Glass core for encapsulation, encapsulation substrate, and method for manufacturing glass core for encapsulation

Abstract

According to the glass core for packaging, the packaging substrate, the manufacturing method of the glass core for packaging and the like, when a bare chip is embedded into a cavity of the glass core, the thickness difference can be relieved, and therefore operability and reliability can be improved. In addition, by reducing the height difference between the bare chip embedded in the cavity and the surface of the glass core, a redistribution layer can be more effectively formed. Meanwhile, it is possible to provide a glass core for packaging, which is suitable for semiconductor packaging and has excellent insulation characteristics different from those of a wafer, fine wiring expressive force different from those of a prepreg, and the like by using the glass core.

Description

Technical Field

[0001] The embodiments involve a glass core for packaging, a packaging substrate, and a method for manufacturing the glass core for packaging. Background Technology

[0002] In the manufacturing of electronic components, the process of implementing circuits on a semiconductor wafer is called the front-end process (FE), while the process of assembling the wafer into a state that can be used in an actual product is called the back-end process (BE). The back-end process includes packaging.

[0003] In recent years, the semiconductor industry has been driven by four core technologies: semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology.

[0004] Semiconductor technology is developing in various forms, such as nanometer-level linewidths below micrometers, tens of millions of cells, high-speed operation, and high heat dissipation. However, the technology for perfectly packaging them has not kept up.

[0005] Therefore, the electrical properties of semiconductors are sometimes not determined by the performance of the semiconductor technology itself, but by the packaging technology and the electrical connections it provides.

[0006] Ceramic or resin is used as the material for packaging substrates. Ceramic substrates (such as silicon substrates) are difficult to mount high-performance, high-frequency semiconductor devices due to their high resistance or dielectric constant. Resin substrates, on the other hand, can mount relatively high-performance, high-frequency semiconductor devices. However, they have limitations in reducing wiring spacing.

[0007] In recent years, silicon or glass has been used as substrates for high-end packaging. By forming through-holes in silicon or glass substrates and applying conductive materials within these through-holes, the wiring length between the device and the motherboard can be shortened, and excellent electrical characteristics can be achieved.

[0008] The relevant prior art includes Korean Patent No. 10-2499039, Korean Patent No. 10-1925372, and Korean Patent No. 10-2580122. Summary of the Invention

[0009] The problem the invention aims to solve The purpose of this embodiment is to provide a glass core for packaging that alleviates thickness differences when a bare die is embedded into the cavity of the glass core, thereby improving workability and reliability.

[0010] Another objective of the embodiments is to provide a glass core for packaging and a substrate for packaging, which can reduce the height difference between the die embedded in the cavity and the surface of the glass core, thereby enabling a redistribution layer to be formed more effectively.

[0011] Another objective of the embodiments is to provide a glass core for packaging, a substrate for packaging, and a method for manufacturing the same, which are suitable for semiconductor packaging and, by using a glass core, have superior insulation properties that are different from those of a wafer and fine wiring performance that is different from that of prepreg.

[0012] means for solving problems To achieve the aforementioned objective, the encapsulation glass core according to an embodiment includes: a flat glass having opposing first and second surfaces, a through-hole penetrating the flat glass in the thickness direction, and a cavity penetrating the first and second surfaces and allowing semiconductor devices to be disposed therein.

[0013] The cavity provides a cavity space surrounded by the inner wall of the cavity.

[0014] The inner wall of the cavity is the inner wall surface of the flat glass that connects the first surface of the flat glass to the second surface of the flat glass.

[0015] The bare die block is disposed in the cavity space.

[0016] The bare die block can be formed by arranging a cavity bare die, which is a bare die disposed in the cavity, and a glass spacer in the vertical direction.

[0017] The material can be dispensed between the inner wall of the cavity and the bare die block.

[0018] The bare die block may also include a bare die adhesive layer as an adhesive layer.

[0019] The bare die bonding layer can be disposed between the cavity bare die and the glass spacer.

[0020] The thickness of the cavity blank can be less than 90% of the thickness of the flat glass.

[0021] The bare sheet has opposing first and second surfaces, and the first surface of the flat glass and the first surface of the bare sheet, or the second surface of the flat glass and the second surface of the bare sheet, may be substantially aligned on the same line.

[0022] The cavity die has a first surface in contact with the glass spacer and a second surface opposite to the first surface, and electrodes of the cavity die may be disposed on the second surface of the cavity die.

[0023] A cavity redistribution layer is also disposed on one or the other surface of the cavity die. The cavity redistribution layer may be a redistribution layer that transmits the electrical signals of the cavity die to the outside of the cavity.

[0024] The thickness of the glass spacer can be more than 10% of the thickness of the flat glass.

[0025] The thickness (Td) of the bare die block from the upper surface of the cavity die to the bottom surface of the glass spacer can be 40 μm or more.

[0026] A through electrode may be disposed in the through hole.

[0027] The through electrode is used to transmit electrical signals between the first and second surfaces of the flat glass.

[0028] The through electrode may have through electrode pads, which are disposed on at least one of the first and second surfaces of the flat glass.

[0029] The pad at one end of the electrode of the cavity die is the electrode pad of the cavity die.

[0030] With the surface of the through electrode pad as a reference, the surface of the electrode pad of the cavity die can be configured in the thickness direction of the glass core within the range of -100μm to +100μm.

[0031] To achieve the above objectives, a packaging substrate according to another embodiment includes the above-mentioned packaging glass core and an upper redistribution layer disposed on the packaging glass core.

[0032] The upper redistribution layer includes an upper conductive layer and an upper insulating layer.

[0033] The upper conductive layer is a layer formed by connecting conductive layers in a patterned manner, and the upper insulating layer has the upper conductive layer disposed inside it.

[0034] To achieve the above objective, a method for manufacturing a glass core for encapsulation according to another embodiment includes: a configuration step, obtaining an assembly by configuring a flat glass plate having a cavity and a bare die block on a carrier; a distribution step, preparing a fixing body by distributing a distribution material between the inner wall of the cavity of the assembly and the bare die block; and a fixing step, obtaining a glass core for encapsulation by removing the carrier from the fixing body.

[0035] The carrier can detachably fix the position of the flat glass and the bare sheet block.

[0036] The flat glass is a flat glass having a first surface and a second surface opposite to each other. The cavity and the through hole are disposed in the flat glass. The through hole penetrates the flat glass in the thickness direction. The cavity provides a cavity space surrounded by the inner wall of the cavity.

[0037] The inner wall of the cavity is one surface of the flat glass as viewed from the cavity, and is also the inner wall surface connecting the first surface and the second surface of the flat glass. The cavity space allows for the placement of a cavity die. The cavity die is a die disposed within the cavity.

[0038] The bare die block is formed by the cavity bare die and the glass spacer arranged in the vertical direction.

[0039] The carrier may include a support layer and an adhesive layer disposed on the support layer.

[0040] The adhesive strength of the adhesive layer can change due to ultraviolet radiation.

[0041] The bare die block can be prepared through a bare die block manufacturing step.

[0042] The bare die block manufacturing steps include: a bare die configuration process, in which one or more cavity bare dies are spaced apart on a spacer glass to prepare configuration material; and a bare die separation process, in which the configuration material is separated by cutting at the spacer positions to obtain a bare die block.

[0043] A polishing step may be performed after the die configuration step.

[0044] The spacer glass has a first surface for arranging the cavity blank and a second surface opposite to the arranging surface, and the polishing step is a step of grinding the surface of the second surface of the spacer glass.

[0045] The thickness of the glass used for the spacer can be greater than 300 μm.

[0046] The thickness of the glass spacer can be less than 300 μm.

[0047] The method for manufacturing the glass core for encapsulation may further include an electrode forming step.

[0048] The electrode forming step can be performed before the configuration step or after the fixing step.

[0049] The electrode forming step is the step of forming an electrode in the through hole to obtain a through electrode.

[0050] The electrodes of the cavity die are electrodes disposed on one surface of the cavity die.

[0051] The glass spacer has opposing first and second surfaces, and the second surface of the flat glass and the second surface of the glass spacer may be substantially disposed on the same plane.

[0052] The electrodes of the cavity die may be substantially in the same plane as the first surface of the flat glass, or may protrude from the same plane.

[0053] The dispensing steps may include: a first process, distributing a thin-film dispensing material between the assemblies; a second process, filling the cavity inner wall and the bare die block with the dispensing material through depressurized lamination; and a third process, subjecting the assembly to one or more heat treatments to induce the curing of the dispensing material and fix the dispensing material.

[0054] In the flat glass of the configuration step, a through electrode may be configured in a portion of the through hole, while an empty space may be configured in the remaining portion.

[0055] The preparation of the dispensing material in the dispensing step and the preparation of the insulating material into the empty space through the electrode can be performed simultaneously.

[0056] The dispensing material can be an organic material or an organic-inorganic composite material.

[0057] The organic material may include epoxy resin or acrylic resin.

[0058] The organic-inorganic composite material may include insulating particles and adhesives.

[0059] The adhesive may include epoxy resin or acrylic resin.

[0060] Invention Effects The packaging glass core, packaging substrate, and manufacturing method of the packaging glass core described in the embodiments can alleviate thickness differences when inserting a bare die into the cavity of the glass core, thereby improving workability and reliability. Furthermore, by reducing the height difference between the bare die inserted into the cavity and the surface of the glass core, redistribution layers can be formed more effectively. At the same time, a packaging glass core suitable for semiconductor packaging can be provided, and by using the glass core, it possesses superior insulation properties compared to wafers and finer wiring performance compared to prepregs. Attached Figure Description

[0061] Figure 1 This is a conceptual diagram illustrating the encapsulation glass core according to an embodiment, using cross-section.

[0062] Figure 2 This is a cross-sectional view illustrating a conceptual diagram of a glass core for encapsulation according to another embodiment.

[0063] Figure 3This is a cross-sectional view illustrating a conceptual diagram of a glass core for encapsulation according to yet another embodiment.

[0064] Figure 4 This is a cross-sectional view illustrating a conceptual diagram of a glass core for encapsulation according to yet another embodiment.

[0065] Figure 5 This is a conceptual diagram illustrating the packaging substrate according to an embodiment, using cross-section.

[0066] Figures 6a to 6c This is a conceptual diagram illustrating the manufacturing process of a bare die block according to an embodiment, using cross-section.

[0067] Figures 7a to 7e This is a conceptual diagram illustrating the manufacturing process of the encapsulation glass core according to an embodiment, using cross-section.

[0068] Explanation of reference numerals in the attached figures 100: Packaging substrate 90: Glass core for encapsulation 20: Flat glass 30: Through hole 310: Through electrode 312: Through electrode pad 40: Cavity 410: Distributing materials 50: Raw wafer block 510: Glass spacer 520: Bare die adhesive layer 530: Cavity bare film 540: Electrodes of the cavity die 542: Electrode pads of the cavity die 60: Upper redistribution layer 610: Upper insulation layer 630: Upper conductive layer 515: Glass for spacers 210: Carrier Detailed Implementation The embodiments will now be described in detail with reference to the accompanying drawings to enable those skilled in the art to easily implement them. However, the embodiments can be implemented in many different ways and are not limited to the embodiments described herein. Throughout the specification, similar parts are labeled with the same reference numerals.

[0069] Throughout this specification, the term "combination of them" included in the Markush-type description refers to a mixture or combination of one or more constituent elements selected from the group of constituent elements of the Markush-type description, thereby implying that the present invention includes one or more constituent elements selected from the group of the aforementioned constituent elements.

[0070] In this specification, unless otherwise specified, terms such as "first," "second," or "A," "B," etc., are used to distinguish them from each other. Furthermore, unless the context clearly specifies otherwise, singular expressions include plural expressions.

[0071] In this specification, "~ series" may mean that a compound contains a compound corresponding to "~" or a derivative of "~".

[0072] In this specification, B being located on A means that B is located on A in direct contact with A or that B is located on A if there are other layers between B and A, and should not be interpreted as B being in contact with the surface of A.

[0073] In this specification, "connection of A to B" means that A and B are directly connected, or that A and B are connected through other constituent elements therebetween, and should not be construed as limited to a direct connection between A and B unless otherwise specified.

[0074] Prepreg, which is a form of glass fiber impregnated with polymer resin, is used as a support for packaging substrates. However, it has limitations in forming fine wiring. Silicon substrates can form finer wiring and are therefore used as supports for packaging substrates. However, silicon substrates themselves have semiconductor properties, resulting in low efficiency in high-frequency signal transmission. In view of this, the inventors used flat glass as a support for the packaging substrate. The flat glass processed into the support of the packaging substrate is called a glass core.

[0075] Glass cores offer several advantages as supports for packaging substrates. Specifically, they can be manufactured over large areas, and large-area cavities can be formed relatively easily through methods such as etching. Furthermore, even when mounting high-frequency components, parasitic components are virtually eliminated. However, glass cores also have drawbacks when used as supports for packaging substrates. Glass is brittle. Glass cores have relatively low strength when subjected to impact and are easily broken. This drawback is further exacerbated when the glass core is thin.

[0076] The inventors noted a mismatch between the thickness of the bare sheet and the thickness of the glass core when inserting the bare sheet into the cavity of the glass core. Furthermore, as a technical means to solve this mismatch problem, they proposed using a glass spacer.

[0077] Encapsulation glass core Figure 1 This is a conceptual diagram illustrating the encapsulation glass core according to an embodiment, using cross-section. Figure 2 This is a cross-sectional diagram illustrating a conceptual design of a glass core for encapsulation according to another embodiment. Figure 3 This is a cross-sectional diagram illustrating a conceptual design of a glass core for encapsulation according to yet another embodiment. Figure 4This is a cross-sectional view illustrating a conceptual diagram of a glass core for encapsulation according to yet another embodiment. The following will refer to... Figures 1 to 4 The embodiments will be described in more detail below.

[0078] To achieve the above objectives, according to one embodiment, a glass core 90 for packaging includes: a flat glass 20 having opposing first and second surfaces, a through-hole 30 penetrating the flat glass 20 in the thickness direction, and a cavity 40 penetrating the first and second surfaces and allowing semiconductor devices to be disposed therein.

[0079] The flat glass 20 is preferably made of flat glass suitable for semiconductors, such as borosilicate flat glass, alkali-free flat glass, etc., but is not limited to these.

[0080] A through-hole 30 is a hole that penetrates the flat glass 20 in the thickness direction. Multiple through-holes 30 may be configured in the flat glass 20.

[0081] The through electrode 310 can be configured in the through hole 30.

[0082] The through electrode 310 can be used to connect electrical signals between the first and second surfaces of the flat glass 20.

[0083] The through electrode 310 can be a structure in which the through hole 30 is completely filled by a conductive layer.

[0084] The through electrode 310 may also have a structure in which a conductive layer is disposed on a portion of the through hole 30. The conductive layer may be disposed on the inner wall surface of the through hole 30. In this case, the portion of the through electrode 310 without a conductive layer may be hollow or filled with an insulating layer.

[0085] The through electrode 310 may have a through electrode pad 312, which is disposed on at least one of the first surface and the second surface of the flat glass 20.

[0086] The cavity 40 provides a cavity space surrounded by the inner wall of the cavity.

[0087] The inner wall of the cavity is one surface of the flat glass 20 when viewed from the cavity, and is the inner wall surface of the flat glass 20 that connects the first surface and the second surface of the flat glass 20.

[0088] Die block 50 is disposed in the cavity space.

[0089] The die block 50 is formed by arranging a cavity die 530 and a glass spacer 510 in the vertical direction.

[0090] Cavity die 530 refers to the die disposed within cavity 40.

[0091] For example, the cavity die 530 may be a silicon chip.

[0092] For example, the cavity die 530 may be a silicon carbide chip (SiC chip).

[0093] For example, the cavity die 530 may employ passive devices. Passive devices may include capacitors, power transmission devices, etc.

[0094] For example, the cavity die 530 may employ active devices. Active devices include computing devices (central processing units, graphics processing units, etc.) and memory devices (memory chips, etc.).

[0095] The bare die block 50 may also include a bare die adhesive layer 520 as an adhesive layer.

[0096] The bare die adhesive layer 520 can be disposed between the cavity bare die 530 and the glass spacer 510, and fix their relative positions.

[0097] The die bonding layer can be an bonding layer used in semiconductor processes, for example, a silicone bonding layer, an acrylic bonding layer, etc.

[0098] The bare die block 50 has a first surface and a second surface opposite to each other.

[0099] The first surface of the flat glass 20 and the first surface of the bare sheet block 50 can be substantially aligned on the same line. In this case, a cavity bare sheet can be disposed on the second surface side of the bare sheet block 50.

[0100] The second surface of the flat glass 20 and the second surface of the bare sheet block 50 can be substantially aligned on the same line. In this case, a cavity bare sheet (as shown in the figure) can be disposed on the first surface side of the bare sheet block.

[0101] The cavity die 530 has a first surface that is in contact with the glass spacer 510 and a second surface that is opposite to the first surface. An electrode 540 of the cavity die 530 may be disposed on the second surface of the cavity die 530.

[0102] A pad may be provided at the end of the electrode 540 of the cavity die. The pad is referred to as the electrode pad 542 of the cavity die.

[0103] The electrodes 540 of the cavity die and the surface of the flat glass 20 can be configured to be substantially in the same plane.

[0104] The electrode 540 of the cavity die can be configured to protrude from the surface of the flat glass 20.

[0105] The height difference between the surface of the electrode pad 542 and the surface of the through electrode pad 312 of the cavity die can be within 100 μm. This difference can be less than 80 μm, less than 70 μm, less than 60 μm, less than 50 μm, less than 40 μm, less than 30 μm, or less than 20 μm. The difference can also be greater than 0 μm or greater than 1 μm. A difference of 0 μm means that the two surfaces are substantially at the same position.

[0106] Specifically, taking the surface of the electrode pad 542 of the cavity die as a reference, the surface of the through electrode pad 312 can be configured within the range of -100μm to +100μm in the thickness direction of the glass core. Taking the surface of the electrode pad 542 of the cavity die as a reference, the surface of the through electrode pad 312 can be configured within the range of -80μm to +80μm in the thickness direction of the glass core. Taking the surface of the electrode pad 542 of the cavity die as a reference, the surface of the through electrode pad 312 can be configured within the range of -70μm to +70μm in the thickness direction of the glass core. Taking the surface of the electrode pad 542 of the cavity die as a reference, the surface of the through electrode pad 312 can be configured within the range of -60μm to +60μm in the thickness direction of the glass core. With reference to the surface of the electrode pad 542 of the cavity die, the surface of the through electrode pad 312 can be configured within the range of -50 μm to +50 μm in the thickness direction of the glass core. With reference to the surface of the electrode pad 542 of the cavity die, the surface of the through electrode pad 312 can be configured within the range of -40 μm to +40 μm in the thickness direction of the glass core. With reference to the surface of the electrode pad 542 of the cavity die, the surface of the through electrode pad 312 can be configured within the range of -30 μm to +30 μm in the thickness direction of the glass core. With reference to the surface of the electrode pad 542 of the cavity die, the surface of the through electrode pad 312 can be configured within the range of -20 μm to +20 μm in the thickness direction of the glass core.

[0107] At this point, since the surface positions of the electrodes and through electrodes of the cavity die disposed within the cavity are controlled within a certain range, the formation of the subsequent wiring layers connected to them becomes easier. Furthermore, stable wiring connections can be achieved, which is more conducive to stable electrical signal connections.

[0108] If necessary, a cavity rewiring layer (not shown) may also be disposed on one or another surface of the cavity die 530. In this case, the cavity rewiring layer refers to a wiring layer formed inside the cavity. Specifically, the cavity rewiring layer may be a redistribution layer that transmits the electrical signals of the cavity die 530 to the outside of the cavity.

[0109] Dispense material 410 is disposed between the inner wall of the cavity and the bare die block. The dispense material fills the space between the inner wall of the cavity and the bare die block while fixing their relative positions.

[0110] For example, the dispensing material may be an insulating material.

[0111] Organic materials or organic-inorganic composite materials can be used as the insulating material.

[0112] The insulating material may be a polymer resin, a mixture of polymer resin and fillers (inorganic particles, organic particles, organic-inorganic composite particles, etc.), an inorganic deposition layer, etc.

[0113] The polymer resin may be acrylic resin, epoxy resin, or its modified resin, and may be a material suitable for use as molds for electronic devices. For example, liquid crystal polymer (LCP) may be used.

[0114] The mixed material may be a mixture of acrylic resin and filler, a mixture of acrylic resin-epoxy resin and filler, or a mixture of epoxy resin and filler. The filler may be inorganic particles; for example, silica particles may be used.

[0115] The dispensing material may be commercially available products such as Ajinomoto Build-up Film (ABF), Epoxy Molding Compound (EMC), Modified Polyimide (MPI), Capillary Underfill (CUF) material, Non-Conductive Films (NCF), and Non-Conductive Pastes (NCP).

[0116] The dispensing material can be deformed into a fluid form to fill the space between the inner wall of the cavity and the bare die block, and is disposed within the encapsulation glass core, and then cured. Exemplarily, the dispensing material can be made fluid by heating, disposed in an appropriate position, and then the position of the bare die block within the inner wall of the cavity can be fixed by methods such as thermosetting.

[0117] The thickness of the cavity blank 530 may be thinner than the thickness of the flat glass 20. Specifically, the thickness of the cavity blank 530 may be less than 90% of the thickness of the flat glass 20. The thickness of the cavity blank 530 may be less than 85%, 80%, 75%, 70%, 65%, 60%, 55%, 50%, 45%, 40%, 35%, 30%, or 25% of the thickness of the flat glass 20. The thickness of the cavity blank 530 may be more than 10% or 15% of the thickness of the flat glass 20. Specifically, the thickness of the cavity blank 530 may be between 50% and 60% of the thickness of the flat glass 20.

[0118] The thickness of the glass spacer 510 can be more than 10% of the thickness of the flat glass 20. The thickness of the glass spacer 510 can be more than 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or 85% of the thickness of the flat glass 20. The thickness of the glass spacer 510 can be less than 90% or less than 85% of the thickness of the flat glass 20. Specifically, the thickness of the glass spacer 510 can be between 60% and 80% of the thickness of the flat glass 20. Specifically, the thickness of the glass spacer 510 can be between 40% and 50% of the thickness of the flat glass 20.

[0119] The thickness of the glass spacer 510 can be less than 600μm, less than 550μm, less than 500μm, less than 450μm, less than 400μm, less than 350μm, less than 300μm, less than 250μm, less than 200μm, less than 150μm, less than 125μm, less than 100μm, less than 75μm, or less than 50μm. The thickness of the glass spacer 510 can be more than 5μm, more than 10μm, or more than 15μm.

[0120] Using cavity blanks and glass spacers within this range is beneficial for constructing cavities more effectively.

[0121] refer to Figure 3Td refers to the thickness from the upper surface of the cavity die 530 to the bottom surface of the glass spacer 510. When the electrodes of the cavity die protrude from the surface of the cavity die, their thickness is not included.

[0122] In this embodiment, Td can be 40 μm or more. Td can be 60 μm or more, 90 μm or more, 120 μm or more, 180 μm or more, 240 μm or more, 280 μm or more, 300 μm or more, 340 μm or more, 360 μm or more, 400 μm or more, or 430 μm or more. Td can be 500 μm or more or 460 μm or more. Td can be thinner than the thickness of the flat glass.

[0123] The thickness of the flat glass can be greater than 300μm, greater than 400μm, greater than 500μm, greater than 600μm, or greater than 700μm. The thickness of the flat glass can be less than 1500μm, less than 1400μm, less than 1300μm, less than 1200μm, less than 1100μm, or less than 1000μm.

[0124] The encapsulation glass core of the embodiment is applicable to both the cavity die and the glass spacer, thereby applying the glass stability characteristics of the substrate to the cavity die, while improving the processability of fragile flat glass, and achieving electrical connection with the cavity die through a relatively simple process, thus providing a cavity glass core with improved workability and reliability.

[0125] Packaging substrate Figure 5 This is a conceptual diagram illustrating the packaging substrate according to an embodiment, using cross-sectional view. Furthermore, Figures 1 to 4 These are concept diagrams illustrating the glass core used for packaging, shown in cross-section. Figures 1 to 4 The encapsulation glass core proposed in the paper is suitable for Figure 5 The packaging substrate. (Reference) Figures 1 to 5 Detailed description of the packaging substrate.

[0126] According to an embodiment, the packaging substrate 100 includes: a packaging glass core 90; and an upper redistribution layer 60 disposed on the packaging glass core 90.

[0127] The detailed description of the glass core 90 for encapsulation is repeated above, and the detailed description will be omitted.

[0128] The upper redistribution layer 60 includes an upper conductive layer 630 and an upper insulating layer 610. The upper conductive layer 630 is a layer formed by connecting conductive layers in a patterned manner. The upper conductive layer 630 is disposed inside the upper insulating layer 610.

[0129] An upper redistribution layer 60 is disposed on the upper part of the packaging glass core, and the redistribution layer and blind vias are configured in a predetermined shape. The redistribution layer enables signal transmission in the planar direction, and the blind vias enable signal transmission in the vertical direction (thickness direction).

[0130] The upper redistribution layer 60 can be manufactured using a redistribution layer formation process applied in the field of semiconductor technology.

[0131] A cover layer (not shown) may also be disposed above the upper redistribution layer. The cover layer is used to protect the upper redistribution layer and can be formed into a structure that can be connected to connection electrodes or solder balls, etc. Exemplarily, the cover layer may include a polyimide layer, but is not limited thereto.

[0132] The lower redistribution layer (not shown) includes a lower conductive layer and a lower insulating layer. The lower conductive layer is formed by connecting conductive layers in a patterned manner. The lower conductive layer is disposed inside the lower insulating layer.

[0133] A lower redistribution layer is disposed at the bottom of the packaging glass core, and the redistribution layer and blind vias are configured in a predetermined shape. This enables signal transmission in the planar direction, while the blind vias enable signal transmission in the vertical direction (thickness direction).

[0134] The lower redistribution layer can be manufactured using a redistribution layer formation process applied in the field of semiconductor technology.

[0135] A solder mask layer may also be disposed below the lower redistribution layer. The solder mask layer can be used to protect the lower redistribution layer and form a structure that can be connected to connection electrodes or solder balls, etc.

[0136] A semiconductor device may be disposed on the upper part of the packaging substrate. Exemplarily, the semiconductor device may include computing devices, memory devices, etc., but is not limited thereto.

[0137] The lower part of the packaging substrate can be connected to the motherboard.

[0138] In this embodiment, the packaging substrate uses a glass core and also incorporates glass spacers within the die block inside the cavity. The glass spacers fully retain the advantages of the flat glass core, exhibiting excellent dimensional stability and other properties. Furthermore, by adjusting the gap between the cavity die and the cavity space, a packaging substrate with further improved performance can be provided.

[0139] Method for manufacturing glass cores for encapsulation Figures 6a to 6c This is a conceptual diagram illustrating the manufacturing process of the bare die block according to an embodiment, using cross-section. Figures 7a to 7eThis is a conceptual diagram illustrating the manufacturing process of the encapsulation glass core according to an embodiment, using cross-section. Although Figures 6a to 6c and Figures 7a to 7e The illustration shows Figure 4 The manufacturing process of the glass core used for encapsulation can also be achieved in a similar manner. Figures 1 to 3 Manufacturing of the glass core used for encapsulation.

[0140] The manufacturing method of the encapsulation glass core 90 according to the embodiment will be described in detail with reference to the above-described drawings.

[0141] The manufacturing method of the glass core 90 for encapsulation includes a configuration step, a dispensing step, and a fixing step.

[0142] The configuration step involves configuring a flat glass plate with a cavity 40 and a bare die block 50 on a carrier 210 to obtain an assembly.

[0143] The carrier 210 is used to detachably fix the position of the flat glass 20 and the bare sheet block 50. For example, a thin film may be used.

[0144] The carrier 210 may include a support layer and an adhesive layer disposed on the support layer. The adhesive strength of the adhesive layer may change due to ultraviolet radiation.

[0145] To fix the position of the flat glass and the bare sheet in the assembly, the adhesive layer is initially held in a state that maintains its adhesive force, and then its adhesive force is weakened after a subsequent dispensing step, so that it can be easily removed from the assembly.

[0146] For example, the adhesive layer may be an adhesive layer whose adhesive strength is weakened by ultraviolet irradiation. The carrier 210 may be configured with the flat glass and the bare film block in a required step to fix their position, and after the required process is completed, in another step, the flat glass and the bare film block may be separated from the adhesive layer whose adhesive strength is weakened by ultraviolet irradiation.

[0147] The dispensing step involves placing the dispensing material 410 between the inner wall of the cavity of the assembly and the bare sheet block 50 to prepare the fixing body.

[0148] The dispensing steps may include: a first process, distributing a thin-film dispensing material between the assemblies; a second process, filling the cavity inner wall and the bare die block 50 with the dispensing material through depressurized lamination; and a third process, subjecting the assembly to one or more heat treatments to induce the curing of the dispensing material and fix the dispensing material.

[0149] The detailed description of the allocated materials is repeated above, and the detailed description will be omitted.

[0150] As described above, empty spaces can be configured in the through electrode.

[0151] At this time, the dispensing material and the insulating material applied to the empty space through the through electrode can be different materials. Alternatively, they can be the same material. If the same material is used, the steps of dispensing the material and dispensing the insulating material into the empty space through the through electrode can be performed simultaneously.

[0152] The fixing step is the step of removing the carrier 210 from the fixing body to obtain the encapsulation glass core 90.

[0153] The carrier 210 can be removed using various methods capable of removing the carrier from the aforementioned fixture. For example, when the adhesive strength of the adhesive layer weakens with ultraviolet irradiation, a glass core for encapsulation can be obtained by a relatively simple method of irradiating the fixture with ultraviolet light and peeling off the carrier film.

[0154] The bare die block 50 can be prepared through a bare die block manufacturing step.

[0155] The bare wafer manufacturing steps include: a bare wafer placement process, in which one or more cavity bare wafers 530 are spaced apart on the spacer glass 515 to prepare the placement material; and a bare wafer separation process, in which the spacer positions are cut ( Figure 6b (D) is used to separate the configured material to obtain bare sheet block 50.

[0156] Dicing can be performed using conventional methods for cutting flat glass or semiconductor devices. For example, methods such as laser treatment of the area to be cut, application of physical stress to cut, and polishing of the cut surface can be used, but are not limited to these methods.

[0157] The manufacturing process of the bare wafer block may also include a polishing step.

[0158] The polishing step can be performed after the die preparation step.

[0159] The spacer glass 515 has a first surface for arranging the cavity blank 530 and a second surface opposite to the arranging surface.

[0160] The polishing step may be a step of grinding the surface of the glass 515, which serves as the spacer, on its second surface. Figure 6b (shown as G in the middle).

[0161] The grinding can be performed using glass grinding or grinding methods suitable for semiconductor processes. For example, chemical mechanical polishing (CMP) can be used, but it is not limited to this.

[0162] A cavity die can be used in the die configuration step, wherein the electrodes of the cavity die have been formed.

[0163] Electrodes of the cavity die can be additionally formed on the cavity die. The electrodes of the cavity die can be formed using methods for forming electrodes on a package substrate. Specifically, this can be done by forming a primer layer or sputtered layer at the location where the electrode is to be formed, and then forming a copper layer at an optional location thereon. For example, although a copper layer is mentioned, the same applies to conductive layers.

[0164] For example, the copper layer can be formed by electroplating.

[0165] The location where the copper layer is formed can be obtained by etching a portion of the insulating layer.

[0166] For example, the method of manufacturing the encapsulation glass core 90 may further include an electrode forming step.

[0167] The electrode forming step is a step of forming an electrode in a hole. Specifically, it is a step of distributing a conductive layer in a through hole to form a through electrode.

[0168] The electrode forming step may be performed before the configuration step or after the fixing step. The electrode may be formed by copper plating, but is not limited to this method.

[0169] The embodiments may employ glass spacers to mitigate thickness variations when embedding bare dies into the cavity of the glass core, thereby improving workability and reliability. Furthermore, by reducing the height difference between the bare die embedded in the cavity and the surface of the glass core, redistribution layers can be formed more effectively. Simultaneously, a packaging glass core suitable for semiconductor packaging can be provided, exhibiting superior insulation properties compared to wafers and finer wiring performance compared to prepregs through the application of the glass core.

[0170] The preferred embodiments of the present invention have been described in detail above, but the scope of the present invention is not limited thereto. Various modifications and improvements made by those skilled in the art using the basic concepts of the present invention as defined in the following claims also fall within the scope of the present invention.

Claims

1. A glass core for packaging, the glass core comprising a flat glass having opposing first and second surfaces, a through-hole penetrating the flat glass in a thickness direction, and a cavity penetrating the first and second surfaces and allowing a semiconductor device to be disposed therein, characterized in that... The cavity provides a cavity space surrounded by an inner wall. The inner wall of the cavity is the inner wall surface of the flat glass that connects the first surface and the second surface of the flat glass. The bare die block is disposed in the cavity space. The bare wafer block is formed by arranging a cavity bare wafer, which serves as a bare wafer disposed within the cavity, and a glass spacer in the vertical direction. The material is dispensed between the inner wall of the cavity and the bare die block.

2. The glass core for encapsulation according to claim 1, characterized in that, The bare die block also includes a bare die adhesive layer as an adhesive layer. The bare die adhesive layer is disposed between the cavity bare die and the glass spacer.

3. The glass core for encapsulation according to claim 1, characterized in that, The bare die block has a first surface and a second surface that are opposite each other. The first surface of the flat glass and the first surface of the bare sheet block, or the second surface of the flat glass and the second surface of the bare sheet block, are substantially aligned on the same line.

4. The glass core for encapsulation according to claim 1, characterized in that, The cavity blank has a first surface that contacts the glass spacer and a second surface that is opposite to the first surface. The electrodes of the cavity die are disposed on the second surface of the cavity die.

5. The glass core for encapsulation according to claim 1, characterized in that, A cavity rewiring layer is also disposed on one or the other surface of the cavity die. The cavity redistribution layer is a redistribution layer used to transmit electrical signals from the cavity die to the outside of the cavity.

6. The glass core for encapsulation according to claim 1, characterized in that, The thickness Td of the bare die block from the upper surface of the cavity bare die to the bottom surface of the glass spacer is more than 40 μm.

7. The glass core for encapsulation according to claim 4, characterized in that, A through electrode is disposed within the through hole. The through-electrode is used to transmit electrical signals between the first and second surfaces of the flat glass. The through electrode has through electrode pads, which are disposed on at least one of the first and second surfaces of the flat glass. The pad at one end of the electrode of the cavity die is the electrode pad of the cavity die. With the surface of the through electrode pad as a reference, the surface of the electrode pad of the cavity die is arranged in the range of -100μm to +100μm in the thickness direction of the glass core.

8. A method for manufacturing a glass core for encapsulation, characterized in that, include: The configuration step involves arranging a flat glass plate with cavities and a bare die block on a carrier to obtain an assembly. The dispensing step involves obtaining a fixation body by dispensing material between the inner wall of the cavity of the assembly and the bare die block; and The fixing step involves obtaining a glass core for encapsulation by removing the carrier from the fixing body. The carrier can detachably fix the position of the flat glass and the bare sheet block. The flat glass is a flat glass having a first surface and a second surface opposite to each other. The cavity and through-hole are configured in the flat glass. The through hole penetrates the flat glass in the thickness direction. The cavity provides a cavity space surrounded by an inner wall. The inner wall of the cavity is one surface of the flat glass as viewed from the cavity, and is also the inner wall surface connecting the first surface and the second surface of the flat glass. The cavity space allows for the placement of cavity dies. The cavity die is a die disposed within the cavity. The bare die block is formed by the cavity bare die and the glass spacer arranged in the vertical direction.

9. The method for manufacturing a glass core for encapsulation according to claim 8, characterized in that, The carrier includes a support layer and an adhesive layer disposed on the support layer. The adhesive strength of the adhesive layer will change due to ultraviolet radiation.

10. The method for manufacturing a glass core for encapsulation according to claim 8, characterized in that, The bare die block is prepared through a bare die block manufacturing step; The bare die block manufacturing steps include: The bare wafer preparation process involves preparing the preparation material by spaced out one or more cavity bare wafers on the spacer glass. The bare wafer separation process involves cutting at the intervals to separate the configured material, thereby obtaining bare wafer blocks.

11. The method for manufacturing a glass core for encapsulation according to claim 10, characterized in that, A polishing step is performed after the bare die configuration step. The spacer glass has a first surface for arranging the cavity blank and a second surface opposite to the arranging surface. The polishing step is a step of grinding the surface of the second surface of the glass used as the spacer.

12. The method for manufacturing a glass core for encapsulation according to claim 8, characterized in that, The electrodes of the cavity die are electrodes disposed on one surface of the cavity die. The glass spacer has opposing first and second surfaces. The second surface of the flat glass and the second surface of the glass spacer are substantially disposed on the same plane. The electrodes of the cavity die are substantially on the same plane as the first surface of the flat glass, or protrude from the same plane.

13. The method for manufacturing a glass core for encapsulation according to claim 8, characterized in that, The allocation steps include: The first step involves placing the thin-film-shaped distribution material between the assemblies. The second process involves filling the space between the inner wall of the cavity and the bare die block using decompression lamination. The third process involves subjecting the assembly to heat treatment once or more to induce the solidification of the dispensing material and fix the dispensing material in place.

14. The method for manufacturing a glass core for encapsulation according to claim 13, characterized in that, In the flat glass of the configuration step, a through electrode is disposed in a portion of the through hole, and an empty space is disposed in the remaining portion. The allocation of the allocation material in the allocation step is performed simultaneously with the allocation of insulating material into the empty space through the electrode.

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