Gallium arsenide solar cell, preparation method thereof and application of gallium arsenide solar cell in irradiation dose calibration
By fabricating gallium arsenide solar cell structures, the problem of efficiency degradation caused by high-energy particle bombardment during on-orbit operation of solar cells was solved, and accurate calibration of irradiation dose was achieved, ensuring the stability and consistency of cell performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TIANJIN LANTIAN SOLAR TECH
- Filing Date
- 2025-12-30
- Publication Date
- 2026-05-15
AI Technical Summary
Existing solar cells are bombarded by high-energy particles from Earth's radiation belts during their on-orbit operation, which leads to an increase in carrier recombination rate, a decrease in cell efficiency, and inaccurate irradiation dose calibration.
The structure employs a gallium arsenide solar cell, comprising a gallium arsenide substrate and, from bottom to top, a GaAs nucleation layer, a GaAs buffer layer, a Ga0.5In0.5P back field, a GaAs base region, a GaAs emitter region, a Ga0.5In0.5P window layer, and a GaAs cap layer. These layers are grown using metal-organic chemical vapor deposition (MOCVD) and are used for irradiation dose calibration during irradiation experiments.
It achieves stability and batch uniformity of gallium arsenide solar cells, and can accurately calibrate the irradiation dose during each irradiation test to maintain consistent cell performance.
Smart Images
Figure CN122054744A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of solar cell structure technology, and in particular to a gallium arsenide solar cell, its preparation method, and its application in irradiation dose calibration. Background Technology
[0002] A solar cell is a device that converts light energy into electrical energy. It absorbs photons from the sun, generating electron-hole pairs within a semiconductor. A built-in electric field then separates these electron-hole pairs to produce a photocurrent. For space-based solar cells, during their on-orbit operation, they are bombarded by high-energy particles from Earth's radiation belts, creating defects within the cell. This leads to an increased carrier recombination rate and a decrease in cell efficiency. Therefore, radiation resistance is a crucial performance indicator for solar cells.
[0003] Besides the solar cell structure, the consistency between the irradiation dose from the charged particle accelerator and the irradiation dose from the on-orbit operating environment is crucial to the irradiation performance of solar cells. To ensure the accuracy of the irradiation dose, it is imperative to calibrate the irradiation dose during each irradiation test. Summary of the Invention
[0004] The purpose of this invention is to provide a gallium arsenide solar cell to address the technical deficiencies in the prior art.
[0005] Another object of the present invention is to provide a method for preparing the gallium arsenide solar cell.
[0006] Another object of the present invention is to provide the application of the gallium arsenide solar cell in irradiation dose calibration.
[0007] The technical solution adopted to achieve the purpose of this invention is: A gallium arsenide (GaAs) solar cell, wherein the epitaxial structure of the GaAs solar cell includes a gallium arsenide substrate, and GaAs nucleation layer, GaAs buffer layer, and GaAs layer disposed on the gallium arsenide substrate from bottom to top. 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 P-window layer and GaAs cap layer.
[0008] In the above technical solution, the GaAs nucleation layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs nucleation layer is 500–700℃ and the thickness is 10–1000nm.
[0009] In the above technical solution, the GaAs buffer layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs buffer layer is 600–800℃ and the thickness is 200–2000nm.
[0010] In the above technical solution, the Ga 0.5 In 0.5 The P-back field is p-type doped, and the p-type dopant is Zn, Mg, or C, Ga 0.5 In 0.5 The growth temperature of the P-back field is 600–800℃, and the thickness is 20–2000 nm.
[0011] In the above technical solution, the GaAs base region is p-type doped, and the p-type dopant is Zn, Mg or C, with a thickness of 20-3000 nm.
[0012] In the above technical solution, the GaAs emitter region is n-type doped, and the n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
[0013] In the above technical solution, the Ga 0.5 In 0.5 The P-window layer is n-type doped, with the n-type dopant being Si, Se, or Te, and its thickness ranges from 20 to 3000 nm.
[0014] In the above technical solution, the GaAs cap layer is n-type doped, and the n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
[0015] Another aspect of the present invention includes a method for preparing the gallium arsenide solar cell comprising the following steps: Step 1: Using metal-organic chemical vapor deposition (MOCVD), GaAs nucleation layer, GaAs buffer layer, and GaAs layer are sequentially grown on a gallium arsenide substrate. 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 P-window layer and GaAs cap layer; The growth temperature of the GaAs nucleation layer is 500–700℃; The growth temperature of the GaAs buffer layer is 600–800℃; Ga 0.5 In 0.5 The growth temperature for the P-back field is 600–800℃; The growth temperature of GaAs-based regions is 600–800℃; The growth temperature of the GaAs emitter region is 600–800℃; Ga 0.5 In 0.5 The growth temperature of the P-window layer is 600–800℃; The growth temperature of the GaAs cap layer is 600–800℃.
[0016] Another aspect of the present invention includes the application of the gallium arsenide solar cell in irradiation dose calibration. When conducting irradiation tests on a new structure solar cell, the gallium arsenide solar cell is used simultaneously for irradiation to calibrate the irradiation dose and correct irradiation dose fluctuations.
[0017] Compared with the prior art, the beneficial effects of the present invention are: 1. This invention proposes a gallium arsenide solar cell whose device and assembly process are exactly the same as those of a forward-matched triple-junction solar cell, and it is easy to manufacture; 2. Because the gallium arsenide solar cell of the present invention has a simple structure, stable process, good batch uniformity, and consistent performance degradation after being irradiated by charged particles, the gallium arsenide solar cell of the present invention can be used to calibrate the irradiation dose during each irradiation test. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the gallium arsenide solar cell structure of the present invention. Detailed Implementation
[0019] The present invention will be further described in detail below with reference to specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
[0020] Example 1 like Figure 1 As shown, a gallium arsenide (GaAs) solar cell has an epitaxial structure comprising a GaAs substrate and, from bottom to top, a GaAs nucleation layer, a GaAs buffer layer, and a GaAs layer disposed on the GaAs substrate. 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 P-window layer and GaAs cap layer; Furthermore, the GaAs nucleation layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs nucleation layer is 500–700℃, and the thickness is 10–1000 nm.
[0021] Furthermore, the GaAs buffer layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs buffer layer is 600–800℃ and the thickness is 200–2000 nm.
[0022] Furthermore, the Ga 0.5 In 0.5 The P-back field is p-type doped, and the p-type dopant is Zn, Mg, or C, Ga0.5 In 0.5 The growth temperature of the P-back field is 600–800℃, and the thickness is 20–2000 nm.
[0023] Furthermore, the GaAs base region is p-type doped, and the p-type dopant is Zn, Mg or C, with a thickness of 20-3000 nm.
[0024] Furthermore, the GaAs emitter region is n-type doped, and the n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
[0025] Furthermore, the Ga 0.5 In 0.5 The P-window layer is n-type doped, with the n-type dopant being Si, Se, or Te, and its thickness is 20-3000 nm.
[0026] Furthermore, the GaAs cap layer is n-type doped, and the n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
[0027] Example 2 This embodiment provides a method for preparing the gallium arsenide solar cell described in Embodiment 1, including the following steps: A GaAs nucleation layer, a GaAs buffer layer, and a GaAs layer were sequentially grown on a gallium arsenide substrate using metal-organic chemical vapor deposition (MOCVD). 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 The P-window layer and the GaAs cap layer, where: The growth temperature of the GaAs nucleation layer is 500–700℃, and the thickness is 10–1000 nm; The growth temperature of the GaAs buffer layer is 600–800℃, and the thickness is 200–2000 nm. Ga 0.5 In 0.5 The growth temperature of the P-back field is 600–800℃, and the thickness range is 20–2000 nm. The growth temperature of the GaAs base region is 600–800℃, and the thickness ranges from 20 to 3000 nm; The growth temperature of the GaAs emitter region is 600–800℃, and the thickness is 20–3000 nm; Ga 0.5 In 0.5 The growth temperature of the P-window layer is 600–800℃, and the thickness ranges from 20 to 3000 nm. The growth temperature of the GaAs cap layer is 600–800℃, and the thickness is 20–3000 nm.
[0028] Example 3 This embodiment provides the application of the gallium arsenide solar cell described in Embodiment 1 in irradiation dose calibration. When conducting irradiation tests on the new structure solar cell, the gallium arsenide solar cell is used simultaneously for irradiation to calibrate the irradiation dose and correct irradiation dose fluctuations.
[0029] The above description is only a preferred embodiment of the present invention. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A gallium arsenide solar cell, characterized in that, The gallium arsenide solar cell epitaxial structure includes a gallium arsenide substrate, and GaAs nucleation layer, GaAs buffer layer, and GaAs layer disposed on the gallium arsenide substrate from bottom to top. 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 P-window layer and GaAs cap layer.
2. The gallium arsenide solar cell according to claim 1, characterized in that, The GaAs nucleation layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs nucleation layer is 500–700℃ and the thickness is 10–1000 nm.
3. The gallium arsenide solar cell according to claim 1, characterized in that, The GaAs buffer layer is p-type doped, and the p-type dopant is Zn, Mg or C. The growth temperature of the GaAs buffer layer is 600–800℃ and the thickness is 200–2000 nm.
4. The gallium arsenide solar cell according to claim 1, characterized in that, The Ga 0.5 In 0.5 The P-back field is p-type doped, and the p-type dopant is Zn, Mg, or C, Ga 0.5 In 0.5 The growth temperature of the P-back field is 600–800℃, and the thickness is 20–2000 nm.
5. The gallium arsenide solar cell according to claim 1, characterized in that, The GaAs base region is p-type doped, and the p-type dopant is Zn, Mg or C, with a thickness of 20-3000 nm.
6. The gallium arsenide solar cell according to claim 1, characterized in that, The GaAs emitter region is n-type doped, and its n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
7. The gallium arsenide solar cell according to claim 1, characterized in that, The Ga 0.5 In 0.5 The P-window layer is n-type doped, with the n-type dopant being Si, Se, or Te, and its thickness ranges from 20 to 3000 nm.
8. The gallium arsenide solar cell according to claim 1, characterized in that, The GaAs cap layer is n-type doped, and the n-type dopant is Si, Se or Te, with a thickness of 20-3000 nm.
9. The method for preparing a gallium arsenide solar cell according to any one of claims 1 to 8, characterized in that, Includes the following steps: A GaAs nucleation layer, a GaAs buffer layer, and a GaAs layer were sequentially grown on a gallium arsenide substrate using metal-organic chemical vapor deposition (MOCVD). 0.5 In 0.5 P-back field, GaAs base region, GaAs emitter region, Ga 0.5 In 0.5 P-window layer and GaAs cap layer; The growth temperature of the GaAs nucleation layer is 500–700℃; The growth temperature of the GaAs buffer layer is 600–800℃; Ga 0.5 In 0.5 The growth temperature for the P-back field is 600–800℃; The growth temperature of GaAs-based regions is 600–800℃; The growth temperature of the GaAs emitter region is 600–800℃; Ga 0.5 In 0.5 The growth temperature of the P-window layer is 600–800℃; The growth temperature of the GaAs cap layer is 600–800℃.
10. The application of gallium arsenide solar cells as described in any one of claims 1 to 8 in irradiation dose calibration, characterized in that, When conducting irradiation tests on solar cells, the gallium arsenide solar cells are simultaneously irradiated to calibrate the irradiation dose and correct irradiation dose fluctuations.