Light emitting device

Abstract

The application relates to a light-emitting device, comprising: a chip layer, comprising a first surface and a second surface opposite to each other in a thickness direction; an isolation channel extending through the chip layer from the second surface to divide the chip layer into a pixel unit area comprising one or more sub-pixel areas, the isolation channel being arranged around the sub-pixel areas; a support material filled at least in the isolation channel to form a support structure, the support structure comprising a support part, a filling part and a protruding part, the filling part surrounding the sidewall of each sub-pixel area, the support part covering the second surface and the filling part, and the protruding part being connected with the filling part and extending from the filling part to a direction away from the second surface; a pixel groove located on the first surface side and corresponding to each sub-pixel area in position; wherein the protruding part surrounds the pixel groove; and a color conversion layer located in the pixel groove. Thus, the performance of the light-emitting device is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a light-emitting device. Background Technology

[0002] Mini LED (Mini Light Emitting Diode) / Micro LED (Mini Light Emitting Diode) direct-view display technology has developed rapidly due to its significant advantages such as high color gamut, fast response, and low power consumption, demonstrating enormous application potential in the display field. The luminous efficacy of Mini LED / Micro LED is affected by the thickness of its color conversion layer; the thinner the color conversion layer, the stronger the luminous efficacy, and the higher the uniformity of the color conversion layer thickness, the better the consistency of luminous efficacy. The thickness of the color conversion layer is usually determined by the thickness of the insulating barrier.

[0003] Currently, the isolation barriers in Mini LED / Micro LED are typically composed of a substrate that has undergone back-side thinning. However, due to limitations in the precision of current thinning processes, the thickness of each isolation barrier is uneven, leading to significant fluctuations in the thickness of the color conversion layer in different areas. When performing back-side thinning, a temporary bonding structure on the front side is usually used for support. However, due to reliability limitations in the temporary bonding process, it is difficult to thin the substrate to 50μm or less. Furthermore, the thinning process is prone to damage, leading to warping, cracking, and other problems, thus affecting yield. Additionally, the back-side process increases process complexity, and the temporarily bonded structure has higher requirements for temperature resistance and other aspects, resulting in low process compatibility.

[0004] It is evident that the current barrier structure restricts the further development of Mini LED / Micro LED. Utility Model Content

[0005] In view of this, the present application provides a light-emitting device to solve at least one problem existing in the background art.

[0006] In a first aspect, embodiments of this application provide a light-emitting device, including:

[0007] A chip layer, comprising a first surface and a second surface that are opposite to each other in the thickness direction;

[0008] An isolation channel extends from the second surface through the chip layer to divide the chip layer into pixel unit regions comprising one or more sub-pixel regions, the isolation channel being disposed around the sub-pixel regions;

[0009] A support structure is formed by at least filling the isolation channel with support material. The support structure includes a support portion, a filling portion, and a protrusion. The filling portion surrounds the sidewall of each of the sub-pixel areas. The support portion covers the second surface and the filling portion. The protrusion is connected to the filling portion and extends from the filling portion in a direction away from the second surface.

[0010] A pixel slot is located on the first surface side and corresponds in position to each of the sub-pixel areas; wherein the protrusion surrounds the pixel slot;

[0011] A color conversion layer is located within the pixel slot.

[0012] In conjunction with the first aspect of this application, in an alternative embodiment, the thickness of the protrusion ranges from 5 μm to 25 μm.

[0013] In conjunction with a first aspect of this application, in an alternative embodiment, a reflective layer covers at least a portion of the sidewalls of the protrusion.

[0014] In conjunction with a first aspect of this application, in an alternative embodiment, a passivation layer is located at least between the reflective layer and the protrusion.

[0015] In conjunction with a first aspect of this application, in an alternative embodiment, the material of the passivation layer comprises an inorganic material; and / or, the support material comprises an organic material.

[0016] In conjunction with the first aspect of this application, in an optional embodiment, the chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along a direction from the first surface to the second surface;

[0017] It also includes: a first electrode covering the sidewall of the first conductive semiconductor layer, the first electrode being electrically connected to the first conductive semiconductor layer; and a reflective layer covering at least a portion of the sidewall of the protrusion.

[0018] In conjunction with the first aspect of this application, in an alternative embodiment, the first electrode and the reflective electrode are formed in the same process based on the same material layer.

[0019] In conjunction with a first aspect of this application, in an alternative embodiment, the included angle between the sidewall and the top wall of the protrusion ranges from 115° to 145°, and the top wall of the protrusion is located on the side of the protrusion away from the filling portion.

[0020] In conjunction with the first aspect of this application, in an optional embodiment, the chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along a direction from the first surface to the second surface;

[0021] It also includes: a second electrode, located on the second surface side and corresponding to each of the sub-pixel regions, wherein the second electrode is electrically connected to the second conductive semiconductor layer;

[0022] An opening is formed in the support portion, which extends inward from the bottom wall of the support portion along the direction from the second surface to the first surface until the second electrode is exposed. The bottom wall of the support portion is located on the side of the support portion away from the filling portion.

[0023] In conjunction with the first aspect of this application, in an optional embodiment, the chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along a direction from the first surface to the second surface;

[0024] It also includes: a second electrode, extending from the bottom wall of the support portion and penetrating the support portion along the direction from the second surface to the first surface, the second electrode being electrically connected to the second conductive semiconductor layer, and the bottom wall of the support portion being located on the side of the support portion away from the filling portion.

[0025] Therefore, compared to using a substrate prepared by back-side thinning as an isolation barrier, the embodiments of this application use the protrusions of the support structure as the isolation barrier. The thickness of each protrusion is basically the same, which helps to ensure the uniformity of the color conversion layer thickness corresponding to different sub-pixel areas, improve the consistency of luminous efficiency, and make it easier to obtain a thinner isolation barrier so that the thickness of the color conversion layer can accurately reach the optimal color conversion efficiency thickness range, significantly improving luminous efficiency. The support structure, integrally formed by the support material, surrounds each sub-pixel area, serving as a rigid three-dimensional skeleton of the light-emitting device, providing strong mechanical support, avoiding the risk of warping and peeling caused by excessively thin devices, and ensuring device yield, overall strength, and reliability. Thus, while ensuring yield, device performance is improved.

[0026] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0027] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0028] Figure 1 This is a schematic diagram of the cross-sectional structure of a light-emitting device in the prior art;

[0029] Figure 2 This is a schematic projection of the chip layer and the isolation channel on the plane of the first surface in an embodiment of this application;

[0030] Figures 3 to 22A cross-sectional structural diagram of a light-emitting device during the fabrication process, provided as an optional specific embodiment;

[0031] Figures 23 to 28 A cross-sectional structural diagram of the light-emitting device during the fabrication process, provided as another alternative specific embodiment;

[0032] Figures 29 to 33 This is a cross-sectional structural diagram of the light-emitting device during the fabrication process, provided as another optional embodiment.

[0033] Explanation of reference numerals in the attached figures:

[0034] 100, Substrate; 110, Temporary bonding adhesive layer; 120, Carrier plate; 130, Pixel groove; 140, Color conversion layer; 150, Filter layer; 160, Protective capping layer; 170, Cutting film; 200, Chip layer; 201, First surface; 202, Second surface; 2010, Pixel unit area; 2011, Sub-pixel area; 210, First conductive semiconductor layer; 220, Active layer; 230, Second conductive semiconductor layer; 2011a, First sub-pixel area; 2011b, Second sub-pixel area; 2011 c. Third sub-pixel area; 300. Conductive layer; 410. First dielectric layer; 420. Second dielectric layer; 430. Third dielectric layer; 500. Isolation channel; 510. First isolation groove; 511. First groove; 512. Second groove; 520. Second isolation groove; 610. First electrode; 620. Second electrode; 621. Conductive via; 700. Reflective layer; 800. Support structure; 810. Support portion; 820. Filling portion; 830. Protrusion; 801. Opening; 900. Passivation layer. Detailed Implementation

[0035] Exemplary embodiments of the present application will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope of the disclosure of the present application to those skilled in the art.

[0036] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0037] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0038] When an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. Although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0039] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. In addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “below,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0040] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0041] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0042] Figure 1 This is a cross-sectional structural diagram of a light-emitting device in the related art. The light-emitting device includes: a chip layer 200, including a first surface 201 and a second surface 202 opposite to each other; a temporary bonding adhesive layer 110 located on the side of the second surface 202; a carrier plate 120 located on the side of the second surface 202, the carrier plate 120 being temporarily bonded to the chip layer 200 through the temporary bonding adhesive layer 110; a substrate 100 located on the first surface side, a pixel groove 130 formed in the substrate 100, the substrate 100 surrounding the pixel groove 130 serving as an isolation barrier; and a color conversion layer (not shown in the figure) located in the pixel groove 130.

[0043] Understandably, the thickness of the color conversion layer depends on the thickness of the isolation barrier. In related technologies, the isolation barrier is typically formed through substrate thinning and etching processes, and its thickness depends on the thinning process. Due to the limitations of the thinning process precision, the thickness uniformity of the substrate 100 after thinning is poor in actual production, leading to significant fluctuations in the thickness of the color conversion layer corresponding to different sub-pixel areas. This reduces the consistency of light efficiency and affects the final display effect. Many color conversion materials, such as quantum dot materials, exhibit increased color conversion efficiency as the thickness decreases. However, due to the reliability limitations of temporary bonding processes, it is difficult to thin the substrate 100 to 50 μm or less. Furthermore, the thinning process is prone to damage, leading to warping and other problems, thus affecting yield. In addition, the fabrication of pixel slots and isolation barriers requires additional back-side processes, increasing process complexity. The temporarily bonded substrate 100 also has higher requirements for temperature resistance, resulting in low process compatibility.

[0044] Based on this, this application provides a light-emitting device, please refer to... Figure 2 , Figure 22 , Figure 28 and Figure 33 The light-emitting devices include:

[0045] Chip layer 200 includes a first surface 201 and a second surface 202 that are opposite to each other in the thickness direction;

[0046] An isolation channel 500 extends from the second surface 202 through the chip layer 200 to divide the chip layer 200 into pixel unit regions 2010 including one or more sub-pixel regions 2011, the isolation channel 500 being disposed around the sub-pixel regions 2011;

[0047] Support material filled within the isolation channel 500 forms a support structure 800. The support structure 800 includes a support portion 810, a filling portion 820, and a protrusion 830. The filling portion 820 surrounds the sidewalls of each sub-pixel area 2011. The support portion 810 covers the second surface 202 and the filling portion 820. The protrusion 830 is connected to the filling portion 820 and extends from the filling portion 820 in a direction away from the second surface 202.

[0048] Pixel slot 130 is located on the side of the first surface 201 and corresponds in position to each sub-pixel area 2011; wherein, protrusion 830 surrounds pixel slot 130;

[0049] Color conversion layer 140 is located within pixel slot 130.

[0050] Therefore, compared to using a substrate prepared by back-side thinning as an isolation barrier, this embodiment uses the protrusions 830 of the support structure 800 as the isolation barrier. The thickness of each protrusion 830 is basically the same, which helps to ensure the uniform thickness of the color conversion layer 140 corresponding to different sub-pixel areas 2011, improves the consistency of luminous efficiency, and makes it easier to obtain a thinner isolation barrier so that the thickness of the color conversion layer 140 accurately reaches the optimal color conversion efficiency thickness range, significantly improving luminous efficiency. The support structure 800, which is integrally formed with the support material, surrounds each sub-pixel area 2011, serving as a rigid three-dimensional skeleton for the light-emitting device, providing strong mechanical support, avoiding the risk of warping and peeling caused by excessively thin devices, and ensuring device yield, overall strength, and reliability. Thus, while ensuring yield, device performance is improved.

[0051] Optionally, the thickness of the protrusion 830 ranges from 5 μm to 25 μm. Understandably, in this embodiment, the protrusion 830 acts as an isolation barrier, determining the thickness of the color conversion layer 140; controlling the thickness of the protrusion 830 within this range, i.e., keeping the thickness of the color conversion layer 140 within this range, is beneficial for improving color conversion efficiency. When the material of the color conversion layer 140 is quantum dots, a thickness range of 5 μm to 25 μm is beneficial for achieving optimal color conversion efficiency.

[0052] Furthermore, the thickness of the protrusion 830 ranges from 5 μm to 20 μm. Even further, the thickness of the protrusion 830 ranges from 10 μm to 20 μm. This is beneficial for further improving color conversion efficiency.

[0053] In some embodiments, the chip layer 200 may include a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 sequentially stacked along the direction from the first surface 201 to the second surface 202. The first conductive semiconductor layer 210 may be an N-type conductive semiconductor layer, and the second conductive semiconductor layer 230 may be a P-type conductive semiconductor layer; the active layer 220 may be a multiple quantum well layer. Here, the first conductive semiconductor layer 210 may also be referred to as the "first semiconductor layer," the second conductive semiconductor layer 230 may also be referred to as the "second semiconductor layer," and the active layer 220 may also be referred to as the "semiconductor light-emitting layer." The materials of the first conductive semiconductor layer 210 and the second conductive semiconductor layer 230 may include at least one of gallium nitride (GaN), gallium arsenide nitride (GaNAs), gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), indium phosphide (InP), and aluminum gallium nitride (AlGaN).

[0054] In some embodiments, the first surface 201 is roughened. This is beneficial for improving light extraction efficiency.

[0055] In some embodiments, please refer to Figure 2 The pixel unit area 2010 may include a first sub-pixel area 2011a, a second sub-pixel area 2011b, and a third sub-pixel area 2011c.

[0056] It should be understood that, Figure 2 This illustration only shows the case where the projection shape of pixel unit area 2010 on the plane of the first surface 201 is rectangular, and pixel unit area 2010 includes three sub-pixel areas 2011. This application does not exclude the possibility that the projection shape of pixel unit area 2010 on the plane of the first surface 201 is triangular, trapezoidal, pentagonal, or other suitable shape. This application also does not exclude the possibility that pixel unit area 2010 includes one, two, four, five, or more sub-pixel areas 2011. Of course, in some specific embodiments, on the plane of the first surface 201, the projection shapes of the first sub-pixel area 2011a, the second sub-pixel area 2011b, and the third sub-pixel area 2011c can be rectangular, trapezoidal, circular, triangular, or other suitable shapes; the projection shapes of the first sub-pixel area 2011a, the second sub-pixel area 2011b, and the third sub-pixel area 2011c can be the same or different. This application does not impose specific limitations in this regard.

[0057] In some embodiments, the first sub-pixel area 2011a is the light-emitting area of ​​the red sub-pixel, the second sub-pixel area 2011b is the light-emitting area of ​​the green sub-pixel, and the third sub-pixel area 2011c is the light-emitting area of ​​the blue sub-pixel. It is understood that the red, green, and blue sub-pixels can constitute a light-emitting pixel unit (LED chip), emitting red, green, and blue light.

[0058] It should be understood that, Figure 2 This application only schematically illustrates the case of a single pixel unit region 2010. It does not exclude the possibility that the chip layer 200, after patterning, is divided into multiple arrayed pixel unit regions 2010. This application does not impose any limitations in this regard.

[0059] As one possible specific implementation method, please refer to Figure 22 The chip layer 200 includes a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 sequentially stacked along the direction from the first surface 201 to the second surface 202. The light-emitting device further includes: a first electrode 610 covering the sidewall of the first conductive semiconductor layer 210, and the first electrode 610 being electrically connected to the first conductive semiconductor layer 210; and a reflective layer 700 covering at least a portion of the sidewall of the protrusion 830. The reflective layer 700 can reflect the light emitted laterally from the sub-pixel area 2011, improving light efficiency and effectively enhancing display brightness.

[0060] The material of the first electrode 610 may include at least one of titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), silver (Ag), platinum (Pt), and rhodium (Rh), or an alloy combination of the above metals. This embodiment does not limit this.

[0061] In some embodiments, the first conductive semiconductor layer 210 includes a stepped portion; the angle between the sidewall of the stepped portion and the first surface 201 is an acute angle. This is beneficial for reflecting light emitted laterally from the active layer 220, thereby improving light extraction efficiency. Furthermore, the angle between the sidewall of the stepped portion and the first surface 201 ranges from 35° to 65°, which is even more conducive to achieving the desired effect.

[0062] In some embodiments, the first electrode 610 and the reflective layer 700 are formed from the same material layer in the same process.

[0063] The material of the reflective layer 700 may include at least one of titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), silver (Ag), platinum (Pt), and rhodium (Rh), or an alloy combination of the above metals. This embodiment does not limit this.

[0064] In some embodiments, the angle between the sidewall and top wall of the protrusion 830 ranges from 115° to 145°, and the top wall of the protrusion 830 is located on the side of the protrusion 830 away from the filling portion 820. This is more conducive to the reflection of the oblique light emitted from the sub-pixel region 2011 by the reflective layer 700, further improving the light efficiency.

[0065] In some embodiments, the reflective layer 700 may also cover the top wall of the protrusion 830. This can improve the blackness of the light-emitting device and reduce interference from ambient light.

[0066] Understandably, please refer to the following when actually preparing the product. Figures 2 to 8 A substrate 100 is provided; a chip layer 200 is formed on the substrate 100, the chip layer 200 including a first surface 201 and a second surface 202 opposite to each other in the thickness direction; the chip layer 200 is etched from the second surface 202 side to form a first groove 511, the first groove 511 exposing a first conductive semiconductor layer 210; the first conductive semiconductor layer 210 is etched through the first groove 511 to form a second groove 512, the second groove 512 exposing the substrate 100, in the thickness direction of the substrate 100, the projection of the second groove 512 falls within the projection range of the first groove 511, and the projection area of ​​the second groove 512 is smaller than the projection area of ​​the first groove 511, the first groove 511 and the second groove 512 are connected to form a first isolation groove 510, the first conductive semiconductor layer 210 forms a stepped portion; the substrate 100 is etched through the first isolation groove 510 to form a second isolation groove 520, the first isolation... The isolation trench 510 and the second isolation trench 520 are connected to form an isolation channel 500; a first electrode 610 and a reflective layer 700 are formed from the second surface 202 side, the first electrode 610 covers the sidewall of the first conductive semiconductor layer 210 and is electrically connected to the first conductive semiconductor layer 210, and the reflective layer 700 covers at least the sidewall of the portion of the isolation channel 500 that extends into the substrate 100; an organic material is deposited on the second surface 202 side, the organic material fills the isolation channel 500 and covers the second surface 202 to form a support structure 800, the support structure 800 includes a support portion 810, a filling portion 820 and a protrusion 830, the filling portion 820 fills between two adjacent sub-pixel areas 2011 and surrounds the sidewall of each sub-pixel area 2011, the support portion 810 covers the second surface 202 and the filling portion 820, and the protrusion 830 is connected to the filling portion 820 and extends into the interior of the substrate 100.

[0067] As another optional specific implementation method, please refer to Figure 28 The light-emitting device further includes a reflective layer 700 that covers at least a portion of the sidewall of the protrusion 830.

[0068] In some embodiments, the light-emitting device further includes a passivation layer 900, located at least between the reflective layer 700 and the protrusion 830. Thus, the passivation layer 900 can increase the bonding force between the reflective layer 700 and the protrusion 830, which helps to isolate water and oxygen, protect the color conversion layer 140, and improve device reliability.

[0069] In some embodiments, the passivation layer 900 covers the sidewalls and bottom wall of the pixel slot 130 and the top wall of the protrusion 830. The passivation layer 900 can protect other parts that do not require the fabrication of the reflective layer 700 from damage during the fabrication of the reflective layer 700.

[0070] Optionally, the passivation layer 900 may be made of an inorganic material. Further, the inorganic material may include a transparent inorganic material. Since the first surface 201 is the light-emitting surface of the sub-pixel region 2011, making the passivation layer 900 of a transparent inorganic material can prevent the portion of the passivation layer 900 covering the first surface 201 from affecting light emission.

[0071] The passivation layer 900 may be made of Al2O3 and / or SiN. Al2O3 and / or SiN have high density and good protective effect.

[0072] Optionally, the thickness of the passivation layer 900 ranges from 20 nm to 100 nm.

[0073] Understandably, please refer to the following in the actual preparation process. Figure 7 , Figures 23 to 27 After etching the chip layer 200 from the second surface 202 side to form the first groove 511, the first conductive semiconductor layer 210 is not directly etched through the first groove 511 to form the second groove 512. Instead, the first electrode 610 is first formed from the second surface 202 side, and the first electrode 610 covers the sidewall of the first conductive semiconductor layer 210; the substrate 100 is removed; and then the reflective layer 700 is formed from the first surface 201 side, and the reflective layer 700 at least covers the sidewall of the protrusion 830.

[0074] As one optional implementation method, please refer to Figure 22 The chip layer 200 includes a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 sequentially stacked along the direction from the first surface 201 to the second surface 202. The light-emitting device further includes a second electrode 620, which extends from the bottom wall of the support portion 810 and penetrates the support portion 810 along the direction from the second surface 202 to the first surface 201. The second electrode 620 is conductively connected to the second conductive semiconductor layer 230, and the bottom wall of the support portion 810 is located on the side of the support portion 810 away from the filling portion 820. Thus, the second conductive semiconductor layer 230 is conductively led out through the second electrode 620.

[0075] The material of the second electrode 620 may include at least one of titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and silver (Ag). This embodiment does not limit this.

[0076] Understandably, please refer to the following in the actual preparation process. Figures 11 to 13After the support structure 800 is formed, a conductive via 621 can be formed from the second surface 202 side. The conductive via 621 penetrates the support portion 810 and extends to the second surface 202. A second electrode 620 is formed in the conductive via 621, and the second electrode 620 corresponds to each sub-pixel area 2011.

[0077] In some embodiments, the light-emitting device may further include a conductive layer 300 located between the second electrode 620 and the second conductive semiconductor layer 230, wherein the second electrode 620 and the second conductive semiconductor layer 230 are electrically connected through the conductive layer 300. The conductive layer 300 can serve to amplify the current.

[0078] In some embodiments, the material of the conductive layer 300 may include ITO (Indium Tin Oxide). ITO has high light transmittance, thus avoiding affecting the light extraction efficiency.

[0079] In some embodiments, the light-emitting device may further include a first dielectric layer 410 covering a second surface 202 of the chip layer 200. This protects the chip layer 200 from leakage and other damage.

[0080] In some embodiments, the light-emitting device may further include a second dielectric layer 420 covering the first dielectric layer 410 and the first conductive semiconductor layer 210. This protects the chip layer 200 from leakage and other damage. In some embodiments, the first electrode 610 also covers a portion of the second dielectric layer 420, which covers the top wall of the step portion, the top wall of which is the side of the step portion away from the substrate 100.

[0081] In some embodiments, the light-emitting device may further include a third dielectric layer 430, which at least covers the second dielectric layer 420 and the first electrode 610. Thus, the third dielectric layer 430 protects the front structure from leakage and other damage.

[0082] In some embodiments, the second electrode 620 penetrates at least the first dielectric layer 410, the second dielectric layer 420, and the third dielectric layer 430.

[0083] Understandably, please refer to the following when actually preparing the product. Figures 3 to 10After forming the chip layer 200 on the substrate 100, a conductive layer 300 can be formed on the second surface 202 side, and the conductive layer 300 is electrically connected to the second conductive semiconductor layer 230; then a first dielectric layer 410 is formed, which covers the conductive layer 300 and the chip layer 200; after etching the first dielectric layer 410 and the chip layer 200 from the second surface 202 side to form the first groove 511, a second dielectric layer 420 covering the chip layer 200 can be formed; a patterning process is performed on the second dielectric layer 420, and the etching process is continued using the patterned second dielectric layer 420 as a mask; after forming the first electrode 610, a third dielectric layer 430 can be formed.

[0084] As another optional implementation method, please refer to Figure 33 The chip layer 200 includes a first conductive semiconductor layer 210, an active layer 220, and a second conductive semiconductor layer 230 stacked sequentially along the direction from the first surface 201 to the second surface 202. The light-emitting device also includes a second electrode 620 located on the side of the second surface 202 and corresponding to each sub-pixel region 2011. The second electrode 620 is conductively connected to the second conductive semiconductor layer 230. An opening 801 is formed in the support portion 810. The opening 801 extends inward from the bottom wall of the support portion 810 along the direction from the second surface 202 to the first surface 201 until the second electrode 620 is exposed. The bottom wall of the support portion 810 is located on the side of the support portion 810 away from the filling portion 820.

[0085] Understandably, light-emitting devices need to be connected to circuit boards, and this connection is usually achieved through solder. Specifically, solder, such as solder paste, is applied to the soldering area of ​​the circuit board, and then the pads on the light-emitting device are aligned one-to-one with the soldering areas on the circuit board to achieve soldering. However, solder can easily escape from the soldering area during the soldering process, and the solder material from different soldering areas may come into contact, causing the device to short-circuit and fail. In this specific embodiment, an opening 801 is formed in the support portion 810, so that the second electrode 620 is entirely embedded in the support portion 810, isolating each second electrode 620 from each other. The solder material is confined in the opening 801, preventing the solder material from escaping, and allowing the second electrodes 620 of different sub-pixel areas 2011 to interconnect.

[0086] Understandably, please refer to the following in the actual preparation process. Figure 24 , Figures 29 to 33After forming the first electrode 610 and the reflective layer 700, organic material is not deposited directly on the second surface 202 side. Instead, a second electrode 620 is first formed on the second surface 202 side, corresponding to each sub-pixel area 2011. The second electrode 620 is electrically connected to the second conductive semiconductor layer 230. Then, organic material is deposited on the second surface 202 side, filling the isolation channel 500 and covering the second surface 202 to form a support structure 800. The support portion 810 also covers the second electrode 620. Afterward, an opening 801 is formed in the support portion 810. The opening 801 extends inward from the bottom wall of the support portion 810 along the direction from the second surface 202 to the first surface 201 until the second electrode 620 is exposed. The support portion 810 isolates each second electrode 620. The bottom wall of the support portion 810 is located on the side of the support portion 810 away from the filling portion 820.

[0087] In some embodiments, the material of the support structure 800 includes an organic photosensitive material. Understandably, in some optional embodiments, the second electrode 620 penetrates the support portion 810; in other optional embodiments, the support portion 810 has an opening 801. By using an organic photosensitive material, the desired structure can be formed by exposing and developing the support structure 800 during actual fabrication, avoiding the need for additional mask fabrication and saving process time. Further, the organic material includes PSPI (Photosensitive Polyimide).

[0088] In this embodiment, the pixel slot 130 may include a first pixel slot, a second pixel slot, and a third pixel slot. The first pixel slot corresponds to the first sub-pixel region 2011a, the second pixel slot corresponds to the second sub-pixel region 2011b, and the third sub-pixel slot 130 corresponds to the third sub-pixel region 2011c. In the thickness direction of the chip layer 200, the projection shapes of the first pixel slot, the second pixel slot, and the third pixel slot are the same as the projection shapes of their corresponding first sub-pixel regions 2011a, 2011b, and 2011c, respectively. Of course, in some other embodiments, the projection shapes of the first pixel slot, the second pixel slot, and the third pixel slot may differ from the projection shapes of their corresponding first sub-pixel regions 2011a, 2011b, and 2011c. This application does not impose specific limitations in this regard.

[0089] Optionally, the material of the color conversion layer 140 may include phosphor or quantum dots. Both phosphors and quantum dots undergo electron transitions when excited by external energy, releasing energy in the form of light. Furthermore, by adjusting the composition and size of the phosphors and quantum dots, the emitted color can be controlled, thereby causing each pixel slot 130 to emit light of different colors. In this embodiment, the material of the color conversion layer 140 is quantum dots.

[0090] In this embodiment, the color conversion layer 140 includes a first color conversion layer and a second color conversion layer. The first color conversion layer is located in a first pixel slot and corresponds to a first sub-pixel area 2011a; the second color conversion layer is located in a second pixel slot and corresponds to a second sub-pixel area 2011b. The first color conversion layer can be a red color conversion layer, and the second color conversion layer can be a green color conversion layer. In some embodiments, the color conversion layer 140 further includes a third color conversion layer, located in a third pixel slot and corresponding to a third sub-pixel area 2011c. The third color conversion layer can be a blue color conversion layer.

[0091] The light-emitting device may also include a filter layer 150 covering the pixel slot 130. Understandably, the color conversion layer 140 cannot completely absorb the incident light from the sub-pixel area 2011. Adding a filter layer 150 absorbs the residual light, which helps to further improve the color purity of the light emitted by each sub-pixel area 2011, so as to more accurately control the displayed color; and it also helps to improve the blackness of the light-emitting device, which can reduce the reflection of ambient light, thereby improving the contrast.

[0092] In this embodiment, the filter layer 150 may include a first filter layer and a second filter layer, the first filter layer covering the first pixel slot and the second filter layer covering the second pixel slot. In some embodiments, the filter layer 150 may further include a third filter layer covering the third pixel slot.

[0093] The filter layer 150 can be a color filter (CF) that only allows light within a specific wavelength range to pass through. The type of filter can be set according to the desired color of emitted light. In this embodiment, the first filter layer can be a red filter layer (CF-R), the second filter layer can be a green filter layer (CF-G), and the third filter layer can be a blue filter layer (CF-B). When the light emitted by each sub-pixel area 2011 is blue light, the red and green filter layers can be filter materials used to filter out blue light that is not absorbed by the color conversion layer 140, and the blue filter layer can be a transparent layer or a filter material used to filter wavelengths other than blue light.

[0094] The light-emitting device may also include a protective capping layer 160, a light filter layer 150, and a protrusion 830. It is understood that by providing the protective capping layer 160, the structural strength of the light-emitting device can be improved; on the other hand, the color conversion layer 140, light filter layer 150, and other structures can be effectively isolated from contact with the outside air. For example, when the material of the color conversion layer 140 includes quantum dots, the problem of quantum dot particle decay or even deactivation due to water vapor and oxygen in the air can be reduced, thereby improving the lifespan of the quantum dots.

[0095] The protective capping layer 160 can be made of an insulating material with high light transmittance to avoid affecting the color display of the light-emitting structure. For example, the material of the protective capping layer 160 includes inorganic materials such as silicon oxide (SiO2), silicon nitride (SiN), aluminum oxide (Al2O3), glass, and sapphire, or transparent polymer materials such as silicone and resin.

[0096] Understandably, please refer to the following in the actual preparation process. Figures 14 to 22 After forming the second electrode 621, the chip layer 200 and the carrier plate 120 can be temporarily bonded on the second surface 202 side by a temporary bonding adhesive layer 110; the substrate 100 is thinned; a wet etching process is used to remove the remaining part of the substrate 100 to form a pixel groove 130 corresponding to each sub-pixel area 2011 at the location of the substrate 100, and the protrusion 830 surrounds the pixel groove 130; a color conversion layer 140 is formed in the pixel groove 130; a filter layer 150 is formed covering the pixel groove 130; a protective capping layer 160 is formed, which covers the filter layer 150 and the protrusion 830; the chip layer 200 and the carrier plate 120 are debonded; a dicing film 170 is attached on the first surface 201 side; and the chip is formed by dicing from the second surface 202 side.

[0097] It should be understood that the above embodiments are exemplary and not intended to encompass all possible implementations. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments only illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A light-emitting device, characterized in that, include: A chip layer, comprising a first surface and a second surface that are opposite to each other in the thickness direction; An isolation channel extends from the second surface through the chip layer to divide the chip layer into pixel unit regions comprising one or more sub-pixel regions, the isolation channel being disposed around the sub-pixel regions; A support structure is formed by at least filling the isolation channel with support material. The support structure includes a support portion, a filling portion, and a protrusion. The filling portion surrounds the sidewall of each of the sub-pixel areas. The support portion covers the second surface and the filling portion. The protrusion is connected to the filling portion and extends from the filling portion in a direction away from the second surface. A pixel slot is located on the first surface side and corresponds in position to each of the sub-pixel areas; wherein the protrusion surrounds the pixel slot; A color conversion layer is located within the pixel slot.

2. The light-emitting device according to claim 1, characterized in that, The thickness of the protrusion ranges from 5 μm to 25 μm.

3. The light-emitting device according to claim 1, characterized in that, Also includes: A reflective layer that at least partially covers the sidewalls of the protrusion.

4. The light-emitting device according to claim 3, characterized in that, Also includes: A passivation layer is located at least between the reflective layer and the protrusion.

5. The light-emitting device according to claim 4, characterized in that, Also includes: The passivation layer is made of inorganic materials; and / or the support material is made of organic materials.

6. The light-emitting device according to claim 1, characterized in that, The chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along the direction from the first surface to the second surface; It also includes: a first electrode, covering the sidewall of the first conductive semiconductor layer, wherein the first electrode is conductively connected to the first conductive semiconductor layer; A reflective layer that at least partially covers the sidewalls of the protrusion.

7. The light-emitting device according to claim 6, characterized in that, The first electrode and the reflective layer are formed in the same process based on the same material layer.

8. The light-emitting device according to any one of claims 3 to 7, characterized in that, The included angle between the sidewall and top wall of the protrusion ranges from 115° to 145°, and the top wall of the protrusion is located on the side of the protrusion away from the filling part.

9. The light-emitting device according to claim 1, characterized in that, The chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along the direction from the first surface to the second surface; It also includes: a second electrode, located on the second surface side and corresponding to each of the sub-pixel regions, wherein the second electrode is electrically connected to the second conductive semiconductor layer; An opening is formed in the support portion, which extends inward from the bottom wall of the support portion along the direction from the second surface to the first surface until the second electrode is exposed. The bottom wall of the support portion is located on the side of the support portion away from the filling portion.

10. The light-emitting device according to claim 1, characterized in that, The chip layer includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked along the direction from the first surface to the second surface; It also includes: a second electrode, extending from the bottom wall of the support portion and penetrating the support portion along the direction from the second surface to the first surface, the second electrode being electrically connected to the second conductive semiconductor layer, and the bottom wall of the support portion being located on the side of the support portion away from the filling portion.

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