Manufacturing method of metal mask plate and metal mask plate

Abstract

The invention discloses a manufacturing method of a metal mask plate and the metal mask plate, and relates to the technical field of metal material preparation, and the manufacturing method comprises the following steps: etching a test strip to which initial tension is applied by using an etching solution to form a plurality of etching holes, the test strip comprises a test metal substrate and a test mask pattern layer formed on the test metal substrate, the test mask pattern layer comprises a plurality of through holes, and the plurality of through holes are in one-to-one correspondence with the plurality of etching holes; detecting the key size of the etching hole formed in the test metal substrate; the key size is compared with a design size, etching parameters are determined, and the etching parameters are related to production tension applied to strip production; and etching the production strip according to the etching parameters. The problems that a metal mask plate processing technology is poor in stability and low in yield are solved.

Description

Technical Field

[0001] This invention relates to the field of metal material preparation technology, specifically to a method for manufacturing a metal mask and the metal mask itself. Background Technology

[0002] Currently, in the roll-to-roll manufacturing process of Fine Metal Mask (FMM), the etching process is prone to deviations in the critical dimensions of the etched holes, which in turn affects the processing effect of subsequent key processes and ultimately leads to quality defects in the final product. Summary of the Invention

[0003] The present invention aims to address, to a certain extent, one of the technical problems in related technologies. To this end, the present invention provides a method for manufacturing a metal mask and a metal mask itself.

[0004] To achieve the above objectives, a first aspect of the present invention provides a method for manufacturing a metal mask, comprising the following steps: A test strip with initial tension is etched using an etching solution to form multiple etched holes. The test strip includes a test metal substrate and a test mask pattern layer formed on the test metal substrate. The test mask pattern layer includes multiple through holes, and the multiple through holes correspond one-to-one with the multiple etched holes. The critical dimensions of the etched holes formed on the test metal substrate were detected. The critical dimensions are compared with the design dimensions to determine the etching parameters, wherein the etching parameters are related to the production tension applied to the production strip; The production strip is etched according to the etching parameters.

[0005] Optionally, the test strip is disposed between the unwinding mechanism and the winding mechanism, and a liquid pool for storing the etching solution is provided between the unwinding mechanism and the winding mechanism; at least one tension adjusting roller is respectively provided between the liquid pool and the unwinding mechanism, and between the liquid pool and the winding mechanism, and the test strip passes through the liquid pool and each of the tension adjusting rollers; in the step of etching the test strip with initial tension applied using the etching solution, initial tension parameters are configured for the unwinding mechanism, the winding mechanism, and each of the tension adjusting rollers to apply initial tension to the test strip; The etching parameters include production tension parameters configured for the unwinding mechanism, the winding mechanism, and each of the tension regulating rollers; in the step of etching the production strip according to the etching parameters, the production strip is disposed between the unwinding mechanism and the winding mechanism, and the production strip passes through the liquid pool and each of the tension regulating rollers.

[0006] Optionally, in the step of configuring initial tension parameters for the unwinding mechanism, the winding mechanism, and each of the tension adjusting rollers, the initial tension parameter of the unwinding mechanism is configured to be 30~60N, the initial tension parameter of each of the tension adjusting rollers is configured to be 40~80N, and the initial tension parameter of the winding mechanism is configured to be 20~50N.

[0007] Optionally, comparing the critical dimension with the design dimension to determine the etching parameters includes: If the absolute difference between the critical dimension and the design dimension is greater than a preset threshold, the initial tension parameter is compensated to obtain the corrected production tension parameter.

[0008] Optionally, the compensation for the initial tension parameter when the absolute difference between the critical dimension and the design dimension is greater than a preset threshold includes: When the critical dimension is smaller than the design dimension, the production tension parameter satisfies formula (1):

[0009] When the critical dimension is larger than the design dimension, the production tension parameter satisfies formula (2):

[0010] in, The production tension parameter is... The initial tension parameter is... The first compensation coefficient is, and ; This is the second compensation coefficient, and ; The etching solution compensation coefficient is given by the following formula (3):

[0011] in, The calibration coefficients are, and C is the concentration of the etching solution.

[0012] Optionally, comparing the critical dimension with the design dimension to determine the etching parameters further includes: If the absolute difference between the critical dimension and the design dimension is less than or equal to the preset threshold, the initial tension parameter is determined as the production tension parameter. Optionally, the preset threshold satisfies the following relationship:

[0013] in, The preset threshold is defined as follows.

[0014] Optionally, with the length direction of the test metal substrate as the x-axis direction and the width direction of the test metal substrate as the y-axis direction, in the step of detecting the critical dimension of the etched hole formed on the test metal substrate, the critical dimension satisfies formula (4):

[0015] in, This refers to the critical dimensions of the etched hole. Let be the diameter of the opening of the etched hole in the x-axis direction. Let be the diameter of the etched hole along the y-axis, 'a' be the first coefficient, and 'b' be the second coefficient. The value of 'a' is greater than the value of 'b', and the sum of 'a' and 'b' is 1.

[0016] Optionally, the value of 'a' ranges from 0.6 to 0.8, and the value of 'b' ranges from 0.2 to 0.4.

[0017] A second aspect of the present invention provides a metal mask plate manufactured by the manufacturing method provided in the first aspect of the present invention.

[0018] In related technologies, etching processes, due to the gravitational effect of the solution, accumulate on the material surface, causing localized depressions, affecting tension uniformity, and weakening the solution exchange process. This, in turn, affects the processing effect of subsequent key processes, ultimately leading to quality defects in the final product. This invention first addresses this issue by using initial tension... The test strip is etched; if the critical dimension of the etched hole on the test strip deviates from the design dimension beyond a preset threshold, the relationship between the critical dimension and the design dimension, as well as the tension compensation coefficient, must be considered simultaneously. , and etching solution compensation coefficient This is to correct the production tension used in manufacturing. In the etching process of metal masks, the deviation in the critical dimensions of the etched holes is essentially due to a mismatch between the fluid exchange rate and the etching rate, and the pooling effect is the core mechanism for adjusting this mismatch. The pooling effect refers to the localized fluid retention area (similar to a miniature pool) formed at the contact surface between the strip and the etching solution due to insufficient strip flatness or low tension. Its core function is to slow down the exchange rate of old and new etching solution, thereby reducing the local etching rate.

[0019] When the critical dimension of the etched hole on the test strip deviates from the design dimension beyond a preset threshold, and the critical dimension is greater than the design dimension (over-etching), it indicates that the fluid exchange is too rapid. Fresh etchant continuously and rapidly enters the micropores, while corrosion products are promptly discharged, resulting in an etching rate far exceeding the design expectation and excessive corrosion of the hole walls. A slight pooling effect should be used to mitigate the etching rate, i.e., reducing production tension to moderately decrease the surface flatness of the strip, creating localized fluid retention, slowing down the etchant turnover rate, and avoiding over-etching.

[0020] When the critical dimension of the etched via on the test strip deviates from the design dimension by more than a preset threshold, and the critical dimension is less than the design dimension (insufficient etching), it indicates insufficient fluid exchange, accumulation of corrosion products within the micropores, difficulty in penetration of fresh etchant, a lower-than-expected etching rate, and inadequate etching of the via walls. To address this, it is necessary to reduce the pooling effect and accelerate the etching rate, i.e., increase production tension, improve the surface flatness of the strip, eliminate localized fluid stagnation, promote the exchange of old and new etchant, and improve etching sufficiency.

[0021] Furthermore, it can be seen from formulas (1)-(3) that, regardless of the above situation, as the etching solution concentration C increases, the etching solution compensation coefficient... Reduce, thereby reducing the production tension parameters of the production strip. Decrease; conversely, decrease the etching solution concentration C, and decrease the etching solution compensation coefficient. Increase, thereby producing tension parameters Increase. When the etchant concentration is too low, the tension needs to be increased to compensate for insufficient fluid turnover; when the etchant concentration is too high, the tension needs to be decreased to avoid over-etching. The two form a negative correlation regulatory relationship.

[0022] This invention enables more precise matching of the tension of the strip during the etching process with the material properties and pattern requirements, effectively reducing the deviations in aperture, shape, and spacing of the etched holes, and significantly improving the pattern accuracy of the metal mask. Multiple tension adjusting rollers are added to the etching equipment. These rollers, together with the unwinding and rewinding mechanisms, form a tension control system, ensuring stable tension and no surface depressions on the material during the wet etching process, which is more conducive to solution exchange during wet etching. Through tension control in the wet process, the product's TP-X accuracy is ≤±15μm, and TP-Y accuracy is ≤±2.5μm (TP, total pitch), fully meeting the processing requirements of high-precision metal masks for display panels and solving the industry pain point of excessive accuracy fluctuations (typically ±20~30μm) under traditional tension control methods.

[0023] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and accompanying drawings. The preferred embodiments or means of the present invention will be shown in detail in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. In addition, each of these features, elements and components appearing in the following text and drawings is a plurality of, and different symbols or numbers are used for convenience of representation, but all represent parts with the same or similar construction or function. Attached Figure Description

[0024] The present invention will be further described below with reference to the accompanying drawings: Figure 1 This is a flowchart of the manufacturing method of the present invention.

[0025] Figure 2 This is a schematic diagram of the etching equipment of the present invention.

[0026] Figure 3 This is a yield chart of the metal mask produced by this invention.

[0027] Among them, 10 is the unwinding mechanism; 20 is the winding mechanism; 31 is the liquid pool; 32 is the washing unit; 33 is the air drying unit; and 40 is the tension adjusting roller. Detailed Implementation

[0028] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described are intended to explain the present invention and should not be construed as limiting the invention.

[0029] The terms "an embodiment," "example," or "trademark" used in this specification refer to a particular feature, structure, or characteristic described in connection with the embodiment itself that may be included in at least one embodiment disclosed in this patent. The phrase "in an embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment.

[0030] In related technologies, during the fabrication of Fine Metal Mask (FMM) roll-to-roll processes, the etching process accumulates on the material surface due to the gravity of the solution, causing local depressions. This affects the uniformity of tension and weakens the solution exchange process, which in turn affects the processing effect of subsequent key processes, ultimately leading to quality defects in the final product.

[0031] In view of this, refer to the appendix Figure 1 The first aspect of the present invention provides a method for manufacturing a metal mask, comprising the following steps: S100, using an etching solution to etch a test strip with an initial tension applied to form multiple etch holes, wherein the test strip includes a test metal substrate and a test mask pattern layer formed on the test metal substrate, the test mask pattern layer includes multiple through holes, and the multiple through holes correspond one-to-one with the multiple etch holes; S110, Detect the critical dimensions of the etched holes formed on the test metal substrate; S120, compare the critical dimension with the design dimension to determine the etching parameters, wherein the etching parameters are related to the production tension applied to the production strip; S130, the production strip is etched according to the etching parameters.

[0032] Specifically, the test strip is disposed between the unwinding mechanism and the winding mechanism, and a liquid pool for storing the etching solution is disposed between the unwinding mechanism and the winding mechanism; at least one tension adjusting roller is disposed between the liquid pool and the unwinding mechanism, and between the liquid pool and the winding mechanism, and the test strip passes through each of the tension adjusting rollers; in the step of etching the test strip with initial tension applied using the etching solution, initial tension parameters are configured for the unwinding mechanism, the winding mechanism, and each tension adjusting roller to apply initial tension to the test strip; The etching parameters include production tension parameters configured for the unwinding mechanism, the winding mechanism, and the tension adjusting roller; the production strip is disposed between the unwinding mechanism and the winding mechanism, and a liquid pool for storing the etching solution is disposed between the unwinding mechanism and the winding mechanism; at least one tension adjusting roller is disposed between the liquid pool and the unwinding mechanism, and between the liquid pool and the winding mechanism, and the production strip passes through each of the tension adjusting rollers.

[0033] In some embodiments, in the step of configuring initial tension parameters for the unwinding mechanism, the winding mechanism, and each tension adjusting roller, the initial tension parameter of the unwinding mechanism is configured to be 30~60N, two tension adjusting rollers are provided, the initial tension parameters of the two tension adjusting rollers are configured to be 40~80N respectively, and the initial tension parameter of the winding mechanism is configured to be 20~50N.

[0034] In step S120, comparing the critical dimension with the design dimension to determine the etching parameters includes: Step S121: If the absolute difference between the critical dimension and the design dimension is greater than a preset threshold, the initial tension parameter is compensated to obtain the corrected production tension parameter.

[0035] Specifically, when the absolute difference between the critical dimension and the design dimension is greater than a preset threshold, compensating for the initial tension parameter includes: When the critical dimension is smaller than the design dimension, the production tension parameter satisfies formula (1):

[0036] When the critical dimension is larger than the design dimension, the production tension parameter satisfies formula (2):

[0037] in, The production tension parameter is... The initial tension parameter is... The first compensation coefficient is, and ; This is the second compensation coefficient, and ; The etching solution compensation coefficient is given by the following formula (3):

[0038] in, The calibration coefficients are, and C is the concentration of the etching solution.

[0039] Specifically, during the etching process of a metal mask, the deviation in the critical dimensions of the etched holes is essentially due to a mismatch between the fluid exchange rate and the etching rate, and the pooling effect is the core mechanism for regulating this matching relationship. The pooling effect is defined as: a localized fluid retention area (similar to a miniature pool) formed at the contact surface between the strip and the etching solution due to insufficient strip flatness or low tension. Its core function is to slow down the exchange rate of old and new etching solution, thereby reducing the local etching rate.

[0040] When the critical dimension exceeds the design dimension (over-etching), the fluid exchange is too rapid. Fresh etchant continuously and quickly enters the micropores, while corrosion products are promptly discharged, resulting in an etching rate far exceeding design expectations and excessive corrosion of the hole walls. A slight pooling effect is needed to mitigate the etching rate, i.e., reduce production tension, moderately decrease the surface flatness of the strip, create localized fluid retention, slow down the etchant turnover rate, and avoid over-etching.

[0041] When the critical dimension is smaller than the design dimension (insufficient etching), insufficient fluid exchange leads to the accumulation of corrosion products within the micropores, making it difficult for fresh etchant to penetrate. This results in an etching rate lower than expected and incomplete etching of the hole walls. To address this, it is necessary to reduce the pooling effect and accelerate the etching rate, i.e., increase production tension, improve the surface smoothness of the strip, eliminate localized fluid stagnation, promote the exchange of old and new etchant, and improve the sufficiency of etching.

[0042] Furthermore, it can be seen from formulas (1)-(3) that, regardless of the above situation, as the etching solution concentration C increases, the etching solution compensation coefficient... Reduce, thereby reducing the production tension parameters of the production strip. Decrease; conversely, decrease the etching solution concentration C, and decrease the etching solution compensation coefficient. Increase, thereby producing tension parameters Increase. When the etchant concentration is too low, the tension needs to be increased to compensate for insufficient fluid turnover; when the etchant concentration is too high, the tension needs to be decreased to avoid over-etching. The two form a negative correlation regulatory relationship.

[0043] In step S120, comparing the critical dimension with the design dimension to determine the etching parameters further includes: Step S122: If the absolute difference between the critical dimension and the design dimension is less than or equal to the preset threshold, the initial tension parameter is determined as the production tension parameter. The preset threshold satisfies the following relationship:

[0044] in, The preset threshold is defined as follows.

[0045] In step S110, with the length direction of the test metal substrate as the x-axis direction and the width direction of the test metal substrate as the y-axis direction, in the step of detecting the critical dimension of the etched hole formed on the test metal substrate, the critical dimension satisfies formula (4):

[0046] in, For the aforementioned key dimensions, Let be the diameter of the opening of the etched hole in the x-axis direction. Let be the diameter of the etched hole along the y-axis, 'a' be the first coefficient, and 'b' be the second coefficient. The value of 'a' is greater than the value of 'b', and the sum of 'a' and 'b' is 1.

[0047] Wherein, the value of 'a' ranges from 0.6 to 0.8, and the value of 'b' ranges from 0.2 to 0.4. (Along the strip length direction, x-axis) is usually the main etching direction, which is most affected by the fluid flow renewal rate and tension stretching, and the etching rate is usually faster. Along the strip width direction (y-axis), the etching rate is relatively slow due to the effects of compression and pooling. By setting a>b, a higher weight is given to the direction with a faster etching rate. This allows the calculated comprehensive critical dimension CD to more accurately reflect the critical dimension compliance of the etched hole. If the hole is rhomboid, the dimensions of the opening at 45 degrees to the positive x-axis and the dimensions of the opening at 135 degrees to the positive x-axis can be taken.

[0048] In some embodiments, refer to Figure 2 The unwinding mechanism 10 is located at the feed end of the entire etching process equipment and is used to carry the test strip or production strip to be etched (hereinafter collectively referred to as strip). It integrates a tension drive module, which can provide a stable unwinding tension to the strip according to the preset initial tension parameters (30~60N) and the determined production tension, so as to avoid loosening or stretching deformation of the strip during the unwinding process. The output end of the unwinding mechanism 10 is correspondingly set with the tension adjusting roller 40. After the strip is drawn out from the unwinding mechanism 10, it is directly wound around the first tension adjusting roller 40 (i.e., the inlet tension adjusting roller). There are two sets of tension adjusting rollers 40, which are defined as the inlet tension adjusting roller and the outlet tension adjusting roller, respectively. The inlet tension adjusting roller is set between the unwinding mechanism 10 and the liquid pool 31. Downstream of the liquid pool 31, a washing unit 32 and an air drying unit 33 are also set. The outlet tension adjusting roller is set between the air drying unit 33 and the winding mechanism 20. The axes of the two sets of rollers are parallel to the width direction of the strip to ensure that the force on the strip is evenly distributed along the width direction. Each set of tension regulating rollers 40 integrates a tension detection module and a dynamic adjustment module.

[0049] The liquid tank 31 is used to store etching solution of a preset concentration. The internal dimensions of the liquid tank 31 are adapted to the width of the strip to ensure that the strip is immersed in the etching solution. The water washing unit 32 is located downstream of the liquid tank 31 and is used to clean the etched strip immediately to remove residual etching solution and corrosion products from the surface, preventing the residual etching solution from continuing to corrode the strip and causing the CD deviation of the etched holes to exceed the limit. The water washing unit 32 adopts a deionized water spray design, and the spray pressure is adapted to the strip tension to prevent high-pressure spray from damaging the flatness of the strip. The air drying unit 33 is located downstream of the water washing unit 32 and uses hot air drying to quickly dry the cleaned strip, preventing residual moisture on the strip surface from causing oxidation or sticking during winding, and ensuring the subsequent winding quality and CD dimension stability.

[0050] The winding mechanism 20 is located at the discharge end of the equipment, and the outlet tension adjusting roller is located between the drying unit 33 and the winding mechanism 20. The winding mechanism 20 corresponds to the outlet tension adjusting roller and is used to wind up the strip after etching, washing, and drying. The winding mechanism 20 also integrates a tension drive module, whose preset initial tension parameter is 20~50N.

[0051] A second aspect of the present invention provides a metal mask plate manufactured by the manufacturing method provided in the first aspect of the present invention.

[0052] As shown in Table 1 and Figure 3 As shown, the metal mask fabricated using the method of this invention, after sample testing, demonstrated an average yield of 93.11%, proving that the etched holes on the product surface had no obvious appearance defects (burrs, residues, distortion, etc.). The yield stability across different batches and sample sizes proves that the product can be mass-produced with minimal quality fluctuations during mass production, reducing procurement risks for downstream customers. The yield data covering different production batches indicates that the product fabrication method has strong tolerance to changes in etching solution concentration and batch differences in strip material, and that product quality is not affected by minor process fluctuations, making it more practical.

[0053] Table 1. Product Appearance Yield Statistics

[0054] Table 2 shows the actual TP (total pitch) data for the product. Six holes are divided into three groups, each group containing two holes spaced along the x-axis, and the three groups are spaced along the y-axis. The designed spacing between two holes in each group is 816 mm. The actual spacing between the two holes in each group is compared with this designed value, and the resulting deviations are X1, X2, and X3. Alternatively, 30 holes are divided into 15 groups, each group containing two holes spaced along the y-axis, and the 15 groups are spaced along the x-axis. The designed spacing between two holes in each group is 70 mm. The actual spacing between the two holes in each group is compared with this designed value, and the resulting deviations are Y1, Y2, Y3…15. From the data in the table, it can be seen that both TP-X (accuracy requirement ≤ ±15 μm) and TP-Y (accuracy requirement ≤ ±2.5 μm) of the product meet customer requirements.

[0055] Table 2 Actual TP Data of Products (Unit: μm)

[0056] Continued from Table 2 - Actual Product TP Data Table

[0057] As shown in Table 3, the critical dimensions (CD) of the product (accuracy requirement ≤ ±2μm) all meet customer requirements. The appearance yield is directly related to the control accuracy of the critical dimensions. The high yield in Table 1 (93.11%) is strongly correlated with the CD accuracy (≤ ±2μm) in Table 3. The CD accuracy of this invention is controlled within ±2μm. The closed-loop control of this solution perfectly matches the design expectations. The etching rate and liquid exchange rate are precisely balanced, avoiding both over-etching leading to hole shape distortion and edge burrs (appearance defects) and under-etching leading to hole wall residue and hole blockage (appearance defects). This directly reduces size-related appearance defects by more than 80%.

[0058] Table 3. Actual CD Data of Products (Unit: μm)

[0059] Continued from Table 3: Actual CD Data Table for Products

[0060] Continued from Table 3: Actual CD Data Table for Products

[0061] Continued from Table 3: Actual CD Data Table for Products

[0062] Wherein, CD-X represents the difference between the actual size of the opening in the x-axis direction and the target value, and CD-Y represents the difference between the actual size of the opening in the y-axis direction and the target value. This invention enables the tension of the strip during the etching process to more accurately match the material properties and pattern requirements, effectively reducing the deviations in aperture, shape, and spacing of the etched holes, and significantly improving the pattern accuracy of the metal mask. Multiple tension adjusting rollers are added, and these rollers, together with the unwinding and rewinding mechanisms, form a tension control system, ensuring stable tension and no depressions on the material surface during the wet etching process, which is more conducive to solution exchange in wet etching. It should be noted that the calibration coefficients in this invention are constants obtained through pre-calibration via experiments. The calibration method involves using a metal substrate of fixed material and thickness, a fixed type of etching solution, and, under standard etching conditions, fitting the etching solution concentration C and the etching solution compensation coefficient through multiple sets of concentration gradient experiments. The correspondence is used to calculate the calibration coefficients that satisfy formula (3). Calibration coefficient The range of values ​​is .

[0063] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes, but is not limited to, the contents described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of the present invention will be included within the scope of the claims.

Claims

1. A method for manufacturing a metal photomask, characterized in that, Includes the following steps: A test strip with initial tension is etched using an etching solution to form multiple etched holes. The test strip includes a test metal substrate and a test mask pattern layer formed on the test metal substrate. The test mask pattern layer includes multiple through holes, and the multiple through holes correspond one-to-one with the multiple etched holes. The critical dimensions of the etched holes formed on the test metal substrate were detected. The critical dimensions are compared with the design dimensions to determine the etching parameters, wherein the etching parameters are related to the production tension applied to the production strip; The production strip is etched according to the etching parameters.

2. The method for manufacturing a metal mask according to claim 1, characterized in that, The test strip is disposed between the unwinding mechanism and the winding mechanism, and a liquid pool for storing the etching solution is provided between the unwinding mechanism and the winding mechanism. At least one tension adjusting roller is provided between the liquid pool and the unwinding mechanism, and between the liquid pool and the winding mechanism, respectively. The test strip passes through the liquid pool and each of the tension adjusting rollers. In the step of etching the test strip with initial tension applied using the etching solution, initial tension parameters are configured for the unwinding mechanism, the winding mechanism, and each of the tension adjusting rollers to apply initial tension to the test strip. The etching parameters include production tension parameters configured for the unwinding mechanism, the winding mechanism, and each of the tension regulating rollers; in the step of etching the production strip according to the etching parameters, the production strip is disposed between the unwinding mechanism and the winding mechanism, and the production strip passes through the liquid pool and each of the tension regulating rollers.

3. The method for manufacturing a metal mask according to claim 2, characterized in that, In the step of configuring the initial tension parameters for the unwinding mechanism, the winding mechanism, and each of the tension adjusting rollers, the initial tension parameter of the unwinding mechanism is configured to be 30~60N, the initial tension parameter of each of the tension adjusting rollers is configured to be 40~80N, and the initial tension parameter of the winding mechanism is configured to be 20~50N.

4. The method for manufacturing a metal mask according to claim 2 or 3, characterized in that, The step of comparing the critical dimension with the design dimension to determine the etching parameters includes: If the absolute difference between the critical dimension and the design dimension is greater than a preset threshold, the initial tension parameter is compensated to obtain the corrected production tension parameter.

5. The method for manufacturing a metal mask according to claim 4, characterized in that, When the absolute difference between the critical dimension and the design dimension is greater than a preset threshold, the initial tension parameter is compensated, including: When the critical dimension is smaller than the design dimension, the production tension parameter satisfies formula (1): When the critical dimension is larger than the design dimension, the production tension parameter satisfies formula (2): in, The production tension parameter is... The initial tension parameter is... The first compensation coefficient is, and ; This is the second compensation coefficient, and ; The etching solution compensation coefficient is given by the following formula (3): in, The calibration coefficients are, and C is the concentration of the etching solution.

6. The method for manufacturing a metal mask according to claim 4, characterized in that, The step of comparing the critical dimension with the design dimension to determine the etching parameters further includes: If the absolute difference between the critical dimension and the design dimension is less than or equal to the preset threshold, the initial tension parameter is determined as the production tension parameter.

7. The method for manufacturing a metal mask according to claim 6, characterized in that, The preset threshold satisfies the following relationship: in, The preset threshold is defined as follows.

8. The method for manufacturing a metal mask according to claim 4, characterized in that, With the length direction of the test metal substrate as the x-axis direction and the width direction of the test metal substrate as the y-axis direction, in the step of detecting the critical dimension of the etched hole formed on the test metal substrate, the critical dimension satisfies formula (4): in, This refers to the critical dimensions of the etched hole. Let be the diameter of the opening of the etched hole in the x-axis direction. Let be the diameter of the etched hole along the y-axis, 'a' be the first coefficient, and 'b' be the second coefficient. The value of 'a' is greater than the value of 'b', and the sum of 'a' and 'b' is 1.

9. The method for manufacturing a metal mask according to claim 8, characterized in that, The value of 'a' ranges from 0.6 to 0.8, and the value of 'b' ranges from 0.2 to 0.

4.

10. A metal mask, characterized in that, It is manufactured by the manufacturing method described in any one of claims 1-9.

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