Photomask pattern correction method and device, electronic equipment, storage medium and program product
By using OPC technology to design the mask-limited influence area in the mask pattern and perform optical proximity effect correction, the problems of mask limitation and contour convergence in mask pattern correction are solved, and effective correction of mask pattern and high-quality pattern transfer are achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHENGDU ZIGUANG SEMICON TECH CO LTD
- Filing Date
- 2024-11-04
- Publication Date
- 2026-05-08
AI Technical Summary
In the semiconductor manufacturing process, existing technologies struggle to simultaneously eliminate mask constraints and converge the pattern outline during mask pattern correction, leading to unstable mask quality.
By using the Optical Proximity Correction (OPC) technique, regions that affect the mask's constraints are designed, and optical proximity correction is performed to eliminate the pattern in the target region and generate a corrected mask pattern.
It achieves effective correction of the photomask pattern, eliminates photomask limitations, improves the contour convergence and roundness of the photomask pattern, and ensures that the pattern formed by the photomask on the semiconductor silicon wafer is close to the design pattern.
Smart Images
Figure CN121995688A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a method, apparatus, electronic device, storage medium, and program product for correcting photomask patterns. Background Technology
[0002] In the semiconductor manufacturing field, photomask technology is involved. Photomask technology uses photolithography to create patterns on semiconductors, similar to how a photographic image is transferred from a negative to a photograph. The photomask, through its function, copies the designed pattern onto the wafer. Therefore, a corresponding photomask pattern also needs to be designed on the photomask so that it can be copied onto the wafer using photolithography. Summary of the Invention
[0003] The purpose of this disclosure is to provide a method, apparatus, electronic device, storage medium, and program product for correcting photomask patterns, which can achieve effective correction of photomask patterns by eliminating photomask limitations.
[0004] To achieve the above objectives, in a first aspect, this disclosure provides a method for correcting a photomask pattern, comprising: obtaining an original photomask pattern, wherein the original photomask pattern includes a target region, the target region being a region that has an impact on the limitation of the photomask; performing optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, wherein in the corrected photomask pattern, the target region is a blank region excluding the pattern.
[0005] Optionally, the original photomask pattern includes a first pattern, a second pattern, and a third pattern, the target area includes a first target area and a second target area, a first blank area exists between the first pattern and the second pattern, a second blank area exists between the second pattern and the third pattern, the first target area is located in the first blank area, and the second target area is located in the second blank area.
[0006] Optionally, the corrected photomask pattern includes a corrected first pattern, a corrected second pattern, and a corrected third pattern. In the corrected photomask pattern, the first target area is the blank area between the corrected first pattern and the corrected second pattern that does not include the pattern, and the second target area is the blank area between the corrected second pattern and the corrected third pattern that does not include the pattern.
[0007] Optionally, the step of performing optical proximity correction on the original photomask pattern to obtain a corrected photomask pattern includes: calculating the light intensity of the region other than the target region in the original photomask pattern using a calculation model in the optical proximity correction platform to obtain light intensity distribution information; and performing optical proximity correction on the original photomask pattern based on the light intensity distribution information to obtain the corrected photomask pattern.
[0008] Optionally, the correction method further includes: configuring the light intensity calculation method corresponding to the calculation model, so that the calculation model performs light intensity calculation on the region other than the target region in the original photomask pattern based on the configured light intensity calculation method.
[0009] Optionally, the original photomask pattern is a pattern corresponding to a connection hole on the semiconductor interconnect layer. The correction method further includes: fabricating a photomask based on the corrected photomask pattern to obtain a photomask, the photomask including a pattern for forming the connection hole; transferring the pattern for forming the connection hole onto the interconnect layer; forming the connection hole on the interconnect layer based on the photomask pattern transferred onto the interconnect layer, the roundness of the connection hole being higher than a preset roundness.
[0010] Secondly, this disclosure provides a device for correcting a photomask pattern, comprising: an acquisition module for acquiring an original photomask pattern, wherein the original photomask pattern includes a target region, the target region being a region where a photomask constraint exists; and a correction module for performing optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern, wherein the target region in the corrected photomask pattern is a blank region excluding the pattern.
[0011] Thirdly, this disclosure provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method for correcting the photomask pattern described in the first aspect.
[0012] Fourthly, this disclosure provides an electronic device, comprising: a memory storing a computer program thereon; and a processor for executing the computer program in the memory to implement the photomask pattern correction method described in the first aspect.
[0013] Fifthly, this disclosure provides a computer program product, including a computer program that, when executed by a processor, implements the method for correcting the photomask pattern described in the first aspect.
[0014] The above technical solution involves designing regions that affect mask constraints within the original photomask pattern, and then applying optical proximity correction to the original photomask pattern. Optical proximity correction ensures that the pattern formed on the semiconductor silicon wafer based on the photomask is as close as possible to the designed pattern. Furthermore, because regions affecting mask constraints are designed and corrected using optical proximity correction, these regions are transformed into blank areas excluding the pattern. Therefore, the corrected photomask pattern eliminates mask constraints and achieves a convergent profile. Thus, this technical solution effectively corrects the photomask pattern while eliminating constraints and achieving profile convergence.
[0015] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0016] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a flowchart illustrating a method for correcting a photomask pattern according to an exemplary embodiment.
[0017] Figure 2 This is a schematic diagram illustrating a first related technology for photomask pattern correction according to an exemplary embodiment.
[0018] Figure 3 This is a schematic diagram illustrating a second related technique for photomask pattern correction according to an exemplary embodiment.
[0019] Figure 4 This is an example diagram illustrating a raw photomask pattern according to an exemplary embodiment.
[0020] Figure 5 This is an example diagram illustrating a modified photomask pattern according to an exemplary embodiment.
[0021] Figure 6 This is a flowchart illustrating the application of a photomask according to an exemplary embodiment.
[0022] Figure 7 This is a structural block diagram of a photomask pattern correction device according to an exemplary embodiment.
[0023] Figure 8 This is a block diagram illustrating an electronic device according to an exemplary embodiment. Detailed Implementation
[0024] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0025] In this disclosure, unless otherwise stated, directional terms such as "up," "down," "left," "right," "front," and "back" are used only for the convenience of describing this disclosure and for simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure.
[0026] In semiconductor manufacturing, photomask technology is commonly involved. Photomask technology refers to the creation of a mask used in the photolithography process; therefore, a photomask can also be called a photomask. A photomask is a master pattern used to transfer a designed integrated circuit pattern onto a silicon wafer. Through the action of the photomask, the designed pattern can be copied onto the silicon wafer, thus forming the corresponding design pattern on the silicon wafer.
[0027] To ensure that the pattern formed on the silicon wafer is as close as possible to the design pattern, the pattern on the photomask can be corrected through simulation and optimization.
[0028] In related technologies, it is difficult to strike a balance between mask constraints and contour convergence when performing pattern correction. For example, in semiconductor pattern design, the patterns of the interconnect layers involve triple and quintuple star patterns. When correcting the corresponding mask patterns, a trade-off must be made between roundness and mask constraints, thus failing to achieve a satisfactory correction effect.
[0029] Regarding the limitations of photomasks, it can be understood that photomasks are susceptible to various factors during their production and use, which may lead to unstable photomask quality. Therefore, certain limitations of photomasks can be addressed from the perspective of graphic design.
[0030] The degree of roundness can characterize how close a circle is to a theoretical circle. Therefore, the higher the roundness, the better the contour convergence of the figure. Based on this, the present disclosure provides a technical solution that designs regions in the original photomask pattern that affect photomask constraints, and performs optical proximity correction on the original photomask pattern. Optical proximity correction ensures that the pattern formed on the semiconductor silicon wafer based on the photomask is as close as possible to the designed pattern. Furthermore, because regions affecting photomask constraints are designed, and through optical proximity correction, these regions are corrected to blank areas excluding the pattern, the corrected photomask pattern can eliminate photomask constraints and achieve a converged outline. Therefore, this technical solution can effectively correct the photomask pattern while eliminating photomask constraints and achieving outline convergence.
[0031] In this disclosure, OPC (Optical Proximity Correction) technology is used to correct the photomask pattern. OPC is an etching enhancement technology mainly used in the manufacturing process of semiconductor devices to ensure that the edges of the designed pattern are completely etched during the manufacturing process.
[0032] The modification of the photomask pattern can be implemented using an OPC platform, which can be understood as the hardware or software platform required to implement OPC technology. Therefore, the technical solution of this disclosure embodiment can be applied to an OPC platform.
[0033] Figure 1 This is a flowchart illustrating a method for correcting a photomask pattern according to an exemplary embodiment, the method comprising the following steps: Step S11: Obtain the original photomask pattern, which includes the target area, which is the area that affects the limitation of the photomask.
[0034] Step S12: Perform optical proximity correction on the original photomask pattern to obtain the corrected photomask pattern. In the corrected photomask pattern, the target area is the blank area that does not include the pattern.
[0035] In step S11, the target area is a newly added area in the original photomask pattern. It can be understood as an area added on the basis of the existing pattern, which needs to be distinguished from other parts of the photomask pattern. Furthermore, this area is the area that affects the constraints of the photomask.
[0036] Figure 2 This is a schematic diagram illustrating a first related technology for photomask pattern correction according to an exemplary embodiment. For example... Figure 2 As shown, the photomask pattern involves a triple star pattern, which can be used to form interconnect holes on the semiconductor interconnect layer. An OPC correction pattern portion is added to alleviate photomask constraints through optical proximity correction. However, this OPC correction only considers photomask constraints; if semiconductor manufacturing is based on this pattern, the resulting pattern will have poor roundness and convergence.
[0037] Figure 3 This is a schematic diagram illustrating a second related technology for photomask pattern correction, according to an exemplary embodiment. For example... Figure 3 As shown, the photomask pattern involves a triple star pattern, which can be used to form interconnect holes on the semiconductor interconnect layer. An OPC correction pattern is added through optical proximity correction, which can improve roundness and convergence. However, this OPC correction only considers roundness and convergence; if semiconductor manufacturing is based on this pattern, the resulting pattern will have photomask limitations, leading to unstable quality.
[0038] Therefore, in this embodiment of the disclosure, it is possible to Figure 3 Based on the OPC graphic correction section shown, a target area is generated, which can be called a no-fly zone. The processing strategy for this no-fly zone during correction is different from the processing strategy for other areas.
[0039] Furthermore, as an optional implementation, the original photomask pattern includes: a first pattern, a second pattern, and a third pattern; the target area includes a first target area and a second target area; a first blank area exists between the first pattern and the second pattern; a second blank area exists between the second pattern and the third pattern; the first target area is located in the first blank area; and the second target area is located in the second blank area.
[0040] Figure 4 This is an example diagram illustrating an original photomask pattern according to an exemplary embodiment, such as... Figure 4 As shown, the original photomask pattern involves a first pattern, a second pattern, and a third pattern arranged in a sequentially tilted manner. The target area includes a first target area located between the first and second patterns and a second target area located between the second and third patterns. Between the first and second patterns, there is a partial blank area where the first target area can be located. Between the second and third patterns, there is also a partial blank area where the second target area can be located.
[0041] In step S12, optical proximity effect correction is performed on the original photomask pattern to obtain the corrected photomask pattern. In the corrected photomask pattern, the target area can be regarded as a blank area that does not include the pattern, or it can be understood that this part of the area will not be involved in the correction.
[0042] Therefore, as an optional implementation, the modified photomask pattern includes a modified first pattern, a modified second pattern, and a modified third pattern. In the modified photomask pattern, the first target area is the blank area between the modified first pattern and the modified second pattern that does not include the pattern, and the second target area is the blank area between the modified second pattern and the modified third pattern that does not include the pattern.
[0043] Figure 5 This is an example diagram illustrating a modified photomask pattern according to an exemplary embodiment, such as... Figure 5 As shown, the corrected photomask pattern, in Figure 4 Based on the original photomask pattern shown, a correction area was added, which makes the corrected photomask pattern more extensive than the original photomask pattern.
[0044] Specifically, in the first figure, correction areas were added around the perimeter, and the correction areas on the left, top, and bottom are more extensive than those on the right. In the second figure, correction areas were added around the perimeter, and the correction areas on all four sides are roughly the same size. In the third figure, correction areas were added around the perimeter, and the correction areas on the right, top, and bottom are more extensive than those on the left.
[0045] Furthermore, the first target area is the blank area between the corrected first and second figures, excluding the blank areas, i.e., the area not involved in the correction. The second target area is the blank area between the corrected second and third figures, excluding the blank areas, i.e., the area not involved in the correction.
[0046] It is understood that the above graphic examples are merely exemplary embodiments. Depending on different application scenarios and different graphics, the setting method of the target area can be flexibly changed, and no limitation is made here.
[0047] In step S12, the original photomask pattern is corrected using OPC technology. The OPC platform usually has a mature model configured, which can be used to quickly simulate and optimize the image.
[0048] Therefore, as an optional implementation, step S12 includes: calculating the light intensity of the region other than the target region in the original photomask pattern using the calculation model in the optical proximity correction platform to obtain light intensity distribution information; and correcting the original photomask pattern for optical proximity effect based on the light intensity distribution information to obtain the corrected photomask pattern.
[0049] The OPC correction process involves light intensity calculation and correction iteration. The result of the light intensity calculation is a type of information required for the correction iteration.
[0050] It is understandable that OPC correction is a mature technology. Therefore, the light intensity calculation method and correction iteration method in the OPC correction process can refer to mature technologies in this field. That is, based on the light intensity distribution information, optical proximity effect correction is performed on the original photomask pattern to obtain the corrected photomask pattern, which can refer to mature OPC technology in this field.
[0051] The difference between this embodiment and related technologies is that this embodiment adds a target area and configures the light intensity calculation method of the OPC platform's calculation model to calculate the light intensity of the area other than the target area in the original photomask pattern. Therefore, the obtained light intensity distribution information does not involve the light intensity of the target area, and subsequent corrections do not involve the correction of this part of the area.
[0052] Furthermore, in order to configure the light intensity calculation of the computational model, the correction method may also include: configuring the light intensity calculation method corresponding to the computational model, so that the computational model performs light intensity calculation on the region other than the target region in the original photomask pattern based on the configured light intensity calculation method.
[0053] It is understandable that OPC Recipes generally have relevant settings configured, which are detailed OPC settings, and may include light intensity calculation methods and correction iteration methods, etc.
[0054] A recipe refers to a set of parameters that guide equipment in performing specific process operations, including temperature, pressure, and time. This concept is crucial in the semiconductor industry because it directly impacts product quality and production efficiency. Recipe verification is a critical step, involving every step and condition in the semiconductor manufacturing process to ensure the correct execution of semiconductor processes. Simply put, when a wafer enters the processing equipment, the specific steps provided by the equipment and the conditions required for each step constitute the recipe. This includes specific parameters such as the reaction chamber the wafer passes through after entering the equipment, the gases used, and their flow rates. Therefore, a recipe is not only a technical guide in the semiconductor manufacturing process but also a key factor in ensuring product quality and production efficiency.
[0055] Therefore, OPC Recipe needs to open up its underlying degrees of freedom. With open underlying degrees of freedom, the light intensity calculation method of the calculation model can be configured. For example, in the light intensity calculation formula, the light intensity value of the target area can be deducted so that the light intensity distribution information does not include the light intensity information of the target area.
[0056] It is understandable that OPC correction will not involve this part since the light intensity information of the target area is not calculated. Therefore, it can avoid the mask limitation caused by this part and thus remove the mask limitation. Furthermore, since other correction strategies of OPC are not changed, OPC correction can meet the requirements of roundness and contour convergence. Consequently, the final corrected mask pattern can not only remove the mask limitation but also meet the requirements of roundness and contour convergence.
[0057] Furthermore, as described in the foregoing embodiments, the original photomask pattern can be a pattern used to form the connection holes of the connection layer, that is, the original photomask pattern is the pattern corresponding to the connection holes on the semiconductor connection layer.
[0058] In this case, the correction method may further include: fabricating a photomask based on the corrected photomask pattern to obtain a photomask, the photomask including a pattern for forming a connecting hole; transferring the pattern for forming the connecting hole onto a connecting layer; and forming a connecting hole on the connecting layer based on the photomask pattern transferred onto the connecting layer, the roundness of the connecting hole being higher than a preset roundness.
[0059] In this implementation, a photomask is fabricated based on the modified photomask pattern, resulting in a photomask that meets requirements for sphericity, contour convergence, and the absence of photomask limitations. Therefore, pattern transfer can be performed based on this photomask, and further, based on the photomask pattern transferred to the interconnect layer, interconnect holes are formed on the interconnect layer, realizing the semiconductor interconnect layer manufacturing process. In addition to the photomask meeting requirements for sphericity, contour convergence, and the absence of photomask limitations, the final interconnect holes also exhibit high sphericity.
[0060] The preset roundness can be used to evaluate whether the roundness is reasonable. Therefore, it can be a relatively high roundness value, and different presets can be made in different application scenarios.
[0061] It is understood that this implementation method is applied to the manufacturing scenario of semiconductor interconnect layers. In other manufacturing scenarios, the above implementation method can also be used, the difference being the different design of the pattern, which is not limited in the embodiments disclosed herein.
[0062] In conjunction with the above embodiments, Figure 6 This is a flowchart illustrating the application of a photomask according to an exemplary embodiment, such as... Figure 6 As shown, the original mask pattern is first generated, then the no-fly zone (i.e., the target area) is configured, and OPC is used to correct it to obtain the corrected pattern. Finally, the mask can be made based on the corrected mask pattern, which not only removes the mask restrictions, but also ensures that the obtained mask meets the requirements of roundness and contour convergence.
[0063] Figure 7 This is a structural block diagram of a photomask pattern correction device 700 according to an exemplary embodiment, such as... Figure 7 As shown, the device includes: The acquisition module 701 is used to acquire the original photomask pattern, which includes a target area, and the target area is an area where the photomask is restricted.
[0064] The correction module 702 is used to perform optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern. In the corrected photomask pattern, the target area is a blank area that does not include the pattern.
[0065] Optionally, the original photomask pattern includes a first pattern, a second pattern, and a third pattern, the target area includes a first target area and a second target area, a first blank area exists between the first pattern and the second pattern, a second blank area exists between the second pattern and the third pattern, the first target area is located in the first blank area, and the second target area is located in the second blank area.
[0066] Optionally, the corrected photomask pattern includes a corrected first pattern, a corrected second pattern, and a corrected third pattern. In the corrected photomask pattern, the first target area is the blank area between the corrected first pattern and the corrected second pattern that does not include the pattern, and the second target area is the blank area between the corrected second pattern and the corrected third pattern that does not include the pattern.
[0067] Optionally, the correction module 702 is further configured to: calculate the light intensity of the region other than the target region in the original photomask pattern using the calculation model in the optical proximity correction platform to obtain light intensity distribution information; and perform optical proximity correction on the original photomask pattern according to the light intensity distribution information to obtain the corrected photomask pattern.
[0068] Optionally, the device further includes a configuration module for configuring the light intensity calculation method corresponding to the calculation model, so that the calculation model performs light intensity calculation on the region other than the target region in the original photomask pattern based on the configured light intensity calculation method.
[0069] Optionally, the device further includes a fabrication module for fabricating a photomask based on the modified photomask pattern to obtain a photomask, the photomask including a pattern for forming the connecting hole; transferring the pattern for forming the connecting hole onto the connecting layer; and forming the connecting hole on the connecting layer based on the photomask pattern transferred onto the connecting layer, the roundness of the connecting hole being higher than a preset roundness.
[0070] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.
[0071] Figure 8 This is a block diagram illustrating an electronic device 800 according to an exemplary embodiment. For example... Figure 8 As shown, the electronic device 800 may include a processor 801 and a memory 802. The electronic device 800 may also include one or more of a multimedia component 803, an input / output (I / O) interface 804, and a communication component 805.
[0072] The processor 801 controls the overall operation of the electronic device 800 to complete all or part of the steps in the photomask pattern correction method described above. The memory 802 stores various types of data to support the operation of the electronic device 800. This data may include, for example, instructions for any application or method operating on the electronic device 800, and application-related data such as contact data, sent and received messages, pictures, audio, video, etc. The memory 802 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. The multimedia component 803 may include a screen and audio components. The screen may be, for example, a touchscreen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signals may be further stored in memory 802 or transmitted via communication component 805. The audio component also includes at least one speaker for outputting audio signals. I / O interface 804 provides an interface between processor 801 and other interface modules, such as a keyboard, mouse, buttons, etc. These buttons may be virtual or physical buttons. Communication component 805 is used for wired or wireless communication between the electronic device 800 and other devices. Wireless communication may include Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, or 4G, or a combination thereof; therefore, the corresponding communication component 805 may include a Wi-Fi module, a Bluetooth module, or an NFC module.
[0073] In an exemplary embodiment, the electronic device 800 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above-described method for correcting the photomask pattern.
[0074] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the photomask pattern correction method described above. For example, the computer-readable storage medium may be the memory 802 including the program instructions described above, which may be executed by the processor 801 of the electronic device 800 to complete the photomask pattern correction method described above.
[0075] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the above-described method for correcting the photomask pattern.
[0076] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0077] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0078] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
[0079] In the above detailed description, reference has been made to the accompanying drawings, which illustrate specific aspects of this disclosure by way of illustration. In this regard, terms indicating direction or positional relationship, such as “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” “counterclockwise,” “axial,” “radial,” and “circumferential,” are used with reference to the orientation of the described figures. Since components of the described device can be positioned in multiple different orientations, directional terms are used for illustrative purposes and not for limitation. It should be understood that other aspects can be utilized and structural or logical changes can be made without departing from the concept of this disclosure. Therefore, the following detailed description should not be considered limiting.
[0080] It should be understood that, unless otherwise specifically indicated, features of various embodiments of this disclosure described herein can be combined with each other. As used herein, the term “and / or” includes any one of the relevant listed items and any combination of any two or more; similarly, “at least one of…” includes any one of the relevant listed items and any combination of any two or more.
[0081] Furthermore, the term "above" as used herein with respect to components, elements, or material layers formed or located "above" a surface may be used to indicate that the component, element, or material layer is "indirectly" positioned (e.g., placed, formed, deposited, etc.) on the surface such that one or more additional components, elements, or layers are arranged between the surface and the component, element, or material layer. However, the term "above" as used with respect to components, elements, or material layers formed or located "above" a surface may also optionally have a specific meaning: that the component, element, or material layer is "directly" positioned (e.g., placed, formed, deposited, etc.) on the surface, for example, in direct contact with the surface.
[0082] Although terms such as “first,” “second,” and “third” may be used herein to describe various components, parts, regions, layers, or sections, these components, parts, regions, layers, or sections are not limited to these terms. Rather, these terms are used only to distinguish one component, part, region, layer, or section from another. Therefore, without departing from the teachings of the examples described herein, the first component, part, region, layer, or section mentioned in the examples may also be referred to as the second component, part, region, layer, or section. Furthermore, the terms “first” and “second” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first” or “second” may explicitly or implicitly include at least one of that feature. In the description herein, “a plurality” means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0083] It should be understood that spatial relative terms, such as “above,” “upper,” “below,” and “lower,” are used herein to describe the relationship between one element and another shown in the figures. In addition to the orientation depicted in the figures, these spatial relative terms are also intended to encompass different orientations of the device in use or operation. For example, if the device in the figures is flipped, an element described as “above” or “upper” relative to another element would be “below” or “lower” relative to that other element. Thus, depending on the spatial orientation of the device, the term “above” encompasses both above and below orientations. Devices may have other orientations (e.g., rotated 90 degrees or in other orientations), and the spatial relative terms used herein should be interpreted accordingly.
[0084] Furthermore, the term “exemplary” is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “exemplary” is not necessarily to be construed as advantageous compared to other aspects or designs. Rather, the use of the term “exemplary” is intended to present the concept in a concrete manner. As used herein, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” That is, unless otherwise specified or clear from the context, “X applies A or B” is intended to mean any of the natural inclusive arrangements. That is, “X applies A or B” satisfies any of the foregoing instances if X applies A; X applies B; or both X applies A and B. Additionally, unless otherwise specified or clear from the context to refer to the singular form, the articles “a” and “an” as used in this application and the appended claims are generally understood to mean “one or more.”
[0085] Similarly, although this disclosure has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art upon reading and understanding this specification and the accompanying drawings. This disclosure includes all such modifications and variations and is limited only by the scope of the claims. In particular, with respect to the various functions performed by the components described above (e.g., elements, resources, etc.), unless otherwise indicated, the terminology used to describe such components is intended to correspond to any component (functionally equivalent) that performs the specific function of the described component, even if structurally not equivalent to the disclosed structure. Furthermore, although specific features of this disclosure may have been disclosed with respect to only one of several implementations, such features may be combined with one or more other features of other implementations, as may be desired and advantageous to any given or particular application. Moreover, with regard to the terms “comprising,” “owning,” “having,” “having,” or variations thereof as used in the detailed description or claims, such terms are intended to be inclusive in a manner similar to the term “including.”
Claims
1. A method for correcting a photomask pattern, characterized in that, include: Obtain the original photomask pattern, which includes a target region, and the target region is the region that affects the limitation of the photomask. The original photomask pattern is corrected for optical proximity effect to obtain a corrected photomask pattern. In the corrected photomask pattern, the target area is a blank area that does not include the pattern.
2. The correction method according to claim 1, characterized in that, The original photomask pattern includes a first pattern, a second pattern, and a third pattern. The target area includes a first target area and a second target area. There is a first blank area between the first pattern and the second pattern, and there is a second blank area between the second pattern and the third pattern. The first target area is located in the first blank area, and the second target area is located in the second blank area.
3. The correction method according to claim 2, characterized in that, The corrected photomask pattern includes a corrected first pattern, a corrected second pattern, and a corrected third pattern. In the corrected photomask pattern, the first target area is the blank area between the corrected first pattern and the corrected second pattern that does not include the pattern, and the second target area is the blank area between the corrected second pattern and the corrected third pattern that does not include the pattern.
4. The correction method according to claim 1, characterized in that, The step of performing optical proximity correction on the original photomask pattern to obtain the corrected photomask pattern includes: Using the computational model in the optical proximity effect correction platform, the light intensity of the region other than the target region in the original photomask pattern is calculated to obtain the light intensity distribution information. Based on the light intensity distribution information, the original photomask pattern is corrected for optical proximity effect to obtain the corrected photomask pattern.
5. The correction method according to claim 4, characterized in that, The correction method further includes: Configure the light intensity calculation method corresponding to the calculation model so that the calculation model performs light intensity calculation on the region other than the target region in the original photomask pattern based on the configured light intensity calculation method.
6. The correction method according to any one of claims 1 to 5, characterized in that, The original photomask pattern is the pattern corresponding to the interconnect holes on the semiconductor interconnect layer, and the correction method further includes: A photomask is fabricated based on the modified photomask pattern to obtain a photomask, the photomask including a pattern for forming the connecting hole; The pattern used to form the connecting hole is transferred onto the connecting layer; Based on the photomask pattern transferred onto the connecting layer, the connecting hole is formed on the connecting layer, and the roundness of the connecting hole is higher than a preset roundness.
7. A device for correcting a photomask pattern, characterized in that, include: The acquisition module is used to acquire the original photomask pattern, which includes a target region, and the target region is the region where the photomask is restricted. The correction module is used to perform optical proximity effect correction on the original photomask pattern to obtain a corrected photomask pattern. In the corrected photomask pattern, the target area is a blank area that does not include the pattern.
8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the program implements the method for correcting the photomask pattern as described in any one of claims 1 to 6.
9. An electronic device, characterized in that, include: A memory on which computer programs are stored; A processor for executing the computer program in the memory to implement the photomask pattern correction method according to any one of claims 1 to 6.
10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the method for correcting the photomask pattern as described in any one of claims 1 to 6.