Substrate processing apparatus, substrate processing method, and substrate processing program

Abstract

A substrate processing apparatus for processing a coating film by supplying a processing liquid to a substrate on which the coating film is formed includes: a rotation driving unit that holds and rotates a substrate W; an ejection unit that ejects the processing liquid; a processing liquid supply unit that supplies a processing liquid to the discharge unit; a discharge drive unit that moves the discharge unit to a plurality of different positions in the radial direction of the substrate on the substrate held by the rotation drive unit; and a control unit that controls the processing liquid supply unit and the discharge drive unit in accordance with processing conditions. The processing conditions include: a movement condition in which the movement speed of the ejection unit is defined for each of the plurality of positions; and a flow rate condition in which the flow rate of the processing liquid supplied to the discharge unit is defined for each of the plurality of positions.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a substrate processing method for executing the substrate processing apparatus, and a substrate processing program for executing the substrate processing method on a computer. Background Technology

[0002] A technique for uniformizing the film thickness of a film formed on a substrate during an etching process is known. For example, Patent Document 1 describes a substrate processing apparatus comprising: a rotation holding unit that holds and rotates a substrate; a processing liquid supply unit including a nozzle for spraying processing liquid onto the surface of the substrate; a nozzle driving unit that moves the nozzle in a direction intersecting the rotation center of the substrate; and a control device that controls the nozzle driving unit to repeatedly execute a first speed distribution that varies according to the distance from the rotation center of the substrate, moving the arrival position of the processing liquid from the rotation center side of the substrate to the outer periphery side of the substrate, and a second speed distribution that differs from the first speed distribution, moving the arrival position of the processing liquid from the outer periphery side of the substrate to the rotation center side of the substrate.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2019-54104 Summary of the Invention

[0004] [The problem the invention aims to solve]

[0005] According to Patent Document 1, the flow rate of the processing liquid ejected from the nozzle is constant. Therefore, there is a situation where the processing liquid supplied to the periphery of the substrate scatters outwards from the substrate, resulting in waste. Furthermore, in recent years, from an environmental protection perspective, there has been a desire to reduce the amount of processing liquid supplied to the substrate.

[0006] The purpose of this invention is to provide a substrate processing apparatus that can reduce the consumption of processing liquid.

[0007] [Technical means to solve the problem]

[0008] One aspect of the present invention provides a substrate processing apparatus that processes a coating by supplying a processing liquid to a substrate on which a coating has been formed, and includes: a rotation drive unit that holds the substrate and rotates the substrate; an ejection unit that ejects the processing liquid; a processing liquid supply unit that supplies the processing liquid to the ejection unit; an ejection drive unit that moves the ejection unit to a plurality of different radial positions on the substrate held by the rotation drive unit; and a control unit that controls the processing liquid supply unit and the ejection drive unit according to processing conditions, wherein the processing conditions include: a movement condition that specifies the movement speed of the ejection unit for each of the plurality of positions; and a flow rate condition that specifies the flow rate of the processing liquid supplied to the ejection unit for each of the plurality of positions.

[0009] Another aspect of the substrate processing apparatus of the present invention includes: a rotation drive unit that holds a substrate and rotates the substrate; an ejection unit that ejects a processing liquid; a processing liquid supply unit that supplies processing liquid to the ejection unit; and an ejection drive unit that moves the ejection unit to a plurality of different radial positions on the substrate held by the rotation drive unit; wherein the flow rate of the processing liquid when the ejection unit is located in a peripheral region within a predetermined distance from the periphery of the substrate is less than the flow rate of the processing liquid when the ejection unit is located in a region outside the peripheral region.

[0010] Another aspect of the substrate processing method of the present invention is performed by a substrate processing apparatus that processes a film by supplying a processing liquid to a substrate on which a film has been formed; the substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and an ejection unit that ejects the processing liquid; the substrate processing method includes: a processing liquid supply step of supplying processing liquid to the ejection unit according to movement conditions that define the movement speed of the ejection unit for each of a plurality of positions; and an ejection drive step of moving the ejection unit to a plurality of different positions in the radial direction on the substrate held by the rotation drive unit according to flow conditions that define the flow rate of the processing liquid supplied to the ejection unit for each of the plurality of positions.

[0011] Another aspect of the substrate processing method of the present invention is performed by a substrate processing apparatus that processes a film by supplying a processing liquid to a substrate on which a film has been formed; the substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and an ejection unit that ejects the processing liquid; and the substrate processing method includes: a processing liquid supply step that supplies processing liquid to the ejection unit; and an ejection drive step that moves the ejection unit to a plurality of different radial positions on the substrate held by the rotation drive unit; the processing liquid supply step includes a processing liquid flow rate when the ejection unit is located in a peripheral region within a predetermined distance from the periphery of the substrate, which is less than the processing liquid flow rate when the ejection unit is located in a region outside the peripheral region.

[0012] In another embodiment of the present invention, the substrate processing procedure is executed by a computer that controls a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which a film has been formed; and the substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and an ejection unit that ejects the processing liquid; and the substrate processing procedure causes the computer to execute: a processing liquid supply step, supplying processing liquid to the ejection unit according to movement conditions that specify the movement speed of the ejection unit for each of a plurality of positions; and an ejection drive step, moving the ejection unit to a plurality of different positions in the radial direction on the substrate held by the rotation drive unit according to flow conditions that specify the flow rate of the processing liquid supplied to the ejection unit for each of the plurality of positions.

[0013] In another embodiment of the present invention, the substrate processing procedure is executed by a computer that controls a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which a film has been formed; the substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and an ejection unit that ejects the processing liquid; the substrate processing procedure causes the computer to execute: a processing liquid supply step that supplies processing liquid to the ejection unit; and an ejection drive step that moves the ejection unit to a plurality of different radial positions on the substrate held by the rotation drive unit; the processing liquid supply step includes a processing liquid flow rate that is less than the processing liquid flow rate when the ejection unit is located in a peripheral region within a predetermined distance from the periphery of the substrate.

[0014] [The effects of the invention]

[0015] According to the present invention, a substrate processing apparatus, a substrate processing method, and a substrate processing procedure that can reduce the consumption of processing liquid can be provided. Attached Figure Description

[0016] Figure 1 This is a diagram illustrating the configuration of a substrate processing apparatus according to an embodiment of the present invention.

[0017] Figure 2 This is a diagram used to illustrate the coating treatment.

[0018] Figure 3 This is a diagram used to illustrate the change in the relative position of the nozzle to the substrate.

[0019] Figure 4 It is a diagram used to illustrate the segmented regions.

[0020] Figure 5 This is a diagram illustrating an example of the moving speed of a nozzle under moving conditions.

[0021] Figure 6 This is a diagram illustrating an example of flow conditions.

[0022] Figure 7 This is a diagram illustrating an example of the configuration of a control device.

[0023] Figure 8 This is a block diagram illustrating an example of the functional configuration of a control device.

[0024] Figure 9 This is a flowchart illustrating the process of membrane treatment.

[0025] Figure 10 This is a block diagram of the control device for the first variation example.

[0026] Figure 11 This is a diagram illustrating one example of the rotation conditions in the first variation.

[0027] Figure 12 This is a flowchart illustrating an example of the membrane treatment process in the first variation example.

[0028] Figure 13 This is a diagram illustrating an example of the configuration of the processing fluid supply unit in the second variation.

[0029] Figure 14 This is a block diagram illustrating one example of the function of the control device in the second variation.

[0030] Figure 15 This is a diagram illustrating one example of the processing conditions in the second variation.

[0031] Figure 16 This is a flowchart illustrating an example of the membrane treatment process in the second variation.

[0032] Figure 17 This is a block diagram illustrating one example of the function of the control device in the third variation.

[0033] Figure 18 This is a diagram illustrating one example of the processing conditions in the third variation.

[0034] Figure 19 This is a flowchart illustrating an example of the membrane treatment process in the third variation.

[0035] Figure 20 This is a diagram illustrating an example of the configuration of the processing liquid supply unit in the substrate processing apparatus of the fourth variation.

[0036] Figure 21 This is a block diagram illustrating one example of the function of the control device in the fourth variation.

[0037] Figure 22 This is a flowchart illustrating one example of the membrane treatment process in the fourth variation.

[0038] Figure 23 This is a diagram illustrating an example of the configuration of the processing liquid supply unit in the substrate processing apparatus of the fifth variation.

[0039] Figure 24 This is a block diagram illustrating one example of the function of the control device in the fifth variation.

[0040] Figure 25 This is a diagram illustrating one example of the processing conditions in the fifth variation.

[0041] Figure 26 This is a flowchart illustrating an example of the membrane treatment process in the fifth variation.

[0042] Figure 27 This is a diagram representing an example of a learning model.

[0043] Figure 28 This is a block diagram illustrating an example of the functional configuration of the control device in the second embodiment.

[0044] Figure 29 This is a flowchart illustrating the film treatment process in the second embodiment. Detailed Implementation

[0045] <First Embodiment>

[0046] (1) Overview of the substrate processing apparatus

[0047] Figure 1 This is a diagram illustrating the configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 300 includes a control device 50, a substrate processing unit WU, and a storage tank 32. The control device 50 controls the substrate processing unit WU.

[0048] The control device 50 includes a CPU (Central Processing Unit) and a memory. The CPU executes the program stored in the memory to control the entire board processing device 300.

[0049] The substrate processing unit WU is controlled by the control device 50 to perform a coating process that etches the coating formed on the substrate W. The substrate processing unit WU includes a rotary chuck SC, a rotary motor SM, a nozzle 311, and a nozzle moving mechanism 301. The rotary chuck SC includes a circular plate-shaped rotating base SB held in a horizontal position, and a plurality of chuck pins 306 that can hold the substrate W horizontally above the rotating base SB. Thus, the rotary chuck SC holds the substrate W horizontally. The substrate W is held by the rotary chuck SC. The rotary motor SM has a first rotation axis AX1. The first rotation axis AX1 extends in the vertical direction. The rotary chuck SC is mounted on the upper end of the first rotation axis AX1 of the rotary motor SM. The first rotation axis AX1 of the rotary motor SM is aligned with the center of the substrate W. The rotary motor SM is a stepper motor. In this embodiment, the rotary motor SM rotates at a constant speed (rpm). When the rotary motor SM rotates, the rotary chuck SC rotates around the first rotation axis AX1. Therefore, the substrate W, held by the rotary chuck SC, rotates at a constant speed around the first rotation axis AX1. Thus, the rotational speed of the stepper motor is the same as the rotational speed of the substrate W.

[0050] The processing fluid supply unit PS is controlled by the control device 50 to supply the desired flow rate of processing fluid to the nozzle 311. Specifically, the processing fluid supply unit PS includes a supply pipe 31, a supply pump 33, an on / off valve 34, a flow regulating valve 35, and a flow sensor 36. One end of the supply pipe 31 is connected to a storage tank 32, and the other end of the supply pipe 31 is connected to the nozzle 311. The supply pump 33, the on / off valve 34, the flow regulating valve 35, and the flow sensor 36 are installed on the supply pipe 31. In this embodiment, the storage tank 32 is connected to a processing fluid supply source (not shown) outside the substrate processing apparatus 300 and stores the processing fluid supplied from that source. Alternatively, the storage tank 32 may be disposed in a different housing than the substrate processing apparatus 300 that houses the substrate processing unit WU. The supply pump 33 guides the processing fluid stored in the storage tank 32 to the supply pipe 31. The on / off valve 34, for example, is a ball valve, which can be switched between a state where the processing fluid in the supply pipe 31 is guided to the flow path of the nozzle arm 305, and a state where the processing fluid in the supply pipe 31 is not guided to the flow path of the nozzle arm 305. The flow regulating valve 35 can adjust the flow rate of the processing fluid guided to the flow path of the nozzle arm 305 by adjusting the flow rate of the processing fluid in the supply pipe 31. The flow sensor 36 measures the flow rate of the processing fluid in the supply pipe 31. The control device 50 controls the supply pump 33, the on / off valve 34, the flow regulating valve 35, and the flow sensor 36 installed on the supply pipe 31. Thus, processing fluid can be supplied to the substrate processing unit WU. In addition, by feedback control of the flow regulating valve 35 based on the flow rate in the supply pipe 31 measured by the flow sensor 36, the desired flow rate of processing fluid can be supplied to the substrate processing unit WU. Furthermore, the processing fluid supply unit PS is not limited to the above configuration. The processing fluid supply unit PS may not include part of the above-described equipment, or it may include other equipment.

[0051] The nozzle moving mechanism 301 moves the nozzle 311 horizontally. Specifically, the nozzle moving mechanism 301 includes a nozzle motor 303 and a nozzle arm 305. The nozzle motor 303 rotates about a second rotation axis AX2. The nozzle arm 305 has a long, straight side. One end of the nozzle arm 305 is mounted to the upper end of the second rotation axis AX2. The nozzle 311 is mounted at the other end of the nozzle arm 305. A flow path (not shown) is formed in the nozzle arm 305. The nozzle 311 has an outlet (not shown) for ejecting the treatment liquid, which faces downwards. The flow path of the nozzle arm 305 is connected to the outlet of the nozzle 311.

[0052] The nozzle 311 sprays processing liquid onto the surface (upper surface) of the substrate W held by the rotating chuck SC. Processing liquid is supplied to the nozzle 311 from the processing liquid supply unit PS. The nozzle 311 sprays processing liquid from its outlet toward the surface of the rotating substrate W. The flow rate (ml / min) of the processing liquid supplied from the processing liquid supply unit PS to the nozzle 311 is the same as the flow rate of the processing liquid sprayed from the outlet of the nozzle 311 toward the surface of the rotating substrate W.

[0053] The nozzle motor 303 is, for example, a pulse motor. The position of the nozzle 311 can be detected in real time by measuring the pulses supplied to the nozzle motor 303. When the nozzle motor 303 is activated, the nozzle arm 305 rotates in the horizontal plane around the second rotation axis AX2. Consequently, the nozzle 311, mounted at the other end of the nozzle arm 305, moves (rotates) horizontally at a predetermined speed (mm / sec) around the second rotation axis AX2. While moving horizontally, the nozzle 311 ejects processing liquid from its outlet toward the substrate W.

[0054] The substrate processing unit WU processes the film formed on the substrate W by supplying a processing solution to the substrate W to which the film is formed. The film processing is etching. The processing solution is an etching solution. The substrate processing unit WU performs etching processing on the film formed on the substrate W by supplying the processing solution to the substrate W. In this embodiment, etching processing is performed on the titanium nitride film formed on the substrate W. The etching solution is, for example, fluoronitric acid (a mixture of hydrofluoric acid (HF) and nitric acid (HNO3)), hydrofluoric acid, buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), or phosphoric acid (H3PO4). In this embodiment, the substrate W to be processed has a diameter of 300 mm, but the present invention is not limited to this. In addition, the substrate processing unit WU has a processing cup (not shown) surrounding the rotating chuck SC. The processing cup catches the spilled processing solution when the substrate W is processed by the processing solution.

[0055] Here, the film coating treatment of the substrate W in this embodiment will be described. Figure 2 This is a diagram used to illustrate the coating treatment. Figure 2 In the diagram, the vertical axis represents the film thickness, and the horizontal axis represents the radial position of the substrate. Furthermore, the origin of the horizontal axis represents the center of the substrate. It is desirable that the film thickness formed by the substrate processing apparatus 300 is uniform across the entire substrate W. Therefore, a target film thickness is defined for the processing performed by the substrate processing apparatus 300. The target film thickness is represented by a dashed line. The film thickness of the film formed on the substrate W before processing by the substrate processing apparatus 300 is represented by a solid line. By performing a film coating process on the substrate by supplying etching solution to the film coating of the substrate according to the processing conditions described later by the substrate processing apparatus 300, the film thickness of the film formed on the substrate W is adjusted. The film thickness of the film formed on the substrate W after the film coating process performed by the substrate processing apparatus 300 is represented by a dashed line.

[0056] The difference between the film thickness of the substrate W before processing by the substrate processing apparatus 300 and the film thickness of the substrate W after processing by the substrate processing apparatus 300 is the processing amount (etching amount). In other words, the processing amount represents the reduction in film thickness at a plurality of locations in the radial direction of the substrate W by the substrate processing of the substrate processing apparatus 300. This processing amount is an example of the first processing amount.

[0057] In this embodiment, the control device 50 causes the substrate processing unit WU to perform coating processing according to processing conditions. The processing conditions are pre-stored in the control device 50. In this embodiment, an example is given where the control device 50 stores a plurality of processing conditions. The processing conditions include movement conditions for moving the nozzle 311, flow conditions specifying the flow rate of processing liquid supplied from the nozzle 311 to the substrate W, and rotation conditions specifying the rotation speed of the substrate W. The movement conditions include the movement speed of the nozzle 311 at various radial positions on the substrate and the number of reciprocations of the nozzle 311 within the movement range. The movement range will be described later. The flow conditions are the flow rate of processing liquid ejected from the nozzle 311 at various radial positions on the substrate at different time points. The rotation conditions are the rotation speed of the substrate W at various radial positions on the substrate at different time points.

[0058] In this embodiment, the moving conditions, flow conditions, and rotation conditions are defined as follows: the surface of the substrate is divided into multiple segmented regions by multiple concentric circles of different radii, and the moving speed, flow rate, and rotation speed are defined for the multiple segmented regions.

[0059] Here, we will explain the multiple segmented regions. Figure 3 This is a diagram illustrating the change in the relative position of nozzle 311 with respect to substrate W. (Refer to...) Figure 3This indicates the change in the relative position of nozzle 311 with respect to the substrate W held by the rotating chuck SC. Nozzle 311 moves in the region above the substrate W held by the rotating chuck SC. Since nozzle 311 rotates around the second rotation axis AX2, the trajectory of nozzle 311 is an arc. The trajectory of nozzle 311 passes through the center of the substrate, i.e., the substrate center OP. Here, the trajectory of nozzle 311 is represented by the moving end EP1, which is inside the outer edge of the substrate W, and the other end is represented by the moving end EP2, which is inside the outer edge of the substrate W. The trajectory of nozzle 311 is the range of movement of nozzle 311. The scan of nozzle 311 moving from the automatic moving end EP1 towards the substrate center OP is represented by arrow a1, and the scan of nozzle 311 moving from the substrate center OP towards the moving end EP2 is represented by arrow a2. In addition, the scanning of the nozzle 311 moving from the automatic operating end EP2 towards the center OP of the substrate is indicated by arrow a3, and the scanning of the nozzle 311 moving from the center OP of the substrate towards the operating end EP1 is indicated by arrow a4.

[0060] Figure 4 This is a diagram used to illustrate the segmentation of regions. (See reference...) Figure 4 This indicates that the upper surface of the substrate W is divided into three regions b1 to b3 by a plurality of concentric circles centered on the substrate center OP. Region b3 is a circle, while regions b1 and b2 are annular. Region b1 is an example of a peripheral region. In this embodiment, the radius of region b1 and the radial lengths r3 and r2 of the substrate W for regions b3 and b2 are the same. Alternatively, the radius of region b1 and the radial lengths r3 and r2 of the substrate W for regions b3 and b2 may also be different. Preferably, the radial lengths r1 and r2 of the substrate W for regions b1 and b2 and the radius r3 of region b3 are greater than or equal to the inner diameter of the nozzle 311.

[0061] The movement range of the nozzle 311 is defined based on the flow rate of the processing liquid ejected from the nozzle 311. When the processing liquid ejected from the nozzle 311 collides with the substrate W, it diffuses outward from the collision point on the surface of the substrate W. The smaller the flow rate of the processing liquid, the smaller the amount of processing liquid diffusion. The collision point between the processing liquid and the substrate W is defined such that the area diffused by the processing liquid ejected from the nozzle 311 upon collision with the substrate W falls within the surface of the substrate W. Therefore, the smaller the flow rate of the processing liquid ejected from the nozzle 311, the closer the operating ends EP1 and EP2 can be to the outer edges pe1 and pe2 of the substrate W.

[0062] Based on the scanning period during which the nozzle 311 moves within the range of motion from the operating end EP1 to the operating end EP2, the radial movement trajectory of the nozzle 311 on the substrate defines the movement intervals p1 to p6 of the nozzle 311. Intervals p1 to p6 are portions of the movement range divided by segmented regions b1 to b3. Intervals p1 to p3 are the intervals in the trajectory of the nozzle 311 moving between the operating end EP1 and the substrate center OP that traverse each of the segmented regions b1 to b3. For example, interval p1 is the interval in which the nozzle 311 traverses the segmented region b1 during its movement between the operating end EP1 and the substrate center OP. Additionally, multiple intervals p4 to p6 are the intervals in the trajectory of the nozzle 311 moving between the operating end EP2 and the substrate center OP that traverse each of the segmented regions b1 to b3. For example, interval p6 is the interval in which the nozzle 311 traverses the segmented region b1 during its movement between the operating end EP2 and the substrate center OP. Furthermore, the number of segmented regions b1 to b3 is not limited to three and can be set to any value. In this case, the number of segments to be divided, in other words, the number of multiple intervals, is different.

[0063] Figure 5 This is a diagram illustrating an example of the nozzle's moving speed under moving conditions. (See reference...) Figure 5 When the nozzle 311 is positioned above the operating end EP1, its moving speed is defined as 0. In this embodiment, the period of zero moving speed is set to a preset predetermined period during the moving condition. Therefore, the nozzle 311 stops for a predetermined time when it is positioned above the operating end EP1.

[0064] While nozzle 311 is positioned above interval p1, its moving speed is defined as speed mv1. Since the speed of nozzle 311 is zero at its operating end EP1, the moving speed increases from zero to speed mv1 in the region near the operating end EP1 of interval p1. Furthermore, while nozzle 311 is positioned above interval p2, its moving speed is defined as speed mv2. Near the junction of interval p1 and interval p2, the moving speed decreases from speed mv1 to speed mv2.

[0065] While nozzle 311 is positioned above interval p3, the moving speed of nozzle 311 is defined as speed mv3. Speed ​​mv3 is a value greater than speed mv2 and the same as speed mv1. Near the portion of interval p3 that connects to interval p2, the moving speed increases from speed mv2 to speed mv3.

[0066] While nozzle 311 is above interval p4, its moving speed is defined as speed mv4. Speed ​​mv4 is the same value as speed mv3. While nozzle 311 is above interval p5, its moving speed is defined as speed mv5. Speed ​​mv5 is a value less than speed mv4, and is the same value as speed mv2. Near the portion of interval p4 that connects to interval p5, the moving speed decreases from speed mv4 to speed mv5.

[0067] While nozzle 311 is positioned above interval p6, the moving speed of nozzle 311 is defined as speed mv6. Speed ​​mv6 is a value greater than speed mv5 and the same as speed mv1. Near the portion of interval p6 that connects to interval p5, the moving speed increases from speed mv5 to speed mv6.

[0068] The moving speed of nozzle 311 when it is above the operating end EP2 is defined as 0. In this embodiment, the period during which the moving speed is zero is set to a preset predetermined period. Therefore, nozzle 311 stops for a predetermined time when it is above the operating end EP2. Since the speed of nozzle 311 is zero at the operating end EP2, the moving speed decreases from speed mv6 to zero in the portion near the operating end EP1 of interval p6.

[0069] When the automatic end EP1 moves to the operating end EP2, the nozzle 311 accelerates to speed mv1 after the operating end EP1 stops for a predetermined time. Then, as it approaches interval p2, the nozzle 311 decelerates to speed mv2 and moves at speed mv2 within interval p2. When it enters interval p3, the nozzle 311 accelerates from speed mv2 to speed mv3. Furthermore, the nozzle 311 moves at speed mv4, the same as speed mv3, within interval p4, and decelerates to speed mv5 as it approaches interval p5, moving at speed mv5 within interval p5. When it enters interval p6, the nozzle 311 accelerates from speed mv5 to speed mv6. Then, the nozzle 311 moves at speed mv6 within interval p6, and decelerates to zero speed as it approaches the operating end EP2. The nozzle 311 stops at the operating end EP2 for a predetermined time.

[0070] When the automatic end EP2 moves to the operating end EP1, the nozzle 311 accelerates to speed mv6 after the operating end EP2 stops for a predetermined time. Then, as it approaches interval p5, the nozzle 311 decelerates to speed mv5 and moves at speed mv5 within interval p5. When it enters interval p4, the nozzle 311 accelerates from speed mv5 to speed mv4. Furthermore, the nozzle 311 moves at speed mv3, the same as speed mv4, within interval p3, and decelerates to speed mv2 when it approaches interval p2, moving at speed mv2 within interval p2. When it enters interval p1, the nozzle 311 accelerates from speed mv2 to speed mv1. Then, the nozzle 311 moves at speed mv1 within interval p1, and decelerates to zero speed when it approaches the operating end EP1. The nozzle 311 stops at the operating end EP1 for a predetermined time.

[0071] Figure 6 This is a diagram illustrating an example of flow rate conditions. The flow rate conditions specify the flow rate of the processing liquid when nozzle 311 is located in multiple intervals p1 to p6 of substrate W. (Refer to...) Figure 6 The flow rates of the treated fluid in each interval are explained. Within intervals p1 to p3, the flow rate of the treated fluid is set to a constant and minimum flow rate Fr1 when the nozzle 311 is above interval p1, and to a constant and maximum flow rate Fr3 when the nozzle 311 is above interval p3. In this case, the flow rate Fr2 of the treated fluid when the nozzle 311 is above interval p2 is set such that its value increases as it approaches interval p3 from interval p1.

[0072] Within intervals p4 to p6, when nozzle 311 is above interval p4, the flow rate of the treated fluid is set to a constant and maximum flow rate Fr4, and when nozzle 311 is above interval p6, the flow rate of the treated fluid is set to a constant and minimum flow rate Fr6. In this case, the flow rate Fr5 of the treated fluid when nozzle 311 is above interval p5 is set such that its value decreases as it approaches interval p6 from interval p4.

[0073] The flow rate condition is set such that the flow rate of the processing liquid when the nozzle 311 is located above the intervals p1 and p6 is specified as a value smaller than the flow rate of the processing liquid when the nozzle 311 is located above other intervals p2 to p5.

[0074] Because the flow rate of the processing liquid is relatively small when the nozzle 311 is positioned above intervals p1 and p6, the diffusion of the processing liquid in intervals p1 and p6 onto the surface of the substrate W is relatively small. As described above, the movement range of the nozzle 311 is determined according to the flow rate of the processing liquid when the nozzle 311 is positioned above intervals p1 and p6. Because the flow rate of the processing liquid is relatively small when the nozzle 311 is positioned above intervals p1 and p6, the operating ends EP1 and EP2 can be brought closer to the outer edges pe1 and pe2 of the substrate W. Therefore, the coating processing efficiency in the peripheral region near the outer peripheral edge of the substrate W is improved. In addition, the amount of processing liquid that diffuses onto the surface of the substrate W due to collision with the substrate W and collides with the chuck pin 306 is relatively small, thus reducing the amount of processing liquid that scatters to the outside of the substrate W due to collision with the chuck pin 306.

[0075] (2) Substrate processing controlled by control device 50

[0076] Figure 7 This is a diagram illustrating an example of the configuration of the control device 50. (Refer to...) Figure 7 The control device 50 consists of a CPU 511, RAM (Random Access Memory) 512, ROM (Read Only Memory) 513, storage device 514, and input / output I / F 517. The CPU 511, RAM 512, ROM 513, storage device 514, and input / output I / F 517 are connected to the bus 518.

[0077] RAM 512 is used as the operating area for CPU 511. ROM 513 stores the system program. Storage device 514 includes a storage medium such as a hard disk or semiconductor memory, and stores the program.

[0078] Additionally, the CD-ROM 519 containing the program can be loaded and unloaded from the storage device 514. The CPU 511 downloads the program recorded on the hard disk, semiconductor memory, or CD-ROM 519 to the RAM 512 and executes it. The input / output I / O 517 is a communication interface that allows the CPU 511 to be connected to external devices.

[0079] Furthermore, the recording medium for storing the program executed by the CPU 511 is not limited to the CD-ROM 519, but can also be a semiconductor memory medium such as an optical disc (MO (Magnetic Optical Disc) / MD (Mini Disc) / DVD (Digital Versatile Disc)), IC card, optical card, mask ROM, EPROM (Erasable Programmable ROM), etc. Moreover, the program stored in the storage device 514 can be downloaded to the RAM 512 and executed by the CPU 511 by either downloading the program from a computer connected to the network and storing it in the storage device 514, or by writing the program to the storage device 514 from a computer connected to the network. The program mentioned here includes not only programs that can be directly executed by the CPU 511, but also source programs, compressed programs, encrypted programs, etc.

[0080] Figure 8 This is a block diagram illustrating an example of the functional configuration of the control device 50. The control device 50 includes an operation receiving unit 510, a storage device 514, a processing condition acquisition unit 520, an ejection drive control unit 530, a processing liquid supply control unit 540, and a rotation drive control unit 550. The operation receiving unit 510 receives user input via an input device such as a keyboard. The operation receiving unit 510 receives processing procedure information input by the user. The processing procedure information includes processing condition identification information for identifying the processing conditions under which the substrate processing unit WU performs film coating treatment on the substrate W, which is designated as the processing target. The processing condition acquisition unit 520 acquires the processing conditions by reading the processing condition identification information included in the processing procedure information from the storage device 514.

[0081] The processing condition acquisition unit 520 includes a movement condition acquisition unit 522, a flow rate condition acquisition unit 523, and a rotation condition acquisition unit 524. The movement condition acquisition unit 522 acquires the movement conditions included in the processing conditions read from the storage device 514 and outputs the acquired movement conditions to the ejection drive control unit 530. Here, to acquire... Figure 5 The following explanation will be based on the case where the moving speed and the number of reciprocations is 1. The flow rate condition acquisition unit 523 acquires the flow rate conditions included in the processing conditions read from the storage device 514, and outputs the acquired flow rate conditions to the processing fluid supply control unit 540. Here, the acquisition... Figure 6 The following example illustrates the flow conditions shown.

[0082] The rotation condition acquisition unit 524 acquires the rotation conditions included in the processing conditions read from the storage device 514, and outputs the acquired rotation conditions to the rotation drive control unit 550. The rotation condition is the rotational speed of the substrate at each of a plurality of positions on the substrate. The rotational speed is the rotational speed of the substrate per unit time. Here, the example will be described as acquiring rotation conditions in which the rotational speeds of the substrate at each of the plurality of positions on the substrate are set to the same rotational speed R.

[0083] The ejection drive control unit 530 controls the nozzle motor 303 according to the movement conditions input by the self-movement condition acquisition unit 522, so that the nozzle 311 moves on the substrate W. During the movement of the nozzle 311 on the substrate W, the ejection drive control unit 530 detects the relative position of the nozzle 311 with respect to the substrate W, and outputs the detected relative position to the processing liquid supply control unit 540.

[0084] The processing fluid supply control unit 540 receives flow conditions from the flow condition acquisition unit 523 and receives the relative position of the nozzle 311 to the substrate W from the ejection drive control unit 530. The processing fluid supply control unit 540 controls the processing fluid supply unit PS according to the flow conditions and the relative position of the nozzle 311 to the substrate W. Specifically, the processing fluid supply control unit 540 determines the flow rate of the processing fluid specified by the flow conditions based on the relative position of the nozzle 311 to the substrate W, and controls the processing fluid supply unit PS to supply the processing fluid to the nozzle 311 at the determined flow rate.

[0085] The rotation drive control unit 550 controls the rotation motor SM according to the rotation conditions. Here, the rotation conditions are set to a constant rotation speed R. Therefore, the rotation drive control unit 550 controls the rotation motor SM to rotate the substrate W at the rotation speed R specified by the rotation conditions.

[0086] Figure 9 This is a flowchart illustrating the coating process. The coating process is performed by the CPU 511, which executes a substrate processing program stored in RAM 512, through the CPU 511 of the control device 50. (See reference...) Figure 9 The CPU 511 of the control device 50 acquires the processing conditions (step S1). Specifically, the CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from the storage device 514. From the plurality of processing conditions stored in the storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information.

[0087] In step S2, the CPU 511 initiates the rotation of the substrate W and the movement of the nozzle 311. Specifically, the CPU 511 controls the rotary motor SM to rotate the substrate W according to the rotation conditions included in the processing conditions. Furthermore, the CPU 511 controls the nozzle motor 303 to move the nozzle 311 according to the movement speed and reciprocating frequency specified by the movement conditions included in the processing conditions. Since the rotation conditions specify a constant rotation speed, the substrate W rotates at a constant rotation speed. In addition, the nozzle 311 begins to move at the movement speed specified by the movement conditions.

[0088] In the next step S3, the CPU 511 obtains the position of the nozzle 311. It obtains the relative position of the nozzle 311 with respect to the substrate W. The CPU 511 obtains the relative position based on instructions such as the number of pulses output to the nozzle motor 303. Alternatively, the CPU 511 can also obtain the relative position based on the rotation angle of the nozzle motor 303 detected by the encoder.

[0089] In the next step S4, CPU 511 determines the flow rate. Specifically, CPU 511 determines the flow rate of the processing liquid based on the flow conditions and the relative position of the nozzle 311 to the substrate W. CPU 511 uses the flow conditions included in the processing conditions obtained in step S1, corresponding to the relative position of the nozzle 311 obtained in step S3, to determine the flow rate specified by the flow conditions.

[0090] In the next step S5, the CPU 511 supplies the processing fluid at the flow rate specified in step S4. The CPU 511 controls the processing fluid supply unit PS to supply the processing fluid to the nozzle 311 at the flow rate determined in step S4. In the next step S6, the CPU 511 determines whether the movement of the nozzle 311 has ended. Here, the determination of whether the movement of the nozzle 311 has ended is based on whether the number of reciprocations within the movement range reaches the number of reciprocations included in the movement condition. If the movement of the nozzle 311 has not ended, the CPU 511 returns the process to step S3; if the movement of the nozzle 311 has ended, the process ends.

[0091] (3) Effects of the implementation method

[0092] According to the substrate processing apparatus 300 of the above embodiment, the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied to the nozzle 311 are adjusted for each of a plurality of different radial positions on the substrate W. If the radial positions of the nozzle 311 on the substrate W are different, the circumferential speed of the substrate W will be different. Furthermore, the processing liquid supplied to the substrate W moves outward by centrifugal force. Because the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied to the nozzle 311 are adjusted for each of the plurality of positions, the film formed on the substrate W can be processed effectively.

[0093] According to the substrate processing apparatus 300 of the above embodiment, when the nozzle 311 is located in the dividing region b1 (see reference...), Figure 4 During the period when the processing liquid is in the segmented region b1, the flow rate of the processing liquid supplied to the nozzle 311 is less than the flow rate of the processing liquid supplied to the nozzle 311 during the periods when the segmented region b1 is located at the periphery of the substrate W. Therefore, the area of ​​the processing liquid that diffuses on the substrate W after being supplied to the substrate W in the segmented region b1 can be reduced. As a result, the outward scattering of the processing liquid supplied to the segmented region b1 due to the rotation of the substrate W is suppressed. Thus, a substrate processing apparatus 300 that reduces the consumption of processing liquid for processing the film formed on the substrate W can be provided.

[0094] Additionally, because the nozzle 311 is located in the segmented region b1 at the periphery of the substrate (see reference...) Figure 4 During this period, the flow rate of the processing liquid ejected from the nozzle 311 decreases, thus suppressing the scattering of the processing liquid supplied to the substrate W to the outside of the substrate W. In addition, the amount of processing liquid colliding with the chuck pin 306 can be reduced, further suppressing the scattering of the processing liquid to the outside of the substrate W.

[0095] When the direction of movement of nozzle 311 is reversed within the segmentation region b1 located at the periphery of substrate W, the movement speed of nozzle 311 becomes zero. In the segmentation region b1, when the flow rate of the processing liquid supplied from nozzle 311 is small, the time for supplying the processing liquid also becomes longer. Therefore, the amount of film processed in the segmentation region b1 can be set to an appropriate value.

[0096] (4) Example of the first variation

[0097] The rotation condition is the rotational speed of the substrate W at various time points when the nozzle 311 is located at different radial positions on the substrate. In the above embodiment, the rotation condition is set to a constant rotational speed. In the substrate processing apparatus 300 of the first variation, the rotation condition is set to a condition where the rotational speed is different when the nozzle 311 is located at different radial positions on the substrate.

[0098] Figure 10 This is a block diagram illustrating one example of the function of the control device 50 in the first variation. (See reference...) Figure 10 ,and Figure 8 The difference in function is that the rotation conditions output by the rotation condition acquisition unit 524 to the rotation drive control unit 550 are different, and the relative position of the nozzle 311 to the substrate W is input from the ejection drive control unit 530 to the rotation drive control unit 550. Other functions are different. Figure 8 The functions shown are the same, so they will not be explained again here.

[0099] The rotation drive control unit 550 receives rotation conditions from the rotation condition acquisition unit 524 and receives the relative position of the nozzle 311 to the substrate W from the ejection drive control unit 530. The rotation drive control unit 550 controls the rotation motor SM according to the rotation conditions and the relative position of the nozzle 311 to the substrate W. Specifically, the rotation drive control unit 550 determines the rotation speed specified by the rotation conditions based on the relative position of the nozzle 311 to the substrate W, and controls the rotation motor SM such that the substrate W rotates at the determined rotation speed.

[0100] Figure 11 This diagram illustrates one example of the rotation conditions in the first variation. The rotation conditions represent the rotational speed of the substrate W when the nozzle 311 is located in a plurality of intervals p1 to p6 of the substrate W. (Refer to...) Figure 11 The rotational speed of the substrate W in each interval is explained. In intervals p1 to p3, during the period when the nozzle 311 is above interval p1, the rotational speed of the substrate W is set to a constant and minimum rotational speed rv1. During the period when the nozzle 311 is above interval p3, the rotational speed of the substrate W is set to a constant and maximum rotational speed rv3. In this case, the rotational speed rv2 of the substrate W during the period when the nozzle 311 is above interval p2 is set such that its value increases as it approaches interval p3 from interval p1.

[0101] Within intervals p4 to p6, during the period when nozzle 311 is above interval p4, the rotational speed of substrate W is set to a constant and maximum rotational speed rv4, and during the period when nozzle 311 is above interval p6, the rotational speed of substrate W is set to a constant and minimum rotational speed rv6. In this case, the rotational speed rv5 of substrate W during the period when nozzle 311 is above interval p5 is set such that its value decreases as it approaches interval p6 from interval p4.

[0102] Figure 12 This is a flowchart illustrating an example of the membrane treatment process in the first variation example. Figure 12 The processing shown is the same as Figure 9 The difference in the processing shown is that step S1 is changed to step S1A, and steps S7 and S8 are added between steps S5 and S6. Because other processes are different... Figure 9 The processing is the same as described above, so it will not be repeated here.

[0103] CPU 511 acquires processing conditions (step S1A). Specifically, CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from storage device 514. From the plurality of processing conditions stored in storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information. The processing conditions acquired here include movement conditions, flow conditions, and rotation conditions. The rotation condition is... Figure 11 The rotation conditions are shown.

[0104] In step 7, CPU 511 determines the rotation speed. Specifically, CPU 511 determines the rotation speed based on the rotation conditions and the relative position of nozzle 311 with respect to substrate W. CPU 511 uses the rotation conditions included in the processing conditions obtained in step S1A, corresponding to the relative position of nozzle 311 obtained in step S3, to determine the rotation speed specified by the rotation conditions.

[0105] In the next step S8, CPU 511 rotates the substrate W at the determined rotational speed, causing the process to proceed to step S6. CPU 511 controls the rotary motor SM to rotate the substrate W at the rotational speed determined in step S7.

[0106] In the first variation, in addition to adjusting the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied by the nozzle 311 for each of the plurality of intervals p1 to p6, the rotational speed of the substrate W is also adjusted. This makes it easy to adjust the amount of processing liquid supplied to different radial positions on the substrate W. Furthermore, the coating formed on the substrate W can be processed more effectively. In particular, the rotational speed is minimal in intervals p1 and p6 where the nozzle 311 is located in the outermost segmented region b1 of the substrate W. After the processing liquid ejected from the nozzle 311 falls onto the substrate W, the rotating substrate W is subjected to centrifugal force and moves outward from the surface of the substrate W. Because the rotational speed is minimal, the centrifugal force on the processing liquid from the substrate W is relatively small. Therefore, since the speed at which the processing liquid moving on the upper surface of the substrate W collides with the chuck pin 330 can be minimized, the amount of processing liquid scattering due to collision with the chuck pin 330 can be suppressed.

[0107] Furthermore, since the peripheral velocity is faster the further out of the substrate W, the processing liquid is less susceptible to the effects of vaporization heat. In the first variation, in the intervals p1 and p6 of the outermost segmented region b1 of the nozzle 311 on the substrate W, the rotational speed is the lowest, thus the effects of vaporization heat on the processing liquid are relatively small.

[0108] (5) Second variation example

[0109] In the first embodiment described above, the substrate processing apparatus 300 adjusts the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied to the nozzle 311 for each of a plurality of different radial positions on the substrate W. In the second variation, the substrate processing apparatus 300 further adjusts the temperature of the processing liquid for each of the plurality of different radial positions on the substrate W, compared to the first embodiment. Hereinafter, the differences between the second variation and the first embodiment will be mainly described.

[0110] Figure 13 This is a diagram illustrating an example of the configuration of the processing fluid supply unit PS in the second variation. (Refer to...) Figure 13 In the second variation example, the processing liquid supply unit PS and Figure 1 The difference between the processing fluid supply unit PS shown is the addition of a heater 37. The heater 37 is located downstream of the flow sensor 36 of the supply pipe 31. The heater 37 is an electric heater. The heater 37 is controlled by the control device 50 to heat the processing fluid flowing through the supply pipe 31.

[0111] Figure 14 This is a block diagram illustrating one example of the function of the control device 50 in the second variation. (See reference...) Figure 14 ,and Figure 8 The difference in function is that the processing condition acquisition unit 520 is changed to a processing condition acquisition unit 520A, and a processing liquid temperature control unit 551 is added. Figure 14 Other functions shown Figure 8 The functions shown are the same, so they will not be explained again here.

[0112] The processing condition acquisition unit 520A includes a temperature condition acquisition unit 525. The temperature condition acquisition unit 525 acquires the temperature conditions included in the processing conditions read from the storage device 514 and outputs the acquired temperature conditions to the processing liquid temperature control unit 551. The temperature conditions are information related to the temperature of the processing liquid at each of a plurality of locations on the substrate W. Here, the temperature conditions are information specifying the state of the heaters 37 at each of the plurality of locations on the substrate W. The state of the heaters 37 is either ON or OFF.

[0113] The processing fluid temperature control unit 551 receives temperature conditions from the temperature condition acquisition unit 525 and receives the relative position of the nozzle 311 to the substrate W from the ejection drive control unit 530. The processing fluid temperature control unit 551 controls the heater 37 according to the temperature conditions and the relative position of the nozzle 311 to the substrate W. Specifically, the processing fluid temperature control unit 551 determines the state of the heater 37 as specified by the temperature conditions based on the relative position of the nozzle 311 to the substrate W, and controls the heater 37 in such a way that the heater 37 is in the determined state.

[0114] Figure 15 This is a diagram illustrating one example of the processing conditions in the second variation. (See reference...) Figure 15 This represents the processing conditions in six intervals p1 to p6. The processing conditions are represented in the upper section as the state of heater 37, in the middle section as the flow rate of the processing liquid, and in the lower section as the moving speed of nozzle 311.

[0115] Referring to the moving speed of nozzle 311 shown in the following paragraph, the moving speed of nozzle 311 when it is located above the operating end EP1 is defined as 0. During the period when nozzle 311 is above intervals p1 to p3, the moving speed of nozzle 311 increases. During the period when nozzle 311 is above intervals p4 and p6, the moving speed of nozzle 311 decreases. During the period when nozzle 311 is above intervals p1 to p6, nozzle 311 causes changes in both acceleration and moving speed.

[0116] Referring to the flow rate of the processing fluid shown in the middle section, the flow rate of the processing fluid is set to an increasing value during the period when the nozzle 311 moves above interval p1. In this case, the flow rate of the processing fluid during the period when the nozzle 311 is above interval p1 is set such that the value increases as it approaches interval p2 from interval p1. During the period when the nozzle 311 is above intervals p2 to p5, the flow rate of the processing fluid is set to a constant and maximum flow rate. During the period when the nozzle 311 moves above interval p6, the flow rate of the processing fluid is set to a decreasing flow rate. In this case, the flow rate of the processing fluid during the period when the nozzle 311 is above interval p6 is set such that the value decreases as it approaches the operating end EP2.

[0117] The flow rate condition is set such that the flow rate of the processing liquid when the nozzle 311 is located above intervals p1 and p6 is a smaller value than the flow rate of the processing liquid when the nozzle 311 is located above other intervals p2 to p5. Because the flow rate of the processing liquid is relatively small when the nozzle 311 is located above intervals p1 and p6, the consumption of processing liquid in intervals p1 and p6 can be reduced. Furthermore, the amount of processing liquid that splashes outwards onto the substrate W can be reduced.

[0118] Referring to the state of heater 37 shown in the previous paragraph, heater 37 is set to be on while nozzle 311 is moving above intervals p1 and p6. When nozzle 311 is above intervals p2 to p5, heater 37 is set to be off. The temperature of the processed liquid when nozzle 311 is above intervals p1 and p6 is higher than the temperature of the processed liquid when nozzle 311 is above intervals p2 to p5.

[0119] The flow rate of the processing liquid during the period when nozzle 311 moves above intervals p1 and p6 is less than the flow rate of the processing liquid during the period when nozzle 311 moves above intervals p2 to p5. Conversely, the temperature of the processing liquid during the period when nozzle 311 moves above intervals p1 and p6 is higher than the temperature of the processing liquid during the period when nozzle 311 moves above intervals p2 to p5. Therefore, the amount of film processed in intervals p1 to p6 can be made nearly uniform.

[0120] Figure 16 This is a flowchart illustrating an example of the membrane treatment process in the second variation. Figure 16 The processing shown is the same as Figure 9 The difference in the processing shown is that step S1 is changed to step S1B, and steps S21 to S23 are added between steps S5 and S6. Because other processes are different... Figure 9 The processing is the same as described above, so it will not be repeated here.

[0121] CPU 511 acquires processing conditions (step S1B). Specifically, CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from storage device 514. From the plurality of processing conditions stored in storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information. The processing conditions acquired here include... Figure 15 The movement conditions, flow conditions, and temperature conditions are shown.

[0122] In step S21, CPU 511 branches the processing based on the state of heater 37. Under the temperature conditions included in the processing conditions obtained in step S1B, CPU 511 obtains the state of heater 37 as specified for the position of nozzle 311 obtained in step S3. If heater 37 is in an open state, CPU 511 proceeds to step S22; if heater 37 is in a closed state, CPU 511 proceeds to step S23. In step S22, CPU 511 sets heater 37 to open, proceeding to step S6. In step S23, CPU 511 sets heater 37 to close, proceeding to step S6.

[0123] In the second variation, in addition to adjusting the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied by the nozzle 311 for each of the plurality of intervals p1 to p6, the temperature of the processing liquid is also adjusted. This allows for easy adjustment of the amount of film processed at each of the plurality of different positions in the radial direction of the substrate W. Therefore, the film formed on the substrate W can be processed more effectively.

[0124] Furthermore, the substrate processing apparatus 300 in the second variation can also adjust the rotation speed of the substrate W for each of the plurality of intervals p1 to p6, just like in the first variation.

[0125] (6) Example of the third variation

[0126] In the second variation described above, the substrate processing apparatus 300 adjusts the temperature of the processing liquid by turning the heater 37 on or off. In the third variation, the substrate processing apparatus 300 adjusts the temperature of the processing liquid by varying the heating power of the heater 37. Hereinafter, the differences between the substrate processing apparatus 300 in the third variation and the substrate processing apparatus 300 in the second variation will be mainly explained. The configuration of the processing liquid supply unit PS in the third variation is different from... Figure 13 The structures shown are the same.

[0127] Figure 17 This is a block diagram illustrating one example of the function of the control device 50 in the third variation. (See reference...) Figure 17 ,and Figure 14 The functional difference shown is that the temperature condition acquisition unit 525 is changed to 525A, and the processing liquid temperature control unit 551 is changed to processing liquid temperature control unit 551A. Therefore... Figure 17 Other functions shown Figure 14 The functions shown are the same, so they will not be explained again here.

[0128] The temperature condition acquisition unit 525A acquires the temperature conditions included in the processing conditions read from the storage device 514 and outputs the acquired temperature conditions to the processing liquid temperature control unit 551A. The temperature conditions are information related to the temperature of the processing liquid at each of a plurality of locations on the substrate W. Here, the temperature conditions specify the heating amount of the heaters 37 at each of the plurality of locations on the substrate W. The greater the set heating amount, the greater the heat imparted by the heaters 37 to the processing liquid.

[0129] The processing liquid temperature control unit 551A receives temperature conditions from the temperature condition acquisition unit 525 and the relative position of the nozzle 311 to the substrate W from the ejection drive control unit 530. The processing liquid temperature control unit 551A controls the heater 37 according to the temperature conditions and the relative position of the nozzle 311 to the substrate W. Specifically, the processing liquid temperature control unit 551A determines the heating amount specified by the temperature conditions based on the relative position of the nozzle 311 to the substrate W, and sets the heating amount for the heater 37. The heater 37 heats the processing liquid with heat corresponding to the set heating amount.

[0130] Figure 18 This is a diagram illustrating one example of the processing conditions in the third variation. (See reference...) Figure 18 This indicates the processing conditions for the substrate W, which is radially divided into six plurality of intervals p1 to p6. The processing conditions are represented in the upper section by the state of the heater 37, in the middle section by the flow rate of the processing liquid, and in the lower section by the moving speed of the nozzle 311. The moving speed of the nozzle 311 shown in the lower section and the flow rate of the processing liquid shown in the middle section are related to... Figure 15 The same as shown.

[0131] Referring to the heating amount of heater 37 shown above, the heating amount of heater 37 is set to gradually decrease while nozzle 311 is moving above interval p1. While nozzle 311 is above intervals p2 to p5, the heating power of nozzle 311 is set to 0. While nozzle 311 is moving above interval p6, the heating amount of heater 37 is set to gradually increase. The temperature of the processed liquid while nozzle 311 is above intervals p1 and p6 is higher than the temperature of the processed liquid while nozzle 311 is above intervals p2 to p5. Furthermore, the temperature of the processed liquid while nozzle 311 is above intervals p1 and p6 is higher the closer nozzle 311 is to the outer periphery of substrate W.

[0132] The flow rate of the processing liquid during the period when nozzle 311 moves above intervals p1 and p6 is less than the flow rate of the processing liquid during the period when nozzle 311 moves above intervals p2 to p5. Conversely, the temperature of the processing liquid during the period when nozzle 311 moves above intervals p1 and p6 is higher than the temperature of the processing liquid during the period when nozzle 311 moves above intervals p2 to p5. Therefore, the amount of film processed in intervals p1 to p6 can be made nearly uniform.

[0133] Furthermore, the temperature of the processing liquid during the period when the nozzle 311 is located above intervals p1 and p6 is higher the closer the nozzle 311 is to the outer periphery of the substrate W. Therefore, the amount of film formed on the substrate in intervals p1 and p6 can be adjusted more precisely.

[0134] Figure 19This is a flowchart illustrating an example of the membrane treatment process in the third variation. Figure 19 The processing shown is the same as Figure 9 The difference in the processing shown is that step S1 is changed to step S1C, and steps S21A and S22A are added between steps S5 and S6. Because other processes are different... Figure 9 The processing is the same as described above, so it will not be repeated here.

[0135] CPU 511 acquires processing conditions (step S1C). Specifically, CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from storage device 514. From a plurality of processing conditions stored in storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information. The processing conditions acquired here include... Figure 18 The movement conditions, flow conditions, and temperature conditions are shown. The temperature conditions specify the heating amount of the heaters 37 at multiple locations on the substrate W.

[0136] In step S21A, CPU 511 determines the heating amount of heater 37. Under the temperature conditions included in the processing conditions obtained in step S1B, the heating amount of heater 37 is determined for the position of nozzle 311 obtained in step S3. In step S22A, CPU 511 sets the heating amount of heater 37, causing the process to proceed to step S6.

[0137] In the third variation, in addition to adjusting the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied by the nozzle 311 for each of the plurality of intervals p1 to p6, the temperature of the processing liquid is also adjusted. This allows for easy adjustment of the amount of film processed at different locations in the radial direction of the substrate W. Furthermore, in intervals p1 and p6, the processing liquid supplied is at a higher temperature closer to the outer periphery of the substrate W. Therefore, the amount of film processed in intervals p1 and p6 can be adjusted more precisely. Consequently, the film formed on the substrate W can be processed more effectively.

[0138] Furthermore, the substrate processing apparatus 300 in the third variation can also adjust the rotation speed of the substrate W for each of the plurality of intervals p1 to p6, just like in the first variation.

[0139] (7) Example of the 4th variation

[0140] In the second and third variations described above, the substrate processing apparatus 300 uses a heater 37 to adjust the temperature of the processing solution. In the fourth variation of the substrate processing apparatus 300, an example will be given where the processing solution is a mixture of deionized water (DIW), ammonia (NH4OH), and hydrogen peroxide (H2O2). Furthermore, a preset mixing ratio of the processing solution is used. For example, the mixing ratio of the processing solution is 2 for ammonia, 3 for hydrogen peroxide, and 1000 for DIW. In the fourth variation, the substrate processing apparatus 300 adjusts the temperature of the processing solution by varying the mixing ratio of DIW at a first temperature and DIW at a second temperature (different from the first temperature). Hereinafter, the differences between the fourth variation and the second variation of the substrate processing apparatus 300 will be mainly explained.

[0141] Figure 20 This diagram illustrates an example of the configuration of the processing liquid supply unit in the substrate processing apparatus of the fourth variation. (Refer to...) Figure 20 The substrate processing apparatus 300 of the fourth variation includes a first storage box 32A to a fourth storage box 32D.

[0142] The first storage tank 32A stores DIW at a first temperature. A first heater 37A is provided in the first storage tank 32A. The first heater 37A heats the DIW stored in the first storage tank 32A. Thus, the temperature of the DIW stored in the first storage tank 32A is maintained at the first temperature.

[0143] The second storage tank 32B stores DIW at a second temperature. The second temperature is lower than the first temperature. A second heater 37B is provided in the second storage tank 32B. The second heater 37B heats the DIW stored in the second storage tank 32B. Thus, the temperature of the DIW stored in the second storage tank 32B is maintained at the second temperature.

[0144] Storage tank 32C stores ammonia water (NH4OH). The ammonia water stored in storage tank 32C is kept at room temperature. Storage tank 42D stores hydrogen peroxide water (H2O2). The hydrogen peroxide water stored in storage tank 42D is kept at room temperature.

[0145] The processing fluid supply unit PS includes a first processing fluid supply unit PS1, a second processing fluid supply unit PS2, a third processing fluid supply unit PS3, a fourth processing fluid supply unit PS4, and a mixing valve 38. The first processing fluid supply unit PS1 is controlled by the control device 50 to supply DIW at a first temperature to the nozzle 311 at a predetermined flow rate. Specifically, the first processing fluid supply unit PS1 includes a first supply pipe 31A, a first supply pump 33A, a first on / off valve 34A, a first flow regulating valve 35A, and a first flow sensor 36A. One end of the first supply pipe 31A is connected to a first storage tank 32A, and the other end of the first supply pipe 31A is connected to the mixing valve 38. The first supply pump 33A, the first on / off valve 34A, the first flow regulating valve 35A, and the first flow sensor 36A are installed on the first supply pipe 31A.

[0146] The second processing fluid supply unit PS2 is controlled by the control device 50 to supply DIW at a second temperature to the nozzle 311 at a predetermined flow rate. Specifically, the second processing fluid supply unit PS2 includes a second supply pipe 31B, a second supply pump 33B, a second on / off valve 34B, a second flow regulating valve 35B, and a second flow sensor 36B. One end of the second supply pipe 31B is connected to the second storage tank 32B, and the other end of the second supply pipe 31B is connected to the mixing valve 38. The second supply pump 33B, the second on / off valve 34B, the second flow regulating valve 35B, and the second flow sensor 36B are installed on the second supply pipe 31B.

[0147] The third processing fluid supply unit PS3 is controlled by the control device 50 to supply ammonia water to the nozzle 311 at a predetermined flow rate. Specifically, the third processing fluid supply unit PS3 includes a third supply pipe 31C, a third supply pump 33C, a third on / off valve 34C, a third flow regulating valve 35C, and a third flow sensor 36C. One end of the third supply pipe 31C is connected to the third storage tank 32C, and the other end of the third supply pipe 31C is connected to the mixing valve 38. The third supply pump 33C, the third on / off valve 34C, the third flow regulating valve 35C, and the third flow sensor 36C are installed on the third supply pipe 31C.

[0148] The fourth processing fluid supply unit PS4 is controlled by the control device 50 to supply hydrogen peroxide water to the nozzle 311 at a predetermined flow rate. Specifically, the fourth processing fluid supply unit PS4 includes a fourth supply pipe 31D, a fourth supply pump 33D, a fourth on / off valve 34D, a fourth flow regulating valve 35D, and a fourth flow sensor 36D. One end of the fourth supply pipe 31D is connected to the fourth storage tank 32D, and the other end of the fourth supply pipe 31D is connected to the mixing valve 38. The fourth supply pump 33D, the fourth on / off valve 34D, the fourth flow regulating valve 35D, and the fourth flow sensor 36D are installed on the fourth supply pipe 31D.

[0149] The mixing valve 38 is connected to the first supply pipe 31A, the second supply pipe 31B, the third supply pipe 31C, the fourth supply pipe 31D, and the supply pipe 31. The end of the supply pipe 31 opposite to the end connected to the mixing valve 38 is connected to the nozzle 311. The mixing valve 38 mixes the DIW at a first temperature supplied from the first supply pipe 31A, the DIW at a second temperature supplied from the second supply pipe 31B, the ammonia supplied from the third supply pipe 31C, and the hydrogen peroxide solution supplied from the fourth supply pipe 31D, and supplies the mixed treatment solution to the nozzle 311 via the supply pipe 31.

[0150] Figure 21 This is a block diagram illustrating one example of the function of the control device in the fourth variation. (See reference...) Figure 21 ,and Figure 8 The functional difference shown is that the flow condition acquisition unit 523 is changed to a flow condition acquisition unit 523A, and the processing fluid supply control unit 540 is changed to a processing fluid supply control unit 540A. Therefore... Figure 21 Other functions shown Figure 8 The functions shown are the same, so they will not be explained again here.

[0151] The flow condition acquisition unit 523A acquires the flow conditions included in the processing conditions read from the storage device 514, and outputs the acquired flow conditions to the processing liquid supply control unit 540A. The flow conditions include the flow rates of DIW at a first temperature, DIW at a second temperature, ammonia, and hydrogen peroxide at each of a plurality of locations on the substrate W. In the fourth variation, since the flow conditions include the flow rates of DIW at the first temperature and DIW at the second temperature, temperature conditions are also included.

[0152] Here, the flow rate conditions in the fourth variation will be explained. In the fourth variation, the mixing ratio of the processing liquid is preset to be constant. In the fourth variation, the mixing ratio of the processing liquid is ammonia:hydrogen peroxide:DIW = 2:3:1000. Since the mixing ratio of the processing liquid is constant, the flow rates of ammonia, hydrogen peroxide, and DIW are determined based on the flow rate of the processing liquid at a certain position in the radial direction of the substrate W. Since the ratio of DIW is larger than that of ammonia and hydrogen peroxide, the temperature of the processing liquid can be regarded as the temperature of DIW. For the temperature of the processing liquid at a certain position in the radial direction of the substrate W, the flow rates of DIW at a first temperature and DIW at a second temperature are determined based on the flow rate of DIW at that position. Since the temperature of the processing liquid is determined based on the flow rates of DIW at the first temperature and DIW at the second temperature, the flow rate conditions include the temperature conditions for determining the temperature of the processing liquid.

[0153] The processing fluid supply control unit 540A inputs the flow conditions from the flow condition acquisition unit 523A, and the ejection drive control unit 530 inputs the relative position of the nozzle 311 to the substrate W. The processing fluid supply control unit 540A controls the processing fluid supply unit PS according to the flow conditions and the relative position of the nozzle 311 to the substrate W.

[0154] Specifically, the processing liquid supply control unit 540A determines the flow rate of DIW at a first temperature, as specified by flow conditions, based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540A controls the first flow adjustment valve 35A of the first processing liquid supply unit PS1 to supply DIW at the first temperature to the nozzle 311 at the determined flow rate. The processing liquid supply control unit 540A determines the flow rate of DIW at a second temperature, as specified by flow conditions, based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540A controls the second flow adjustment valve 35B of the second processing liquid supply unit PS2 to supply DIW at the second temperature to the nozzle 311 at the determined flow rate. The processing liquid supply control unit 540A determines the flow rate of ammonia, as specified by flow conditions, based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540A controls the third flow adjustment valve 35C of the third processing liquid supply unit PS3 to supply ammonia to the nozzle 311 at the determined flow rate. The processing liquid supply control unit 540A determines the flow rate of hydrogen peroxide water specified by the flow conditions based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540A controls the fourth flow adjustment valve 35D of the fourth processing liquid supply unit PS4 to supply hydrogen peroxide water to the nozzle 311 at the determined flow rate.

[0155] Figure 22 This is a flowchart illustrating one example of the membrane treatment process in the fourth variation. Figure 22 The processing shown is the same as Figure 9 The difference in the processing shown is that steps S1, S4, and S5 are changed to steps S1D, S4A, and S5A, respectively. Because other processes are different... Figure 9 The processing is the same as described above, so it will not be repeated here.

[0156] CPU 511 acquires processing conditions (step S1D). Specifically, CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from storage device 514. From a plurality of processing conditions stored in storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information. The processing conditions acquired here include... Figure 18The movement conditions, flow conditions, and temperature conditions are shown. The flow conditions include the flow rates of the first temperature DIW, the second temperature DIW, ammonia, and hydrogen peroxide at each of a plurality of locations on the substrate W. Since the flow conditions include the flow rates of the first temperature DIW and the second temperature DIW at each of a plurality of locations on the substrate W, the temperature conditions also include the temperature conditions that define the temperature of the processing liquid at each of the plurality of locations on the substrate W.

[0157] In step S4A, CPU 511 determines the first to fourth flow rates. The first flow rate is the flow rate of the DIW at the first temperature. The second flow rate is the flow rate of the DIW at the second temperature. The third flow rate is the flow rate of ammonia. The fourth flow rate is the flow rate of hydrogen peroxide. Under the flow rate conditions included in the processing conditions obtained in step S1D, CPU 511 obtains the first to fourth flow rates specified for the position of nozzle 311 obtained in step S3. In step S5A, CPU 511 supplies the DIW at the first temperature with the first flow rate, supplies the DIW at the second temperature with the second flow rate, supplies ammonia with the third flow rate, and supplies hydrogen peroxide with the fourth flow rate, causing the processing to proceed to step S6.

[0158] In the fourth variation, the temperature of the treatment solution is adjusted by varying the flow rate of the DIW at the first temperature and the flow rate of the DIW at the second temperature. In the fourth variation, in addition to the effects of the third variation, the temperature of the treatment solution can also be easily adjusted.

[0159] (8) Fifth variation example

[0160] The substrate processing apparatus 300 in the first embodiment adjusts the moving speed of the nozzle 311 and the flow rate of the processing liquid supplied to the nozzle 311 for each of a plurality of different radial positions on the substrate W. In the fifth variation, the substrate processing apparatus 300 further adjusts the mixing ratio of the processing liquid for each of the plurality of different radial positions on the substrate W, compared to the substrate processing apparatus 300 in the first embodiment. Hereinafter, the differences between the substrate processing apparatus 300 in the fifth variation and the substrate processing apparatus 300 in the first embodiment will be mainly explained. In the fifth variation, the case where a sulfuric acid hydrogen peroxide mixture (SPM) is used as the processing liquid will be described as an example.

[0161] Figure 23 This diagram illustrates an example of the configuration of the processing liquid supply unit PS included in the substrate processing apparatus 300 in the fifth variation. (Refer to...) Figure 23In the fifth variation, the substrate processing apparatus 300 includes a fifth storage tank 32E and a sixth storage tank 32F. The fifth storage tank 32E stores a first processing solution. The first processing solution is sulfuric acid (H2SO4). The sixth storage tank 32F stores a second processing solution. The second processing solution is hydrogen peroxide (H2O2).

[0162] The processing fluid supply unit PS includes a fifth processing fluid supply unit PS5, a sixth processing fluid supply unit PS6, and a mixing valve 38A. The fifth processing fluid supply unit PS5 is controlled by the control device 50 to supply sulfuric acid to the nozzle 311 at a predetermined flow rate. Specifically, the fifth processing fluid supply unit PS5 includes a fifth supply pipe 31E, a fifth supply pump 33E, a fifth on / off valve 34E, a fifth flow regulating valve 35E, and a fifth flow sensor 36E. One end of the fifth supply pipe 31E is connected to a fifth storage tank 32E, and the other end of the fifth supply pipe 31E is connected to the mixing valve 38A. The fifth supply pump 33E, the fifth on / off valve 34E, the fifth flow regulating valve 35E, and the fifth flow sensor 36E are installed on the fifth supply pipe 31E.

[0163] The sixth processing fluid supply unit PS6 is controlled by the control device 50 to supply hydrogen peroxide water to the nozzle 311 at a predetermined flow rate. Specifically, the sixth processing fluid supply unit PS6 includes a sixth supply pipe 31F, a sixth supply pump 33F, a sixth on / off valve 34F, a sixth flow regulating valve 35F, and a sixth flow sensor 36F. One end of the sixth supply pipe 31F is connected to the sixth storage tank 32F, and the other end of the sixth supply pipe 31F is connected to the mixing valve 38A. The sixth supply pump 33F, the sixth on / off valve 34F, the sixth flow regulating valve 35F, and the sixth flow sensor 36F are installed on the sixth supply pipe 31F.

[0164] The mixing valve 38A is connected to the fifth supply pipe 31E, the sixth supply pipe 31F, and the supply pipe 31. The end of the supply pipe 31 opposite to the end connected to the mixing valve 38A is connected to the nozzle 311. The mixing valve 38A mixes the sulfuric acid supplied from the fifth supply pipe 31E with the hydrogen peroxide water supplied from the sixth supply pipe 31F, and supplies the mixed SPM to the nozzle 311 via the supply pipe 31.

[0165] Figure 24 This is a block diagram illustrating one example of the function of the control device 50 in the fifth variation. (See reference...) Figure 24 ,and Figure 8 The functional difference shown is that the flow condition acquisition unit 523 is changed to a flow condition acquisition unit 523B, and the processing fluid supply control unit 540 is changed to a processing fluid supply control unit 540B. Therefore... Figure 24 Other functions shown Figure 8 The functions shown are the same, so they will not be explained again here.

[0166] The flow rate condition acquisition unit 523B acquires the flow rate conditions included in the processing conditions read from the storage device 514, and outputs the acquired flow rate conditions to the processing liquid supply control unit 540B. The flow rate conditions include the flow rates of sulfuric acid and hydrogen peroxide water at each of a plurality of locations on the substrate W. In the fifth variation, the flow rate conditions include the flow rate of sulfuric acid and the flow rate of hydrogen peroxide water. The flow rate ratio is consistent with the mixing ratio of sulfuric acid and hydrogen peroxide. Therefore, the flow rate conditions represent the mixing ratio of SPM.

[0167] The processing fluid supply control unit 540B inputs the flow conditions from the flow condition acquisition unit 523B, and the ejection drive control unit 530 inputs the relative position of the nozzle 311 to the substrate W. The processing fluid supply control unit 540A controls the processing fluid supply unit PS according to the flow conditions and the relative position of the nozzle 311 to the substrate W.

[0168] Specifically, the processing liquid supply control unit 540B determines the flow rate of sulfuric acid, as specified by the flow conditions, based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540B controls the fifth flow adjustment valve 35E of the fifth processing liquid supply unit PS5 to supply sulfuric acid to the nozzle 311 at the determined flow rate. The processing liquid supply control unit 540B also determines the flow rate of hydrogen peroxide water, as specified by the flow conditions, based on the relative position of the nozzle 311 to the substrate W. The processing liquid supply control unit 540B controls the sixth flow adjustment valve 35F of the sixth processing liquid supply unit PS6 to supply hydrogen peroxide water to the nozzle 311 at the determined flow rate.

[0169] Figure 25 This is a diagram illustrating one example of the processing conditions in the fifth variation. (See reference...) Figure 25 This represents the processing conditions in six intervals p1 to p6. The upper section represents the SMP mixing ratio, the middle section represents the flow rate of the treatment fluid, and the lower section represents the moving speed of nozzle 311. The moving speed of nozzle 311 shown in the lower section and the flow rate of the treatment fluid shown in the middle section are related to... Figure 15 The same as shown.

[0170] Referring to the SPM mixing ratio shown above, during the period when nozzle 311 moves above each of intervals p1 and p6, the SPM mixing ratio is set to sulfuric acid: hydrogen peroxide water = 3:1. During the period when nozzle 311 is above intervals p2 to p5, the SPM mixing ratio is set to sulfuric acid: hydrogen peroxide water = 7:1.

[0171] Figure 26 This is a flowchart illustrating an example of the membrane treatment process in the fifth variation. Figure 26 The processing shown is the same as Figure 9The difference in the processing shown is that steps S1, S4, and S5 are changed to steps S1E, S4B, and S5B, respectively. Because other processes are... Figure 9 The processing is the same as described above, so it will not be repeated here.

[0172] CPU 511 acquires processing conditions (step S1E). Specifically, CPU 511 accepts processing procedure information input by the user into an input device such as a keyboard, and reads the processing conditions specific to the accepted processing procedure information from storage device 514. From the plurality of processing conditions stored in storage device 514, it reads the processing condition identified by the processing condition identification information contained in the processing procedure information. The processing conditions acquired here include... Figure 25 The movement conditions and flow conditions are shown. The flow conditions include the flow rates of sulfuric acid and hydrogen peroxide water at each of the plurality of locations on the substrate W. Since the flow rate ratio of sulfuric acid and hydrogen peroxide water is consistent with the mixing ratio of SPM, the mixing ratio conditions include a mixing ratio condition that specifies the mixing ratio of the treatment solution at each of the plurality of locations on the substrate W.

[0173] In step S4A, CPU 511 determines the first flow rate and the second flow rate. The first flow rate is the flow rate of sulfuric acid. The second flow rate is the flow rate of hydrogen peroxide solution. Under the flow rate conditions included in the processing conditions obtained in step S1E, CPU 511 obtains the first flow rate and the second flow rate specified for the position of nozzle 311 obtained in step S3. In step S5B, CPU 511 supplies sulfuric acid at the first flow rate and hydrogen peroxide solution at the second flow rate, causing the processing to proceed to step S6.

[0174] In the fifth variation, the flow rate and mixing ratio of the SPM are adjusted by varying the flow rates of sulfuric acid and hydrogen peroxide water. In the fifth variation, in addition to the effects of the third variation, the mixing ratio of the treatment solution can also be easily adjusted.

[0175] In the fifth variation, although the moving speed of the nozzle 311, the flow rate of the processing liquid, and the mixing ratio of the processing liquid are varied at each of the plurality of positions of the substrate W of the nozzle 311, the temperature of the processing liquid can also be varied, similar to the third and fourth variations.

[0176] <Second Implementation>

[0177] In the above embodiments, although a plurality of processing conditions are pre-stored in the storage device 514, the present invention is not limited thereto. For example, the control device 50 may also have a reasoning model for the reasoning processing conditions. A reasoning model is generated by having the learning model perform machine learning on the learning data.

[0178] The learning data used to enable the learning model to machine learn includes explanatory variables and objective variables. The explanatory variable is the processing amount, representing the difference in film thickness before and after the substrate processing apparatus 300 processes the film formed on the substrate W. The objective variable is data representing the processing conditions of the film processing performed by the substrate processing apparatus 300. The processing amount is... Figure 2 This represents the value of a single instance. The processing conditions are contained within... Figure 5 Indicates the move condition of an example, in Figure 6 Indicates the flow conditions and in Figure 11 This represents the rotation condition for an example.

[0179] Figure 27 This is a diagram representing an example of a learning model. (See reference...) Figure 27 A learning model is, for example, a neural network consisting of nodes with multiple layers. An inference model is generated by having the learning model perform machine learning on the learning data.

[0180] Each layer contains a plurality of nodes, indicated by white circles. Furthermore, although one intermediate layer is shown in the figure, the number of intermediate layers may be greater than this. Additionally, although five nodes are shown in the input layer, four nodes in the intermediate layers, and three nodes in the output layer, the total number of nodes is not limited to these. The output of a higher-level node is connected to the input of a lower-level node. Parameters include coefficients that weight the output of the higher-level node. Furthermore, the number of intermediate layers is one or more, and its number is not limited. The processing amount is represented by the difference E[n] in film thickness before and after processing at a plurality of radial positions P[n] (n is an integer greater than or equal to 1) on the substrate W.

[0181] A plurality of training data are pre-determined through experiments, etc., and then... Figure 27 The learning model shown performs machine learning on a plurality of learning data to generate an inference model. Here, for example, descriptive variables are input into a neural network, and the parameters of the neural network are determined such that the output of the neural network is equal to the target variable, i.e., the correct data. A neural network is generated by incorporating the parameters set by the learned neural network, which serves as the inference model. The inference model is an inference procedure incorporating the parameters set by the learned neural network.

[0182] Figure 28 This is a block diagram illustrating an example of the functional configuration of the control device 50 in the second embodiment. (Refer to...) Figure 28 ,and Figure 8 The functional differences shown are the addition of a film thickness acquisition unit 560, a processing volume determination unit 570, and an inference model 580. Other functions are similar to... Figure 8 The functions shown are the same, so they will not be explained again here.

[0183] The film thickness acquisition unit 560 acquires the film thickness of the film formed on the substrate W, which is the object to be coated in the substrate processing apparatus 300. Here, for example, the film thickness is measured by a film thickness sensor provided in the substrate processing apparatus 300. For example, a laser is irradiated toward the surface of the substrate W, the laser is received by a line sensor, and the film thickness is measured by the intensity of the received laser. Thus, the film thickness acquisition unit 560 acquires the film thickness of the film formed on the substrate W before the coating process is performed.

[0184] The processing quantity determination unit 570 determines the processing quantity of the coated film based on the film thickness obtained by the film thickness acquisition unit 560. Here, for example, the processing quantity is determined by the difference between the target film thickness and the film thickness obtained by the film thickness acquisition unit 560. The processing quantity determined by the processing quantity determination unit 570 is an example of a second processing quantity.

[0185] The processing quantity determination unit 570 inputs a second processing quantity to the inference model 580. Based on the input second processing quantity, the inference model 580 infers processing conditions and outputs the inferred processing conditions to the processing condition acquisition unit 520. The processing condition acquisition unit 520 acquires the processing conditions input from the inference model 580.

[0186] Figure 29 This is a flowchart illustrating the film treatment process in the second embodiment. Figure 29 The processing shown is the same as Figure 12 The difference in the coating treatment in the first variation shown is that step S1A is changed to steps S11 to S12. Because other treatments are different... Figure 12 The processing is the same as described above, so it will not be repeated here.

[0187] In step S11, CPU 511 obtains the film thickness. CPU 511 controls a sensor to measure the film thickness formed on the substrate W to which the film coating process is to be performed, thereby obtaining the film thickness. In the next step S12, CPU 511 determines the processing amount. CPU 511 determines the processing amount based on the film thickness obtained in step S11 and the target film thickness. The processing amount determined here is the second processing amount.

[0188] In the next step S13, CPU511 uses the inference model to deduce the processing conditions, causing the processing to proceed to step S2. CPU511 assigns the processing quantity determined in step S12 to the inference model and causes the inference model to perform inference. CPU511 obtains the processing conditions inferred by the inference model.

[0189] In step S4, the flow rate is determined based on the flow conditions included in the processing conditions deduced in step S13. Additionally, in step S7, the rotation speed is determined based on the rotation conditions included in the processing conditions deduced in step S13.

[0190] Since the substrate processing apparatus 300 in the second embodiment uses an inference model to infer processing conditions, appropriate processing conditions can be easily determined from complex combinations of movement conditions, flow conditions, and rotation conditions.

[0191] In the second embodiment, the target variable of the learning data used to enable the learning model to perform machine learning is included in Figure 5 Indicates the move condition of an example, in Figure 6 Indicates the flow conditions and in Figure 11 This represents a rotation condition for an example. In Figure 6 The flow rate condition for one example is that the flow rate in intervals p1 and p6 of the segmented region b1, where nozzle 311 is located at the periphery of substrate W, is less than the flow rate in other intervals p2 to p5. Additionally, in Figure 11 One example of the rotation condition is that the rotation speed of nozzle 311 in intervals p1 and p6 of the segmented region b1 at the periphery of substrate W is slower than the rotation speed in other intervals p2 to p5. Therefore, the probability of inferring the same flow rate and rotation condition from the inference model generated by machine learning on the learning data through the learning model is also relatively high. The probability of inferring a flow rate condition where the flow rate of the processing liquid is less when nozzle 311 is located in intervals p1 and p6 than when nozzle 311 is located in other intervals p2 to p5 is relatively high. Furthermore, the probability of inferring a rotation condition where the rotation speed of nozzle 311 is slower when it is located in intervals p1 and p6 than when it is located in other intervals p2 to p5 is relatively high.

[0192] <Examples of variations in the second embodiment>

[0193] In the second embodiment described above, a plurality of processing conditions are pre-stored in the storage device 514. In a variation of the second embodiment, the substrate processing apparatus 300 uses the inference model used in the second embodiment to generate a plurality of processing conditions, and stores the generated plurality of processing conditions in the storage device 514. In this case, since the plurality of processing conditions used to generate the inference model can be determined through experiments, etc., the storage device 514 can store more processing conditions than the number of experiments.

[0194] <Other Implementation Methods>

[0195] (i) In the first embodiment described above, an example was described in which specific processing conditions were read from the storage device 514, including processing condition identification information contained in the processing procedure information input by the user using the operation receiving unit 510. However, the present invention is not limited to this. As long as the processing conditions corresponding to the substrate W, which is the processing target of the substrate processing apparatus 300, can be obtained from the plurality of processing conditions stored in the storage device 514, it is acceptable to specify the processing conditions based on the batch number of the substrate W or the FOUP (Front Opening Unified Pod) number in which the substrate W is stored. Alternatively, the processing conditions can be specified based on the substrate identification information used to identify the substrate W.

[0196] (ii) In the first embodiment described above, although the flow rate condition is set to a condition where the flow rate in the region at a predetermined distance from the outer periphery of the substrate is less than the flow rate in other regions, the present invention is not limited to this. The flow rate condition in the region at a predetermined distance from the outer periphery of the substrate may be the same as or greater than the flow rate in other regions. The control device 50 controls the ejection drive control unit 530 to eject the processing liquid from the nozzle 311 according to the flow rate condition stored in the storage device 514. In this case, the etching amount at the periphery of the substrate W can be increased. When a thicker film is formed at the periphery, the uniformity of etching within the surface of the substrate W can be improved.

[0197] (iii) In the first embodiment described above, although an example of setting the moving speed of the nozzle 311 to zero at each of the operating ends EP1 and EP2 was given, the position where the moving speed of the nozzle 311 is set to zero is not limited to this. For example, the moving speed of the nozzle can be set to zero at any position on the trajectory of the nozzle 311. The period during which the moving speed is zero can be defined as any period. By setting the moving speed to zero at positions other than the operating ends EP1 and EP2, the uniformity of etching in the plane of the substrate W can be improved.

[0198] (iv) In the first variation, although the rotation condition is set such that the rotational speed in the region at a predetermined distance from the outer periphery of the substrate is less than the rotational speed in other regions, the present invention is not limited to this. The rotational speed in the region at a predetermined distance from the outer periphery of the substrate may also be greater than the rotational speed in other regions. In particular, when the processing liquid is blown to the substrate W through a spray nozzle that is an outlet for spraying the processing liquid, the liquid film of the processing liquid becomes thinner. Therefore, the energy of the water droplets is more easily transferred to the coating, and the frequency of the processing liquid colliding with the coating increases, thus increasing the amount of coating removed.

[0199] Furthermore, the rotation conditions can be configured to specify different rotation speeds for each of the multiple positions. In general, the ejection drive control unit 530 controls the rotary motor SM according to the rotation conditions stored in the storage device 514, causing the substrate W to rotate at the speed specified by the rotation conditions. In this case, the uniformity of etching within the surface of the substrate W can be improved.

[0200] (v) In the first variation, regarding the rotation condition, it is explained that the rotation speed is lower when the nozzle 311 is located in intervals p1 and p6 than when the nozzle 311 is located in other intervals p2 to p5. Furthermore, regarding the flow rate condition, it is explained that the flow rate of the processing liquid when the nozzle 311 is located in intervals p1 and p6 is less than the value when the nozzle 311 is located in other intervals p2 to p5. The intervals for reducing the substrate rotation speed and the intervals for reducing the processing liquid flow rate can also be different. For example, the rotation speed of the substrate W can be lower in the first annular region at a first distance from the outer periphery of the substrate W than the rotation speed in other regions, and the flow rate of the processing liquid can be lower in the second annular region at a second distance from the outer periphery of the substrate W than the flow rate in other regions. In this case, the uniformity of etching within the surface of the substrate W can be improved, and the scattering of the processing liquid at the periphery of the substrate W can be prevented.

[0201] (vi) In the second to fourth variations, the temperature condition is set such that the temperature of the processing liquid in the region at a predetermined distance from the outer periphery of the substrate is higher than the temperature of the processing liquid in other regions, but the present invention is not limited to this. The temperature condition may be the same as or lower than the temperature of the processing liquid in the region at a predetermined distance from the outer periphery of the substrate. In this case, the amount of etching at the periphery of the substrate W can be reduced. When a thinner film is formed at the periphery, the uniformity of etching within the surface of the substrate W can be improved.

[0202] In the fourth variation, although the temperature condition is set to the flow rate of the treatment liquid at the first temperature and the flow rate of the treatment liquid at the second temperature, it can also be set to the temperature itself. Based on the flow rate of the treatment liquid and the temperature, the first flow rate of the DIW at the first temperature, the second flow rate of the DIW at the second temperature, the third flow rate of ammonia, and the fourth flow rate of hydrogen peroxide are specified. In this case, the temperature condition can also be set to the temperature.

[0203] (vii) In the second embodiment, although it is shown that in the learning data for making the learning model perform machine learning, the flow rate condition, which is set as the objective variable, is set as the condition that the flow rate of the nozzle 311 in the intervals p1 and p6 of the segmented region b1 at the periphery of the substrate W is less than the flow rate in other intervals p2 to p5, and the rotation condition is set as the condition that the rotation speed of the nozzle 311 in the intervals p1 and p6 of the segmented region b1 at the periphery of the substrate W is slower than the rotation speed in other intervals p2 to p5, the present invention is not limited to this.

[0204] In the learning data used to enable the learning model to perform machine learning, the flow rate condition and rotation condition, which are set as the objective variables, can have arbitrary values. In addition, as the flow rate condition, it can be set that the flow rate of the nozzle 311 in the intervals p1 and p6 of the segmented region b1 at the periphery of the substrate W is greater than the flow rate in other intervals p2 to p5. Alternatively, the rotation condition can be set that the rotation speed of the nozzle 311 in the intervals p1 and p6 of the segmented region b1 at the periphery of the substrate W is faster than the rotation speed in other intervals p2 to p5.

[0205] In the learning data used to enable the learning model to perform machine learning, the objective variable may include at least one of the following: rotation condition, temperature condition, and mixing ratio condition, in addition to movement condition and flow condition.

[0206] <Correspondence between the constituent elements of the technical solution and the various parts of the implementation method>

[0207] The rotary chuck SC and rotary motor SM are examples of rotary drive units; nozzle 311 is an example of a spray unit; processing fluid supply unit PS is an example of a processing fluid supply unit; nozzle motor 303 is an example of a spray drive unit; control device 50 is an example of a control unit; segmented area b1 is an example of a peripheral area; and reasoning model 580 is an example of a reasoning model. Supply piping 31 is an example of a supply piping; and heater 37 is an example of a heating unit. In the fourth variation example, the first temperature DIW is an example of the first processing fluid, the second temperature DIW is an example of the second processing fluid, the first processing fluid supply unit PS1 is an example of the first processing fluid supply unit, the second processing fluid supply unit PS2 is an example of the second processing fluid supply unit, the first flow regulating valve 35A is an example of the first processing fluid flow regulating unit, the second flow regulating valve 35B is an example of the second processing fluid flow regulating unit, and the mixing valve 38 is an example of a mixing unit. In the fifth variation example, SPM is an example of a treatment liquid, sulfuric acid is an example of a first treatment liquid, hydrogen peroxide water is an example of a second treatment liquid, the fifth treatment liquid supply unit PS5 is an example of a first treatment liquid supply unit, the sixth treatment liquid supply unit PS6 is an example of a second treatment liquid supply unit, the fifth flow regulating valve 35E is an example of a first treatment liquid flow regulating unit, the sixth flow regulating valve 35F is an example of a second treatment liquid flow regulating unit, and the mixing valve 38A is an example of a mixing unit.

[0208] <Summary of Implementation Methods>

[0209] (Item 1) A substrate processing apparatus according to one aspect of the present invention processes the coating by supplying a processing liquid to a substrate on which the coating is formed, wherein the apparatus comprises: A rotation drive unit that holds the substrate and rotates the substrate. The ejection section ejects the treatment liquid; The processing fluid supply unit supplies processing fluid to the aforementioned ejection unit; An ejection drive unit moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation drive unit; and The control unit controls the above-mentioned processing liquid supply unit and the above-mentioned ejection drive unit according to the processing conditions. The above processing conditions include: The movement conditions, for each of the aforementioned plurality of positions, specify the movement speed of the ejector portion; and The flow rate conditions specify the flow rate of the treatment fluid supplied to the ejection section for each of the aforementioned plurality of locations.

[0210] According to the substrate processing apparatus described in claim 1, the moving speed of the ejector section and the flow rate of the processing liquid supplied to the ejector section are adjusted for each of a plurality of different radial positions on the substrate. Therefore, the film formed on the substrate can be processed effectively. Thus, a substrate processing apparatus that reduces the consumption of processing liquid for processing the film formed on the substrate can be provided.

[0211] (Item 2) may also be a substrate processing apparatus as described in Item 1, wherein, The flow rate condition is set such that the flow rate of the processing liquid in the peripheral region where the position of the ejector is within a predetermined distance from the periphery of the substrate is specified as a value smaller than the flow rate of the processing liquid in the region where the position of the ejector is outside the peripheral region.

[0212] According to the substrate processing apparatus described in item 2, since the flow rate of the processing liquid ejected from the ejection section is reduced when the ejection section is located in the peripheral region, the processing liquid supplied to the substrate can be prevented from scattering to the outside of the substrate.

[0213] (Item 2-1) may also be a substrate processing apparatus as described in Item 2, wherein, The range of movement of the ejection drive unit that moves the ejection unit is determined based on the flow rate of the processing fluid supplied by the processing fluid supply unit.

[0214] According to the substrate processing apparatus described in item 2-1, the movement range of the ejection drive unit is determined by the flow rate of the processing liquid. In this case, when the processing liquid ejected from the ejection unit collides with the substrate, the processing liquid diffuses from the collision point to the periphery. The smaller the flow rate, the smaller the amount of processing liquid diffusion. When the amount of processing liquid diffusion is small, the collision point between the processing liquid and the substrate can be made closer to the outer side of the substrate. Therefore, coating processing can be performed effectively.

[0215] (Item 2-2) may also be a substrate processing apparatus as described in Item 2, wherein, The aforementioned movement conditions include any of the aforementioned plurality of positions where the movement speed of the ejector portion is set to zero for a predetermined time.

[0216] According to the substrate processing apparatus described in item 2-2, since the movement of the ejection section is stopped at any of the plurality of positions, the supply amount of processing liquid at the position where the ejection section stops can be increased. Therefore, the processing amount of the coating process can be locally varied.

[0217] (Items 2-3) may also be, as described in Item 2, a substrate processing apparatus, wherein, The aforementioned movement conditions include values ​​that cause the movement direction of the ejector to reverse at least once.

[0218] According to the substrate processing apparatus described in items 2-3, since the direction of movement of the ejection section is reversed, the processing liquid can be supplied to multiple positions multiple times.

[0219] (Items 2-4) may also be, as described in item 2, a substrate processing apparatus, wherein, The above processing conditions also include: rotational conditions specifying the rotational speed for rotating the substrate at each of the plurality of positions; and The control unit controls the rotation drive unit according to the rotation conditions described above.

[0220] According to the substrate processing apparatus described in items 2-4, the substrate is rotated at different speeds in a plurality of positions. This allows for easy adjustment of the amount of processing liquid supplied per unit area at different positions in the radial direction of the substrate.

[0221] (Items 2-5) may also be, as described in items 2-4, a substrate processing apparatus, wherein, The rotation condition is set such that the rotation speed of the substrate when the nozzle is located in the peripheral area is specified to be faster than the rotation speed of the substrate when the nozzle is located in a region other than the peripheral area.

[0222] According to the substrate processing apparatus described in items 2-5, since the rotation speed of the substrate decreases when the ejection section is located in the peripheral region, the processing liquid supplied to the substrate can be prevented from scattering to the outside of the substrate.

[0223] (Item 3) may also be a substrate processing apparatus as described in Item 1, wherein, The above processing conditions also include: rotation conditions, which specify a rotational speed for each of the plurality of positions to rotate the substrate.

[0224] According to the substrate processing apparatus described in item 3, in addition to adjusting the moving speed of the ejector section and the flow rate of the processing liquid supplied by the ejector section for each of a plurality of positions, the rotational speed of the substrate can also be adjusted. Therefore, the coating formed on the substrate can be processed more effectively.

[0225] (Item 4) The substrate processing apparatus as described in any one of items 1 to 3, wherein, The above processing conditions further include: temperature conditions related to the temperature of the processing liquid ejected from the ejection portion onto the substrate at each of the plurality of locations; and The control unit controls the processing liquid supply unit and adjusts the temperature of the processing liquid sprayed from the ejection unit onto the substrate.

[0226] According to the substrate processing apparatus described in item 4, the temperature of the processing liquid is adjusted for each of a plurality of different positions on the substrate in the radial direction. The temperature of the processing liquid has a predetermined relationship with the processing volume. Therefore, the film formed on the substrate can be processed more effectively.

[0227] (Item 5) The substrate processing apparatus as described in Item 4, wherein, The aforementioned processing fluid supply unit includes: a supply pipe that supplies the processing fluid to the aforementioned spraying unit; and a heating unit disposed on the aforementioned supply pipe that heats the processing fluid.

[0228] According to the substrate processing apparatus described in item 5, a heating unit for heating the processing liquid is provided in the supply pipe for supplying the processing liquid to the ejection section. Therefore, the temperature of the processing liquid ejected from the ejection section can be easily adjusted.

[0229] (Item 6) The substrate processing apparatus as described in any one of items 1 to 3, wherein, The above processing conditions further include: mixing ratio conditions associated with the mixing ratio of the processing liquid ejected from the ejection portion to the substrate for each of the plurality of locations; and The control unit controls the processing liquid supply unit and adjusts the mixing ratio of the processing liquid sprayed from the ejection unit to the substrate.

[0230] According to the substrate processing apparatus described in item 6, the mixing ratio of the processing liquid is adjusted for each of a plurality of different positions on the substrate in the radial direction. The mixing ratio of the processing liquid has a predetermined relationship with the processing volume. Therefore, the film formed on the substrate can be processed more effectively.

[0231] (Item 7) The substrate processing apparatus as described in Item 6, wherein, The above-mentioned processing liquid supply unit includes: a first processing liquid supply unit that supplies a first processing liquid to the above-mentioned ejection unit; The second processing liquid supply unit supplies the second processing liquid to the above-mentioned ejection unit; The first processing fluid flow rate adjustment unit adjusts the flow rate of the first processing fluid. The second processing fluid flow rate adjustment unit adjusts the flow rate of the second processing fluid; and The mixing unit mixes the first treatment liquid and the second treatment liquid.

[0232] According to the substrate processing apparatus described in item 7, a first processing liquid is supplied to the ejection section, a second processing liquid is supplied to the ejection section, and the first and second processing liquids are mixed. Therefore, the processing liquid resulting from the mixture of the first and second processing liquids is ejected from the ejection section. The flow rate of the first and second processing liquids is adjusted. When the first and second processing liquids are used as processing liquids with different temperatures or concentrations, the temperature or concentration of the processing liquids can be easily adjusted. Furthermore, when the processing liquid is a liquid consisting of a mixture of the first and second processing liquids, the temperature of the processing liquid or the concentration of the first processing liquid in the processing liquid can be easily adjusted.

[0233] (Item 8) The substrate processing apparatus as described in Item 7, wherein, The first treatment solution and the second treatment solution mentioned above are the same liquid at different temperatures.

[0234] According to the substrate processing apparatus described in item 8, since the temperatures of the first processing liquid and the second processing liquid are different, the temperature of the processing liquid can be easily adjusted.

[0235] (Item 9) The substrate processing apparatus as described in Item 7, wherein, The first treatment solution mentioned above is a different liquid from the second treatment solution mentioned above.

[0236] According to the substrate processing apparatus described in item 9, since the first processing liquid and the second processing liquid are different liquids, the concentration of the first processing liquid in the processing liquid can be easily adjusted.

[0237] (Item 10) The substrate processing apparatus as described in any one of items 1 to 9, further comprising: The processing condition acquisition unit acquires the aforementioned processing conditions determined using the reasoning model that uses the reasoning processing conditions; and The above-mentioned reasoning model is generated by performing machine learning on the learning data. In the learning data, the processing conditions of the substrate processing apparatus for processing the film are set as the objective variable, and the first processing quantity, which represents the difference in film thickness before and after processing the film formed on the substrate of the processed film by the substrate processing apparatus, is set as the explanatory variable.

[0238] According to the substrate processing apparatus described in item 10, since a reasoning model is used, the processing conditions can be easily determined.

[0239] (Item 11) Alternatively, it may be a substrate processing apparatus as described in Item 10, wherein it further comprises: The processing quantity determination unit determines the second processing quantity of the coating film based on the film thickness of the coating film formed on the substrate before the coating film is processed; and The processing condition acquisition unit assigns the second processing quantity to the inference model and acquires the processing conditions inferred by the inference model.

[0240] According to the substrate processing apparatus described in item 11, the processing amount determination unit determines the second processing amount, and the processing conditions for determining the processing amount of the coating to be processed are inferred by a reasoning model. Therefore, appropriate processing conditions can be obtained based on the film thickness of the coating formed on the substrate before processing.

[0241] (Item 12) Another type of substrate processing apparatus of the present invention includes: A rotation drive unit that holds the substrate and rotates the substrate. The ejection section ejects the treatment liquid; The treatment fluid supply unit supplies treatment fluid to the aforementioned ejection unit; and The ejection drive unit moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation drive unit; and The flow rate of the processing liquid when the above-mentioned processing liquid supply unit positions the above-mentioned ejection part within a peripheral region at a predetermined distance from the periphery of the above-mentioned substrate is less than the flow rate of the processing liquid when the above-mentioned ejection part is located outside the above-mentioned peripheral region.

[0242] According to the substrate processing apparatus described in item 12, since the flow rate of the processing liquid supplied to the peripheral region is less than that to other regions, the area of ​​the processing liquid that spreads on the substrate after being supplied to the substrate in the peripheral region can be relatively small. This suppresses the outward dispersion of the processing liquid supplied to the peripheral region due to the rotation of the substrate. As a result, a substrate processing apparatus that reduces the consumption of processing liquid can be provided.

[0243] (Item 13) Alternatively, it may be a substrate processing apparatus as described in Item 12, wherein it further comprises: The range of movement of the ejection drive unit that moves the ejection unit is determined based on the flow rate of the processing fluid supplied by the processing fluid supply unit.

[0244] According to the substrate processing apparatus described in item 13, the movement range of the ejection drive unit is determined by the flow rate of the processing liquid. In this case, when the processing liquid ejected from the ejection unit collides with the substrate, the processing liquid diffuses from the collision point to the periphery. The smaller the flow rate, the smaller the amount of processing liquid diffusion. When the amount of processing liquid diffusion is small, the collision point between the processing liquid and the substrate can be made closer to the outer side of the substrate. Therefore, coating processing can be performed effectively.

[0245] (Item 14) The substrate processing apparatus as described in Item 12 or Item 13, wherein, At any of the aforementioned plurality of positions, the ejection drive unit sets the moving speed of the ejection unit to zero for a predetermined time.

[0246] According to the substrate processing apparatus described in item 14, since the movement of the ejector section is stopped at any of the plurality of positions, the supply amount of processing liquid at the position where the ejector section stops can be increased. Therefore, the processing amount of the coating process can be locally varied.

[0247] (Item 15) may also be a substrate processing apparatus as described in any one of items 12 to 14, wherein, The aforementioned ejection drive unit reverses the direction of movement of the ejection unit at least once.

[0248] According to the substrate processing apparatus described in item 15, since the direction of movement of the ejection section is reversed, the processing liquid can be supplied to a plurality of positions multiple times.

[0249] (Item 16) The substrate processing apparatus as described in any one of items 12 to 15, wherein, The aforementioned rotation drive unit causes the substrate to rotate at different rotational speeds for each of the aforementioned plurality of positions.

[0250] According to the substrate processing apparatus described in item 16, the substrate is rotated at different speeds in a plurality of positions. This allows for easy adjustment of the amount of processing liquid supplied per unit area at different positions in the radial direction of the substrate.

[0251] (Item 17) may also be a substrate processing apparatus as described in any one of items 12 to 16, wherein, The rotational speed of the substrate when the ejector is located in the peripheral region is slower than the rotational speed of the substrate when the ejector is located outside the peripheral region.

[0252] According to the substrate processing apparatus described in item 17, since the rotation speed of the substrate decreases when the ejection section is located in the peripheral region, the processing liquid supplied to the substrate can be prevented from scattering to the outside of the substrate.

[0253] (Item 18) Another substrate processing method of the present invention is performed by a substrate processing apparatus that processes the aforementioned coating by supplying a processing liquid to a substrate on which the coating has been formed; wherein, The aforementioned substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The above substrate processing method includes: The processing fluid supply step involves supplying processing fluid to the ejector portion according to movement conditions that specify the movement speed of the ejector portion for each of the plurality of positions; and In the ejection driving step, the ejection section is moved to a plurality of different radial positions on the substrate held by the rotary drive section, according to the flow conditions of the processing liquid supplied to the ejection section for each of the plurality of positions.

[0254] According to the substrate processing method described in item 18, a substrate processing method can be provided that reduces the consumption of processing liquid used to process the film formed on the substrate.

[0255] (Item 19) Another substrate processing method of the present invention is performed by a substrate processing apparatus that processes the aforementioned coating by supplying a processing liquid to a substrate on which the coating has been formed; wherein, The aforementioned substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The above-mentioned substrate processing method includes: The process fluid supply step involves supplying process fluid to the aforementioned spray section; and The ejection driving step moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation driving portion. The above-mentioned processing liquid supply step includes: the flow rate of the processing liquid when the above-mentioned ejection part is located in the peripheral region within a predetermined distance from the periphery of the above-mentioned substrate is less than the flow rate of the processing liquid when the above-mentioned ejection part is located in the region outside the above-mentioned peripheral region.

[0256] According to the substrate processing method described in item 19, a substrate processing method can be provided that reduces the consumption of processing liquid used to process the film formed on the substrate.

[0257] (Item 20) In another aspect of the present invention, the substrate processing procedure is executed by a computer that controls a substrate processing apparatus for processing the aforementioned coating by supplying a processing liquid to a substrate on which the coating has been formed; wherein, The aforementioned substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The aforementioned substrate processing procedure causes the aforementioned computer to execute: The processing fluid supply step involves supplying processing fluid to the ejector portion according to movement conditions that specify the movement speed of the ejector portion for each of the plurality of positions; and In the ejection driving step, the ejection section is moved to a plurality of different radial positions on the substrate held by the rotary drive section, according to the flow conditions of the processing liquid supplied to the ejection section for each of the plurality of positions.

[0258] According to the substrate processing method described in item 20, a substrate processing procedure can be provided that reduces the consumption of processing liquid for processing a film formed on a substrate.

[0259] (Item 21) In another aspect of the present invention, the substrate processing procedure is executed by a computer that controls a substrate processing apparatus for processing the aforementioned coating by supplying a processing liquid to a substrate on which the coating has been formed; wherein, The aforementioned substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the processing liquid; the above-mentioned substrate processing procedure is executed by the above-mentioned computer: The process fluid supply step involves supplying process fluid to the aforementioned spray section; and The ejection driving step moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation driving portion. The above-mentioned processing liquid supply step includes: the flow rate of the processing liquid when the above-mentioned ejection part is located in the peripheral region within a predetermined distance from the periphery of the above-mentioned substrate is less than the flow rate of the processing liquid when the above-mentioned ejection part is located in the region outside the above-mentioned peripheral region.

[0260] According to the substrate processing method described in item 21, a substrate processing procedure can be provided that reduces the consumption of processing liquid used to process the film formed on the substrate.

Claims

1. A substrate processing apparatus, wherein a coating is processed by supplying a processing liquid to a substrate on which a coating has been formed, wherein, have: A rotation drive unit that holds the substrate and rotates the substrate. The ejection section ejects the treatment liquid; The processing fluid supply unit supplies processing fluid to the aforementioned ejection unit; An ejection drive unit moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation drive unit; and The control unit controls the above-mentioned processing liquid supply unit and the above-mentioned ejection drive unit according to the processing conditions. The above processing conditions include: The movement conditions, for each of the aforementioned plurality of positions, specify the movement speed of the ejector portion; and The flow rate conditions specify the flow rate of the treatment fluid supplied to the ejection section for each of the aforementioned plurality of locations.

2. The substrate processing apparatus as claimed in claim 1, wherein, The flow rate condition is set such that the flow rate of the processing liquid in the peripheral region where the position of the ejector is within a predetermined distance from the periphery of the substrate is specified as a value smaller than the flow rate of the processing liquid in the region where the position of the ejector is outside the peripheral region.

3. The substrate processing apparatus as claimed in claim 1, wherein, The above processing conditions also include: rotation conditions that specify the rotational speed for rotating the substrate for each of the plurality of positions.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The above processing conditions also include: temperature conditions related to the temperature of the processing liquid ejected from the ejection portion to the substrate for each of the plurality of locations. The control unit controls the processing liquid supply unit and adjusts the temperature of the processing liquid sprayed from the ejection unit onto the substrate.

5. The substrate processing apparatus as claimed in claim 4, wherein, The aforementioned processing fluid supply unit includes: a supply pipe that supplies the processing fluid to the aforementioned spraying unit; and a heating unit disposed on the aforementioned supply pipe that heats the processing fluid.

6. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The above processing conditions also include: mixing ratio conditions related to the mixing ratio of the processing liquid ejected from the ejection portion to the substrate for each of the plurality of locations; The control unit controls the processing liquid supply unit and adjusts the mixing ratio of the processing liquid sprayed from the ejection unit to the substrate.

7. The substrate processing apparatus as claimed in claim 6, wherein, The above-mentioned processing liquid supply unit includes: a first processing liquid supply unit that supplies a first processing liquid to the above-mentioned ejection unit; The second processing liquid supply unit supplies the second processing liquid to the above-mentioned ejection unit; The first processing fluid flow rate adjustment unit adjusts the flow rate of the first processing fluid. The second processing fluid flow rate adjustment unit adjusts the flow rate of the second processing fluid; and The mixing unit mixes the first treatment liquid and the second treatment liquid.

8. The substrate processing apparatus as claimed in claim 7, wherein, The first treatment solution and the second treatment solution mentioned above are the same liquid at different temperatures.

9. The substrate processing apparatus as claimed in claim 7, wherein, The first treatment solution mentioned above is a different liquid from the second treatment solution mentioned above.

10. The substrate processing apparatus according to any one of claims 1 to 9, wherein, It also includes: a processing condition acquisition unit, which acquires the processing conditions determined using a reasoning model that infers the aforementioned processing conditions; and The above-mentioned reasoning model is generated by performing machine learning on the learning data. In the learning data, the processing conditions of the substrate processing apparatus for processing the film are set as the objective variable, and the first processing quantity, which represents the difference in film thickness before and after processing the film formed on the substrate of the processed film by the substrate processing apparatus, is set as the explanatory variable.

11. The substrate processing apparatus as claimed in claim 10, wherein, It also includes: a processing amount determination unit, which determines a second processing amount for processing the coating film based on the film thickness of the coating film formed on the substrate before processing the coating film; and The processing condition acquisition unit assigns the second processing quantity to the inference model and acquires the processing conditions inferred by the inference model.

12. A substrate processing apparatus, wherein, have: A rotation drive unit that holds the substrate and rotates the substrate. The ejection section ejects the treatment liquid; The treatment fluid supply unit supplies treatment fluid to the aforementioned ejection unit; and The ejection drive unit moves the ejection part to a plurality of different radial positions on the substrate held by the rotation drive unit. The flow rate of the processing liquid when the above-mentioned processing liquid supply unit positions the above-mentioned ejection part within a peripheral region at a predetermined distance from the periphery of the above-mentioned substrate is less than the flow rate of the processing liquid when the above-mentioned ejection part is located outside the above-mentioned peripheral region.

13. The substrate processing apparatus as claimed in claim 12, wherein, The range of movement of the ejection drive unit that moves the ejection unit is determined based on the flow rate of the processing fluid supplied by the processing fluid supply unit.

14. The substrate processing apparatus as claimed in claim 12 or 13, wherein, In any of the aforementioned plurality of positions, the ejection drive unit sets the moving speed of the ejection unit to zero for a predetermined time.

15. The substrate processing apparatus according to any one of claims 12 to 14, wherein, The aforementioned ejection drive unit reverses the direction of movement of the ejection unit at least once.

16. The substrate processing apparatus according to any one of claims 12 to 15, wherein, The aforementioned rotation drive unit causes the substrate to rotate at different rotational speeds for each of the aforementioned plurality of positions.

17. The substrate processing apparatus according to any one of claims 12 to 16, wherein, The rotational speed of the substrate when the ejector portion is located in the peripheral region by the aforementioned rotational drive is slower than the rotational speed of the substrate when the ejector portion is located in a region other than the peripheral region.

18. A substrate processing method, performed by a substrate processing apparatus that processes a film by supplying a processing liquid to a substrate on which a film has been formed, wherein, The aforementioned substrate processing apparatus includes: A rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The above substrate processing method includes: The processing fluid supply step involves supplying processing fluid to the ejector portion according to movement conditions that specify the movement speed of the ejector portion for each of the plurality of positions; and In the ejection driving step, the ejection section is moved to a plurality of different radial positions on the substrate held by the rotary drive section, according to the flow conditions of the processing liquid supplied to the ejection section for each of the plurality of positions.

19. A substrate processing method, wherein the substrate processing apparatus processes the coating by supplying a processing liquid to a substrate on which a coating has been formed, wherein the coating is processed. The aforementioned substrate processing apparatus includes: a rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The above-mentioned substrate processing method includes: The process fluid supply step involves supplying process fluid to the aforementioned spray section; and The ejection driving step moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation driving portion. The above-mentioned processing liquid supply step includes: the flow rate of the processing liquid when the ejector portion is located in the peripheral region within a predetermined distance from the periphery of the substrate is less than the flow rate of the processing liquid when the ejector portion is located in the region outside the peripheral region.

20. A substrate processing procedure, executed by a computer that controls a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which a film has been formed, wherein, The aforementioned substrate processing apparatus includes: A rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The aforementioned substrate processing procedure causes the aforementioned computer to execute: The processing fluid supply step involves supplying processing fluid to the ejector portion according to movement conditions that specify the movement speed of the ejector portion for each of the plurality of positions; and In the ejection driving step, the ejection section is moved to a plurality of different radial positions on the substrate held by the rotary drive section, according to the flow conditions of the processing liquid supplied to the ejection section for each of the plurality of positions.

21. A substrate processing procedure, executed by a computer that controls a substrate processing apparatus for processing a film by supplying a processing liquid to a substrate on which a film has been formed, wherein, The aforementioned substrate processing apparatus includes: A rotation drive unit that holds the substrate and rotates the substrate; and The ejection section ejects the treatment liquid; The aforementioned substrate processing procedure causes the aforementioned computer to execute: The process fluid supply step involves supplying process fluid to the aforementioned spray section; and The ejection driving step moves the ejection portion to a plurality of different radial positions on the substrate held by the rotation driving portion. The above-mentioned processing liquid supply step includes: the flow rate of the processing liquid when the ejector portion is located in the peripheral region within a predetermined distance from the periphery of the substrate is less than the flow rate of the processing liquid when the ejector portion is located in the region outside the peripheral region.

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