Method for monitoring chuck ejector pin of single-chip phosphoric acid cleaning machine

Abstract

The invention discloses a monitoring method for a chuck thimble of a monolithic phosphoric acid cleaning machine. The monitoring method comprises the following monitoring steps: step 1, forming a first germanium-silicon thin film layer on a monitoring wafer; 2, clamping and fixing the monitoring wafer through a chuck ejector pin, and carrying out the first etching of the first germanium-silicon thin film layer through a phosphoric acid cleaning solution; and step 3, measuring the first etching amount of the first germanium-silicon thin film layer in the edge area of the monitoring wafer and the fluctuation range of the first etching amount. And step 4, judging the state of the chuck ejector pin: if the first etching amount is greater than a first set value or the fluctuation range of the first etching amount is greater than a second set value, judging that the chuck ejector pin is abnormal. And if the first etching amount is less than or equal to the first set value and the fluctuation range of the first etching amount is less than or equal to the second set value, judging that the chuck thimble is normal. The state of the chuck ejector pin can be accurately monitored, so that the replacement time point of the chuck ejector pin can be accurately determined, product sheet abnormity can be prevented, and the product yield is improved.

Description

Technical Field

[0001] This invention relates to semiconductor integrated circuit manufacturing equipment, and in particular to a method for monitoring the chuck pin of a monolithic phosphoric acid cleaning machine. Background Technology

[0002] In the process chamber of a single-wafer phosphoric acid cleaning machine, the wafer is placed face up on a rotatable platform with multiple chuck pins to fix its position. For example... Figure 1 The image shown is a top view of the interior of the process chamber of an existing single-plate phosphoric acid cleaning machine. The process chamber includes a rotatable platform structure 101, and multiple chuck pins 102 are arranged at equal angles around the periphery of the platform structure 101. Figure 1 The image shows six chuck pins 102, with a sector angle of 60 degrees between adjacent chuck pins 102. The chuck pins 102 have open and clamping states. In the open state, they facilitate the loading and unloading of wafers, such as monitoring wafers or product wafers; in the clamping state, they fix the wafer for easy rotation. The wafer rotation is driven by the rotation mechanism of the platform structure 101. During wafer rotation, the corresponding centrifugal force evenly distributes the cleaning solution, i.e., phosphoric acid, onto the wafer surface and ejects it.

[0003] As time goes by and the output increases, the chuck ejector pin 102 will experience some wear. Normally, a fixed time or a fixed output quantity is set for replacement. However, in actual production, it has been found that the product process often encounters abnormalities before the replacement time for the chuck ejector pin 102 has arrived. For example... Figure 2 The image shown is map 103, depicting the film thickness loss of inline product wafers after phosphoric acid cleaning following a chuck pin malfunction in an existing single-wafer phosphoric acid cleaning machine. Typically, the map shape mirrors the actual wafer shape, with a one-to-one correspondence between their coordinates. Therefore, the test data at the corresponding position on the map represents the test data at the same position on the actual wafer. Figure 2 In map 103, the area corresponding to the dashed circle 104 is the edge area of ​​the corresponding chuck ejector pin 102. It can be seen that the film thickness loss is relatively large in the area corresponding to the dashed circle 104. The reason for the large thickness loss is the influence of the chuck ejector pin abnormality.

[0004] Because phosphoric acid has a high etching rate on silicon nitride, current equipment monitoring methods typically use silicon nitride thin films as monitoring films to monitor the etching rate of phosphoric acid. However, using silicon nitride thin films as monitoring films cannot accurately monitor whether the buck pin is abnormal, and therefore cannot determine the buck pin replacement time. Figure 3The image shown is map 105, which shows the offline monitoring of the silicon nitride etching rate (ER) of the wafer when using silicon nitride thin film to monitor the chuck pin of a single-wafer phosphoric acid cleaning machine. As can be seen from map 105, the thickness of the silicon nitride thin film at the edge of the wafer is uniform and is independent of the position of the chuck pin 102. Therefore, it is not possible to determine the replacement time of the chuck pin 102 by using silicon nitride as a monitoring film. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a method for monitoring the chuck ejector pin of a single-piece phosphoric acid cleaning machine, which can accurately monitor the status of the chuck ejector pin and thus accurately determine the replacement time of the chuck ejector pin, thereby preventing product plate abnormalities and improving product yield.

[0006] To solve the above-mentioned technical problems, the monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine provided by the present invention includes the following monitoring steps:

[0007] Step 1: Provide a monitoring wafer and form a first germanium-silicon thin film layer on the monitoring wafer.

[0008] Step 2: The first germanium-silicon thin film layer is etched for the first time using the phosphoric acid cleaning solution. During the first etching, the monitoring wafer is clamped and fixed by the chuck pin.

[0009] Step 3: Measure the first etching amount and the fluctuation range of the first etching amount of the first germanium-silicon thin film layer in the edge region of the monitored wafer.

[0010] Step 4: Determine the state of the chuck ejector pin, including:

[0011] If the first etching amount is greater than the first set value or the fluctuation range of the first etching amount is greater than the second set value, then the chuck ejector pin is determined to be abnormal.

[0012] If the first etching amount is less than or equal to the first set value and the fluctuation range of the first etching amount is less than or equal to the second set value, then the chuck ejector pin is determined to be normal.

[0013] A further improvement is that the germanium concentration of the first germanium-silicon thin film layer is 35% to 45%.

[0014] A further improvement is that the germanium concentration of the first germanium-silicon thin film layer is 40%.

[0015] A further improvement is that the etching time for the first etching is 180s to 240s.

[0016] A further improvement is that, during the first etching, the monitored wafer rotates at a speed of 300 rpm to 400 rpm.

[0017] A further improvement is that when the chuck ejector pin is determined to be abnormal, the single-piece phosphoric acid cleaning machine stops running and replaces the chuck ejector pin.

[0018] A further improvement is that when the chuck ejector pin is determined to be normal, the single-piece phosphoric acid cleaning machine will continue to operate normally.

[0019] A further improvement is that, prior to the first etching in step two, the process further includes:

[0020] The surface of the first germanium-silicon thin film layer was pretreated with hydrofluoric acid.

[0021] A further improvement is that, in step one, the number of monitored wafers is more than one.

[0022] A further improvement is that the monitoring steps are performed once a day or once every few days.

[0023] A further improvement is that the first set value is obtained by collecting multiple first etching amounts and performing statistical analysis.

[0024] The second set value is obtained by collecting and statistically analyzing the fluctuation ranges of multiple first etching amounts.

[0025] A further improvement is that the first set value is

[0026] The second setting value is

[0027] A further improvement is that the process chamber of the single-wafer phosphoric acid cleaning machine includes multiple chuck pins, which are evenly distributed on the edge of the monitoring wafer when the monitoring wafer is fixed by the chuck pins.

[0028] A further improvement is that the number of chuck pins in the process chamber of the single-piece phosphoric acid cleaning machine is 6.

[0029] A further improvement is that the monitoring wafer comprises a silicon wafer.

[0030] Unlike existing technologies that determine chuck pin replacement timing based on fixed time intervals or fixed throughput, this invention specifically selects germanium-silicon material, i.e., the first germanium-silicon thin film layer, as the monitoring material. After the first germanium-silicon thin film layer is etched with phosphoric acid cleaning solution (i.e., the first etching), the etching amount in the edge region of the wafer, i.e., the first etching amount, can effectively reflect the state of the chuck pin. Therefore, by measuring the first etching amount and obtaining the fluctuation range of the first etching amount, combined with the preset first and second set values, this invention can accurately determine the state of the chuck pin, and thus determine the replacement time point of the chuck pin based on the abnormal state of the chuck pin. Therefore, this invention can accurately determine the replacement time point of the chuck pin, thereby preventing product abnormalities and improving product yield. Attached Figure Description

[0031] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:

[0032] Figure 1 This is a top view of the interior of the process chamber of an existing single-plate phosphoric acid cleaning machine;

[0033] Figure 2 This is a map showing the film thickness loss of the product wafers on the production line after phosphoric acid cleaning when the chuck ejector pin of an existing single-wafer phosphoric acid cleaning machine malfunctions.

[0034] Figure 3 This is a map of the silicon nitride etching rate of the wafer obtained when using the chuck ejector pin of a single-wafer phosphoric acid cleaning machine with silicon nitride thin film monitoring.

[0035] Figure 4 This is a flowchart of a monitoring method for the chuck ejector pin of a single-piece phosphoric acid cleaning machine according to an embodiment of the present invention;

[0036] Figure 5 This is a flowchart illustrating the monitoring method for the chuck ejector pin of a single-piece phosphoric acid cleaning machine according to a preferred embodiment of the present invention.

[0037] Figure 6A This is a curve of the first etching amount collected in the monitoring method of the chuck ejector pin of the single-piece phosphoric acid cleaning machine in a preferred embodiment of the present invention;

[0038] Figure 6B This is a curve of the fluctuation range of the first etching amount collected in the monitoring method of the chuck ejector pin of the single-piece phosphoric acid cleaning machine in a preferred embodiment of the present invention.

[0039] Figure 7A This is a map showing the thickness loss of the first germanium-silicon thin film layer on the wafer when monitoring chuck pin abnormalities in the chuck pin monitoring method of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention.

[0040] Figure 7BThis is a map showing the thickness loss of the first germanium-silicon thin film layer on the wafer after the chuck ejector pin is replaced in the monitoring method of the chuck ejector pin of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention.

[0041] Figure 8 This is a map showing the film thickness loss of the product wafers on the production line after the chuck ejector pins are replaced in the monitoring method of the chuck ejector pins of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention. Detailed Implementation

[0042] like Figure 4 The diagram shown is a flowchart of the monitoring method for the chuck ejector pin 102 of the single-piece phosphoric acid cleaning machine according to an embodiment of the present invention; as shown... Figure 5 The diagram shown is a flowchart illustrating the monitoring method for the chuck ejector pin 102 of a single-piece phosphoric acid cleaning machine according to a preferred embodiment of the present invention. The monitoring method for the chuck ejector pin 102 of the single-piece phosphoric acid cleaning machine according to this embodiment includes the following monitoring steps:

[0043] Step 1: Provide monitoring wafers.

[0044] In this embodiment of the invention, the monitoring wafer includes a silicon wafer, i.e., a wafer formed from monocrystalline silicon. The size of the monitoring wafer is determined according to the process cavity size of the chuck ejector pin 102 of the monolithic phosphoric acid cleaning machine to be monitored. For example, when the process cavity size is suitable for 6-inch, 8-inch, or 12-inch product wafers, the corresponding size of the monitoring wafer is also 6-inch, 8-inch, or 12-inch, respectively.

[0045] Please also refer to the top view of the process chamber of the single-plate phosphoric acid cleaning machine to be monitored in this embodiment of the invention. Figure 1 As shown, the process chamber of the single-wafer phosphoric acid cleaning machine includes a plurality of chuck pins 102. When the chuck pins 102 fix the monitoring wafer, the chuck pins 102 are evenly distributed on the edge of the monitoring wafer. Figure 1 The image shows a platform structure 101 for placing wafers, with multiple chuck pins 102 arranged at equal angles around the periphery of the platform structure 101. Figure 1 The image shows six chuck ejector pins 102, with the sector angle between any two adjacent chuck ejector pins 102 being 60 degrees. In other embodiments, the number of chuck ejector pins 102 can be set to a number other than six as needed.

[0046] The chuck pin 102 has open and clamping states. In the open state, it facilitates the loading and unloading of wafers, such as monitoring wafers or product wafers; in the clamping state, it secures the wafer for easy rotation. The wafer rotation is driven by the rotation mechanism of the platform structure 101. During wafer rotation, the corresponding centrifugal force evenly distributes the cleaning solution, i.e., phosphoric acid, onto the wafer surface and ejects it. In some examples, the chuck pin 102 directly utilizes centrifugal force for clamping. In other examples, the chuck pin 102 can also be controlled to open and clamp using a cylinder and linkage mechanism.

[0047] like Figure 5 As shown, in some preferred embodiments, the number of monitoring wafers is one or more, and the step of providing the monitoring wafers corresponds to... Figure 5 In step S101, several wafers are provided. These wafers are the monitoring wafers, not product wafers. Product wafers typically have semiconductor device structures corresponding to the product formed in them. The monitoring wafers, on the other hand, are bare wafers without any structures formed in them.

[0048] Subsequently, a first germanium-silicon thin film layer is formed on the monitoring wafer.

[0049] In some preferred embodiments, the germanium concentration of the first germanium-silicon thin film layer is 35% to 45%. For example... Figure 5 As shown, this step corresponds to step S102, depositing a SiGe thin film with a Ge concentration of 35% to 45%, which is the first germanium-silicon thin film. More preferably, the germanium concentration of the first germanium-silicon thin film layer is 40%.

[0050] In some embodiments, prior to the first etching in the subsequent step two, the method further includes:

[0051] The surface of the first germanium-silicon thin film layer was pretreated with hydrofluoric acid.

[0052] The pretreatment is primarily used to remove the native oxide layer on the surface of the first germanium-silicon thin film. In some preferred embodiments, hydrofluoric acid is diluted 200:1 (DHF), and the pretreatment time is 2 minutes. This step corresponds to... Figure 5 Step S103: Pretreatment with 200:1 hydrofluoric acid for 2 min.

[0053] Step 2: The first germanium-silicon thin film layer is etched for the first time using the phosphoric acid cleaning solution. During the first etching, the monitoring wafer is clamped and fixed by the chuck pin 102.

[0054] In some embodiments, the etching time for the first etching is 180s to 240s.

[0055] During the first etching, the monitored wafer rotates at a speed of 300 rpm to 400 rpm.

[0056] Step 3: Measure the first etching amount and the fluctuation range of the first etching amount of the first germanium-silicon thin film layer in the edge region of the monitored wafer.

[0057] In some preferred embodiments, steps two and three correspond to Figure 5 In step S104, collect the amount of phosphoric acid etched on the wafer by the single-wafer phosphoric acid cleaning machine.

[0058] Step 4: Determine the state of the chuck ejector pin 102, including:

[0059] If the first etching amount is greater than a first set value or the fluctuation range of the first etching amount is greater than a second set value, then the chuck ejector pin 102 is determined to be abnormal. That is, if either the first etching amount is greater than the first set value or the fluctuation range of the first etching amount is greater than the second set value, then the chuck ejector pin 102 is abnormal. Figure 5 In the preferred embodiment shown, this step corresponds to Figure 5 The steps S105b, etching amount, and fluctuation range are abnormal.

[0060] If the first etching amount is less than or equal to the first set value and the fluctuation range of the first etching amount is less than or equal to the second set value, then the chuck ejector pin 102 is determined to be normal. Figure 5 In the preferred embodiment shown, this step corresponds to Figure 5 The steps S105a, etching amount, and fluctuation range are normal.

[0061] In this embodiment of the invention, the first set value is obtained by collecting and statistically analyzing multiple first etching values. The second set value is obtained by collecting and statistically analyzing the fluctuation ranges of multiple first etching values. In some examples, the first set value is... The second setting value is

[0062] In this embodiment of the invention, when the chuck ejector pin 102 is determined to be abnormal, the single-piece phosphoric acid washing machine stops running and replaces the chuck ejector pin 102. Figure 5 In the preferred embodiment shown, this step corresponds to step S107, where the machine chuckpin needs to be replaced. The machine here refers to the single-plate phosphoric acid cleaning machine.

[0063] When the chuck ejector pin 102 is determined to be normal, the single-piece phosphoric acid cleaning machine operates normally. Figure 5 In the preferred embodiment shown, this step corresponds to step S106, where the machine runs normally.

[0064] like Figure 6A The figure shown is a graph of the first etching amount collected in the monitoring method of the chuck ejector pin of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention; curve 201 is the curve of the first etching amount collected, that is, the curve of the etching amount at the edge of the SiGe thin film wafer. The etching amount on the vertical axis is the first etching amount. Curve 201 is formed by connecting multiple points, and the horizontal axis corresponds to the state of the chuck ejector pin 102 corresponding to the first etching amount collected at different times. The vertical axis is... The straight line 202 is the straight line corresponding to the first set value. It can be seen that in the area corresponding to the dashed box 203, the curve 201 is located above the straight line 202. Therefore, it is determined that the corresponding chuck ejector pin 102 is abnormal. Figure 6A The pin is abnormal as shown. When a pin abnormality is detected, the chuck ejector pin 102 needs to be replaced. It can be seen that the area before the dashed box 203 is the area where the chuck ejector pin 102 is normal, that is, the pin is normal, and the area after the dashed box 203 is the area after the chuck ejector pin 102 is replaced and it returns to normal, that is, the area after the pin is replaced.

[0065] like Figure 6B The figure shows a curve of the fluctuation range of the first etching amount collected in the monitoring method of the chuck ejector pin of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention. Curve 204 is the curve of the fluctuation range of the first etching amount, that is, the curve of the etching amount range at the edge of the SiGe thin film wafer. The range on the vertical axis is the fluctuation range of the first etching amount. Curve 204 is formed by connecting multiple points. The horizontal axis corresponds to the state of the chuck ejector pin 102 corresponding to the fluctuation range of the first etching amount collected at different times. The vertical axis is... Line 205 is the line corresponding to the second set value. It can be seen that in the area corresponding to the dashed box 206, curve 204 is located above line 205. Therefore, the corresponding chuck ejector pin 102 is judged to be abnormal. Figure 6B The pin is abnormal as shown. When a pin abnormality is detected, the chuck ejector pin 102 needs to be replaced. It can be seen that the area before the dashed box 206 is the area where the chuck ejector pin 102 is normal, that is, the pin is normal, and the area after the dashed box 206 is the area after the chuck ejector pin 102 is replaced and it returns to normal, that is, the area after the pin is replaced.

[0066] In this embodiment of the invention, the monitoring step is performed once a day or once every few days. In other embodiments, the frequency of the monitoring step can also be set as needed. For example, the frequency of the monitoring step can be set in conjunction with the running time or running volume. When the running time or running volume increases, the wear of the chuck ejector pin 102 increases, and the probability of abnormality also increases. In this case, the frequency of the monitoring step can be increased as needed; conversely, the frequency can be decreased.

[0067] Unlike existing technologies that determine the replacement timing of the chuck ejector pin 102 by a fixed time or a fixed quantity of goods, this embodiment of the invention specifically selects germanium-silicon material, i.e., the first germanium-silicon thin film layer, as the monitoring material. After the first germanium-silicon thin film layer is etched by phosphoric acid cleaning solution, i.e., the first etching amount, the etching amount of the edge area of ​​the wafer can well reflect the state of the chuck ejector pin 102. Therefore, this embodiment of the invention can accurately determine the state of the chuck ejector pin 102 by measuring the first etching amount and obtaining the fluctuation range of the first etching amount, and combining it with the preset first and second set values. Thus, it can determine the replacement time point of the chuck ejector pin 102 based on the abnormal state of the chuck ejector pin 102. Therefore, this embodiment of the invention can accurately determine the replacement time point of the chuck ejector pin 102, thereby preventing product abnormalities and improving product yield.

[0068] like Figure 7A The image shown is map 204, which is a map of the thickness loss of the first germanium-silicon thin film layer on the offline monitoring wafer when the chuck ejector pin of the single-wafer phosphoric acid cleaning machine is monitored for abnormality in the chuck ejector pin according to a preferred embodiment of the present invention. The location of the measurement data in map 204 corresponds one-to-one with the actual location on the monitored wafer. Figure 7A In the diagram, the three straight lines 205 correspond to the lines connecting two chuck pins 102 located on the same diameter. It can be seen that in the edge region of each chuck pin 102 corresponding to the dashed circle 206, the thickness loss of the first germanium-silicon thin film layer will increase. This can be used to determine that the chuck pin 102 is abnormal and thus determine that the chuck pin 102 needs to be replaced.

[0069] In existing methods, such as Figure 3As shown, when silicon nitride is used as the monitoring film, the thickness loss in the edge area is uniform when the chuck ejector pin 102 malfunctions, and is independent of the position of the chuck ejector pin 102. Therefore, it is impossible to determine the replacement time of the chuck ejector pin 102 by using silicon nitride as the monitoring film. Existing methods can only determine the replacement time of the chuck ejector pin 102 by using a fixed time or a fixed throughput; however, this may result in the chuck ejector pin 102 malfunctioning before the fixed time or throughput is reached, which will affect the product. Furthermore, some chuck ejector pins 102 may still be normal after the fixed time or throughput is reached. Replacing them at this time would be relatively premature, and replacing normal chuck ejector pins 102 would obviously increase costs. Additionally, the replacement operation requires machine downtime, which reduces the machine's throughput time, affecting throughput efficiency and further increasing costs. By using the method of the present invention, the replacement time of the chuck ejector pin 102 can be determined appropriately. It can avoid replacing it in advance, thereby avoiding affecting production capacity and reducing costs, and it can also avoid replacing it in a delayed manner, thereby avoiding adverse effects on the product and ensuring product yield.

[0070] like Figure 7B The image shown is map 204', which illustrates the offline monitoring of the thickness loss of the first germanium-silicon thin film layer on the wafer after the chuck pin is replaced in the monitoring method for the chuck pin of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention. It can be seen that the thickness loss of the first germanium-silicon thin film layer in the edge region of map 204' is uniformly distributed, and there is no increase in thickness loss at the chuck pin 102. Therefore, the replaced chuck pin 102 is normal and will not have an adverse effect on the product.

[0071] like Figure 8 The image shown is map 301, which illustrates the film thickness loss of the on-line product wafers after replacing the chuck ejector pins in the monitoring method of the chuck ejector pins of the single-wafer phosphoric acid cleaning machine according to a preferred embodiment of the present invention. Map 301 corresponds to the distribution of film thickness loss on the actual on-line product wafers. It can be seen that the film thickness loss of the on-line product wafers is uniformly distributed; no film thickness loss is observed. Figure 2 In the film thickness loss distribution diagram of the online product wafer corresponding to map 103, there is an increase in film thickness loss in the edge region of the chuck pin 102 shown by the dashed circle 104. Therefore, the online product wafer is normal and is not affected by the abnormality of the chuck pin 102.

[0072] The present invention has been described in detail above through specific embodiments, but these are not intended to limit the invention. Many modifications and improvements can be made by those skilled in the art without departing from the principles of the invention, and these should also be considered within the scope of protection of the present invention.

Claims

1. A method for monitoring the chuck ejector pin of a single-piece phosphoric acid cleaning machine, characterized in that, The monitoring steps include: Step 1: Provide a monitoring wafer and form a first germanium-silicon thin film layer on the monitoring wafer; Step 2: The first germanium-silicon thin film layer is etched for the first time using the phosphoric acid cleaning solution. During the first etching, the monitoring wafer is clamped and fixed by the chuck pin. Step 3: Measure the first etching amount and the fluctuation range of the first etching amount of the first germanium-silicon thin film layer in the edge region of the monitored wafer; Step 4: Determine the state of the chuck ejector pin, including: If the first etching amount is greater than the first set value or the fluctuation range of the first etching amount is greater than the second set value, then the chuck ejector pin is determined to be abnormal. If the first etching amount is less than or equal to the first set value and the fluctuation range of the first etching amount is less than or equal to the second set value, then the chuck ejector pin is determined to be normal.

2. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The germanium concentration of the first germanium-silicon thin film layer is 35% to 45%.

3. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 2, characterized in that: The germanium concentration of the first germanium-silicon thin film layer is 40%.

4. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The etching time for the first etching is 180s to 240s.

5. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 4, characterized in that: During the first etching, the monitored wafer rotates at a speed of 300 rpm to 400 rpm.

6. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: When the chuck ejector pin is found to be abnormal, the single-piece phosphoric acid washing machine stops running and replaces the chuck ejector pin.

7. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: When the chuck ejector pin is determined to be normal, the single-piece phosphoric acid cleaning machine will operate normally.

8. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: Prior to the first etching in step two, the process also includes: The surface of the first germanium-silicon thin film layer was pretreated with hydrofluoric acid.

9. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: In step one, the number of monitored wafers is one or more.

10. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The monitoring steps are performed once a day or once every few days.

11. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The first set value is obtained by collecting multiple first etching values ​​and performing statistical analysis. The second set value is obtained by collecting and statistically analyzing the fluctuation ranges of multiple first etching amounts.

12. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 11, characterized in that: The first setting value is The second setting value is 13. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The process chamber of the single-wafer phosphoric acid cleaning machine includes multiple chuck pins. When the chuck pins fix the monitoring wafer, the chuck pins are evenly distributed on the edge of the monitoring wafer.

14. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 13, characterized in that: The number of chuck pins in the process chamber of the single-piece phosphoric acid cleaning machine is 6.

15. The monitoring method for the chuck ejector pin of the single-piece phosphoric acid cleaning machine as described in claim 1, characterized in that: The monitoring wafer includes a silicon wafer.

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