Thin film deposition apparatus and process with wafer protection

Abstract

The application belongs to the technical field of thin film deposition, and particularly relates to a thin film deposition device with wafer protection function and a process, which comprises a shell, a workbench, an air curtain isolation assembly and a particle prevention gas supply assembly. The air curtain isolation assembly comprises an annular air groove. The workbench top is uniformly provided with a group of air nozzles. The particle prevention gas supply assembly comprises a gas guide disc. The top of the gas guide disc is connected with a gas guide column. The top of the gas guide column is connected with a conveying port. The bottom of the gas guide disc is fixedly connected with a special-shaped cover. The surface of the special-shaped cover is uniformly provided with a group of guide holes. After the tiny solid particle impurities generated on the inner wall of the gas guide disc fall off, the impurities are usually blocked on the upper side of the special-shaped cover and are difficult to fall on the wafer surface through the guide holes. The wafer is protected, the potential particle impurities are effectively isolated from the wafer surface, the risk of wafer pollution caused by particles is reduced, and an additional protection barrier is provided for high-quality thin film deposition of the wafer.

Description

Technical Field

[0001] This invention belongs to the field of thin film deposition technology, specifically a thin film deposition equipment and process with wafer protection function. Background Technology

[0002] In semiconductor manufacturing, thin film deposition is a crucial process step aimed at forming thin films with specific electrical, optical, or mechanical properties on the wafer surface. This technology is one of the core processes in front-end chip manufacturing. By alternately stacking insulating dielectric films and conductive metal films on the wafer surface, it provides a foundation for subsequent pattern transfer processes such as photolithography and etching, ultimately forming complex multilayer circuit structures. Therefore, it is often regarded as an "additive process" in manufacturing.

[0003] Chinese patent application CN101755073B discloses a reactor for depositing thin films on a wafer. The key technical points are: a substrate support unit is rotatably mounted inside the reactor and has multiple substrate-bearing portions, each supporting multiple substrates. A gas injection unit includes: multiple source gas injectors to provide at least two different source gases to the substrate support unit; and multiple flushing gas injectors disposed between the source gas injectors to provide flushing gas to the substrate support unit. The source gas injectors and flushing gas injectors are radially mounted on the substrate support unit. An exhaust unit is arranged annularly around the outer periphery of the substrate support unit and includes: an exhaust channel with multiple exhaust ports to guide and exhaust at least two source gases to the outside of the reactor; and multiple baffles installed within the exhaust channel to divide the exhaust channel into multiple isolated exhaust paths, thereby discharging at least two source gases provided by the multiple source gas injectors to the outside via different paths.

[0004] However, existing thin film deposition equipment typically delivers process gas to the wafer surface through a gas guide structure. This results in the film being deposited not only on the wafer surface but also on the inner wall of the gas guide structure. After long-term operation, the thick film accumulated on the inner wall of the chamber may detach, and the detached particles will contaminate the wafer surface, seriously affecting the film quality and increasing the frequency and cost of equipment maintenance.

[0005] Therefore, the present invention provides a thin film deposition equipment and process with wafer protection function. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0007] The technical solution adopted by the present invention to solve its technical problem is: a thin film deposition equipment with wafer protection function, comprising a housing, a worktable, an air curtain isolation assembly, and an anti-particle air supply assembly; The top of the housing is provided with a top cover; the surface of the top cover is provided with an exhaust port; The workbench is fixedly connected to the bottom of the housing; a heating module is installed inside the workbench; a tray for supporting wafers is installed on the upper side of the heating module; The air curtain isolation assembly includes an annular air groove inside the workbench; a delivery pipe is connected to one side of the annular air groove; a set of air nozzles are evenly distributed on the top of the workbench, and the air nozzles are connected to the annular air groove. The particulate-proof gas supply assembly introduces process gas into the housing for thin film deposition; the particulate-proof gas supply assembly includes a gas guide plate; the top of the gas guide plate is connected to a gas guide column; the top of the gas guide column is connected to a delivery port; a shaped cover is fixedly connected to the bottom of the gas guide plate; the shaped cover is designed as a conical shape with a high middle and low edges; a set of guide holes are evenly distributed on the surface of the shaped cover.

[0008] Preferably, the upper side of the irregularly shaped cover is provided with a boss at the position corresponding to the guide hole.

[0009] Preferably, a set of slag discharge grooves are evenly distributed between the edge of the air guide plate and the irregular-shaped cover; an annular slag storage box is fixedly connected to the outer bottom of the air guide plate; and alignment openings are provided on the surface of the slag storage box at the corresponding positions of the slag discharge grooves.

[0010] Preferably, a set of air inlets and air outlets are evenly distributed on the lower and upper sides of the slag storage box.

[0011] Preferably, an annular outer capture plate and an inner capture plate are fixedly connected to the lower side of the slag storage box; the air inlet is located between the outer capture plate and the inner capture plate; the bottom of the outer capture plate and the inner capture plate are open, and the top of the outer capture plate and the inner capture plate are closed.

[0012] Preferably, a grid plate is fixedly connected between the outer capturing plate and the inner capturing plate; a set of limiting rods are evenly distributed on the upper side of the grid plate, and the limiting rods extend into the slag storage box through the air inlet; a sealing component is provided at the top of the air inlet; the sealing component is sleeved on the outside of the limiting rod and slidably connected to it; a spring is fixedly connected between the sealing component and the grid plate.

[0013] Preferably, a sealing plate is hinged inside the alignment opening by a torsion spring; a guide wheel is provided at the top of the limiting rod; a pull rope is fixedly connected between the sealing component and the sealing plate, and the pull rope passes around the guide wheel.

[0014] Preferably, a set of paddles are evenly distributed on the side of the sealing component.

[0015] A thin film deposition process with wafer protection function, the process using the above-mentioned thin film deposition equipment, includes the following steps: S1. Process gas is introduced through the delivery port. The gas enters the gas guide plate through the gas guide column, is evenly dispersed between the gas guide plate and the shaped cover, and is delivered downward to the wafer surface at a stable flow rate through multiple guide holes. S2. Inert gas is transported to the annular gas tank through the delivery pipe. The gas in the annular gas tank is sprayed upward through the gas nozzles evenly distributed on the top of the workbench to form an annular air curtain. S3. Solid particulate impurities generated on the inner wall of the air guide plate will be blocked on the upper side of the shaped cover after falling off. They will slide down along the edge of the air guide plate on the surface of the shaped cover and enter the slag storage box for collection through various slag discharge channels and alignment ports. S4. When the inert gas enters the channel between the outer and inner capture plates upward, the airflow acts on the sealing component, causing the sealing component to overcome the spring and move upward along the limit rod, opening the air inlet. S5. Inert gas enters the slag storage box through the air inlet, generating an upward lifting force on the particulate impurities collected inside the slag storage box. The airflow carries the particles out through the air outlet on the upper side of the slag storage box.

[0016] The beneficial effects of this invention are as follows: 1. The thin film deposition equipment and process with wafer protection function described in this invention addresses the issue that after long-term use, tiny solid particle impurities are deposited on the inner wall of the gas guide plate. After falling off, these particles are usually blocked on the upper side of the irregularly shaped cover and are unlikely to fall onto the wafer surface through the guide holes, thus providing protection for the wafer. This structural design utilizes the special shape of the irregularly shaped cover to effectively isolate potential particle impurities from the wafer surface, reducing the risk of particle contamination of the wafer and providing an additional protective barrier for high-quality thin film deposition on the wafer.

[0017] 2. The thin film deposition equipment and process with wafer protection function described in this invention allows solid particles to slide down from the upper surface of the irregularly shaped cover to its edge under the action of gravity, and then smoothly enter the slag discharge tank. The bottom of the slag discharge tank is designed with a certain inclination angle to ensure that the particles entering the tank can slide smoothly down the tank body by their own gravity. The alignment port on the slag storage box is precisely matched with the outlet end of the slag discharge tank, so that the particles sliding down from the slag discharge tank can pass through the alignment port into the slag storage box for collection without obstruction. This achieves directional guidance and centralized collection of detached particle impurities, effectively avoiding secondary pollution that may be caused by particles randomly scattering inside the gas guide plate, further improving the protection effect of the wafer, and also facilitating subsequent cleaning of impurities and equipment maintenance.

[0018] 3. The thin film deposition equipment and process with wafer protection function described in this invention allows the upward-moving inert gas generated by the air curtain isolation component to enter the slag storage box through the air inlet, forming an upward airflow inside the slag storage box. This upward airflow exerts an upward lifting force on the particulate impurities collected inside the slag storage box. The airflow carries the particles out through the air outlet on the upper side of the slag storage box, enters the housing, and is finally discharged with the exhaust gas through the exhaust port of the top cover. This reduces the accumulation of particles in the slag storage box, achieves dynamic management of particles in the slag storage box, and improves the efficiency of impurity cleaning. Attached Figure Description

[0019] The invention will now be further described with reference to the accompanying drawings.

[0020] Figure 1 This is a perspective view of the present invention; Figure 2 This is a schematic diagram of the structure of the air curtain isolation component and the particulate air supply component in this invention; Figure 3 This is a schematic diagram of the structure of the workbench and air guide plate in this invention; Figure 4 This is a schematic diagram of the slag storage box in this invention; Figure 5 This is a schematic diagram of the irregularly shaped cover in this invention; Figure 6 This is a cross-sectional view of the present invention; Figure 7 This is a partial cross-sectional view of the air guide plate in this invention; Figure 8 yes Figure 7 Enlarged view of a portion of point A in the middle; Figure 9 This is a schematic diagram of the process flow of the present invention.

[0021] In the diagram: 1. Housing; 2. Workbench; 3. Top cover; 4. Exhaust port; 5. Heating module; 6. Wafer; 7. Tray; 8. Annular air groove; 9. Conveying pipe; 10. Air nozzle; 11. Air guide plate; 12. Air guide column; 13. Conveying port; 14. Irregularly shaped cover; 15. Guide hole; 16. Boss; 17. Slag discharge groove; 18. Slag storage box; 19. Alignment port; 20. Air inlet; 21. Air outlet; 22. Outer capture plate; 23. Inner capture plate; 24. Mesh plate; 25. Limiting rod; 26. Sealing component; 27. Spring; 28. Sealing plate; 29. ​​Guide wheel; 30. Pull rope; 31. Paddle. Detailed Implementation

[0022] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0023] like Figures 1 to 8As shown, the thin film deposition equipment with wafer protection function according to the present invention includes a housing 1, a worktable 2, an air curtain isolation assembly, and an anti-particle air supply assembly; The top of the housing 1 is provided with a top cover 3; the surface of the top cover 3 is provided with an exhaust port 4; The workbench 2 is fixedly connected to the bottom of the housing 1; a heating module 5 is provided inside the workbench 2; a tray 7 for supporting the wafer 6 is provided on the upper side of the heating module 5; The air curtain isolation assembly includes an annular air groove 8 opened inside the workbench 2; a conveying pipe 9 is connected to one side of the annular air groove 8; a set of air nozzles 10 are evenly distributed on the top of the workbench 2, and the air nozzles 10 are connected to the annular air groove 8. The particulate-proof gas supply assembly introduces process gas into the housing 1 for thin film deposition; the particulate-proof gas supply assembly includes a gas guide plate 11; the top of the gas guide plate 11 is connected to a gas guide column 12; the top of the gas guide column 12 is connected to a delivery port 13; a shaped cover 14 is fixedly connected to the bottom of the gas guide plate 11; the shaped cover 14 is designed as a conical shape with a high middle and low edges; a set of guide holes 15 are evenly distributed on the surface of the shaped cover 14.

[0024] In existing thin film deposition equipment, process gases are typically delivered to the surface of wafer 6 via a gas guiding structure. This results in thin films being deposited not only on the surface of wafer 6 but also on the inner wall of the gas guiding structure. After long-term operation, the thick film accumulated on the inner wall of the chamber may detach, and the detached particles will contaminate the surface of wafer 6, seriously affecting the quality of the thin film and increasing the frequency and cost of equipment maintenance.

[0025] During operation, the wafer 6 is placed on the tray 7, and the heating module 5 heats it to the required process temperature. The anti-particle gas supply component receives the process gas through the delivery port 13. The gas enters the gas guide plate 11 through the gas guide column 12, is evenly dispersed between the gas guide plate 11 and the irregular cover 14, and is delivered downward to the surface of the wafer 6 at a stable flow rate through multiple guide holes 15, providing a uniform gas source environment for thin film deposition. At the same time, the air curtain isolation component starts to work. The external gas source delivers inert gas to the annular gas groove 8 through the delivery pipe 9. The gas in the annular gas groove 8 is sprayed upward through the evenly distributed air nozzles 10 on the top of the worktable 2, forming an annular air curtain, which effectively isolates the deposition area above the worktable 2 from other spaces inside the housing 1, preventing impurities or air from the external environment from entering the deposition area and contaminating the wafer 6, and preventing the process gas in the deposition area from leaking out and contaminating the environment. During the entire thin film deposition process, the waste gas in the housing 1 is discharged in time through the exhaust port 4 on the surface of the top cover 3, ensuring the stability of the gas pressure and gas environment inside the housing 1.

[0026] Because the irregularly shaped cover 14 is a conical shape with a high center and low edges, even if tiny solid particles of impurities are deposited on the inner wall of the air guide plate 11 after long-term use of this equipment, they will usually be blocked on the upper side of the irregularly shaped cover 14 as the particles fall off, and it is difficult for them to fall onto the surface of the wafer 6 through the guide hole 15. This provides protection for the wafer 6. This structural design utilizes the special shape of the irregularly shaped cover 14 to effectively isolate potential particulate impurities from the surface of the wafer 6, reducing the risk of particulate contamination of the wafer 6 and providing an additional protective barrier for the high-quality thin film deposition of the wafer 6.

[0027] Each of the irregularly shaped covers 14 has a boss 16 at the position corresponding to the guide hole 15 on its upper side.

[0028] The boss 16 is distributed in a ring around the guide hole 15, and its height is slightly higher than the upper surface of the irregular cover 14. When the tiny solid particles generated by the inner wall of the gas guide plate 11 fall off, they slide down the edge of the gas guide plate 11 on the upper side of the inclined irregular cover 14 under the action of gravity. The particles will come into contact with the side of the boss 16. The boss 16 can block the rolling particles, further reducing the possibility that the particles will cross the area of ​​the guide hole 15 and eventually fall on the surface of the wafer 6.

[0029] In one embodiment of the present invention, a set of slag discharge grooves 17 are evenly distributed between the edge of the air guide plate 11 and the irregular cover 14; an annular slag storage box 18 is fixedly connected to the outer side of the bottom of the air guide plate 11; and alignment openings 19 are provided on the surface of the slag storage box 18 at the corresponding positions of the slag discharge grooves 17.

[0030] When solid particles slide down from the upper surface of the irregular cover 14 to its edge under the action of gravity, they can smoothly enter the slag discharge trough 17. The bottom of the slag discharge trough 17 is designed with a certain inclination angle to ensure that the particles entering the trough can slide smoothly down the trough body by their own gravity. The alignment port 19 on the slag storage box 18 is precisely matched with the outlet end of the slag discharge trough 17, so that the particles sliding down from the slag discharge trough 17 can enter the slag storage box 18 without obstruction through the alignment port 19 for collection. This achieves directional guidance and centralized collection of detached particle impurities, effectively avoiding secondary pollution that may be caused by particles randomly scattering inside the air guide plate 11, further improving the protection effect of the wafer 6, and also facilitating subsequent cleaning of impurities and equipment maintenance.

[0031] The slag storage box 18 has a set of air inlets 20 and air outlets 21 evenly distributed on its lower and upper sides, respectively.

[0032] The upward-moving inert gas generated by the air curtain isolation component can enter the slag storage box 18 through the air inlet 20 and form an upward airflow inside the slag storage box 18. This upward airflow exerts an upward lifting force on the particulate impurities collected inside the slag storage box 18. The airflow carries the particles out through the air outlet 21 on the upper side of the slag storage box 18, enters the housing 1, and is finally discharged with the exhaust gas through the exhaust port 4 of the upper cover 3. This reduces the accumulation of particles in the slag storage box 18, realizes dynamic management of particles in the slag storage box 18, and improves the efficiency of impurity cleaning.

[0033] In one embodiment of the present invention, an annular outer capture plate 22 and an inner capture plate 23 are fixedly connected to the lower side of the slag storage box 18; the air inlet 20 is located between the outer capture plate 22 and the inner capture plate 23; the bottom of the outer capture plate 22 and the inner capture plate 23 are open and the top of the outer capture plate 22 and the inner capture plate 23 are closed.

[0034] By setting the outer capture plate 22 and the inner capture plate 23, an annular capture area is formed on the lower side of the slag storage box 18 to capture the upward-moving inert gas, thereby improving the efficiency of the airflow entering the air inlet 20. Furthermore, an upward-converging airflow channel is formed between the outer capture plate 22 and the inner capture plate 23. When the inert gas enters from the bottom opening, the airflow will have a certain acceleration effect due to the top convergence, which enhances the upward lifting ability of the airflow and improves the cleaning efficiency of the airflow on the particles in the slag storage box 18.

[0035] In one embodiment of the present invention, a grid plate 24 is fixedly connected between the outer capturing plate 22 and the inner capturing plate 23; a set of limiting rods 25 are evenly distributed on the upper side of the grid plate 24, and the limiting rods 25 extend into the slag storage box 18 through the air inlet 20; a sealing member 26 is provided at the top of the air inlet 20; the sealing member 26 is sleeved on the outside of the limiting rods 25 and slidably connected thereto; a spring 27 is fixedly connected between the sealing member 26 and the grid plate 24.

[0036] When the inert gas flow generated by the air curtain isolation assembly enters the channel between the outer capture plate 22 and the inner capture plate 23, the airflow acts on the sealing member 26. Under the thrust of the airflow, the sealing member 26 overcomes the elastic force of the spring 27 and slides upward along the limiting rod 25, thereby opening the air inlet 20. This allows the airflow to smoothly pass through the air inlet 20 and enter the slag storage box 18. Furthermore, the bottom of the sealing member 26 is designed to be spherical, which disperses the airflow as it moves upward through the air inlet 20, allowing the airflow to enter... After entering the slag storage box 18, it can move from the bottom to the air outlet 21 in a split manner, so as to carry out the particulate matter in the slag storage box 18 as much as possible. When the air curtain isolation component stops working and the airflow disappears, the elastic restoring force of the spring 27 will push the sealing part 26 to slide down along the limit rod 25 until the sealing part 26 re-seals the air inlet 20, effectively preventing particulate impurities inside the slag storage box 18 from falling down through the air inlet 20 when not in operation, further ensuring the collection effect of the slag storage box 18 on particulate impurities.

[0037] In one embodiment of the present invention, a sealing piece 28 is hinged inside the alignment port 19 by a torsion spring; a guide wheel 29 is provided on the top of the limiting rod 25; a pull rope 30 is fixedly connected between the sealing member 26 and the sealing piece 28, and the pull rope 30 passes around the guide wheel 29.

[0038] During equipment operation, the upward-moving inert gas pushes open the sealing component 26, causing it to move upward along the limiting rod 25. This releases the pull rope 30, and the sealing plate 28, under the action of the torsion spring, moves towards the slag discharge trough 17 and covers it. At this time, the slag storage box 18 and the air guide plate 11 are isolated. The inert gas flow entering the slag storage box 18 through the air inlet 20 carries away particulate matter, but the airflow does not enter the air guide plate 11 through the alignment port 19 and the slag discharge trough 17. This avoids interference from the airflow with the process gas within the air guide plate 11, ensuring the stability and uniformity of the process gas delivery, and preventing the airflow from re-carrying particulate impurities from the slag storage box 18 into the air guide plate 11. This process causes secondary pollution. During this process, new particles generated in the air guide plate 11 will accumulate on one side of the sealing plate 28 in the slag discharge trough 17. When the equipment stops working and the air curtain isolation component no longer provides inert gas, the sealing component 26 will reset downward under the action of the spring 27. At this time, the pull rope 30 will be tightened. The pull rope 30 will drive the sealing plate 28 to overcome the elastic force of the torsion spring and rotate into the slag storage box 18, opening the alignment port 19. This allows the particulate impurities that have accumulated or newly fallen off in the slag discharge trough 17 to enter the slag storage box 18 for collection through the slag discharge trough 17 and the alignment port 19. This achieves dynamic sealing and collection switching of particulate impurities, further improving the reliability of the equipment and the protection effect on the wafer 6.

[0039] A set of paddles 31 are evenly distributed on the side of the sealing component 26.

[0040] When the sealing component 26 moves upward, it can drive the paddle 31 to move together. In turn, the paddle 31 can move the particulate impurities inside the slag storage box 18, so that the particles that may have accumulated or stuck to the inner wall of the slag storage box 18 are stirred up and are more easily carried by the upward airflow and discharged from the air outlet 21, thereby improving the cleaning effect of the particles inside the slag storage box 18 and preventing impurities from accumulating for a long time and affecting the performance of the equipment.

[0041] like Figure 9 As shown, a thin film deposition process with wafer protection function, which uses the aforementioned thin film deposition equipment, includes the following steps: S1. Process gas is introduced through the delivery port 13. The gas enters the gas guide plate 11 through the gas guide column 12, is evenly dispersed between the gas guide plate 11 and the irregular cover 14, and is delivered downward to the surface of the wafer 6 through multiple guide holes 15 at a stable flow rate. S2. Inert gas is transported to an annular gas trough 8 through the conveying pipe 9. The gas in the annular gas trough 8 is sprayed upward through the gas nozzles 10 evenly distributed on the top of the workbench 2 to form an annular air curtain. S3. Solid particulate impurities generated on the inner wall of the air guide plate 11 will be blocked on the upper side of the shaped cover 14 after falling off. They will slide down along the edge of the air guide plate 11 on the surface of the shaped cover 14 and enter the slag storage box 18 for collection through each slag discharge groove 17 and alignment port 19. S4. When the inert gas enters the channel between the outer capture plate 22 and the inner capture plate 23 upward, the airflow acts on the sealing member 26, causing the sealing member 26 to overcome the spring 27 and move upward along the limit rod 25, opening the air inlet 20. S5. Inert gas enters the slag storage box 18 through the air inlet 20, generating an upward lifting force on the particulate impurities collected inside the slag storage box 18. The airflow carries the particles out from the air outlet 21 on the upper side of the slag storage box 18.

[0042] The terms "front," "back," "left," "right," "top," and "bottom" all refer to the figures in the accompanying drawings. Figure 1 Based on the perspective of the observer, the side of the device facing the observer is defined as the front, the left side of the observer is defined as the left, and so on.

[0043] In the description of this invention, it should be understood that the terms "center", "longitudinal", "lateral", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the scope of protection of this invention.

[0044] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A thin film deposition apparatus with wafer protection function, characterized in that: Includes housing (1), workbench (2), air curtain isolation assembly, and particulate air supply assembly; The top of the housing (1) is provided with a top cover (3); the surface of the top cover (3) is provided with an exhaust port (4); The workbench (2) is fixedly connected to the bottom of the housing (1); a heating module (5) is provided inside the workbench (2); a tray (7) for supporting the wafer (6) is provided on the upper side of the heating module (5); The air curtain isolation assembly includes an annular air groove (8) opened inside the workbench (2); a conveying pipe (9) is connected to one side of the annular air groove (8); a set of air nozzles (10) are evenly distributed on the top of the workbench (2), and the air nozzles (10) are connected to the annular air groove (8). The particulate-proof gas supply assembly introduces process gas into the housing (1) for thin film deposition; the particulate-proof gas supply assembly includes a gas guide plate (11); the top of the gas guide plate (11) is connected to a gas guide column (12); the top of the gas guide column (12) is connected to a delivery port (13); the bottom of the gas guide plate (11) is fixedly connected to a shaped cover (14); the shaped cover (14) is designed as a conical shape with a high middle and low edges; a set of guide holes (15) are evenly distributed on the surface of the shaped cover (14).

2. The thin film deposition equipment with wafer protection function according to claim 1, characterized in that: The irregularly shaped cover (14) is provided with a boss (16) at the corresponding position of the guide hole (15) on the upper side.

3. A thin film deposition apparatus with wafer protection function according to claim 1, characterized in that: A set of slag discharge grooves (17) are evenly distributed between the edge of the air guide plate (11) and the irregular cover (14); an annular slag storage box (18) is fixedly connected to the outer side of the bottom of the air guide plate (11); and an alignment opening (19) is opened on the surface of the slag storage box (18) at the corresponding position of the slag discharge groove (17).

4. A thin film deposition apparatus with wafer protection function according to claim 3, characterized in that: The slag storage box (18) has a set of air inlets (20) and air outlets (21) evenly distributed on its lower and upper sides, respectively.

5. A thin film deposition apparatus with wafer protection function according to claim 4, characterized in that: The slag storage box (18) is fixedly connected to an annular outer capture plate (22) and an inner capture plate (23) on its lower side; the air inlet (20) is located between the outer capture plate (22) and the inner capture plate (23); the bottom of the outer capture plate (22) and the inner capture plate (23) are open, and the top of the outer capture plate (22) and the inner capture plate (23) are closed.

6. A thin film deposition apparatus with wafer protection function according to claim 5, characterized in that: A grid plate (24) is fixedly connected between the outer capture plate (22) and the inner capture plate (23); a set of limiting rods (25) are evenly distributed on the upper side of the grid plate (24), and the limiting rods (25) extend into the slag storage box (18) through the air inlet (20); a sealing member (26) is provided at the top of the air inlet (20); the sealing member (26) is sleeved on the outside of the limiting rod (25) and slidably connected thereto; a spring (27) is fixedly connected between the sealing member (26) and the grid plate (24).

7. A thin film deposition apparatus with wafer protection function according to claim 6, characterized in that: The alignment opening (19) is hinged with a sealing plate (28) by a torsion spring; the top of the limiting rod (25) is provided with a guide wheel (29); a pull rope (30) is fixedly connected between the sealing component (26) and the sealing plate (28), and the pull rope (30) passes around the guide wheel (29).

8. A thin film deposition apparatus with wafer protection function according to claim 6, characterized in that: The sealing component (26) has a set of paddles (31) evenly distributed on its side.

9. A thin film deposition process with wafer protection function, wherein the process uses the thin film deposition equipment according to any one of claims 1-8, characterized in that: Includes the following steps: S1. Process gas is introduced through the delivery port (13). The gas enters the gas guide plate (11) through the gas guide column (12), is evenly dispersed between the gas guide plate (11) and the shaped cover (14), and is delivered downward to the surface of the wafer (6) at a stable flow rate through multiple guide holes (15). S2. Inert gas is transported to the annular gas tank (8) through the delivery pipe (9). The gas in the annular gas tank (8) is sprayed upward through the gas nozzles (10) evenly distributed on the top of the workbench (2) to form an annular air curtain. S3. Solid particulate impurities generated on the inner wall of the air guide plate (11) will be blocked on the upper side of the shaped cover (14) after falling off. They will slide down along the surface of the shaped cover (14) to the edge of the air guide plate (11) and enter the slag storage box (18) through each slag discharge groove (17) and alignment port (19) for collection.

10. A thin film deposition process with wafer protection function according to claim 9, characterized in that: It also includes the following steps: S4. When the inert gas enters the channel between the outer capture plate (22) and the inner capture plate (23) upward, the airflow acts on the sealing member (26), causing the sealing member (26) to overcome the spring (27) and move upward along the limit rod (25), opening the air inlet (20). S5. Inert gas enters the slag storage box (18) through the air inlet (20), generating an upward lifting force on the particulate impurities collected inside the slag storage box (18). The airflow carries the particles out from the air outlet (21) on the upper side of the slag storage box (18).

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