High-frequency module and communication device

Abstract

Provided are a high-frequency module and a communication device capable of reducing interference between a first communication band and a second communication band adjacent to each other and reducing deterioration in communication quality. The high-frequency module includes a first filter, a second filter, a first switch, a second switch, and a first variable circuit element. The first filter has a first passband including a first communication band. The second filter has a second passband including a second communication band. The first switch is configured to select a connection destination of each of the plurality of antenna terminals from a first end portion of each of the first filter and the second filter. The second switch is used to select a connection destination of the second end of the second filter from among the first power amplifier and the first low noise amplifier. The first variable circuit element is connected between the second filter and the second switch, and shifts an attenuation band on the first passband side of the second filter.

Description

Technical Field

[0001] This invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module for processing a first TDD signal of a first communication frequency band and a second TDD signal of a second communication frequency band, and a communication device having the high-frequency module. Background Technology

[0002] The multiplexer described in Patent Document 1 has multiple switches, multiple filters, multiple power amplifiers, and multiple low-noise amplifiers.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-65416 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In a front-end module such as the multiplexer described in Patent Document 1, the aforementioned multiple filters generally include a filter for frequency band 77 (n77, the first communication frequency band) and a filter for frequency band 79 (n79, the second communication frequency band). The communication frequency bands of n77 and n79 are adjacent to each other. Therefore, if transmission using n77 and reception using n79 are performed simultaneously, the transmission signal of n77 leaks to the reception path side used by n79, and the reception sensitivity of n79 deteriorates. In addition, when communication using n79 is performed alone, efforts are made to reduce the degradation of the communication quality of n79.

[0008] The present invention was made in view of the above-mentioned problems, and its object is to provide a high-frequency module and communication device that can reduce interference between adjacent first and second communication frequency bands and reduce the degradation of communication quality.

[0009] Solution for solving the problem

[0010] One aspect of the present invention involves a high-frequency module that processes a first TDD signal in a first communication frequency band and a second TDD signal in a second communication frequency band adjacent to the first communication frequency band. The communication bandwidth of the first communication frequency band is wider than that of the second communication frequency band. The high-frequency module includes a first filter, a second filter, a first switch, a second switch, and a first variable circuit element. The first filter has a first passband encompassing the first communication frequency band. The second filter has a second passband encompassing the second communication frequency band. The first switch is used to select connection destinations for a plurality of antenna terminals from first ends of each of the first and second filters. The second switch is used to select connection destinations for second ends of the second filter from a first power amplifier and a first low-noise amplifier. The first variable circuit element is connected inside the second filter, inside the second switch, or between the second filter and the second switch, for shifting the attenuation band of the second filter on the first passband side.

[0011] One embodiment of the present invention relates to a communication device comprising the aforementioned high-frequency module and signal processing circuitry. The signal processing circuitry is connected to the high-frequency module and performs signal processing on the high-frequency signals.

[0012] Invention Effects

[0013] The high-frequency module and communication device according to the present invention have the advantages of reducing interference between adjacent first and second communication frequency bands and reducing the degradation of communication quality. Attached Figure Description

[0014] Figure 1 This is a block diagram of the high-frequency module and communication device involved in Embodiment 1.

[0015] Figure 2 This is an explanatory diagram illustrating the frequency characteristics of the second filter possessed by the aforementioned high-frequency module.

[0016] Figure 3 This is a block diagram of the high-frequency module and communication device involved in Embodiment 2.

[0017] Figure 4 This is a block diagram of the high-frequency module and communication device involved in Embodiment 3.

[0018] Figure 5 This is an enlarged view of the main part of the aforementioned high-frequency module.

[0019] Figure 6 This is a block diagram of the high-frequency module and communication device involved in Embodiment 4.

[0020] Figure 7 This is a block diagram of the high-frequency module and communication device involved in a variation of embodiment 4.

[0021] Figure 8 This is a cross-sectional view of the high-frequency module involved in Implementation Method 5.

[0022] Figure 9 This is a top view obtained by viewing the first main surface from a direction orthogonal to the first main surface of the mounting substrate of the aforementioned high-frequency module. Detailed Implementation

[0023] (1) Implementation Method 1

[0024] The high-frequency module 1 according to Embodiment 1 will be described in detail with reference to the accompanying drawings.

[0025] (1-1)Overview

[0026] like Figure 1 As shown, the high-frequency module 1 according to Embodiment 1 processes a first TDD (Time Division Duplex) signal in a first communication frequency band (e.g., n77) and a second TDD signal in a second communication frequency band (e.g., n79). The communication bandwidth of the first communication frequency band is wider than that of the second communication frequency band. The high-frequency module 1 includes first filters 7 and 8, a second filter 9, a first switch 6, a second switch 10, and a first variable circuit element 12. The first filters 7 and 8 each have a first passband 71 and 81 that includes the first communication frequency band (see reference). Figure 2 The second filter 9 has a second passband 91 that includes the second communication frequency band (see reference). Figure 2 The first switch 6 is used to select the connection destination of the first ends 7b and 17a of each filter of the first filter 7, 8 and the second filter 9 from the plurality of antenna terminals 5a~5c. The second switch 10 is used to select the connection destination of the second end 17b of the second filter 9 from the power amplifier 14 (first power amplifier) ​​and the low noise amplifier 15 (first low noise amplifier). The first variable circuit element 12 is connected inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10 (in... Figure 1 In the example, it is connected between the second filter 9 and the second switch 10. The first variable circuit element 12 enables the second attenuation band 93 on the first passband 71, 81 side of the second filter 9 (refer to...). Figure 2 Offset.

[0027] Here, the TDD signals (first TDD signal and second TDD signal) are signals used to switch between transmission and reception in a time-division duplex manner during transmission and reception. The first TDD signal is a TDD signal with a frequency within a first communication frequency band. The second TDD signal is a TDD signal with a frequency within a second communication frequency band.

[0028] According to this structure, by using the first variable circuit element 12 to shift the second attenuation band 93 on the first passband 71, 81 side of the second filter 9, the interference between adjacent first and second communication bands can be reduced and the degradation of communication quality can be reduced.

[0029] (1-2) Structure of the communication device

[0030] like Figure 1 As shown, the communication device 200 is a communication device equipped with a high-frequency module 1. The communication device 200 is, for example, a portable terminal (e.g., a smartphone), but is not limited to portable terminals; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module capable of supporting both 4G (fourth-generation mobile communication) and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, 3GPP (Third Generation Partnership Project) or LTE (Long Term Evolution) standards. The 5G standard is, for example, 5G NR (New Radio).

[0031] In addition to the high-frequency module 1, the communication device 200 also includes a signal processing circuit 2 and multiple (in Figure 1 In the example, there are three antennas 3. When distinguishing the three antennas 3, they are recorded as the first antenna 3a, the second antenna 3b, and the third antenna 3c.

[0032] The high-frequency module 1 is configured to amplify the transmit signal (high-frequency signal) output from the signal processing circuit 2 and transmit it from one of the multiple antennas 3. Additionally, the high-frequency module 1 is configured to amplify the receive signal (high-frequency signal) received by one of the multiple antennas 3 and output it to the signal processing circuit 2. The high-frequency module 1 is controlled, for example, by the signal processing circuit 2.

[0033] Signal processing circuit 2 is connected to high-frequency module 1 and performs signal processing on high-frequency signals. More specifically, signal processing circuit 2 is configured to process the transmitted signals output to high-frequency module 1. Additionally, signal processing circuit 2 is configured to process the received signals output from high-frequency module 1. Signal processing circuit 2 includes RF (Radio Frequency) signal processing circuit 21 and baseband signal processing circuit 22.

[0034] The RF signal processing circuit 21 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes high-frequency signals (transmit and receive signals). The RF signal processing circuit 21 performs up-conversion and other signal processing on the transmit signal output from the baseband signal processing circuit 22 and outputs it to the high-frequency module 1. Additionally, the RF signal processing circuit 21 performs down-conversion and other signal processing on the receive signal output from the high-frequency module 1 and outputs it to the baseband signal processing circuit 22.

[0035] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 generates a transmit signal based on externally input baseband signals (e.g., audio and image signals) and outputs the generated transmit signal to the RF signal processing circuit 21. Additionally, the baseband signal processing circuit 22 outputs a receive signal from the RF signal processing circuit 21 to the outside. This output signal (receive signal) can be used, for example, as an image signal for image display or as an audio signal for communication.

[0036] (1-3) Structure of High Frequency Module 1

[0037] High-frequency module 1 processes the first TDD signal of the first communication frequency band and the second TDD signal of the second communication frequency band. The communication bandwidth of the first communication frequency band is wider than that of the second communication frequency band. The second communication frequency band is adjacent to the first communication frequency band. Here, "the first communication frequency band and the second communication frequency band are adjacent" means that there are no other communication frequency bands between the first and second communication frequency bands. The first communication frequency band is, for example, n77, and its transmit and receive frequency bands are the same, for example, 3300MHz~4200MHz. Sometimes the transmit and receive frequency bands of the first communication frequency band are collectively referred to as the passband. The second communication frequency band is, for example, n79, and its transmit and receive frequency bands are the same, for example, 4200MHz~5000MHz. Sometimes the transmit and receive frequency bands of the second communication frequency band are collectively referred to as the passband. The first communication frequency band is wideband, and the second communication frequency band is narrowband.

[0038] like Figure 1 As shown, the high-frequency module 1, for example, includes multiple external terminals 5a~5g, a first switch 6, and multiple (in) Figure 1 (In the example, there are two) First filter 7, 8, Second filter 9, Second switch 10, Variable matching circuit 11, First variable circuit element 12, Multiple (in Figure 1 In the example, there are two power amplifiers 13 and 14, and multiple (in...) Figure 1 In the example, there are two low-noise amplifiers, 15 and 16. Figure 1 In the example, the first filter 8 and the second filter 9 constitute a duplexer 17.

[0039] (1-3-1)External terminal

[0040] External terminal 5a is an antenna terminal connected to the first antenna 3a. External terminal 5b is an antenna terminal connected to the second antenna 3b. External terminal 5c is an antenna terminal connected to the third antenna 3c. External terminal 5d is connected to the output of signal processing circuit 2 and is the input terminal for the first TDD signal of the first communication frequency band output from the output of signal processing circuit 2. External terminal 5e is connected to the output of signal processing circuit 2 and is the input terminal for the second TDD signal of the second communication frequency band output from the output of signal processing circuit 2. External terminal 5f is connected to the input of signal processing circuit 2 and is the output terminal for outputting the second TDD signal of the second communication frequency band processed by high-frequency module 1 to the input of signal processing circuit 2. External terminal 5g is connected to the input of signal processing circuit 2 and is the output terminal for outputting the first TDD signal of the first communication frequency band processed by high-frequency module 1 to the input of signal processing circuit 2.

[0041] (1-3-2) First switch 6

[0042] The first switch 6 is, for example, an antenna switch. The first switch 6 is used to select the antenna to be used for transmission or reception from among multiple antennas 3. The first switch 6 is controlled according to a control signal from a controller (not shown) within the high-frequency module 1. The first switch 6 is, for example, a switch IC (Integrated Circuit).

[0043] The first switch 6 has multiple (in) Figure 1 In the example, there are three) common terminals 6a~6c and multiple (in Figure 1In this example, there are two selection terminals 6d and 6e. Multiple common terminals 6a-6c are selectively connected to one of the multiple selection terminals 6d or 6e. The multiple common terminals 6a-6c are connected to multiple external terminals 5a-5c. Selection terminal 6d is connected to the output section 7b of the first filter 7. Selection terminal 6e is connected to the first input / output section 17a of the duplexer 17.

[0044] (1-3-3) First filter 7

[0045] The first filter 7 is a transmission filter having a first passband that includes a first communication frequency band (e.g., n77). The first filter 7 has an input section 7a and an output section 7b. The input section 7a is connected to the output section 13b of the power amplifier 13. The output section 7b is connected to the selection terminal 6d of the first switch 6. The first filter 7 removes signal components of frequency bands other than the first passband from the transmission signal (first TDD signal) input to the input section 7a (i.e., allows signal components of the same frequency band as the first passband to pass through), and outputs the removed transmission signal from the output section 7b.

[0046] (1-3-4) Duplexer 17

[0047] The duplexer 17 has a first input / output section 17a, a second input / output section 17b, and an output section 17c. The first input / output section 17a is connected to the selection terminal 6e of the first switch 6. The second input / output section 17b is connected to the common terminal 10a of the second switch 10 via a variable matching circuit 11. The output section 17c is connected to the input section 16a of the low-noise amplifier 16.

[0048] The duplexer 17 has a first filter 8 and a second filter 9.

[0049] The first filter 8 is a receiving filter having a first passband that includes a first communication frequency band (e.g., n77). The first filter 8 has the same structure as the first filter 7. The first filter 8 has an input section and an output section. The input section of the first filter 8 also serves as the first input / output section 17a and is connected to the selection terminal 6e of the first switch 6. The output section of the first filter 8 is the output section 17c, which is connected to the input section 16a of the low-noise amplifier 16. Hereinafter, the input section and the output section of the first filter 8 will sometimes be described as the input section 17a and the output section 17c, respectively. The first filter 8 removes signal components of frequency bands other than the first passband from the received signal (first TDD signal) input to the input section 17a (i.e., allows signal components of the same frequency band as the first passband to pass through), and outputs the removed received signal from the output section 17c.

[0050] The second filter 9 is a transmit / receive filter having a second passband that includes a second communication frequency band (e.g., n79). The second filter 9 has a first input / output section and a second input / output section. The first input / output section of the second filter 9 also serves as the first input / output section 17a and is connected to the selection terminal 6e of the first switch 6. The second input / output section 17b of the second filter 9 is connected to the common terminal 10a of the second switch 10 via a variable matching circuit 11. Hereinafter, the first input / output section and the second input / output section of the second filter 9 will sometimes be described as the first input / output section 17a and the second input / output section 17b, respectively.

[0051] The second filter 9 removes signal components in frequency bands outside the second passband from the received signal (second TDD signal) input to the first input / output unit 17a (i.e., allows signal components in the same frequency band as the second passband to pass through), and outputs the removed received signal from the second input / output unit 17b. Additionally, the second filter 9 removes signal components in frequency bands outside the second passband from the transmitted signal (second TDD signal) input to the second input / output unit 17b (i.e., allows signal components in the same frequency band as the second passband to pass through), and outputs the removed transmitted signal from the first input / output unit 17a.

[0052] The second filter 9 has attenuation bands on both sides of the second passband. As will be described later, by changing the characteristic value (impedance) of the variable matching circuit 11, the attenuation band on the first passband (passband of the first filter 8) side of the second filter 9 can be shifted to the first passband side or the second passband side.

[0053] (1-3-5) Second switch 10

[0054] The second switch 10 is a switch used to select the connection destination of the second input / output section 17b (second end) of the second filter 9 from the power amplifier 14 (first power amplifier) ​​and the low-noise amplifier 15 (first low-noise amplifier). That is, the second switch 10 is a switch used to switch the transmission and reception of the second filter 9 in a time-division duplex (TDD) manner. The second switch 10 is controlled according to a control signal from a controller (not shown). The second switch 10 is, for example, a switch IC (Integrated Circuit).

[0055] The second switch 10 has a common terminal 10a and multiple (in) Figure 1In this example, there are two selection terminals 10b and 10c. A common terminal 10a is selectively connected to one of the two selection terminals 10b or 10c. The common terminal 10a is connected to the second input / output section 17b of the second filter 9 via a variable matching circuit 11. Selection terminal 10b is connected to the output section 14b of the power amplifier 14. Selection terminal 10c is connected to the input section 15a of the low-noise amplifier 15.

[0056] (1-3-6) Variable Matching Circuit 11

[0057] A variable matching circuit 11 is connected between the second filter 9 and the second switch 10 for impedance matching between them. The variable matching circuit 11 is a matching circuit whose characteristic value (impedance) can be changed. By changing this characteristic value, the variable matching circuit 11 shifts the attenuation band of the second filter 9 from the first passband (i.e., the passband of the first communication frequency band) to either the first passband side or the second passband (i.e., the passband of the second filter 9). The characteristic value of the variable matching circuit 11 is changed by a predetermined controller within the high-frequency module 1.

[0058] A first variable circuit element 12 is disposed inside the variable matching circuit 11. The first variable circuit element 12 is a circuit element whose characteristic value can be changed, such as a variable capacitor, a variable inductor, or a variable resistor. Alternatively, the first variable circuit element 12 may also be a circuit composed of multiple circuit elements, including at least one variable circuit element whose characteristic value can be changed. The characteristic value of the first variable circuit element 12 refers to a value used to define a characteristic related to the function of the circuit element; when the circuit element is a capacitor, this characteristic value is capacitance; when the circuit element is an inductor, this characteristic value is inductance; and when the circuit element is a resistor, this characteristic value is resistance. By changing the characteristic value of the first variable circuit element 12, the characteristic value of the variable matching circuit 11 is changed. Therefore, the first variable circuit element 12 is a circuit element that shifts the second attenuation frequency band on the first passband side of the second filter 9 toward the first passband side or the second passband side.

[0059] More specifically, regarding the characteristic value of the first variable circuit element 12, for example, it is possible to select one of two values ​​(a first characteristic value and a second characteristic value). When the characteristic value of the first variable circuit element 12 is the first characteristic value, the second attenuation band of the second filter 9 shifts towards the first passband side of the first communication frequency band. Conversely, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the second attenuation band of the second filter 9 shifts towards the second passband side of the second communication frequency band.

[0060] (1-3-7) Power amplifiers 13 and 14

[0061] Power amplifier 13 amplifies the transmitted signal (first TDD signal) of the first communication frequency band. Power amplifier 13 has an input section 13a and an output section 13b. The input section 13a of power amplifier 13 is connected to an external terminal 5d. The output section 13b of power amplifier 13 is connected to the input section 7a of the first filter 7. Power amplifier 13 amplifies the transmitted signal input to input section 13a and outputs the amplified transmitted signal from output section 13b.

[0062] Power amplifier 14 amplifies the transmission signal (second TDD signal) of the second communication frequency band. Power amplifier 14 has an input section 14a and an output section 14b. The input section 14a of power amplifier 14 is connected to external terminal 5e. The output section 14b of power amplifier 14 is connected to the selection terminal 10b of the second switch 10. Power amplifier 14 amplifies the transmission signal input to input section 14a and outputs the amplified transmission signal from output section 14b.

[0063] (1-3-8) Low-noise amplifiers 15 and 16

[0064] The low-noise amplifier 15 amplifies the received signal (second TDD signal) in the second communication frequency band. The low-noise amplifier 15 has an input section 15a and an output section 15b. The input section 15a of the low-noise amplifier 15 is connected to the selection terminal 10c of the second switch 10. The output section 15b of the low-noise amplifier 15 is connected to an external terminal 5f. The low-noise amplifier 15 amplifies the received signal input to the input section 15a and outputs the amplified received signal from the output section 15b.

[0065] The low-noise amplifier 16 amplifies the received signal (first TDD signal) in the first communication frequency band. The low-noise amplifier 16 has an input section 16a and an output section 16b. The input section 16a of the low-noise amplifier 16 is connected to the output section 17c of the first filter 8. The output section 16b of the low-noise amplifier 16 is connected to an external terminal 5g. The low-noise amplifier 16 amplifies the received signal input to the input section 16a and outputs the amplified received signal from the output section 16b.

[0066] (1-4) Detailed information on the frequency characteristics of the second filter

[0067] Reference Figure 2 The frequency response M2 of the second filter 9 is explained.

[0068] In embodiment 1, the second passband 91 of the second filter 9 is positioned at a higher frequency side than the first passband 71 of the first filter 7.

[0069] First, the frequency characteristics M11 of the first filter 7 will be described. The frequency characteristics M11 of the first filter 7 have a first passband 71, a first transition band 72, and a first attenuation band 73. The first passband 71 is a band that includes a first communication frequency band (e.g., n77). The first transition band 72 is a transition band on the second passband 91 side of the first passband 71, and is configured on the second passband 91 side of the first passband 71. A first boundary frequency K1 is used to define the boundary between the first passband 71 and the first transition band 72. The first attenuation band 73 is an attenuation band on the second passband 91 side of the first passband 71, and is configured on the second passband 91 side of the first transition band 72.

[0070] Next, the frequency characteristics M2 of the second filter 9 will be described. The frequency characteristics M2 of the second filter 9 have a second passband 91, a second transition band 92, and a second attenuation band 93. The second passband 91 is a band that includes the second communication frequency band (e.g., n79). The second transition band 92 is a transition band on the first passband 71 side of the second passband 91, and is configured on the first passband 71 side of the second passband 91. The second boundary frequency K2 is used to define the boundary between the second passband 91 and the second transition band 92. The second attenuation band 93 is an attenuation band on the first passband 71 side of the second passband 91, and is configured on the first passband 71 side of the second transition band 92.

[0071] In embodiment 1, the first communication frequency band (e.g., n77) and the second communication frequency band (e.g., n79) are adjacent to each other, so the frequency band K3 between the first passband 71 of the first filter 7 and the second passband 91 of the second filter 9 is relatively narrow. Therefore, within frequency band K3, the first transition frequency band 72 of the first filter 7 and the second transition frequency band 92 of the second filter 9 overlap with each other.

[0072] The frequency characteristic M2 of the second filter 9 is the frequency characteristic of the second filter 9 when the characteristic value of the first variable circuit element 12 is the first characteristic value. Figure 2 The frequency characteristic M2a is the frequency characteristic of the second filter 9 when the characteristic value of the first variable circuit element 12 is the second characteristic value.

[0073] The frequency characteristic M2a of the second filter 9 is the frequency characteristic after shifting the frequency characteristic M2a of the second filter 9 towards the second passband 91. More specifically, the frequency characteristic M2a of the second filter 9 has a second passband 91a, a second transition band 92a, and a second attenuation band 93a.

[0074] The second passband 91a is a frequency band that includes the second communication frequency band. The second transition frequency band 92a is a transition frequency band on the first passband 71 side of the second passband 91a, and is configured on the first passband 71 side of the second passband 91a. The second attenuation frequency band 93a is an attenuation frequency band on the first passband 71 side of the second passband 91a, and is configured on the first passband 71 side of the second transition frequency band 92a.

[0075] The frequency response M2a of the second filter 9 after the frequency band shift is shifted towards the second passband 91 compared to the frequency response M2 before the frequency band shift. Therefore, the second transition band 92a after the frequency band shift is shifted towards the second passband 91 compared to the second transition band 92 before the frequency band shift, and the second attenuation band 93a after the frequency band shift is shifted towards the second passband 91 (high-frequency side) compared to the second attenuation band 93 before the frequency band shift. Therefore, the overlap between the second transition band 92a after the frequency band shift and the first transition band 72 of the first filter 7 within frequency band K3 is reduced compared to the second transition band 92 before the frequency band shift. As a result, the interference between the frequency response M2a after the frequency band shift and the frequency response M11 of the first filter 7 within frequency band K3 is reduced compared to the frequency response M2 before the frequency band shift.

[0076] Furthermore, the second transition band 92a after the frequency band shift is shifted towards the second passband 91 (high-frequency side) compared to the second boundary frequency K2. Consequently, the second passband 91a after the frequency band shift becomes narrower than the second passband 91 before the shift. As a result, the pass-through loss (also known as insertion loss) of the TDD signal when passing through the second filter 9 increases compared to the frequency characteristic M2 before the shift.

[0077] In other words, compared to the frequency characteristic M2a after the frequency band shift, the frequency characteristic M2 of the second filter 9 before the frequency band shift increases the interference between it and the frequency characteristic M11 of the first filter 7 within the frequency band K3. Furthermore, compared to the frequency characteristic M2a after the frequency band shift, the pass-through loss (also known as insertion loss) of the second TDD signal passing through the second filter 9 is reduced.

[0078] That is, in Embodiment 1, when the characteristic value of the first variable circuit element 12 is the first characteristic value, the second attenuation band 93 on the first passband 71 side of the second filter 9 shifts towards the first passband 71 side. In this case, the insertion loss of the second filter 9 decreases and the interference between the second filter 9 and the first filter 7 increases. On the other hand, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the second attenuation band 93 on the first passband 71 side of the second filter 9 shifts towards the second passband 91 side. In this case, the insertion loss of the second filter 9 increases and the interference between the frequency bands of the second filter 9 and the first filter 7 decreases.

[0079] In Embodiment 1, the frequency characteristic M2a of the second filter 9 after band shift is formed, for example, by synthesizing the frequency characteristic M2 before band shift into the frequency characteristic Q1 of the resonant circuit (not shown in the diagram). Furthermore, the resonant circuit described above is a resonant circuit that attenuates a specific frequency (resonant frequency), such as a notch filter. The peak frequency (resonant frequency) fp of the frequency characteristic Q1 of the resonant circuit is set between the null point N2 of the frequency characteristic M2 of the second filter 9 and the second passband 91.

[0080] That is, the first variable circuit element 12 includes a resonant circuit. If the characteristic value of the first variable circuit element 12 is the first characteristic value, the resonant circuit is invalid, and as a result, the frequency characteristic M2 of the second filter 9 does not change. Alternatively, if the characteristic value of the first variable circuit element 12 is the second characteristic value, the resonant circuit is effective, and as a result, the original frequency characteristic M2 is combined with the frequency characteristic Q1 of the resonant circuit, thereby changing the frequency characteristic M2 of the second filter 9 to the frequency characteristic M2a.

[0081] The notch filter described above is an example of a resonant circuit that attenuates a specific frequency (e.g., a specific frequency between zero N2 and the second passband 91).

[0082] In the above explanation, the frequency characteristic M2 of the second filter 9 was described based on the relationship between the frequency characteristic M2 of the second filter 9 and the frequency characteristic M11 of the first filter 7. As mentioned above, the two first filters 7 and 8 have the same structure. Therefore, the frequency characteristic M12 of the first filter 8 is the same as the frequency characteristic M11 of the first filter 7. That is, the frequency characteristic M12 of the first filter 8 has a first passband 81, a first transition band 82, and a first attenuation band 83. The first passband 81, the first transition band 82, and the first attenuation band 83 of the first filter 8 are the same as the first passband 71, the first transition band 72, and the first attenuation band 73 of the first filter 7, respectively. That is, when the characteristic value of the first variable circuit element 12 is the first characteristic value, the second attenuation band 93 on the first passband 81 side of the second filter 9 shifts towards the first passband 81 side. In this case, the insertion loss of the second filter 9 decreases and the interference between the frequency bands of the second filter 9 and the first filter 8 increases. On the other hand, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the second attenuation band 93 on the first passband 81 side of the second filter 9 shifts towards the second passband 91 side. In this case, the insertion loss of the second filter 9 increases and the interference between the second filter 9 and the first filter 8 in the frequency band decreases.

[0083] (1-5) Operation of high frequency module 1

[0084] Reference Figure 1 The operation of high-frequency module 1 is explained.

[0085] (1-5-1) Operation when using the second communication frequency band alone for communication

[0086] This describes the operation when receiving signals using only the second communication frequency band (first case). In the first case, in the first switch 6, for example, the common terminal 6b is connected to the selection terminal 6e, while the remaining common terminals 6a and 6c are not connected to the selection terminals 6d and 6e. In the second switch 10, the common terminal 10a is connected to the selection terminal 10c. Furthermore, the characteristic value of the first variable circuit element 12 is taken as the first characteristic value, and the frequency characteristic M2 of the second filter 9 (refer to...) Figure 2 The frequency characteristic M2 is maintained. In this state, when antenna 3 receives the received signal of the second TDD signal, the received signal is output to signal processing circuit 2 from external terminal 5f via the first switch, the second filter 9, the variable matching circuit 11, the second switch 10, and the low-noise amplifier 15. At this time, since the frequency characteristic M2 of the second filter 9 is maintained at frequency characteristic M2, the insertion loss of the received signal of the second TDD signal when passing through the second filter 9, especially the loss of the received signal in the second transition band 92a, is reduced. That is, the communication quality when the second TDD signal is used for independent communication can be improved.

[0087] Furthermore, when transmitting using only the second communication frequency band, similarly to the first case described above, the characteristic value of the first variable circuit element 12 is set to the first characteristic value, and the frequency characteristic M2 of the second filter 9 is maintained at frequency characteristic M2. Therefore, the insertion loss of the transmitted second TDD signal passing through the second filter 9 is reduced in the same way as in the case described above, and in particular, the loss of the transmitted signal in the second transition band 92a is reduced.

[0088] (1-5-2) Operation when communicating simultaneously using the first and second communication frequency bands

[0089] This describes the operation when simultaneously transmitting using the first communication band and receiving using the second communication band (the second case). In the first switch 6, for example, common terminal 6a is connected to selection terminal 6d, common terminal 6b is connected to selection terminal 6e, and the remaining common terminal 6c is not connected to selection terminals 6d and 6e. In the second switch 10, common terminal 10a is connected to selection terminal 10c. Furthermore, the characteristic value of the first variable circuit element 12 is set to the second characteristic value, and the frequency characteristic M2 of the second filter 9 is changed to frequency characteristic M2a (see reference). Figure 2 ).

[0090] In this state, when antenna 3 receives the received signal of the second TDD signal, the received signal is output from external terminal 5f to signal processing circuit 2 via first switch 6, second filter 9, variable matching circuit 11, second switch 10, and low-noise amplifier 15. Simultaneously with this reception, the transmitted signal of the first TDD signal is input from signal processing circuit 2 to external terminal 5d. Then, the transmitted signal is transmitted from antenna 3 to the outside via external terminal 5d, power amplifier 13, first filter 7, and first switch 6.

[0091] At this time, a portion of the transmitted signal of the first TDD signal leaks from the selection terminal 6e of the first switch 6 to the second filter 9. However, as described above, by setting the characteristic value of the first variable circuit element 12 to the second characteristic value, the frequency characteristic M2 of the second filter 9 is changed to the frequency characteristic M2a (refer to...). Figure 2 Therefore, interference with signals passing through the frequency bands (first transition band 72 and second transition band 92) of the frequency characteristic M2a of the second filter 9 and the frequency characteristic M11 of the first filter 7 is reduced. Consequently, the number of times a portion of the transmitted signal of the first TDD signal passes through the second filter 9 can be reduced. As a result, interference between the received signal of the second TDD signal that has passed through the second filter 9 and the transmitted signal of the first TDD signal can be reduced. That is, the degradation of receiver sensitivity when receiving the second TDD signal can be reduced, and communication quality can be improved.

[0092] Furthermore, when simultaneously receiving using the first communication band and transmitting using the second communication band, the first filter 8 is used as a receiving filter, and the second filter 9 is used as a transmitting filter. Also, in this case, similarly to the second case, the characteristic value of the first variable circuit element 12 is set to the second characteristic value, and the frequency characteristic M2 of the second filter 9 is changed to the frequency characteristic M2a. That is, interference between the transmitted signal of the second communication band passing through the second transition band 92 of the second filter 9 and the received signal of the first communication band passing through the first transition band 82 of the first filter 8 is reduced. Therefore, the occurrence of a portion of the transmitted signal of the second communication band passing through the second filter 9 can be reduced. As a result, the occurrence of the transmitted signal of the second communication band being mixed into the receiving path of the first communication band by passing through the second filter 9 can be reduced. That is, the degradation of receiving sensitivity during reception of the first communication band can be reduced, and communication quality can be improved.

[0093] (1-6) Effects

[0094] The high-frequency module 1 according to Embodiment 1 processes a first TDD signal in a first communication frequency band and a second TDD signal in a second communication frequency band adjacent to the first communication frequency band. The communication bandwidth of the first communication frequency band is wider than that of the second communication frequency band. The high-frequency module 1 includes first filters 7 and 8, a second filter 9, a first switch 6, a second switch 10, and a first variable circuit element 12. The first filters 7 and 8 have first passbands 71 ​​and 81 that include the first communication frequency band. The second filter 9 has a second passband 91 that includes the second communication frequency band. The first switch 6 is used to select the connection destination of each of the plurality of antenna terminals 5a to 5c from the first ends 7b and 17a of each of the filters of the first filters 7, 8, and the second filter 9. The second switch 10 is used to select the connection destination of the second end 17b of the second filter 9 from the first power amplifier 14 and the first low-noise amplifier 15. The first variable circuit element 12 is connected inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10, and is used to shift the second attenuation band 93 on the first passband 71 and 81 side of the second filter 9.

[0095] According to this structure, by using the first variable circuit element 12 to shift the second attenuation band 93 on the first passband 71, 81 side of the second filter 9, it is possible to reduce the interference between adjacent first and second communication bands and reduce the degradation of communication quality.

[0096] More specifically, when simultaneously transmitting using the first communication band and receiving using the second communication band, or simultaneously receiving using the first communication band and transmitting using the second communication band, the second attenuation band 93 on the first passband 71, 81 side of the second filter 9 is shifted towards the second passband 91 side by the first variable circuit element 12. This reduces leakage of the transmitted signal from the first or second communication band to the receiving path. Consequently, interference between the first and second communication bands is reduced. Furthermore, when communication is performed solely using the first or second communication band, the first variable circuit element 12 is not changed, and the filter characteristics are maintained. This reduces the insertion loss of the second TDD signal passing through the second filter 9. Consequently, the degradation of communication quality between the first and second communication bands is reduced.

[0097] Furthermore, the high-frequency module 1 according to Embodiment 1 also includes a variable matching circuit 11. The variable matching circuit 11 is connected between the second filter 9 and the second switch 10. The first variable circuit element 12 is disposed inside the variable matching circuit 11.

[0098] According to this structure, the number of components can be reduced, and there is no need to newly ensure the configuration location of the first variable circuit element 12.

[0099] The communication device 200 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency module 1 and performs signal processing on the high-frequency signal.

[0100] Based on this structure, a communication device 200 that functions as a high-frequency module 1 can be provided.

[0101] (1-7) Variations

[0102] A variation of Implementation 1 will be described.

[0103] In Embodiment 1, the case where the first variable circuit element 12 is disposed inside the variable matching circuit 11 is illustrated. However, the first variable circuit element 12 is not limited to being disposed inside the variable matching circuit 11; it can be disposed inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10. Furthermore, when the first variable circuit element 12 is disposed inside the second filter 9, the first variable circuit element 12 can also be constructed by replacing one of the multiple circuit components (capacitors, capacitors, and inductors) included in the second filter 9 with a variable circuit component that allows for variable characteristic values. According to this variation, the same effect as in Embodiment 1 can be achieved.

[0104] (2) Implementation Method 2

[0105] Reference Figure 3 The high-frequency module 1 involved in Implementation Method 2 will be described.

[0106] (2-1) Structure

[0107] The high-frequency module 1 in Embodiment 2 differs from that in Embodiment 1 in that it includes a second filter 20, which serves as a variable filter, instead of the second filter 9. Hereinafter, the same reference numerals will be used to denote structures identical to those in Embodiment 1, and the description will focus on structures different from those in Embodiment 1.

[0108] The second filter 20 is a variable filter obtained by replacing at least a portion of the circuit elements of the second filter 9 in Embodiment 1 with a variable circuit element (second variable circuit element 23). That is, the second filter 20 includes the second variable circuit element 23.

[0109] The second variable circuit element 23 is, for example, a variable capacitor, a variable inductor, or a variable resistor.

[0110] In the second filter 20, the frequency characteristics of the second filter 20 are changed by altering the characteristic value of the second variable circuit element 23. The characteristic value of the second filter 20 is changed by altering the characteristic value of the second variable circuit element 23. The characteristic value of the second variable circuit element 23 is controlled by a controller (not shown in the diagram).

[0111] The second filter 20, like the second filter 9 in Embodiment 1, has a second passband, a second transition band, and a second attenuation band. The second passband includes a second communication frequency band. The second transition band is the transition band on the side of the first passband (passband of the first filter 7) of the second passband. The second attenuation band is the attenuation band on the side of the first passband (passband of the first filter 7) of the second passband. In the second filter 20, by changing the characteristic value of the second variable circuit element 23, one or both of the second passband, the second transition band, and the second attenuation band of the second filter 20 are selectively brought closer to and further away from the first passband of the first filter 7.

[0112] More specifically, the frequency characteristics of the second filter 20 are similar to those of the second filter 9 in Embodiment 1, shifted towards the first passband or the second passband by changing the characteristic value of the first variable circuit element 12. At this time, by changing the characteristic value of the second variable circuit element 23, the second passband, the second transition band, or the second attenuation band of the second filter 20 are selectively shifted, thereby fine-tuning the frequency characteristics of the second filter 20.

[0113] More specifically, when communicating (e.g., receiving) using only the second communication frequency band, if the characteristic value of the first variable circuit element 12 is set to the first characteristic value, then the frequency characteristic M2 of the second filter 9 in Embodiment 1 (refer to...) Figure 2 Similarly, the overall frequency response of the second filter 20 (i.e., the second passband, the second transition band, and the second attenuation band) shifts towards the first passband. In this case, by further changing the characteristic value of the second variable circuit element 23, the second passband of the second filter 20 is not shifted; only the second attenuation band and the second transition band of the second filter 20 are selectively shifted towards the second passband (i.e., returned). As a result, in the frequency response of the second filter 20, as... Figure 2 Like the second passband 91, only the second passband is shifted towards the first passband side, such as Figure 2The second transition band 92a and the second attenuation band 93a are maintained on the second passband side. Therefore, when communicating (e.g., receiving) using the second communication band alone, similar to the first case described in Embodiment 1, the insertion loss of the second TDD signal (received) passing through the second filter 20 can be reduced. Furthermore, unwanted signal interference with the received second TDD signal can be reduced, thereby improving communication quality.

[0114] Furthermore, when simultaneously performing communication using the first communication band (e.g., transmitting) and communication using the second communication band (e.g., receiving), if the characteristic value of the first variable circuit element 12 is set to the second characteristic value, then the frequency characteristic M2a of the second filter 9 in Embodiment 1 (refer to...) Figure 2 Similarly, the frequency characteristics of the second filter 20 as a whole (i.e., the second passband, the second transition band, and the second attenuation band all) shift towards the second passband side. In this case, by further changing the characteristic value of the second variable circuit element 23, the second transition band and the second attenuation band of the second filter 20 are not shifted; only the second passband of the second filter 20 is selectively shifted towards the first passband side (i.e., returns). As a result, in the frequency characteristics of the second filter 20, such as Figure 2 Like the second transition band 92a and the second attenuation band 93a, only the second transition band and the second attenuation band are shifted towards the second passband side, such as Figure 2 The second passband 91 remains on the first passband side. Therefore, when simultaneously performing communication using the first communication band (e.g., transmission) and communication using the second communication band (e.g., reception), similar to the second case described in Embodiment 1, it is possible to reduce the mixing of a portion of the first TDD signal (transmit signal) into the second TDD signal when the second TDD signal (received signal) passes through the second filter 20. Furthermore, it is possible to reduce the insertion loss when the second TDD signal (received signal) passes through the second filter 20.

[0115] (2-2) Effects

[0116] The high-frequency module 1 according to embodiment 2 further includes a second variable circuit element 23. The second variable circuit element 23 constitutes the variable circuit element of the second filter 20, which is a variable filter. According to this structure, since the first variable circuit element 12 and the second variable circuit element 23 are included, the interference between adjacent first and second communication frequency bands can be further reduced, and the degradation of communication quality can be reduced.

[0117] (3) Implementation Method 3

[0118] Reference Figure 4 and Figure 5 The high-frequency module 1 involved in Implementation Method 3 will be described.

[0119] (3-1) Structure

[0120] like Figure 4 As shown, the high-frequency module 1 in Embodiment 3 is identical in structure to the high-frequency module 1 in Embodiment 2, except that the variable matching circuit 11 and the first variable circuit element 12 are arranged inside the second switch 10.

[0121] like Figure 5 As shown, the second switch 10 is identical in structure to the second switch 10 in Embodiment 2, except that it includes a variable matching circuit 11 and a first variable circuit element 12.

[0122] The variable matching circuit 11 includes variable capacitors C1 and C2, inductor L1, and switches SW1 to SW3.

[0123] Variable capacitors C1 and C2 respectively constitute the first variable circuit element 12. That is, in embodiment 2, the variable matching circuit 11 includes two first variable circuit elements 12 (variable capacitors C1 and C2).

[0124] Variable capacitor C1 has a first terminal and a second terminal. The first terminal of variable capacitor C1 is connected to the common terminal 10a of second switch 10 via switch SW1. The second terminal of variable capacitor C1 is connected to ground. Variable capacitor C2 has a first terminal and a second terminal. The first terminal of variable capacitor C2 is connected to the common terminal 10a of second switch 10 via switch SW2. The second terminal of variable capacitor C2 is connected to ground. Inductor L1 has a first terminal and a second terminal. The first terminal of inductor L1 is connected to the common terminal 10a of second switch 10 via switch SW3. The second terminal of inductor L1 is connected to ground.

[0125] In embodiment 3, variable capacitors C1 and C2 and switches SW1 to SW3 are disposed inside the second switch 10, while inductor L1 is disposed outside the second switch 10. However, inductor L1 may also be disposed inside the second switch 10.

[0126] Variable capacitors C1 and C2, along with inductor L1, constitute a resonant circuit that attenuates a specific frequency (resonant frequency). By changing the characteristic values ​​(capacitance values) of variable capacitors C1 and C2, the resonant frequency can be changed, or the resonant circuit can be switched between active and inactive states. Additionally, the active and inactive states of the resonant circuit can also be switched by turning switches SW1 to SW3 on and off.

[0127] For example, when the resonant circuit is activated to attenuate a specified frequency, switches SW1 to SW3 are switched on, and the capacitance values ​​of each variable capacitor C1 and C2 are changed to predetermined values. On the other hand, when the resonant circuit is deactivated, switches SW1 to SW3 can be switched off, and the capacitance values ​​of each variable capacitor C1 and C2 can be changed to specified values ​​(sufficiently large or sufficiently small values).

[0128] (3-2) Effects

[0129] In the high-frequency module 1 according to embodiment 3, the variable matching circuit 11 and the first variable circuit element 12 are disposed inside the second switch 10. Therefore, it is not necessary to newly secure the placement locations of the variable matching circuit 11 and the first variable circuit element 12. Furthermore, the high-frequency module 1 can be miniaturized.

[0130] (4) Implementation Method 4

[0131] Reference Figure 6 The high-frequency module 1 involved in Implementation 4 will be described.

[0132] (4-1) Structure

[0133] like Figure 6 As shown, the high-frequency module 1 in Embodiment 4 differs from that in Embodiment 3 in that it omits the first filters 7 and 8, the second filter 20, the second switch 10, and the second variable circuit element 23, and also includes multiple (in) Figure 6 The example only shows four) Third filter 30, multiple (in Figure 6 The example only shows four (four in total): fourth filter 40, second switch 60, and multiple (in...) Figure 6 In the example, there are four matching circuits 51 to 54.

[0134] In embodiment 4, a third filter selected from a plurality of third filters 30 and a fourth filter selected from a plurality of fourth filters 40 are used to construct the first filter 7, 8 or the second filter 20 of embodiment 2.

[0135] The high-frequency module 1 involved in embodiment 4 includes multiple external terminals 5a-5g, a first switch 6, a second switch 60, multiple third filters 30, multiple fourth filters 40, multiple matching circuits 51-54, and multiple (in Figure 6 In the example, there are two power amplifiers 13 and 14, and multiple (in...) Figure 6 In the example, there are two low-noise amplifiers, 15 and 16.

[0136] The external terminals 5a to 5g are the same as those in Embodiment 3, so detailed descriptions are omitted.

[0137] The first switch 6 is identical in structure to the first switch 6 in Embodiment 3, except for the increased number of selectable terminals. More specifically, the first switch 6 has multiple (in...) Figure 6 In the example, there are three) common terminals 6a~6c and multiple (in Figure 6 In this example, there are four select terminals 6d to 6g. Multiple common terminals 6a to 6c are selectively connected to one of the multiple select terminals 6d to 6g.

[0138] Multiple common terminals 6a-6c are connected to multiple external terminals 5a-5c respectively. Selection terminal 6d is connected to the common terminal 10a of the second switch 60 via a low-pass filter 31. Selection terminal 6e is connected to the common terminal 60b of the second switch 60 via a high-pass filter 32. Selection terminal 6f is connected to the common terminal 60c of the second switch 60 via a notch filter 33. Selection terminal 6g is connected to the common terminal 60d of the second switch 60 via a signal path 34.

[0139] The plurality of third filters 30 include at least one with mutually different characteristics (in) Figure 6 In the example, a low-pass filter 31, and at least one with different characteristics (in Figure 6 In this example, a high-pass filter of size 32 is used. Figure 6 In the diagram, only three third filters 31 to 33 are shown as multiple third filters 30, but in reality, it can also include third filters other than the three third filters 31 to 33.

[0140] Low-pass filter 31 is a low-pass filter corresponding to the second communication frequency band (e.g., n79). Low-pass filter 31 has a passband, a high-frequency transition band, and a high-frequency attenuation band. Low-pass filter 31 is, for example, a low-pass filter that extends the high-frequency attenuation band to the passband side by bringing the high-frequency transition band close to the upper limit frequency of the first communication frequency band.

[0141] The low-pass filter 31 has a first end and a second end. The first end of the low-pass filter 31 is connected to the selection terminal 6d of the first switch 6. The second end of the low-pass filter 31 is connected to the common terminal 60a of the second switch 60. The low-pass filter 31 removes high-frequency components higher than the passband from the signal input to one of the first end and the second end, and outputs the removed signal from the other of the first end and the second end.

[0142] The high-pass filter 32 is a high-pass filter corresponding to the first communication frequency band (e.g., n77). The high-pass filter 32 has a passband, a low-frequency transition band, and a low-frequency attenuation band. The high-pass filter 32 is, for example, a high-pass filter that extends the low-frequency attenuation band to the passband side by bringing the low-frequency transition band close to the lower limit frequency of the second communication frequency band.

[0143] The high-pass filter 32 has a first end and a second end. The first end of the high-pass filter 32 is connected to the selection terminal 6e of the first switch 6. The second end of the high-pass filter 32 is connected to the common terminal 60b of the second switch 60. The high-pass filter 32 removes low-frequency components lower than the passband from the signal input to one of the first and second ends, and outputs the removed signal from the other of the first and second ends.

[0144] Notch filter 33 is a filter that reduces a specific frequency, for example, by means of a resonant circuit. Notch filter 33 is connected between the selection terminal 6f of the first switch 6 and the common terminal 60c of the second switch 60. Notch filter 33 is, for example, a filter used in combination with high-pass filter 42 or 43 to further extend the attenuation band of the low-frequency side of high-pass filter 42 or 43 to the passband side (high-frequency side) of high-pass filter 42 or 43.

[0145] Signal path 34 is connected between the selection terminal 6g of the first switch 6 and the common terminal 60d of the second switch 60. Signal path 34 can be interpreted as a filter with an infinite passband. Signal path 34 is the path selected when it is not desired to select any of the multiple third filters 31-33.

[0146] The second switch 60 selects from the plurality of fourth filters 40 a connection target of one of the third filters 30 selected using the first switch 6. The second switch 60 has multiple (in Figure 6 In the example, there are four) common terminals 60a~60d and multiple (in Figure 6 In this example, there are four selection terminals 60f to 60i. Multiple common terminals 60a to 60d are selectively connected to one of the selection terminals 60f to 60i. Common terminal 60a is connected to selection terminal 6d of the first switch 6 via a low-pass filter 31. Common terminal 60b is connected to selection terminal 6e of the first switch 6 via a high-pass filter 32. Common terminal 60c is connected to selection terminal 6f of the first switch 6 via a notch filter 33. Common terminal 60d is connected to selection terminal 6g of the first switch 6 via signal path 34.

[0147] A first variable circuit element 12 is disposed inside the second switch 60. A second variable circuit element 23 is connected to a common terminal 60a. The second variable circuit element 23, in the same manner as in Embodiment 3, shifts the frequency characteristics of the second filter for transmitting and receiving, which will be described later.

[0148] The plurality of fourth filters 40 include at least one with mutually different characteristics (in) Figure 6 In the example, there are two low-pass filters 41 and 44, and at least one filter with different characteristics (in...). Figure 6 In the example, there are high-pass filters 42 and 43.

[0149] Low-pass filter 41 is a low-pass filter corresponding to the first communication frequency band (e.g., n77). Low-pass filter 41 has a passband, a high-frequency transition band, and a high-frequency attenuation band. Low-pass filter 41 is, for example, a low-pass filter that extends the passband to the high-frequency side by a certain width from the upper limit frequency of the first communication frequency band towards the high-frequency side, thus emphasizing low insertion loss.

[0150] The low-pass filter 41 has a first end and a second end. The first end of the low-pass filter 41 is connected to the selection terminal 60f of the second switch 60. The second end of the low-pass filter 41 is connected to the output of the power amplifier 13 via a matching circuit 51. The low-pass filter 41 removes high-frequency components higher than the passband from the signal input to the first end and outputs the removed signal from the second end.

[0151] High-pass filter 42 is a high-pass filter corresponding to the second communication frequency band (e.g., n79). High-pass filter 42 has a passband, a low-frequency transition band, and a low-frequency attenuation band. High-pass filter 42 is, for example, a low-insertion-loss high-pass filter that extends the passband to the low-frequency side by a certain width from the lower limit frequency of the second communication frequency band towards the low-frequency side.

[0152] The high-pass filter 42 has a first end and a second end. The first end of the high-pass filter 42 is connected to the selection terminal 60g of the second switch 60. The second end of the high-pass filter 42 is connected to the output of the power amplifier 14 via a matching circuit 52. The high-pass filter 42 removes low-frequency components below the passband from the signal input to the second end and outputs the removed signal from the first end.

[0153] High-pass filter 43 is a high-pass filter corresponding to the second communication frequency band (e.g., n79). High-pass filter 43 has a passband, a low-frequency transition band, and a low-frequency attenuation band. High-pass filter 43 is, for example, a low-insertion-loss high-pass filter that extends the passband to the low-frequency side by a certain width from the lower limit frequency of the second communication frequency band towards the low-frequency side.

[0154] Furthermore, the passband of high-pass filter 43 is wider (or smaller) than the passband of high-pass filter 42, thus becoming different characteristics.

[0155] The high-pass filter 43 has a first end and a second end. The first end of the high-pass filter 43 is connected to the selection terminal 60h of the second switch 60. The second end of the high-pass filter 43 is connected to the input of the low-noise amplifier 15 via a matching circuit 53. The high-pass filter 43 removes low-frequency components below the passband from the signal input to the second end and outputs the removed signal from the first end.

[0156] Low-pass filter 44 is a low-pass filter corresponding to the first communication frequency band (e.g., n77). Low-pass filter 41 has a passband, a high-frequency transition band, and a high-frequency attenuation band. Low-pass filter 41 is, for example, a low-pass filter that extends the passband to the high-frequency side by a certain width from the upper limit frequency of the first communication frequency band towards the high-frequency side, thus emphasizing low insertion loss.

[0157] Furthermore, the passband of low-pass filter 44 is wider (or smaller) than the passband of low-pass filter 41, thus becoming different characteristics.

[0158] The low-pass filter 44 has a first end and a second end. The first end of the low-pass filter 44 is connected to the selection terminal 60i of the second switch 60. The second end of the low-pass filter 44 is connected to the input of the low-noise amplifier 16 via the matching circuit 54. The low-pass filter 44 removes high-frequency components higher than the passband from the signal input to the first end and outputs the removed signal from the second end.

[0159] Matching circuit 51 is connected between low-pass filter 41 and power amplifier 13 to perform impedance matching between them. Matching circuit 52 is connected between high-pass filter 42 and power amplifier 14 to perform impedance matching between them. Matching circuit 53 is connected between high-pass filter 43 and low-noise amplifier 15 to perform impedance matching between them. Matching circuit 54 is connected between low-pass filter 44 and low-noise amplifier 16 to perform impedance matching between them.

[0160] Multiple power amplifiers 13 and 14 correspond one-to-one with two designated fourth filters 41 and 42 among multiple fourth filters 40. Additionally, multiple low-noise amplifiers 15 and 16 correspond one-to-one with two designated fourth filters 43 and 44 among multiple fourth filters 40.

[0161] The power amplifier 13 is constructed in the same manner as the power amplifier 13 in Embodiment 3. The power amplifier 13 has an input section and an output section. The input section of the power amplifier 13 is connected to an external terminal 5d. The output section of the power amplifier 13 is connected to the second terminal of the corresponding low-pass filter 41 via a matching circuit 51.

[0162] The power amplifier 14 is configured similarly to the power amplifier 14 in Embodiment 3. The power amplifier 14 has an input section and an output section. The input section of the power amplifier 14 is connected to an external terminal 5e. The output section of the power amplifier 14 is connected to the second end of a corresponding high-pass filter 43 via a matching circuit 52.

[0163] The low-noise amplifier 15 is configured similarly to the low-noise amplifier 15 in Embodiment 3. The low-noise amplifier 15 has an input section and an output section. The input section of the low-noise amplifier 15 is connected to the second end of the corresponding high-pass filter 43 via a matching circuit 53. The output section of the low-noise amplifier 15 is connected to an external terminal 5f.

[0164] The low-noise amplifier 16 is configured similarly to the low-noise amplifier 16 in Embodiment 3. The low-noise amplifier 16 has an input section and an output section. The input section of the low-noise amplifier 16 is connected to the second end of the corresponding low-pass filter 44 via a matching circuit 54. The output section of the low-noise amplifier 16 is connected to an external terminal 5g.

[0165] In Embodiment 4, a second filter for transmission with a passband including a second communication frequency band (e.g., n79) is constructed by combining a low-pass filter 31 and a high-pass filter 42. Similarly, a second filter for reception with a passband including a second communication frequency band (e.g., n79) is constructed by combining a low-pass filter 31 and a high-pass filter 43. Since the second filter for reception and the second filter for transmission share a common low-pass filter 31, they are filters that are partially compatible with both transmission and reception, corresponding to the second filter 20 for both transmission and reception in Embodiment 3.

[0166] Here, the second switch 60 has the function of selecting the third filter 30 and the fourth filter 40 constituting the second filter from the plurality of third filters 30 and the plurality of fourth filters 40, and the function of switching the second filter for transmitting or receiving.

[0167] In the second filter used for transmitting or receiving, when the characteristic value of the first variable circuit element 12 is the first characteristic value, the frequency characteristic of the second filter is adjusted by the first variable circuit element 12 as follows: Figure 2 The frequency characteristic M2 is shifted towards the passband side of the first communication frequency band (e.g., n77). Furthermore, in the second filter for transmission or reception, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the frequency characteristic of the second filter is shifted towards the passband side of the first communication frequency band (e.g., n77) by the first variable circuit element 12. Figure 2 The frequency characteristics of the second filter are shifted towards the passband side of the second communication band (e.g., n79), similar to those of M2a. In this case, to make the frequency characteristics of the second filter consistent with... Figure 2 If the frequency response M2a is further shifted towards the higher frequency side, a notch filter 33 can be selected instead of the low-pass filter 31, for example. Furthermore, the notch filter 33 has a specific frequency attenuation characteristic that attenuates the low-frequency side of the second communication frequency band (n79) near the lower limit frequency. By combining the notch filter 33 with a high-pass filter 42 or 43, the attenuation band of the low-frequency side of the second filter's frequency response is... Figure 2 The frequency response of M2a is further shifted towards the higher frequency side. However, in this case, the second filter is a high-pass filter.

[0168] In addition, by combining the high-pass filter 32 and the low-pass filter 41, a first filter for transmission with a passband including the first communication frequency band (e.g., n77) is constructed.

[0169] In addition, by combining the high-pass filter 32 and the low-pass filter 44, a first filter for receiving with a passband including the first communication frequency band (e.g., n77) is constructed.

[0170] (4-2) Operation of high frequency module 1

[0171] (4-2-1) Operation when using the second communication frequency band alone for communication

[0172] This describes the operation in the case of communication (e.g., reception) using only the second communication frequency band (first case). In the first case, in the first switch 6, for example, the common terminal 6b is connected to the selection terminal 6d, while the remaining common terminals 6a and 6c are not connected to the selection terminals 6d to 6g. Similarly, in the second switch 60, the common terminal 60a is connected to the selection terminal 60h, while the remaining common terminals 60a, 60c to 60d are not connected to the multiple selection terminals 60f to 60i. Through these connections, the low-pass filter 31 among the multiple third filters 30 is selected, and the high-pass filter 43 among the multiple fourth filters 40 is selected. Furthermore, the selected low-pass filter 31 and high-pass filter 43 are used to construct a second filter having a passband that includes the second communication frequency band (e.g., n79). Additionally, the characteristic value of the first variable circuit element 12 is taken as the first characteristic value, and the frequency characteristics of the second filter are as follows: Figure 2 The frequency characteristics of M2 are shifted towards the first communication band (e.g., n77).

[0173] In the above-described connection state, when antenna 3b receives the received signal (second TDD signal), the received signal is output to signal processing circuit 2 from external terminal 5f via first switch 6, low-pass filter 31, second switch 60, high-pass filter 43, matching circuit 53, and low-noise amplifier 15. At this time, the frequency characteristics of the second filter are as follows: Figure 2 The frequency characteristics of the second filter are shifted towards the first communication band (n77) as in M2, thus reducing the insertion loss of the received signal when passing through the second filter. That is, the communication quality of communication using only the second filter can be improved.

[0174] (4-2-2) Operation when communicating simultaneously using the first communication frequency band and the second communication frequency band

[0175] This describes the operation in the case where communication using the first communication band (e.g., transmission) and communication using the second communication band (e.g., reception) are performed simultaneously (the second case). In the second case, in the first switch 6, for example, common terminal 6a is connected to selection terminal 6e, common terminal 6b is connected to selection terminal 6d, and the remaining common terminal 6c is not connected to selection terminals 6d to 6g. Furthermore, in the second switch 60, common terminal 60a is connected to selection terminal 60h, common terminal 60b is connected to selection terminal 60f, and the remaining common terminals 60c and 60d are not connected to the multiple selection terminals 60f to 60i.

[0176] Through these connections, a high-pass filter 32 from a plurality of third filters 30 and a low-pass filter 41 from a plurality of fourth filters 40 are selected. Furthermore, the selected high-pass filter 32 and low-pass filter 41 are used to construct a first filter having a passband including a first communication frequency band (e.g., n77). Additionally, a low-pass filter 31 from a plurality of third filters 30 and a high-pass filter 43 from a plurality of fourth filters 40 are selected. Furthermore, the selected low-pass filter 31 and high-pass filter 43 are used to construct a second filter having a passband including a second communication frequency band (e.g., n79). Furthermore, the characteristic value of the first variable circuit element 12 is taken as a second characteristic value, and the frequency characteristic of the second filter 9 is as follows: Figure 2 The frequency characteristics of the first filter are shifted towards the second communication band (e.g., n79) as in the case of M2a. As a result, the overlap between the transition band of the first filter on the second communication band side and the transition band of the second filter on the first communication band side is reduced.

[0177] In this connected state, when antenna 3b receives a received signal (second TDD signal), the received signal is output from external terminal 5f to signal processing circuit 2 via first switch 6, low-pass filter 31, second switch 60, high-pass filter 43, matching circuit 53, and low-noise amplifier 15. Simultaneously with this reception, a transmitted signal (first TDD signal) is input from signal processing circuit 2 to external terminal 5d. Then, the transmitted signal is transmitted from antenna 3a to the outside via external terminal 5d, power amplifier 13, matching circuit 51, low-pass filter 41, second switch 60, high-pass filter 32, and first switch 6.

[0178] At this time, a portion of the transmitted signal leaks from the selection terminal 6d of the first switch 6 to the low-pass filter 31, the second switch 60, and the high-pass filter 43 (i.e., the second filter composed of the low-pass filter 31 and the high-pass filter 43). However, as described above, by setting the characteristic value of the first variable circuit element 12 to the second characteristic value, the frequency characteristics of the second filter are as follows: Figure 2 The frequency characteristics of the second filter are shifted towards the second communication frequency band, as in the case of M2a. Therefore, interference between the second filter and the first filter 7 in the transition band is reduced. Consequently, the amount of transmitted signal passing through the second filter is reduced. As a result, the amount of transmitted signal leaking into the second filter when the received signal passes through it is reduced, thus improving reception quality (communication quality).

[0179] (4-3) Effects

[0180] The high-frequency module 1 according to Embodiment 4 includes a plurality of third filters 30, a plurality of fourth filters 40, a plurality of low-noise amplifiers 15 and 16, and a plurality of power amplifiers 13 and 14. The plurality of third filters 30 includes at least one low-pass filter 31 and at least one high-pass filter 32. The plurality of fourth filters 40 includes at least one low-pass filter 41 and 44 and at least one high-pass filter 42 and 43. The plurality of low-noise amplifiers 15 and 16 include a first low-noise amplifier 15. The plurality of power amplifiers 13 and 14 include a first power amplifier 14. The plurality of low-noise amplifiers 15 and 16 are respectively connected to corresponding fourth filters 43 and 44 of the plurality of fourth filters 40. The plurality of power amplifiers 13 and 14 are respectively connected to corresponding fourth filters 41 and 42 of the plurality of fourth filters 40. A first switch 6 is used to select the connection destination of each of the plurality of antenna terminals 5a-5c from the plurality of third filters 30. A second switch 60 selects the connection destination of the third filter selected by the first switch 6 from the plurality of fourth filters 40. When receiving using the second communication frequency band, a second filter is constructed by one third filter 31 selected by the first switch 6 from among the multiple third filters 30, and a fourth filter 43 selected by the second switch 60 from among the multiple fourth filters 40 and connected to the first low-noise amplifier 15. When transmitting using the second communication frequency band, a second filter is constructed by one third filter 31 selected by the first switch 6 from among the multiple third filters 30, and a fourth filter 42 selected by the second switch 60 from among the multiple fourth filters 40 and connected to the first power amplifier 14. When transmitting or receiving using the first communication frequency band, first filters 7 and 8 are constructed by another third filter 32 selected by the first switch 6 from among the multiple third filters 30, and fourth filters 41 and 44 selected by the second switch 60 from among the multiple fourth filters 40 and connected to a power amplifier 13 different from the first power amplifier 14 or a low-noise amplifier 16 different from the first low-noise amplifier 15.

[0181] According to this structure, the first filter 7, 8 and the second filter 20 of Embodiment 3 can be constructed by combining the third filter 30 selected by the first switch 6 and the fourth filter 40 selected by the second switch 60, and their frequency characteristics can be changed.

[0182] (4-4) Variation Example

[0183] A variation of embodiment 4 will be described.

[0184] (4-4-1) Variation Example 1

[0185] Regarding the high-frequency module 1 involved in Embodiment 4, the following example is provided: it includes a set (referred to as group G1) of multiple third filters 31-33, a second switch 60, multiple fourth filters 40, multiple matching circuits 51-54, power amplifiers 13 and 14, and low-noise amplifiers 15 and 16. However, as Figure 7 As shown, regarding the high-frequency module 1 involved in Modification Example 1, the high-frequency module 1 involved in Embodiment 4 also includes another group (referred to as group G2) with the same structure as group G1. That is, the high-frequency module 1 involved in Modification Example 1 includes multiple groups (in Figure 7 In the example, there are two sets of G1 and G2) multiple third filters 30, second switches 60, multiple fourth filters 40, multiple matching circuits 51 to 54, power amplifiers 13 and 14, and low-noise amplifiers 15 and 16.

[0186] Regarding the high-frequency module 1 of Modified Example 1, the high-frequency module 1 of Embodiment 4 also includes a plurality of external terminals 5h to 5k.

[0187] External terminal 5h is connected to the output of signal processing circuit 2 and receives the transmitted signal (first TDD signal) output from signal processing circuit 2. External terminal 5i is connected to the output of signal processing circuit 2 and receives the transmitted signal (second TDD signal) output from signal processing circuit 2. External terminal 5j is connected to the input of signal processing circuit 2 and receives the received signal (second TDD signal) output from high-frequency module 1. External terminal 5k is connected to the input of signal processing circuit 2 and receives the received signal (first TDD signal) output from high-frequency module 1.

[0188] Regarding the first switch 6 of Modification Example 1, the first switch in Embodiment 4 also includes selection terminals 6i~6k, 6m.

[0189] The first ends of the multiple third filters 30 of group G2 are respectively connected to the multiple selection terminals 6i~6k, 6m of the first switch 6. The input sections of the multiple power amplifiers 13, 14 and the output sections of the multiple low-noise amplifiers 15, 16 of group G2 are respectively connected to the multiple external terminals 5h~5k.

[0190] The high-frequency module 1 involved in Modification 1 has multiple groups, namely groups G1 and G2, each including a second switch 60, a first variable circuit element 12, multiple third filters 30, and multiple fourth filters 40. According to this structure, multiple receptions or multiple transmissions can be performed simultaneously using the same communication frequency band.

[0191] (5) Implementation Method 5

[0192] (5-1) Structure

[0193] Reference Figure 8 and Figure 9 The high-frequency module 1 involved in Implementation 5 will be described.

[0194] In Embodiment 5, an example of the configuration relationship of the constituent elements of the high-frequency module 1 involved in Embodiment 4 will be described.

[0195] like Figure 8 As shown, the high-frequency module 1 according to embodiment 5, in addition to having the structure of the high-frequency module 1 according to embodiment 4, also has a mounting substrate 70.

[0196] In embodiment 5, the plurality of third filters 31-33 are, for example, LC filters or elastic wave filters. Additionally, the plurality of fourth filters 41-44 are, for example, LC filters.

[0197] The mounting substrate 70 is, for example, flat. The mounting substrate 70 is, for example, a resin multilayer substrate. In addition, the mounting substrate 70 is not limited to a resin multilayer substrate, and may also be, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) substrate, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0198] The mounting substrate 70 is, for example, a multilayer substrate comprising multiple dielectric layers (insulating layers) and multiple conductive layers. Multiple conductive layers are disposed between the multiple dielectric layers. That is, the multiple dielectric layers and multiple conductive layers are alternately stacked in the thickness direction D1 of the mounting substrate 70. The multiple conductive layers are formed in a predetermined pattern according to a specified pattern for each layer.

[0199] The mounting substrate 70 has a first main surface 70a and a second main surface 70b. The first main surface 70a and the second main surface 70b are main surfaces facing each other in the thickness direction D1 of the mounting substrate 70.

[0200] The first main surface 70a is configured with a structure including, for example, a first switch 6, a second switch 60, a plurality of third filters 30, a plurality of fourth filters 40, a plurality of matching circuits 51-54, a plurality of power amplifiers 13, 14, and a plurality of low-noise amplifiers 15, 16. Figure 8 In the example, only the first switch 6, the fourth filter 41, the power amplifier 13, and the matching circuit 51 are illustrated. Figure 9 In the example, only the first switch 6, the third filter 31, and the fourth filter 41 are illustrated.

[0201] A second switch 60 is disposed on the second main surface 70b. A first variable circuit element 12 is disposed inside the mounting substrate 70. In embodiment 4, the first variable circuit element 12 is disposed within the second switch 60, but in embodiment 5, the first variable circuit element 12 is disposed inside the mounting substrate 70.

[0202] The second switch 60 is disposed on the second main surface 70b of the mounting substrate 70. When viewed from the thickness direction D1 of the mounting substrate 70, the second switch 60 overlaps with at least a portion of the first switch 6 (see reference). Figure 9 This shortens the wiring between the first switch 6 and the second switch 60.

[0203] The first variable circuit element 12 is disposed inside the mounting substrate 70, and when viewed from the thickness direction D1 of the mounting substrate 70, the first variable circuit element 12 overlaps with both the first switch 6 and the second switch 60 (see reference). Figure 9 That is, when viewed from the thickness direction D1 of the mounting substrate 70, the first variable circuit element 12 overlaps with at least a portion of the first switch 6 and at least a portion of the second switch 60. This allows for shorter wiring connections between the first switch 6 and the second switch 60 and the first variable circuit element 12.

[0204] (5-2) Effects

[0205] The high-frequency module 1 according to embodiment 5 further includes a mounting substrate 70. The mounting substrate 70 has a first main surface 70a and a second main surface 70b facing each other. A first switch 6 is disposed on the first main surface 70a of the mounting substrate 70. A second switch 60 is disposed on the second main surface 70b of the mounting substrate 70, and when viewed from the thickness direction D1 of the mounting substrate 70, the second switch 60 overlaps with at least a portion of the first switch 6. A first variable circuit element 12 is disposed on the mounting substrate 70.

[0206] According to this structure, the connection wiring between the first switch 6 and the second switch 60 can be shortened. Therefore, the number of cases where the aforementioned connection wiring constitutes a resonant circuit can be reduced. As a result, the frequency variations of the first TDD signal and the second TDD signal caused by the aforementioned resonant circuit can be reduced.

[0207] Furthermore, in the high-frequency module 1 according to embodiment 5, the first variable circuit element 12 is disposed inside the mounting substrate 70. When viewed from above in the thickness direction D1 of the mounting substrate 70, the first variable circuit element 12 overlaps with at least a portion of the first switch 6 and at least a portion of the second switch 60.

[0208] According to this structure, the connection wiring between the first switch 6 and the second switch 60 and the first variable circuit element 12 can be shortened. As a result, the frequency variations of the first TDD signal and the second TDD signal caused by the resonant circuit formed by the aforementioned connection wiring can be reduced.

[0209] (5-3) Variation Example

[0210] A variation of embodiment 5 will be described. The following variations can be implemented in combination.

[0211] (5-3-1) Variation Example 1

[0212] In embodiment 5, the first variable circuit element 12 is illustrated as being disposed inside the mounting substrate 70. However, the first variable circuit element 12 may also be disposed on the first main surface 70a or the second main surface 70b of the mounting substrate 70. According to this structure, when the first variable circuit element 12 is disposed on the first main surface 70a or the second main surface 70b of the mounting substrate 70, the connection wiring between the first switch 6 and the second switch 60 can be shortened.

[0213] Alternatively, when the first variable circuit element 12 is disposed on the first main surface 70a or the second main surface 70b of the mounting substrate 70, the first variable circuit element 12 may also be disposed inside an electronic component (e.g., a filter, a matching circuit, a switch, etc.) disposed on the first main surface 70a or the second main surface 70b of the mounting substrate 70.

[0214] In addition, embodiments 1 to 5 and their variations can be combined for implementation.

[0215] Explanation of reference numerals in the attached figures

[0216] 1: High-frequency module; 2: Signal processing circuit; 3, 3a~3c: Antenna; 5a~5c: External terminals (antenna terminals); 5d~5k: External terminals; 6: First switch; 6a~6c: Common terminals; 6d~6k, 6m: Selection terminals; 7, 8: First filter; 7a: Input section (first end); 7b: Output section; 9: Second filter; 10: Second switch; 10a: Common terminal; 10b, 10c: Selection terminals; 11: Variable matching circuit; 12: First variable circuit element; 13: Power amplifier; 13a 13a: Input section; 14b: Output section; 15: Power amplifier (first power amplifier); 16: Low noise amplifier (first low noise amplifier); 17a: Input section; 18b: Output section; 19: Duplexer; 10a: First input / output section (first end); 11b: Second input / output section (second end); 12c: Output section; 23a: Second filter; 24: RF signal processing circuit; 25: Baseband signal processing Circuit; 23: Second variable circuit element; 30: Third filter; 31: Low-pass filter; 32: High-pass filter; 33: Notch filter; 34: Signal path; 40: Fourth filter; 41: Low-pass filter; 42: High-pass filter; 43: High-pass filter; 44: Low-pass filter; 51~54: Matching circuit; 60: Second switch; 60a~60d: Common terminal; 60f~60i: Selection terminal; 70: Mounting substrate; 70a: First main surface; 70b: Second main surface; 71, 81: First passband; 72, 8 2: First transition band; 73, 83: First attenuation band; 91, 91a: Second passband; 92, 92a: Second transition band; 93, 93a: Second attenuation band; 200: Communication device; C1, C2: Variable capacitor; D1: Thickness direction; fp: Peak frequency; G1, G2: Group; K1: First boundary frequency; K2: Second boundary frequency; K3: Frequency band; L1: Inductor; M11, M12, M2, M2a: Frequency characteristics; N2: Zero point; Q1: Frequency characteristics; SW1~SW3: Switches.

Claims

1. A high-frequency module for processing a first TDD signal in a first communication frequency band and a second TDD signal in a second communication frequency band adjacent to the first communication frequency band, wherein the passband of the first communication frequency band is wider than the passband of the second communication frequency band, the high-frequency module comprising: A first filter having a first passband that includes the first communication frequency band; The second filter has a second passband that includes the second communication frequency band; A first switch is used to select the connection destination of each of a plurality of antenna terminals from the first ends of each of the first and second filters. A second switch is used to select the connection destination of the second end of the second filter from the first power amplifier and the first low-noise amplifier; as well as A first variable circuit element, connected inside the second filter, inside the second switch, or between the second filter and the second switch, is used to shift the attenuation band of the first passband side of the second filter.

2. The high-frequency module according to claim 1, wherein, It also includes a variable matching circuit connected between the second filter and the second switch. The first variable circuit element is disposed inside the variable matching circuit.

3. The high-frequency module according to claim 1 or 2, wherein, It also features a second variable circuit element. The second variable circuit element constitutes the variable circuit element of the second filter, which is a variable filter.

4. The high-frequency module according to any one of claims 1 to 3, wherein, have: A plurality of third filters, the plurality of third filters including at least one low-pass filter and one high-pass filter; A plurality of fourth filters, the plurality of fourth filters including at least one low-pass filter and at least one high-pass filter; A plurality of low-noise amplifiers, wherein the plurality of low-noise amplifiers includes the first low-noise amplifier; as well as Multiple power amplifiers, the multiple power amplifiers including the first power amplifier, The plurality of low-noise amplifiers are respectively connected to the corresponding fourth filter among the plurality of fourth filters. The plurality of power amplifiers are respectively connected to the corresponding fourth filter among the plurality of fourth filters. The first switch is used to select the connection destination of each of the plurality of antenna terminals from the plurality of third filters. The second switch is used to select, from the plurality of fourth filters, the connection destination of the third filter selected by the first switch among the plurality of third filters. When receiving data using the second communication frequency band, the second filter is constructed from one of the plurality of third filters selected by the first switch, and the fourth filter selected by the second switch and connected to the first low-noise amplifier. When transmitting using the second communication frequency band, the second filter is composed of one third filter selected by the first switch from the plurality of third filters, and a fourth filter selected by the second switch from the plurality of fourth filters and connected to the first power amplifier. When transmitting or receiving using the first communication frequency band, the first filter is formed by another third filter selected by the first switch from the plurality of third filters, and a fourth filter selected by the second switch from the plurality of fourth filters and connected to a power amplifier different from the first power amplifier or a low noise amplifier different from the first low noise amplifier.

5. The high-frequency module according to claim 4, wherein, It has multiple sets including the second switch, the first variable circuit element, the multiple third filters, and the multiple fourth filters.

6. The high-frequency module according to any one of claims 1 to 5, wherein, It also includes a mounting substrate, which has a first main surface and a second main surface facing each other. The first switch is disposed on the first main surface of the mounting substrate. The second switch is disposed on the second main surface of the mounting substrate, and when viewed from the thickness direction of the mounting substrate, the second switch overlaps with at least a portion of the first switch. The first variable circuit element is disposed on the mounting substrate.

7. The high-frequency module according to claim 6, wherein, The first variable circuit element is disposed inside the mounting substrate, and when viewed from the thickness direction of the mounting substrate, the first variable circuit element overlaps with at least a portion of the first switch and at least a portion of the second switch.

8. The high-frequency module according to claim 6, wherein, The first variable circuit element is disposed on the first main surface or the second main surface of the mounting substrate.

9. A communication device comprising: The high-frequency module according to any one of claims 1 to 8; and A signal processing circuit, which is connected to the high-frequency module, performs signal processing on the high-frequency signal.

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