regeneration process is completed meets or exceeds (e.g., meets) a predetermined regeneration time threshold.

[0048] When it is determined that cooling plates 242-1 and / or 242-2 are saturated, the regeneration process can be initiated. Gate valves 142 and 144 can be moved to the closed position to isolate LLM140 (and therefore cooling plates 242-1 and / or 242-2) from the first WHC130 and EFEM160. Similarly, when it is determined that cooling plates 281-1 and / or 282-2 are saturated, regeneration can be initiated for PTC180. Gate valves 182 and 184 can be moved to the closed position to isolate PTC180 (and therefore cooling plates 282-1 and 282-2) from the first WHC130 and the second WHC120. Cryogenic pump 234 can be shut off to suspend the recirculation of cryogenic material in the respective chambers.

[0049] Furthermore, the temperature of the cooling plates can be increased to sublimate the adsorbed moisture. In an example embodiment, the regeneration temperature can be room temperature. In an example embodiment, the temperature can be increased by operating a heating mechanism 232. In an example embodiment, the heating mechanism 232 (e.g., a heater) can be embedded in cooling plates 242-1, 242-2, 282-1, and / or 282-2. In an example embodiment, the heating mechanism 232 can be an external heater (e.g., an infrared lamp) for providing heat to cooling plates 242-1, 242-2, 282-1, and / or 282-2. This external heater can be coupled to the respective chamber (i.e., LLM140 or PTC180). In an example embodiment, the temperature in the respective chamber can be increased by means of a purge gas (e.g., hot nitrogen (N2) or argon (Ar) or helium). In such an example, the temperature of the cooling plates can be increased, and the buffer chamber can be brought to atmospheric pressure (atm) to promote the desorption of residual moisture accumulated on the cooling plates.

[0050] The desorbed water can then be pumped out of the chambers of LLM140 and PTC180 (and therefore, cooling plates 242-1, 242-2 and 282-1, 282-2). In an example embodiment, the desorbed water can be pumped out from the cooling plates of the respective chambers via regeneration pumps 218-1 and / or 218-2. Regeneration pump 218-1 can be coupled to a chamber of LLM140, and regeneration pump 218-2 can be coupled to PTC180. In some example embodiments, regeneration pumps 218-1 and / or 218-2 can be turbomolecular pumps (TMPs), which can operate at very low pressures for rapid and efficient pumping. In an example embodiment, after the desorbed water has been pumped out, the cooling plates 242-1, 242-2 and 282-1, 282-2 in the chambers of LLM140 and PTC180 can be cleaned for reuse. A regeneration system refers to a system that includes components involved in the regeneration process (such as saturation sensors 214-1 and 214-2 and regeneration pumps 218-1 and 218-2).

[0051] Referring to Figure 3, a method 300 for controlling moisture during substrate transfer is provided. Method 300 may include providing a substrate processing system including a buffer chamber comprising a cooling plate (box 302) coupled to a cryogenic pump. The cryogenic pump may be coupled to the cooling plate prior to performing subsequent operations. Method 300 may also include circulating a cryogenic material through the cooling plate to capture residual moisture from the substrate in the buffer chamber (box 304). In an example embodiment, the cryogenic material may be liquid nitrogen.

[0052] Furthermore, method 300 may include determining whether one or more regeneration parameters meet or exceed a predetermined threshold (block 306). In an example embodiment, the regeneration parameters may include the amount of moisture accumulated on the cooling plate. Therefore, an example embodiment of method 300 may also include monitoring the amount of moisture accumulated on the cooling plate. Method 300 may further include initiating a regeneration process when one or more regeneration parameters (e.g., the amount of moisture accumulated on the cooling plate) meet or exceed a predetermined threshold (e.g., a predetermined amount of moisture) (block 308). In an example embodiment, a residual gas analyzer may be coupled to the cooling plate to monitor the pressure caused by the accumulation of moisture on the cooling plate. When the pressure exceeds the predetermined threshold, the regeneration process may be initiated.

[0053] In an example embodiment, the regeneration parameter may include time. Therefore, method 300 may also include monitoring the time elapsed between regeneration cycles. Thus, by monitoring the time elapsed since the previous regeneration process, a regeneration process can be initiated when the time consistently meets or exceeds (e.g., meets) a predetermined regeneration time threshold.

[0054] The regeneration process can be initiated when one or more regeneration parameters meet or exceed a predetermined threshold. In an example embodiment, method 300 may further include isolating the buffer chamber from other chambers of the substrate processing system, suspending the flow of cryogenic material through the cooling plate, increasing the temperature inside the buffer chamber to a predetermined regeneration temperature to desorb residual moisture accumulated on the cooling plate, and pumping the dissolved residual moisture out of the buffer chamber.

[0055] In an example embodiment of method 300, increasing the temperature inside the buffer chamber to a predetermined regeneration temperature may further include utilizing a heating mechanism. In an example embodiment, the heating mechanism may include an external heater (e.g., an infrared (IR) lamp) operating outside the buffer chamber. In an example embodiment, the heating mechanism may include an internal heater that can be embedded within a cooling plate. In an example embodiment, the heating mechanism may include introducing purge gas into the buffer chamber to help increase the temperature inside the buffer chamber.

[0056] The steps shown in Figure 3 can be performed in various orders and are not limited to the specific order depicted. In some embodiments, certain steps may be omitted, combined, or repeated, and the execution order may be modified based on process requirements. The flowchart is intended to provide examples of possible process flows and should not be construed as limiting the scope of the invention to any particular sequence of steps.

[0057] Although this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of embodiments, as well as their obvious modifications and equivalents. Furthermore, while several variations of embodiments of this disclosure have been shown and described in detail, other modifications based on this disclosure and within its scope will be apparent to those skilled in the art. Various combinations or sub-combinations of specific features and aspects of the embodiments are also contemplated and will still fall within the scope of this disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form variations of embodiments of this disclosure. Therefore, it is intended that the scope of this disclosure should not be limited to the specific embodiments described above.

[0058] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A substrate processing system, comprising: Wafer Handling Room (WHC); The WHC robot is located inside the WHC. A buffer chamber, connected to the WHC, includes: a cooling plate; and a substrate support, connected to the cooling plate, wherein the cooling plate is configured to capture residual moisture from a substrate resting on the substrate support; a cryogenic pump, configured to circulate refrigerant through the cooling plate; at least one processing module, connected to the WHC, wherein a WHC robot is configured to transfer a substrate between the buffer chamber and the at least one processing module; and a regeneration system, wherein the regeneration system is configured to remove moisture accumulated on the cooling plate.

2. The substrate processing system according to claim 1, wherein, The buffer chamber is a load locking module.

3. The substrate processing system according to claim 2, wherein, The buffer chamber is a first buffer chamber, and the WHC is a first wafer transport chamber, wherein the substrate processing system further includes: a second buffer chamber connected to the first wafer transport chamber; and a second WHC connected to the second buffer chamber.

4. The substrate processing system according to claim 1, wherein, The regeneration system includes: a regeneration sensor connected to the cooling plate, wherein the regeneration sensor is configured to monitor regeneration parameters; a heating mechanism connected to the buffer chamber, wherein when the regeneration parameters meet or exceed a predetermined threshold, the heating mechanism is configured to increase the temperature of the cooling plate to desorb moisture accumulated on the cooling plate; and a pump configured to pump the desorbed moisture out of the buffer chamber.

5. The substrate processing system according to claim 4, wherein, The heating mechanism is an infrared lamp.

6. The substrate processing system according to claim 4, wherein, The heating mechanism is an internal heater embedded in the cooling plate.

7. The substrate processing system according to claim 4, wherein, The heating mechanism includes a purge gas that is introduced into the buffer chamber to increase the temperature inside the buffer chamber.

8. The substrate processing system according to claim 7, wherein, The purging gas is at least one of nitrogen, argon, or helium.

9. The substrate processing system according to claim 4, wherein, The regeneration sensor includes a residual gas analyzer (RGA) operatively coupled to the cooling plate, wherein the regeneration parameters include the amount of moisture accumulated on the cooling plate, and wherein the heating mechanism is activated to increase the temperature of the cooling plate when the RGA detects that the amount of moisture accumulated on the cooling plate meets or exceeds a predetermined moisture threshold.

10. The substrate processing system according to claim 4, wherein, The regeneration sensor is configured to monitor the amount of time elapsed since the completion of a previous regeneration cycle, and the regeneration parameters include the amount of time elapsed, wherein the heating mechanism is activated to increase the temperature of the cooling plate when the amount of time elapsed reaches or exceeds a predetermined time threshold.

11. The substrate processing system according to claim 1, wherein, The temperature of the refrigerant is below 130 Kelvin.

12. A method for controlling moisture in a substrate processing system, the method comprising: A substrate processing system is provided, including a buffer chamber comprising a cooling plate connected to a cryogenic pump; A cryogenic pump is used to circulate refrigerant through a cooling plate to capture residual moisture from the substrate received in the buffer chamber; one or more regeneration parameters are determined to meet or exceed a predetermined threshold. And when one or more regeneration parameters meet or exceed a predetermined threshold, the regeneration process is initiated.

13. The method according to claim 12, wherein, The refrigerant includes liquid nitrogen.

14. The method according to claim 12, wherein, Initiating the regeneration process includes: isolating the buffer chamber from other chambers of the substrate processing system; suspending the flow of the refrigerant through the cooling plate; increasing the temperature inside the buffer chamber to a predetermined regeneration temperature to desorb residual moisture accumulated on the cooling plate; and pumping the desorbed residual moisture out of the buffer chamber.

15. The method according to claim 14, wherein, The temperature inside the buffer chamber is increased to the predetermined regeneration temperature using at least one of the following: an external heater that operates outside the buffer chamber; and an internal heater that is embedded within the cooling plate.

16. The method of claim 14, wherein, Increasing the temperature inside the buffer chamber to the predetermined regeneration temperature includes introducing purge gas into the buffer chamber.

17. The method according to claim 12, wherein, Determining whether the one or more regeneration parameters meet or exceed the predetermined threshold includes: monitoring the amount of water accumulated on the cooling plate; and initiating the regeneration process when the amount of water accumulated exceeds the predetermined amount.

18. The method according to claim 17, wherein, Monitoring the amount of moisture accumulated on the cooling plate includes using a residual gas analyzer.

19. A regeneration system, comprising: Cooling plate, configured to collect residual moisture from the substrate; A regeneration pump, which is connected to a cooling plate; A heating mechanism is connected to a cooling plate and configured to increase the temperature of the cooling plate; and a residual gas analyzer (RGA) is operatively connected to the cooling plate and configured to monitor residual moisture accumulated on the cooling plate, wherein the heating mechanism is activated to increase the temperature of the cooling plate when the RGA detects that the monitored residual moisture is greater than a predetermined threshold.

20. The regeneration system according to claim 19, wherein, The regeneration pump is a turbomolecular pump (TMP).

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