Three-dimensional memory device

Abstract

The invention relates to a three-dimensional memory device. A memory device includes: a substrate including a first connection region and a second connection region arranged in a first horizontal direction; an electrode structure including a word line vertically stacked on the substrate and a dummy word line vertically stacked on the word line; drain selection lines disposed in the drain selection line layer on the electrode structure and extending parallel to each other in a first horizontal direction; drain contacts respectively connected to the drain selection lines in the first connection regions; and dummy contacts vertically extending through the drain selection lines in the second connection region, and connected to the dummy word lines, respectively. The dummy contacts are provided in a plurality of rows arranged in a second horizontal direction perpendicular to the first horizontal direction, and the dummy contacts commonly connected to one of the dummy word lines are provided in a single row.

Description

Technical Field

[0001] This disclosure relates to semiconductor technology, and more specifically, to three-dimensional memory devices. Background Technology

[0002] Memory devices with two-dimensional or planar structures have been developed to store more data in the same area using fine patterning processes. However, as circuit linewidths become narrower due to the need for high integration, interference between memory cells worsens, leading to various limitations such as performance degradation. Of course, in addition to these structural limitations, there is also the issue of needing to introduce expensive equipment for patterning fine linewidths, which inevitably increases manufacturing costs.

[0003] As an alternative to overcoming these limitations of two-dimensional memory devices, three-dimensional memory devices have been proposed. The advantage of three-dimensional memory devices lies in the fact that by increasing the number of stacked memory cells in the vertical direction, a larger capacity can be achieved within the same area, thus providing high performance and excellent power efficiency.

[0004] In order to independently apply electrical signals to electrodes located at different heights in a three-dimensional memory device, contacts should be connected to the electrodes separately, and various technologies are being developed for this purpose. Summary of the Invention

[0005] The embodiments of this disclosure present an improved three-dimensional memory device.

[0006] In an embodiment, a memory device may include: a substrate including a first connection region and a second connection region arranged in a first horizontal direction; an electrode structure including a plurality of word lines vertically stacked on the substrate and a plurality of dummy word lines vertically stacked on the plurality of word lines; a plurality of drain select lines extending in a first drain select line layer on the electrode structure in a first horizontal direction; a plurality of drain contacts respectively connected to the plurality of drain select lines in the first connection region; and a plurality of dummy contacts extending vertically through the plurality of drain select lines in a second connection region and respectively connected to the plurality of dummy word lines, wherein the plurality of dummy contacts are arranged in multiple rows in a second horizontal direction perpendicular to the first horizontal direction, and the dummy contacts that are commonly connected to one of the plurality of dummy word lines are arranged in a single row parallel to the first horizontal direction.

[0007] In an embodiment, a memory device may include: a substrate including a first connection region and a second connection region disposed in a first horizontal direction; an electrode structure including a plurality of word lines vertically stacked on the substrate and a plurality of dummy word lines vertically stacked on the plurality of word lines; a plurality of drain select lines extending parallel to each other in a drain select line layer on the electrode structure in a first horizontal direction, and each drain select line including a first pad segment disposed in a first connection region and a second pad segment disposed in a second connection region; a plurality of drain contacts respectively connected to the first pad segments of the plurality of drain select lines; and a plurality of dummy contacts extending in a vertical direction through one of the second pad segments of the plurality of drain select lines and respectively connected to the plurality of dummy word lines, wherein the plurality of dummy contacts are arranged in multiple rows in a second horizontal direction perpendicular to the first horizontal direction, and the dummy contacts in each row of the plurality of rows are disposed on a line along the first horizontal direction and are commonly connected to at least two of the dummy contacts of one of the plurality of dummy word lines disposed in one row of the plurality of rows.

[0008] In an embodiment, a memory device may include: a substrate including a cell region and a connection region extending from the cell region in a row direction; an electrode structure including a plurality of word lines vertically stacked on the substrate and a plurality of dummy word lines vertically stacked on the plurality of word lines; a plurality of drain select lines extending in a row direction in a first drain select line layer on the electrode structure, and each drain select line including an electrode segment disposed in the cell region and a pad segment disposed in the connection region; a plurality of drain contacts respectively connected to the pad segments of the plurality of drain select lines in the connection region; and a plurality of dummy contacts extending vertically through the pad segments of the plurality of drain select lines in the connection region and respectively connected to the plurality of dummy word lines, wherein, when viewed in a plan view, the plurality of dummy contacts are disposed in a different row than the plurality of drain contacts.

[0009] According to embodiments of this disclosure, since the dummy word line connection wiring can be configured to extend in the same direction as the drain select line connection wiring, the number of dummy word line connection wirings can be increased without reducing the wiring spacing or forming additional wiring layers. By increasing the number of dummy word line connection wirings, the number of dummy word lines segmented by the isolation insulating pattern can be increased, and the process allowance in the etching process forming the isolation insulating pattern can be improved. Attached Figure Description

[0010] Figure 1 This is a plan view of a memory device according to an embodiment of the present disclosure.

[0011] Figure 2 It is along Figure 1 A cross-sectional view taken from line A-A'.

[0012] Figure 3 It is along Figure 1 A cross-sectional view taken from line B-B'.

[0013] Figure 4 It is along Figure 1 A cross-sectional view taken from line C-C'.

[0014] Figure 5 It is along Figure 1 A cross-sectional view taken from line D-D'.

[0015] Figure 6 It is along Figure 1 A cross-sectional view taken from line E-E'.

[0016] Figure 7 It is along Figure 1 The cross-sectional view taken by line F-F'.

[0017] Figure 8 It is along Figure 1 A cross-sectional view taken from line G-G'.

[0018] Figure 9 It is shown Figure 1 A plan view of the drain selection line and the first isolation insulation pattern, the second isolation insulation pattern and the third isolation insulation pattern.

[0019] Figure 10 It is shown Figure 1 A plan view of the wiring for dummy contacts and dummy word lines.

[0020] Figure 11 This is a plan view of a memory device according to an embodiment of the present disclosure.

[0021] Figure 12 It is shown Figure 11 A plan view of the drain contact and the dummy contact.

[0022] Figure 13 This is a plan view of a memory device according to an embodiment of the present disclosure.

[0023] Figure 14 It is shown Figure 13 A plan view of the drain contact and the dummy contact.

[0024] Figure 15 This is a plan view of a memory device according to an embodiment of the present disclosure.

[0025] Figure 16 It is shown Figure 15 A plan view of the drain selection line and the isolation insulation pattern.

[0026] Figure 17This is a plan view of a memory device according to an embodiment of the present disclosure.

[0027] Figure 18 It is along Figure 17 A cross-sectional view taken by line H-H'.

[0028] Figure 19 It is shown Figure 17 A plan view of the drain selection line and the isolation insulation pattern.

[0029] Figure 20 It is shown Figure 17 A plan view of the drain contacts, dummy contacts, and dummy word lines.

[0030] Figure 21 This is a plan view of a memory device according to an embodiment of the present disclosure.

[0031] Figure 22 It is shown Figure 21 A plan view of the drain selection line and the isolation insulation pattern.

[0032] Figure 23 This is a cross-sectional view of a memory device according to an embodiment of the present disclosure. Detailed Implementation

[0033] In the following description, various embodiments of this disclosure will be described in detail with reference to the accompanying drawings. In the following description of examples or embodiments of this disclosure, reference will be made to the accompanying drawings, which illustrate specific examples or embodiments that may be implemented, and wherein the same reference numerals and designations may be used to refer to the same or similar components, even if they are shown in different drawings. Furthermore, in the following description of examples or embodiments of the invention, detailed descriptions of well-known functions and components included herein will be omitted when it is determined that such description may make the subject matter of some embodiments of the invention less clear. Unless these terms are used with the term “only,” terms such as “comprising,” “having,” “including,” “constituting,” “made of,” and “formed from” as used herein are generally intended to allow for the addition of other components. As used herein, the singular forms are intended to include the plural forms unless the context clearly indicates otherwise.

[0034] In this document, terms such as “first,” “second,” “A,” “B,” “(A),” or “(B)” may be used to describe elements of the invention. Each of these terms is not intended to define the nature, order, sequence, or number of elements, but is only used to distinguish the corresponding element from other elements.

[0035] When referring to the first element and the second element as "connected or joined," "in contact or overlapping," etc., it should be interpreted as meaning that the first element can not only be "directly connected or joined" or "directly contact or overlap" with the second element, but also that a third element can be "inserted" between the first and second elements, or that the first and second elements can be "connected or joined," "in contact or overlapping," etc., with each other via a fourth element. Here, the second element can be included in at least one of two or more elements that are "connected or joined," "in contact or overlapping," etc., with each other.

[0036] When using time-relative terms such as “after,” “following,” “next,” “before,” etc., to describe the process or operation of an element or configuration, or the flow or step in an operation, treatment, or manufacturing method, these terms may be used to describe discontinuous or non-sequential processes or operations unless used together with the terms “direct” or “immediate.”

[0037] Furthermore, when referring to any size, relative size, etc., it should be assumed that even without a specified description, the numerical values ​​or corresponding information of a component or feature (e.g., grade, range, etc.) include tolerances or error ranges that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.). In addition, the term "can" fully encompasses all the meanings of the term "able to".

[0038] In the following, various embodiments of this disclosure will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 2 It is along Figure 1 A cross-sectional view taken from line A-A'. Figure 3 It is along Figure 1 A cross-sectional view taken from line B-B'. Figure 4 It is along Figure 1 A cross-sectional view taken from line C-C'. Figure 5 It is along Figure 1 A cross-sectional view taken from line D-D'. Figure 6 It is along Figure 1 A cross-sectional view taken from line E-E'. Figure 7 It is along Figure 1 A cross-sectional view taken by line F-F'. Figure 8 It is along Figure 1 A cross-sectional view taken from line G-G'. Figure 9 It is shown Figure 1 A plan view of the drain selection line and the first, second, and third isolation insulation patterns. Figure 10 It is shown Figure 1 A plan view of the wiring for dummy contacts and dummy word lines.

[0040] Reference Figures 1 to 8 The electrode structure ST is disposed on the substrate 10.

[0041] The substrate 10 may be made of a semiconductor material. For example, the semiconductor material may include at least one of silicon (Si), germanium (Ge), silicon-germanium (SiGe), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), aluminum gallium arsenide (AlGaAs), or combinations thereof. The substrate 10 includes a cell region CAR and a connection region CNR extending from the cell region CAR in a first horizontal direction HD1. The connection region CNR includes a first connection region CNR1 and a second connection region CNR2 aligned in the first horizontal direction HD1. The first connection region CNR1 is positioned closer to the cell region CAR than the second connection region CNR2.

[0042] The first horizontal direction HD1 can also be defined as the word line direction or the row direction. The second horizontal direction HD2, which is perpendicular to the first horizontal direction HD1, can also be defined as the bit line direction or the column direction.

[0043] The electrode structure ST extends from the cell region CAR to the connection region CNR in the first horizontal direction HD1. The electrode structure ST includes multiple word lines WL and multiple dummy word lines DWLa, DWLb, DWLc, and DWLd. The electrode structure ST may also include a source select line SSL. The source select line SSL may be disposed between the lowest word line WL and the substrate 10.

[0044] Multiple drain selection lines DSL1, DSL2, DSL3 and DSL4 and multiple dummy patterns DP can be set on or above the electrode structure ST.

[0045] Drain selection lines DSL1, DSL2, DSL3 and DSL4 include the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3 and the fourth drain selection line DSL4.

[0046] The first drain selection line DSL1 may include a first lower drain selection line DSL1a, a first intermediate drain selection line DSL1b above or on the first lower drain selection line DSL1a, and a first upper drain selection line DSL1c above or on the first intermediate drain selection line DSL1b. The second drain selection line DSL2 may include a second lower drain selection line DSL2a, a second intermediate drain selection line DSL2b above or on the second lower drain selection line DSL2a, and a second upper drain selection line DSL2c above or on the second intermediate drain selection line DSL2b. The third drain selection line DSL3 may include a third lower drain selection line DSL3a, a third intermediate drain selection line DSL3b above or on the third lower drain selection line DSL3a, and a third upper drain selection line DSL3c above or on the third intermediate drain selection line DSL3b. The fourth drain selection line DSL4 may include a fourth lower drain selection line DSL4a, a fourth intermediate drain selection line DSL4b above or on the fourth lower drain selection line DSL4a, and a fourth upper drain selection line DSL4c above or on the fourth intermediate drain selection line DSL4b. The dummy pattern DP may include a lower dummy pattern DP1, an intermediate dummy pattern DP2 above or on the lower dummy pattern DP1, and an upper dummy pattern DP3 above or on the intermediate dummy pattern DP2.

[0047] The first lower drain selection line DSL1a, the second lower drain selection line DSL2a, the third lower drain selection line DSL3a, and the fourth lower drain selection line DSL4a are disposed in the lower drain selection line layer and extend parallel to each other in the first horizontal direction HD1. The first intermediate drain selection line DSL1b, the second intermediate drain selection line DSL2b, the third intermediate drain selection line DSL3b, and the fourth intermediate drain selection line DSL4b are disposed in the intermediate drain selection line layer and extend parallel to each other in the first horizontal direction HD1. The first upper drain selection line DSL1c, the second upper drain selection line DSL2c, the third upper drain selection line DSL3c, and the fourth upper drain selection line DSL4c are disposed in the upper drain selection line layer and extend parallel to each other in the first horizontal direction HD1.

[0048] Although the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 are arranged in three layers, the embodiments of this disclosure are not limited thereto. The drain selection lines may be arranged in only one layer or at least two layers.

[0049] The source select line SSL, word line WL, dummy word lines DWLa, DWLb, DWLc and DWLd, first drain select line DSL1, second drain select line DSL2, third drain select line DSL3 and fourth drain select line DSL4, and dummy pattern DP may include a conductive material. The conductive material may include at least one selected from doped semiconductors, metals, conductive metal nitrides or transition metals.

[0050] The source select line SSL, word line WL, dummy word lines DWLa, DWLb, DWLc and DWLd, first drain select line DSL1, second drain select line DSL2, third drain select line DSL3 and fourth drain select line DSL4, and dummy pattern DP may be alternately stacked with multiple interlayer insulating layers 24. The interlayer insulating layers 24 may include silicon oxide.

[0051] A first isolation pattern IS1 and a second isolation pattern IS2 may be disposed on the substrate 10. The first isolation pattern IS1 and the second isolation pattern IS2 may extend parallel to each other in a first horizontal direction HD1 and may be spaced apart in a second horizontal direction HD2. An electrode structure ST, a first drain selection line DSL1, a second drain selection line DSL2, a third drain selection line DSL3, and a fourth drain selection line DSL4, as well as a dummy pattern DP, may be disposed between the first isolation pattern IS1 and the second isolation pattern IS2. The first isolation pattern IS1 and the second isolation pattern IS2 may respectively contact two opposite side surfaces of the electrode structure ST in the second horizontal direction HD2.

[0052] The first isolation pattern IS1 and the second isolation pattern IS2 may include an insulating layer. The first isolation pattern IS1 and the second isolation pattern IS2 may also include a common source plug (not shown) connected to a common source region of the substrate 10. In one embodiment, in each of the first isolation pattern IS1 and the second isolation pattern IS2, the common source plug may be configured as a plate shape extending in the first horizontal direction HD1, and the insulating layer may be configured as a spacer shape between the electrode structure ST, the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4, and the dummy pattern DP and the common source plug. In another embodiment, in each of the first isolation pattern IS1 and the second isolation pattern IS2, the insulating layer may be configured as a plate shape extending in the first horizontal direction HD1, and the common source plug may be configured as a plug shape penetrating the insulating layer to be partially connected to the common source region of the substrate 10.

[0053] The first insulating layer 90 may be disposed on or above the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4, as well as the dummy pattern DP, to cover the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4, as well as the dummy pattern DP. The first isolation pattern IS1 and the second isolation pattern IS2 may penetrate the first insulating layer 90 in the vertical direction VD.

[0054] A first insulating pattern 41 is disposed between the first drain selection line DSL1 and the second drain selection line DSL2. The first insulating pattern 41 can insulate the first drain selection line DSL1 and the second drain selection line DSL2.

[0055] The second insulating pattern 42 is disposed between the second drain selection line DSL2 and the third drain selection line DSL3. The second insulating pattern 42 can insulate the second drain selection line DSL2 and the third drain selection line DSL3.

[0056] The third isolation insulation pattern 43 is disposed between the third drain selection line DSL3 and the fourth drain selection line DSL4. The third isolation insulation pattern 43 can insulate the third drain selection line DSL3 and the fourth drain selection line DSL4.

[0057] A fourth insulating pattern 44 is disposed between the first drain selection line DSL1 and the dummy pattern DP. The fourth insulating pattern 44 can insulate the first drain selection line DSL1 and the dummy pattern DP.

[0058] The first insulating pattern 41, the second insulating pattern 42, the third insulating pattern 43, and the fourth insulating pattern 44 extend in the vertical direction VD and penetrate the dummy word lines DWLa, DWLb, DWLc, and DWLd. The dummy word lines DWLa, DWLb, DWLc, and DWLd are divided by the first insulating pattern 41, the second insulating pattern 42, the third insulating pattern 43, and the fourth insulating pattern 44. The first insulating pattern 41, the second insulating pattern 42, the third insulating pattern 43, and the fourth insulating pattern 44 penetrate the first insulating layer 90 in the vertical direction VD.

[0059] Reference Figure 9 Each of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 includes an electrode segment ES, a first pad segment PS1, and a second pad segment PS2.

[0060] The electrode segments ES of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4 are located in the cell region CAR. The first pad segment PS1 of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4 is located in the first connection region CNR1. The second pad segment PS2 of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4 is located in the second connection region CNR2.

[0061] In the cell region CAR, the electrode segments ES of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 can be arranged on a single line along the second horizontal direction HD2. The electrode segments ES of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 can have the same dimensions in the second horizontal direction HD2.

[0062] In the first connection area CNR1, the first pad segment PS1 of the first drain selection line DSL1, the first pad segment PS1 of the second drain selection line DSL2, the first pad segment PS1 of the third drain selection line DSL3, and the first pad segment PS1 of the fourth drain selection line DSL4 can be arranged on a line along the second horizontal direction HD2.

[0063] In each of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4, the dimension of the first pad segment PS1 in the second horizontal direction HD2 can be the same as the dimension of the electrode segment ES in the second horizontal direction HD2. For example, in the fourth drain select line DSL4, the dimension Wa of the electrode segment ES in the second horizontal direction HD2 and the dimension Wa of the first pad segment PS1 in the second horizontal direction HD2 can be the same.

[0064] In the second connection area CNR2, the second pad segment PS2 of the first drain selection line DSL1, the second pad segment PS2 of the second drain selection line DSL2, the second pad segment PS2 of the third drain selection line DSL3, and the second pad segment PS2 of the fourth drain selection line DSL4 can be arranged on a line along the first horizontal direction HD1.

[0065] In each of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4, the maximum size of the second pad segment PS2 in the second horizontal direction HD2 can be greater than the size of the first pad segment PS1 in the second horizontal direction HD2. For example, in the fourth drain select line DSL4, the size of the first pad segment PS1 in the second horizontal direction HD2 can be Wa, and the maximum size of the second pad segment PS2 in the second horizontal direction HD2 can be Wb4, where Wb4 is greater than Wa.

[0066] The maximum size of the second pad segment PS2 of the first drain select line DSL1 in the second horizontal direction HD2 can be greater than the maximum size of the second pad segment PS2 of the second drain select line DSL2 in the second horizontal direction HD2; the maximum size of the second pad segment PS2 of the second drain select line DSL2 in the second horizontal direction HD2 can be greater than the maximum size of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2; the maximum size of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2 can be greater than the maximum size of the second pad segment PS2 of the fourth drain select line DSL4 in the second horizontal direction HD2. For example, when the maximum dimension of the second pad segment PS2 of the first drain select line DSL1 in the second horizontal direction HD2 is Wb1, the maximum dimension of the second pad segment PS2 of the second drain select line DSL2 in the second horizontal direction HD2 is Wb2, the maximum dimension of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2 is Wb3, and the maximum dimension of the second pad segment PS2 of the fourth drain select line DSL4 in the second horizontal direction HD2 is Wb4, the relationship Wb1>Wb2>Wb3>Wb4 can be satisfied.

[0067] Refer to Figures 1 to 6 Drain contacts 51a, 51b, 51c, 52a, 52b, 52c, 53a, 53b, 53c, 54a, 54b, and 54c are disposed in the first connection area CNR1. Drain contacts 51a, 51b, 51c, 52a, 52b, 52c, 53a, 53b, 53c, 54a, 54b, and 54c include first drain contacts 51a, 51b, and 51c, second drain contacts 52a, 52b, and 52c, third drain contacts 53a, 53b, and 53c, and fourth drain contacts 54a, 54b, and 54c.

[0068] Refer to Figures 1 to 3First drain contacts 51a, 51b, and 51c extend in the vertical direction VD and are respectively connected to the first drain select line DSL1. Specifically, first drain contact 51a is connected to the first lower drain select line DSL1a, first drain contact 51b is connected to the first intermediate drain select line DSL1b, and first drain contact 51c is connected to the first upper drain select line DSL1c. As measured from the top surface of the substrate 10, the bottom surfaces of the first drain contacts 51a, 51b, and 51c can be set at different heights. Specifically, the bottom surface of the first drain contact 51a can contact the pad section of the first lower drain select line DSL1a, the bottom surface of the first drain contact 51b can contact the pad section of the first intermediate drain select line DSL1b, and the bottom surface of the first drain contact 51c can contact the pad section of the first upper drain select line DSL1c.

[0069] The first insulating spacer S1 may define and be disposed on the side surfaces of the first drain contacts 51a, 51b and 51c, respectively, surrounding the side surfaces of the first drain contacts 51a, 51b and 51c. The first drain contacts 51a, 51b and 51c may be disposed on a line along the first horizontal direction HD1.

[0070] Refer to Figure 1 , Figure 2 and Figure 4 The second drain contacts 52a, 52b, and 52c extend in the vertical direction VD and are respectively connected to the second drain selection line DSL2. Specifically, the second drain contact 52a is connected to the second lower drain selection line DSL2a, the second drain contact 52b is connected to the second intermediate drain selection line DSL2b, and the second drain contact 52c is connected to the second upper drain selection line DSL2c. The bottom surfaces of the second drain contacts 52a, 52b, and 52c can be disposed at different heights from the top surface of the substrate 10. Specifically, the bottom surface of the second drain contact 52a can contact the pad section of the second lower drain selection line DSL2a, the bottom surface of the second drain contact 52b can contact the pad section of the second intermediate drain selection line DSL2b, and the bottom surface of the second drain contact 52c can contact the pad section of the second upper drain selection line DSL2c.

[0071] The second insulating spacer S2 may define and be disposed on the side surfaces of the second drain contacts 52a, 52b and 52c, respectively, surrounding the side surfaces of the second drain contacts 52a, 52b and 52c. The second drain contacts 52a, 52b and 52c may be disposed on a line along the first horizontal direction HD1.

[0072] Refer to Figure 1 , Figure 2 and Figure 5The third drain contacts 53a, 53b, and 53c extend in the vertical direction VD and are respectively connected to the third drain selection line DSL3. Specifically, the third drain contact 53a is connected to the third lower drain selection line DSL3a, the third drain contact 53b is connected to the third intermediate drain selection line DSL3b, and the third drain contact 53c is connected to the third upper drain selection line DSL3c. The bottom surfaces of the third drain contacts 53a, 53b, and 53c can be disposed at different heights from the top surface of the substrate 10. Specifically, the bottom surface of the third drain contact 53a can contact the pad area of ​​the third lower drain selection line DSL3a, the bottom surface of the third drain contact 53b can contact the pad area of ​​the third intermediate drain selection line DSL3b, and the bottom surface of the third drain contact 53c can contact the pad area of ​​the third upper drain selection line DSL3c.

[0073] The third insulating spacer S3 may define and be disposed on the side surfaces of the third drain contacts 53a, 53b and 53c, respectively, surrounding the side surfaces of the third drain contacts 53a, 53b and 53c. The third drain contacts 53a, 53b and 53c may be disposed on a line along the first horizontal direction HD1.

[0074] Refer to Figure 1 , Figure 2 and Figure 6 The fourth drain contacts 54a, 54b, and 54c extend in the vertical direction VD and are respectively connected to the fourth drain selection line DSL4. Specifically, the fourth drain contact 54a is connected to the fourth lower drain selection line DSL4a, the fourth drain contact 54b is connected to the fourth intermediate drain selection line DSL4b, and the fourth drain contact 54c is connected to the fourth upper drain selection line DSL4c. The bottom surfaces of the fourth drain contacts 54a, 54b, and 54c can be disposed at different heights from the top surface of the substrate 10. Specifically, the bottom surface of the fourth drain contact 54a can contact the pad area of ​​the fourth lower drain selection line DSL4a, the bottom surface of the fourth drain contact 54b can contact the pad area of ​​the fourth intermediate drain selection line DSL4b, and the bottom surface of the fourth drain contact 54c can contact the pad area of ​​the fourth upper drain selection line DSL4c.

[0075] A fourth insulating spacer S4 may define and be disposed on the side surfaces of the fourth drain contacts 54a, 54b, and 54c, respectively surrounding the side surfaces of the fourth drain contacts 54a, 54b, and 54c. The fourth drain contacts 54a, 54b, and 54c may be disposed on a line along a first horizontal direction HD1.

[0076] Refer to Figures 1 to 6A second insulating layer 92 may be disposed on a first insulating layer 90, and a first wiring layer may be formed on a second insulating layer 92. The first wiring layer includes multiple drain select line connection wirings 71, 72, 73, and 74. Drain select line connection wirings 71, 72, 73, and 74 may include a first drain select line connection wiring 71, a second drain select line connection wiring 72, a third drain select line connection wiring 73, and a fourth drain select line connection wiring 74.

[0077] The first drain selection line connection wiring 71, the second drain selection line connection wiring 72, the third drain selection line connection wiring 73, and the fourth drain selection line connection wiring 74 can extend across the second connection area CNR2 to the first connection area CNR1 in the first horizontal direction HD1.

[0078] Below the first drain selection line connection wiring 71, the first through-hole V1 can penetrate the second insulating layer 92 in the vertical direction VD and connect the first drain selection line connection wiring 71 to the first drain contacts 51a, 51b and 51c respectively. The first lower drain selection line DSL1a, the first intermediate drain selection line DSL1b and the first upper drain selection line DSL1c can be connected to the first drain selection line connection wiring 71 through the first drain contacts 51a, 51b and 51c and the first through-hole V1.

[0079] Below the second drain selection line connection wiring 72, the second through-hole V2 can penetrate the second insulating layer 92 in the vertical direction VD and connect the second drain selection line connection wiring 72 to the second drain contacts 52a, 52b, and 52c respectively. The second lower drain selection line DSL2a, the second intermediate drain selection line DSL2b, and the second upper drain selection line DSL2c can be connected to the second drain selection line connection wiring 72 through the second drain contacts 52a, 52b, and 52c and the second through-hole V2.

[0080] Below the third drain selection line connection wiring 73, the third through-hole V3 can penetrate the second insulating layer 92 in the vertical direction VD and connect the third drain selection line connection wiring 73 to the third drain contacts 53a, 53b, and 53c respectively. The third lower drain selection line DSL3a, the third intermediate drain selection line DSL3b, and the third upper drain selection line DSL3c can be connected to the third drain selection line connection wiring 73 through the third drain contacts 53a, 53b, and 53c and the third through-hole V3.

[0081] Below the fourth drain selection line connection wiring 74, the fourth through-hole V4 can penetrate the second insulating layer 92 in the vertical direction VD and connect the fourth drain selection line connection wiring 74 to the fourth drain contacts 54a, 54b, and 54c respectively. The fourth lower drain selection line DSL4a, the fourth intermediate drain selection line DSL4b, and the fourth upper drain selection line DSL4c can be connected to the fourth drain selection line connection wiring 74 through the fourth drain contacts 54a, 54b, and 54c and the fourth through-hole V4.

[0082] Refer to Figure 1 , Figure 7 , Figure 8 and Figure 9 Virtual contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d are configured in the second connection area CNR2. For example, in Figure 1 In the middle, the dummy contacts 61a to 61d, 62a to 62d, 63a to 63d and 64a to 64d are arranged in two rows on the second horizontal direction HD2.

[0083] The dummy contacts 61a to 61d, 62a to 62d, 63a to 63d and 64a to 64d include the first dummy contacts 61a to 61d, the second dummy contacts 62a to 62d, the third dummy contacts 63a to 63d and the fourth dummy contacts 64a to 64d.

[0084] The first dummy contacts 61a to 61d can extend through the first drain select line DSL1 in the vertical direction VD and can be connected to the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd, respectively. The first dummy contacts 61a to 61d can penetrate the second pad segment PS2 of the first drain select line DSL1 in the vertical direction VD. The fifth insulating spacer S5 can define and be disposed on the side surface of the first dummy contacts 61a to 61d to surround the side surface of the first dummy contacts 61a to 61d.

[0085] The second dummy contacts 62a to 62d can extend through the second drain select line DSL2 in the vertical direction VD, and can be connected to the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd, respectively. The second dummy contacts 62a to 62d can penetrate the second pad segment PS2 of the second drain select line DSL2 in the vertical direction VD. The sixth insulating spacer S6 can define and be disposed on the side surfaces of the second dummy contacts 62a to 62d to surround the side surfaces of the second dummy contacts 62a to 62d.

[0086] The third dummy contacts 63a to 63d can extend through the third drain select line DSL3 in the vertical direction VD, and can be connected to the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd, respectively. The third dummy contacts 63a to 63d can penetrate the second pad segment PS2 of the third drain select line DSL3 in the vertical direction VD. The seventh insulating spacer S7 can define and be disposed on the side surfaces of the third dummy contacts 63a to 63d to surround the side surfaces of the third dummy contacts 63a to 63d.

[0087] The fourth dummy contacts 64a to 64d may extend through the fourth drain select line DSL4 in the vertical direction VD and may be connected to the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd, respectively. The fourth dummy contacts 64a to 64d may penetrate the second pad segment PS2 of the fourth drain select line DSL4 in the vertical direction VD. An eighth insulating spacer S8 may define and be disposed on the side surfaces of the fourth dummy contacts 64a to 64d to surround the side surfaces of the fourth dummy contacts 64a to 64d.

[0088] One of the first dummy contacts 61a to 61d, one of the second dummy contacts 62a to 62d, one of the third dummy contacts 63a to 63d, and one of the fourth dummy contacts 64a to 64d can be jointly connected to each of the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd. Specifically, the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a can be jointly connected to the first dummy word line DWLa. The first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b can be jointly connected to the second dummy word line DWLb. The first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c can be jointly connected to the third dummy word line DWLc. The first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d can be connected together to the fourth dummy word line DWLd.

[0089] The first wiring layer includes dummy word line connection wirings 81, 82, 83, and 84. Dummy word line connection wirings 81, 82, 83, and 84 are disposed on the second insulating layer 92. Dummy word line connection wirings 81, 82, 83, and 84 may include a first dummy word line connection wiring 81, a second dummy word line connection wiring 82, a third dummy word line connection wiring 83, and a fourth dummy word line connection wiring 84.

[0090] A fifth through-hole V5, penetrating the second insulating layer 92 in the vertical direction VD, can be disposed below the first dummy word line connection wiring 81. The first dummy word line connection wiring 81 can be connected to the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a through the fifth through-hole V5.

[0091] The first dummy word line DWLa can be divided into multiple segments by the first insulating pattern 41, the second insulating pattern 42, the third insulating pattern 43, and the fourth insulating pattern 44. The first dummy word line connecting wiring 81 can be connected to the segmented segments of the first dummy word line DWLa through the fifth through hole V5 and the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a. Therefore, the segmented segments of the first dummy word line DWLa can be in an equipotential state.

[0092] A sixth through-hole V6, penetrating the second insulating layer 92 in the vertical direction VD, can be disposed below the second dummy word line connection wiring 82. The second dummy word line connection wiring 82 can be connected to the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b through the sixth through-hole V6.

[0093] The second dummy word line DWLb can be divided into multiple segments by the first isolation insulation pattern 41, the second isolation insulation pattern 42, the third isolation insulation pattern 43, and the fourth isolation insulation pattern 44. The second dummy word line connecting wiring 82 can be connected to the segmented segments of the second dummy word line DWLb through the sixth through-hole V6 and the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b. Therefore, the segmented segments of the second dummy word line DWLb can have an equipotential state.

[0094] A seventh through-hole V7, penetrating the second insulating layer 92 in the vertical direction VD, can be disposed below the third dummy word line connection wiring 83. The third dummy word line connection wiring 83 can be connected to the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c through the seventh through-hole V7.

[0095] The third dummy word line DWLc can be divided into multiple segments by the first isolation insulation pattern 41, the second isolation insulation pattern 42, the third isolation insulation pattern 43, and the fourth isolation insulation pattern 44. The third dummy word line connecting wiring 83 can be connected to the segmented segments of the third dummy word line DWLc through the seventh through-hole V7 and the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c. Therefore, the segmented segments of the third dummy word line DWLc can be at the same potential.

[0096] An eighth through-hole V8, penetrating the second insulating layer 92 in the vertical direction VD, can be disposed below the fourth dummy word line connection wiring 84. The fourth dummy word line connection wiring 84 can be connected to the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d through the eighth through-hole V8.

[0097] The fourth dummy word line DWLd can be divided into multiple segments by the first isolation insulation pattern 41, the second isolation insulation pattern 42, the third isolation insulation pattern 43, and the fourth isolation insulation pattern 44. The fourth dummy word line connecting wiring 84 can be connected to the segmented segments of the fourth dummy word line DWLd through the eighth through-hole V8 and the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d. Therefore, the segmented segments of the fourth dummy word line DWLd can be at the same potential.

[0098] Reference Figure 7 and Figure 10 Dummy contacts that are connected to one of the first dummy word line DWLa, the second dummy word line DWLb, the third dummy word line DWLc, and the fourth dummy word line DWLd can be arranged in the same row. In an embodiment, the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a that are connected to the first dummy word line DWLa, and the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b that are connected to the second dummy word line DWLb, can be arranged in a line along the first horizontal direction HD1 to form the first row R. <1> The first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c, which are connected together to the third dummy word line DWLc, and the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d, which are connected together to the fourth dummy word line DWLd, can be arranged on a line along the first horizontal direction HD1 to form the second row R. <2> .

[0099] The number of rows of dummy contacts may be less than the number of drain select lines included in each drain select line layer. Although the figures in this disclosure show four drain select lines and two rows of dummy contacts included in each drain select line layer, other embodiments may have different numbers of drain select lines and dummy contacts.

[0100] The first dummy word line connection wiring 81 may include a main line 81a extending in the first horizontal direction HD1 and a branch line 81b branching from the main line 81a. The second dummy word line connection wiring 82 may include a main line 82a extending in the first horizontal direction HD1 and a branch line 82b branching from the main line 82a.

[0101] The main line 81a of the first dummy word line connecting wiring 81 and the main line 82a of the second dummy word line connecting wiring 82 can be parallel to each other in the first horizontal direction HD1 and respectively set in the first row R. <1> Both sides.

[0102] Branch line 81b of the first dummy word line connecting wire 81 may branch from the main line 81a of the first dummy word line connecting wire 81 near the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a, and may be connected to the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a, respectively. Branch line 81b of the first dummy word line connecting wire 81 may have a shorter length connecting the main line 81a of the first dummy word line connecting wire 81 to the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a.

[0103] Branch line 82b of the second dummy word line connection wiring 82 may branch from the main line 82a of the second dummy word line connection wiring 82 near the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b, and may be connected to the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b, respectively. Branch line 82b of the second dummy word line connection wiring 82 may have a shorter length connecting the main line 82a of the second dummy word line connection wiring 82 to the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b.

[0104] The third dummy word line connection wiring 83 may include a main line 83a extending in the first horizontal direction HD1 and a branch line 83b branching from the main line 83a. The fourth dummy word line connection wiring 84 may include a main line 84a extending in the first horizontal direction HD1 and a branch line 84b branching from the main line 84a.

[0105] The main line 83a of the third dummy word line connection wiring 83 and the main line 84a of the fourth dummy word line connection wiring 84 can be parallel on the first horizontal direction HD1 and respectively set in the second row R. <2> Both sides.

[0106] Branch line 83b of the third dummy word line connection wiring 83 may branch from the main line 83a of the third dummy word line connection wiring 83 near the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c, and may be connected to the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c, respectively. Branch line 83b of the third dummy word line connection wiring 83 may have a shorter length connecting the main line 83a of the third dummy word line connection wiring 83 to the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c.

[0107] A branch line 84b of the fourth dummy word line connection wiring 84 may branch from the main line 84a of the fourth dummy word line connection wiring 84 near the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d, and may connect to the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d. The branch line 84b of the fourth dummy word line connection wiring 84 may have a shorter length connecting the main line 84a of the fourth dummy word line connection wiring 84 to the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d.

[0108] Refer to Figure 1 and Figure 3 Multiple cell plugs (CPs) may be disposed within a cell region (CAR). The cell plugs (CPs) may extend vertically into the substrate 10 through a first insulating layer 90, drain selection lines DSL1, DSL2, DSL3, or DSL4, and electrode structure ST. Each cell plug (CP) may include a channel layer CL and a memory layer ML. The channel layer CL may include a semiconductor material. For example, the channel layer CL may include polysilicon. The memory layer ML may have a straw or cylindrical shell shape surrounding the outer wall of the channel layer CL. The memory layer ML may include a tunnel insulating layer surrounding or covering the channel layer CL, a data storage layer surrounding or covering the tunnel insulating layer, and a barrier layer surrounding or covering the data storage layer.

[0109] Source select transistors can be configured in the region where the source select line SSL surrounds the cell plug CP. Memory cells can be configured in the region where the word line WL surrounds the cell plug CP. Dummy memory cells can be configured in the region where the dummy word lines DWLa, DWLb, DWLc, and DWLd surround the cell plug CP. Drain select transistors can be configured in the region where the drain select lines DSL1, DSL2, DSL3, and DSL4 surround the cell plug CP.

[0110] The first wiring layer includes a bit line BL. The bit line BL is disposed on the second insulating layer 92. A bit line contact BLC, penetrating the second insulating layer 92 in the vertical direction VD, is disposed below the bit line BL. The cell plug CP is connected to the bit line BL through the bit line contact BLC.

[0111] The first isolation insulating pattern 41, the second isolation insulating pattern 42, the third isolation insulating pattern 43, and the fourth isolation insulating pattern 44 can be formed by etching slits and filling the slits with insulating material. To prevent short circuits in the drain select lines, which should be insulated from each other, the target depth of the etching process used to form the slits should be increased to ensure process margin. As the target depth of the etching process used for the isolation insulating patterns increases, the number of dummy word lines to be segmented by the first isolation insulating pattern 41, the second isolation insulating pattern 42, the third isolation insulating pattern 43, and the fourth isolation insulating pattern 44, as well as the number of dummy word line connection traces connecting the segmented sections of the dummy word lines, needs to be increased. When the number of dummy word line connection traces increases, a routing bottleneck may occur, and it may be difficult to set up drain select line connection traces. The routing bottleneck can be solved by reducing the trace spacing or forming additional routing layers. However, when the trace spacing is reduced, the trace resistance may increase and lead to signal degradation; when additional routing layers are formed, the number of process steps may increase, and manufacturing costs may increase.

[0112] According to embodiments of this disclosure, dummy contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d are arranged in multiple rows spaced apart in the second horizontal direction HD2. By setting the dummy contacts connected to the same dummy word line in a single row, the main lines 81a, 82a, 83a, and 84a of the dummy word line connection wirings 81, 82, 83, and 84 can also extend parallel to the row of dummy contacts in the first horizontal direction HD1. Therefore, since the main lines 81a, 82a, 83a, and 84a of the dummy word line connection wirings 81, 82, 83, and 84 are arranged parallel to the drain selection line connection wirings 71, 72, 73, and 74 in the second connection area CNR2, wiring bottlenecks can be avoided without reducing wiring spacing or forming additional wiring layers. Furthermore, because the wiring bottleneck is addressed by utilizing the disclosed structural arrangement, the number of dummy word lines connecting the wiring can be increased, and the number of dummy word lines segmented by the first isolation insulating pattern 41, the second isolation insulating pattern 42, the third isolation insulating pattern 43, and the fourth isolation insulating pattern 44 can also be increased. Therefore, in the etching process that forms the slits for the pattern, the etch target depth of the isolation insulating pattern can be increased, thereby improving the etching allowance.

[0113] Refer to the above Figures 1 to 10 In the embodiments described in this disclosure, dummy contacts arranged in a row are connected to two dummy word lines, but the embodiments of this disclosure are not limited thereto. As will be noted below... Figures 11 to 14 The description states that dummy contacts connected to different dummy word lines can be set in different lines.

[0114] Figure 11 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 12 It is shown Figure 11 A plan view of the drain contact and the dummy contact.

[0115] Reference Figure 11 and Figure 12 Dummy contacts connected to the same dummy word line are arranged in the same row along the first horizontal direction HD1. Dummy contacts connected to different dummy word lines are arranged in different rows spaced apart on the second horizontal direction SD, which is perpendicular to the first horizontal direction FD.

[0116] Specifically, the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a, which are connected together to the first dummy word line, can be arranged on a line along the first horizontal direction HD1 to form the first row R. <1> The first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b, which are connected together to the second dummy word line, can be arranged on a line along the first horizontal direction HD1 to form the second row R. <2> The first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c, which are connected together to the third dummy word line, can be arranged on a line along the first horizontal direction HD1 to form the third row R. <3> .

[0117] The first dummy word line connection wiring 81 is connected to the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a connected to the first dummy word line. The second dummy word line connection wiring 82 is connected to the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b connected to the second dummy word line. The third dummy word line connection wiring 83 is connected to the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c connected to the third dummy word line. The first dummy word line connection wiring 81, the second dummy word line connection wiring 82, and the third dummy word line connection wiring 83 may be parallel to each other and each may extend in the first horizontal direction HD1. In the second connection area CNR2, the first dummy word line connection wiring 81, the second dummy word line connection wiring 82, and the third dummy word line connection wiring 83 can be configured to be parallel to the drain select line connection wirings 71, 72, 73, and 74, which also extend in the first horizontal direction HD1.

[0118] Among the dummy contacts, those penetrating the same drain selection line can be arranged on a line along the second horizontal direction HD2. Specifically, the first dummy contacts 61a, 61b, and 61c penetrating the first drain selection line DSL1 can be arranged on a line along the second horizontal direction HD2. A similar arrangement to that of the first dummy contacts 61a, 61b, and 61c is also applied to the second dummy contacts 62a, 62b, and 62c, the third dummy contacts 63a, 63b, and 63c, and the fourth dummy contacts 64a, 64b, and 64c.

[0119] In embodiments of this disclosure, the first line R <1> The second drain contacts 52a, 52b, and 52c are set to be on the same straight line along the first horizontal direction HD1, and the second row R <2> The third drain contacts 53a, 53b, and 53c are set to be on the same straight line along the first horizontal direction HD1, and the third row R <3> The fourth drain contacts 54a, 54b and 54c are set to be on the same straight line along the first horizontal direction HD1.

[0120] A virtual first line VL1 is defined by intersecting the centers of the second drain contacts 52a, 52b, and 52c in the first horizontal direction HD1; a virtual second line VL2 is defined by intersecting the centers of the third drain contacts 53a, 53b, and 53c in the first horizontal direction HD1; and a virtual third line VL3 is defined by intersecting the centers of the fourth drain contacts 54a, 54b, and 54c in the first horizontal direction HD1. The distances between the virtual first line VL1 and the virtual second line VL2, and between the virtual second line VL2 and the virtual third line VL3, can each be defined as a dimension d1, which can be defined as the spacing between the drain contacts in the second horizontal direction HD2.

[0121] By intersecting the first horizontal direction HD1 with the first row R <1> The virtual fourth line VL4 is defined by the center intersection of the dummy contacts 61a, 62a, 63a and 64a, and is defined by the intersection of the virtual contacts 61a, 62a, 63a and 64a with the second line R in the first horizontal direction HD1. <2> The virtual fifth line VL5 is defined by the center intersection of the dummy contacts 61b, 62b, 63b, and 64b, and is defined by the intersection of the third line R on the first horizontal direction HD1. <3> The virtual sixth line VL6 is defined by the center intersection of the dummy contacts 61c, 62c, 63c, and 64c. The distance between the virtual fourth line VL4 and the virtual fifth line VL5, and the distance between the virtual fifth line VL5 and the virtual sixth line VL6, can each be a dimension d2, which can be defined as the spacing between the dummy contacts in the second horizontal direction HD2. In an embodiment, d2 can be the same as d1.

[0122] Figure 13 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 14 It is shown Figure 13A plan view of the drain contact and the dummy contact.

[0123] Reference Figure 13 and Figure 14 The dummy contacts set in adjacent rows can be offset relative to each other in the first horizontal direction HD1. For example, the first row R <1> The dummy contacts 61a, 62a, 63a and 64a and the second row R <2> The dummy contacts 61b, 62b, 63b, and 64b can be offset relative to each other in the first horizontal direction HD1, and the second row R <2> The dummy contacts 61b, 62b, 63b and 64b and the third row R <3> The dummy contacts 61c, 62c, 63c and 64c can be offset relative to each other in the first horizontal direction HD1.

[0124] First line R <1> The dummy contacts 61a, 62a, 63a and 64a and the second row R <2> The dummy contacts 61b, 62b, 63b, and 64b can be arranged diagonally in directions intersecting the first horizontal direction HD1 and the second horizontal direction HD2, respectively. (Second row R) <2> The dummy contacts 61b, 62b, 63b and 64b and the third row R <3> The dummy contacts 61c, 62c, 63c, and 64c can be arranged diagonally in directions intersecting the first horizontal direction HD1 and the second horizontal direction HD2, respectively. The virtual line connecting the centers of the dummy contacts 61a, 61b, and 61c can form a V-shape.

[0125] A virtual first line VL1, intersecting the centers of the second drain contacts 52a, 52b, and 52c on the first horizontal direction HD1; a virtual second line VL2, intersecting the centers of the third drain contacts 53a, 53b, and 53c on the first horizontal direction HD1; and a virtual third line VL3, intersecting the centers of the fourth drain contacts 54a, 54b, and 54c on the first horizontal direction HD1, can be defined as extending parallel to each other on the first horizontal direction HD1. Each of the distances between the virtual first line VL1 and the virtual second line VL2, and between the virtual second line VL2 and the virtual third line VL3, can have a dimension d1, which can be defined as the spacing between the drain contacts on the second horizontal direction HD2.

[0126] On the first horizontal direction HD1 and the first row R <1> The virtual fourth line VL4', which intersects the centers of the dummy contacts 61a, 62a, 63a, and 64a, intersects with the second line R in the first horizontal direction HD1. <2> The virtual fifth line VL5', which intersects the centers of the dummy contacts 61b, 62b, 63b, and 64b, and the virtual fifth line VL5', which intersects with the third line R on the first horizontal direction HD1. <3> The virtual sixth line VL6', formed by the central intersection of the dummy contacts 61c, 62c, 63c, and 64c, can be defined as extending parallel to each other in the first horizontal direction HD1. The distance between the virtual fourth line VL4' and the virtual fifth line VL5', and the distance between the virtual fifth line VL5' and the virtual sixth line VL6', can have a dimension d2', which can be defined as the spacing between the dummy contacts in the second horizontal direction HD2. In embodiments of this disclosure, d2' is less than d1.

[0127] Because the dummy contacts in adjacent rows face each other diagonally, the spacing between the dummy contacts in the second horizontal direction HD2 can be reduced without narrowing the distance between the dummy contacts. Therefore, because the spacing of the dummy word line connection wiring can be reduced, the area available for setting the drain select line connection wiring can be increased or set with a safer margin.

[0128] Figure 15 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 16 It is shown Figure 15 A plan view of the drain selection line and isolation insulation pattern. For clarity, descriptions of the same components described above will be omitted.

[0129] Reference Figure 15 and Figure 16 The first pad segment PS1 of the first drain selection line DSL1 and the first pad segment PS1 of the second drain selection line DSL2 can be set on a line along the first horizontal direction HD1. The first pad segment PS1 of the third drain selection line DSL3 and the first pad segment PS1 of the fourth drain selection line DSL4 can be set on a line along the first horizontal direction HD1.

[0130] In each of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4, the size of the first pad segment PS1 in the second horizontal direction HD2 can be larger than the size of the electrode segment ES in the second horizontal direction HD2. For example, the size of the electrode segment ES of the fourth drain select line DSL4 in the second horizontal direction HD2 can be Wa, and the maximum size of the first pad segment PS1 of the fourth drain select line DSL4 in the second horizontal direction HD2 can be Wb, where Wb is greater than Wa.

[0131] Figure 17 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 18 It is along Figure 17 A cross-sectional view taken by line H-H'. Figure 19 It is shown Figure 17 A plan view of the drain selection line and the isolation insulation pattern. Figure 20 It is shown Figure 17 A plan view of the drain contacts, dummy contacts, and dummy word lines. For simplicity, descriptions of the same components will be omitted.

[0132] Reference Figures 17 to 20 The first isolation insulation pattern 41a may include a first line segment L1 and a second line segment L2. The first line segment L1 extends from the cell region CAR across the first connection region CNR1 and into the second connection region CNR2 in the first horizontal direction HD1. The second line segment L2 is disposed in the second connection region CNR2 and extends from the first line segment L1 into the second isolation pattern IS2 in the second horizontal direction HD2.

[0133] The second insulating pattern 42a may include a third line segment L3 and a fourth line segment L4. The third line segment L3 extends from the unit region CAR across the first connection region CNR1 and into the second connection region CNR2 in the first horizontal direction HD1. The fourth line segment L4 is disposed in the second connection region CNR2 and extends from the third line segment L3 of the first insulating pattern 41a to the first line segment L1 in the second horizontal direction HD2. The fourth line segment L4 of the second insulating pattern 42a is disposed closer to the first connection region CNR1 than the second line segment L2 of the first insulating pattern 41a.

[0134] The third isolation insulation pattern 43a may include a fifth line segment L5 and a sixth line segment L6. The fifth line segment L5 extends from the cell region CAR across the first connection region CNR1 into the second connection region CNR2 in the first horizontal direction HD1. The sixth line segment L6 is disposed in the second connection region CNR2 and extends from the fifth line segment L5 into the second isolation pattern IS2 in the second horizontal direction HD2. The sixth line segment L6 of the third isolation insulation pattern 43a is disposed closer to the first connection region CNR1 than the second line segment L2 of the first isolation insulation pattern 41a.

[0135] The fourth isolation insulation pattern 44a may be disposed in the second connection area CNR2 and extend from the first isolation pattern IS1 to the second isolation pattern IS2 in the second horizontal direction HD2. The fourth isolation insulation pattern 44a is disposed further away from the first connection area CNR1 than the second line segment L2 of the first isolation insulation pattern 41a.

[0136] Each of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 includes an electrode segment ES, a first pad segment PS1, and a second pad segment PS2.

[0137] Reference Figure 19 The electrode segments ES of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 are located in the unit region CAR. These electrode segments ES are arranged along a single line in the second horizontal direction HD2. The electrode segment ES of the second drain selection line DSL2 is located between the electrode segments ES of the first drain selection line DSL1 and the third drain selection line DSL3, and the electrode segment ES of the third drain selection line DSL3 is located between the electrode segments ES of the second drain selection line DSL2 and the fourth drain selection line DSL4.

[0138] The first pad segment PS1 of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 is located in the first connection area CNR1. The first pad segment PS1 of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 is arranged on a single line along the second horizontal direction HD2. The first pad segment PS1 of the second drain selection line DSL2 is located between the first pad segment PS1 of the first drain selection line DSL1 and the first pad segment PS1 of the third drain selection line DSL3. The first pad segment PS1 of the third drain selection line DSL3 is located between the first pad segment PS1 of the second drain selection line DSL2 and the first pad segment PS1 of the fourth drain selection line DSL4. For each of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4, the size of the first pad segment PS1 in the second horizontal direction HD2 can be the same as the size of the electrode segment ES in the second horizontal direction HD2.

[0139] The second pad segment PS2 of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 is set in the second connection area CNR2.

[0140] The second pad segment PS2 of the third drain select line DSL3 is further away from the first connection area CNR1 setting than the second pad segment PS2 of the second drain select line DSL2 and the second pad segment PS2 of the fourth drain select line DSL4. The second pad segment PS2 of the first drain select line DSL1 is further away from the first connection area CNR1 setting than the second pad segment PS2 of the third drain select line DSL3.

[0141] For each of the second drain select line DSL2 and the fourth drain select line DSL4, the size of the second pad segment PS2 in the second horizontal direction HD2 may be the same as the size of the first pad segment PS1 and the electrode segment ES in the second horizontal direction HD2. For each of the first drain select line DSL1 and the third drain select line DSL3, the size of the second pad segment PS2 in the second horizontal direction HD2 may be larger than the size of the first pad segment PS1 and the electrode segment ES in the second horizontal direction HD2.

[0142] The size of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2 may be greater than the size of the second pad segment PS2 of the second drain select line DSL2 in the second horizontal direction HD2 and the size of the second pad segment PS2 of the fourth drain select line DSL4 in the second horizontal direction HD2. In an embodiment, the size of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2 may be greater than the sum of the size of the first pad segment PS1 of the second drain select line DSL2 in the second horizontal direction HD2, the size of the first pad segment PS1 of the third drain select line DSL3 in the second horizontal direction HD2, and the size of the first pad segment PS1 of the fourth drain select line DSL4 in the second horizontal direction HD2.

[0143] The size of the second pad segment PS2 of the first drain select line DSL1 in the second horizontal direction HD2 may be larger than the size of the second pad segment PS2 of the third drain select line DSL3 in the second horizontal direction HD2. In some embodiments, the size of the second pad segment PS2 of the first drain select line DSL1 in the second horizontal direction HD2 may be larger than the sum of the sizes of the first pad segment PS1 of the first drain select line DSL1, the first pad segment PS1 of the second drain select line DSL2, the first pad segment PS1 of the third drain select line DSL3, and the first pad segment PS1 of the fourth drain select line DSL4 in the second horizontal direction HD2. In some embodiments, the size of the second pad segment PS2 of the first drain select line DSL1 may be the same as the distance between the first isolation pattern IS1 and the second isolation pattern IS2 in the second horizontal direction HD2.

[0144] The first dummy contact 62a, the second dummy contact 62b, the third dummy contact 62c, and the fourth dummy contact 62d of the second pad section PS2 of the second drain select line DSL2, the first dummy contact 63a and the second dummy contact 63b of the second pad section PS2 of the third drain select line DSL3, and the first dummy contact 61a and the second dummy contact 61b of the second pad section PS2 of the first drain select line DSL1 can be arranged on a line along the first horizontal direction HD1 to form the first row R. <1> .

[0145] The first dummy contact 64a, the second dummy contact 64b, the third dummy contact 64c, and the fourth dummy contact 64d of the second pad section PS2 of the fourth drain select line DSL4, the third dummy contact 63c and the fourth dummy contact 63d of the second pad section PS2 of the third drain select line DSL3, and the third dummy contact 61c and the fourth dummy contact 61d of the second pad section PS2 of the first drain select line DSL1 can be arranged on a line along the first horizontal direction HD1 to form a second row R. <2> .

[0146] Although not shown in any of the accompanying drawings, the first dummy contact 61a, the second dummy contact 62a, the third dummy contact 63a, and the fourth dummy contact 64a are all connected to the first dummy word line DWLa; the first dummy contact 61b, the second dummy contact 62b, the third dummy contact 63b, and the fourth dummy contact 64b are all connected to the second dummy word line DWLb; the first dummy contact 61c, the second dummy contact 62c, the third dummy contact 63c, and the fourth dummy contact 64c are all connected to the third dummy word line DWLc; and the first dummy contact 61d, the second dummy contact 62d, the third dummy contact 63d, and the fourth dummy contact 64d are all connected to the fourth dummy word line DWLd.

[0147] Three of the dummy contacts 61a, 62a, 63a, and 64a that are commonly connected to the first dummy word line DWLa are set in the first row R. <1> In the middle; three of the dummy contacts 61b, 62b, 63b, and 64b, which are jointly connected to the second dummy word line DWLb, are set in the first row R. <1> In the middle; among the dummy contacts 61c, 62c, 63c and 64c that are commonly connected to the third dummy word line DWLc, three dummy contacts 61c, 63c and 64c are set in the second row R. <2> In the middle; and three of the dummy contacts 61d, 62d, 63d and 64d, which are jointly connected to the fourth dummy word line DWLd, are set in the second row R. <2> middle.

[0148] Although embodiments of this disclosure show three dummy contacts among dummy contacts that are commonly connected to a dummy word line arranged in the same row, this disclosure is not limited thereto. This disclosure includes all embodiments in which at least two dummy contacts among dummy contacts that are commonly connected to a dummy word line are arranged in the same row.

[0149] Reference Figure 18 The electrode structure STa may be substantially the same as the electrode structure ST described above, and may further include an additional dummy word line DWLe stacked on the fourth dummy word line DWLd. Multiple additional dummy contacts 61e, 62e, 63e, and 64e may be connected to the additional dummy word line DWLe. The additional dummy contacts 61e, 62e, 63e, and 64e include a first additional dummy contact 61e, a second additional dummy contact 62e, a third additional dummy contact 63e, and a fourth additional dummy contact 64e.

[0150] The first additional dummy contact 61e extends through the first drain select line DSL1 in the vertical direction VD and can be connected to the additional dummy word line DWLe. The first additional dummy contact 61e can penetrate the first pad segment PS1 of the first drain select line DSL1.

[0151] The second additional dummy contact 62e extends through the second drain select line DSL2 in the vertical direction VD and can be connected to the additional dummy word line DWLe. The second additional dummy contact 62e can penetrate the first pad segment PS1 of the second drain select line DSL2.

[0152] The third additional dummy contact 63e extends vertically through the third drain select line DSL3 in the vertical direction VD and can be connected to the additional dummy word line DWLe. The third additional dummy contact 63e can penetrate the first pad segment PS1 of the third drain select line DSL3.

[0153] The fourth additional dummy contact 64e extends through the fourth drain select line DSL4 in the vertical direction VD and can be connected to the additional dummy word line DWLe. The fourth additional dummy contact 64e can penetrate the first pad segment PS1 of the fourth drain select line DSL4.

[0154] The first additional dummy contact 61e, the second additional dummy contact 62e, the third additional dummy contact 63e and the fourth additional dummy contact 64e can be arranged on a line along the second horizontal direction HD2.

[0155] The additional dummy word connection wiring 85 is connected to the first additional dummy contact 61e, the second additional dummy contact 62e, the third additional dummy contact 63e, and the fourth additional dummy contact 64e. (See reference...) Figure 20The additional dummy word line connection wiring 85 can be connected to the second additional dummy contact 62e, the third additional dummy contact 63e, and the fourth additional dummy contact 64e by bypassing one or more drain contacts 51a to 51c, 52a to 52c, 53a to 53c, and 54a to 54c. For example, the additional dummy word line connection wiring 85 includes a first line pattern 85a, a second line pattern 85b, and a finger pattern 85c. The first line pattern 85a may extend across the second connection region CNR1 in the first horizontal direction HD1. The second line pattern 85b may extend from the first line pattern 85a in the second horizontal direction HD2 in the first connection region CNR1. The second line pattern 85b is configured to be further away from the second connection region CNR2 in the first horizontal direction HD1 than the drain contacts 51a to 51c, 52a to 52c, 53a to 53c, and 54a to 54c. The finger pattern 85c may extend from the second line pattern 85b in the first horizontal direction HD1 and may pass between adjacent or adjacent drain contacts in the second horizontal direction HD2, and may be connected to the second additional dummy contact 62e, the third additional dummy contact 63e and the fourth additional dummy contact 64e respectively.

[0156] Figure 21 This is a plan view of a memory device according to an embodiment of the present disclosure. Figure 22 It is shown Figure 21 A plan view of the drain selection line and isolation insulation pattern. For simplicity, the description of the same components described above will be omitted.

[0157] Reference Figure 21 and Figure 22 The memory device may include a cell region CAR and a connection region CNR extending from the cell region CAR in a first horizontal direction HD1. Each of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4 may include an electrode segment ES disposed in the cell region CAR and a pad segment PS disposed in the connection region CNR.

[0158] In the cell region CAR, the electrode segments ES of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 can be arranged on a single line along the second horizontal direction HD2. The electrode segments ES of the first drain selection line DSL1, the second drain selection line DSL2, the third drain selection line DSL3, and the fourth drain selection line DSL4 can have the same dimensions in the second horizontal direction HD2.

[0159] In the connection area CNR, the pad segment PS of the first drain selection line DSL1, the pad segment PS of the second drain selection line DSL2, the pad segment PS of the third drain selection line DSL3, and the pad segment PS of the fourth drain selection line DSL4 can be set on a line along the first horizontal direction HD1.

[0160] In each of the first drain select line DSL1, the second drain select line DSL2, the third drain select line DSL3, and the fourth drain select line DSL4, the maximum dimension of the pad segment PS in the second horizontal direction HD2 can be greater than the dimension of the electrode segment ES in the second horizontal direction HD2. For example, in the fourth drain select line DSL4, the dimension of the electrode segment ES in the second horizontal direction HD2 can be Wa, and the maximum dimension of the pad segment PS in the second horizontal direction HD2 can be Wb4', where Wb4' is greater than Wa.

[0161] The maximum size of the pad segment PS of the first drain select line DSL1 on the second horizontal direction HD2 can be greater than the maximum size of the pad segment PS of the second drain select line DSL2 on the second horizontal direction HD2. The maximum size of the pad segment PS of the second drain select line DSL2 on the second horizontal direction HD2 can be greater than the maximum size of the pad segment PS of the third drain select line DSL3 on the second horizontal direction HD2. The maximum size of the pad segment PS of the third drain select line DSL3 on the second horizontal direction HD2 can be greater than the maximum size of the pad segment PS of the fourth drain select line DSL4 on the second horizontal direction HD2. For example, when the maximum dimension of the pad segment PS of the first drain select line DSL1 in the second horizontal direction HD2 is Wb1', the maximum dimension of the pad segment PS of the second drain select line DSL2 in the second horizontal direction HD2 is Wb2', the maximum dimension of the pad segment PS of the third drain select line DSL3 in the second horizontal direction HD2 is Wb3', and the maximum dimension of the pad segment PS of the fourth drain select line DSL4 in the second horizontal direction HD2 is Wb4', the relationship Wb1'>Wb2'>Wb3'>Wb4' can be satisfied.

[0162] In the connection area CNR, drain contacts 51a to 51c, 52a to 52c, 53a to 53c, and 54a to 54c, as well as dummy contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d, can be configured. Dummy contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d can be configured in a different row on the second horizontal direction HD2 than drain contacts 51a to 51c, 52a to 52c, 53a to 53c, and 54a to 54c.

[0163] Drain contacts 51a to 51c, 52a to 52c, 53a to 53c, and 54a to 54c may include first drain contacts 51a to 51c, second drain contacts 52a to 52c, third drain contacts 53a to 53c, and fourth drain contacts 54a to 54c. The first drain contacts 51a to 51c, second drain contacts 52a to 52c, third drain contacts 53a to 53c, and fourth drain contacts 54a to 54c may be arranged on a line along a first horizontal direction HD1 to form a first row R. <1> .

[0164] Among the dummy contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d, the dummy contacts 61a, 61b, 62a, 62b, 63a, 63b, 64a, and 64b connected to the first dummy word line and the second dummy word line can be arranged on a line along the first horizontal direction HD1 to form a second row R. <2> Among the dummy contacts 61a to 61d, 62a to 62d, 63a to 63d, and 64a to 64d, the dummy contacts 61c, 61d, 62c, 62d, 63c, 63d, 64c, and 64d connected to the third dummy word line and the fourth dummy word line can be arranged on a line along the first horizontal direction HD1 to form a third row R. <3> .

[0165] Figure 23 This is a cross-sectional view of a memory device according to an embodiment of the present disclosure.

[0166] Reference Figure 23 The memory device may include a first chip 100 and a second chip 200. The first chip 100 may be a memory chip, and the second chip 200 may be a peripheral circuit chip.

[0167] The first chip 100 may include a first substrate 10, an electrode structure ST, a drain select line DSL, a cell plug CP, a drain contact 50, a dummy contact 60, a drain select line connection wiring 70, dummy word line connection wirings 80a and 80b, a bit line BL, a first insulating layer 90, a second insulating layer 92 and a third insulating layer 93, a first row bonding pad PAD1a and a first column bonding pad PAD1b.

[0168] Drain selection line connection wiring 70, dummy word line connection wiring 80a and 80b, and bit line BL can be set on the same wiring layer. Bit line BL is set in the cell area CAR.

[0169] The first row bonding pad PAD1a and the first column bonding pad PAD1b may be disposed in the third insulating layer 93. The lower surfaces of the first row bonding pad PAD1a and the first column bonding pad PAD1b may be exposed on the lower surface of the third insulating layer 93.

[0170] The memory device includes a connection region CNR extending from the cell region CAR in a first horizontal direction HD1. The connection region CNR includes a first connection region CNR1, a second connection region CNR2, and a third connection region CNR3. Among the first connection region CNR1, the second connection region CNR2, and the third connection region CNR3, the first connection region CNR1 is closest to the cell region CAR in the first horizontal direction HD1, the second connection region CNR2 is the next closest to the cell region CAR after the first connection region CNR1, and the third connection region CNR3 is furthest from the cell region CAR.

[0171] The first column of bonding pads PAD1b is located in the cell region CAR and connected to the bit line BL in the cell region CAR.

[0172] Drain contact 50 is located in the first connection area CNR1, dummy contact 60 is located in the second connection area CNR2, and first row bonding pad PAD1a is located in the third connection area CNR3.

[0173] Drain selection line connection wiring 70 is connected to drain contact 50 in the first connection area CNR1, and then extends from the first connection area CNR1 through the second connection area CNR2 to the third connection area CNR3, and then connects to one of the first row bonding pads PAD1a in the third connection area CNR3.

[0174] Dummy word line connection wirings 80a and 80b are respectively connected to dummy contact 60 in the second connection area CNR2, and then extended from the second connection area CNR2 to the third connection area CNR3, and then respectively connected to the first row bonding pad PAD1a in the third connection area CNR3.

[0175] The second chip 200 may include a second substrate 30, peripheral circuitry 32, a fourth insulating layer 34, wiring structure 36, a second row bonding pad PAD2a, and a second column bonding pad PAD2b.

[0176] Peripheral circuitry 32 may be disposed on the second substrate 30. Peripheral circuitry 32 can control the operation of the memory cell array. For example, peripheral circuitry 32 may include transistor circuitry PTC and page buffer circuitry PBC. Peripheral circuitry 32 may also include control logic and a voltage generator, but examples are not limited thereto.

[0177] A fourth insulating layer 34 may be disposed on the second substrate 30 and cover the peripheral circuit 32. Second row bonding pads PAD2a and second column bonding pads PAD2b may be disposed within the fourth insulating layer 34. The upper surfaces of the second row bonding pads PAD2a and the second column bonding pads PAD2b may be exposed on the upper surface of the fourth insulating layer 34.

[0178] The second row bonding pad PAD2a is located in the third connection area CNR3 and is connected to the transistor circuit PTC via wiring structure 36. The second column bonding pad PAD2b is located in the cell area CAR and is connected to the page buffer circuit PBC via wiring structure 36.

[0179] The first row bonding pads PAD1a of the first chip 100 and the second row bonding pads PAD2a of the second chip 200 can be bonded to each other. The first column bonding pads PAD1b of the first chip 100 and the second column bonding pads PAD2b of the second chip 200 can be bonded to each other.

[0180] Despite Figure 23 In this embodiment, the drain contact 50 and the dummy contact 60 are disposed in different connection areas, but the embodiments of this disclosure are not limited thereto. (Refer to the above...) Figure 21 and Figure 22 As described, drain contacts and dummy contacts can be set in a single connection area.

[0181] Despite Figure 23 In this disclosure, a semiconductor device includes a memory chip and a peripheral circuit chip, but embodiments thereof are not limited thereto. As another example, the semiconductor device may include two or more memory chips, or it may include two or more peripheral circuit chips. As yet another example, at least one semiconductor chip included in the semiconductor device may have a PUC (lower peripheral cell) structure, which includes a peripheral circuit region and a memory cell region constructed on the peripheral circuit region.

[0182] Although detailed embodiments of the present disclosure have been described herein, those skilled in the art will understand that various modifications, additions, and substitutions can be made in relation to these embodiments without departing from the scope and technical concept of the present disclosure. Therefore, the scope of the present disclosure should not be limited to the described embodiments. All changes within the meaning and equivalent scope of the claims are included within its scope.

[0183] Cross-references to related applications

[0184] This application claims priority to Korean Patent Application No. 10-2024-0165423, filed on November 19, 2024, with the Korean Intellectual Property Office, the entirety of which is incorporated herein by reference.

Claims

1. A memory device comprising: A substrate, the substrate including a first connection region and a second connection region disposed in a first horizontal direction. An electrode structure comprising multiple word lines vertically stacked on the substrate and multiple dummy word lines vertically stacked on the multiple word lines; Multiple drain selection lines extend in the first horizontal direction in the first drain selection line layer on the electrode structure; Multiple drain contacts, which are respectively connected to the multiple drain selection lines in the first connection area; as well as Multiple dummy contacts extend vertically through the multiple drain select lines in the second connection region and are respectively connected to the multiple dummy word lines. The plurality of dummy contacts are arranged in multiple rows in a second horizontal direction perpendicular to the first horizontal direction, and the dummy contacts that are connected to one of the plurality of dummy word lines are arranged in a single row parallel to the first horizontal direction.

2. The memory device according to claim 1, wherein, The substrate further includes unit regions, and The first connection region is located closer to the unit region in the first horizontal direction than the second connection region.

3. The memory device according to claim 1, wherein, The multiple dummy character lines include a first dummy character line, a second dummy character line, a third dummy character line, and a fourth dummy character line that are vertically stacked. The dummy contacts connecting the first dummy word line and the second dummy word line are arranged on a line in the first row along the first horizontal direction, and The dummy contacts connected to the third dummy word line and the fourth dummy word line are arranged on a line in the second row along the first horizontal direction.

4. The memory device according to claim 3, further comprising: A first wiring layer is disposed on the plurality of drain selection lines. The first wiring layer includes: Multiple drain selection lines are connected to the multiple drain contacts. The first dummy word line connection wiring is connected to the dummy contact connected to the first dummy word line; The second dummy word line connection wiring is connected to the dummy contact connected to the second dummy word line; The third dummy word line connection wiring is connected to the dummy contact connected to the third dummy word line; and The fourth dummy word line connection wiring is connected to the dummy contact connected to the fourth dummy word line.

5. The memory device according to claim 4, wherein, Each of the first, second, third, and fourth dummy word line connection wirings includes a main line extending in the first horizontal direction and a branch line extending from the main line and connecting to the dummy contact. The main lines of the first dummy word line connecting wiring and the second dummy word line connecting wiring are respectively located on both sides of the first row, and The main lines of the third and fourth dummy word line connecting wirings are respectively located on both sides of the second row.

6. The memory device according to claim 4, wherein, The first wiring layer also includes bit lines.

7. The memory device according to claim 1, wherein, The multiple dummy character lines include a first dummy character line and a second dummy character line. The dummy contacts connected to the first dummy word line are arranged along the first horizontal direction to form a first row, and The dummy contacts connected to the second dummy word line are arranged along the first horizontal direction on a line to form a second row.

8. The memory device according to claim 7, wherein, The first row is aligned with one of the plurality of drain contacts in the first horizontal direction, and The second row is aligned with another of the plurality of drain contacts in the first horizontal direction.

9. The memory device according to claim 7, wherein, The dummy contacts in the first row and the dummy contacts in the second row are offset relative to each other in the first horizontal direction.

10. The memory device according to claim 9, wherein, The plurality of drain contacts include a first drain contact and a second drain contact that are adjacent to each other in the second horizontal direction. The distance between the virtual first line intersecting the center of the first drain contact in the first horizontal direction and the virtual second line intersecting the center of the second drain contact in the first horizontal direction has a first size, and The distance between the virtual third line, which intersects the center of the dummy contact in the first row in the first horizontal direction, and the virtual fourth line, which intersects the center of the dummy contact in the second row in the first horizontal direction, has a second size that is smaller than the first size.

11. The memory device according to claim 1, wherein, Each of the plurality of drain selection lines includes a first pad segment disposed in the first connection region and a second pad segment disposed in the second connection region. The plurality of drain contacts are respectively connected to the first pad section of the plurality of drain select lines, and Each of the plurality of dummy contacts penetrates one of the second pad segments of the plurality of drain selection lines.

12. The memory device according to claim 11, wherein, The second pad segment of the multiple drain selection lines is arranged on a line along the first horizontal direction.

13. The memory device according to claim 11, wherein, The first pad segment of the multiple drain selection lines is arranged on a line along the second horizontal direction.

14. The memory device according to claim 11, wherein, For each of the plurality of drain selection lines, the size of the second pad segment in the second horizontal direction is greater than the size of the first pad segment in the second horizontal direction.

15. A memory device comprising: A substrate, the substrate including a first connection region and a second connection region disposed in a first horizontal direction. An electrode structure comprising multiple word lines vertically stacked on the substrate and multiple dummy word lines vertically stacked on the multiple word lines; Multiple drain selection lines extend parallel to each other in the first horizontal direction in the drain selection line layer on the electrode structure, and each drain selection line includes a first pad segment disposed in the first connection region and a second pad segment disposed in the second connection region. Multiple drain contacts, each of which is connected to a first pad segment of the multiple drain select lines; as well as Multiple dummy contacts, each extending vertically through one of the second pad segments of the multiple drain select lines, and connected to the multiple dummy word lines respectively. The plurality of dummy contacts are arranged in multiple rows in a second horizontal direction perpendicular to the first horizontal direction. The dummy contacts in each row are arranged along a line in the first horizontal direction, and at least two dummy contacts that are connected to one of the plurality of dummy word lines are arranged in one row of the plurality of rows.

16. The memory device according to claim 15, wherein, The multiple drain selection lines include a first drain selection line, a second drain selection line, a third drain selection line, and a fourth drain selection line. The first pad segment of the second drain selection line is disposed in the second horizontal direction between the first pad segment of the first drain selection line and the first pad segment of the third drain selection line. The first pad segment of the third drain selection line is disposed in the second horizontal direction between the first pad segment of the second drain selection line and the first pad segment of the fourth drain selection line. The second pad segment of the third drain selection line is located further away from the first connection area in the first horizontal direction than the second pad segment of the second drain selection line and the second pad segment of the fourth drain selection line. The second pad segment of the first drain selection line is located further away from the first connection area in the first horizontal direction than the second pad segment of the third drain selection line.

17. The memory device according to claim 16, wherein, For each of the second and fourth drain selection lines, the dimension of the second pad segment in the second horizontal direction is the same as the dimension of the first pad segment in the second horizontal direction, and For each of the first drain selection line and the third drain selection line, the size of the second pad segment in the second horizontal direction is greater than the size of the first pad segment in the second horizontal direction.

18. The memory device according to claim 17, wherein, In each of the first and third drain selection lines, the size of the second pad segment in the second horizontal direction is greater than the size of the second pad segment in the second horizontal direction of the second drain selection line and the size of the second pad segment in the second horizontal direction of the fourth drain selection line.

19. The memory device according to claim 17, wherein, The second pad segment of the first drain selection line has a larger dimension in the second horizontal direction than the second pad segment of the third drain selection line in the second horizontal direction.

20. The memory device according to claim 16, in, The multiple dummy character lines include a first dummy character line, a second dummy character line, a third dummy character line, and a fourth dummy character line. The plurality of dummy contacts include: The first dummy contact extends vertically through the second pad section of the first drain select line and is connected to the first dummy word line, the second dummy word line, the third dummy word line, and the fourth dummy word line, respectively. The second dummy contact extends vertically through the second pad section of the second drain select line and is connected to the first dummy word line, the second dummy word line, the third dummy word line, and the fourth dummy word line, respectively. A third dummy contact extends vertically through the second pad section of the third drain select line and is connected to the first dummy word line, the second dummy word line, the third dummy word line, and the fourth dummy word line, respectively; and A fourth dummy contact extends vertically through the second pad segment of the fourth drain select line and is connected to the first dummy word line, the second dummy word line, the third dummy word line, and the fourth dummy word line, respectively. The first dummy contact connected to the first dummy character line and the second dummy character line, the third dummy contact connected to the first dummy character line and the second dummy character line, and the second dummy contact are arranged in the first row along the first horizontal direction, and The first dummy contact connected to the third dummy character line and the fourth dummy character line, the third dummy contact connected to the third dummy character line and the fourth dummy character line, and the fourth dummy contact are arranged in the second row along the first horizontal direction.

21. The memory device of claim 15, further comprising: Multiple additional dummy contacts, each penetrating the first pad segment of the multiple drain select lines, and collectively connected to one of the multiple dummy word lines. The plurality of additional dummy contacts are arranged in a row along the second horizontal direction.

22. The memory device according to claim 21, wherein, The plurality of additional dummy contacts are positioned closer to the second connection area in the first horizontal direction than the plurality of drain contacts.

23. The memory device of claim 21, further comprising: A first wiring layer is located on the plurality of drain selection lines. The first wiring layer includes additional dummy word line connection wiring that is commonly connected to the plurality of additional dummy contacts. The additional dummy word line connection wiring includes: A first line segment extends from the second connecting region to the first connecting region in the first horizontal direction; A second line segment, extending from the first line segment in the second horizontal direction; and Multiple finger segments pass between drain contacts in adjacent rows, the multiple finger segments are arranged in the second horizontal direction and extend from the second line segment in the first horizontal direction to connect to the multiple additional dummy contacts respectively, and The second line segment is located further away from the second connection area in the first horizontal direction than the plurality of drain contacts.

24. A memory device comprising: A substrate, the substrate including a cell region and a connection region extending from the cell region in a row direction; An electrode structure comprising multiple word lines vertically stacked on the substrate and multiple dummy word lines vertically stacked on the multiple word lines; Multiple drain selection lines extend in the row direction in a first drain selection line layer on the electrode structure, and each drain selection line includes an electrode segment disposed in the cell region and a pad segment disposed in the connection region. Multiple drain contacts, which are respectively connected to the pad sections of the multiple drain selection lines in the connection area; as well as Multiple dummy contacts extend vertically through the pad segments of the multiple drain select lines in the connection area and are respectively connected to the multiple dummy word lines. In a plan view, the plurality of dummy contacts are located in a different row than the plurality of drain contacts.

25. The memory device according to claim 24, wherein, The pad segments of the multiple drain selection lines are arranged on a line along the row direction.

26. The memory device of claim 24, wherein, In each of the plurality of drain selection lines, the pad segment is larger in the column direction than the electrode segment is in the column direction.

27. The memory device according to claim 24, wherein, The multiple dummy character lines include a first dummy character line, a second dummy character line, a third dummy character line, and a fourth dummy character line. The dummy contacts connected to the first dummy word line and the second dummy word line are arranged on a line along the row direction to form a first row, and The dummy contacts connected to the third dummy word line and the fourth dummy word line are arranged on a line along the row direction to form a second row.

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