High-purity water intelligent cleaning device and process for semiconductor ultra-pure gas valve cavity

Abstract

The invention relates to the technical field of semiconductor valves, in particular to a high-purity-water intelligent cleaning device and process for a semiconductor ultra-pure gas valve cavity. The high-purity-water intelligent cleaning device comprises a cleaning box body with material openings formed in the two sides, and a cleaning assembly used for clamping a semiconductor valve to conduct rotational flow flushing on the inner wall of the semiconductor valve and conducting comprehensive flushing on the outer wall of the semiconductor valve is arranged in the cleaning box body; the feeding assembly is used for conveying the semiconductor valves at equal intervals and assisting the cleaning assembly in precise butt joint and clamping, and the purging assembly is used for cleaning residual high-purity water in inner cavities of the semiconductor valves. The ultrahigh cleanliness of the inner cavity of the valve is achieved through rotational flow washing, valve reverse rotation and internal and external synchronous cleaning in cooperation with high-purity water full-flow-state ion desorption, and secondary pollution is avoided from the source; meanwhile, elastic sleeves with different diameters are replaced to adapt to precise positioning of valves with multiple specifications, cleaning and drying are seamlessly connected and linked, no damage is caused in the whole process, automatic continuous operation is achieved, and the high-standard production requirement of semiconductors is met.

Description

Technical Field

[0001] This invention relates to the field of semiconductor valve technology, and in particular to a high-purity water intelligent cleaning device and process for semiconductor ultrapure gas valve cavities. Background Technology

[0002] In semiconductor device manufacturing processes, valves in ultrapure gas transmission systems are core components ensuring the purity of the process chamber environment. The cleanliness of their chamber surfaces directly determines the purity level of the ultrapure gas and is a crucial factor affecting the stability of core processes such as semiconductor wafer etching and deposition, as well as chip production yield and product performance. Currently, the industry mainstream technologies for cleaning semiconductor ultrapure gas valve chambers are chemical cleaning and physical cleaning. Chemical cleaning removes contaminants by reacting acidic or alkaline chemical reagents with oil, oxide layers, and other impurities on the valve chamber surface, typically through soaking, wiping, and spraying. Physical cleaning relies on the impact force generated by ultrasonic cavitation and high-pressure sandblasting to remove surface deposits. Neither of these technologies is specifically designed for the nanogram-level metal ion removal requirements of semiconductor manufacturing.

[0003] During chemical cleaning, impurities contained in the reagents can easily remain on the surface of the valve cavity. Trace amounts of chemical residues can enter the process cavity with ultrapure gas, causing contamination of core processes and leading to process fluctuations. Furthermore, if parameters such as reagent concentration and cleaning time are not properly controlled, they can corrode the surface of the valve cavity, affecting its sealing performance and service life. While physical cleaning does not have the problem of chemical residues, methods such as ultrasonic cleaning and sandblasting are extremely ineffective at removing nanoscale trace metal ions such as sodium, iron, and copper adhering to the cavity surface. Sandblasting can also cause mechanical damage to the smoothness and finish of the valve cavity. At the same time, traditional cleaning technologies lack a precise and intelligent parameter control system, making it difficult to stably control key parameters such as water flow rate and cleaning time, resulting in poor cleaning consistency. This fails to meet the stringent ultra-clean requirements of semiconductor manufacturing for particulate matter, single metal ions, and TOC in valve cavities, becoming a key industry pain point that restricts the improvement of semiconductor chip production yield and the guarantee of process stability.

[0004] To address the aforementioned technical deficiencies, a solution is proposed that achieves ultra-high cleanliness of the valve cavity through swirling flushing, reverse valve rotation, and simultaneous internal and external cleaning, combined with full-flow ion desorption of high-purity water, thus preventing secondary contamination at its source. Simultaneously, by replacing elastic sleeves of different diameters, the system can accurately position valves of various specifications, seamlessly linking cleaning and drying operations, ensuring damage-free, automated, and continuous operation, thus meeting the high-standard production requirements of the semiconductor industry. Summary of the Invention

[0005] The purpose of this invention is to provide a high-purity water intelligent cleaning device and process for semiconductor ultrapure gas valve chambers, in order to solve the aforementioned technical defects.

[0006] The objective of this invention can be achieved through the following technical solution: a high-purity water intelligent cleaning device for the cavity of a semiconductor ultrapure gas valve, comprising a cleaning chamber with material inlets on both sides, wherein the cleaning chamber is equipped with a cleaning assembly for clamping the semiconductor valve and swirling and flushing its inner wall and thoroughly rinsing its outer wall, a feeding assembly for equidistantly conveying the semiconductor valve and assisting the cleaning assembly in precise docking and clamping, and a purging assembly for cleaning residual high-purity water in the cavity of the semiconductor valve, wherein the cleaning assembly includes two sets of clamping covers with a funnel-shaped structure, an inlet pipe and an outlet pipe rotatably connected to the corresponding clamping cover pipe section, and a shower head that cooperates with the outlet pipe, wherein the inlet pipe is equipped with spiral blades.

[0007] Preferably, the free end of the inlet pipe is fixedly connected to an inlet volute, and an impeller is provided inside the inlet volute. The blades of the impeller are inclined. A rotating rod is rotatably connected to the inlet volute and fixedly connected to the impeller and the spiral blades. The distance between the outer wall of the rotating rod and the inner wall of the inlet pipe gradually decreases from the inlet volute to the clamping cover.

[0008] Preferably, the shower head is fixed to the top of the cleaning tank, and the shower head is fixedly connected to the free end of the liquid outlet pipe through a liquid outlet hose. An elastic pad is embedded in the conical inner wall of the clamping cover, and a flow rate sensor is installed on the liquid outlet pipe.

[0009] Preferably, the cleaning chamber is provided with two sets of movable plates fixedly connected to the corresponding inlet and outlet pipes. Two sets of guide rods are fixedly connected to the cleaning chamber and slidably connected to the movable plates. Guide wheels are rotatably installed on both sides of the cleaning chamber and are connected to each other by a transmission belt. Both sets of movable plates are fixedly connected to the transmission belt, and the two fixed connection points are located on both sides of the guide wheels. An electric push rod is installed between one set of movable plates and the inner wall of the cleaning chamber.

[0010] Preferably, a waterproof motor is bolted to one of the movable plates, and a gear is installed at the output end of the waterproof motor. A gear ring that meshes with the gear is fixedly installed on the tube section of the clamping cover.

[0011] Preferably, the purging assembly includes an air inlet pipe and an air return pipe fixedly connected to the corresponding movable plate. A rotating nozzle is rotatably installed at one end of the air inlet pipe. A sealing abutment plate is slidably connected to both the air inlet pipe and the air return pipe, and a spring is fixedly installed between the sealing abutment plate and the movable plate. A one-way valve is installed inside the air inlet pipe, the air return pipe, and the clamping cover pipe section.

[0012] Preferably, the feeding assembly includes multiple equally spaced support frames, and two sets of support wheels are rotatably connected to both sides of each support frame. An elastic sleeve is fitted on the annular outer wall of each support wheel, and the support wheel has a waist-drum shaped structure that is thicker in the middle and thinner at both ends.

[0013] Preferably, the cleaning tank is internally fixedly connected to a conveyor platform that is slidably connected to a support frame, and both sides of the conveyor platform are rotatably connected to synchronous pulleys. The synchronous pulleys are fixedly connected to each other by a synchronous belt. The support frame is fixedly connected to the synchronous belt by screws. Two sets of limit wheels are rotatably installed on both sides of the support frame. The conveyor platform has a stepped groove inside that rolls against the limit wheels. A drive motor that drives the corresponding synchronous pulley to rotate is installed on the conveyor platform by bolts.

[0014] The high-purity water intelligent cleaning process for semiconductor ultrapure gas valve chambers includes the following steps: Step 1: Precise positioning and conveying of multi-specification valves: The drive motor drives the support frame to rotate in a ring, placing the semiconductor valve tube section in the elastic sleeve of the appropriate specification, so that the semiconductor valve and the clamping cover axis are at the same height, which assists in subsequent sealing, positioning and docking, and then the semiconductor valve is conveyed intermittently at equal distances; Step Two: Full-flow swirling flushing of the inner cavity and simultaneous rinsing of the outer surface: Two sets of clamping covers clamp the end of the semiconductor valve. High-purity water with a resistance ≥18.24MΩ·cm is injected into the inner cavity of the semiconductor valve through the inlet volute to achieve full-flow ion desorption. The water flow velocity is in the range of 0.5-3.0m / s. This drives the impeller to drive the high-purity water to flow in a spiral shape. With the flow channel diameter change, the swirling intensity against the wall is improved. The semiconductor valve rotates in the opposite direction to strengthen the flushing of the inner cavity. At the same time, the shower head simultaneously rinses the outer surface of the valve, achieving a comprehensive cleaning without dead angles inside and out. Step 3: Nitrogen Cyclone Purging and Drying of the Inner Cavity: The semiconductor valve is intermittently moved to the drying station, the sealing contact plate clamps the valve, high-purity nitrogen is injected into the air inlet pipe and swirls through the rotating nozzle to purge the inner cavity, and the nitrogen is recovered through the return air pipe to achieve no liquid droplet residue in the inner cavity, and the residual particulate matter on the surface of the semiconductor valve is <1 particle / ml; single metal ion <10ppt; TOC <100ppt.

[0015] The beneficial effects of this invention are as follows: (1) This invention achieves efficient and deep cleaning of semiconductor ultrapure gas valve cavity through a combination of swirling scouring, reverse rotation and synchronous internal and external cleaning: high-purity water forms a high-intensity wall-adhering swirling flow through impeller, spiral blades and variable diameter flow channel, which, together with the valve rotating in the opposite direction to the swirling flow, forms a powerful scouring of the inner cavity flow channel, groove and other dead corners that are prone to dirt accumulation. At the same time, the shower head simultaneously completes the rinsing of the outer surface of the valve. The cleaning method with no dead corners inside and outside greatly improves the cleaning efficiency. In addition, the use of high-purity water to achieve full-flow ion desorption can efficiently complex and remove trace metal ions such as sodium, iron and copper from the cavity surface. Combined with precise flow rate control throughout the process and the Class 100 cleanroom operating environment, the ultra-high cleanliness standard of the valve cavity is finally achieved, avoiding secondary pollution in the ultrapure gas transmission process from the source and ensuring the environmental purity of the semiconductor process cavity.

[0016] (2) This invention relies on the combination of elastic sleeve specification adaptation and seamless connection of cleaning and drying to achieve non-destructive and precise cleaning, efficient drying and automated continuous operation of semiconductor ultrapure gas valves of different specifications: by replacing elastic sleeves of different diameters, valves of different sizes are assisted to be precisely aligned with the shaft of the clamping cover, and with the intermittent equidistant conveying of the ring, the universal sealing and positioning of valves of multiple specifications is achieved, avoiding insufficient cleaning or leakage of high-purity water due to differences in valve specifications; while the cleaning process is carried out, the sealing abutment plate clamps the valve, and high-purity nitrogen gas is used to purge the inner cavity to achieve dryness without liquid droplet residue, thus achieving seamless connection and linkage of cleaning and drying processes. Attached Figure Description

[0017] The invention will now be further described with reference to the accompanying drawings; Figure 1 This is a schematic diagram of the structure of the present invention; Figure 2 This is a schematic diagram of the internal structure of the cleaning chamber of the present invention; Figure 3 This is a schematic diagram of the cleaning chamber of the present invention; Figure 4 This is a schematic diagram of the feeding assembly of the present invention; Figure 5 This is a schematic diagram of the installation of the cleaning component and the purging component of the present invention; Figure 6 This is a schematic diagram of the liquid inlet pipe of the present invention; Figure 7 This is a schematic diagram of the rotating rod of the present invention; Figure 8 This is a schematic diagram of the liquid outlet pipe of the present invention; Figure 9 This is a flowchart of the cleaning process of the present invention.

[0018] Legend: 1. Cleaning box; 11. Moving plate; 12. Guide wheels; 13. Drive belt; 14. Electric push rod; 15. Waterproof motor; 2. Clamping cover; 21. Inlet pipe; 22. Outlet pipe; 23. Shower head; 24. Spiral blades; 25. Inlet volute; 26. Impeller; 27. Rotating rod; 28. Outlet hose; 3. Air inlet duct; 31. Air return duct; 32. Rotary nozzle; 33. Sealing contact plate; 34. Spring; 4. Support frame; 41. Support roller; 42. Elastic sleeve; 43. Conveyor table; 44. Synchronous belt; 45. Limiting wheel; 46. Step groove; 47. Drive motor. Detailed Implementation

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0020] Example 1: Please refer to Figures 1-3 and Figures 5-8 As shown, existing cleaning technologies are unable to completely remove nanoscale metal ions adhering to the valve surface, and their interception effect on tiny ions is limited. Trace amounts of metal ions mixed into ultrapure gases used in semiconductor manufacturing will deposit in critical process steps, affecting the performance and quality of semiconductor products. The following solutions can be used to address this issue. In this embodiment, the high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity includes a cleaning chamber 1 with material inlets on both sides. The cleaning chamber 1 is placed in a Class 100 clean room to prevent external impurities from re-adhering to the surface of the semiconductor valve after cleaning. The bottom of the cleaning chamber 1 has a drain outlet for the high-purity water used for cleaning the semiconductor valve to be discharged and recycled. The cleaning chamber 1 is equipped with a material-grabbing robotic arm on both sides, which, together with the material inlets on both sides, is used to realize automatic feeding and unloading of semiconductor valves. The cleaning chamber 1 is equipped with a cleaning assembly for clamping semiconductor valves and swirling and rinsing their inner walls and outer walls, a feeding assembly for equidistantly conveying semiconductor valves and assisting the cleaning assembly in precise docking and clamping, and a purging assembly for cleaning residual high-purity water from the inner cavity of the semiconductor valves. The cleaning assembly includes two sets of funnel-shaped clamping covers 2. When the two sets of funnel-shaped clamping covers 2 move relative to each other, they can effectively clamp semiconductor valves of different sizes and avoid high-purity water leakage in the clamping area. The inlet pipe 21 and outlet pipe 22 are rotatably connected to the corresponding clamping cover 2 pipe sections, and a shower head 23 cooperates with the outlet pipe 22. The inlet pipe 21 is equipped with spiral blades 24.

[0021] The free end of the inlet pipe 21 is fixedly connected to the inlet volute 25, and an impeller 26 is provided inside the inlet volute 25. The blades of the impeller 26 are inclined. A rotating rod 27 is rotatably connected to the inlet volute 25 and is fixedly connected to the impeller 26 and the spiral blades 24. During the process of injecting high-purity water into the inlet volute 25, the impeller 26 is driven to rotate, which drives the spiral blades 24 to rotate in the inlet pipe 21. This causes the high-purity water entering the inner cavity of the semiconductor valve to flow in a spiral shape synchronously, flushing the flow channels, grooves and other parts of the semiconductor valve that are prone to dirt accumulation, so as to avoid the problem of cleaning dead corners that cannot reach ultrapure water. The tilted arrangement of the impeller blades 26 assists in pushing the high-purity water in the inlet volute 25 into the inlet pipe 21 during the rotation of the impeller 26, thereby increasing the flow rate of the high-purity water. The distance between the outer wall of the rotating rod 27 and the inner wall of the inlet pipe 21 gradually decreases from the inlet volute 25 to the clamping cover 2, which further increases the flow rate of the high-purity water entering the inner cavity of the semiconductor valve while strengthening the wall-adhering swirling intensity, thus further improving the effect of inner wall flushing and cleaning.

[0022] The shower head 23 is fixed to the top inside the cleaning tank 1, and the shower head 23 and the free end of the outlet pipe 22 are fixedly connected through the outlet hose 28. Two sets of clamping covers 2 clamp the two ends of the semiconductor valve. High-purity water is injected into the inlet volute 25, and then sprayed out from the inlet pipe 21, clamping cover 2, semiconductor valve cavity, clamping cover 2, outlet pipe 22, outlet hose 28 and shower head 23 to the outer surface of the semiconductor valve. The high-purity water completely submerges the semiconductor valve cavity, realizing full-flow ion desorption, ensuring full contact between water molecules and the semiconductor valve cavity, improving the metal ion desorption efficiency, and removing impurities from the cavity surface. An elastic pad is embedded in the conical inner wall of the clamping cover 2 to increase the resistance and sealing of the clamping cover 2 when clamping the semiconductor valve. A flow rate sensor is installed on the outlet pipe 22. The water flow rate is set within the range of 0.5-3.0 m / s to maintain a stable flow rate and continuous supply of high-purity water. The high-purity water is in full contact with the surface of the semiconductor valve. Through the ion desorption mechanism, trace metal ions such as sodium, iron, and copper on the surface of the chamber are desorbed and complexed. The complexed metal ions are carried away with the continuous flow of ultrapure water. The cleaning time is detected by an external control system, and the flow rate parameters are monitored in real time throughout the process by the flow rate sensor to maintain a stable and efficient rinsing effect.

[0023] The cleaning chamber 1 is equipped with two sets of movable plates 11 fixedly connected to the corresponding inlet pipe 21 and outlet pipe 22. The cleaning chamber 1 is fixedly connected with two sets of guide rods that are slidably connected to the movable plates 11. Guide wheels 12 are rotatably installed on both sides of the cleaning chamber 1, and the guide wheels 12 are connected to each other by a transmission belt 13. Both sets of movable plates 11 are fixedly connected to the transmission belt 13, and the two fixed connection points are located on both sides of the guide wheels 12. One set of movable plates 11 is equipped with an electric push rod 14 between it and the inner wall of the cleaning chamber 1. The electric push rod 14 pushes the corresponding movable plate 11 to move horizontally. The other set of movable plates 11, together with the guide wheels 12, moves synchronously relative to or away from the transmission belt 13.

[0024] A waterproof motor 15 is bolted to one of the movable plates 11, and a gear is installed at the output end of the waterproof motor 15. A gear ring that meshes with the gear is fixedly installed on the pipe section of the clamping cover 2. The waterproof motor 15, together with the gear and the gear ring, drives the corresponding clamping cover 2 to rotate, and the rotation direction is opposite to the high-purity water swirling direction, causing the semiconductor valve to rotate in the opposite direction. This further increases the swirling flushing effect in the inner cavity, while simultaneously removing impurities from the outer surface with the high-purity water sprayed from the shower head 23 without any dead angles.

[0025] Example 2: Please refer to Figure 1 , Figure 2 , Figure 4 , Figure 6 and Figure 8 As shown, the problems of non-destructive and precise cleaning, efficient drying and automated continuous processing of semiconductor ultrapure gas valves of different specifications can be solved by the following solutions; In this embodiment, the purging assembly includes an air inlet pipe 3 and an air return pipe 31 fixedly connected to the corresponding moving plate 11. A rotating nozzle 32 is rotatably installed at one end of the air inlet pipe 3. Sealing abutment plates 33 are slidably connected to both the air inlet pipe 3 and the air return pipe 31. After the semiconductor valve is cleaned, the two sets of moving plates 11 move away from each other, and multiple semiconductor valves are intermittently translated, causing the two sets of clamping covers 2 to clamp and rinse the next semiconductor valve. At the same time, the two sets of sealing abutment plates 33 clamp the two sides of the cleaned semiconductor valve. High-purity nitrogen is injected into the semiconductor valve through the air inlet pipe 3, and swirling purging is performed by the rotating nozzle 32. The nitrogen is then collected and reused through the return air pipe 31, so that the high-purity water in the inner cavity of the semiconductor valve is completely drained after cleaning, leaving no droplets and preventing ions in the residual water from being re-adsorbed onto the surface of the inner cavity of the semiconductor valve. Furthermore, a spring 34 is fixedly installed between the sealing contact plate 33 and the moving plate 11. The spring 34 is used to clamp the semiconductor valves of different sizes when the clamping cover 2 clamps them. The sealing contact plate 33 can clamp the cleaned semiconductor valves simultaneously to achieve effective purging and dehumidification. One-way valves are installed inside the air inlet pipe 3, the return air pipe 31 and the clamping cover 2 pipe sections to prevent the high-purity nitrogen in the air inlet pipe 3 and the return air pipe 31, as well as the high-purity water in the liquid inlet pipe 21, the liquid outlet pipe 22 and the liquid outlet hose 28 from flowing out when the sealing contact plate 33 is separated from the clamping cover 2, under the condition of no gas or liquid pressure. This improves the utilization rate of high-purity nitrogen and high-purity water.

[0026] The feeding assembly includes multiple equally spaced support frames 4, and two sets of support wheels 41 are rotatably connected to both sides of the support frame 4. An elastic sleeve 42 is fitted on the annular outer wall of the support wheel 41. The gripping robotic arm grips the semiconductor valve to be cleaned and places it on the support frame 4. The pipe sections on both sides of the semiconductor valve are placed on the corresponding two sets of elastic sleeves 42. The semiconductor valve is moved to the cleaning and drying station by the translation of the support frame 4. For semiconductor valves of different sizes, the elastic sleeves 42 of different diameters are replaced to help the center line of the semiconductor valve and the center line of the clamping cover 2 be at the same height. This enables precise, undamaged, and sealed positioning and docking of semiconductor valves of different specifications, preventing insufficient cleaning or leakage of internal high-purity water caused by displacement of the semiconductor valve during cleaning. The support roller 41 has a waist-drum-shaped structure that is thick in the middle and thin at both ends to avoid the problem of the elastic sleeve 42 falling off from the support roller 41.

[0027] The cleaning box 1 is fixedly connected to a conveyor table 43 that is slidably connected to a support frame 4. Both sides of the conveyor table 43 are rotatably connected to synchronous pulleys, which are fixedly connected to each other by a synchronous belt 44. The support frame 4 is fixedly connected to the synchronous belt 44 by screws. Both sides of the support frame 4 are rotatably installed with two sets of limit wheels 45. The conveyor table 43 is provided with a stepped groove 46 that rolls against the limit wheels 45. The rolling contact between the limit wheel 45 and the stepped groove 46 is used to achieve stable horizontal feeding of the support frame 4, ensuring precise docking of the two ends of the semiconductor valve with the clamping cover 2. The conveyor table 43 is equipped with a drive motor 47 that drives the corresponding synchronous wheel to rotate by bolts. The drive motor 47 drives the synchronous wheel to cooperate with the synchronous belt 44 to carry multiple support frames 4 to rotate in a ring, which is used to support and feed the semiconductor valve one by one and automatically unload it.

[0028] Example 3: Please refer to Figures 1-9 As shown, this invention also proposes a high-purity water intelligent cleaning process for semiconductor ultrapure gas valve cavities, comprising the following steps: Step 1: Precise Positioning and Conveying of Multiple Specification Valves: The cleaning chamber 1 is placed in a Class 100 cleanroom, with gripping robotic arms on both sides for loading and unloading semiconductor valves from ultrapure gas pipelines used in semiconductor manufacturing. The drive motor 47 drives the synchronous pulley and synchronous belt 44 to carry multiple support frames 4 in a circular rotation. During the rotation, the gripping robotic arms grab the semiconductor valves to be cleaned and place them on the support frames 4. The pipe sections on both sides of the semiconductor valves are placed on the corresponding two sets of elastic sleeves 42. For semiconductor valves of different sizes, the elastic sleeves 42 of different diameters are replaced to help the semiconductor valve axis and the clamping cover 2 axis to be at the same height, so as to achieve precise, non-damaging and sealed positioning and docking of semiconductor valves of different specifications. This prevents insufficient cleaning or leakage of internal high-purity water caused by displacement of the semiconductor valves during the cleaning process. Then, multiple semiconductor valves are intermittently conveyed at equal distances. Step 2: Full-flow swirling flushing of the inner cavity and synchronous rinsing of the outer surface: When the centerline of the semiconductor valve coincides with the centerline of the clamping cover 2, the electric push rod 14 pushes the corresponding moving plate 11 to move horizontally. Another set of moving plates 11, combined with the guide wheel 12 and the transmission belt 13, move synchronously relative to each other, causing the two sets of clamping covers 2 to clamp the two ends of the semiconductor valve. High-purity water with a resistance ≥18.24MΩ·cm and a temperature of 25℃, produced by the external high-purity water preparation and supply unit, is injected into the inlet volute 25. Then, it is sprayed out sequentially from the inlet pipe 21, clamping cover 2, semiconductor valve inner cavity, clamping cover 2, outlet pipe 22, outlet hose 28 and shower head 23 to the outer surface of the semiconductor valve. The high-purity water completely submerges the inner cavity of the semiconductor valve, realizing full-flow ion desorption. The water flow speed is set within the range of 0.5-3.0m / s to ensure sufficient contact between water molecules and the inner cavity of the semiconductor valve, improve the efficiency of metal ion desorption, and remove impurities from the inner cavity surface. During the injection of high-purity water, the impeller 26 is driven to rotate, which in turn drives the spiral blades 24 to rotate inside the inlet pipe 21. This causes the high-purity water entering the inner cavity of the semiconductor valve to flow in a synchronous spiral shape. Combined with the fact that the distance between the outer wall of the rotating rod 27 and the inner wall of the inlet pipe 21 gradually decreases from the inlet volute 25 to the clamping cover 2, the flow rate of the high-purity water entering the inner cavity of the semiconductor valve increases while strengthening the wall-adhering swirling intensity. This flushes the flow channels, grooves and other easily contaminated parts of the inner cavity of the semiconductor valve, avoiding the problem of cleaning dead corners that cannot reach the ultrapure water. Subsequently, the waterproof motor 15, combined with the gear and gear ring, drives the corresponding clamping cover 2 to rotate, and the rotation direction is opposite to the high-purity water swirling direction, causing the semiconductor valve to rotate in the opposite direction, further increasing the swirling flushing effect in the inner cavity, while simultaneously removing impurities from the outer surface in a comprehensive and thorough manner with the high-purity water sprayed from the shower head 23. Maintaining a stable flow rate and continuous supply of high-purity water ensures full contact between the high-purity water and the surface of the semiconductor valve. Through the ion desorption mechanism, trace metal ions such as sodium, iron, and copper on the surface of the chamber are desorbed and complexed. The complexed metal ions are carried away with the continuous flow of ultrapure water. The cleaning time is detected by an external control system, and the flow rate parameters are monitored in real time throughout the process by a flow rate sensor. The system automatically adjusts when there is a deviation. Step 3: Nitrogen Cyclone Purging and Drying of the Inner Cavity: After the semiconductor valve is cleaned, the two sets of moving plates 11 move in opposite directions, and multiple semiconductor valves are intermittently translated, causing the two sets of clamping covers 2 to clamp and rinse the next semiconductor valve. At the same time, the two sets of sealing abutment plates 33 clamp the cleaned semiconductor valve on both sides. High-purity nitrogen is injected into the semiconductor valve through the air inlet pipe 3, and combined with the rotating nozzle 32 for cyclone purging, and collected and reused through the return air pipe 31, so that the high-purity water in the inner cavity of the cleaned semiconductor valve is completely drained, with no droplets remaining, and ions in the residual water are prevented from being re-adsorbed on the inner surface of the semiconductor valve. The residual particulate matter on the surface of the semiconductor valve is <1 particle / ml; single metal ion <10ppt; TOC <100ppt. Finally, the semiconductor valve is unloaded and sealed in a Class 100 cleanroom environment by a gripping robotic arm.

[0029] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A high-purity water intelligent cleaning device for semiconductor ultrapure gas valve chambers, comprising a cleaning chamber (1) with material inlets on both sides, characterized in that, The cleaning chamber (1) is equipped with a cleaning assembly for clamping the semiconductor valve and swirling and flushing its inner wall and rinsing its outer wall, a feeding assembly for equidistantly conveying the semiconductor valve and assisting the cleaning assembly in precise docking and clamping, and a purging assembly for cleaning the residual high-purity water in the inner cavity of the semiconductor valve. The cleaning assembly includes two sets of clamping covers (2) with a trumpet-shaped structure, an inlet pipe (21) and an outlet pipe (22) rotatably connected to the corresponding clamping cover (2) pipe section, and a shower head (23) that cooperates with the outlet pipe (22). The inlet pipe (21) is equipped with a spiral blade (24).

2. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 1, characterized in that, The free end of the liquid inlet pipe (21) is fixedly connected to the liquid inlet volute (25), and an impeller (26) is provided inside the liquid inlet volute (25). The blades of the impeller (26) are inclined. A rotating rod (27) is rotatably connected to the liquid inlet volute (25) and fixedly connected to the impeller (26) and the spiral blade (24). The distance between the outer wall of the rotating rod (27) and the inner wall of the liquid inlet pipe (21) gradually decreases from the direction of the liquid inlet volute (25) to the clamping cover (2).

3. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 1, characterized in that, The shower head (23) is fixed to the top of the cleaning box (1), and the shower head (23) and the free end of the liquid outlet pipe (22) are fixedly connected through the liquid outlet hose (28). An elastic pad is embedded in the conical inner wall of the clamping cover (2), and a flow rate sensor is installed on the liquid outlet pipe (22).

4. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 1, characterized in that, The cleaning chamber (1) is equipped with two sets of movable plates (11) that are fixedly connected to the corresponding inlet pipe (21) and outlet pipe (22). The cleaning chamber (1) is fixedly connected with two sets of guide rods that are slidably connected to the movable plates (11). Guide wheels (12) are rotatably installed on both sides of the cleaning chamber (1), and the guide wheels (12) are connected to each other by a transmission belt (13). Both sets of movable plates (11) are fixedly connected to the transmission belt (13), and the two fixed connection points are located on both sides of the guide wheels (12). One set of movable plates (11) is installed with an electric push rod (14) between it and the inner wall of the cleaning chamber (1).

5. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 4, characterized in that, A waterproof motor (15) is bolted to one of the movable plates (11), and a gear is installed at the output end of the waterproof motor (15). A gear ring that meshes with the gear is fixedly installed on the pipe section of the clamping cover (2).

6. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 4, characterized in that, The purging assembly includes an air inlet pipe (3) and a return air pipe (31) fixedly connected to the corresponding moving plate (11). A rotating nozzle (32) is rotatably installed at one end of the air inlet pipe (3). A sealing abutment plate (33) is slidably connected to both the air inlet pipe (3) and the return air pipe (31). A spring (34) is fixedly installed between the sealing abutment plate (33) and the moving plate (11). A one-way valve is installed inside the air inlet pipe (3), the return air pipe (31), and the clamping cover (2) pipe section.

7. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 1, characterized in that, The feeding assembly includes multiple equally spaced support frames (4), and two sets of support wheels (41) are rotatably connected to both sides of the support frame (4). An elastic sleeve (42) is fitted on the annular outer wall of the support wheel (41). The support wheel (41) has a waist drum-shaped structure that is thick in the middle and thin at both ends.

8. The high-purity water intelligent cleaning device for the semiconductor ultrapure gas valve cavity according to claim 7, characterized in that, The cleaning box (1) is fixedly connected to a conveyor platform (43) that is slidably connected to a support frame (4). Both sides of the conveyor platform (43) are rotatably connected to synchronous pulleys. The synchronous pulleys are fixedly connected to each other by a synchronous belt (44). The support frame (4) is fixedly connected to the synchronous belt (44) by screws. Both sides of the support frame (4) are rotatably installed with two sets of limit wheels (45). The conveyor platform (43) has a stepped groove (46) that rolls against the limit wheels (45). The conveyor platform (43) is bolted with a drive motor (47) that drives the corresponding synchronous pulley to rotate.

9. A high-purity water intelligent cleaning process for semiconductor ultrapure gas valve cavities, employing the high-purity water intelligent cleaning device for semiconductor ultrapure gas valve cavities as described in any one of claims 1-8, characterized in that... Includes the following steps: Step 1: Precise positioning and conveying of multi-specification valves: The drive motor (47) drives the support frame (4) to rotate in a ring, placing the semiconductor valve tube section in the elastic sleeve (42) of the appropriate specification, so that the semiconductor valve and the clamping cover (2) are at the same height, which assists in subsequent sealing, positioning and docking, and then the semiconductor valve is conveyed intermittently at equal distances; Step 2: Full-flow swirling flushing of the inner cavity and simultaneous rinsing of the outer surface: Two sets of clamping covers (2) clamp the end of the semiconductor valve. High-purity water with a resistance ≥18.24MΩ·cm (25℃) is injected into the inner cavity of the semiconductor valve through the inlet volute (25) to achieve full-flow ion desorption. The water flow velocity is in the range of 0.5-3.0m / s. The impeller (26) drives the high-purity water to flow in a spiral shape. With the change of the flow channel diameter, the swirling intensity against the wall is increased. The semiconductor valve rotates in the opposite direction to strengthen the flushing of the inner cavity. At the same time, the shower head (23) simultaneously rinses the outer surface of the valve to achieve comprehensive cleaning without dead angles inside and out. Step 3: Nitrogen Cyclone Purging and Drying of the Inner Cavity: The semiconductor valve is intermittently moved to the drying station, the sealing contact plate (33) clamps the valve, high-purity nitrogen is injected into the air inlet pipe (3) and cycloneeds the inner cavity through the rotating nozzle (32), and the nitrogen is recovered by the return air pipe (31) to achieve no liquid droplet residue in the inner cavity, and the residual particulate matter on the surface of the semiconductor valve is <1 particle / ml; single metal ion <10ppt; TOC <100ppt.

Images