Conductive film adjusting system, conductive film adjusting method and pulse type space electric thruster

Abstract

The invention provides a conductive film adjusting system, a conductive film adjusting method and a pulse type space electric thruster. The conductive film adjusting system comprises a resistance measuring module, a control module, a power processing unit and a high-voltage pulse unit. The resistance measurement module detects the resistance value of the conductive film; the control module determines whether the thickness of the conductive film is in a set thickness range based on a comparison result of the resistance value of the conductive film and a preset resistance value range; the control module is also used for controlling the high-voltage pulse unit to ablate the conductive film when the resistance value of the conductive film is smaller than a set lower limit resistance value; the control module is further used for controlling the power processing unit to discharge through the cathode and the anode when the resistance value of the conductive film is larger than the set upper limit resistance value, and film deposition is increased. When the resistance value is not in the preset resistance value range, the thickness of the conductive film is adjusted through the power processing unit and the high-voltage pulse unit, the thruster failure caused by the thickness factor is avoided, and the service life of the thruster is prolonged.

Description

Technical Field

[0001] This invention relates to the field of technology, and in particular to a conductive thin film conditioning system, a conductive thin film conditioning method, and a pulsed space electric thruster. Background Technology

[0002] In the innovation of micro- and nano-satellite propulsion technology, vacuum arc thrusters (VAT) or micro-cathode arc thrusters (μCAT) have significant advantages in power adaptability compared to traditional electric propulsion technologies (such as Hall thrusters requiring 100W-10kW power). They can achieve μN·s-level single-pulse impulses and ultra-low power consumption (W-level) operation through the principle of pulsed arc ablation. However, the lifespan limit (approximately 10^5 pulses) caused by the ablation rate of the cathode material severely restricts the application prospects of CubeSats in long-term scientific observations (such as greenhouse gas remote sensing) and constellation networking (such as IoT communication). Therefore, extending the lifespan of the thrusters has become a key research focus.

[0003] The core mechanism limiting the lifespan of VAT or μCAT stems from the anomalous evolution of the conductive film in the ceramic insulator between its electrodes. During continuous arc discharge, bombardment by charged particles leads to the formation of a conductive metal deposition layer on the surface of the ceramic insulator, known as a conductive film. The formation of this conductive film significantly alters the electric field distribution, triggering two failure modes: when the conductive film is too thick, it causes a short circuit between the electrodes, completely blocking the discharge process; when the conductive film is too thin, it causes an open circuit between the anode and cathode, preventing the generation of initial plasma. Summary of the Invention

[0004] The main objective of this invention is to provide a conductive thin film conditioning system, a conductive thin film conditioning method, and a pulsed space electric thruster, with the aim of extending the service life of the thruster.

[0005] To achieve the above objectives, the conductive thin film adjustment system proposed in this invention is applied to a pulsed space electric thruster, wherein a conductive thin film exists on the surface of the insulator between the cathode and anode of the pulsed space electric thruster;

[0006] The conductive thin film conditioning system includes: a resistance measurement module, a control module, a power processing unit, and a high-voltage pulse unit; The control module is connected to the resistance measurement module, the power processing unit, and the high-voltage pulse unit respectively; the resistance measurement module is electrically connected to the conductive film, the high-voltage pulse unit is electrically connected to the conductive film, and the power processing unit is electrically connected to the cathode and the anode. The resistance measurement module is connected to the control module and is used to detect the resistance value of the conductive film and output it to the control module; the control module is used to determine whether the thickness of the conductive film is within a set thickness range based on the comparison result between the resistance value of the conductive film and a preset resistance value range. The control module is used to output a first power command to the high-voltage pulse unit when the thickness corresponding to the resistance value of the conductive film is greater than a set upper limit value; when the high-voltage pulse unit receives the first power command, it outputs a high-voltage pulse corresponding to the first power command, and the high-voltage pulse is used to ablate the conductive film to reduce the thickness of the conductive film. The control module is further configured to output a second power command to the power processing unit when the thickness corresponding to the resistance value of the conductive film is less than a set lower limit value; the power processing unit is configured to output a discharge power corresponding to the second power command through the cathode and the anode when receiving the second power command, so as to increase the film deposition and increase the thickness of the conductive film.

[0007] Optionally, the resistance measurement module includes: a resistance measurement circuit and multiple conductive detection lines; The multiple conductive detection lines are connected one-to-one to multiple measurement nodes on the conductive film. The input terminal of the resistance measurement circuit is connected to the plurality of conductive detection lines, and the output terminal is connected to the control module. The resistance measurement circuit is used to detect the resistance value between each pair of adjacent measurement nodes and output it to the control module. The control module is used to determine the thickness of the conductive film between the multiple adjacent measurement nodes based on the resistance values ​​between the multiple adjacent measurement nodes.

[0008] Optionally, the distance between adjacent measurement nodes is equal.

[0009] Optionally, the high-voltage pulse unit is electrically connected to the plurality of conductive detection lines respectively; The control module is further configured to, based on the preset resistance range and the resistance value between two adjacent measurement nodes, determine that the thickness corresponding to the resistance value of the conductive film between the two adjacent measurement nodes is greater than the set upper limit value, and output a corresponding first power command to the high-voltage pulse unit based on the resistance value of the two measurement nodes and the comparison result. The high-voltage pulse unit is used to output a high-voltage pulse corresponding to the first power command by connecting the conductive detection lines of the two corresponding measurement nodes after receiving the first power command.

[0010] Optionally, the preset resistance value ranges from 20Ω to 1MΩ.

[0011] This invention also proposes a method for adjusting a conductive thin film, wherein the method is applied to the control module of the conductive thin film adjustment system; the conductive thin film adjustment method includes: Obtain the resistance value of the conductive film on the surface of the insulator between the cathode and anode of a pulsed space electric thruster; Compare the resistance value of the conductive film with a preset resistance value range; When the resistance of the conductive film is less than the set lower limit resistance value, a high voltage pulse is output to the conductive film; Alternatively, when the resistance of the conductive film exceeds a set upper limit, the power processing unit discharges to the cathode and anode of the pulsed space electric thruster to increase the deposition of the conductive film.

[0012] Optionally, multiple measurement nodes are provided on the surface of the conductive film; The method of obtaining the resistance value of the conductive thin film on the surface of the insulator between the cathode and anode of the pulsed space electric thruster includes: The resistance value between each pair of adjacent measurement nodes is detected by setting multiple measurement nodes on the conductive film.

[0013] Optionally, if the resistance value between two adjacent measurement nodes is greater than the preset resistance value range, the power processing unit discharges a large power to the cathode and anode of the pulsed space electric thruster until the resistance value between all two adjacent measurement nodes is less than the preset maximum resistance value. If the resistance value between two adjacent measuring nodes is less than the preset resistance value range, a high voltage pulse is output through the two adjacent measuring nodes until the resistance value between the two adjacent measuring nodes is within the preset resistance value range. If the resistance value between multiple adjacent measurement nodes is less than the preset resistance value range, a high voltage pulse is output to the conductive film through multiple adjacent measurement nodes in sequence until the resistance value between the adjacent measurement nodes is within the preset resistance value range. When the resistance value between two adjacent measurement nodes of the conductive film is within the preset resistance value range, normal discharge is carried out through the cathode and anode of the pulsed space electric thruster.

[0014] Optionally, based on the resistance value of the conductive film, the discharge voltage value for the power processing unit to discharge to the cathode and anode of the pulsed space electric thruster is adjusted.

[0015] The present invention also proposes a pulsed space electric thruster, wherein the pulsed space electric thruster includes the conductive thin film adjustment system.

[0016] This invention provides a conductive thin film conditioning system, a conductive thin film conditioning method, and a pulsed space electric thruster. The conductive thin film conditioning system includes: a resistance measurement module, a control module, a power processing unit, and a high-voltage pulse unit. The control module is connected to the resistance measurement module, the power processing unit, and the high-voltage pulse unit, respectively. The resistance measurement module is electrically connected to the conductive film, the high-voltage pulse unit is electrically connected to the conductive film, and the power processing unit is electrically connected to the cathode and anode. The resistance measurement module is connected to the control module and is used to detect the resistance value of the conductive film and output it to the control module. The control module is used to determine whether the thickness of the conductive film is within a set thickness range based on a comparison between the resistance value of the conductive film and a preset resistance value range. The control module is used to output a first power command to the high-voltage pulse unit when the thickness corresponding to the resistance value of the conductive film is greater than the set upper thickness limit. When the high-voltage pulse unit receives the first power command, it outputs a high-voltage pulse corresponding to the first power command, which is used to ablate the conductive film to reduce its thickness. The control module is also used to output a second power command to the power processing unit when the thickness corresponding to the resistance value of the conductive film is less than the set lower thickness limit. When the power processing unit receives the second power command, it outputs a discharge power corresponding to the second power command through the cathode and the anode to increase film deposition and thus increase the thickness of the conductive film. This invention measures the resistance of a conductive film and, based on a comparison of the resistance value with a preset resistance range, uses a power processing unit and a high-voltage pulse unit to ensure the thickness of the conductive film is within a set range. This prevents thruster failure caused by an excessively thick or thin conductive film, thereby extending the thruster's service life. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of the first embodiment of the conductive thin film conditioning system of the present invention; Figure 2 This is a schematic diagram of the structure of the second embodiment of the conductive thin film conditioning system of the present invention; Figure 3 This is a schematic diagram of the steps in an embodiment of the conductive thin film adjustment method of the present invention; Figure 4This is a schematic diagram of the steps of another embodiment of the conductive thin film conditioning method of the present invention.

[0019] Explanation of icon numbers: 10. Resistance measurement module; 20. Control module; 30. Power output unit; 40. High voltage pulse unit.

[0020] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0022] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0023] In this invention, unless otherwise explicitly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0024] Furthermore, in this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0025] The thruster head of a pulsed space electric thruster consists of a cathode, an anode, and an insulator. Based on the electrode structure, it can be classified as a stacked structure, a ring structure, or a coaxial structure. A conductive thin film exists on the surface of the insulator between the cathode and anode. During ignition discharge, a voltage of several hundred volts first breaks down the gaps or defects in the film, generating conductive vapor that induces an arc discharge between the electrodes. Under the thermal effect of the current, the cathode material evaporates and ionizes; part of it is accelerated out to form the reaction thrust, while the other part is deposited to form a new conductive thin film. Differences in redeposition rates can lead to under-deposition or over-deposition. Under-deposition results in excessively high impedance, preventing arc breakdown, while over-deposition results in excessively low impedance and excessive leakage current. Under-deposition corresponds to an excessively thin conductive film, while over-deposition corresponds to an excessively thick conductive film.

[0026] Conductive films are conductors, and the resistance of a conductor is related to its cross-sectional area, which corresponds to the thickness of the conductive film. The thickness of a conductive film is negatively correlated with its resistance; therefore, a mapping relationship between the thickness and resistance can be established. Once the preset resistance range of the conductive film is determined, the corresponding thickness range can be obtained.

[0027] To extend the service life of a thruster, this invention proposes a conductive thin film adjustment system applied to a pulsed space electric thruster, wherein a conductive thin film exists on the surface of the insulator between the cathode and anode of the pulsed space electric thruster; for example... Figure 1 As shown, in the first embodiment, the conductive thin film adjustment system includes: a resistance measurement module 10, a control module 20, a power processing unit, and a high-voltage pulse unit 40; The control module 20 is connected to the resistance measurement module 10, the power processing unit, and the high-voltage pulse unit 40 respectively; the resistance measurement module 10 is electrically connected to the conductive film, the high-voltage pulse unit 40 is electrically connected to the conductive film, and the power processing unit is electrically connected to the cathode and the anode; The resistance measurement module 10 is connected to the control module 20 and is used to detect the resistance value of the conductive film and output it to the control module 20; the control module 20 is used to determine whether the thickness of the conductive film is within a set thickness range based on the comparison result between the resistance value of the conductive film and a preset resistance value range. The control module 20 is used to output a first power command to the high-voltage pulse unit 40 when the resistance value of the conductive film is less than a set lower limit resistance value; when the high-voltage pulse unit 40 receives the first power command, it outputs a high-voltage pulse corresponding to the first power command, and the high-voltage pulse is used to ablate the conductive film. The control module 20 is further configured to output a second power command to the power processing unit when the resistance value of the conductive thin film is greater than a set upper limit resistance value; the power processing unit is configured to output a discharge power corresponding to the second power command through the cathode and the anode when receiving the second power command, thereby increasing the thin film deposition.

[0028] It should be noted that there is a direct, negative correlation between the thickness of a conductive film and its resistance. Specifically, the thicker the film, the lower the resistance; the thinner the film, the higher the resistance. Because of this mapping relationship between the thickness and resistance of a conductive film, its thickness can be determined based on its resistance value.

[0029] It should be noted that the resistance measurement module 10 is electrically connected to the conductive thin film on the surface of the insulator between the positive cathode and anode of the pulsed space thruster. It is easy to understand that the mapping relationship between the resistance value measured by the resistance measurement module 10 and the thickness of the conductive thin film can be obtained by researchers in advance through experiments. Based on the obtained conductive thin film thickness-resistance value mapping relationship, when researchers determine one of the set thickness range or the set resistance value range, the other can be obtained.

[0030] It is easy to understand that since the thickness of the conductive film is negatively correlated with the resistance value of the conductive film, if the resistance value of the conductive film is less than the minimum value (set lower limit resistance value) in the set resistance value range, the thickness of the conductive film is determined to be greater than the set thickness range; if the resistance value of the conductive film is greater than the maximum value (set upper limit resistance value) in the set resistance value range, the thickness of the conductive film is determined to be less than the set thickness range.

[0031] The control module 20 can determine whether the thickness of the conductive film is within a preset thickness range based on a comparison between the resistance value of the conductive film and a preset resistance value range. In one example, the control module 20 stores a conductive film thickness-resistance value mapping table. Based on this mapping table, the control module 20 determines the preset resistance value range corresponding to the set thickness range, and then determines whether the thickness of the conductive film is within the preset thickness range by comparing the resistance value of the conductive film with the preset resistance value range. In another example, after determining the set thickness range, the researchers obtain the preset resistance value range corresponding to the set thickness range based on the conductive film thickness-resistance value mapping table, and store the preset resistance value range in the control module 20 for easy comparison.

[0032] The output of the power processing unit is connected to the cathode and anode of the pulsed space electric thruster, respectively. By applying sufficient voltage and power between the cathode and anode, an electric arc is ignited, achieving arc ablation and increasing the thickness of the conductive film. The high-voltage pulse unit 40 is electrically connected to the conductive film. Specifically, the high-voltage pulse unit 40 can have multiple electrical contact points with the conductive film, so that when the high-voltage pulse unit 40 discharges synchronously or sequentially through multiple electrical contact points, the current path during the discharge process can be integrated and merged at the end of the discharge. The integrated and merged current flows through the conductive film once, thereby enabling the release of a high-voltage pulse at any position of the conductive film, breaking down the conductive film into plasma and reducing the thickness of the conductive film. For example: in the first discharge, the high-voltage pulse unit 40 discharges the first segment of the conductive film; in the second discharge, the high-voltage pulse unit 40 discharges the second segment of the conductive film; in the third discharge, the high-voltage pulse unit 40 discharges the third segment of the conductive film; the first, second, and third segments of the conductive film can form a complete conductive film.

[0033] It should be noted that while the high-voltage pulse unit 40 can reduce the thickness of the conductive film between any two electrical contact points, the power processing unit requires discharge through the cathode and anode of the pulsed space electric thruster. During the arc ablation process, the ejected metal plasma and droplets disperse at high speed in all directions. Therefore, during operation, the power processing unit cannot directionally increase the thickness of a specific section of the conductive film; instead, it increases the overall thickness of the conductive film.

[0034] This invention utilizes the physical process (sputtering) of the pulsed space electric thruster itself to thicken the thin film, while simultaneously introducing a novel reverse process (local ablation) to thin the film. Through this bidirectional, active closed-loop control, the system can dynamically maintain the thickness of the conductive film within an optimal range, thereby fundamentally solving the problem of short circuits or open circuits caused by abnormal film evolution and greatly extending the thruster's lifespan.

[0035] It is easy to imagine that after the power processing unit discharges for a period of time, conductive film segments with excessive thickness may appear; the control module 20 needs to reduce the thickness of the conductive film with excessive thickness.

[0036] The preset resistance value range can be determined by the R&D personnel based on the defined thickness range.

[0037] The core task of the power processing unit is to convert, regulate, and control electrical energy to provide stable, efficient, and compliant power output. In one example, the power processing unit may include intelligent integrated power device chips and power integrated circuits. The core task of the high-voltage pulse unit 40 is to generate instantaneous high-voltage, short-pulse-width, and fast-rise-time pulse power. In one example, the high-voltage pulse unit 40 may include a dedicated high-voltage pulse generator / pulse power supply, a pulse power supply based on a Marx generator circuit, or a laser trigger and linear transformer drive source, etc.

[0038] The present invention determines whether the thickness of the conductive film is within a set thickness range by detecting the resistance value of the conductive film, and performs corresponding control accordingly.

[0039] The resistance measurement module 10 can determine the resistance value of the conductive film by detecting the voltage drop across the two ends of the conductive film and the current flowing through it.

[0040] The control module 20 can achieve corresponding control through PID algorithms or other control strategies. The control module 20 may include controllers such as MCUs, FPGAs, or SOCs.

[0041] Specifically, the control module 20 acquires the resistance value between the two measurement nodes measured by the resistance measurement circuit. When the resistance value is less than a set lower limit (i.e., the corresponding conductive film thickness exceeds a set thickness range), it outputs a corresponding first power command to the high-voltage pulse unit 40 to reduce the thickness of the conductive film. The first power command may include: the pulse signal amplitude and the pulse duration. After receiving the first power command, the high-voltage pulse unit 40 outputs a high-voltage pulse corresponding to the first power command. The high-voltage pulse is used to ablate the conductive film to reduce its thickness.

[0042] When the resistance value is greater than a set upper limit (i.e., the corresponding conductive film thickness is less than a set thickness range), the control module 20 outputs a corresponding second power command to the power processing unit to increase the thickness of the conductive film. The second power command may include: voltage amplitude and duration.

[0043] The power output unit 30 receives instructions from the control module 20 and applies electrical power of a specific form and magnitude to the conductive film to actively repair the thickness of the conductive film and restore it to the preset ideal working range.

[0044] This invention provides a conductive thin film adjustment system, comprising: a resistance measurement module 10, a control module 20, a power processing unit, and a high-voltage pulse unit 40; the control module 20 is connected to the resistance measurement module 10, the power processing unit, and the high-voltage pulse unit 40 respectively; the resistance measurement module 10 is electrically connected to the conductive thin film, the high-voltage pulse unit 40 is electrically connected to the conductive thin film, and the power processing unit is electrically connected to the cathode and anode; the resistance measurement module 10 is connected to the control module 20 and is used to detect the resistance value of the conductive thin film and output it to the control module 20; the control module 20 is used to compare the resistance value of the conductive thin film with a preset resistance value range. As a result, it is determined whether the thickness of the conductive film is within a set thickness range. The control module 20 is used to output a first power command to the high-voltage pulse unit 40 when the resistance value of the conductive film is less than a set lower limit resistance value. When the high-voltage pulse unit 40 receives the first power command, it outputs a high-voltage pulse corresponding to the first power command, which is used to ablate the conductive film. The control module 20 is also used to output a second power command to the power processing unit when the resistance value of the conductive film is greater than a set upper limit resistance value. When the power processing unit receives the second power command, it outputs a discharge power corresponding to the second power command through the cathode and the anode, thereby increasing film deposition. This invention measures the resistance value of the conductive film and, based on the comparison between the resistance value and a preset resistance value range, uses the power processing unit and the high-voltage pulse unit 40 to ensure that the thickness of the conductive film is within a set range, avoiding thruster failure due to excessively thick or thin conductive films, thereby extending the thruster's service life.

[0045] In a second embodiment of the present invention, the resistance measurement module 10 includes: a resistance measurement circuit and multiple conductive detection lines; The multiple conductive detection lines are connected one-to-one to multiple measurement nodes on the conductive film. The input terminal of the resistance measurement circuit is connected to the plurality of conductive detection lines, and the output terminal is connected to the control module 20. The resistance measurement circuit is used to detect the resistance value between each two adjacent measurement nodes and output it to the control module 20. The control module 20 is used to determine whether the resistance value of the conductive film between the multiple adjacent measurement nodes conforms to a preset resistance value range based on the resistance value between the multiple adjacent measurement nodes.

[0046] like Figure 2 As shown, Figure 2 This is a structural diagram of this embodiment. A conductive thin film exists between the cathode and anode of the pulsed space electric thruster, and the conductive thin film has multiple measurement nodes. Figure 2 An example is taken where measurement nodes are arranged sequentially on a circular conductive film. Here, 1 represents the anode of the pulsed space thruster, 2 represents the conductive film, 3 represents the cathode of the pulsed space thruster, 4 and 5 represent measurement nodes, and 6 and 7 represent conductive detection lines. The detection nodes can be connected to the resistance measurement circuit and the high-voltage pulse module via the conductive detection lines.

[0047] It should be noted that in a vacuum pulsed space electric thruster, the uniformity of the conductive film at various points has a decisive impact on its performance, stability, and lifespan. Non-uniform films are one of the causes of thruster failure. In this embodiment, multiple measurement nodes set on the conductive film allow the resistance measurement circuit to detect the resistance value of the conductive film between each pair of adjacent measurement nodes, thereby obtaining the thickness of each segment of the conductive film. Based on the thickness values ​​of each segment, the uniformity of the conductive film in the pulsed space electric thruster is then determined. It is easy to understand that the lengths of the conductive film segments may differ; the positions of multiple measurement nodes can be determined first, then the resistance value range corresponding to the set thickness range of each segment of the conductive film can be determined, thus determining the suitable resistance value range for each segment. Subsequently, the detected resistance values ​​of each segment of the conductive film are compared with the resistance value range of that segment to determine whether the thickness of the corresponding segment is within the set thickness range. For example, the suitable resistance value range for each segment of the conductive film can be determined experimentally. The conductive detection line is essentially a wire, providing an electrical channel for the resistance measurement circuit and the high-voltage pulse unit 40 to connect to the measurement nodes. It should be explained that the resistance measurement circuit for detecting the resistance value of the conductive film is time-division multiplexed with the high-voltage pulse output from the high-voltage pulse unit 40. The resistance measurement circuit can obtain the resistance value of the conductive film between adjacent measurement nodes by applying a given voltage value to adjacent measurement nodes and collecting relevant current values.

[0048] The control module 20 is used to determine whether the resistance value of the conductive film between the multiple adjacent measurement nodes conforms to a preset resistance value range based on the resistance value between the multiple adjacent measurement nodes.

[0049] In the first example, the distance between adjacent measurement nodes is equal.

[0050] It is easy to understand that the distance between two measurement nodes also affects the resistance value of the conductive film between the measurement nodes, thereby changing the corresponding thickness value. Therefore, in this example, the distance between adjacent measurement nodes is equal to ensure that the distance between each measurement node does not affect the obtained resistance value of the conductive film; in addition, the equal distance between adjacent measurement nodes and the uniform distribution of multiple measurement nodes on the conductive film enable uniform detection of each segment of the conductive film.

[0051] In the second example, the preset resistance range between two adjacent measurement nodes is set to 20Ω-1MΩ. When the resistance between adjacent measurement nodes is less than 20Ω, a high-voltage pulse is input from the high-voltage pulse module to the conductive film between the corresponding detection lines to reduce the conductive film and thus increase the resistance value. When the resistance between all adjacent measurement nodes is greater than 1MΩ, the output power of the power output unit 30 should be increased to increase the thickness of the conductive film.

[0052] In the third embodiment, the high-voltage pulse unit 40 is electrically connected to the plurality of conductive detection lines respectively; The control module 20 is further configured to output a corresponding first power command to the high-voltage pulse unit 40 when it is determined, based on the preset resistance range and the resistance value between two adjacent measurement nodes, that the resistance value of the conductive film between the two adjacent measurement nodes is less than the set lower limit resistance value. The high-voltage pulse unit 40 is used to output a high-voltage pulse corresponding to the first power command by connecting the conductive detection lines of the two corresponding measurement nodes after receiving the first power command.

[0053] It is readily understood that the resistance measurement circuit connects multiple measurement nodes, enabling the acquisition of the resistance value between any two selected measurement nodes, specifically the resistance value between every two adjacent measurement nodes. Correspondingly, the high-voltage pulse unit 40 is electrically connected to each of the measurement nodes. When the resistance value of the conductive film obtained by the resistance measurement circuit is less than the set lower limit resistance value, the control module 20 outputs a corresponding first power command to the high-voltage pulse unit 40. The high-voltage pulse unit 40 outputs a high-voltage pulse corresponding to the first power command through the conductive detection lines connecting the two selected measurement nodes.

[0054] It should be explained that during the resistance measurement process and the power output process, the two measurement nodes connected to the resistance measurement circuit and the two measurement nodes used by the high-voltage pulse unit 40 are the same measurement nodes; that is, the resistance measurement circuit obtains the resistance value of the conductive film between two specific measurement nodes, and after processing, the high-voltage pulse unit 40 outputs the corresponding high-voltage pulse through the two measurement nodes to reduce the thickness of the conductive film between the two measurement nodes.

[0055] It should be noted that the measurement nodes selected by the resistance measurement circuit are the same as those used by the high-voltage pulse unit 40. In this example, the resistance measurement circuit can arbitrarily select two measurement nodes, and the high-voltage pulse unit 40 outputs corresponding high-voltage pulses through these two measurement nodes. However, to maintain the uniformity of the conductive film, the resistance measurement circuit selects two adjacent measurement nodes.

[0056] This embodiment employs a method of releasing high-voltage pulses onto a segment of conductive film (the smallest controllable segment of conductive film) formed by adjacent measurement nodes to precisely reduce the thickness of the conductive film and maintain its uniformity. Furthermore, when the resistance value of the conductive film exceeds a set upper limit, the control module 20 can calculate the difference between the resistance value and the set upper limit, and output a first power command based on the difference. The larger the difference, the greater the pulse duration or amplitude in the first power command, and the greater the increase in conductive film thickness, thereby achieving rapid reduction of the conductive film thickness.

[0057] This invention also proposes a method for adjusting a conductive thin film, wherein the method is applied to the control module 20 of the conductive thin film adjustment system; such as Figure 3 As shown, the conductive thin film conditioning method includes: Step S10: Obtain the resistance value of the conductive film on the surface of the insulator between the cathode and anode of the pulsed space electric thruster; Step S20: Compare the resistance value of the conductive film with a preset resistance value range; Step S30: When the resistance value of the conductive film is less than the set lower limit resistance value, output a high voltage pulse to the conductive film; Alternatively, when the resistance of the conductive film exceeds a set upper limit, a larger power discharge is performed on the cathode and anode of the pulsed space electric thruster through the power processing unit to increase the deposition of the conductive film.

[0058] It should be noted that the output terminals of the power processing unit are respectively connected to the cathode and anode of the pulsed space electric thruster; the control module 20 outputs different power commands based on the comparison result of the resistance value of the conductive film with the preset resistance value range. When the resistance value of the conductive film is less than the set lower limit resistance value (i.e., less than the preset resistance value range), the high-voltage pulse unit 40 is controlled to output a high-voltage pulse to reduce the thickness of the conductive film; when the resistance value of the conductive film is greater than the set upper limit resistance value (greater than the preset resistance value range), the power output unit 30 is controlled to output electrical power to increase the thickness of the conductive film; wherein, under different comparison results, the output voltage amplitude and duration of the power output unit 30 are different, which can be determined by the control strategy set by the R&D personnel in the control module 20.

[0059] It is particularly important to note that the discharge voltage between the cathode and anode needs to be greater than the breakdown voltage threshold (which is determined by the thickness of the conductive film) to achieve a larger power discharge and increase the deposition (thickness) of the conductive film.

[0060] In one example, multiple measurement nodes are provided on the surface of the conductive thin film; The method of obtaining the resistance value of the conductive thin film on the surface of the insulator between the cathode and anode of the pulsed space electric thruster includes: The resistance value between each pair of adjacent measurement nodes is detected by setting multiple measurement nodes on the conductive film.

[0061] Specifically, the high-voltage pulse unit 40 is electrically connected to multiple measurement nodes. By acquiring the resistance value between each pair of adjacent measurement nodes, it is determined whether the thickness of the conductive film between each pair of adjacent measurement nodes meets the requirements, and actions are taken to adjust the resistance value (thickness of the conductive film) between the adjacent measurement nodes to achieve dynamic impedance tracking and keep the resistance value of the conductive film within a preset resistance value range. Step S40: If the resistance value between any two adjacent measurement nodes is greater than the preset resistance value range, a large-power discharge is performed on the cathode and anode of the pulsed space electric thruster until the resistance value between all pairs of adjacent measurement nodes is less than the preset maximum resistance value.

[0062] Step S50: If the resistance value between any two adjacent measurement nodes is less than a preset resistance value range, a high-voltage pulse is output through the two adjacent measurement nodes until the resistance value between the two adjacent measurement nodes falls within the preset resistance value range. It should be noted that if the resistance value between all two adjacent measurement nodes is greater than the preset resistance value range, it indicates that the overall thickness of the conductive film is too small (too thin), posing a risk of short circuit, and the thickness needs to be increased.

[0063] Step S60: If there are multiple adjacent measurement nodes with resistance values ​​less than a preset resistance value range, high-voltage pulses are sequentially output to the conductive film through multiple adjacent measurement nodes until the resistance values ​​between the adjacent measurement nodes are within the preset resistance value range.

[0064] It should be clarified that when the resistance value between multiple adjacent measurement nodes is less than a preset resistance value range, the resistance value between the adjacent measurement nodes can be adjusted to the preset resistance value range by passing through the multiple adjacent measurement nodes in any order. Specifically, the control module 20 outputs a second power command to the high-voltage pulse module in sequence according to the resistance value between the multiple adjacent measurement nodes, and discharges through the corresponding adjacent measurement nodes in sequence to reduce the thickness of the conductive film. In particular, the high-voltage pulse module can be controlled to output power signals through the multiple adjacent measurement nodes in a clockwise or counterclockwise order.

[0065] Step S70: When the resistance value between two adjacent measurement nodes of the conductive film is within the preset resistance value range, normal discharge is performed through the cathode and anode of the pulsed space electric thruster.

[0066] To achieve stable and repeatable discharge breakdown and extend the thruster's lifespan, the discharge voltage values ​​for the cathode and anode of the pulsed space electric thruster can be determined based on the resistance value of the conductive film. It is necessary to establish the relationship between the conductive film resistance value and the discharge voltage value. For example, a mapping table of conductive film resistance value and discharge voltage value can be established in advance through experiments. Then, based on the resistance value of the conductive film, the discharge voltage values ​​for the power processing unit to discharge to the cathode and anode of the pulsed space electric thruster can be adjusted. Alternatively, a three-dimensional correlation model of film thickness, impedance characteristics, and output power can be established. The resistance value of the conductive film can be input into the model to obtain the corresponding discharge voltage value, and the power processing unit can then output the discharge voltage value to the cathode and anode of the pulsed space electric thruster.

[0067] In one example, the conductive film adjustment method further includes: adjusting the discharge voltage value of the power processing unit discharging to the cathode and anode of the pulsed space electric thruster based on the resistance value of the conductive film. This example achieves adaptive voltage control of the power processing unit's output voltage value based on the resistance value of the conductive film.

[0068] This invention also proposes a pulsed space electric thruster, which includes the conductive thin-film adjustment system. The specific structure of this conductive thin-film adjustment system is as described in the above embodiments. Since this pulsed space electric thruster adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, and will not be elaborated further here. The above descriptions are merely optional embodiments of this invention and do not limit the patent scope of this invention. Any equivalent structural transformations made under the inventive concept of this invention using the description and drawings of this invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this invention.

Claims

1. A conductive thin film conditioning system, characterized in that, Applied to pulsed space electric thrusters, wherein a conductive thin film exists on the surface of the insulator between the cathode and anode of the pulsed space electric thruster; The conductive thin film conditioning system includes: a resistance measurement module, a control module, a power processing unit, and a high-voltage pulse unit; The control module is connected to the resistance measurement module, the power processing unit, and the high-voltage pulse unit respectively; the resistance measurement module is electrically connected to the conductive film, the high-voltage pulse unit is electrically connected to the conductive film, and the power processing unit is electrically connected to the cathode and the anode. The resistance measurement module is connected to the control module and is used to detect the resistance value of the conductive film and output it to the control module; the control module is used to determine whether the thickness of the conductive film is within a set thickness range based on the comparison result between the resistance value of the conductive film and a preset resistance value range. The control module is used to output a first power command to the high-voltage pulse unit when the resistance value of the conductive film is less than a set lower limit resistance value; when the high-voltage pulse unit receives the first power command, it outputs a high-voltage pulse corresponding to the first power command, and the high-voltage pulse is used to ablate the conductive film; The control module is further configured to output a second power command to the power processing unit when the resistance value of the conductive thin film is greater than a set upper limit resistance value; the power processing unit is configured to output a discharge power corresponding to the second power command through the cathode and the anode when receiving the second power command, thereby increasing the thin film deposition.

2. The conductive thin film conditioning system as described in claim 1, characterized in that, The resistance measurement module includes: a resistance measurement circuit and multiple conductive detection lines; The multiple conductive detection lines are connected one-to-one to multiple measurement nodes on the conductive film. The input terminal of the resistance measurement circuit is connected to the plurality of conductive detection lines, and the output terminal is connected to the control module. The resistance measurement circuit is used to detect the resistance value between each pair of adjacent measurement nodes and output it to the control module. The control module is used to determine whether the resistance value of the conductive film between the multiple adjacent measurement nodes conforms to a preset resistance value range based on the resistance value between the multiple adjacent measurement nodes.

3. The conductive thin film monitoring system as described in claim 2, characterized in that, The distance between adjacent measurement nodes is equal.

4. The conductive thin film conditioning system as described in claim 2, characterized in that, The high-voltage pulse unit is electrically connected to the plurality of conductive detection lines respectively; The control module is also used to output a corresponding first power command to the high-voltage pulse unit when it is determined, based on the preset resistance range and the resistance value between two adjacent measurement nodes, that the resistance value of the conductive film between the two adjacent measurement nodes is less than the set lower limit resistance value. The high-voltage pulse unit is used to output a high-voltage pulse corresponding to the first power command by connecting the conductive detection lines of the two corresponding measurement nodes after receiving the first power command.

5. The conductive thin film conditioning system according to any one of claims 1 to 4, characterized in that, The preset resistance value ranges from 20Ω to 1MΩ.

6. A method for adjusting a conductive thin film, characterized in that, The conductive thin film conditioning method is applied to the control module of the conductive thin film conditioning system as described in any one of claims 1 to 5; The conductive thin film conditioning method includes: Obtain the resistance value of the conductive film on the surface of the insulator between the cathode and anode of a pulsed space electric thruster; Compare the resistance value of the conductive film with a preset resistance value range; When the resistance of the conductive film is less than the set lower limit resistance value, a high voltage pulse is output to the conductive film; Alternatively, when the resistance of the conductive film exceeds a set upper limit, a larger power discharge is performed on the cathode and anode of the pulsed space electric thruster through the power processing unit to increase the deposition of the conductive film.

7. The conductive thin film conditioning method as described in claim 6, characterized in that, Multiple measurement nodes are set on the surface of the conductive thin film; The method of obtaining the resistance value of the conductive thin film on the surface of the insulator between the cathode and anode of the pulsed space electric thruster includes: The resistance value between each pair of adjacent measurement nodes is detected by setting multiple measurement nodes on the conductive film.

8. The conductive thin film conditioning method as described in claim 7, characterized in that, If the resistance value between two adjacent measurement nodes is greater than the preset resistance value range, a large power discharge is performed on the cathode and anode of the pulsed space electric thruster until the resistance value between all two adjacent measurement nodes is less than the preset maximum resistance value. If the resistance value between two adjacent measuring nodes is less than the preset resistance value range, a high voltage pulse is output through the two adjacent measuring nodes until the resistance value between the two adjacent measuring nodes is within the preset resistance value range. If the resistance value between multiple adjacent measurement nodes is less than the preset resistance value range, a high voltage pulse is output to the conductive film through multiple adjacent measurement nodes in sequence until the resistance value between the adjacent measurement nodes is within the preset resistance value range. When the resistance value between two adjacent measurement nodes of the conductive film is within the preset resistance value range, normal discharge is carried out through the cathode and anode of the pulsed space electric thruster.

9. The conductive thin film conditioning method as described in claim 6, characterized in that, Based on the resistance value of the conductive film, the discharge voltage value for the power processing unit to discharge to the cathode and anode of the pulsed space electric thruster is adjusted.

10. A pulsed space electric thruster, characterized in that, The pulsed space electric thruster includes the conductive thin film conditioning system as described in any one of claims 1 to 5.

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