Transparent conductive anti-PID composite copper grid and preparation method thereof

Abstract

The invention discloses a transparent conductive anti-PID composite copper grid which comprises a packaging protection layer, a transparent conductive auxiliary layer, an anti-PID modified layer, a metal grid copper transparent electrode layer and a transparent substrate. According to the invention, the migration of active ions is prevented by using the high insulativity of nano aluminum oxide, and the adhesive force between the film layer and the copper grid and the transparent substrate is improved by silicon dioxide, so that the PID phenomenon is inhibited; by adopting a transparent material and a multilayer material composite structure design, the high conductivity of copper and the light transmission of the transparent material are synergistically exerted. The service life of the composite copper grid is prolonged through the triple protection design, and the later maintenance cost is reduced; according to the preparation method, indium is replaced by copper, so that the material cost is greatly reduced, a mature preparation process is adopted, and the preparation method is compatible with an existing photovoltaic module production line. The composite copper grid provided by the invention not only can be adapted to a rigid crystalline silicon photovoltaic module, but also can be used for a flexible film photovoltaic module and a BIPV (building integrated photovoltaics) transparent curtain wall, and meets the requirements of light transmission and PID resistance in different scenes.

Description

Technical Field

[0001] This invention relates to the fields of photovoltaic technology and transparent conductive materials, and more specifically, to a transparent heating film with a composite conductive layer and its preparation method. Background Technology

[0002] As the global photovoltaic industry rapidly develops towards higher efficiency and longer lifespan, potential-induced degradation (PID) has become a key bottleneck restricting the long-term stable operation of photovoltaic modules. In high-temperature and high-humidity environments, active ions such as sodium and potassium ions inside the module easily migrate along the interface between the encapsulation material and the transparent electrode, leading to damage to the passivation layer on the cell surface and a decrease in parallel resistance. Ultimately, this results in a power degradation of 10% to 30%, severely impacting the return on investment of the photovoltaic system.

[0003] The transparent conductive electrodes of existing photovoltaic modules are mainly divided into two categories: one is indium tin oxide (ITO) electrodes, which have good light transmittance and conductivity, but have drawbacks such as high cost due to the scarcity of indium resources, poor flexibility and easy brittleness, and oxygen vacancies easily becoming ion migration channels, resulting in weak resistance to PID fabrication methods; the other is ordinary copper grid electrodes, which have lower cost than ITO fabrication methods and better conductivity, but have problems such as copper wires being easily oxidized by moisture, leading to increased sheet resistance, and lack of PID resistance design, making it impossible to suppress ion migration.

[0004] Existing anti-PID (Potential Ingress Protection) methods primarily address the issue from the perspective of the system (e.g., inverter negative electrode grounding) or auxiliary materials (e.g., anti-PID encapsulation films), failing to construct an anti-PID barrier within the transparent electrode itself. This approach fails to address the problem at its root and suffers from limitations such as poor compatibility and increased costs. Therefore, developing a transparent conductive electrode that combines high light transmittance, low sheet resistance, and strong anti-PID properties has become an urgent need for the photovoltaic industry. Summary of the Invention

[0005] The main objective of this invention is to provide a transparent conductive anti-PID composite copper mesh and its preparation method. By blocking ion migration with an anti-PID modified layer, optimizing conductivity and stability with a transparent conductive auxiliary layer, and isolating environmental corrosion with an encapsulation protective layer, the invention ultimately achieves long lifespan and high reliability of photovoltaic modules.

[0006] To achieve the above objectives, a transparent conductive anti-PID composite copper mesh according to the present invention comprises, from top to bottom, an encapsulation protective layer, a transparent conductive auxiliary layer, an anti-PID modification layer, a metal mesh copper transparent electrode layer, and a transparent substrate; the metal mesh copper transparent electrode layer is formed on the transparent substrate; the anti-PID modification layer covers the surface and mesh gaps of the metal mesh copper transparent electrode layer; the transparent conductive auxiliary layer is deposited on the anti-PID modification layer; and the encapsulation protective layer covers the transparent conductive auxiliary layer.

[0007] Preferably, the anti-PID modification layer is a nano-alumina-silica composite film, with a mass ratio of nano-alumina to silica of 3:1 to 5:1 and a thickness of 50 to 100 nm.

[0008] Preferably, the transparent conductive auxiliary layer is aluminum-doped zinc oxide or reduced graphene oxide, with a thickness of 20~50nm.

[0009] Preferably, the encapsulation protective layer is an ethylene-vinyl acetate copolymer or a polyolefin elastomer with a thickness of 200~300μm.

[0010] Preferably, the transparent substrate is any one of polyimide, polyethylene terephthalate, or quartz glass.

[0011] A method for preparing a transparent conductive anti-PID composite copper mesh includes the following steps: Step S1: Select a transparent substrate material and clean and dry its surface; Step S2: Form a metal mesh copper transparent electrode layer on a transparent substrate using a photolithography etching process; Step S3: Using the sol-gel method or atomic layer deposition process, deposit a nano-alumina-silica composite film on the surface of the metal mesh copper transparent electrode layer and the transparent substrate at the mesh gaps to form an anti-PID modification layer; Step S4: Prepare a transparent conductive auxiliary layer on the anti-PID modified layer by a deposition process; Step S5: The ethylene-vinyl acetate copolymer or polyolefin elastomer is laminated with the transparent conductive auxiliary layer to form a protective layer for clothing, resulting in a transparent conductive anti-PID composite copper mesh.

[0012] Preferably, in step S4, a transparent conductive auxiliary layer is prepared by a deposition process. When the transparent conductive auxiliary layer is aluminum-doped zinc oxide, a magnetron sputtering process is used, with a sputtering power of 100~200W and a working pressure of 0.5~1.5Pa, and the process is carried out in an argon atmosphere.

[0013] Preferably, in step S4, a transparent conductive auxiliary layer is prepared by a deposition process. When the transparent conductive auxiliary layer is reduced graphene oxide, a spray thermal reduction method is used to spray the graphene oxide dispersion onto the anti-PID modified layer, and then thermal reduction is performed in an inert atmosphere at 300~500℃.

[0014] Preferably, in step S1, the cleaning method is ultrasonic cleaning or plasma cleaning, the drying temperature is 80-100℃, and the drying time is 20-30 min.

[0015] Preferably, in step S5, the lamination process is carried out at a temperature of 130~150℃, a pressure of 0.5~1MPa, a vacuum degree of <1Pa, and a time of 10~20min.

[0016] The advantages and beneficial effects of this invention are as follows: This invention constructs an ion migration barrier by setting an anti-PID modification layer, utilizing the high insulation of nano-alumina to inhibit active ion migration, and silicon dioxide to enhance the adhesion between the film layer and the copper mesh and transparent substrate, thus suppressing the occurrence of PID. Through the use of transparent materials and a multi-layer composite structure design, the high conductivity of copper and the light transmittance of transparent materials are synergistically utilized. The triple protection design of the anti-PID modification layer, transparent conductive auxiliary layer, and encapsulation protective layer ensures that the lifespan of the composite copper mesh matches that of photovoltaic modules, reducing subsequent maintenance costs. The preparation method of this invention significantly reduces material costs by using copper instead of indium, and employs mature preparation processes such as photolithography and sol-gel methods. Furthermore, the encapsulation protective layer is compatible with existing photovoltaic module production lines, eliminating the need for large-scale equipment modifications. The composite copper mesh of this invention can be adapted to rigid crystalline silicon photovoltaic modules, as well as flexible thin-film photovoltaic modules and BIPV transparent curtain walls, meeting the light transmittance and anti-PID requirements of different scenarios. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the transparent conductive anti-PID composite copper mesh structure of the present invention; The labels in the attached figures are as follows: 1--Encapsulation protective layer, 2--Transparent conductive auxiliary layer, 3--Anti-PID modification layer, 4--Metal mesh copper transparent electrode layer, 5--Transparent substrate. Detailed Implementation

[0019] This invention discloses a transparent conductive anti-PID composite copper mesh and its preparation method. By blocking ion migration with an anti-PID modified layer, optimizing conductivity and stability with a transparent conductive auxiliary layer, and isolating environmental corrosion with an encapsulation protective layer, the photovoltaic module achieves long life and high reliability.

[0020] The technical solutions of the embodiments of the present invention will be clearly and thoroughly described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Please see Figure 1 Figure 1 is a schematic diagram of the hierarchical structure of the transparent conductive anti-PID composite copper mesh of the present invention. This schematic diagram is only used to clearly show the top-to-bottom arrangement order of each functional layer and the interlayer connection relationship. The thickness ratio, size, and shape outline of each layer in the figure are simplified schematic drawings and do not constitute a limitation on the specific structural dimensions, proportions, and morphology of the present invention. The thickness and size of each layer in the actual product can be adaptively adjusted according to the application scenario requirements. The present invention provides a transparent conductive anti-PID composite copper mesh, which includes, from top to bottom, an encapsulation protective layer 1, a transparent conductive auxiliary layer 2, an anti-PID modification layer 3, a metal mesh copper transparent electrode layer 4, and a transparent substrate 5. The metal mesh copper transparent electrode layer 4 is formed on the transparent substrate 5. The anti-PID modification layer 3 covers the surface and mesh gaps of the metal mesh copper transparent electrode layer 4. The transparent conductive auxiliary layer 2 is deposited on the anti-PID modification layer 3. The encapsulation protective layer 1 covers the transparent conductive auxiliary layer 2.

[0022] In this embodiment of the invention, the layers are arranged from top to bottom. The transparent substrate 5 is made of transparent flexible or rigid material to provide mechanical support for the entire structure and ensure good optical transmittance. The metal mesh copper transparent electrode layer 4 can be fabricated on the transparent substrate 5 using photolithography micro-nano processing. Its linewidth, spacing, and thickness are optimized according to actual requirements such as the target operating frequency band and control precision. The anti-PID modification layer 3 covers the surface and mesh gaps of the metal mesh copper transparent electrode layer 4, achieving full-coverage protection for the copper electrode. Potential-induced degradation (PID) is a performance degradation problem of metal electrodes in photovoltaic, display, and other applications caused by potential difference and moisture erosion. Although copper electrodes have high conductivity and lower cost than silver electrodes, their anti-PID ability is weak. This structure, through the precise layout of the anti-PID modification layer 3, can effectively block the intrusion of external moisture and ions, inhibit the oxidation, migration, and interface charge accumulation of the copper electrode, and significantly improve the long-term service stability of the composite electrode under high temperature, high humidity, and high potential difference conditions. Furthermore, this embodiment employs a dual-layer conductive design combining a metal mesh copper electrode and a transparent conductive auxiliary layer 2 to achieve a balance between conductivity and light transmittance. The bottom metal mesh copper electrode provides a highly conductive path; copper's conductivity is superior to traditional transparent conductive materials such as ITO, and the mesh structure can reduce the metal content to improve light transmittance while ensuring conductivity. The upper transparent conductive auxiliary layer 2 fills the conductive gaps between the metal mesh, avoiding the problem of uneven sheet resistance caused by mesh gaps. Simultaneously, the auxiliary layer itself is transparent and will not significantly reduce the overall light transmittance. Compared to a single metal mesh electrode or a single transparent conductive film, this composite structure exhibits superior sheet resistance uniformity, making it suitable for applications requiring high conductivity uniformity, such as touchscreens and transparent electrodes for photovoltaic modules. The top encapsulation protective layer 1 provides physical protection, effectively resisting external mechanical scratches, chemical corrosion, ultraviolet radiation, and other destructive factors, preventing damage to the internal conductive layer and anti-PID layer, and effectively extending the service life of the composite copper mesh.

[0023] In this embodiment, the interfaces between the layers are clear, and the fabrication process is compatible with existing deposition, coating, and photolithography processes: the metal mesh copper electrode can be formed on the transparent substrate 5 through photolithography etching, printing, and other processes; the anti-PID modification layer 3 can cover the electrodes and gaps through coating, evaporation, and other methods; the transparent conductive auxiliary layer 2 and the encapsulation protective layer 1 can be deposited sequentially through sputtering, coating, and other processes. This layout does not require the introduction of complex special equipment and has good compatibility with existing equipment.

[0024] Preferably, the anti-PID modification layer 3 is a nano-alumina-silica composite film, with a mass ratio of nano-alumina to silica of 3:1 to 5:1 and a thickness of 50 to 100 nm. In this embodiment, the anti-PID modification layer 3 is formed on the transparent substrate 5 of the copper mesh body and the mesh gaps using a sol-gel method or atomic layer deposition (ALD) process to form a uniform covering layer. The material of the anti-PID modification layer 3 is a nano-alumina (Al2O3)-silica (SiO2) composite film, wherein the mass ratio of Al2O3 to SiO2 is 3:1 to 5:1 and the thickness is 50 to 100 nm. Through this setting, the high insulation of Al2O3 in the anti-PID modification layer 3 can block the migration of active ions, and SiO2 can improve the adhesion between the film layer and the copper mesh and the transparent substrate 5. Moreover, the visible light transmittance of the film layer is >98%, which does not affect light transmission.

[0025] Preferably, the transparent conductive auxiliary layer 2 is aluminum-doped zinc oxide or reduced graphene oxide, with a thickness of 20-50 nm. In this embodiment, the transparent conductive auxiliary layer 2 is deposited on the surface of the anti-PID modification layer 3, and is a thin transparent conductive material layer, specifically aluminum-doped zinc oxide (AZO) or reduced graphene oxide (rGO), with a thickness of 20-50 nm. This layer can fill the conductive gaps in the copper mesh, making the overall sheet resistance of the composite copper mesh <10 Ω / □. At the same time, the chemical stability of AZO or rGO can enhance the oxidation resistance of the copper mesh, forming a "double protection" with the anti-PID modification layer 3.

[0026] Preferably, the encapsulation protective layer 1 is an ethylene-vinyl acetate copolymer or a polyolefin elastomer with a thickness of 200-300 μm. In this embodiment, the encapsulation protective layer 1 uses a transparent insulating material compatible with photovoltaic modules, specifically an ethylene-vinyl acetate copolymer (EVA) or polyolefin elastomer (POE) film with a thickness of 200-300 μm; it is laminated with the transparent conductive auxiliary layer 2 to prevent the composite copper mesh from being corroded by external moisture and dust, and it is compatible with the traditional encapsulation process of photovoltaic modules without the need for additional production line modifications.

[0027] Preferably, the transparent substrate 5 is any one of polyimide, polyethylene terephthalate, or quartz glass. In this embodiment, the polyimide (PI) substrate has the characteristics of high temperature resistance, chemical corrosion resistance, high mechanical strength, and excellent flexibility. On the one hand, its high temperature resistance is compatible with subsequent high-temperature preparation processes such as photolithography etching and coating of the metal mesh copper electrode, avoiding deformation, yellowing, or failure of the substrate during processing; on the other hand, its flexibility can meet the bending and folding requirements of flexible display panels, wearable device electrodes, flexible photovoltaic modules, and other scenarios, solving the technical pain point that traditional rigid substrates cannot adapt to flexible working conditions. The advantages of polyethylene terephthalate (PET) substrate are low cost, high light transmittance, convenient processing and molding, and strong industrial mass production capability. PET is a mature civilian-use transparent polymer material, with readily available raw materials and simple preparation processes, which can significantly reduce the overall manufacturing cost of composite copper mesh. At the same time, its visible light transmittance can reach more than 90%, which can meet the light transmittance requirements of popular scenarios such as touch screens, ordinary photovoltaic modules, and liquid crystal displays, balancing performance and economy. Quartz glass substrates possess ultra-high light transmittance, resistance to extreme high temperatures, excellent chemical stability, and high surface flatness. They are suitable for high-end applications with stringent requirements for light transmittance and environmental tolerance, such as electrodes for high-end optical instruments, electrodes for ultraviolet detection equipment, and photovoltaic modules operating under high-temperature conditions. Their high flatness ensures the fabrication precision of the metal mesh copper electrodes, avoiding problems such as uneven mesh linewidth and surface resistivity fluctuations caused by substrate warping. The optional design of multiple substrate materials in this embodiment allows this composite copper mesh technology to transcend the limitations of a single application scenario, enabling flexible selection based on customer needs. For example, PI or PET are preferred in flexible terminal applications, while quartz glass is used in high-end optics and high-temperature industrial applications.

[0028] A method for preparing a transparent conductive anti-PID composite copper mesh includes the following steps: Step S1: Select a transparent substrate material and clean and dry its surface; Step S2: Form a metal mesh copper transparent electrode layer on a transparent substrate using a photolithography etching process; Step S3: Using the sol-gel method or atomic layer deposition process, deposit a nano-alumina-silica composite film on the surface of the metal mesh copper transparent electrode layer and the transparent substrate at the mesh gaps to form an anti-PID modification layer; Step S4: Prepare a transparent conductive auxiliary layer on the anti-PID modified layer by a deposition process; Step S5: The ethylene-vinyl acetate copolymer or polyolefin elastomer is laminated with the transparent conductive auxiliary layer to form a protective layer for clothing, resulting in a transparent conductive anti-PID composite copper mesh.

[0029] In this preparation method, the process flow adopts the steps of substrate pretreatment → electrode forming → anti-PID layer deposition → conductive auxiliary layer preparation → encapsulation protection, corresponding to the top-to-bottom layered structure of the product.

[0030] Specifically, the substrate cleaning and drying process in step S1 can remove impurities such as oil, dust, and oxides from the substrate surface, improve the interfacial bonding between the subsequent copper electrode and the substrate, and avoid problems such as electrode detachment and abnormal resistance caused by interfacial defects.

[0031] Step S2 uses photolithography for the copper mesh electrode. This process is a mature technology for precision metal patterning, which can accurately control key parameters such as line width, spacing, and thickness of the copper mesh to ensure the conductivity uniformity and transmittance balance of the electrode.

[0032] Step S3 uses either the sol-gel method or atomic layer deposition to deposit a nano-alumina-silica composite film. Both processes can achieve ultra-thin, uniform, and pinhole-free film coverage, especially able to completely fill the gaps in the copper grid and cover the electrode surface, solving the technical pain point of traditional coating processes that it is difficult to form a uniform coating in tiny gaps. The nano-alumina-silica composite film has both high density and corrosion resistance, which can maximize the anti-PID function.

[0033] The deposition processes used in step S4 (such as magnetron sputtering, vacuum evaporation, coating, etc.) are all mature industrial processes in the field of electronic thin films. They can be seamlessly integrated with the photolithography in step S2, the sol-gel / atomic layer deposition in step S3, and the lamination process in step S5, without the need to introduce special equipment or adjust existing production line parameters. At the same time, the deposition process can precisely control the thickness and uniformity of the auxiliary layer, which is conducive to achieving stable control of product yield and reducing the cost of large-scale production.

[0034] Step S5 uses a lamination process to composite an ethylene-vinyl acetate copolymer (EVA) or polyolefin elastomer (POE) encapsulation layer. The lamination process can achieve a tight fit between the encapsulation layer and the conductive auxiliary layer. Moreover, EVA / POE materials have excellent light transmittance, weather resistance and adhesion, and can form a bubble-free and wrinkle-free encapsulation protective layer.

[0035] The photolithography, sol-gel, atomic layer deposition, and lamination processes involved in this preparation method and process are all standardized mass production processes in the fields of electronic materials, photovoltaic modules, and display panels. There is no need to introduce new special equipment, and enterprises can directly use existing production lines for technology transfer, which can significantly reduce equipment investment costs. At the same time, the parameter control and quality inspection systems of each process are mature, which can ensure stable product yield and is suitable for large-scale industrial production.

[0036] Preferably, in step S4, a transparent conductive auxiliary layer is prepared by a deposition process. When the transparent conductive auxiliary layer is aluminum-doped zinc oxide, a magnetron sputtering process is used, with a sputtering power of 100~200W and a working pressure of 0.5~1.5Pa, performed in an argon atmosphere. In this step, the magnetron sputtering process in an argon atmosphere can achieve uniform sputtering deposition of the AZO target material, avoiding problems such as excessive oxygen defects or uneven doping. The parameter range of 100~200W sputtering power combined with a working pressure of 0.5~1.5Pa can precisely control the crystallinity and thickness of the AZO film, ensuring uniform aluminum ion doping to improve conductivity while avoiding excessive film thickness or crystal defects that lead to a decrease in light transmittance, thus achieving a balance between conductivity and light transmittance.

[0037] Preferably, in step S4, a transparent conductive auxiliary layer is prepared by a deposition process. When the transparent conductive auxiliary layer is reduced graphene oxide, a spray thermal reduction method is used to spray the graphene oxide dispersion onto the anti-PID modified layer, followed by thermal reduction in an inert atmosphere at 300~500℃. In this step, the spraying process allows the graphene oxide dispersion to be uniformly spread on the surface of the anti-PID modified layer and to completely penetrate into the gaps between the copper grids. After thermal reduction, a continuous rGO conductive film is formed, eliminating the conductive blind spots in the grid gaps. Compared with directional deposition processes such as magnetron sputtering, the spray thermal reduction method has stronger coverage of complex surfaces and ensures conductivity uniformity.

[0038] Preferably, in step S1, the cleaning method is ultrasonic cleaning or plasma cleaning, the drying temperature is 80-100℃, and the drying time is 20-30 minutes. In this step, ultrasonic cleaning efficiently removes physical impurities such as oil and dust from the surface of polymer substrates such as polyimide and PET through cavitation effect; plasma cleaning can remove organic residues from the surface of quartz glass or polymer substrates and activate the substrate surface, improving the interfacial adhesion between the subsequent copper electrode and the substrate. The two cleaning methods can be flexibly selected to adapt to the pretreatment requirements of different substrate materials, avoiding problems such as electrode detachment and interlayer peeling caused by impurities on the substrate surface.

[0039] Preferably, in step S5, the lamination process is carried out at a temperature of 130-150°C, a pressure of 0.5-1 MPa, a vacuum degree of <1 Pa, and a time of 10-20 min. In this step, the lamination temperature of 130-150°C allows the ethylene-vinyl acetate copolymer (EVA) or polyolefin elastomer (POE) encapsulation material to fully melt, while the pressure of 0.5-1 MPa ensures that the molten encapsulation material adheres tightly to the surface of the transparent conductive auxiliary layer, simultaneously filling the tiny gaps in the composite structure to form a bubble-free and wrinkle-free sealed encapsulation protective layer. This parameter range avoids the problems of excessively high temperatures causing aging and yellowing of the encapsulation material, excessively low temperatures resulting in insufficient melting, and excessive pressure damaging the internal functional layers.

[0040] The advantages and beneficial effects of this invention are as follows: This invention constructs an ion migration barrier by setting an anti-PID modification layer, utilizing the high insulation of nano-alumina to inhibit active ion migration, and silicon dioxide to enhance the adhesion between the film layer and the copper mesh and transparent substrate, thus suppressing the occurrence of PID. Through the use of transparent materials and a multi-layer composite structure design, the high conductivity of copper and the light transmittance of transparent materials are synergistically utilized. The triple protection design of the anti-PID modification layer, transparent conductive auxiliary layer, and encapsulation protective layer ensures that the lifespan of the composite copper mesh matches that of photovoltaic modules, reducing subsequent maintenance costs. The preparation method of this invention significantly reduces material costs by using copper instead of indium, and employs mature preparation processes such as photolithography and sol-gel methods. Furthermore, the encapsulation protective layer is compatible with existing photovoltaic module production lines, eliminating the need for large-scale equipment modifications. The composite copper mesh of this invention can be adapted to rigid crystalline silicon photovoltaic modules, as well as flexible thin-film photovoltaic modules and BIPV transparent curtain walls, meeting the light transmittance and anti-PID requirements of different scenarios.

[0041] The transparent heating film with composite conductive layer provided by the present invention has been described in detail above. For those skilled in the art, there will be changes in specific implementation methods and application scope based on the ideas of the embodiments of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A transparent conductive anti-PID composite copper mesh, characterized in that, From top to bottom, the structure includes an encapsulation protective layer (1), a transparent conductive auxiliary layer (2), an anti-PID modification layer (3), a metal mesh copper transparent electrode layer (4), and a transparent substrate (5); the metal mesh copper transparent electrode layer is formed on the transparent substrate; the anti-PID modification layer covers the surface and mesh gaps of the metal mesh copper transparent electrode layer; and the transparent conductive auxiliary layer is deposited on the anti-PID modification layer. The encapsulation protective layer covers the transparent conductive auxiliary layer.

2. The transparent conductive anti-PID composite copper mesh according to claim 1, characterized in that, The anti-PID modified layer is a nano-alumina-silica composite film with a mass ratio of nano-alumina to silica of 3:1 to 5:1 and a thickness of 50 to 100 nm.

3. The transparent conductive anti-PID composite copper mesh according to claim 1, characterized in that, The transparent conductive auxiliary layer is aluminum-doped zinc oxide or reduced graphene oxide, with a thickness of 20~50nm.

4. The transparent conductive anti-PID composite copper mesh according to claim 1, characterized in that, The encapsulation protective layer is an ethylene-vinyl acetate copolymer or a polyolefin elastomer with a thickness of 200~300μm.

5. The transparent conductive anti-PID composite copper mesh according to claim 1, characterized in that, The transparent substrate is any one of polyimide, polyethylene terephthalate, or quartz glass.

6. A method for preparing a transparent conductive anti-PID composite copper mesh, used to manufacture the transparent conductive anti-PID composite copper mesh according to any one of claims 1 to 5, characterized in that, Includes the following steps: Step S1: Select a transparent substrate material and clean and dry its surface; Step S2: Form a metal mesh copper transparent electrode layer on a transparent substrate using a photolithography etching process; Step S3: Using the sol-gel method or atomic layer deposition process, deposit a nano-alumina-silica composite film on the surface of the metal mesh copper transparent electrode layer and the transparent substrate at the mesh gaps to form an anti-PID modification layer; Step S4: Prepare a transparent conductive auxiliary layer on the anti-PID modified layer by a deposition process; Step S5: The ethylene-vinyl acetate copolymer or polyolefin elastomer is laminated with the transparent conductive auxiliary layer to form a protective layer for clothing, resulting in a transparent conductive anti-PID composite copper mesh.

7. The method for preparing the transparent conductive anti-PID composite copper mesh according to claim 6, characterized in that, In step S4, a transparent conductive auxiliary layer is prepared by deposition process. When the transparent conductive auxiliary layer is aluminum-doped zinc oxide, a magnetron sputtering process is adopted, with a sputtering power of 100~200W and a working gas pressure of 0.5~1.5Pa, and the process is carried out in an argon atmosphere.

8. The method for preparing the transparent conductive anti-PID composite copper mesh according to claim 6, characterized in that, In step S4, a transparent conductive auxiliary layer is prepared by deposition process. When the transparent conductive auxiliary layer is reduced graphene oxide, the graphene oxide dispersion is sprayed onto the anti-PID modified layer by spraying thermal reduction method, and then thermal reduction is carried out in an inert atmosphere at 300~500℃.

9. The method for preparing the transparent conductive anti-PID composite copper mesh according to claim 6, characterized in that, In step S1, the cleaning method is ultrasonic cleaning or plasma cleaning, the drying temperature is 80-100℃, and the drying time is 20-30 min.

10. The method for preparing the transparent conductive anti-PID composite copper mesh according to claim 6, characterized in that, In step S5, the lamination process is carried out at a temperature of 130~150℃, a pressure of 0.5~1MPa, a vacuum degree of <1Pa, and a time of 10~20min.

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