Control method and system based on 180 type crystal furnace crystal growth
By using a control method based on a 180-type crystal furnace, real-time, dynamic, and intelligent coordinated adjustment of parameters during the monocrystalline silicon growth process was achieved. This solved the problem of inaccuracy in traditional control systems, improved the stability and efficiency of crystal growth, and enhanced the quality and yield of monocrystalline silicon.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICHUAN GOKIN SOLAR TECHNOLOGY CO LTD
- Filing Date
- 2026-03-03
- Publication Date
- 2026-05-15
AI Technical Summary
Existing technologies lack real-time, dynamic, and intelligent coordinated adjustment of parameters during monocrystalline silicon growth, resulting in an imprecise control system that affects the stability and efficiency of crystal growth.
A control method based on a 180-type crystal furnace is adopted. By collecting key influencing factors and control index data in real time during the growth stage, and combining the coupling relationship between multiple factors, coordinated equipment control commands are generated to achieve real-time, dynamic, and intelligent collaborative adjustment of parameters.
It significantly improves the stability and efficiency of crystal growth, increases single crystal quality and yield, shortens the growth cycle, and reduces energy consumption and argon consumption.
Smart Images
Figure CN122039201A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a control method and system for crystal growth based on a 180-type crystal furnace. Background Technology
[0002] Currently, the industry commonly uses a 160-type (1600mm diameter furnace) single crystal furnace based on the traditional Czochralski Method (CZ method) for single crystal silicon growth. The basic process is as follows: High-purity polycrystalline silicon is loaded into a quartz crucible, which is placed inside a graphite heater. The silicon is heated to above 1420°C and melted into a silicon melt under an inert gas (usually argon) protective environment by the main heating system. After the melt stabilizes, a seed crystal, pre-fixed on a seed crystal axis, is lowered until it contacts the melt surface. By precisely controlling the seed crystal's pulling speed, rotation speed, and the crucible's lifting and rotation speeds, while simultaneously precisely adjusting the heater power and argon flow rate, the melt begins to crystallize at the lower end of the seed crystal and continues to grow as the seed crystal is gradually pulled up, ultimately forming a single crystal silicon rod with a certain diameter and length.
[0003] However, throughout the growth process, the control system mainly relies on independent PID (proportional-integral-derivative) control of several key parameters (such as pulling speed, temperature, crucible rotation, and crystal rotation). Operators typically set the process formula based on experience, and the system controls according to preset curves, lacking real-time, dynamic, and intelligent coordination between parameters. Summary of the Invention
[0004] In view of this, the purpose of this application is to provide a control method and system for crystal growth based on a 180-type crystal furnace, which can realize real-time, dynamic, and intelligent coordinated adjustment between parameters, thereby ensuring stable crystal growth.
[0005] This application provides a control method for crystal growth based on a 180-type crystal furnace, the control method comprising: Determine the growth stage of the target crystal in the 180-type crystal furnace; Based on the determined crystal growth stage, obtain the current values of multiple influencing factors related to crystal growth at the growth stage, and obtain the current value of at least one control index corresponding to the growth stage. For each influencing factor, the parameter adjustment amount is determined based on the current value and the standard value of the influencing factor. For each control indicator obtained, the parameter adjustment amount is determined based on the current value and the standard value of the control indicator. Based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and combined with the coupling relationship between the influencing factors, a set of equipment control instructions for controlling the stable growth of the target crystal is generated. For each control instruction in the device control instruction set, control of the corresponding target device is performed according to the control instruction.
[0006] Optionally, the step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the melting stage, obtain the current power of the main heater, the current power of the auxiliary heater, the current pressure inside the furnace, the current argon flow rate, the current crucible rotation speed, and the current temperature of the melt.
[0007] Optionally, the step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the seed crystal stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current solid-liquid interface temperature.
[0008] Optionally, the step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the shoulder formation stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal diameter.
[0009] Optionally, the step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the constant diameter stage, obtain the current rotation speed of the seed crystal, the current pulling speed of the seed crystal, the current power of the main heater, the current power of the auxiliary heater, the current pressure in the furnace, the current flow rate of argon gas, and the current oxygen content in the furnace. When the determined crystal growth stage is the final stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal cooling rate.
[0010] Optionally, the step of generating a set of equipment control instructions for controlling the stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and in combination with the coupling relationship between the influencing factors, includes: For each influencing factor, based on the predetermined coupling relationship between the influencing factors, at least one control model is determined to adjust the influencing factor, and based on the parameter adjustment amount of the influencing factor, the first equipment control command is determined from the determined control model. For each control indicator, at least one control model is determined according to the type of the control indicator, and a second equipment control command is determined based on the determined control model according to the parameter adjustment amount of the control indicator. A set of device control instructions is obtained based on the first device control instruction and the second device control instruction.
[0011] Optionally, the control model includes a multi-physics coupled digital control model, a multi-parameter coupled intelligent control model, and a directional exhaust and airflow coordinated control model; the multi-physics coupled digital control model includes a thermal field control sub-model, a melt flow field control sub-model, a gas flow field control sub-model, and a phase change field control sub-model; the directional exhaust and airflow coordinated control model includes a multi-path directional exhaust control sub-model, an oxygen concentration distribution prediction sub-model, and a dynamic exhaust valve control sub-model.
[0012] This application also provides a control system for crystal growth based on a 180-type crystal furnace, the control system comprising: The first determining module is used to determine the growth stage of the target crystal in the 180-type crystal furnace; A model is obtained to acquire information related to crystal growth at the determined crystal growth stage.
[0013] This application also provides an electronic device, including: a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor communicates with the memory via the bus. When the machine-readable instructions are executed by the processor, the steps of the control method described above are performed.
[0014] This application also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, performs the steps of the control method described above.
[0015] This application provides a control method and system for crystal growth based on a 180-type crystal furnace. The control method includes: determining the growth stage of a target crystal in the 180-type crystal furnace; obtaining the current values of multiple influencing factors related to crystal growth at the determined growth stage, and obtaining the current value of at least one control index corresponding to the growth stage; for each influencing factor, determining the parameter adjustment amount of the influencing factor based on the current value and a standard value; for each obtained control index, determining the parameter adjustment amount of the control index based on the current value and a standard value; generating a set of equipment control instructions for stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indexes corresponding to the current growth stage, and considering the coupling relationship between the influencing factors; and performing corresponding target equipment control according to each control instruction in the set of equipment control instructions.
[0016] In this way, this application automatically calculates the adjustment amount of each parameter by collecting key influencing factors and control index data of the growth stage in real time and dynamically comparing them with standard values. Furthermore, it considers the coupling relationship between multiple factors, thereby generating a coordinated and consistent set of equipment control commands, which can significantly improve the overall control and accuracy. Therefore, this method, through systematic stage identification and multi-parameter coordinated control, achieves refined and intelligent management of the crystal growth process, playing an important role in improving single crystal quality and yield.
[0017] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 A flowchart illustrating a control method for crystal growth based on a 180-type crystal furnace, provided as an embodiment of this application; Figure 2 A schematic diagram of a control system for crystal growth based on a 180-type crystal furnace provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. Based on the embodiments of this application, every other embodiment obtained by those skilled in the art without inventive effort falls within the scope of protection of this application.
[0021] Currently, the industry commonly uses a 160-type (1600mm diameter furnace) single crystal furnace based on the traditional Czochralski Method (CZ method) for single crystal silicon growth. The basic process is as follows: High-purity polycrystalline silicon is loaded into a quartz crucible, which is placed inside a graphite heater. The silicon is heated to above 1420°C and melted into a silicon melt under an inert gas (usually argon) protective environment by the main heating system. After the melt stabilizes, a seed crystal, pre-fixed on a seed crystal axis, is lowered until it contacts the melt surface. By precisely controlling the seed crystal's pulling speed, rotation speed, and the crucible's lifting and rotation speeds, while simultaneously precisely adjusting the heater power and argon flow rate, the melt begins to crystallize at the lower end of the seed crystal and continues to grow as the seed crystal is gradually pulled up, ultimately forming a single crystal silicon rod with a certain diameter and length.
[0022] However, throughout the growth process, the control system mainly relies on independent PID (proportional-integral-derivative) control of several key parameters (such as pulling speed, temperature, crucible rotation, and crystal rotation). Operators typically set the process formula based on experience, and the system controls according to preset curves, lacking real-time, dynamic, and intelligent coordination between parameters.
[0023] Based on this, the present application provides a control method and device for crystal growth based on a 180-type crystal furnace, which can realize real-time, dynamic, and intelligent coordinated adjustment between parameters, thereby ensuring stable crystal growth.
[0024] Please see Figure 1 , Figure 1 This is a flowchart illustrating a control method for crystal growth based on a 180-type crystal furnace, provided as an embodiment of this application. Figure 1 As shown in the embodiments of this application, the control method includes: S101. Determine the growth stage of the target crystal in the 180-type crystal furnace; S102. Based on the determined crystal growth stage, obtain the current values of multiple influencing factors related to crystal growth under the growth stage, and obtain the current value of at least one control index corresponding to the growth stage. S103. For each influencing factor, determine the parameter adjustment amount of the influencing factor based on the current value and the standard value of the influencing factor. For each control indicator obtained, determine the parameter adjustment amount of the control indicator based on the current value and the standard value of the control indicator. S104. Based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and combined with the coupling relationship between the influencing factors, generate a set of equipment control instructions for controlling the stable growth of the target crystal. S105. For each control instruction in the device control instruction set, control the corresponding target device according to the control instruction.
[0025] The exemplary steps of the embodiments of this application are described below: For step S101, the 180-type crystal furnace is a single crystal furnace with a furnace cylinder diameter of 1800mm. The growth stage includes the melting stage, crystal pulling stage, shoulder formation stage, constant diameter stage, and finishing stage.
[0026] Regarding the Type 180 crystal furnace, it should be noted that the furnace chamber diameter is increased to ≥1800 mm, allowing the use of 36-40 inch crucibles and increasing the feed rate to 900 kg-1200 kg, resulting in a 20% increase in single-cycle growth weight. Furthermore, through multi-parameter coupled control, the average pulling speed can be significantly improved and the growth cycle shortened while ensuring crystal quality. Specifically, the average pulling speed during the constant diameter stage is stably increased from 1 mm / min to 1.3-1.5 mm / min, resulting in a ~30% increase in growth rate.
[0027] It should also be noted that although the amount of feed increased, the higher pulling speed allowed the equal diameter growth time to be controlled within 40-48 hours, and the total growth cycle to be shortened to 60-68 hours.
[0028] For example, based on a feed rate of 950kg, a working time of 64 hours, and a cycle time, the annual production capacity of a single unit is (950kg / 64h). 24h 330 ≈ 117.5 tons / year, compared to a 160-type furnace (650 kg / 64 h). 24h (330≈80.5 tons / year) increased by 68%.
[0029] Furthermore, intelligent collaborative control ensures extreme stability of the growth process, reduces defect generation, and improves crystallization rate and first-grade yield. Shorter growth cycles and more precise process control directly reduce power consumption and argon consumption per unit output.
[0030] For step S102, the influencing factors and control indicators for different growth stages may not be the same.
[0031] For example, influencing factors may include: heating power, furnace pressure, argon flow rate, crucible rotation speed, etc. Control parameters may include: growth interface temperature gradient, crystal diameter, and melt temperature.
[0032] Furthermore, in one embodiment provided in this application, when the determined crystal growth stage is the melting stage, the current power of the main heater, the current power of the auxiliary heater, the current pressure inside the furnace, the current argon flow rate, the current crucible rotation speed, and the current melt temperature are obtained.
[0033] When the determined crystal growth stage is the seed crystal stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current solid-liquid interface temperature.
[0034] When the determined crystal growth stage is the shoulder formation stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal diameter.
[0035] When the determined crystal growth stage is the constant diameter stage, obtain the current rotation speed of the seed crystal, the current pulling speed of the seed crystal, the current power of the main heater, the current power of the auxiliary heater, the current pressure in the furnace, the current flow rate of argon gas, and the current oxygen content in the furnace. When the determined crystal growth stage is the final stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal cooling rate.
[0036] Regarding step S103, the standard values corresponding to the same influencing factor may not be the same at different growth stages. For example, this application provides standard values for multiple influencing factors at different growth stages, as shown below: During the melting stage, the standard power range for the main heater is 80-100kW; the standard power range for the auxiliary heater is 30-40kW; the standard power ratio between the main and auxiliary heaters is 0.3-0.4; the standard furnace pressure range is 50-60 Torr; and the standard argon flow rate range is 80-100... / h; the standard range of crucible rotation speed is 5-8 r / min; the standard range of melt temperature is 1420-1430℃.
[0037] During the crystallization stage, the standard range for seed crystal rotation speed is 15-20 r / min; the standard range for seed crystal pulling speed is 0.3-0.5 mm / min; the standard range for main heater power is 75-85 kW; the standard range for auxiliary heater power is 25-35 kW; the standard range for the power ratio of main and auxiliary heaters is 0.35-0.45; the standard range for furnace pressure is 30-40 Torr; and the standard range for argon flow rate is 60-70. / h; the standard range for solid-liquid interface temperature is 1410-1415℃.
[0038] During the shoulder-forming stage, the standard power range for seed crystal rotation speed is 12-18 r / min; the standard range for seed crystal pulling speed is 0.5-0.8 mm / min; the standard range for main heater power is 70-80 kW; the standard range for auxiliary heater power is 20-30 kW; the standard range for the power ratio of main and auxiliary heaters is 0.4-0.5; the standard range for furnace pressure is 20-30 Torr; and the standard range for argon flow rate is 50-60. / h; the standard range for crystal diameter is 36-40 inches.
[0039] During the constant diameter stage, the standard range for seed crystal rotation speed is 10-15 r / min; the standard range for seed crystal pulling speed is 1.3-1.5 mm / min; the standard range for main heater power is 65-75 kW; the standard range for auxiliary heater power is 18-25 kW; the standard range for the power ratio of main and auxiliary heaters is 0.54-0.55; the standard range for furnace pressure is 15-25 Torr; and the standard range for argon flow rate is 40-50. / h; the standard range for oxygen content is ≤1.2× atoms / .
[0040] In the final stage, the standard range for seed crystal rotation speed is 8-12 r / min; the standard range for seed crystal pulling speed is 0.3-0.5 mm / min; the standard range for main heater power is 40-50 kW; the standard range for auxiliary heater power is 10-15 kW; the standard range for furnace pressure is 30-40 Torr; and the standard range for argon flow rate is 60-70 kW. / h; the standard range for crystal cooling rate is ≤5℃ / h.
[0041] Regarding step S104, in one embodiment provided in this application, the step of generating a set of equipment control instructions for controlling the stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and in combination with the coupling relationship between the influencing factors, includes: S1041. For each influencing factor, based on the predetermined coupling relationship between the influencing factors, determine at least one control model to adjust the influencing factor, and based on the parameter adjustment amount of the influencing factor, determine the first equipment control command from the determined control model.
[0042] S1042. For each control indicator, determine at least one control model to adjust the control indicator according to the type of the control indicator, and determine the second equipment control command based on the determined control model according to the parameter adjustment amount of the control indicator.
[0043] S1043. Obtain a set of device control instructions based on the first device control instruction and the second device control instruction.
[0044] In accordance with the above examples, in one embodiment provided in this application, the control model includes a multi-physics coupled digital control model, a multi-parameter coupled intelligent control model, and a directional exhaust and airflow coordinated control model; the multi-physics coupled digital control model includes a thermal field control sub-model, a melt flow field control sub-model, a gas flow field control sub-model, and a phase change field control sub-model; the directional exhaust and airflow coordinated control model includes a multi-path directional exhaust control sub-model, an oxygen concentration distribution prediction sub-model, and a dynamic exhaust valve control sub-model.
[0045] The control model used in this application incorporates a simplified real-time dynamic model that describes the coupling relationships between influencing factors (e.g., the effect of casting speed changes on interfacial heat flux and the effect of argon flow changes on melt surface heat dissipation). Through rolling optimization, the control model calculates an optimal combination of control commands (e.g., while increasing the casting speed ΔV, fine-tuning the heating power ΔP to compensate for interfacial heat loss, and fine-tuning the argon flow rate ΔG to stabilize volatile discharge), thereby ensuring that the thermodynamic balance of the growth interface is maintained throughout the dynamic adjustment process, achieving improved quality and efficiency.
[0046] For example, the control model in this application adopts an intelligent control model based on model predictive control (MPC), which can perform real-time rolling optimization with a period of 0.1 seconds.
[0047] The control model in this application adopts a cooperative control approach. For example, the control model can use the pulling speed (V), heater power (P), power ratio of main heater to auxiliary heater (P_top / P_main), argon flow rate (G), and furnace pressure (Pr) as cooperative variables.
[0048] For example, when the system decides to increase the pulling speed from 1.0 mm / min to 1.15 mm / min, the MPC model will simultaneously calculate that: the heater power needs to be increased by ~8 kW within 120 seconds to compensate for the interfacial heat loss, the argon flow rate needs to be finely adjusted by +5 m³ / h to cope with the increased SiO volatilization rate due to the increased pulling speed, and the furnace pressure needs to be reduced by ~1.5 Torr to maintain a stable gas flow field.
[0049] This feedforward-feedback composite control keeps the interface temperature fluctuation caused by the increased pulling speed within ±0.5℃ (compared to ±2.0℃ in traditional control), ensuring crystal quality under high-speed growth.
[0050] The multiphysics coupled digital control model in the control model provided in this application is a multiphysics coupled model that includes thermal field, flow field (melt & gas), and phase transition field, and achieves the following technical breakthroughs: A high-precision database has been established covering the thermal properties (thermal conductivity, specific heat capacity, emissivity, viscosity, etc.) of all materials, including quartz crucibles, graphite parts, silicon melts, and argon gas, at high temperatures of 1400-1700°C.
[0051] By employing the Discrete Coordinate Method (DO) or Monte Carlo Method (MC) based on the View Factor, the multiple radiative heat transfers between the graphite heater, heat shield, crucible, and crystal were accurately handled, which is the key to the accuracy of high-temperature thermal field simulation.
[0052] Large eddy simulation (LES) or an improved k-ε turbulence model is used to simulate melt convection, and the fluid volume (VOF) method or level set method is combined to accurately track the solid-liquid / gas-liquid free interface morphology.
[0053] By fully coupling the argon gas flow field (low-speed compressible fluid) with the free surface of the melt (boundary conditions) and the thermal field structure (buoyancy effect), the influence of argon gas on the heat dissipation of the melt surface and the SiO carrying process is accurately simulated.
[0054] This high-fidelity model is used for offline optimization of thermal field design and process formulation, and generates a simplified model that is embedded in an online real-time control system.
[0055] Furthermore, this application designs a multi-directional exhaust system on the 180-type single crystal furnace hardware, with multiple independently adjustable exhaust valves arranged circumferentially in the upper part of the furnace chamber. Based on the oxygen concentration distribution inside the furnace (originating from SiO volatilization) predicted by the multi-physics coupled digital control model, the multi-parameter coupled intelligent control model dynamically adjusts the opening of each exhaust valve to form the optimal airflow organization pointing towards the strongest volatilization region, achieving directional suction and greatly improving oxygen removal efficiency.
[0056] In this way, the airflow control algorithm and the thermal field control algorithm interact with each other. Any adjustment to the exhaust strategy will be input as a disturbance into the thermal field model. The thermal field control model will predict its impact on the melt surface temperature in advance and compensate for it, thereby ensuring the absolute stability of the crystal growth thermal environment while efficiently removing oxygen, and ultimately achieving precise closed-loop control of oxygen content.
[0057] Continuing with the above example, the control models corresponding to the same influencing factor or control index may be the same or different at different growth stages. For example, this application provides control models corresponding to influencing factors or control indicators at different growth stages, and provides corresponding adjustment methods, as shown below: During the melting stage, the control models corresponding to the power of the main heater and the power of the auxiliary heater are a multi-physics field coupled digital control model and a multi-parameter coupled intelligent control model. The multi-physics field coupled digital control model predicts the thermal field distribution, heats up in three stages to avoid thermal shock to the crucible, and the multi-parameter coupled intelligent control model dynamically fine-tunes the power. The control model corresponding to the furnace pressure is a multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. As the melting point of silicon material gradually decreases, the directional exhaust and airflow coordinated control model adjusts the valve opening to maintain airflow stability. The control model corresponding to the argon flow rate is a directional exhaust and airflow coordinated control model + a multi-physics field coupled digital control model. The physical field coupled digital control model predicts the SiO volatilization amount, and the directional exhaust valve is fully opened to improve the SiO discharge efficiency. The control model corresponding to the crucible rotation speed is a multi-parameter coupled intelligent control model. The multi-parameter coupled intelligent control model controls the low-speed rotation to ensure that the melt is heated evenly and to avoid local overheating. The control model corresponding to the melt temperature is a multi-physics field coupled digital control model + a multi-parameter coupled intelligent control model. The infrared thermometer provides real-time feedback data, the multi-physics field coupled digital control model is used for correction, and the multi-parameter coupled intelligent control model dynamically fine-tunes the heating power.
[0058] During the seed crystal development stage, the control model corresponding to the seed crystal rotation speed and seed crystal pulling speed is a multi-physics field coupled digital control model + multi-parameter coupled intelligent control model. The multi-physics field coupled digital control model calculates the solid-liquid interface temperature gradient, and the multi-parameter coupled intelligent control model gradually increases the pulling speed to stabilize the formation of crystal nuclei.
[0059] The control models corresponding to the power of the main heater and the power of the auxiliary heater are a multi-physics field coupled digital control model + a multi-parameter coupled intelligent control model. The intelligent controller maintains the interface temperature stability, and the fluctuation is controlled within ±0.5℃. The multi-physics model is corrected in real time. The control model corresponding to the furnace pressure is a multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. With the low volatility in the crystal pulling stage, the intelligent controller reduces the pressure and the directional exhaust system optimizes the airflow. The control model corresponding to the argon flow rate is a directional exhaust and airflow coordinated control model + a multi-physics field coupled digital control model. The directional exhaust and airflow coordinated control model controls the directional exhaust valve to open by 60% and focuses the airflow above the solid-liquid interface. The multi-physics field coupled digital control model verifies the rationality of the airflow. The control model corresponding to the solid-liquid interface temperature is a multi-physics coupled digital control model + a multi-parameter coupled intelligent control model. The multi-physics coupled digital control model predicts the interface position, and the multi-parameter coupled intelligent control model dynamically adjusts the heating power to compensate for heat loss.
[0060] During the shoulder formation stage, the control model corresponding to the seed crystal rotation speed and seed crystal pulling speed is a multi-physics field coupled digital control model + multi-parameter coupled intelligent control model. The multi-parameter coupled intelligent control model adjusts the rotation speed and pulling speed in coordination according to the crystal diameter growth rate, while the multi-physics field coupled digital control model optimizes the shoulder formation angle.
[0061] The control models corresponding to the power of the main heater and the power of the auxiliary heater are a multi-physics field coupled digital control model and a multi-parameter coupled intelligent control model. As the surface area of the crystal increases, the multi-parameter coupled intelligent control model gradually reduces the power to maintain the interface temperature equilibrium. The control model corresponding to the furnace pressure is a multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. The parameter coupled intelligent control model stabilizes the pressure, while the directional exhaust and airflow coordinated control model ensures the stability of the airflow field and avoids oxidation of the crystal surface. The control model corresponding to the argon flow rate is a directional exhaust and airflow coordinated control model + a multi-physics field coupled digital control model. The directional exhaust and airflow coordinated control model controls the directional exhaust valve to open by 80%. Based on the oxygen concentration distribution predicted by the multi-physics field coupled digital control model, the valve opening ratio is adjusted. The control model corresponding to the crystal diameter is a multi-parameter coupled intelligent control model. The multi-parameter coupled intelligent control model monitors the diameter change in real time and adjusts the pulling speed and heating power accordingly. This model is verified by a multi-physics model.
[0062] During the constant diameter stage, the control model corresponding to the seed crystal rotation speed and seed crystal pulling speed is a multi-physics field coupled digital control model + multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. During the core coupling regulation stage, when the pulling speed is increased, the multi-parameter coupled intelligent control model synchronously adjusts the power and airflow, and the multi-physics field coupled digital control model makes real-time corrections.
[0063] The control models corresponding to the power of the main heater and the power of the auxiliary heater are a multi-physics field coupled digital control model + a multi-parameter coupled intelligent control model. When the pulling speed increases by 10%, the power increases by 5%-8% simultaneously. The multi-parameter coupled intelligent control model accurately compensates for the interface heat loss. The control model corresponding to the furnace pressure is a multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. When the pulling speed is increased, the pressure decreases by 1.5-2 Torr. The multi-parameter coupled intelligent control model and the directional exhaust and airflow coordinated control model work together to maintain airflow stability. The control model corresponding to the argon flow rate is a directional exhaust and airflow coordinated control model + a multi-parameter coupled intelligent control model. When the pulling speed is increased, the flow rate increases by 5-8 m³ / h. The directional exhaust valve dynamically adjusts the opening to improve the SiO discharge efficiency. The control model corresponding to the oxygen content is a multi-physics field coupled digital control model + directional exhaust and airflow coordinated control model. The multi-physics field coupled digital control model predicts the oxygen distribution, and the directional exhaust and airflow coordinated control model adjusts the valve opening to achieve directional suction and precise oxygen control.
[0064] In the final stage, the control model corresponding to the seed crystal rotation speed and seed crystal pulling speed is a multi-physics field coupled digital control model + multi-parameter coupled intelligent control model. As the crystal diameter decreases, the multi-parameter coupled intelligent control model gradually reduces the pulling speed to avoid crystal breakage. The stability of the multi-physics field coupled digital control model is verified.
[0065] The control models corresponding to the power of the main heater and the power of the auxiliary heater are a multi-physics field coupled digital control model and a multi-parameter coupled intelligent control model. With the reduction of the pulling speed, the multi-parameter coupled intelligent control model gradually cools down the crystal to reduce crystal stress. The control model corresponding to the furnace pressure is a multi-parameter coupled intelligent control model + directional exhaust and airflow coordinated control model. In the final stage, the pressure is increased, and the directional exhaust and airflow coordinated control model is adjusted in conjunction to prevent oxidation of the crystal surface. The control model corresponding to the argon flow rate is a directional exhaust and airflow coordinated control model. The directional exhaust valve is fully open to discharge residual SiO gas. The rationality of the airflow is verified by a multi-physics model. The control model corresponding to the crystal cooling rate is a multi-physics field coupled digital control model + multi-parameter coupled intelligent control model. Based on the phase transition field model, the intelligent controller controls the cooling rate to reduce lattice defects.
[0066] For step S105, this step specifically includes determining the target device that executes the control instruction for each control instruction in the device control instruction set, and controlling the target device to work according to the control instruction in order to achieve high-speed and stable crystal growth.
[0067] Based on the same inventive concept, this application also provides a control system corresponding to the control method. Since the principle of the system in this application to solve the problem is similar to the control method described above in this application, the implementation of the system can refer to the implementation of the method, and the repeated parts will not be described again.
[0068] Please see Figure 2 , Figure 2 This is a schematic diagram of a control system for crystal growth based on a 180-type crystal furnace, provided as an embodiment of this application. Figure 2 As shown, the control system 200 includes: The first determining module 210 is used to determine the growth stage of the target crystal in the 180-type crystal furnace; The acquisition module 220 is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage. The second determining module 230 is used to determine the parameter adjustment amount of each influencing factor based on its current value and standard value, and to determine the parameter adjustment amount of each control indicator based on its current value and standard value. The generation module 240 is used to generate a set of equipment control instructions for controlling the stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and in combination with the coupling relationship between the influencing factors. The control module 250 is used to control the corresponding target device according to each control instruction in the device control instruction set.
[0069] Optionally, when the acquisition module 220 is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage, the acquisition module 220 is used to: When the determined crystal growth stage is the melting stage, obtain the current power of the main heater, the current power of the auxiliary heater, the current pressure inside the furnace, the current argon flow rate, the current crucible rotation speed, and the current temperature of the melt.
[0070] Optionally, when the acquisition module 220 is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage, the acquisition module 220 is used to: When the determined crystal growth stage is the seed crystal stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current solid-liquid interface temperature.
[0071] Optionally, when the acquisition module 220 is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage, the acquisition module 220 is used to: When the determined crystal growth stage is the shoulder formation stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal diameter.
[0072] Optionally, when the acquisition module 220 is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage, the acquisition module 220 is used to: When the determined crystal growth stage is the constant diameter stage, obtain the current rotation speed of the seed crystal, the current pulling speed of the seed crystal, the current power of the main heater, the current power of the auxiliary heater, the current pressure in the furnace, the current flow rate of argon gas, and the current oxygen content in the furnace. When the determined crystal growth stage is the final stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal cooling rate.
[0073] Optionally, when the generation module 240 generates a set of equipment control instructions for the stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and in combination with the coupling relationship between the influencing factors, the generation module 240 is used to: For each influencing factor, based on the predetermined coupling relationship between the influencing factors, at least one control model is determined to adjust the influencing factor, and based on the parameter adjustment amount of the influencing factor, the first equipment control command is determined from the determined control model. For each control indicator, at least one control model is determined according to the type of the control indicator, and a second equipment control command is determined based on the determined control model according to the parameter adjustment amount of the control indicator. A set of device control instructions is obtained based on the first device control instruction and the second device control instruction.
[0074] Optionally, the control model includes a multi-physics coupled digital control model, a multi-parameter coupled intelligent control model, and a directional exhaust and airflow coordinated control model; the multi-physics coupled digital control model includes a thermal field control sub-model, a melt flow field control sub-model, a gas flow field control sub-model, and a phase change field control sub-model; the directional exhaust and airflow coordinated control model includes a multi-path directional exhaust control sub-model, an oxygen concentration distribution prediction sub-model, and a dynamic exhaust valve control sub-model.
[0075] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Figure 3 As shown, the electronic device 300 includes a processor 310, a memory 320, and a bus 330.
[0076] The memory 320 stores machine-readable instructions executable by the processor 310. When the electronic device 300 is running, the processor 310 and the memory 320 communicate via the bus 330. When the machine-readable instructions are executed by the processor 310, they can perform the operations described above. Figure 1 The steps in the method embodiment shown are described in detail in the method embodiment, and will not be repeated here.
[0077] This application also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, can perform the above-described actions. Figure 1 The steps in the method embodiment shown are described in detail in the method embodiment, and will not be repeated here.
[0078] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.
[0079] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the shown or discussed mutual couplings, direct couplings, or communication connections may be through some communication interfaces; indirect couplings or communication connections between devices or units may be electrical, mechanical, or other forms.
[0080] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0081] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.
[0082] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0083] Finally, it should be noted that the above-described embodiments are merely specific implementations of this application, used to illustrate the technical solutions of this application, and not to limit them. The scope of protection of this application is not limited thereto. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the scope of the technology disclosed in this application. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A method for controlling crystal growth based on a 180-type crystal furnace, characterized in that, The control method includes: Determine the growth stage of the target crystal in the 180-type crystal furnace; Based on the determined crystal growth stage, obtain the current values of multiple influencing factors related to crystal growth at the growth stage, and obtain the current value of at least one control index corresponding to the growth stage. For each influencing factor, the parameter adjustment amount is determined based on the current value and the standard value of the influencing factor. For each control indicator obtained, the parameter adjustment amount is determined based on the current value and the standard value of the control indicator. Based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and combined with the coupling relationship between the influencing factors, a set of equipment control instructions for controlling the stable growth of the target crystal is generated. For each control instruction in the device control instruction set, control of the corresponding target device is performed according to the control instruction.
2. The control method according to claim 1, characterized in that, The step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the melting stage, obtain the current power of the main heater, the current power of the auxiliary heater, the current pressure inside the furnace, the current argon flow rate, the current crucible rotation speed, and the current temperature of the melt.
3. The control method according to claim 1, characterized in that, The step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the seed crystal stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current solid-liquid interface temperature.
4. The control method according to claim 1, characterized in that, The step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the shoulder formation stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal diameter.
5. The control method according to claim 1, characterized in that, The step of obtaining the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and obtaining the current value of at least one control index corresponding to the growth stage, includes: When the determined crystal growth stage is the constant diameter stage, obtain the current rotation speed of the seed crystal, the current pulling speed of the seed crystal, the current power of the main heater, the current power of the auxiliary heater, the current pressure in the furnace, the current flow rate of argon gas, and the current oxygen content in the furnace. When the determined crystal growth stage is the final stage, obtain the current seed crystal rotation speed, current seed crystal pulling speed, current main heater power, current auxiliary heater power, current furnace pressure, current argon flow rate, and current crystal cooling rate.
6. The control method according to claim 1, characterized in that, The process of generating a set of equipment control instructions for the stable growth of the target crystal, based on the parameter adjustments of all influencing factors and all control indicators corresponding to the current growth stage, and in conjunction with the coupling relationships between the influencing factors, includes: For each influencing factor, based on the predetermined coupling relationship between the influencing factors, at least one control model is determined to adjust the influencing factor, and based on the parameter adjustment amount of the influencing factor, the first equipment control command is determined from the determined control model. For each control indicator, at least one control model is determined according to the type of the control indicator, and a second equipment control command is determined based on the determined control model according to the parameter adjustment amount of the control indicator. A set of device control instructions is obtained based on the first device control instruction and the second device control instruction.
7. The control method according to claim 6, characterized in that, The control model includes a multi-physics coupled digital control model, a multi-parameter coupled intelligent control model, and a directional exhaust and airflow coordinated control model; the multi-physics coupled digital control model includes a thermal field control sub-model, a melt flow field control sub-model, a gas flow field control sub-model, and a phase change field control sub-model; the directional exhaust and airflow coordinated control model includes a multi-path directional exhaust control sub-model, an oxygen concentration distribution prediction sub-model, and a dynamic exhaust valve control sub-model.
8. A control system for crystal growth based on a 180-type crystal furnace, characterized in that, The control system includes: The first determining module is used to determine the growth stage of the target crystal in the 180-type crystal furnace; The acquisition module is used to acquire the current values of multiple influencing factors related to crystal growth at the determined crystal growth stage, and to acquire the current value of at least one control index corresponding to the growth stage. The second determining module is used to determine the parameter adjustment amount of each influencing factor based on its current value and standard value, and to determine the parameter adjustment amount of each control indicator based on its current value and standard value. The generation module is used to generate a set of equipment control instructions for the stable growth of the target crystal based on the parameter adjustment amounts of all influencing factors and all control indicators corresponding to the current growth stage, and in combination with the coupling relationship between the influencing factors. The control module is used to control the corresponding target device according to each control instruction in the device control instruction set.
9. An electronic device, characterized in that, include: The device includes a processor, a memory, and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor communicates with the memory via the bus, and the machine-readable instructions are executed by the processor to perform the steps of the control method as described in any one of claims 1 to 7.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, performs the steps of the control method as described in any one of claims 1 to 7.