Display device

Abstract

According to an aspect of the present disclosure, a display device includes: a first substrate; a planarization layer disposed on the first substrate and including a first top surface, a second top surface lower than the first top surface, and an inclined surface; a first reflective electrode at least partially disposed on the inclined surface of the planarization layer; a light emitting element on the first reflective electrode; and a second reflective electrode provided to cover the light emitting element. The light emitting element is disposed on any one of the first top surface and the second top surface. Accordingly, the first reflective electrode is provided on the inclined surface to more easily extract light emitted from the light emitting element to the outside.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0157746, filed with the Korean Intellectual Property Office on November 8, 2024, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, and more specifically, to display devices using light-emitting elements (LEDs). Background Technology

[0004] As display devices used for computer monitors, televisions, or cellular phones, there are organic light-emitting display devices (OLEDs) that are self-emissive and liquid crystal display devices (LCDs) that require a separate light source.

[0005] The applications of display devices have diversified to personal digital assistants, computer monitors, and televisions, and research is underway on display devices with large display areas and reduced size and weight.

[0006] Furthermore, in recent years, LED display devices have garnered attention as the next generation of display devices. Because LEDs are formed from inorganic rather than organic materials, they offer superior reliability, resulting in a longer lifespan than liquid crystal displays or organic light-emitting diode displays. In addition, LEDs feature fast turn-on speed, excellent luminous efficiency, and strong shock resistance, leading to excellent stability and the ability to display high-brightness images. Summary of the Invention

[0007] The purpose of this disclosure is to provide a display device comprising an inorganic light-emitting element with excellent luminous efficiency driven at low power.

[0008] Another objective of this disclosure is to provide a display device with improved light conversion efficiency and improved light extraction efficiency.

[0009] Another objective of this disclosure is to provide a display device in which the thickness of the light conversion layer can be easily controlled.

[0010] Another objective of this disclosure is to provide a display device that improves light extraction efficiency by forming an irregular structure in the region where light emitted from the light-emitting element is released.

[0011] The purpose of this disclosure is not limited to the purposes mentioned above, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0012] According to one aspect of this disclosure, a display device includes: a first substrate; a planarization layer disposed on the first substrate and including a first top surface, a second top surface with a height lower than the first top surface, and a sloped surface; a first reflective electrode at least partially disposed on the sloped surface of the planarization layer; a light-emitting element disposed on the first reflective electrode; and a second reflective electrode disposed to cover the light-emitting element. The light-emitting element is disposed on either the first top surface or the second top surface. Therefore, the first reflective electrode is disposed on the sloped surface to more easily extract light emitted from the light-emitting element to the outside.

[0013] Further details of the exemplary implementation are included in the detailed implementation and the accompanying drawings.

[0014] According to this disclosure, a high-resolution display device can be realized, which includes inorganic light-emitting elements with excellent luminous efficiency to display images with high efficiency and high brightness at low power.

[0015] According to this disclosure, reflective electrodes are formed above and below the light-emitting element and the light conversion layer to improve light conversion efficiency and light extraction efficiency.

[0016] According to this disclosure, an inclined surface is formed in the region where the light conversion layer is disposed, so as to easily control the thickness of the light conversion layer.

[0017] According to this disclosure, irregular structures are formed in the region where light is emitted to improve light extraction efficiency.

[0018] The effects of this disclosure are not limited to those illustrated above, and this specification includes many more effects. Attached Figure Description

[0019] The above and other aspects, features, and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0020] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure;

[0021] Figure 2A This is a partial cross-sectional view of a display device according to an exemplary embodiment of the present disclosure;

[0022] Figure 2B This is a perspective view of a tiling display device according to an exemplary embodiment of the present disclosure;

[0023] Figure 3 This is an enlarged plan view of a display device according to an exemplary embodiment of the present disclosure;

[0024] Figure 4 This is a cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure;

[0025] Figure 5A and Figure 5B This is a view showing the arrangement of the light-emitting element, the first reflective electrode, the second reflective electrode, and the embankment in each of the display devices according to the comparative embodiment and the exemplary embodiment;

[0026] Figure 6 It is a graph showing the light conversion efficiency of each display device according to the angle in the display devices according to the comparative embodiment and the exemplary embodiment;

[0027] Figure 7 It is a graph showing the light conversion efficiency based on the thickness of the light conversion layer;

[0028] Figure 8 This is an enlarged plan view of a display device according to another exemplary embodiment of the present disclosure;

[0029] Figure 9 This is an enlarged plan view of a display device according to yet another exemplary embodiment of the present disclosure;

[0030] Figure 10 This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0031] Figure 11 This is an enlarged plan view of a display device according to yet another exemplary embodiment of the present disclosure; and

[0032] Figure 12 This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure. Detailed Implementation

[0033] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become clear from the exemplary embodiments described in detail below, together with the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. Exemplary embodiments are provided by way of example only so that those skilled in the art can fully understand the disclosure and scope of this disclosure.

[0034] The shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, similar reference numerals generally denote similar elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0035] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0036] When using terms such as “on top of,” “above,” “below,” and “next to” to describe the positional relationship between two parts, one or more parts may be positioned between the two parts unless these terms are used with the terms “immediately following” or “directly.”

[0037] When an element or layer is placed "on" other elements or layers, another layer or element can be directly inserted on or between the other elements or layers.

[0038] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component referred to below may be the second component in the technical concept of this disclosure.

[0039] Throughout the specification, similar reference numerals generally denote similar elements.

[0040] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, and this disclosure is not limited to the dimensions and thickness of the components shown.

[0041] Features of various embodiments of this disclosure may be partially or completely dependent on or combined with each other and may be associated and operated in technically different ways, and the embodiments may be performed independently of each other or in relation to each other.

[0042] In the following, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0043] Figure 1 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. Figure 1For ease of description, among the various components of the display device 100, only the display panel PN, gate driver GD, data driver DD, and timing controller TC are shown.

[0044] Reference Figure 1 The display device 100 includes: a display panel PN comprising a plurality of sub-pixels SP; a gate driver GD and a data driver DD supplying various signals to the display panel PN; and a timing controller TC for controlling the gate driver GD and the data driver DD.

[0045] The gate driver GD supplies multiple scan signals to multiple scan lines SL based on multiple gate control signals supplied from the timing controller TC. Although in Figure 1 The diagram shows a gate driver GD configured to be spaced apart from one side of the display panel PN, but the number of gate drivers GDs and their arrangement are not limited to this.

[0046] The data driver DD supplies data voltage to multiple data lines DL based on multiple data control signals and image data supplied from the timing controller TC. The data driver DD can use a reference gamma voltage to convert image data into data voltage and supply the converted data voltage to the multiple data lines DL.

[0047] The timing controller TC aligns externally input image data to supply the image data to the data driver DD. The timing controller TC can use externally input synchronization signals such as dot clock signals, data enable signals, and horizontal / vertical synchronization signals to generate gate control signals and data control signals. The timing controller TC supplies the generated gate control signals and data control signals to the gate driver GD and the data driver DD, respectively, to control the gate driver GD and the data driver DD.

[0048] The display panel PN is a configuration for displaying images to the user and includes multiple subpixels SP. In the display panel PN, multiple scan lines SL and multiple data lines DL intersect each other, and multiple subpixels SP can be formed at the intersection of scan lines SL and data lines DL.

[0049] In the display panel PN, active area AA and non-active area NA can be defined.

[0050] The active area AA is the area in the display device 100 where an image is displayed. Within the active area AA, multiple sub-pixels SP constituting multiple pixels PX and pixel circuits for driving the multiple sub-pixels SP can be provided. The multiple sub-pixels SP are the smallest units constituting the active area AA, and n sub-pixels SP can form one pixel PX. In each of the multiple sub-pixels SP, a thin-film transistor for driving multiple light-emitting elements 120 can be provided. The multiple light-emitting elements 120 can be defined in different ways depending on the type of the display panel PN. For example, when the display panel PN is an inorganic light-emitting display panel PN, the light-emitting elements 120 can be light-emitting diodes (LEDs) or miniature light-emitting diodes (miniature LEDs).

[0051] In the active region AA, multiple signal lines are provided to transmit various signals to multiple sub-pixels SP. For example, the multiple signal lines may include multiple data lines DL supplying data voltage to each of the multiple sub-pixels SP and multiple scan lines SL supplying scan signals to each of the multiple sub-pixels SP. The multiple scan lines SL extend in one direction in the active region AA to connect to the multiple sub-pixels SP, and the multiple data lines DL extend in the active region AA in a direction different from the stated one direction to connect to the multiple sub-pixels SP. In addition, low-potential power lines PL and high-potential power lines PL may also be provided in the active region AA, but are not limited thereto.

[0052] The non-active region NA is the area where no image is displayed, allowing it to be defined as an area extending from the active region AA. Within the non-active region NA, links, pad electrodes, or driver ICs, such as gate driver ICs or data driver ICs, can be provided to transmit signals to the sub-pixels SP of the active region AA.

[0053] Meanwhile, the non-active region NA can be located on the rear surface of the display panel PN, that is, on a surface on which no sub-pixels SP are provided or on which sub-pixels SP can be omitted, and is not limited to what is shown in the accompanying drawings.

[0054] Meanwhile, drivers such as gate driver GD, data driver DD, and timing controller TC can be connected to the display panel PN in various ways. For example, the gate driver GD can be installed in the non-active area NA as a gate in panel (GIP), or installed between multiple sub-pixels SP in the active area AA as a gate in active area (GIA).

[0055] For example, the data driver DD and the timing controller TC are formed in separate flexible films and printed circuit boards. The display panel PN can be electrically connected to the data driver DD and the timing controller TC by bonding the flexible film and the printed circuit board to pad electrodes formed in the non-active region NA of the display panel PN.

[0056] As another example, when the gate driver GD is mounted in the active area AA in a GIA configuration and forms a side line SRL connecting the signal lines on the front surface of the display panel PN to the pad electrodes on the rear surface of the display panel PN to bond the flexible film and printed circuit board to the rear surface of the display panel PN, the non-active area NA on the front surface of the display panel PN can be minimized. Therefore, when the gate driver GD, data driver DD, and timing controller TC are connected to the display panel PN as described above, a virtually bezel-less design can be achieved, which will refer to... Figure 2A and Figure 2B To describe in more detail.

[0057] Figure 2A This is a partial cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Figure 2B This is a perspective view of a tiled display device according to an exemplary embodiment of the present disclosure.

[0058] In the non-active area NA of the display panel PN, multiple pad electrodes are provided for transmitting various signals to multiple sub-pixels SP. For example, in the non-active area NA on the front surface of the display panel PN, a first pad electrode PAD1 is provided to transmit signals to multiple sub-pixels SP. In the non-active area NA on the rear surface of the display panel PN, a second pad electrode PAD2 is provided, which is electrically connected to driving components such as flexible films and printed circuit boards.

[0059] In this case, although not shown in the accompanying drawings, various signal lines such as scan lines SL or data lines DL connected to multiple sub-pixels SP extend from the active region AA to the non-active region NA to be electrically connected to the first pad electrode PAD1.

[0060] A side line SRL is disposed along the side surface of the display panel PN. The side line SRL can electrically connect a first pad electrode PAD1 on the front surface of the display panel PN to a second pad electrode PAD2 on the rear surface of the display panel PN. Therefore, signals from the driving components on the rear surface of the display panel PN can be transmitted to multiple sub-pixels SP through the second pad electrode PAD2, the side line SRL, and the first pad electrode PAD1. Thus, a signal transmission path is formed from the front surface to the side and rear surfaces of the display panel PN, minimizing the area of ​​the non-active region NA on the front surface of the display panel PN.

[0061] Reference Figure 2B A large-screen tiled display device TD can be achieved by connecting multiple display devices 100. In this case, such as... Figure 2A As shown, when a tiled display device TD is implemented using a display device 100 with a minimized bezel, the seam area where no image is displayed between the display devices 100 is minimized, thereby improving the display quality.

[0062] For example, multiple sub-pixels SP can form a pixel PX, and the distance D1 between the outermost pixel PX of one display device 100 and the outermost pixel PX of another display device 100 adjacent to the one display device can be made equal to the distance D1 between pixels PX in one display device 100. Therefore, the spacing of pixels PX between display devices 100 is constantly configured to minimize the seam area.

[0063] However, Figure 2A and Figure 2B This is illustrative, so that the display device 100 according to the exemplary embodiments of this disclosure may be a general display device with a bezel, but is not limited thereto.

[0064] In the following text, reference will be made to Figure 3 and Figure 4 The sub-pixels SP of the display panel PN of the display device 100 according to an exemplary embodiment of the present disclosure are described in more detail.

[0065] Figure 3 This is an enlarged plan view of a display device according to an exemplary embodiment of the present disclosure. Figure 4 This is a cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present disclosure. Figure 3 For ease of description, only multiple light-emitting elements 120, multiple sub-pixels SP, embankment BNK, and multiple light conversion layers CCL are shown. Figure 3 The arrows in the diagram indicate the direction in which light is emitted from each sub-pixel SP.

[0066] Reference Figure 3 and Figure 4 Multiple subpixels SP are disposed in the active region AA. Each of the multiple subpixels SP may include a light-emitting element 120 and emit light independently. The multiple subpixels SP can be arranged into a matrix by forming multiple rows and multiple columns, but exemplary embodiments of this disclosure are not limited thereto.

[0067] A pixel PX may include multiple sub-pixels SP, and the multiple sub-pixels SP may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. For example, a pixel PX may include a pair of first sub-pixels SP1, a pair of second sub-pixels SP2, and a pair of third sub-pixels SP3. For example, any one of the first sub-pixels SP1, the second sub-pixels SP2, and the third sub-pixel SP3 may be a red sub-pixel, another may be a green sub-pixel, and the third may be a blue sub-pixel. For example, the first sub-pixel SP1 may be a blue sub-pixel SP, the second sub-pixel SP2 may be a red sub-pixel SP, and the third sub-pixel SP3 may be a green sub-pixel SP. The types of multiple sub-pixels SP are illustrative, but exemplary embodiments of this disclosure are not limited thereto.

[0068] Reference Figure 4 The first substrate 110 may be a component supporting other parts of the display device 100, and may be an insulating substrate. For example, the first substrate 110 may be formed of glass or resin. Furthermore, the first substrate 110 may be formed of a polymer or plastic, and in some exemplary embodiments, the first substrate 110 may be formed of a flexible plastic material. Multiple pixels PX, each including multiple sub-pixels SP, are formed on the first substrate 110 to display an image.

[0069] A light-shielding layer BSM is disposed on the first substrate 110 in each of the plurality of sub-pixels SP. The light-shielding layer BSM blocks light incident on the active layer ACT of the driving transistor DT to minimize leakage current. For example, the light-shielding layer BSM is disposed below the active layer ACT of the driving transistor DT to block light incident on the active layer ACT. If light shines on the active layer ACT, leakage current is generated, which degrades the reliability of the driving transistor DT. Therefore, the light-blocking layer BSM is disposed on the first substrate 110 to improve the reliability of the driving transistor DT. The light-shielding layer BSM may be made of an opaque conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0070] A buffer layer 111 is disposed on the first substrate 110 and the light-shielding layer BSM. The buffer layer 111 is configured to cover one surface of the first substrate 110 to reduce the penetration of moisture or impurities through the first substrate 110. The buffer layer 111 may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. Depending on the type of the first substrate 110 or the type of transistor, the buffer layer 111 may be omitted, but is not limited thereto.

[0071] A driving transistor DT is disposed on the buffer layer 111 in each of the plurality of sub-pixels SP. The driving transistor DT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. Meanwhile, although not shown in the figure, other components, such as a switching transistor, a sensing transistor, an emitter control transistor, and a storage capacitor, may be disposed in each of the plurality of sub-pixels SP in addition to the driving transistor DT.

[0072] The active layer ACT of the driving transistor DT is disposed on the buffer layer 111. The active layer ACT can be configured to overlap with the light-shielding layer BSM. The active layer ACT can be formed of a semiconductor material such as oxide semiconductor, amorphous silicon, or polycrystalline silicon, but is not limited thereto. Furthermore, although not shown in the figure, the active layer ACT of another transistor, such as a switching transistor, a sensing transistor, and an emitter control transistor, can also be formed of a semiconductor material such as oxide semiconductor, amorphous silicon, or polycrystalline silicon, but is not limited thereto. The active layers ACT of the driving transistor DT, the switching transistor, the sensing transistor, and the emitter control transistor can be formed of the same material or different materials.

[0073] A gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 is a layer used to insulate the active layer ACT from the gate electrode GE. For example, the gate insulating layer 112 may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. At the same time, although the gate insulating layer 112 is shown in the figure as being disposed only below the gate electrode GE, the gate insulating layer 112 may be disposed on the front surface of the first substrate 110, but is not limited thereto.

[0074] The gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE may be configured to overlap with the active layer ACT. The gate electrode GE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0075] A first interlayer insulating layer 113a and a second interlayer insulating layer 113b are formed on the gate electrode GE. Contact holes are formed in the first interlayer insulating layer 113a and the second interlayer insulating layer 113b, through which the source electrode SE and the drain electrode DE connect to the active layer ACT. The first interlayer insulating layer 113a and the second interlayer insulating layer 113b are insulating layers protecting the components beneath them, and may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but are not limited thereto.

[0076] The source electrode SE and drain electrode DE are disposed on the second interlayer insulating layer 113b. The source electrode SE and drain electrode DE can be electrically connected to the active layer ACT through contact holes formed in the first interlayer insulating layer 113a, the second interlayer insulating layer 113b, and the gate insulating layer 112. Either the source electrode SE or the drain electrode DE can be electrically connected to the light-emitting element 120. For example, either the source electrode SE or the drain electrode DE can supply driving current to the light-emitting element 120 through the first connection electrode CE1 and the first reflection electrode RE1. The source electrode SE and the drain electrode DE can be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0077] A first conductive layer CL1 is disposed on the gate insulating layer 112. The first conductive layer CL1 is an electrode that applies a constant voltage to the light-shielding layer BSM, and can be electrically connected to the light-shielding layer BSM through the contact holes of the gate insulating layer 112 and the buffer layer 111. For example, the light-shielding layer BSM is connected to the first conductive layer CL1 to prevent it from operating as a floating gate, and to suppress fluctuations in the threshold voltage of the driving transistor DT caused by the floating light-shielding layer BSM. The first conductive layer CL1 can be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0078] A second conductive layer CL2 is disposed on the first interlayer insulating layer 113a, and a third conductive layer CL3 electrically connected to the second conductive layer CL2 is disposed on the second interlayer insulating layer 113b. The second conductive layer CL2 and the third conductive layer CL3 are disposed to overlap with the gate electrode GE of the driving transistor DT, so as to form a capacitor with the gate electrode GE of the driving transistor DT. Therefore, various conductive layers such as the second conductive layer CL2 and the third conductive layer CL3 are disposed on the first substrate 110 to form a capacitor. The second conductive layer CL2 and the third conductive layer CL3 may be made of conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0079] A power line PL is disposed on the second interlayer insulating layer 113b. The power line PL can be configured to transmit electrical voltage to the light-emitting elements 120 of the plurality of sub-pixels SP. The power line PL can be made of a conductive material, and can be made of, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto. The power line PL can be electrically connected to the plurality of light-emitting elements 120 via the second connecting electrode CE2 and the second reflecting electrode RE2, which will be described below. Depending on the configuration of the pixel circuit, the power line PL can be configured as either a low-potential power line PL or a high-potential power line PL.

[0080] A first planarization layer 114a is disposed on the driving transistor DT, the power line PL, and the second interlayer insulating layer 113b. The first planarization layer 114a can planarize the upper part of the pixel circuit including the driving transistor DT. The first planarization layer 114a can be composed of a single layer or two layers, and can be composed of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0081] Next, a plurality of connection electrodes CE are disposed on the first planarization layer 114a. The plurality of connection electrodes CE are electrodes that connect the driving transistor DT and the power line PL to the light-emitting element 120. The plurality of connection electrodes CE includes a first connection electrode CE1 and a second connection electrode CE2. The first connection electrode CE1 can be electrically connected to the driving transistor DT, and the second connection electrode CE2 can be electrically connected to the power line PL. The plurality of connection electrodes CE can be made of a conductive material, and can be, for example, made of copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but are not limited thereto.

[0082] The second planarization layer 114b is disposed on the plurality of connecting electrodes CE. The second planarization layer 114b may be composed of a single layer or a double layer, and may be composed of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0083] The second planarization layer 114b may have a completely flat top surface. The second planarization layer 114b may partially have a tilted surface P3 in each of the plurality of sub-pixels SP, and for example, may have a tilted surface P3 in at least a portion of the region overlapping with the first reflective electrode RE1. For example, the second planarization layer 114b may include a first top surface P1, a tilted surface P3 extending tiltedly from the first top surface P1, and a second top surface P2 extending from the tilted surface P3 and below the first top surface P1. The tilted surface P3 may be configured to overlap with the light conversion layer CCL of the plurality of sub-pixels SP, and each of the first top surface P1 and the second top surface P2 may be disposed between the tilted surface P3 of a sub-pixel SP and the tilted surface P3 of a sub-pixel SP adjacent to that sub-pixel SP. The tilted surface P3 is formed in at least a portion of the top surface of the second planarization layer 114b to increase the thickness of the light conversion layer CCL and improve the light conversion efficiency of the light-emitting element 120.

[0084] In each of the plurality of sub-pixels SP, a first dam BNK1 is formed on the second planarization layer 114b. The first dam BNK1 can be configured to surround the light-emitting element 120 and the light conversion layer CCL. For example, refer to Figure 3 The first dam BNK1, which is disposed in each of the plurality of sub-pixels SP, can be formed as a closed loop shape having surrounding the light-emitting element 120 and the light conversion layer CCL. For example, the planar shape of the first dam BNK1 can be various shapes such as a rectangular shape or a circular shape.

[0085] The first barrier BNK1 minimizes color mixing between multiple sub-pixels SP. The first barrier BNK1 can be formed of an insulating material. Furthermore, the first barrier BNK1 includes a black material to block wiring visible through the active region AA. For example, the first barrier BNK1 can be formed of a carbon-based mixture, specifically including carbon black. Additionally, the first barrier BNK1 can be formed by dispersing various light-scattering materials in a transparent or opaque insulating material. For example, the first barrier BNK1 includes a light-scattering material such as titanium dioxide (TiO2) to change the path of some light emitted from the light-emitting element 120 that is directed to the side direction of the light-emitting element 120 to the upward direction of the light-emitting element 120, and improve the light extraction efficiency of the light-emitting element 120.

[0086] The first dam BNK1 can be formed by a portion disposed on a first top surface P1, another portion disposed on a second top surface P2, and the remaining portion connecting the first portion and the other portion. At least a portion of the light conversion layer CCL can be disposed on an inclined surface P3, and the first dam BNK1 surrounding the light-emitting element 120 and the light conversion layer CCL can be configured to surround the inclined surface P3. In this case, the thickness of the other portion of the first dam BNK1 disposed on the second top surface P2 can be greater than the thickness of the portion of the first dam BNK1 disposed on the first top surface P1. The thickness of the portion of the first dam BNK1 disposed on the second top surface P2 is made larger to always maintain the height of the top surface of the first dam BNK1, and is not limited to the height difference between the first top surface P1 and the second top surface P2.

[0087] In each of the plurality of sub-pixels SP, a first reflective electrode RE1 is disposed on the second planarization layer 114b and the first embankment BNK1. The first reflective electrode RE1 reflects light emitted from the light-emitting element 120 to the top of the first substrate 110 and electrically connects the light-emitting element 120 and the driving transistor DT. The first reflective electrode RE1 may be configured to cover the first embankment BNK1 and the inclined surface P3. For example, the first reflective electrode RE1 may be configured to cover at least the top surface and the inner surface of the first embankment BNK1. The first reflective electrode RE1 may be in contact with the top surface and the side surface of the first embankment BNK1. The first reflective electrode RE1 may be configured to cover the entire top surface of the second planarization layer 114b located inside the first embankment BNK1, which has a closed-loop shape. The first reflective electrode RE1 may be configured to cover the inclined surface P3 located inside the first embankment BNK1. A portion of the first reflective electrode RE1 extends to the outside of the first embankment BNK1 and may be electrically connected to the first connection electrode CE1 through a contact hole in the second planarization layer 114b.

[0088] Considering light reflection efficiency and resistance, the first reflective electrode RE1 may include various conductive layers. For example, the first reflective electrode RE1 may together include an opaque conductive layer such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti) or alloys thereof, and a transparent conductive layer such as indium tin oxide (ITO), but the construction of the first reflective electrode RE1 is not limited to this.

[0089] In each of the plurality of sub-pixels SP, a second dam BNK2 is disposed on the first reflective electrode RE1 and the first dam BNK1. The second dam BNK2 may be disposed above the first dam BNK1 to overlap with the first dam BNK1. The first reflective electrode RE1 may be disposed between the first dam BNK1 and the second dam BNK2. The second dam BNK2 may be formed in the same planar shape as the first dam BNK1. Similar to the first dam BNK1, the second dam BNK2 may be formed in a closed-loop shape surrounding the light conversion layer CCL and the light-emitting element 120. The second dam BNK2 may be formed in the same material as the first dam BNK1, and may be formed, for example, by either an insulating material including a black material or an insulating material including a light-scattering material, but the material of the second dam BNK2 is not limited thereto.

[0090] A bonding layer BL is disposed on a first reflective electrode RE1 in each of the plurality of sub-pixels SP. The bonding layer BL may be a conductive adhesive member that electrically connects the light-emitting element 120 and the first reflective electrode RE1, while fixing the light-emitting element 120 to the first reflective electrode RE1. The bonding layer BL may be conductive to electrically connect the first reflective electrode RE1 and the plurality of light-emitting elements 120. The bonding layer BL may be adhesive to fix the plurality of light-emitting elements 120 to the first reflective electrode RE1. For example, the bonding layer BL may be formed of a material including conductive particles such as indium, and may be an organic layer including conductive particles such as carbon, but is not limited thereto. In this case, the bonding layer BL may be formed of a material on which photolithography can be performed, and the thickness or arrangement area of ​​the bonding layer BL may be easily controlled by photolithography.

[0091] Light-emitting element 120 is disposed on bonding layer BL in each of the plurality of sub-pixels SP. For example, light-emitting element 120 may be disposed on the portion of the first reflective electrode RE1 that overlaps with the first top surface P1. Light-emitting element 120 may be disposed in the region between inclined surface P3 and first embankment BNK1. Light-emitting element 120 may be disposed biased toward one side of the region surrounded by first embankment BNK1. Light-emitting element 120 may be either a light-emitting element (LED) or a micro-light-emitting element (micro-LED), but exemplary embodiments of this disclosure are not limited thereto. Light-emitting element 120 includes a first semiconductor layer 121, an emitting layer 122, a second semiconductor layer 123, a first electrode 124, a second electrode 125, and a protective film 126.

[0092] First, a first semiconductor layer 121 is disposed on the first reflective electrode RE1, and a second semiconductor layer 123 is disposed on the first semiconductor layer 121. The first semiconductor layer 121 and the second semiconductor layer 123 can be semiconductor layers doped with n-type and p-type impurities. For example, the first semiconductor layer 121 and the second semiconductor layer 123 can be layers formed by doping p-type and n-type impurities into materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). The p-type impurities can be magnesium (Mg), zinc (Zn), and beryllium (Be), and the n-type impurities can be silicon (Si), germanium, and tin (Sn), but are not limited thereto.

[0093] An emitting layer 122 is disposed between the first semiconductor layer 121 and the second semiconductor layer 123. The emitting layer 122 can emit light based on a driving current supplied to the light-emitting element 120. For example, the emitting layer 122 can emit blue light, and the light-emitting element 120 can be a blue light-emitting element. The emitting layer 122 can be formed of a single-layer or multiple quantum well (MQW) structure, and can be formed, for example, of indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0094] The first electrode 124 is disposed below the first semiconductor layer 121. The first electrode 124 can contact the bottom surface of the first semiconductor layer 121. The first electrode 124 is an electrode for electrically connecting the light-emitting element 120 to the first reflective electrode RE1 and the driving transistor DT. The light-emitting element 120 can be electrically connected to the driving transistor DT through the first electrode 124, the first reflective electrode RE1, and the first connection electrode CE1. The first electrode 124 can be made of an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof; a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO); or a combination of opaque conductive materials and transparent conductive materials. However, it is not limited to this.

[0095] The second electrode 125 is disposed on the second semiconductor layer 123. The second electrode 125 can contact the top surface of the second semiconductor layer 123. The second electrode 125 is an electrode for electrically connecting the light-emitting element 120 and the power line PL. The light-emitting element 120 can be electrically connected to the power line PL through the second electrode 125, the second reflective electrode RE2, and the second connecting electrode CE2. The second electrode 125 can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0096] A protective film 126 is provided to surround the first semiconductor layer 121, the emitter layer 122, and the second semiconductor layer 123. The protective film 126 protects the first semiconductor layer 121, the emitter layer 122, and the second semiconductor layer 123. The protective film 126 may be configured to surround a portion of the side and bottom surfaces of the first semiconductor layer 121, the side surface of the emitter layer 122, and the side surface of the second semiconductor layer 123. A first electrode 124 and a second electrode 125 are exposed from the protective film 126 to connect to the first reflective electrode RE1 and the second reflective electrode RE2. For example, the protective film 126 may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0097] A light conversion layer CCL is disposed in a region within the first dam BNK1 and the second dam BNK2. The light conversion layer CCL may fill a region on the inclined surface P3 surrounded by the first dam BNK1 and the second dam BNK2. The side surfaces of the light conversion layer CCL may contact the first reflective electrode RE1 and the second dam BNK2. The light conversion layer CCL may be configured to surround the side surfaces of the light-emitting element 120. The light conversion layer CCL comprises a light conversion material such as quantum dots, nano-fluorescent materials, or organic fluorescent materials to convert light emitted from the light-emitting element 120 into light of various colors. For example, the light conversion layer CCL can convert light from the light-emitting element 120 into light of various colors, such as red, green, and blue light. For example, when the light-emitting element 120 emits blue light, the light conversion layer CCL may include a green light conversion layer CCL and a red light conversion layer CCL. For example, when the light-emitting element 120 emits light in the ultraviolet wavelength region, the light conversion layer CCL may include a red light conversion layer CCL, a green light conversion layer CCL, and a blue light conversion layer CCL.

[0098] Next, a third planarization layer 114c is disposed on the second planarization layer 114b. The third planarization layer 114c can be disposed in the region between the plurality of first dikes BNK1 and the region between the plurality of second dikes BNK2. The third planarization layer 114c is disposed in the region outside the first dikes BNK1 and the region outside the second dikes BNK2 to cover the first top surface P1 or the second top surface P2 of the second planarization layer 114b. The third planarization layer 114c can be composed of a single layer or a double layer, and can be made of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0099] A second reflective electrode RE2 is disposed on the third planarization layer 114c and the second planarization layer BNK2. The second reflective electrode RE2 reflects the light emitted from the light-emitting element 120 to the top of the first substrate 110 and electrically connects the light-emitting element 120 and the power line PL. The second reflective electrode RE2 can be electrically connected to the second connecting electrode CE2 and the power line PL through contact holes formed in the third planarization layer 114c and the second planarization layer 114b. The second reflective electrode RE2 contacts the second electrode 125 exposed from the light conversion layer CCL above the light-emitting element 120 to be electrically connected to the light-emitting element 120. The light-emitting element 120 can be electrically connected to the power line PL through the second reflective electrode RE2 and the second connecting electrode CE2.

[0100] Considering light reflection efficiency and resistance, the second reflective electrode RE2 may include various conductive layers. For example, the second reflective electrode RE2 may be formed of an opaque conductive layer such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof. The second reflective electrode RE2 may also include an opaque conductive layer and a transparent conductive layer such as indium tin oxide (ITO), but the construction of the second reflective electrode RE2 is not limited to these.

[0101] Simultaneously, the second reflective electrode RE2 can be configured to cover a portion of the light conversion layer CCL. The light-emitting element 120 is disposed between the first top surface BNK1 and the inclined surface P3, and the second reflective electrode RE2 can be configured to extend from the first top surface P1 toward the light-emitting element 120 and the inclined surface P3. The second reflective electrode RE2 can be configured to cover the upper part of the light-emitting element 120, thereby also covering a portion of the light conversion layer CCL adjacent to the light-emitting element 120. For example, the second reflective electrode RE2 can be configured to cover a region on the first top surface P1 and a portion of the light conversion layer CCL disposed on the inclined surface P3 adjacent to the first top surface P1. The remaining portions of the light conversion layer CCL disposed on other regions of the inclined surface P3 can be exposed from the second reflective electrode RE2. Therefore, the region exposed from the second reflective electrode RE2 to emit light can be defined as the open region OA.

[0102] A light-emitting element 120 is disposed on a first top surface P1 in a region of the first embankment BNK1, and light emitted from the light-emitting element 120 can be reflected by the second reflective electrode RE2 and the first reflective electrode RE1 toward the light conversion layer CCL on the inclined surface P3. The light conversion layer CCL on the inclined surface P3 has a relatively larger thickness compared to the light conversion layer CCL on the first top surface P1, so light can be converted more easily by the light conversion layer CCL on the inclined surface P3. Therefore, the light-emitting element 120 is disposed on the first top surface P1, and light emitted from the light-emitting element 120 is reflected by the first reflective electrode RE1 and the second reflective electrode RE2 toward the light conversion layer CCL on the inclined surface P3 to improve the overall light conversion efficiency.

[0103] Furthermore, the light converted by the light conversion layer CCL can be guided to the outside of the display device 100 through the open area OA exposed from the second reflective electrode RE2. The light converted by the light conversion layer CCL is reflected between the first reflective electrode RE1 and the second reflective electrode RE2 to change the light path, and can be released to the outside of the display device 100 through the open area OA in which the second reflective electrode RE2 is not formed.

[0104] At the same time, refer to Figure 3 The second reflective electrode RE2 can be disposed in each of the multiple sub-pixels SP, and one second reflective electrode RE2 can be disposed in several sub-pixels SP. For example, the second reflective electrode RE2 is an electrode that transmits electrical voltage to multiple light-emitting elements 120, so the second reflective electrode RE2 is shared in some sub-pixels SP.

[0105] Multiple sub-pixels SP sharing a second reflective electrode RE2 are symmetrically arranged with respect to the second reflective electrode RE2 to suppress the degradation of viewing angle characteristics. For example, a second reflective electrode RE2 can be arranged between a pair of first sub-pixels SP1 adjacent to each other in the column direction, between a pair of second sub-pixels SP2 adjacent to each other in the column direction, and between a pair of third sub-pixels SP3 adjacent to each other in the column direction. For example, the second reflective electrode RE2 covers the lower region of one first sub-pixel SP1 and the upper region of another first sub-pixel SP1 between a pair of first sub-pixels SP1. In this case, light can be emitted in the upward, leftward, and rightward directions in the open region OA of one first sub-pixel SP1, and in the downward, leftward, and rightward directions in the open region OA of another first sub-pixel SP1. In this case, the amount of light emitted in the leftward direction and the amount of light emitted in the rightward direction in a pair of first sub-pixels SP1 are made substantially the same, thus minimizing the brightness deviation according to the viewing angle in the leftward and rightward directions. Furthermore, in a pair of first sub-pixels SP1, the amount of light emitted in the upward direction and the amount of light emitted in the downward direction are made substantially the same, thus minimizing the brightness deviation based on the viewing angle in the upward and downward directions. Therefore, the open regions OA of the multiple sub-pixels SP can be symmetrically arranged with respect to the second reflective electrode RE2.

[0106] Next, a first black matrix BM1 is formed on the third planarization layer 114c and the second reflective electrode RE2. The first black matrix BM1 can be formed in the area other than where the light conversion layer CCL is formed. The first black matrix BM1 can shield light from multiple sub-pixels SP to prevent color mixing. Furthermore, the first black matrix BM1 absorbs light incident on the display device 100 from the outside to minimize the degradation of visibility caused by external light reflected from the configuration in the display device 100. For example, the first black matrix BM1 includes a black component and can be formed from an opaque resin including dye, but is not limited thereto.

[0107] A fourth planarization layer 114d is disposed on the first black matrix BM1. The fourth planarization layer 114d can provide a flat surface on the first black matrix BM1. The fourth planarization layer 114d can be composed of a single layer or a double layer, and can be composed of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0108] A protective layer 115 is provided on the fourth planarization layer 114d. The protective layer 115 is a layer for protecting the structure beneath it and can inhibit the penetration of moisture or oxygen from the outside. For example, the protective layer 115 can be composed of a single layer or a double layer, and can be made of epoxy-based or acrylic-based polymers, but is not limited thereto.

[0109] Multiple color filters CF can also be provided on the protective layer 115. The multiple color filters CF can overlap with multiple sub-pixels SP. Light emitted from the open area OA of each sub-pixel SP passes through the multiple color filters CF to travel to the outside of the display device 100. In contrast, external light incident on the display device 100 is absorbed by the multiple color filters CF, so the external light is not reflected back to the outside of the display device 100. Therefore, by providing color filters CF that absorb external light and only transmit light converted by the light conversion layer CCL and to be emitted to the outside of the display device 100, display quality and color reproduction are improved.

[0110] A second black matrix BM2 can also be provided on the protective layer 115. The second black matrix BM2 can be disposed between multiple color filters CF. The second black matrix BM2 can shield light from multiple sub-pixels SP to prevent color mixing. Furthermore, the second black matrix BM2 absorbs light incident on the display device 100 from the outside to minimize the degradation of visibility caused by external light reflected from the configuration in the display device 100. For example, the second black matrix BM2 includes a black component and can be formed from an opaque resin including dyes, but is not limited thereto.

[0111] A second substrate 116 is disposed on the color filter CF and the second black matrix BM2. The second substrate 116 is a component for supporting and protecting various components included in the display device 100, and may be formed of an insulating material. For example, the second substrate 116 may be formed of glass or resin. In addition, the second substrate 116 may be formed of polymer or plastic, or may be formed of a flexible material.

[0112] Meanwhile, according to this disclosure, the color filter CF and the second black matrix BM2 are described as being disposed on the protective layer 115, but the color filter CF and the second black matrix BM2 may be omitted, and are not limited thereto.

[0113] In the following text, reference will be made to Figures 5A to 7 The effect of improving light conversion efficiency of the structure of the display device 100 according to an exemplary embodiment of the present disclosure is described.

[0114] Figure 5A and Figure 5B This is a view showing the arrangement of the light-emitting element, the first reflective electrode, the second reflective electrode, and the embankment in a display device according to a comparative embodiment and an exemplary embodiment. Figure 6 It is a graph showing the light conversion efficiency according to angle in each of the display devices according to the comparative embodiment and the exemplary embodiment. Figure 7 This is a graph showing the light conversion efficiency based on the thickness of the light conversion layer. Specifically, Figure 6 By measuring according to Figure 5A and Figure 5B The simulation results are obtained based on the light conversion efficiency of the display device structure according to the angle of light emitted from the light-emitting element 120 in the comparative embodiment and an exemplary embodiment.

[0115] Reference Figure 5A In the display device 10 according to the comparative embodiment, a first reflective electrode RE1 is disposed below the light-emitting element 120, and a second reflective electrode RE2 is disposed above the light-emitting element 120. The first reflective electrode RE1 and the second reflective electrode RE2 are arranged parallel to each other, and the length of the first reflective electrode RE1 may be longer than the length of the second reflective electrode RE2. A dam BNK with an angle of approximately 60 degrees is provided at the end of the first reflective electrode RE1, and a light conversion layer CCL is disposed between the dam BNK and the light-emitting element 120.

[0116] Reference Figure 5B In the display device 100 according to the exemplary embodiment, a first reflective electrode RE1 is disposed below the light-emitting element 120, and a second reflective electrode RE2 is disposed above the light-emitting element 120. The second reflective electrode RE2 is disposed horizontally, and a portion of the first reflective electrode RE1 is configured with an inclined surface P3 having an angle of approximately 15 degrees, and the length of the first reflective electrode RE1 may be longer than the length of the second reflective electrode RE2. A dam BNK having an angle of approximately 60 degrees is disposed at the end of the first reflective electrode RE1, and a light conversion layer CCL is disposed between the dam BNK and the light-emitting element 120. That is, unlike the display device 10 according to the comparative embodiment, in the display device 100 according to the exemplary embodiment, the first reflective electrode RE1 may have an inclined surface P3 inclined below the light-emitting element 120.

[0117] Refer to together Figure 5A , Figure 5B and Figure 6 When the angle of light traveling upward toward the light-emitting element 120 is limited to 0 degrees and the angle of light traveling downward toward the light-emitting element 120 is limited to 180 degrees, it is confirmed that in each of the display device 10 of the comparative embodiment and the display device 100 of the exemplary embodiment, the light conversion efficiency of light traveling in a direction perpendicular to the side surface of the light-emitting element 120 at an angle of 90 degrees is similar. For example, in Figure 5A and Figure 5B In this context, the shaded area represents the region of light traveling at an angle between 60 and 90 degrees. Furthermore, as... Figure 6 As shown, it is confirmed that the light conversion efficiency of light traveling in the region between 60 degrees and 90 degrees is similar in both the display device 10 of the comparative embodiment and the display device 100 of the exemplary embodiment.

[0118] However, it has been confirmed that the light conversion efficiency of light traveling in the region between 0 and 60 degrees and the region between 90 and 180 degrees is higher in the display device 100 according to the exemplary embodiment than in the display device 10 according to the comparative embodiment. That is, some light traveling in the upward direction, the oblique upward direction, the oblique downward direction, and the downward direction of the light-emitting element 120 is reflected from the bottom surface of the second reflective electrode RE2, the top surface of the first reflective electrode RE1, and the side surface of the embankment BNK to be converted into light in different directions in the light conversion layer CCL. At this time, in the display device 100 according to the exemplary embodiment, the first reflective electrode RE1 is configured to have an inclined surface P3 that slopes downward from the light-emitting element 120. Therefore, the light conversion layer CCL located on the first reflective electrode RE1 can have a larger thickness, and the length of the light path of the light moving in the light conversion layer CCL can be increased. Therefore, in the display device 100 according to the exemplary embodiment, the length of the light path of the light reflected from the side surfaces of the first reflective electrode RE1 and the embankment BNK can be increased overall, and the light conversion efficiency can be improved.

[0119] Reference Figure 7 Within a predetermined range, the greater the thickness of the light conversion layer CCL, the better the light conversion efficiency. For example, it has been confirmed that the light conversion efficiency gradually increases as the thickness of the light conversion layer CCL increases from about 3 μm to 8 μm. However, when the thickness of the light conversion layer CCL is excessively increased, for example, to 8 μm or greater, the light efficiency may decrease due to light absorption. Therefore, in the display device 100 according to an exemplary embodiment of the present disclosure, considering the light conversion efficiency, a tilted surface P3 is formed in the region where the light conversion layer CCL is disposed to adjust the thickness of the light conversion layer CCL.

[0120] Therefore, in the display device 100 according to an exemplary embodiment of the present disclosure, a tilted surface P3 is formed in the region where the light conversion layer CCL is disposed, so that the thickness of the light conversion layer CCL is made larger and the light conversion efficiency is improved. The tilted surface P3 is formed in the region where the light conversion layer CCL is disposed such that the thickness of the light conversion layer CCL increases with distance from the light-emitting element 120. Light emitted from the light-emitting element 120 can travel towards the light conversion layer CCL through the first reflective electrode RE1 on the lower and side portions of the light-emitting element 120 and the second reflective electrode RE2 above the light-emitting element 120. The first reflective electrode RE1 surrounding the side surface of the light conversion layer CCL and the second reflective electrode RE2 covering at least a portion of the top surface of the light conversion layer CCL are formed to easily reflect light emitted from the light-emitting element 120 towards the light conversion layer CCL. At this time, the light conversion layer CCL has a larger thickness, so that the overall length of the light path of light moving in the light conversion layer CCL can be increased, and the light conversion efficiency can be improved. Therefore, the thickness of the light conversion layer CCL can be adjusted using the tilted surface P3, and the light conversion efficiency can be improved.

[0121] Figure 8 This is an enlarged plan view of a display device according to another exemplary embodiment of the present disclosure. Figure 9 This is an enlarged plan view of a display device according to yet another exemplary embodiment of the present disclosure. Figure 8 and Figure 9 Display devices 800 and 900 and Figures 1 to 4 The only difference between the display devices 100 is the configuration of the multiple pixels PX' and PX" and the arrangement of the second reflective electrode RE2, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0122] Reference Figure 8 and Figure 9 Multiple sub-pixels SP constituting a pixel PX' or PX" can share a second reflective electrode RE2. The amount of light emitted from the multiple sub-pixels SP in the upward, downward, leftward, and rightward directions is uniformly configured to minimize brightness deviation according to the viewing angle. Furthermore, in some sub-pixels SP, the emission direction is configured differently to configure different viewing angles of color.

[0123] For example, refer to Figure 8A pixel PX' may include a first sub-pixel SP1, a second sub-pixel SP2, and a pair of third sub-pixels SP3. The first sub-pixel SP1 and the second sub-pixel SP2 may be arranged to be adjacent to each other in the column direction, and the pair of third sub-pixels SP3 may also be arranged to be adjacent to each other in the column direction. The first sub-pixel SP1, the second sub-pixel SP2, and the pair of third sub-pixels SP3, which are included in a pixel PX' and form a rectangular region, may share a second reflective electrode RE2. The second reflective electrode RE2 is formed with a rectangular shape to cover a portion of each of the first sub-pixel SP1, the second sub-pixel SP2, and the pair of third sub-pixels SP3.

[0124] At this point, in a pair of third sub-pixels SP3, the open region OA is symmetrically arranged relative to the second reflective electrode RE2, thereby reducing brightness deviations based on the vertical and horizontal viewing angles of the pair of third sub-pixels SP3. Among the plurality of second reflective electrodes RE2, some second reflective electrodes RE2 can cover the lower region of the first sub-pixel SP1 and the upper region of the second sub-pixel SP2, and the remaining second reflective electrodes RE2 can cover both the upper and lower regions of the third sub-pixel SP3. Therefore, as indicated by the arrows, in the plurality of first sub-pixels SP1, light can be emitted only in the upward, leftward, and rightward directions, and in the plurality of second sub-pixels SP2, light can be emitted only in the downward, leftward, and rightward directions. Thus, brightness can be intentionally varied according to the viewing angle of each sub-pixel.

[0125] Reference Figure 9A pixel PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a pair of third sub-pixels SP3. The first sub-pixel SP1 and the second sub-pixel SP2 may be arranged to be adjacent to each other in the row direction, and the pair of third sub-pixels SP3 may also be arranged to be adjacent to each other in the row direction. The first sub-pixel SP1 and the third sub-pixel SP3 may also be arranged to be adjacent to each other in the column direction, and the second sub-pixel SP2 and the pair of third sub-pixels SP3 may also be arranged to be adjacent to each other in the column direction. In this case, the first sub-pixel SP1, the second sub-pixel SP2, and the pair of third sub-pixels SP3, which are adjacent to each other and form a rectangular area, may share a second reflective electrode RE2. The second reflective electrode RE2 may be formed by a rectangular portion covering the upper (or lower) area of ​​the first sub-pixel SP1 and the upper (or lower) area of ​​the second sub-pixel SP2 located in the same row, and another rectangular portion extending from this rectangular portion to the area between the pair of third sub-pixels SP3, to cover the left and right areas of each of the pair of third sub-pixels SP3.

[0126] At this point, in a pair of third sub-pixels SP3, the open region OA is symmetrically arranged relative to the second reflective electrode RE2, thereby reducing brightness deviations based on the vertical and horizontal viewing angles of the pair of third sub-pixels SP3. The second reflective electrode RE2 can cover the left-side region of the third sub-pixel SP3 and the right-side region of the adjacent third sub-pixel SP3 in the row direction, and also cover the upper regions of the first sub-pixel SP1 and the second sub-pixel SP2. Therefore, the plurality of third sub-pixels SP3 can be composed of some third sub-pixels SP3 that emit light in the upward, leftward, and downward directions, and the remaining third sub-pixels SP3 that emit light in the downward, upward, and rightward directions. The plurality of first sub-pixels SP1 can be configured to emit light only in the downward, leftward, and rightward directions, and the plurality of second sub-pixels SP2 can be configured to emit light only in the downward, leftward, and rightward directions. Therefore, the plurality of third sub-pixels SP3 can be configured such that they emit the same level of light in the upward and downward directions, and in the plurality of first sub-pixels SP1 and the plurality of second sub-pixels SP2, light is emitted in a specific direction to intentionally change the color according to the viewing angle.

[0127] Therefore, in the display devices 800 and 900 according to various exemplary embodiments of the present disclosure, a plurality of sub-pixels SP share the second reflective electrode RE2, and the plurality of sub-pixels SP are arranged in different ways to change color according to the viewing angle.

[0128] Figure 10 This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure. Figure 10 The display device 1000 and Figures 1 to 4The display device 100 is basically the same as the display device 100, except that it also includes multiple irregular patterns 1030, so redundant descriptions will be omitted.

[0129] Reference Figure 10 Multiple irregular patterns 1030 are disposed below the first reflective electrode RE1. For example, the multiple irregular patterns 1030 may be disposed between the first reflective electrode RE1 and the inclined surface P3 of the second planarization layer 114b. The multiple irregular patterns 1030 may be formed to have a constant size or various sizes. Furthermore, the multiple irregular patterns 1030 may be arranged regularly or irregularly.

[0130] The first reflective electrode RE1 can have an irregular surface due to the multiple irregular patterns 1030. The first reflective electrode RE1 can be formed along the multiple irregular patterns 1030, so that the surface can be formed unevenly.

[0131] Therefore, in another exemplary embodiment of the display device 1000 according to this disclosure, the surface of the first reflective electrode RE1 is non-uniformly formed by a plurality of irregular patterns 1030, making it easier for light to be reflected and scattered from the surface of the first reflective electrode RE1. Thus, light emitted from the light-emitting element 120 is reflected and scattered from the surface of the first reflective electrode RE1 and absorbed by the light-converting material of the light-converting layer CCL, easily converted into light of different colors. Furthermore, the light converted in the light-converting layer CCL can be easily released to the outside of the display device 1000.

[0132] Figure 11 This is an enlarged plan view of a display device according to yet another exemplary embodiment of the present disclosure. Figure 12 This is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure. Figure 11 and Figure 12 The display device 1100 and Figures 1 to 4 The display device 100 and Figure 10 The difference between the display device 1000 and the previous one is that the light-emitting element 120 is disposed on the second top surface P2 below the inclined surface P3, and therefore the structure is different, but the other configurations are basically the same. Therefore, redundant descriptions will be omitted.

[0133] Reference Figure 11 and Figure 12The planar shape of each of the plurality of sub-pixels SP can be circular. For example, the planar shape of the light conversion layer CCL of each of the plurality of sub-pixels SP can be an annular or circular shape, and the planar shape of the reflective layer RE2a of the second reflective electrode RE2 can be circular. In this case, the reflective layer RE2a of the second reflective electrode RE2 can be formed into a circular shape having a smaller circular shape than that of the light conversion layer CCL, and at least the edge portion of the light conversion layer CCL can be exposed from the reflective layer RE2a of the second reflective electrode RE2. Therefore, the open region OA of each of the plurality of sub-pixels SP can be formed into an annular shape having an edge portion along the light conversion layer CCL. However, the planar shapes of the plurality of sub-pixels SP, the light conversion layer CCL, and the second reflective electrode RE2 can be various shapes other than circular shapes, such as rectangular shapes, triangular shapes, etc., but are not limited thereto.

[0134] A buffer layer 111, a gate insulating layer 112, a first interlayer insulating layer 113a, a second interlayer insulating layer 113b, a driving transistor DT, and a power line PL are disposed on the first substrate 110, and a first planarization layer 114a is disposed on the driving transistor DT and the power line PL.

[0135] The top surface of the first planarization layer 114a includes a flat first top surface P1, an inclined surface P3 extending obliquely from the first top surface P1, and a second top surface P2 extending flatly from the inclined surface P3. The first top surface P1 and the second top surface P2 can be configured to be parallel to a surface of the first substrate 110, and the obliquely extending inclined surface P3 can be disposed between the first top surface P1 and the second top surface P2. The height of the first top surface P1 can be greater than the height of the second top surface P2.

[0136] A first top surface P1 can be disposed in the region between multiple sub-pixels SP, a second top surface P2 can be disposed below the light-emitting element 120 in each of the multiple sub-pixels SP, and a tilted surface P3 can be disposed between the first top surface P1 and the second top surface P2. In each of the multiple sub-pixels SP, the region where the light-emitting element 120 is disposed can be formed as a recess by the second top surface P2 and the tilted surface P3. The first top surface P1 disposed in the region between the multiple sub-pixels SP can be connected to each other and can be formed into a grid shape.

[0137] Multiple irregular patterns 1030 are disposed on the inclined surface P3 of the first planarization layer 114a. The multiple irregular patterns 1030 are patterns used to form an irregular structure on the surface of the first reflective electrode RE1. The first reflective electrode RE1 formed on the multiple irregular patterns 1030 is formed to have a surface shape along the surface shape of the multiple irregular patterns 1030 to reflect and scatter light.

[0138] A first reflective electrode RE1 is disposed on the first planarization layer 114a and a plurality of irregular patterns 1030. The first reflective electrode RE1 is an electrode used to electrically connect the light-emitting element 120 and the driving transistor DT. Furthermore, the first reflective electrode RE1 can reflect light emitted from the light-emitting element 120 to the upper part of the first substrate 110. The first reflective electrode RE1 can be electrically connected to the driving transistor DT through contact holes formed on the first top surface P1 of the first planarization layer 114a. The first reflective electrode RE1 extends from the first top surface P1 of the first planarization layer 114a to the inclined surface P3 and the second top surface P2, covering the entire area where the light-emitting element 120 and the light conversion layer CCL are disposed. The first reflective electrode RE1 covering the inclined surface P3 and the second top surface P2 can be formed in a recessed cup shape. Therefore, the recessed first reflective electrode RE1 can easily reflect light that has been guided to the lateral direction from the light emitted from the light-emitting element 120 to the top of the first substrate 110. The first reflective electrode RE1 may include an opaque conductive layer such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof. Considering resistance, the first reflective electrode RE1 may also include a transparent conductive layer such as indium tin oxide (ITO) in the opaque conductive layer, but is not limited thereto.

[0139] A connecting electrode CE2 is disposed on the first planarization layer 114a. The connecting electrode CE2 is the electrode that electrically connects the electric field line PL and the second reflective electrode RE2. The connecting electrode CE2 can be electrically connected to the electric field line PL through contact holes in the first planarization layer 114a. The connecting electrode CE2 can be electrically connected to the second reflective electrode RE2 through contact holes in the second planarization layer 114b, the third planarization layer 114c, and the fourth planarization layer 114d. The connecting electrode CE2 can be formed on the same layer as the first reflective electrode RE1 using the same material.

[0140] Next, a bonding layer BL is disposed on the first reflective electrode RE1 in each of the plurality of sub-pixels SP, and a light-emitting element 120 is disposed on the bonding layer BL. The bonding layer BL and the light-emitting element 120 may be disposed on the second top surface P2 of the first planarization layer 114a.

[0141] Next, a second planarization layer 114b is disposed on the first planarization layer 114a, the first reflective electrode RE1, and the connecting electrode CE2, and a third planarization layer 114c is disposed on the second planarization layer 114b. After forming the second planarization layer 114b and the third planarization layer 114c on the entire surface of the first substrate 110, portions of the second planarization layer 114b and the third planarization layer 114c in the region where the light conversion layer CCL will be disposed are removed to form the second planarization layer 114b and the third planarization layer 114c. The second planarization layer 114b and the third planarization layer 114c can be configured to surround each of the plurality of light-emitting elements 120. The second planarization layer 114b and the third planarization layer 114c can be used to fix the plurality of light-emitting elements 120 together with the bonding layer BL. At least a portion of the second planarization layer 114b and the third planarization layer 114c overlapping with the inclined surface P3 and the second top surface P2 is removed to form a space to fill the light conversion layer CCL. The second planarization layer 114b and the third planarization layer 114c can be composed of a single layer or a double layer, and can be composed of, for example, benzocyclobutene or acrylic organic materials, but are not limited thereto.

[0142] At the same time, despite Figure 12 The diagram shows a second planarization layer 114b and a third planarization layer 114c surrounding the light-emitting element 120, but the second planarization layer 114b and the third planarization layer 114c surrounding the light-emitting element 120 may be omitted, but the present disclosure is not limited thereto.

[0143] A light conversion layer CCL is disposed on the first reflective electrode RE1 in each of the plurality of sub-pixels SP. The light conversion layer CCL can convert light emitted from the light-emitting element 120 into light of different colors. The light conversion layer CCL can be configured to surround the plurality of light-emitting elements 120 and fix the plurality of light-emitting elements 120 with a second planarization layer 114b and a third planarization layer 114c. The light conversion layer CCL can be configured to overlap with the inclined surface P3 and the second top surface P2. The light conversion layer CCL can fill the space formed by removing the second planarization layer 114b and the third planarization layer 114c. The thickness of the light conversion layer CCL can be formed to be greater than the thickness of the light-emitting element 120.

[0144] Meanwhile, due to the inclined surface P3 and the second top surface P2 of the first planarization layer 114a, the light conversion layer CCL can have a large thickness. For example, when the first planarization layer 114a is formed only by the first top surface P1 without the indentation of the inclined surface P3 and the second top surface P2, the thickness of the light conversion layer CCL disposed on the first planarization layer 114a and the first reflective electrode RE1 can also be reduced. At the same time, since a groove is formed in the first planarization layer 114a in the region where the light conversion layer CCL is disposed, the overall thickness of the light conversion layer CCL can be increased, thereby improving the light conversion efficiency of the light conversion layer CCL.

[0145] Next, a fourth planarization layer 114d is disposed on the third planarization layer 114c, the light conversion layer CCL, and the light-emitting element 120. The fourth planarization layer 114d can planarize the upper part of the light-emitting element 120 and the light conversion layer CCL. The fourth planarization layer 114d can be composed of a single layer or a double layer, and can be composed of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0146] Simultaneously, the fourth planarization layer 114d may include a contact hole through which the second reflective electrode RE2 contacts the light-emitting element 120. The contact hole of the fourth planarization layer 114d may be formed in a stepped shape that widens from the bottom to the top. Since the contact hole of the fourth planarization layer 114d has a stepped shape, the second reflective electrode RE2 formed on the fourth planarization layer 114d may also have a stepped shape. Therefore, the fourth planarization layer 114d can provide contact holes for forming the stepped second reflective electrode RE2 in the regions of multiple sub-pixels SP, and provide a flat top surface in the regions between the multiple sub-pixels SP.

[0147] Next, in each of the plurality of sub-pixels SP, a dam BNK is provided surrounding the light-emitting element 120 and the light conversion layer CCL. The dam BNK is disposed in the region between the plurality of sub-pixels SP to suppress color mixing of the light from the plurality of sub-pixels SP. The dam BNK is disposed in the region between the plurality of sub-pixels SP and can be formed in a grid shape. The dam BNK can be disposed on the first top surface P1 of the first planarization layer 114a. The portions of the second planarization layer 114b, the third planarization layer 114c, and the fourth planarization layer 114d that overlap with the first top surface P1 are removed, and the dam BNK can be formed in the space. The dam BNK can be formed by dispersing various light-scattering materials in an insulating material. For example, the dam BNK includes a light-scattering material such as titanium dioxide (TiO2) to change the light path to the upward direction of the light-emitting element 120 by scattering and reflecting some of the light emitted from the light-emitting element 120 to the side direction of the light-emitting element 120, and to improve the light extraction efficiency.

[0148] A second reflective electrode RE2 is disposed on the fourth planarization layer 114d and the embankment BNK. The second reflective electrode RE2 is an electrode used to electrically connect the light-emitting element 120 and the power line PL. The second reflective electrode RE2 can be electrically connected to the connecting electrode CE2 through the contact holes of the fourth planarization layer 114d, the third planarization layer 114c, and the second planarization layer 114b. The second reflective electrode RE2 can be electrically connected to the light-emitting element 120 through the stepped contact holes of the fourth planarization layer 114d. Therefore, the light-emitting element 120 can be electrically connected to the power line PL through the second reflective electrode RE2 and the connecting electrode CE2.

[0149] The second reflective electrode RE2 can be formed as a double-layer structure of a reflective layer RE2a and a transparent layer RE2b. The reflective layer RE2a can be disposed on the fourth planarization layer 114d, and the transparent layer RE2b can be disposed on the reflective layer RE2a. The reflective layer RE2a can be formed of an opaque conductive layer such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium, or alloys thereof, and the transparent layer RE2b can be formed of a transparent conductive layer such as indium tin oxide (ITO).

[0150] The reflective layer RE2a is a layer that reflects light emitted from the light-emitting element 120 toward the light conversion layer CCL and the first reflective electrode RE1 near the light-emitting element 120. The reflective layer RE2a can be disposed on the light-emitting element 120. The reflective layer RE2a can be disposed only in a portion of the second reflective electrode RE2. For example, the reflective layer RE2a can overlap with the light-emitting element 120 and the portion of the light conversion layer CCL surrounding the light-emitting element 120. The reflective layer RE2a can extend from a region on the second top surface P2 of the first planarization layer 114a toward a region on the inclined surface P3 to cover the light-emitting element 120. The reflective layer RE2a can be disposed to overlap with the second top surface P2 of the first planarization layer 114a, but not to overlap with the inclined surface P3, such that the portion of the light conversion layer CCL disposed on the inclined surface P3 is exposed from the reflective layer RE2a of the second reflective electrode RE2. Since the reflective layer RE2a is disposed in a stepped contact hole of the fourth planarization layer 114d, the cross-sectional shape of the reflective layer RE2a can be stepped.

[0151] The transparent layer RE2b is used to electrically connect the light-emitting element 120 and the power line PL. The transparent layer RE2b can be disposed throughout the second reflective electrode RE2. For example, the transparent layer RE2b can be disposed overlapping the light conversion layer CCL, the light-emitting element 120, and the embankment BNK, and can be electrically connected to the connecting electrode CE2 through the contact holes of the fourth planarization layer 114d, the third planarization layer 114c, and the second planarization layer 114b.

[0152] The transparent layer RE2b may overlap with the open region OA. The open region OA is the area that releases light converted in the light conversion layer CCL, and the reflective layer RE2a is not provided in the open region OA, but the transparent layer RE2b may be provided. Only the transparent layer RE2b is provided in the open region OA, so that the light converted in the light conversion layer CCL can be extracted to the outside. The open region OA may be set at a predetermined distance from the light-emitting element 120. The open region OA may be formed into a closed loop shape surrounding the light-emitting element 120.

[0153] A first black matrix BM1 is formed on the second reflective electrode RE2 and the fourth planarization layer 114d. The first black matrix BM1 can be configured to cover the area except for the open region OA. For example, the first black matrix BM1 can be configured to cover the reflective layer RE2a of the second reflective electrode RE2. The transparent layer RE2b of the second reflective electrode RE2, which overlaps with the open region OA, can be exposed from the first black matrix BM1. The first black matrix BM1 can be spaced apart from the portion of the light conversion layer CCL that is exposed from the reflective layer. Therefore, light converted in the light conversion layer CCL can be guided to the outside through the open region OA, where only the transparent layer RE2b is formed. The first black matrix BM1 can shield light from multiple sub-pixels SP to prevent color mixing. Furthermore, the first black matrix BM1 absorbs light incident on the display device 1100 from the outside to minimize the degradation of visibility caused by external light reflected by the configuration in the display device 1100. For example, the first black matrix BM1 includes a black component and can be formed from an opaque resin including dye, but is not limited thereto.

[0154] A fifth planarization layer 1114e is disposed between the first black matrix BM1 and the protective layer 115. The fifth planarization layer 1114e can planarize the upper part of the first black matrix BM1. The fifth planarization layer 1114e can be composed of a single layer or a double layer, and can be composed of, for example, benzocyclobutene or acrylic organic materials, but is not limited thereto.

[0155] In another exemplary embodiment of the display device 1100 according to the present disclosure, an inclined surface P3 is formed on an insulating layer (e.g., on a first planarization layer 114a) disposed below the light-emitting element 120 and the first reflective electrode RE1, so that the first reflective electrode RE1 is formed at an inclined surface. Furthermore, light traveling in the lateral direction can be easily reflected to the top of the first substrate 110. At this time, the reflective layer RE2a of the second reflective electrode RE2 disposed above the light-emitting element 120 is also formed as an upwardly widened stepped structure to guide the light emitted from the light-emitting element 120 to the open region OA. The light emitted from the light-emitting element 120 is reflected between the first reflective electrode RE1 and the second reflective electrode RE2, and can travel in the lateral direction of the light-emitting element 120 toward the interior of the light conversion layer CCL. In this process, the light from the light-emitting element 120 can be converted into light of different colors, and the converted light in the light conversion layer CCL can travel toward the open region OA through the first reflective electrode RE1 on the inclined surface P3. At this time, some of the light that does not pass through the open area OA but continues to travel in the lateral direction of the light-emitting element 120 can have its light path altered by the dam BNK, which includes light-scattering material, and can be guided back to the open area OA. Therefore, the light emitted from the light-emitting element 120 moves within the light conversion layer CCL to be converted into light of different colors by the first reflective electrode RE1, which is obliquely formed below the light-emitting element 120, the second reflective electrode RE2, which is disposed above the light-emitting element 120 and has a stepped shape, and the dam BNK, which is arranged to surround the light conversion layer CCL and includes light-scattering material. The converted light can be easily output to the outside of the display device 1100 through the open area OA. Therefore, the light conversion efficiency and light extraction efficiency can be improved by the first reflective electrode RE1, the second reflective electrode RE2, and the dam BNK, and the brightness of the display device 1100 can be increased.

[0156] Exemplary implementations of this disclosure can also be described as follows:

[0157] According to one aspect of this disclosure, a display device includes: a first substrate; a planarization layer disposed on the first substrate and including a first top surface, a second top surface with a height lower than the first top surface, and an inclined surface; a first reflective electrode at least partially disposed on the inclined surface of the planarization layer; a light-emitting element disposed on the first reflective electrode; and a second reflective electrode disposed to cover the light-emitting element. The light-emitting element is disposed on either the first top surface or the second top surface.

[0158] The display device may further include: a light conversion layer disposed on a first reflective electrode and surrounding a light-emitting element, and a second reflective electrode that may cover a portion of the light conversion layer.

[0159] The display device may further include: a dam disposed on a planarization layer and surrounding a light-emitting element and a light conversion layer, wherein at least a portion of a region in the dam may overlap with an inclined surface.

[0160] The light-emitting element can be disposed on the first top surface in the region of the embankment, and a portion of the light conversion layer can overlap with the inclined surface, and another portion of the light conversion layer can overlap with the first top surface.

[0161] The second reflective electrode can extend from a region on the first top surface toward a region on the inclined surface to cover the light-emitting element, and the portion of the light conversion layer disposed on the inclined surface can be exposed from the second reflective electrode.

[0162] The farther away from the light-emitting element, the thicker the light conversion layer.

[0163] The dike may include: a first dike disposed on the leveling layer; and a second dike disposed on the first dike.

[0164] The first dike can be set on the first top surface and the second top surface, and the thickness of the portion of the first dike set on the second top surface can be greater than the thickness of the other portion of the first dike set on the first top surface.

[0165] The first reflective electrode can contact the top and side surfaces of the first dike, and the first reflective electrode can be disposed between the first dike and the second dike.

[0166] The light-emitting element can be disposed on the second top surface, and a portion of the light conversion layer can overlap with the second top surface, and another portion of the light conversion layer can overlap with the inclined surface.

[0167] The second reflective electrode may include: a reflective layer disposed on the light-emitting element and in a portion of the second reflective electrode; and a transparent layer disposed on the reflective layer and in the entire second reflective electrode.

[0168] The reflective layer of the second reflective electrode can extend from a region on the second top surface toward a region on the inclined surface to cover the light-emitting element, and the portion of the light conversion layer disposed on the inclined surface can be exposed from the reflective layer of the second reflective electrode.

[0169] The portion of the light conversion layer exposed from the reflective layer can be the edge of the light conversion layer.

[0170] The cross-sectional shape of the reflective layer can be stepped.

[0171] The display device may further include: a black matrix disposed on the second reflective electrode to overlap with the reflective layer, and the black matrix may be configured to be spaced apart from the portion of the light conversion layer exposed from the reflective layer.

[0172] The display device may further include: a plurality of irregular patterns disposed between the inclined surface of the planarization layer and the first reflective electrode, and the portion of the first reflective electrode disposed on the inclined surface may have a surface with a shape along the plurality of irregular patterns.

[0173] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: First substrate; A planarization layer is disposed on the first substrate and includes a first top surface, a second top surface with a height lower than that of the first top surface, and an inclined surface; A first reflective electrode is disposed at least partially on the inclined surface of the planarization layer; A light-emitting element, wherein the light-emitting element is located on the first reflective electrode; as well as A second reflective electrode is configured to cover the light-emitting element; The light-emitting element is disposed on either the first top surface or the second top surface.

2. The display device according to claim 1, further comprising: A light conversion layer is disposed on the first reflective electrode and surrounds the light-emitting element; The second reflective electrode covers a portion of the light conversion layer.

3. The display device according to claim 2, further comprising: A dike, which is disposed on the planarization layer and surrounds the light-emitting element and the light conversion layer; At least a portion of the area within the embankment overlaps with the inclined surface.

4. The display device according to claim 3, wherein, The light-emitting element is disposed on the first top surface in the region of the dike, and a portion of the light conversion layer overlaps with the inclined surface, and another portion of the light conversion layer overlaps with the first top surface.

5. The display device according to claim 4, wherein, The second reflective electrode extends from a region on the first top surface toward a region on the inclined surface to cover the light-emitting element, and the portion of the light conversion layer disposed on the inclined surface is exposed from the second reflective electrode.

6. The display device according to claim 4, wherein, The farther away from the light-emitting element, the greater the thickness of the light conversion layer.

7. The display device according to claim 3, wherein, The dike includes: A first dike, wherein the first dike is disposed on the planarization layer; and The second dike is set on top of the first dike.

8. The display device according to claim 7, wherein, The first dam is disposed on the first top surface and the second top surface, and the thickness of the portion of the first dam disposed on the second top surface is greater than the thickness of the other portion of the first dam disposed on the first top surface.

9. The display device according to claim 7, wherein, The first reflective electrode is in contact with the top and side surfaces of the first dike, and the first reflective electrode is disposed between the first dike and the second dike.

10. The display device according to claim 3, wherein, The light-emitting element is disposed on the second top surface, and a portion of the light conversion layer overlaps with the second top surface, while another portion of the light conversion layer overlaps with the inclined surface.

11. The display device according to claim 4, further comprising: A black matrix is ​​set in the area other than the area where the light conversion layer is set.

12. The display device according to claim 10, wherein, The second reflective electrode includes: A reflective layer, wherein the reflective layer is disposed on the light-emitting element and in a portion of the second reflective electrode; and A transparent layer is disposed on the reflective layer and throughout the second reflective electrode.

13. The display device according to claim 12, wherein, The reflective layer of the second reflective electrode extends from a region on the second top surface toward a region on the inclined surface to cover the light-emitting element, and the portion of the light conversion layer disposed on the inclined surface is exposed from the reflective layer of the second reflective electrode.

14. The display device according to claim 13, wherein, The portion of the light conversion layer exposed from the reflective layer is the edge of the light conversion layer.

15. The display device according to claim 12, wherein, The cross-sectional shape of the reflective layer is stepped.

16. The display device according to claim 12, wherein, The reflective layer is formed as an upwardly widening stepped structure.

17. The display device according to claim 12, further comprising: A black matrix, wherein the black matrix is ​​disposed on the second reflective electrode to overlap with the reflective layer; The black matrix is ​​configured to be spaced apart from the portion of the light conversion layer exposed from the reflective layer.

18. The display device according to any one of claims 1 to 17, further comprising: Multiple irregular patterns are disposed between the inclined surface of the planarization layer and the first reflective electrode. The portion of the first reflective electrode disposed on the inclined surface has a surface with a shape following the plurality of irregular patterns.

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