Photomask processing method
By forming multiple etching barrier layers and etching frames on the photomask surface, the photomask pattern is etched in stages, solving the problem of pattern loss caused by EBM machine occlusion and improving the exposure integrity and pass rate of the photomask.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- QUANYI MASK PHOTOELECTRIC TECH (JINAN) CO LTD
- Filing Date
- 2026-03-24
- Publication Date
- 2026-05-12
AI Technical Summary
In existing technologies, the grounding pins of EBM machines cause the photomask pattern to be missing. Existing solutions are complex to operate and cannot completely solve the occlusion problem, affecting the integrity of photomask exposure and the pass rate.
By forming first and second etch barrier layers on the photomask surface, the etch pattern is divided into two parts. The etch barrier frame is used to expose the shielded area, and the complete pattern is completed in two etching steps, avoiding the need to rotate the pattern to reduce operational risks.
It enhances the integrity of the photomask pattern, reduces the manufacturing difficulty and process conversion risk caused by occlusion, and improves the exposure integrity and pass rate of the photomask.
Smart Images
Figure CN122018226A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of photomask processing technology, and more specifically, to a photomask processing method. Background Technology
[0002] The fabrication of high-end PSM photomasks often employs an EBM (Extended Electron Blower) machine for the exposure process. This machine is equipped with a grounding pin, whose core function is to release the charge accumulated in the electron beam during machine operation, ensuring process stability. However, this grounding pin is located at the edge of the photomask, which physically blocks the light from the exposure device, causing the photomask pattern in the area corresponding to the grounding pin to fail to be properly exposed, ultimately resulting in pattern loss.
[0003] To address this issue, existing technologies employ a solution of rotating the entire photomask pattern by a specific angle to avoid the obstruction area of the grounding pin. However, this solution has several drawbacks: First, its implementation requires collaboration across multiple departments, meticulous work processing, and seamless handover of subsequent procedures, making the operation rigorous and prone to human error risks. Second, different photomasks have varying pattern designs, meaning that even after rotation, the grounding pin may still be obstructed. Third, the physical obstruction problem of the grounding pin is not fundamentally resolved, ensuring that its corresponding position cannot achieve effective exposure, thus compromising the integrity of the photomask exposure and directly impacting the product acceptance rate. Summary of the Invention
[0004] The purpose of this application is to address the shortcomings of the prior art by providing a photomask processing method that can enhance pattern integrity and reduce the potential risks associated with rotating patterns.
[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: This application provides a photomask processing method, comprising: forming a first etch barrier layer on the surface of a product to be processed, wherein the product to be processed includes a substrate layer, a phase shift layer and a light-shielding layer stacked on the substrate layer, the first etch barrier layer covering the light-shielding layer, and having a first etch pattern on the first etch barrier layer; etching the phase shift layer and the light-shielding layer to transfer the first etch pattern onto the phase shift layer and the light-shielding layer; removing the first etch barrier layer and forming a second etch barrier layer on the surface of the product to be processed, wherein the second etch barrier layer has a second etch pattern and a third etch pattern, the third etch pattern and the first etch pattern being combined to form the etch pattern to be processed; etching the light-shielding layer to transfer the second etch pattern onto the light-shielding layer; removing the second etch barrier layer; providing an etch barrier frame and placing the etch barrier frame above the product to be processed, wherein the etch barrier frame exposes at least the area corresponding to the third etch pattern; etching the phase shift layer exposed by the etch barrier frame and then removing the etch barrier frame.
[0006] Optionally, forming a first etch barrier layer on the surface of the product to be processed includes: forming a first photoresist layer on the surface of the product to be processed, inputting a first etch pattern into a first exposure machine, exposing the first photoresist layer using the first exposure machine, and performing a development operation on the exposed first photoresist layer to form the first etch barrier layer.
[0007] Optionally, the first exposure machine is an EBM machine, and the third etching pattern is the same as the pattern to be processed in the area of the product to be processed by the grounding point of the EBM machine.
[0008] Optionally, before forming the first etch barrier layer on the surface of the product to be processed, the method further includes: determining the etch pattern to be processed; before forming the second etch barrier layer on the surface of the product to be processed, the method further includes: recording the pattern difference between the first etch pattern and the etch pattern, and denoting it as the third etch pattern.
[0009] Optionally, forming a second etch barrier layer on the surface of the product to be processed includes: forming a second photoresist layer on the surface of the product to be processed, and inputting a second etch pattern and a third etch pattern into a second exposure machine, exposing the second photoresist layer using the second exposure machine, and performing a development operation on the exposed second photoresist layer to form a second etch barrier layer.
[0010] Optionally, EDA software can be used to record the pattern differences between the first etched pattern and the etched pattern.
[0011] Optionally, the second exposure machine is a laser exposure machine.
[0012] Optionally, the etching barrier frame is provided with a first alignment mark, which is used to align the etching barrier frame with the product to be processed.
[0013] Optionally, etching the phase shift layer and the light-shielding layer includes: using plasma etching to etch the phase shift layer and the light-shielding layer; Etching the phase shift layer exposed by the etch-blocking framework includes: using plasma etching to etch the phase shift layer exposed by the etch-blocking framework.
[0014] Optionally, the substrate layer is a quartz layer, the phase shifting layer is a Mo / Si multilayer film, and the light-shielding layer is a chromium layer.
[0015] The beneficial effects of this application include: This application provides a photomask processing method, comprising: forming a first etch barrier layer on the surface of a product to be processed, wherein the product to be processed includes a substrate layer, a phase shift layer and a light-shielding layer stacked on the substrate layer, the first etch barrier layer covering the light-shielding layer, and having a first etch pattern on the first etch barrier layer; etching the phase shift layer and the light-shielding layer to transfer the first etch pattern onto the phase shift layer and the light-shielding layer; removing the first etch barrier layer and forming a second etch barrier layer on the surface of the product to be processed, wherein the second etch barrier layer has a second etch pattern and a third etch pattern, the third etch pattern and the first etch pattern being combined to form an etch pattern to be processed; etching the light-shielding layer to transfer the second etch pattern and the third etch pattern onto the light-shielding layer; removing the second etch barrier layer; providing an etch barrier frame and placing the etch barrier frame above the product to be processed, wherein the etch barrier frame exposes at least the area corresponding to the third etch pattern; etching the phase shift layer exposed by the etch barrier frame and then removing the etch barrier frame. This photomask processing method divides the etched pattern to be processed into two parts: one part is obtained in a single etching step, and the other part is obtained in a separate etching step. This allows patterns that cannot be reflected in the first etch stop layer during the first etching to be formed in the next etching process, thus obtaining the desired complete etched pattern. The patterns that cannot be reflected in the first etch stop layer during the first etching are generally those in areas of the product surface obscured by the exposure equipment during the formation of the first etch stop layer. In practical applications, a large-area main etched pattern can be formed through the first etching, followed by localized re-etching to create the complete etched pattern. This processing method minimizes the impact of exposure equipment obstruction on photomask processing, enhancing the completeness of the desired etched pattern. Furthermore, when obstruction exists, there is no need to rotate the pattern to avoid the obstructed area, reducing the manufacturing difficulty associated with pattern rotation and minimizing potential risks such as process changeovers. Attached Figure Description
[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 A schematic diagram of the etching pattern to be processed by the photomask processing method provided in the embodiments of this application; Figure 2 This is a schematic diagram of the structure of the product to be processed provided in an embodiment of this application; Figure 3 A flowchart of the photomask processing method provided in the embodiments of this application; Figure 4 One of the schematic diagrams illustrating the fabrication process of the photomask processing method provided in this application embodiment; Figure 5 The second schematic diagram illustrates the fabrication process of the photomask processing method provided in this application embodiment; Figure 6 The third schematic diagram of the preparation process of the photomask processing method provided in the embodiments of this application; Figure 7 Fourth schematic diagram of the preparation process of the photomask processing method provided in the embodiments of this application; Figure 8 Fifth schematic diagram of the fabrication process of the photomask processing method provided in the embodiments of this application; Figure 9 Sixth schematic diagram of the preparation process of the photomask processing method provided in the embodiments of this application; Figure 10 The seventh schematic diagram of the fabrication process of the photomask processing method provided in the embodiments of this application; Figure 11 Eighth schematic diagram of the preparation process of the photomask processing method provided in the embodiments of this application; Figure 12 Schematic diagram nine of the preparation process of the photomask processing method provided in the embodiments of this application; Figure 13 The tenth schematic diagram illustrates the fabrication process of the photomask processing method provided in this application embodiment; Figure 14 This is 11, a schematic diagram of the preparation process of the photomask processing method provided in the embodiments of this application.
[0018] Icons: 10-Product to be processed; 11-Base layer; 12-Phase shift layer; 13-Light-shielding layer; 20-First etch barrier layer; 30-Second etch barrier layer; 40-Etching barrier frame; 50-First photoresist layer; 60-Shading area; 70-Second photoresist layer; 100-Preset pattern; 200-Blank area of the base layer. Detailed Implementation
[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0020] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. It should be noted that, unless otherwise specified, the various features in the embodiments of this application can be combined with each other, and the combined embodiments are still within the protection scope of this application.
[0021] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0022] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0023] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0024] Please refer to Figure 1 and Figure 2 This application provides a photomask processing method for processing a product 10 into a photomask with a preset pattern 100. The formation of the preset pattern 100 of the photomask and the blank area 200 of the substrate layer (i.e., the area not covered on the substrate layer 11) both need to be achieved through an etching step. The core step of the photomask processing method provided in this application is to divide the preset pattern 100 required for the photomask into two parts, one part of which is obtained in one etching step, and the other part of the pattern is obtained in another etching step.
[0025] Specifically, please refer to the following: Figure 3 The photomask processing methods include: S10: A first etching barrier layer is formed on the surface of the product to be processed, wherein the product to be processed includes a substrate layer, a phase shift layer and a light-shielding layer stacked on the substrate layer, the first etching barrier layer covers the light-shielding layer, and the first etching barrier layer has a first etching pattern.
[0026] Please refer to the reference. Figure 4 A first etch barrier layer 20 is formed on the surface of the light-shielding layer 13 of the product to be processed, away from the phase-shifting layer 12. The first etch barrier layer 20 does not completely cover the light-shielding layer 13, but rather has a pre-designed first etch pattern, which is part of a preset pattern 100. The first etch pattern forms a cutout area on the first etch barrier layer 20; the area with the first etch pattern exposes the underlying light-shielding layer 13, while the unpatterned area covers the light-shielding layer 13. The exposed areas of the light-shielding layer 13 are the areas that need to be etched away.
[0027] Optionally, the substrate layer is a quartz layer, the phase shifting layer is a Mo / Si multilayer film, and the light-shielding layer is a chromium layer.
[0028] S20: Etch the phase shift layer and the light-shielding layer to transfer the first etched pattern onto the phase shift layer and the light-shielding layer.
[0029] Please refer to the reference. Figure 5 Using a first etch barrier layer 20 with a first etched pattern as a mask, selective etching is performed on the phase shift layer 12 and the light-shielding layer 13 through an etching process (such as plasma etching), replicating the first etched pattern on the first etch barrier layer 20 onto the phase shift layer 12 and the light-shielding layer 13. The retained areas of the first etch barrier layer 20 protect the underlying phase shift layer 12 and the light-shielding layer 13 from etching, while the cut-out areas of the first etch barrier layer 20 allow the underlying light-shielding layer 13 and the phase shift layer 12 to be etched away. The etching process is completed layer by layer, first etching the light-shielding layer 13 to the surface of the phase shift layer 12, then continuing to etch the phase shift layer 12 to the surface of the substrate layer 11, ultimately forming a pattern structure in which the phase shift layer 12 and the light-shielding layer 13 perfectly match the first etched pattern, completing the pattern transfer from the first etch barrier layer 20 to the functional film layer, forming the basic light-shielding and phase-shifting pattern of the photomask. This step completes the fabrication of a portion of the preset pattern 100.
[0030] S30: Remove the first etching barrier layer and form a second etching barrier layer on the surface of the product to be processed, wherein the second etching barrier layer has a second etching pattern and a third etching pattern, and the third etching pattern and the first etching pattern are combined to form the etching pattern to be processed.
[0031] Please refer to the reference. Figure 6 and Figure 7First, the first etch barrier layer 20 covering the surface of the product 10 to be processed is removed, exposing the surface of the etched light-shielding layer 13. Then, a second etch barrier layer 30 is prepared on the entire surface of the product 10. The second etch barrier layer 30 has a second etch pattern and a third etch pattern. The second and third etch patterns expose the light-shielding layer 13, while the remaining areas are covered and protected by the second etch barrier layer 30. The second etch pattern corresponds to the light-shielding layer that needs to be removed after the first etching. The third etch pattern and the first etch pattern together form the etch pattern to be processed.
[0032] For example, removing the first etch barrier layer includes: removing the layer covering the first etch barrier layer by a dry stripping process; and cleaning the product to be processed to remove residual colloids.
[0033] S40: Etch the light-shielding layer to transfer the second and third etched patterns onto the light-shielding layer.
[0034] Please refer to the reference. Figure 8 Using the second etch barrier layer 30 with the second and third etch patterns as a mask, the light-shielding layer 13 is selectively etched using an etching process (such as plasma etching) to replicate the second and third etch patterns on the second etch barrier layer 30 onto the light-shielding layer 13. The retained areas of the second etch barrier layer 30 protect the underlying film layer from etching, while the light-shielding layer 13 beneath the cut-out areas of the second etch barrier layer 30 is etched away.
[0035] S50: Remove the second etch barrier layer.
[0036] After etching is completed, the second etching barrier layer 30 covering the surface of the product 10 to be processed is removed.
[0037] S60: Provide an etching barrier frame and place the etching barrier frame above the product to be processed, wherein the etching barrier frame exposes at least the area corresponding to the third etching pattern.
[0038] Please refer to the reference. Figure 9 First, an etching barrier frame 40 adapted to the product 10 to be processed is prepared. This frame is a special structure with anti-etching properties. The etching barrier frame 40 is placed on top of the product 10 to be processed. The surface of the etching barrier frame 40 covers the first etched pattern that has been processed on the surface of the product 10 to be processed, but completely exposes the third etched pattern.
[0039] S70: After etching the phase shift layer exposed by the etch-blocking frame, remove the etch-blocking frame.
[0040] Please refer to the reference. Figure 10Using the etch stop frame 40 above the product 10 as a mask, the phase shift layer 12 is etched. The portion of the phase shift layer 12 not covered by the etch stop frame 40 is exposed and etched away, while the remaining areas are protected by the etch stop frame 40 and remain undamaged. By controlling the etching parameters and endpoint, the phase shift layer 12 exposed by the third etch pattern is removed, completing the pattern transfer of this layer and stitching it with the previously etched first pattern to form a complete etched pattern of the phase shift layer 12. After etching is complete, the etch stop frame 40 is removed.
[0041] The aforementioned photomask processing method divides the etched pattern to be processed into two parts: one part is obtained in a single etching process, and the other part is obtained in a separate etching process. This allows patterns that cannot be reflected in the first etching barrier layer 20 during the first etching to be formed in the next etching step, thus obtaining the desired complete etched pattern. The patterns that cannot be reflected in the first etching barrier layer 20 during the first etching are generally those in the area on the surface of the product 10 that is blocked by the exposure machine when the first etching barrier layer 20 is formed. In practical applications, a large-area main etched pattern can be formed through the first etching, and then a complete etched pattern can be formed through localized re-etching.
[0042] The above processing method can minimize the impact of exposure equipment obstruction on photomask processing and enhance the integrity of the required etched pattern. At the same time, when obstruction exists, there is no need to rotate the pattern to avoid the obstructed area 60, which can reduce the manufacturing difficulty caused by rotating the pattern and reduce potential risks such as process changeover.
[0043] Optionally, forming a first etch barrier layer on the surface of the product to be processed includes: S11: A first photoresist layer is formed on the surface of the product to be processed, and the first etching pattern is input into the first exposure machine. The first exposure machine is used to expose the first photoresist layer.
[0044] S12: Perform a development operation on the first photoresist layer after exposure to form the first etch barrier layer.
[0045] Please refer to Figure 4 , Figure 11 and Figure 12 The first etch barrier layer 20 is made of photoresist. Photoresist is uniformly coated onto the surface of the product 10 using a spin-coating process, forming a uniform, defect-free first photoresist layer 50, which serves as the basis for subsequent patterning. The first photoresist layer 50 is then precisely exposed according to a preset first etch pattern, causing a chemical change in the exposed area. The soluble areas of the photoresist are removed by a developing process, leaving a pattern structure consistent with the design, namely the first etch barrier layer 20. This first etch barrier layer 20 can serve as a hard mask for subsequent etching, achieving precise definition of the etched areas and protection of the non-etched areas.
[0046] Optionally, the first exposure machine is an EBM machine, and the third etching pattern is the same as the pattern to be processed in the masked area of the product 10 to be processed by the grounding pin of the EBM machine.
[0047] Please refer to the reference. Figure 1 The EBM (Extended Electron Beam) machine is a maskless direct-write system that can directly read design data from EDA software, flexibly adapting to complex patterns without the need for additional exposure masks, significantly reducing the development cost and cycle time of customized photomasks. Simultaneously, the EBM machine breaks the diffraction limit with nanometer-level electron beam direct writing, achieving a resolution ≤5nm. Exposure uniformity and alignment accuracy are both at the nanometer level, enabling large-area precise pattern exposure, laying the foundation for subsequent local etch work, and fundamentally ensuring the core imaging performance of the photomask, adapting to the stringent requirements of high resolution and high consistency for 10nm and below processes. The structure of the EBM machine dictates that its grounding pin will block the product 10 to be processed. The blocked area 60 cannot be exposed to form an etched pattern, therefore requiring etch work in subsequent steps. The pattern within the blocked area 60 needs to be formed by a third etched pattern on the etch blocking frame 40. Therefore, the third etched pattern at this time is the same as the pattern required by the first exposure machine in the blocked area 60 of the product 10 to be processed.
[0048] Alternatively, please refer to Figure 3 Before forming the first etch barrier layer on the surface of the product to be processed, the method further includes: S80: Determine the etching pattern to be processed.
[0049] Before forming a second etch barrier layer on the surface of the product to be processed, the method further includes: S90: Record the pattern difference between the first etching pattern and the third etching pattern.
[0050] Please refer to the reference. Figure 1 First, determine the etching pattern to be processed, and extract a portion of the etching pattern as the first etching pattern. Then, compare the first etching pattern with the etching pattern to be processed, and record which part of the etching pattern to be processed was not transferred to the product 10 to be processed. This part is recorded as the third etching pattern.
[0051] Optionally, EDA (Electronic Design Automation) software is used to record the pattern difference between the first etched pattern and the etched pattern.
[0052] Optionally, forming a second etch barrier layer on the surface of the product to be processed includes: S31: A second photoresist layer is formed on the surface of the product to be processed, and the second etching pattern and the third etching pattern are input into the second exposure machine. The second exposure machine is used to expose the second photoresist layer.
[0053] S32: Perform a development operation on the exposed second photoresist layer to form a second etch barrier layer.
[0054] Please refer to Figure 7 , Figure 13 and Figure 14 The second etch barrier layer 30 is made of photoresist. Photoresist is coated onto the surface of the product 10 using a spin-coating process to form the second photoresist layer 70, which serves as the basis for subsequent patterning. The second photoresist layer 70 is then precisely exposed according to preset second and third etch patterns, causing a chemical change in the exposed areas of the photoresist. The soluble areas of the photoresist are removed by a developing process, leaving a pattern structure consistent with the design, namely the second etch barrier layer 30. This second photoresist layer serves as a hard mask for subsequent etching, achieving precise definition of the etched areas and protection of the non-etched areas.
[0055] The first exposure machine obstructs the surface of the product 10 to be processed. Therefore, when removing the light-shielding layer 13, it is necessary to switch to an exposure machine that does not obstruct the surface of the product 10. It is understandable that the first exposure is primarily for forming the preset pattern 100 required for the photomask, requiring high exposure precision. The second exposure, however, is for removing the light-shielding layer 13, requiring lower exposure precision; therefore, a different exposure machine can be used.
[0056] Optionally, the second exposure unit is a laser exposure unit. Laser exposure units offer high exposure efficiency, flexible operation, and can save process time.
[0057] Optionally, the etched phase-shifting layer and the light-shielding layer include: S21: The phase shift layer and the light-shielding layer are etched by plasma etching.
[0058] The etched phase-shifted layer exposed by the etched-block framework includes: S71: The phase shift layer exposed by the etched-block framework is obtained by plasma etching.
[0059] Plasma etching is a dry etching process with excellent etching precision, selectivity, and uniformity. It can directionally etch the phase-shifting layer 12 and the light-shielding layer 13, precisely control the etching depth, and minimize damage to the substrate and mask. It ensures nanoscale precision and perpendicularity of the pattern sidewalls, and avoids the swelling and drilling problems caused by liquid phase corrosion. The process is highly controllable, allowing for gas switching to adapt to the etching of different film layers. It can accommodate the multi-step etching requirements of photomasks and improve the pattern transfer yield.
[0060] Optionally, the etching barrier frame 40 is provided with a first alignment mark, which is used to align the etching barrier frame 40 with the product 10 to be processed, so as to ensure the accuracy of etching.
[0061] It should be understood that although the steps in the flowchart of this application are shown sequentially as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowchart may include multiple steps or multiple stages, which are not necessarily completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps.
[0062] The above description is merely an optional embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for processing photomasks, characterized in that, include: A first etching barrier layer is formed on the surface of the product to be processed, wherein the product to be processed includes a substrate layer, a phase shift layer and a light-shielding layer stacked on the substrate layer, the first etching barrier layer covers the light-shielding layer, and the first etching barrier layer has a first etching pattern. The phase-shifting layer and the light-shielding layer are etched to transfer the first etched pattern onto the phase-shifting layer and the light-shielding layer; Remove the first etching barrier layer and form a second etching barrier layer on the surface of the product to be processed, wherein the second etching barrier layer has a second etching pattern and a third etching pattern, and the third etching pattern and the first etching pattern are combined to form the etching pattern to be processed; The light-shielding layer is etched to transfer the second etched pattern and the third etched pattern onto the light-shielding layer; Remove the second etch barrier layer; An etching barrier frame is provided and placed above the product to be processed, wherein the etching barrier frame exposes at least the area corresponding to the third etching pattern; After etching the phase-shifted layer exposed by the etching barrier frame, the etching barrier frame is removed.
2. The photomask processing method as described in claim 1, characterized in that, The formation of the first etching barrier layer on the surface of the product to be processed includes: A first photoresist layer is formed on the surface of the product to be processed, and a first etching pattern is input into a first exposure machine. The first exposure machine is used to expose the first photoresist layer. The first photoresist layer after exposure is developed to form a first etch barrier layer.
3. The photomask processing method as described in claim 2, characterized in that, The first exposure machine is an EBM machine, and the third etching pattern is the same as the pattern to be processed in the shaded area of the product to be processed by the grounding point of the EBM machine.
4. The photomask processing method as described in claim 1, characterized in that, Before forming the first etch barrier layer on the surface of the product to be processed, the method further includes: Determine the etching pattern to be processed; Before forming a second etch barrier layer on the surface of the product to be processed, the method further includes: The pattern difference between the first etched pattern and the etched pattern is recorded and denoted as the third etched pattern.
5. The photomask processing method as described in claim 4, characterized in that, Forming a second etching barrier layer on the surface of the product to be processed includes: A second photoresist layer is formed on the surface of the product to be processed, and the second etching pattern and the third etching pattern are input into a second exposure machine, and the second exposure machine is used to expose the second photoresist layer. The exposed second photoresist layer is developed to form a second etch barrier layer.
6. The photomask processing method as described in claim 4, characterized in that, The pattern differences between the first etched pattern and the etched pattern are recorded using EDA software.
7. The photomask processing method as described in claim 5, characterized in that, The second exposure machine is a laser exposure machine.
8. The photomask processing method as described in claim 1, characterized in that, The etching barrier frame is provided with a first alignment mark, which is used to align the etching barrier frame with the product to be processed.
9. The photomask processing method as described in claim 1, characterized in that, The etching of the phase-shifting layer and the light-shielding layer includes: The phase-shifting layer and the light-shielding layer are etched using plasma etching. The etched phase-shifted layer exposed by the etched-block framework includes: Plasma etching was used to expose the phase shift layer that was blocked by the etched framework.
10. The photomask processing method as described in claim 1, characterized in that, The base layer is a quartz layer, the phase shift layer is a Mo / Si multilayer film, and the light-shielding layer is a chromium layer.