Method of manufacturing display device

Abstract

A method of manufacturing a display device, the method including: forming a conductive layer on a substrate; forming a preliminary insulation pattern on the conductive layer; forming a first insulating pattern by developing with a first solution; and treating the first insulating pattern with a second solution, in which the first solution includes a nitrogen compound and the second solution includes a buffer oxide etchant (BOE).

Description

[0001] This application is a divisional application of the invention patent application filed on November 5, 2020, with application number 202011224951.9 and title "Display Device and Method of Manufacturing the Display Device". Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2019-0143933, filed on November 12, 2019, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of this disclosure relate to display devices and methods of manufacturing display devices, and to display devices and methods of manufacturing display devices capable of preventing or reducing image quality degradation during manufacturing processes or use. Background Technology

[0004] Display devices have diversified in their applications. Recent developments have resulted in thinner and lighter displays, leading to their wider range of use. For example, their use has expanded not only to small devices such as MP3 players and mobile phones, but also to medium and large devices such as large-screen televisions.

[0005] In addition, research and development on foldable or rollable display devices already exist. Therefore, there is a desire to improve the flexibility of the substrate for display devices. Summary of the Invention

[0006] Embodiments of this disclosure provide a display device and a method for manufacturing the display device that can prevent or reduce image quality degradation during manufacturing or use.

[0007] The technical objectives to be achieved by this disclosure are not limited to the embodiments described above, and those skilled in the art will clearly understand from the description of this disclosure other technical objectives not described herein.

[0008] Other aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the embodiments proposed in this disclosure.

[0009] In one embodiment, the display device may include: a substrate; a conductive layer disposed on the substrate; and a first insulating pattern disposed on the conductive layer, wherein the first insulating pattern comprises a fluorine compound.

[0010] In one embodiment, the concentration of the fluorine compound may decrease from the first surface of the first insulating pattern to the second surface of the first insulating pattern, and the first surface faces the second surface.

[0011] In one embodiment, the second surface of the first insulating pattern is in contact with the conductive layer.

[0012] In one embodiment, the first insulating pattern may further comprise a nitrogen compound.

[0013] In one embodiment, the nitrogen compound may be represented by Formula 1.

[0014] <Formula 1> NR1R2R3OH In Equation 1, R1 to R3 can each be independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C6-C 30 aryl groups, and substituted or unsubstituted C7-C groups 30 Aryl alkyl group.

[0015] In one embodiment, the concentration of the nitrogen compound may decrease from a first surface of the first insulating pattern to a second surface of the first insulating pattern, wherein the first surface faces the second surface.

[0016] In one embodiment, the first insulating pattern may further include a nitrogen compound and a first material, and the first material may be different from the fluorine compound and the nitrogen compound.

[0017] In one embodiment, the first insulating pattern is primarily composed of the first material.

[0018] In one embodiment, the first material may be an alkali-soluble polymer.

[0019] In one embodiment, the first material may be a siloxane polymer.

[0020] In one embodiment, the first insulating pattern includes a first region and a second region, the second region being located between the conductive layer and the first region, and the amount of the first material in the first region being greater than the amount of the first material in the second region.

[0021] In one embodiment, the ratio of the amount of the fluorine compound in the first region to the amount of the fluorine compound in the second region may be from about 10:1 to about 10,000:1.

[0022] In one embodiment, the ratio of the thickness of the first region to the thickness of the second region can be from about 1:10 to about 1:1000.

[0023] In one embodiment, the conductive layer may comprise molybdenum, aluminum, titanium, neodymium, copper, or a combination thereof.

[0024] In one embodiment, the display device may further include: pixel electrodes disposed on the first insulating pattern and electrically connected to the conductive layer.

[0025] In one embodiment, the first insulating pattern may include an opening that exposes a portion of the conductive layer, and the pixel electrode may make electrical contact with the conductive layer through the opening.

[0026] In one embodiment, the portion of the conductive layer exposed by the opening may contain molybdenum.

[0027] In one embodiment, the display device may further include: a second insulating pattern disposed on the pixel electrode and electrically contacting the first insulating pattern outside the pixel electrode.

[0028] In one embodiment, the first insulating pattern may include a first material, the second insulating pattern may include a second material, and the first material and the second material may include the same material.

[0029] In one embodiment, a method of manufacturing a display device includes: forming a conductive layer on a substrate; forming a preliminary first insulating pattern on the conductive layer; forming the first insulating pattern by developing with a first solution; and treating the first insulating pattern with a second solution, wherein the first solution comprises a nitrogen compound and the second solution comprises HF.

[0030] In one embodiment, the method may further include: forming a pixel electrode on the first insulating pattern prior to the processing, wherein the pixel electrode may be electrically connected to the conductive layer.

[0031] In one embodiment, the method may further include: after the processing, forming a pixel electrode on the first insulating pattern, wherein the pixel electrode is electrically connected to the conductive layer. Attached Figure Description

[0032] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which: Figure 1 This is a schematic perspective view illustrating a display device according to an embodiment; Figure 2This is a schematic cross-sectional view illustrating a display device according to an embodiment; Figures 3 to 5 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to an embodiment; Figure 6 This is a schematic block diagram illustrating the structure of an electronic device according to an embodiment; and Figure 7A and Figure 7B This is a schematic perspective view illustrating an electronic device according to an embodiment. Detailed Implementation

[0033] Reference will now be made in detail to embodiments illustrated in the accompanying drawings, wherein the same reference numerals consistently indicate the same elements. In this respect, embodiments may have various modifications and different forms and should not be construed as being limited to the description set forth herein. Rather, all modifications, equivalents, and substitutions included within the spirit and technical scope of the invention are to be encompassed. Therefore, embodiments are described below only with reference to the accompanying drawings to explain various aspects of this specification.

[0034] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Identical or corresponding components will be indicated by the same reference numerals, and therefore redundant descriptions will be omitted.

[0035] As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, or c” may indicate only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0036] It will be understood that while the terms “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms. These terms are used only to distinguish one component from another.

[0037] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are also intended to include the plural forms.

[0038] It will also be understood that the terms “contains,” “containing,” “includes,” “including,” “comprises,” and / or “comprising” as used herein indicate the presence of the stated feature or component, but do not preclude the presence or addition of one or more other features or components.

[0039] It will be understood that when a layer, region, or component is referred to as being "on" or "above" another layer, region, or component, the layer, region, or component may be formed directly or indirectly on the other layer, region, or component. For example, intermediate layers, intermediate regions, or intermediate components may exist. It will also be understood that when a layer, region, or component is referred to as being "directly" on or "directly" on another layer, region, or component, the layer, region, or component may be formed directly on the other layer, region, or component, and intermediate layers, intermediate regions, or intermediate components may not exist.

[0040] For ease of illustration, the dimensions of the elements in the accompanying drawings may be enlarged. In other words, since the dimensions and thicknesses of the components in the drawings are arbitrarily shown for ease of explanation, the following embodiments of this disclosure are not limited thereto.

[0041] When embodiments can be implemented differently, a particular process sequence may be performed differently than the sequence described. For example, two processes described consecutively may be performed substantially simultaneously or in reverse order.

[0042] It will be understood that when a layer, region, or component is referred to as being "connected to" another layer, region, or component, the layer, region, or component may be directly connected to the other layer, region, or component, or may be indirectly connected to the other layer, region, or component due to the presence of an intermediate layer, intermediate region, or intermediate component. For example, it will be understood that when a layer, region, or component is referred to as being "electrically connected to" another layer, region, or component, the layer, region, or component may be directly electrically connected to the other layer, region, or component, or may be indirectly electrically connected to the other layer, region, or component due to the presence of an intermediate layer, intermediate region, or intermediate component.

[0043] The term "C1-C" used in this article 20 "Alkyl" refers to a straight-chain or branched aliphatic saturated hydrocarbon monovalent group having 1 to 20 carbon atoms, and examples include methyl, ethyl, propyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, and hexyl.

[0044] The term "C3-C" used in this article 10 "Cycloalkane group" refers to a monocyclic cycloalkanes of monovalent saturated hydrocarbons having 3 to 10 carbon atoms, and examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cycloheptyl.

[0045] The term "C6-C" used in this article 30 "Aryl" refers to a monovalent group that has a carbocyclic aromatic system, which has 6 to 30 carbon atoms. (C6-C) 30Examples of aryl groups include phenyl, naphthyl, anthraceneyl, phenanthryl, pyrene, and trefyl. When C6-C... 30 When an aryl group comprises two or more rings, the rings can fused together.

[0046] The term "C7-C" used in this article 30 "Aryl group" refers to a group having 7 to 30 carbon atoms in which the alkyl group is replaced by an aryl group. (C7-C) 60 Examples of aralkyl groups include benzyl groups.

[0047] Figure 1 This is a schematic perspective view showing a display device 1 according to an embodiment.

[0048] Reference Figure 1 The display device 1 includes a display area DA and a non-display area NDA outside the display area DA. An organic light-emitting device such as an OLED (e.g., an organic light-emitting diode) can be placed or disposed within the display area DA. Figure 2 Various display devices (as shown in the diagram). In the non-display area NDA, the wiring through which electrical signals are transmitted to the display area DA can be placed or arranged.

[0049] although Figure 1 A display device 1 including a rectangular display area DA is shown, but the present invention is not limited thereto. The shape of the display area DA may be circular, elliptical, or a polygon such as a triangle or pentagon.

[0050] although Figure 1 The display device 1 is a display device with a flat shape, but the display device 1 can be implemented in various forms such as a curved display device, a flexible display device, a foldable display device, and a rollable display device.

[0051] In the following description, for convenience, the organic light-emitting display device will be described as an example of display device 1 according to an embodiment, but the display device according to this disclosure is not limited thereto. In one or more embodiments, various other display devices, such as inorganic light-emitting display devices or quantum dot light-emitting display devices, may be used alternatively.

[0052] Figure 2 This is a schematic cross-sectional view showing a display device 1 according to an embodiment.

[0053] Reference Figure 2 According to an embodiment, the display device 1 includes a substrate 100, a first conductive layer 160 disposed on the substrate 100, and a first insulating pattern 170 disposed on the first conductive layer 160.

[0054] The substrate 100 may include various materials such as glass, metal, metal oxide, metal nitride, or plastic. For example, the substrate 100 may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate, etc.

[0055] The substrate 100 may be flexible, rollable, or bendable. The substrate 100 may have a multi-layered structure, and the layers constituting the multi-layered structure may be made of different materials.

[0056] A buffer layer 110 may be disposed on the substrate 100 to planarize the top surface of the substrate 100 and prevent impurities from flowing out of the substrate 100. The buffer layer 110 may have a single-layer structure or a multi-layer structure, both of which include silicon nitride (SiN). x ) and / or silicon dioxide (SiO2) x Inorganic material. Buffer layer 110 can be omitted.

[0057] An active layer 120 may be disposed on the buffer layer 110. The active layer 120 may include organic semiconductors, inorganic semiconductors, and / or silicon semiconductors.

[0058] A first insulating layer 130 may be disposed on the active layer 120, and a gate electrode 140 may be disposed on the first insulating layer 130.

[0059] The first insulating layer 130 may be in the form of a single layer or multiple layers, comprising at least one insulating film, wherein the at least one insulating film is selected from SiO2, SiN x The materials used include SiON, Al2O3, TiO2, Ta2O5, HfO2, ZrO2, BST, and PZT. The first insulating layer 130 can be an inorganic insulating film.

[0060] The gate electrode 140 may be in the form of a single layer or multiple layers and may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or any combination thereof. The gate electrode 140 may be connected to a gate line through which an electrical signal is applied to the gate electrode 140.

[0061] A first conductive layer 160 and / or a second conductive layer 161 may be disposed on the gate electrode 140, with a second insulating layer 150 between them. The first conductive layer 160 and / or the second conductive layer 161 may be electrically connected to the active layer 120 through contact holes formed in the second insulating layer 150 and the first insulating layer 130.

[0062] The first conductive layer 160 may be a single layer or multiple layers comprising aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or any combination thereof. For example, the first conductive layer 160 may have a three-layer Mo / Al / Mo, Mo / Al / Ti, or Ti / Al / Ti structure. In embodiments, the first conductive layer 160 may include a Mo / Al / Ti structure. The composition and structure of the second conductive layer 161 can be understood by referring to the description of the first conductive layer 160.

[0063] A first insulating pattern 170 may be provided on the second insulating layer 150.

[0064] In one embodiment, the first insulating pattern 170 may include a fluorine compound.

[0065] In one embodiment, the concentration of fluorine compound can be reduced from a first surface of the first insulating pattern 170 to a second surface of the first insulating pattern 170, wherein the first surface faces the second surface.

[0066] The first insulating pattern 170 may be formed from a preliminary first insulating pattern, and the preliminary first insulating pattern may be developed using an alkaline aqueous solution containing a nitrogen compound. Residual nitrogen compounds may remain in the first insulating pattern 170, which may reduce the lifespan of the display device. To minimize residual nitrogen compounds, it is treated with a solution containing HF. Due to the use of HF in the treatment, fluorine compounds derived from HF may be included in the first insulating pattern 170. Although the amount of fluorine compounds is not limited, the amount of fluorine compounds included may be substantially zero or relatively small. Although the amount of nitrogen compounds is not limited, the amount of nitrogen compounds included may be substantially zero or relatively small.

[0067] For example, the amount of fluorine compound in the first insulating pattern 170 can be less than about 1 wt%.

[0068] In one or more embodiments, the amount of fluorine compound in the first insulating pattern 170 may be less than or equal to about 0.5 wt%.

[0069] In one embodiment, the first insulating pattern 170 may also include a nitrogen compound.

[0070] For example, the amount of nitrogen compound in the first insulating pattern 170 can be less than about 1 wt%.

[0071] In one or more embodiments, the amount of nitrogen compound in the first insulating pattern 170 may be less than or equal to about 0.5 wt%.

[0072] In one embodiment, the concentration of nitrogen compounds can be reduced from a first surface of the first insulating pattern 170 to a second surface of the first insulating pattern 170, wherein the first surface faces the second surface.

[0073] As described above, since the fluorine compounds are derived from HF contained in the solution used for processing, the concentration of fluorine compounds can be highest on the surface of the first insulating pattern 170, which is in direct contact with the solution. In one embodiment, the concentration of fluorine compounds can decrease from the first surface of the first insulating pattern 170 to the second surface of the first insulating pattern 170, wherein the first surface faces the second surface. The second surface of the first insulating pattern 170 can be in contact with the first conductive layer 160.

[0074] In one embodiment, the first insulating pattern 170 may not include nitrogen compounds. Here, the absence of nitrogen compounds can mean that nitrogen compounds are included in the first insulating pattern 170 in an amount less than the detection limit of the detection device.

[0075] Nitrogen compounds can be represented by Equation 1: <Formula 1> NR1R2R3OH In Equation 1, R1 to R3 can each be independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C6-C 30 aryl groups, and substituted or unsubstituted C7-C groups 30 Aryl alkyl group.

[0076] For example, R1 to R3 in Formula 1 can each be independently selected from hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, and benzyl.

[0077] In one or more embodiments, the nitrogen compound may be tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide, or any combination thereof.

[0078] The first insulating pattern 170 may further include a nitrogen compound and a first material, wherein the first material is different from the fluorine compound and the nitrogen compound. In an embodiment, the first insulating pattern 170 may consist primarily of the first material. Here, the phrase "consistent primarily of the first material" may indicate that the nitrogen compound and the fluorine compound are included in the first insulating pattern 170 in amounts less than the detection limit of the detection device.

[0079] For example, the amount of the first material in the first insulating pattern 170 may be greater than or equal to about 98 wt%. In one or more embodiments, the amount of the first material in the first insulating pattern 170 may be greater than about 99 wt%.

[0080] The first material may be an alkali-soluble polymer. In one embodiment, the first material may be a siloxane polymer, but the embodiments disclosed herein are not limited to this.

[0081] For example, the first material may include repeating units represented by Formula 2, but the embodiments of this disclosure are not limited thereto: <Formula 2>

[0082] In Equation 2, L 21 and L 22 Each can be independently C(R) 23 (R) 24 ) or O-Si-O, a21 and a22 can each be 0, 1, 2 or 3 independently. X 21 It can be O or O-Si-O. b21 can be 1, 2, or 3, and R 21 To R 24 Each can be independently selected from hydrogen, hydroxyl, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C3-C 10 Cycloalkyl, substituted or unsubstituted C6-C 30 Aryl and substituted or unsubstituted C7-C 30 Aryl alkyl group.

[0083] In one embodiment, the first material may have an average molecular weight of about 1,000 to about 15,000, but the embodiments of this disclosure are not limited thereto. In one embodiment, the first material may have an average molecular weight of about 1,000 to about 10,000.

[0084] As described above, since nitrogen compounds are included in the developer, the concentration of nitrogen compounds can be highest on the surface of the initial first insulating pattern that is in direct contact with the developer. In one embodiment, the concentration of nitrogen compounds can decrease from the first surface of the first insulating pattern 170 to the second surface of the first insulating pattern 170, wherein the first surface faces the second surface and the first surface is farther from the first conductive layer 160 than the second surface. The second surface of the first insulating pattern 170 can contact the first conductive layer 160.

[0085] For example, the first insulating pattern 170 may include a first region and a second region. The second region may be located between the first conductive layer 160 and the first region, and the amount of the first material in the first region may be greater than the amount of the first material in the second region.

[0086] In one embodiment, the ratio of the amount of fluorine compound in the first region to the amount of fluorine compound in the second region may be from about 10:1 to about 10,000:1, but the embodiments of this disclosure are not limited thereto.

[0087] Despite Figure 2 The thickness of the first region is not shown, but the ratio of the thickness of the second region to that of the first region can be from about 1:10 to about 1:1000, but the embodiments disclosed herein are not limited to this. The surface of the second region may contact the first conductive layer 160.

[0088] In one embodiment, the ratio of the amount of nitrogen compound in the first region to the amount of nitrogen compound in the second region may be from about 10:1 to about 10,000:1, but the embodiments of this disclosure are not limited thereto.

[0089] The ratio of the thickness of the first region to the thickness of the second region can be from approximately 1:10 to approximately 1:1000, but the embodiments disclosed herein are not limited thereto. The surface of the second region may contact the first conductive layer 160.

[0090] In one embodiment, the first insulating pattern 170 may have a first opening exposing a portion of the first conductive layer 160, and the pixel electrode 180 may contact the first conductive layer 160 through the first opening of the first insulating pattern 170. In one embodiment, the portion of the first conductive layer 160 exposed by the first opening may contain molybdenum (Mo). In one embodiment, the first conductive layer 160 may have a Mo / Al / Ti structure, and the portion of the first conductive layer 160 exposed by the first opening may contain Mo. Because Mo has relatively high resistance to HF (e.g., higher resistance to HF than Ti), even if the first conductive layer 160 is exposed to HF during the manufacture of the display device 1, the degradation of the display device 1 may be relatively small or non-existent.

[0091] When the organic light-emitting device (OLED) is a top-emitting device, the pixel electrode 180 can be formed as a reflective electrode. The reflective electrode can contain Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or any combination thereof in the form of a single layer or multiple layers. For example, the reflective electrode may include a reflective layer and a transparent or translucent electrode layer formed on the reflective layer, the reflective layer containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or any combination thereof.

[0092] When the organic light-emitting device (OLED) is a bottom-emitting device, the pixel electrode 180 may include a transparent material such as ITO, IZO, ZnO, or In2O3, and may be formed as a transparent or semi-transparent electrode. For example, the pixel electrode 180 may have a stacked structure of ITO / Ag / ITO.

[0093] A second insulating pattern 191 may be disposed on the pixel electrode 180 and may contact the first insulating pattern 170 outside the pixel electrode 180. The second insulating pattern 191 may have a second opening that exposes a portion of the pixel electrode 180, for example, the central portion of the pixel electrode 180. As a result, a light-emitting area is defined in the pixel.

[0094] The second insulating pattern 191 may include siloxane polymers, imide polymers, amide polymers, olefin polymers, acrylic polymers, phenolic polymers, or any combination thereof.

[0095] In one embodiment, the first insulating pattern 170 may include a first material, the second insulating pattern 191 may include a second material, and the first and second materials may include the same material. In one embodiment, the first material may be the same as the second material. In one embodiment, the first and second materials may each be a siloxane polymer, but the embodiments disclosed herein are not limited. In a cross-section of the display device 1, the boundary between the first insulating pattern 170 and the second insulating pattern 191 may be substantially nonexistent or not observable.

[0096] An organic light-emitting device (OLED) may include a pixel electrode 180 disposed on a first insulating pattern 170, a counter electrode 210 facing the pixel electrode 180, and an intermediate layer 200 between the pixel electrode 180 and the counter electrode 210.

[0097] The intermediate layer 200 includes an emitting layer for emitting light and at least one functional layer selected from a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL). However, the embodiments are not limited thereto, and various other functional layers may be disposed on the pixel electrode 180.

[0098] The emitting layer can be a red emitting layer, a green emitting layer, or a blue emitting layer. In one or more embodiments, the emitting layer can have a multilayer structure in which the red emitting layer, the green emitting layer, and the blue emitting layer are stacked to emit white light, or it can have a single-layer structure including red luminescent material, green luminescent material, and blue luminescent material.

[0099] In one embodiment, the intermediate layer 200 can be provided only to the emission area AA by using a mask having an opening corresponding to the emission area AA of the display device 1, such as a fine metal mask (FMM).

[0100] In one or more embodiments, the emission layer of the intermediate layer 200 can be provided only to the emission area AA by using an FMM having an opening corresponding to the emission area AA of the display device 1, and its other functional layers can be provided to the emission area AA and the non-emission area NAA by using an opening mask.

[0101] The relative electrode 210 can be disposed on the intermediate layer 200. The relative electrode 210 can be a reflective electrode, a transparent electrode, or a translucent electrode. For example, the relative electrode 210 can include a metal with a small work function, and can include Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or any combination thereof.

[0102] Despite Figure 2 The substrate is not shown, but a relative substrate may be further provided on the relative electrode 210. The relative substrate can be understood by referring to the description provided with reference to the substrate 100.

[0103] Despite Figure 2 Although not shown, a black matrix and a color filter can be provided on the surface facing the substrate 100 opposite to the substrate. The color filter can be arranged to correspond to the emission area AA of the display device 1. The black matrix can be set to correspond to an area other than the emission area AA of the display device 1.

[0104] Despite Figure 2 Although not shown, a protective layer may be provided between the substrate and the electrode 210. The protective layer may comprise one or more inorganic and / or organic films.

[0105] Despite Figure 2 Not shown, but various functional layers may be further provided on the opposing substrate. For example, a functional layer may be an anti-reflective layer that minimizes reflections on the upper surface of the opposing substrate, or a stain-resistant layer that prevents contamination such as marks left by the user's hands (e.g., fingerprints).

[0106] In one or more embodiments, instead of a supporting substrate, a thin-film encapsulation layer may be disposed on substrate 100. The thin-film encapsulation layer may include an inorganic encapsulation layer comprising at least one inorganic material, and an organic encapsulation layer comprising at least one organic material. In one or more embodiments, the thin-film encapsulation layer may have a stacked structure of a first inorganic encapsulation layer / an organic encapsulation layer / a second inorganic encapsulation layer.

[0107] In the following text, reference will be made to Figures 3 to 5A method for manufacturing display device 1 is described. Figures 3 to 5 This is a schematic cross-sectional view illustrating a method for manufacturing a display device 1 according to an embodiment.

[0108] Reference Figures 3 to 5 A method for manufacturing a display device 1 according to an embodiment includes: providing a substrate 100; forming a first conductive layer 160 on the substrate 100; forming a preliminary first insulating pattern 170A on the first conductive layer 160; forming the first insulating pattern 170 by developing with a first solution; and treating the first insulating pattern 170 with a second solution, wherein the first solution includes a nitrogen compound and the second solution includes HF.

[0109] For example, the first conductive layer 160 can be formed by a dry process. The materials included in the first conductive layer 160 are the same as those described above.

[0110] For example, the initial first insulating pattern 170A can be formed by spin coating or screen printing of a composition comprising the first material.

[0111] In one embodiment, the preliminary first insulating pattern 170A can be exposed through a mask with openings before development with the first solution. As the light source for exposure, low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, metal halide lamps, argon lasers, etc., can be used, and ultraviolet light, X-rays, electron beams, etc., can also be used. The exposure intensity depends on the type of components included in the preliminary first insulating pattern 170A, the mixing ratio of the components, and its dry film thickness. For example, the exposure intensity can be from approximately 10 mW / cm². 3 Up to approximately 50 mW / cm 3 (Through a 365nm sensor), and the irradiation time can be from about 5 seconds to about 1 minute, but the embodiments disclosed herein are not limited thereto.

[0112] Development is performed using a first solution to form a first insulating pattern 170. The nitrogen compound in the first solution can be understood to be the same as described above and can be an alkaline aqueous solution. The amount of nitrogen compound in the first solution can be from about 0.1 wt% to about 5 wt%. In one embodiment, the amount of nitrogen compound in the first solution can be from about 2 wt% to about 3 wt%. However, embodiments of this disclosure are not limited thereto.

[0113] The first insulating pattern 170 can be cured. The curing method can be thermosetting or photocuring, and is not particularly limited thereto. In one embodiment, the first insulating pattern 170 can be thermocured at about 200°C to about 270°C. By curing the first insulating pattern 170, the heat resistance, light resistance, adhesion, crack resistance, chemical resistance, strength, and storage stability of the first insulating pattern 170 can be improved.

[0114] In one embodiment, residues can be removed by dry etching. When the first insulating pattern 170 is formed using development with a first solution, the first insulating pattern 170 may undesirably remain on the first conductive layer 160. Dry etching can be performed to remove any residues that may remain on the first conductive layer 160. Dry etching can be performed using oxygen (O2) gas or CF4 gas, but the embodiments disclosed herein are not limited to this.

[0115] The second solution can be used for processing. Because the processing is performed using the second solution, the first insulating pattern 170 may not contain nitrogen compounds, or the amount of nitrogen compounds in the first insulating pattern 170 may be less than approximately 1 wt%. As a result, the degradation of the display device 1 when processing with the second solution is performed can be relatively lower than the degradation of the display device 1 when processing with the second solution is not performed.

[0116] In one embodiment, the lifetime of display device 1 can be increased by at least twice the lifetime of display device 1 when treated with the second solution, compared to when treatment with the second solution is not performed. The HF in the second solution can suppress hydrogen bonds that may form between the first material and the nitrogen compound in the first insulating pattern 170. As a result, the concentration of the nitrogen compound in the first insulating pattern 170 can be reduced. For example, when the preliminary first insulating pattern 170A is a siloxane polymer, the surface of the preliminary first insulating pattern 170A may have OH groups. When the preliminary first insulating pattern 170A containing the siloxane polymer is developed with a first solution including a nitrogen compound having OH groups (such as TMAH), hydrogen bonds can form between the OH groups of the siloxane polymer and the OH groups of TMAH. When the resulting structure is treated with a second solution containing HF, the hydrogen bonds can be suppressed, and therefore, the concentration of the nitrogen compound in the first insulating pattern 170 can be reduced.

[0117] For example, the second solution may include a buffered oxide etchant (BOE), but the embodiments of this disclosure are not limited thereto.

[0118] In one embodiment, the method may further include forming a pixel electrode 180 disposed on a first insulating pattern 170 and electrically connected to a first conductive layer 160 prior to the processing. In this embodiment, since the first conductive layer 160 is substantially not exposed to the second solution, the materials included in the first conductive layer 160 are not limited.

[0119] In one embodiment, the method may further include: after the processing, forming a pixel electrode 180 disposed on the first insulating pattern 170 and electrically connected to the first conductive layer 160. In this embodiment, since a portion of the first conductive layer 160 is exposed to the second solution, the material included in the first conductive layer 160 can have relatively high resistance to HF. In one embodiment, the portion of the first conductive layer 160 exposed by the first opening may contain molybdenum (Mo).

[0120] Display device 1 can be implemented as an electronic device 1000 such as a mobile phone, video phone, smartphone, smartboard, smartwatch, tablet PC, laptop computer, computer monitor, television, digital broadcasting terminal, personal digital assistant (PDA), portable multimedia player (PMP), head-mounted display (HMD) or vehicle navigation device.

[0121] Figure 6 This is a schematic block diagram illustrating the structure of an electronic device 1000 according to an embodiment; and Figure 7A and Figure 7B This is a schematic perspective view illustrating an electronic device 1000 according to an embodiment of the present disclosure.

[0122] Reference Figure 6 The electronic device 1000 may include a processor 1010, a memory device 1020, a storage device 1030, an input / output device 1040, a power supply 1050, and a display device 1060. The display device 1060 may correspond to... Figure 1 The display device 1. The electronic device 1000 may also include various ports for communicating with video cards, sound cards, memory cards or USB devices, or various ports for communicating with other systems.

[0123] In one embodiment, such as Figure 7A As shown, the electronic device 1000 can be implemented as a television set. In another embodiment, as... Figure 7B As shown, the electronic device 1000 can be implemented as a smartphone. However, these are illustrative examples of the electronic device 1000, and the embodiments of this disclosure are not limited thereto.

[0124] According to various embodiments of the present disclosure, a display device and a method for manufacturing the display device are provided that can prevent or reduce image quality degradation during manufacturing processes or use.

[0125] However, the above effects are examples, and the effects of the embodiments have been described in detail with reference to the foregoing description.

[0126] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the following claims.

Claims

1. A method for manufacturing a display device, wherein, The method includes: A conductive layer is formed on the substrate; A preliminary insulating pattern is formed on the conductive layer; A first insulating pattern is formed by developing with a first solution; and The first insulating pattern is treated with a second solution, wherein... The first solution comprises a nitrogen compound, and The second solution includes a buffered oxide etchant.

2. The method according to claim 1, wherein, The buffer oxide etchant includes HF.

3. The method according to claim 1, wherein, The method further includes forming a pixel electrode on the first insulating pattern prior to the processing, wherein the pixel electrode is electrically connected to the conductive layer.

4. The method according to claim 1, wherein, The method further includes: after the processing, forming a pixel electrode on the first insulating pattern, wherein the pixel electrode is electrically connected to the conductive layer.

5. The method according to claim 1, wherein, The method further includes: curing the first insulating pattern before treating the first insulating pattern with the second solution.

6. The method according to claim 5, wherein, The method further includes removing residues on the conductive layer by dry etching after curing the first insulating pattern and before treating the first insulating pattern with the second solution.

7. The method according to claim 6, wherein, The dry etching is performed using oxygen or CF4 gas.

8. The method according to claim 1, wherein, The nitrogen compound is represented by Formula 1: <Formula 1> NR1R2R3OH In Equation 1, R1 to R3 are each independently selected from hydrogen, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C6-C 30 aryl, and substituted or unsubstituted C7-C 30 Aryl alkyl group.

9. The method according to claim 1, wherein, The nitrogen compound includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide, or any combination thereof.

10. The method according to claim 1, wherein, The first insulating pattern is mainly composed of the first material.

11. The method according to claim 10, wherein, The first material includes an alkali-soluble polymer.

12. The method according to claim 10, wherein, The first material includes a siloxane polymer.

13. The method according to claim 1, wherein, The conductive layer comprises molybdenum, aluminum, titanium, neodymium, copper, or a combination thereof.

14. The method according to any one of claims 1, 2, 5 to 13, wherein, The method further includes: A pixel electrode electrically connected to the conductive layer is formed on the first insulating pattern.

15. The method according to claim 14, wherein, The first insulating pattern includes an opening that exposes a portion of the conductive layer, and The pixel electrode contacts the conductive layer through the opening.

16. The method according to claim 15, wherein, The portion of the conductive layer exposed by the opening contains molybdenum.

17. The method of claim 14, wherein, The method further includes: A second insulating pattern is formed on the pixel electrode, wherein the second insulating pattern contacts the first insulating pattern outside the pixel electrode.

18. The method according to claim 17, wherein, The first insulating pattern includes a first material. The second insulating pattern includes a second material, and The first material and the second material comprise the same material.

19. The method according to any one of claims 1 to 13, wherein, The method further includes: before forming the conductive layer, An active layer is formed on the substrate; A first insulating layer is formed on the active layer; A gate electrode is formed on the first insulating layer; A second insulating layer is formed on the gate electrode; and Contact holes are formed in the first insulating layer and the second insulating layer.

20. The method according to claim 19, wherein, The conductive layer is electrically connected to the active layer through the contact hole.

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