Preparation method of cadmium telluride thin film solar OLED electronic display screen

Abstract

The invention discloses a preparation method of a cadmium telluride thin film solar OLED electronic display screen. The electronic display screen sequentially comprises a lower packaging layer, a cadmium telluride coating power generation layer, a TCO conductive layer, a substrate, an ITO anode, an HTL hole transport layer, an EML light-emitting layer, an ETL electron transport layer, a cathode and an upper packaging layer from bottom to top. The cadmium telluride thin film is adopted as the power generation layer, the weak light power generation performance of the cadmium telluride thin film is far better than that of a traditional silicon-based solar cell, and the photoelectric conversion efficiency can reach 8%-10% (only 4%-5% of a traditional amorphous silicon cell and only 3%-4% of a crystalline silicon cell) under the weak light environment such as indoor light (500 lux) and tree shade; and the efficiency can reach 12 to 15 percent under the AM1.5 standard light intensity (1000lux). By recycling sunlight and residual light (the utilization rate is larger than or equal to 30%) of OLED self-illumination, continuous extra electric power can be provided for mobile equipment, according to actual measurement, the daily average extra power supply amount of a smart phone carrying the display screen can reach 200-300 mAh, the equipment cruising ability is improved by 20-30%, the daily average charging frequency of a user can be reduced by more than one time, and electric quantity anxiety is thoroughly relieved.

Description

Technical Field

[0001] This invention relates to the field of OLED electronic display technology, specifically to a method for preparing a cadmium telluride thin-film solar OLED electronic display screen. Background Technology

[0002] With the rapid development of mobile internet and IoT technologies, the number of mobile electronic devices worldwide continues to climb. According to IDC's 2024 Worldwide Mobile Device Market Report, smartphone shipments alone exceeded 1.2 billion units annually. Adding tablets, smartwatches, and portable VR / AR devices, the total number of mobile terminals worldwide has surpassed 3 billion units. These devices generally use OLED displays as the core of human-computer interaction. With its advantages of self-illumination, high color gamut, high contrast, fast response time, and strong flexibility, OLED has become the preferred display solution for high-end mobile devices.

[0003] However, the battery life of mobile electronic devices remains a pain point for the industry and a core demand of users. Currently, the core power source for mobile devices is still lithium batteries, but lithium batteries have an irreversible capacity decay characteristic: according to industry test data, after 300-500 complete charge-discharge cycles, the capacity of a lithium battery will decay to less than 80% of its initial value; after 1-2 years of use, the actual battery life is only 60%-70% of that of a new device, causing users to frequently face "battery anxiety." Data shows that more than 75% of smartphone users charge their devices ≥1 times a day, and 30% of users charge their devices ≥2 times a day. Moreover, in scenarios without external power sources, such as outdoors or commuting, the probability of device power failure is as high as 40%, seriously affecting the user experience.

[0004] More importantly, existing OLED electronic displays only have a single image display function and fail to effectively utilize their own and the environment's energy. Although some manufacturers have attempted to integrate solar panels on the back of the devices, there are many drawbacks: First, they use traditional crystalline silicon solar cells, which have extremely low light transmittance (≤30%), making them unsuitable for integration with the display; second, their low-light power generation performance is poor, with a power generation efficiency of less than 3% in low-light environments such as indoor lighting and shade (below 500 lux), making it difficult to meet actual power supply needs; third, their large size and weight compromise the portability and appearance of the devices, failing to achieve the integration of "display-power generation". Summary of the Invention

[0005] The purpose of this invention is to address the shortcomings of existing technologies by proposing a method for fabricating a cadmium telluride thin-film solar OLED electronic display screen. The electronic display screen, from bottom to top, comprises a lower encapsulation layer, a cadmium telluride coated power-generating layer, a TCO conductive layer, a substrate, an ITO anode, an HTL hole transport layer, an EML light-emitting layer, an ETL electron transport layer, a cathode, and an upper encapsulation layer. The fabrication steps include: (1) Substrate preparation: Tempered TCO glass with a thickness of 1 mm was selected as the substrate; (2) Preparation of cadmium telluride coating power generation layer: After cleaning and testing the tempered TCO glass, a CdTe power generation PN junction layer is deposited by magnetron sputtering to form a cadmium telluride coating power generation layer. (3) TCO conductive layer composite: The substrate coated with cadmium telluride film power generation layer is vacuum bonded to the TCO conductive layer; (4) Cadmium chloride coating: The composite front glass is immersed in cadmium chloride solution for immersion coating; (5) Activation cleaning: The front glass panel after coating is activated and then cleaned; (6) Laser etching segmentation: The cadmium telluride coating power generation layer is etched into multiple sub-cells using a laser device, filling the etched gaps and removing excess film at the edges of the cells; (7) Performance testing: Testing the power generation capacity and internal defects of the etched substrate; (8) Lower encapsulation layer bonding: The substrate that has passed the performance test is bonded to the high borosilicate glass through a lamination process to form the lower encapsulation layer, and a metal electrode interface is reserved; (9) ITO anode preparation: After pretreatment of the substrate to which the lower encapsulation layer is bonded, an ITO anode is formed on the surface of the TCO conductive layer by vacuum evaporation or solution coating. (10) Preparation of HTL hole transport layer: An HTL hole transport layer is formed on the surface of the ITO anode by vacuum evaporation or solution coating. (11) EML light-emitting layer preparation: An EML light-emitting layer is formed on the surface of the HTL hole transport layer by vacuum evaporation or solution coating. (12) Pixel definition: The EML light-emitting layer is processed using photolithography, etching or high-precision metal mask to define the light-emitting area with pixel-level precision; (13) Preparation of ETL electron transport layer: An ETL electron transport layer is formed on the surface of the EML light-emitting layer by vacuum evaporation; (14) Cathode preparation: A cathode is formed on the surface of the ETL electron transport layer by vacuum evaporation or solution coating. (15) Upper encapsulation layer encapsulation: The prepared display layer is combined with borosilicate glass, sealant and desiccant, and sealed by hot roller encapsulation or vacuum encapsulation to form the upper encapsulation layer and obtain the target electronic display screen.

[0006] The thickness of the cadmium telluride coating power generation layer mentioned in the steps is 500-800nm, and the photoelectric conversion efficiency is ≥12% under AM1.5 standard light intensity and ≥8% under 500lux weak light environment.

[0007] The vacuum bonding pressure in the steps is 0.1-0.2MPa, the bonding temperature is 80-100℃, and the interfacial contact resistance between the TCO conductive layer and the cadmium telluride coating power generation layer after bonding is ≤0.05Ω.

[0008] The concentration of the cadmium chloride solution in the steps is 5-15 wt%, the immersion and coating time is 3-5 min, and the thickness of the cadmium chloride coating formed after coating is 10-20 nm.

[0009] The laser device mentioned in the steps is an ultraviolet laser with a wavelength of 355nm, an etching depth of 300-500nm, and a multi-cell pitch of 1-2mm.

[0010] The ITO anode mentioned in the steps has a thickness of 100-150nm, a transmittance of ≥88%, and a sheet resistance of ≤5Ω / □.

[0011] The HTL hole transport layer mentioned in the steps is made of PEDOT:PSS or a polythiophene derivative, with a thickness of 50-80 nm and a hole mobility ≥1×10⁻ 4 cm² / V・s.

[0012] The material of the EML luminescent layer in step (11) is selected from one or more of polyfluorene derivatives, CdSe / ZnS quantum dots, and iridium complexes, with a thickness of 30-60nm, a brightness of ≥500cd / m², and a color gamut coverage of ≥95% (NTSC standard).

[0013] The ETL electron transport layer in step (13) is made of TPBi or BPhen, with a thickness of 20-40 nm and an electron mobility ≥5×10⁻ 5 cm² / V・s; The cathode material in step (14) is silver or aluminum, with a thickness of 150-200 nm and a conductivity ≥1×10⁻⁶. 5 S / cm, adhesion ≥5B (cross-cut adhesion test).

[0014] The high borosilicate glass described in steps (15) has a light transmittance of ≥92%, the sealant described in step (15) is butyl rubber, and the desiccant is a molecular sieve desiccant.

[0015] The beneficial effects of this invention are as follows: 1. Excellent low-light power generation efficiency and significantly improved battery life: This invention uses cadmium telluride thin film as the power generation layer, and its low-light power generation performance far exceeds that of traditional silicon-based solar cells—in low-light environments such as indoor lighting (500 lux) and shade, the photoelectric conversion efficiency can reach 8-10% (traditional amorphous silicon cells are only 4-5%, and crystalline silicon cells are only 3-4%); under AM1.5 standard light intensity (1000 lux), the efficiency can reach 12-15%. By recovering sunlight and the residual light emitted by OLED self-emission (utilization rate ≥30%), it can provide continuous additional power for mobile devices. According to actual tests, smartphones equipped with the display of this invention can provide an average daily additional power supply of 200-300mAh, improve device battery life by 20-30%, and reduce the number of times users charge per day by more than one, completely alleviating battery anxiety.

[0016] 2. Slow down battery degradation and extend equipment life: Additional solar power reduces the number of charge-discharge cycles of lithium batteries. Calculated by reducing one full charge-discharge cycle per day, the annual charge-discharge cycle count of lithium batteries can be reduced from 365 to below 180, slowing down the rate of battery capacity degradation by more than 50%, and extending the lifespan of lithium batteries from 1.5-2 years to 3-4 years, indirectly reducing the frequency of equipment replacement and the amount of electronic waste generated.

[0017] 3. Outstanding energy-saving and environmental benefits: According to calculations, a single smartphone equipped with the display screen of this invention can save approximately 10-15 kWh of traditional electricity per year, corresponding to a reduction of 8-12 kg of carbon dioxide emissions. If 1 billion mobile devices worldwide adopt this technology, it can save 100-150 TWh of electricity per year and reduce carbon emissions by 80-120 million tons, accounting for approximately 50-75% of the total carbon emissions from global mobile devices, which is of great significance to the improvement of the ecological environment.

[0018] 4. Integrated display and power generation with strong compatibility: This invention deeply integrates the cadmium telluride coated power generation layer with the OLED display layer, optimizing the light transmittance of each layer to over 85%. The final display screen has an overall light transmittance of ≥80%, a display brightness of ≥500cd / m², and a color gamut coverage of ≥95%, without affecting the display performance of the OLED. At the same time, the manufacturing process is highly compatible with existing OLED production lines, requiring no large-scale equipment modification. Only additional modules such as power generation layer preparation and laser etching are needed, resulting in low industrialization and promotion costs.

[0019] 5. High device stability and significantly extended lifespan: The crystal quality of the power generation layer is optimized through "cadmium chloride coating-activation treatment," combined with a high-barrier encapsulating adhesive and molecular sieve desiccant design, effectively preventing water and oxygen penetration and dust contamination. Actual testing shows that the display screen of this invention has a lifespan of 5-8 years under normal temperature and humidity conditions, and still reaches 3-5 years under high temperature and high humidity (60℃ / 90%RH) conditions, far exceeding the lifespan of traditional OLED displays (3-5 years under normal temperature and humidity, 1-2 years under high temperature and high humidity).

[0020] 6. Compact structure and wide adaptability: The present invention adopts an integrated design, with an overall display thickness of only 4-5mm (including upper and lower encapsulation glass), which is basically the same as the thickness of traditional OLED displays (3-4mm). The weight increase is ≤10g, which does not affect the portability and appearance design of the device. It can be widely adapted to various mobile terminals such as mobile phones, tablets, smartwatches, and portable VR / AR devices, and the application scenarios cover multiple scenarios such as daily commuting, outdoor work, and travel. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of the present invention.

[0022] In the diagram: 1. Upper encapsulation layer, 2. ETL electron transport layer, 3. EML light-emitting layer, 4. ITO anode, 5. TCO conductive layer, 6. Cathode, 7. HTL hole transport layer, 8. Substrate, 9. Cadmium telluride coated power generation layer, 10. Lower encapsulation layer. Detailed Implementation

[0023] The accompanying drawings are for illustrative purposes only and should not be construed as limiting the scope of this patent. To better illustrate this embodiment, some components in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0024] Example 1, as shown in the figure: A method for preparing a cadmium telluride thin-film solar OLED electronic display screen, the specific steps of which are as follows: 1. Preparation of substrate 8: Tempered TCO glass with a thickness of 1mm was selected as substrate 8. Its surface flatness was tested to be 0.08μm, light transmittance was 91%, and tensile strength was 520MPa, which met the requirements. 2. Preparation of Cadmium Telluride Coated Power Generation Layer 9: The layer was ultrasonically cleaned at 50 kHz for 15 min, then cleaned with argon plasma (120 W power, 6 min), and dried at 80℃ for 20 min. A CdTe power generation PN junction layer was deposited by magnetron sputtering to form Cadmium Telluride coated power generation layer 9 with a thickness of 600 nm. Its efficiency was 13.2% under AM1.5 light intensity and 8.5% under 500 lux low light intensity. 3. TCO conductive layer 5 composite: The substrate 8 and the TCO conductive layer 5 are vacuum bonded together at a pressure of 0.15MPa and a temperature of 90℃, with an interface contact resistance of 0.04Ω. 4. Cadmium chloride coating: Prepare a 10wt% cadmium chloride aqueous solution, immerse the front glass panel for 4 minutes to form a 15nm thick cadmium chloride coating. 5. Activation and cleaning: Activate at 180℃ under nitrogen atmosphere for 25 minutes, ultrasonically clean with deionized water at 40kHz for 8 minutes, and dry at 80℃ for 15 minutes. 6. Laser etching segmentation: 355nm ultraviolet laser (power 15W) is used for etching to a depth of 400nm and a sub-cell pitch of 1.5mm. Laser cladding is used to fill the gaps, and plasma etching (power 90W, time 4min) is used to remove the edge film layer. 7. Performance testing: The open circuit voltage is 0.85V, the short circuit current is 22mA / cm², the fill factor is 0.78, and the ultrasonic testing shows no obvious defects, thus the test is qualified. 8. Lamination of lower encapsulation layer 10: Lamination with 1mm high borosilicate glass (93% light transmittance) to form lower encapsulation layer 10, temperature 130℃, pressure 0.2MPa, time 25min; reserved copper alloy electrode, contact resistance 0.08Ω; 9. Preparation of ITO anode 4: Cleaning with 5wt% sodium hydroxide solution at 55℃ for 18 min, annealing at 320℃ for 1 h; vacuum evaporation of ITO to form ITO anode 4, vacuum degree 4×10⁻ 4 Pa, substrate temperature 90℃, thickness 120nm; tested transmittance 90%, sheet resistance 4Ω / □; 10. Preparation of HTL hole transport layer 7: HTL hole transport layer 7 was formed by vacuum evaporation of PEDOT:PSS at a vacuum degree of 4×10⁻ 4 Pa, substrate temperature 90℃, thickness 60nm; measured hole mobility 1.2×10⁻ 4 cm² / V・s; 11. Preparation of EML luminescent layer 3: EML luminescent layer 3 was formed by vacuum evaporation of CdSe / ZnS quantum dots at a vacuum degree of 8×10⁻ 5 Pa, substrate temperature 70℃, thickness 40nm; tested brightness 550cd / m², color gamut coverage 96%, luminous efficiency 65lm / W; 12. Pixel definition: High-precision FMM (aperture precision 4μm) is adopted, pixel size is 15μm, and pixel pitch is 4μm; 13. Preparation of ETL electron transport layer 2: ETL electron transport layer 2 is formed by vacuum evaporation of TPBi at a vacuum degree of 4×10⁻ 4 Pa, substrate temperature 55℃, thickness 30nm; measured electron mobility 6×10⁻ 5 cm² / V・s; 14. Preparation of cathode 6: Aluminum is vacuum-deposited to form cathode 6, with a vacuum degree of 4×10⁻ 4 Pa, substrate temperature 55℃, thickness 180nm; tested conductivity 1.2×10⁻⁶ 5 S / cm, adhesion test result: 5B (S / cm); 15. Encapsulation of upper encapsulation layer 1: Apply butyl sealant, insert molecular sieve desiccant, and use hot roller encapsulation (temperature 90℃, pressure 0.3MPa, speed 1.5m / min) to bond 1mm high borosilicate glass as upper encapsulation layer 1 to obtain the target product. Example

[0025] The difference between this embodiment and Embodiment 1 is that: 1. In step 4, the concentration of cadmium chloride solution is 8 wt%, the immersion time is 4 min, and the coating thickness is 12 nm; 2. In step 11, the luminescent material is a polyfluorene derivative, and an EML luminescent layer 3 is formed using inkjet printing technology. The pixel resolution is 350 PPI, the thickness is 50 nm, the tested brightness is 520 cd / m², and the color gamut coverage is 95%. 3. In step 15, a vacuum sealing method is used, with a vacuum degree of 8×10⁻ 4 Pa, heat preservation time 15 min.

[0026] The remaining steps and parameters are the same as in Example 1. The final product test showed that the low light power generation efficiency was 8.2% and the battery life was improved by 25%.

[0027] This invention proposes a compact method for fabricating a cadmium telluride thin-film solar OLED electronic display. 1. Excellent low-light power generation efficiency and significantly improved battery life: This invention uses a cadmium telluride thin film as the power generation layer, whose low-light power generation performance far surpasses that of traditional silicon-based solar cells—in low-light environments such as indoor lighting (500 lux) and shade, the photoelectric conversion efficiency can reach 8-10% (compared to only 4-5% for traditional amorphous silicon cells and only 3-4% for crystalline silicon cells); under AM1.5 standard light intensity (1000 lux), the efficiency can reach 12-15%. By recovering sunlight and the residual light emitted by the OLED (utilization rate ≥30%), it can provide continuous additional power to mobile devices. Actual measurements show that smartphones equipped with this invention's display can receive an average daily additional power supply of 200-300mAh, improving device battery life by 20-30%, reducing the number of daily charging cycles for users by more than one, and completely alleviating battery anxiety.

[0028] 2. Slow down battery degradation and extend equipment life: Additional solar power reduces the number of charge-discharge cycles of lithium batteries. Calculated by reducing one full charge-discharge cycle per day, the annual charge-discharge cycle count of lithium batteries can be reduced from 365 to below 180, slowing down the rate of battery capacity degradation by more than 50%, and extending the lifespan of lithium batteries from 1.5-2 years to 3-4 years, indirectly reducing the frequency of equipment replacement and the amount of electronic waste generated.

[0029] 3. Outstanding energy-saving and environmental benefits: According to calculations, a single smartphone equipped with the display screen of this invention can save approximately 10-15 kWh of traditional electricity per year, corresponding to a reduction of 8-12 kg of carbon dioxide emissions. If 1 billion mobile devices worldwide adopt this technology, it can save 100-150 TWh of electricity per year and reduce carbon emissions by 80-120 million tons, accounting for approximately 50-75% of the total carbon emissions from global mobile devices, which is of great significance to the improvement of the ecological environment.

[0030] 4. Integrated display and power generation with strong compatibility: This invention deeply integrates the cadmium telluride coated power generation layer 9 with the OLED display layer. The transmittance of each layer is optimized to over 85%, resulting in an overall transmittance of ≥80%, a brightness of ≥500cd / m², and a color gamut coverage of ≥95%, without affecting the display performance of the OLED. At the same time, the manufacturing process is highly compatible with existing OLED production lines, requiring no large-scale equipment modifications. Only additional modules such as power generation layer preparation and laser etching are needed, resulting in low industrialization costs.

[0031] 5. High device stability and significantly extended lifespan: The crystal quality of the power generation layer is optimized through "cadmium chloride coating-activation treatment," combined with a high-barrier encapsulating adhesive and molecular sieve desiccant design, effectively preventing water and oxygen penetration and dust contamination. Actual testing shows that the display screen of this invention has a lifespan of 5-8 years under normal temperature and humidity conditions, and still reaches 3-5 years under high temperature and high humidity (60℃ / 90%RH) conditions, far exceeding the lifespan of traditional OLED displays (3-5 years under normal temperature and humidity, 1-2 years under high temperature and high humidity).

[0032] 6. Compact structure and wide adaptability: The present invention adopts an integrated design, with an overall display thickness of only 4-5mm (including upper and lower encapsulation glass), which is basically the same as the thickness of traditional OLED displays (3-4mm). The weight increase is ≤10g, which does not affect the portability and appearance design of the device. It can be widely adapted to various mobile terminals such as mobile phones, tablets, smartwatches, and portable VR / AR devices, and the application scenarios cover multiple scenarios such as daily commuting, outdoor work, and travel.

[0033] Finally, it should be noted that the above embodiments were selected and described in detail to better illustrate the technical solution of this invention, and are not intended to limit the scope to the details shown. Modifications or equivalent substitutions made by those skilled in the art to the technical solution of this invention without departing from the spirit and scope of this invention should be covered within the scope of the claims of this invention.

Claims

1. A method for preparing a cadmium telluride thin-film solar OLED electronic display screen, characterized in that: The electronic display screen comprises, from bottom to top, a lower encapsulation layer (10), a cadmium telluride coated power generation layer (9), a TCO conductive layer (5), a substrate (8), an ITO anode (4), an HTL hole transport layer (7), an EML light-emitting layer (3), an ETL electron transport layer (2), a cathode (6), and an upper encapsulation layer (1). Its preparation steps include: (1) Substrate preparation: Select tempered TCO glass with a thickness of 1mm as the substrate (8); (2) Preparation of cadmium telluride coating power generation layer: After cleaning and testing the tempered TCO glass, CdTe power generation PN junction layer is deposited by magnetron sputtering to form cadmium telluride coating power generation layer (9). (3) TCO conductive layer composite: The substrate (8) coated with cadmium telluride film power generation layer (9) is vacuum bonded to the TCO conductive layer (5); (4) Cadmium chloride coating: The composite front glass is immersed in cadmium chloride solution for immersion coating; (5) Activation cleaning: The front glass panel after coating is activated and then cleaned; (6) Laser etching segmentation: The cadmium telluride coating power generation layer (9) is etched into multiple sub-cells by laser equipment, filling the etched gaps and removing excess film at the edge of the cell; (7) Performance testing: Testing the power generation capacity and internal defects of the etched substrate; (8) Lower encapsulation layer bonding: The substrate that has passed the performance test is bonded to the high borosilicate glass through a lamination process to form the lower encapsulation layer (10), and a metal electrode interface is reserved; (9) ITO anode preparation: After pretreatment of the substrate of the lower encapsulation layer (10), ITO anode (4) is formed on the surface of the TCO conductive layer (5) by vacuum evaporation or solution coating. (10) Preparation of HTL hole transport layer: HTL hole transport layer (7) is formed on the surface of ITO anode (4) by vacuum evaporation or solution coating. (11) EML light-emitting layer preparation: EML light-emitting layer (3) is formed on the surface of HTL hole transport layer (7) by vacuum evaporation or solution coating. (12) Pixel definition: The EML light-emitting layer (3) is processed by photolithography, etching or high-precision metal mask to define the light-emitting area with pixel-level precision; (13) Preparation of ETL electron transport layer: ETL electron transport layer (2) is formed on the surface of EML light-emitting layer (3) by vacuum evaporation. (14) Cathode preparation: A cathode (6) is formed on the surface of the ETL electron transport layer (2) by vacuum evaporation or solution coating. (15) Upper encapsulation layer encapsulation: The prepared display layer is combined with borosilicate glass, sealant and desiccant, and sealed by hot roller encapsulation or vacuum encapsulation to form the upper encapsulation layer (1) and obtain the target electronic display screen.

2. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The thickness of the cadmium telluride coating power generation layer (9) in step (2) is 500-800nm, and the photoelectric conversion efficiency is ≥12% under AM1.5 standard light intensity and ≥8% under 500 lux weak light environment.

3. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The vacuum bonding pressure in step (3) is 0.1-0.2MPa, the bonding temperature is 80-100℃, and the interface contact resistance between the TCO conductive layer (5) and the cadmium telluride coated power generation layer (9) after bonding is ≤0.05Ω.

4. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The concentration of the cadmium chloride solution in step (4) is 5-15 wt%, the soaking and coating time is 3-5 min, and the thickness of the cadmium chloride coating formed after coating is 10-20 nm.

5. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The laser device mentioned in step (6) is an ultraviolet laser with a wavelength of 355nm, an etching depth of 300-500nm, and a multi-cell pitch of 1-2mm.

6. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The thickness of the ITO anode (4) in step (9) is 100-150 nm, the transmittance is ≥88%, and the sheet resistance is ≤5Ω / □.

7. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The HTL hole transport layer (7) mentioned in step (10) is made of PEDOT:PSS or a polythiophene derivative, with a thickness of 50-80 nm and a hole mobility ≥1×10⁻ 4 cm² / V・s.

8. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The material of the EML luminescent layer (3) in step (11) is selected from one or more of polyfluorene derivatives, CdSe / ZnS quantum dots, and iridium complexes. The thickness is 30-60nm, the brightness is ≥500cd / m², and the color gamut coverage is ≥95% (NTSC standard).

9. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The ETL electron transport layer (2) mentioned in step (13) is made of TPBi or BPhen, with a thickness of 20-40 nm and an electron mobility ≥5×10⁻ 5 cm² / V・s; The cathode (6) mentioned in step (14) is made of silver or aluminum, with a thickness of 150-200 nm and a conductivity ≥1×10⁻⁶. 5 S / cm, adhesion ≥5B (cross-cut adhesion test).

10. The method for preparing a cadmium telluride thin-film solar OLED electronic display screen according to claim 1, characterized in that: The high borosilicate glass described in steps (8) and (15) has a light transmittance of ≥92%, the sealant described in step (15) is butyl rubber, and the desiccant is a molecular sieve desiccant.

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