Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program product

Abstract

A substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a program product capable of uniformly processing a whole substrate. It includes a supply process and an exhaust process; the supply process includes (a0) a process of supplying a processing gas into a processing chamber in which a substrate having a recess on a surface is disposed inside, (a1) a process of increasing a pressure in the processing chamber at least partly simultaneously with (a0), (a2) a process of decreasing the pressure in the processing chamber, and (b) a process of supplying a dilution gas into the processing chamber or increasing a flow rate of the dilution gas supplied into the processing chamber; the supply process is performed so that the pressure in the processing chamber takes one or more maximum values; in the exhaust process, the processing chamber is exhausted at least partly during the supply process; in the supply process, (b) is started before the first (a2) ends.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing apparatus, and a process product. Background Technology

[0002] As a step in the manufacturing process of a semiconductor device or a substrate processing process, there are sometimes situations where, when processing gas is supplied to a processing chamber in which a substrate is disposed, the pressure inside the processing chamber increases and then decreases (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2004-006801 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique that can uniformly process the entire substrate.

[0008] Methods for solving problems

[0009] According to one aspect of this disclosure, a technology is provided that includes a supply step and an exhaust step; the supply step includes (a0) supplying a processing gas into a processing chamber having a substrate having recesses on its surface disposed inside, (a1) and (a0) simultaneously increasing the pressure in the processing chamber in at least a portion, (a2) decreasing the pressure in the processing chamber, and (b) supplying a dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied to the processing chamber; the supply step is performed to make the pressure in the processing chamber reach one or more maximum values; in the exhaust step, at least a portion of the supply step is used to exhaust the processing chamber; and in the supply step, (b) begins before the end of the first (a2).

[0010] Invention Effects

[0011] According to this disclosure, the entire substrate can be processed uniformly. Attached Figure Description

[0012] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a processing apparatus preferred in one embodiment of the present disclosure, showing the processing furnace 202 portion in a longitudinal cross-sectional view.

[0013] Figure 2This is a schematic structural diagram of the controller 121 of the processing device preferred in one aspect of this disclosure, and a diagram of the control system of the controller 121 shown in block diagram.

[0014] Figure 3 This is a diagram illustrating an example of the gas supply flow for the film-forming process in one embodiment of the present disclosure.

[0015] Figure 4 This is a diagram showing the pressure changes, etc., within the processing chamber 201 of the supply process in one embodiment of this disclosure.

[0016] Figure 5 This is a diagram showing the pressure changes, etc., within the processing chamber 201 of the supply process in a variation of this disclosure.

[0017] Explanation of reference numerals in the attached figures

[0018] 200: Wafer (substrate), 201: Processing chamber. Detailed Implementation

[0019] <One way this disclosure>

[0020] The following is mainly based on Figures 1-5 One aspect of this disclosure will be described. It should be noted that the accompanying drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements may not be consistent across multiple drawings.

[0021] (1) Structure of the processing device

[0022] like Figure 1 As shown, the processing furnace 202 of the processing apparatus has a heater 207 that functions as a temperature regulator (heating unit). The heater 207 is cylindrical and is vertically mounted by being supported by a retaining plate. The heater 207 also functions as an activation mechanism (activation unit) that activates (excites) the gas by heat.

[0023] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape that is closed at the top and open at the bottom. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The upper end of the manifold 209 is configured to engage with the lower end of the reaction tube 203, supporting the reaction tube 203. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201, on which a wafer 200, serving as a substrate, is formed in the hollow part of the processing container. The processing chamber 201 is configured to accommodate a plurality of wafers 200, which serve as substrates, in a configuration in a direction perpendicular to the surface of the wafers 200. The wafers 200 are processed within this processing chamber 201.

[0024] Nozzles 249a and 249b, serving as a first supply section and a second supply section, are respectively provided in the processing chamber 201, penetrating the side wall of the manifold 209. Nozzles 249a and 249b are also referred to as the first nozzle and the second nozzle, respectively. Nozzles 249a and 249b are made of heat-resistant materials such as quartz or SiC. Nozzles 249a and 249b are arranged adjacent to each other.

[0025] Gas supply pipes 232a and 232b, serving as gas supply paths, are connected to nozzles 249a and 249b, respectively. In gas supply pipe 232a, starting from the upstream side of the gas flow, a gas supply source (not shown), a mass flow controller (MFC) 241a (flow controller unit), a valve 243a (on / off valve), a first storage unit 260a configured to temporarily store gas, and a valve 247a (first valve) are arranged sequentially. Gas supply pipe 232c is connected downstream of valve 247a from gas supply pipe 232a. In gas supply pipe 232c, serving as a gas supply path, starting from the upstream side of the gas flow, a gas supply source (not shown), an MFC 241c, and a valve 243c are arranged sequentially.

[0026] The flow channels between the first storage section 260a and the processing chamber 201 are preferably configured, for example, 1.5 × 10⁻⁶. -3 m 3 / s or more. Furthermore, considering the ratio of the volume of the processing chamber 201 to the volume of the first storage section 260a, when the volume of the processing chamber 201 is 100L, the volume of the first storage section 260a is preferably, for example, 100 to 300cc, preferably a size that is, for example, 1 / 1000 to 3 / 1000 times the volume of the processing chamber 201. The same applies to the second storage section 260d, which will be described later. It should be noted that the expression of a numerical range such as "100 to 300cc" in this specification refers to the lower and upper limits being included within that range. Therefore, for example, "100 to 300cc" means "more than 100cc and less than 300cc". The same applies to other numerical ranges.

[0027] In gas supply pipe 232b, a gas supply source (not shown), MFC 241b, and valve 243b are sequentially arranged from the upstream side of the airflow. Gas supply pipes 232d and 232e, serving as gas supply paths, are connected to gas supply pipes 232b downstream of valve 243b. In gas supply pipe 232d, a gas supply source (not shown), MFC 241d, valve 243d, a second storage section 260d configured to temporarily store gas, and valve 247d, serving as a second valve, are sequentially arranged from the upstream side of the airflow. In gas supply pipe 232e, a gas supply source (not shown), MFC 241e, and valve 243e are sequentially arranged from the upstream side of the airflow.

[0028] Nozzles 249a and 249b are respectively positioned in the space between the inner wall of the reaction tube 203 and the wafer 200, and are arranged upright towards the arrangement direction of the wafer 200 at a position higher than the lower part of the inner wall of the reaction tube 203. Gas supply holes 250a and 250b for supplying (ejecting) gas are respectively provided on the sides of nozzles 249a and 249b. Gas supply holes 250a and 250b are respectively opened opposite (facing) the exhaust port 231a (described later) when viewed from above, and are capable of supplying gas. Multiple gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0029] The raw gas used as the processing gas is supplied from the gas supply pipe 232a into the processing chamber 201 via MFC 241a, valve 243a, first storage unit 260a, valve 247a, and nozzle 249a.

[0030] The reactant gas, which is used as the processing gas, is supplied from the gas supply pipe 232b to the processing chamber 201 via MFC 241b, valve 243b, and nozzle 249b.

[0031] Inactive gases are supplied to the treatment chamber 201 from gas supply pipes 232c and 232e via MFCs 241c and 241e, valves 243c and 243e, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. The inactive gases function as purge gases, carrier gases, etc.

[0032] Diluent gas is supplied to the processing chamber 201 from gas supply pipe 232d via MFC 241d, valve 243d, second storage section 260d, valve 247d, and nozzle 249b. Diluent gas functions as a gas that reduces the mole fraction of the processing gas (raw material gas) and the like in the processing chamber 201.

[0033] The raw material gas supply system mainly consists of gas supply pipe 232a, MFC 241a, valve 243a, and first storage unit 260a. The reaction gas supply system mainly consists of gas supply pipe 232b, MFC 241b, and valve 243b. The inactive gas supply system mainly consists of gas supply pipes 232c and 232e, MFC 241c and 241e, and valves 243c and 243e. The dilution gas supply system mainly consists of gas supply pipe 232d, MFC 241d, valve 243d, second storage unit 260d, and valve 247d. The raw material gas supply system, reaction gas supply system, and dilution gas supply system are collectively referred to as the supply system. Alternatively, the gas supply source can be included within the supply system.

[0034] Any one or all of the aforementioned supply systems can also be configured as an integrated supply system 248, which integrates valves 243a-243e, 247a, 247d, MFCs 241a-241e, a first storage unit 260a, and a second storage unit 260d. The integrated supply system 248 is connected to gas supply pipes 232a-232e respectively, and is configured such that the controller 121 described later controls the supply of various substances (various gases) to the gas supply pipes 232a-232e, the first storage unit 260a, and the second storage unit 260d, i.e., the opening and closing of valves 243a-243e, 247a, and 247d, and the flow rate adjustment by MFCs 241a-241e.

[0035] An exhaust port 231a for venting the atmosphere inside the processing chamber 201 is provided below the side wall of the reaction tube 203. When viewed from above, the exhaust port 231a is positioned opposite (facing) the nozzles 249a and 249b (gas supply ports 250a and 250b) sandwiching the wafer 200. An exhaust pipe 231 is connected to the exhaust port 231a. A vacuum pump 246, serving as a vacuum venting device, is connected to the exhaust pipe 231 via a pressure sensor 245 (which acts as a pressure detector, pressure detection unit) and an APC (Auto Pressure Controller) valve 244 (which acts as a pressure regulator, pressure adjustment unit). The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum venting and vacuum venting cessation can be performed within the processing chamber 201. Furthermore, while the vacuum pump 246 is operating, the valve opening is adjusted based on the pressure information detected by the pressure sensor 245, thereby adjusting the pressure inside the processing chamber 201. The exhaust system mainly consists of an exhaust pipe 231, an APC valve 244, and a pressure sensor 245. Alternatively, a vacuum pump 246 can be included in the exhaust system.

[0036] A sealing cover 219, serving as a furnace opening cover, is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cover 219, abutting against the lower end of the manifold 209. A rotation mechanism 267, described later, is provided below the sealing cover 219 to rotate the wafer cassette 217. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the wafer cassette 217. The rotation mechanism 267 is configured to rotate the wafer 200 about the center of its surface by rotating the wafer cassette 217. The sealing cover 219 is configured to be raised and lowered vertically by a wafer cassette lift 115, which is a lifting mechanism located outside the reaction tube 203. The wafer box lift 115 is configured as a conveying device (conveying mechanism) that moves the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219.

[0037] A baffle 219s, serving as a furnace opening cover, is provided below the manifold 209. When the sealing cover 219 is lowered and the wafer cassette 217 is removed from the processing chamber 201, the baffle 219s can airtightly seal the lower opening of the manifold 209. An O-ring 220c, serving as a sealing member, is provided on the upper surface of the baffle 219s, abutting against the lower end of the manifold 209. The opening and closing of the baffle 219s is controlled by a baffle opening and closing mechanism 115s.

[0038] The wafer cassette 217, serving as a substrate support, is configured to support multiple wafers (e.g., 25 to 200) 200 arranged horizontally and aligned with each other at their centers in a vertical direction, i.e., arranged at intervals. The wafer cassette 217 is made of heat-resistant materials such as quartz or SiC. At the bottom of the wafer cassette 217, multiple layers of heat-insulating plates 218, such as those made of heat-resistant materials like quartz or SiC, are supported.

[0039] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. By adjusting the energizing of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature within the processing chamber 201 is adjusted to achieve the desired temperature distribution. The temperature sensor 263 is disposed along the inner wall of the reaction tube 203.

[0040] like Figure 2 As shown, the controller 121, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O interface 121d. The RAM 121b, storage device 121c, and I / O interface 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121. Furthermore, an external storage device 123 can be connected to the controller 121. It should be noted that the processing device can be configured to have one control unit or multiple control units. That is, one control unit can be used to control the processing flow described later, or multiple control units can be used. Furthermore, multiple control units can be configured as a control system interconnected via a wired or wireless communication network, or the control system as a whole can control the processing flow described later. In this specification, when the term "control unit" is used, it may refer to a situation where there is one control unit, or a situation where there are multiple control units or a control system composed of multiple control units.

[0041] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. Within the storage device 121c, a control program that controls the operation of the processing device, and a process flow describing the substrate processing procedures and conditions (described later) are recorded and stored in a readable manner. The process flow functions as a program, combining various processes in the substrate processing (film deposition, etc.) described later, which are executed by the controller 121 to obtain a predetermined result. Hereinafter, the process flow, control program, etc., are collectively referred to as a program (program product). The process flow is also simply referred to as a process. When the term "program" is used in this specification, sometimes only the process flow is included, sometimes only the control program is included, or sometimes both are included. RAM 121b is configured as a storage area (working area) that temporarily holds the program, data, etc., read by the CPU 121a.

[0042] I / O interface 121d is connected to the aforementioned MFC 241a~241e, valves 243a~243e, 247a, 247d, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, wafer cell elevator 115, baffle opening and closing mechanism 115s, etc.

[0043] CPU 121a is configured to read and execute control programs from storage device 121c, and to read processes from storage device 121c based on input commands from input / output device 122. CPU 121a is configured to control, according to the read process content, the flow rate adjustment of various substances (various gases) based on MFC 241a~241e, the opening and closing of valves 243a~243e, 247a, 247d, the opening and closing of APC valve 244 and the pressure adjustment of APC valve 244 based on pressure sensor 245, the start and stop of vacuum pump 246, the temperature adjustment of heater 207 based on temperature sensor 263, the rotation and rotation speed adjustment of wafer cassette 217 based on rotation mechanism 267, the lifting of wafer cassette 217 based on wafer cassette elevator 115, and the opening and closing of baffle 219s based on baffle opening and closing mechanism 115s, etc.

[0044] The controller 121 is configured to install the aforementioned program, which is recorded and stored in the external storage device 123, onto a computer. The external storage device 123 includes, for example, a hard disk such as an HDD, an optical disk such as a CD, a USB flash drive, or a semiconductor memory such as an SSD. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to simply as recording media. In this specification, when the term "recording medium" is used, sometimes only the storage device 121c is mentioned, sometimes only the external storage device 123 is mentioned, or sometimes both are mentioned. Furthermore, the program may be provided to the computer using a communication unit such as the Internet or a dedicated line, without using the external storage device 123.

[0045] (2) Processing procedures

[0046] The aforementioned processing apparatus is used as a step in the manufacturing process (manufacturing method) of a semiconductor device, primarily employing... Figure 3 , Figure 4 An example of a method for processing a substrate (processing method), namely a film formation process for forming a film on a wafer 200 that serves as a substrate, will be described. In this method, an example of using a silicon substrate (silicon wafer) with grooves, holes, or other recesses on its surface as the wafer 200 will be described. In the following description, the operation of each part constituting the processing apparatus is controlled by the controller 121.

[0047] The processing flow of this method includes a supply process (supply step) and an exhaust process (exhaust step); the supply process (supply step) includes (a0) a step A0 of supplying a raw material gas as a processing gas into a processing chamber 201 in which a wafer 200 with a recessed surface is disposed internally; (a1) a step A1 of increasing the pressure in the processing chamber 201 simultaneously with at least a portion of step A0; (a2) a step A2 of decreasing the pressure in the processing chamber 201; and (b) a step B of supplying a dilution gas into the processing chamber 201 or increasing the flow rate of the dilution gas supplied into the processing chamber 201, and the supply process (supply step) is performed to make the pressure in the processing chamber 201 reach one or more maximum values; in the exhaust process (exhaust step), at least a portion of the time during the supply step is used to exhaust the processing chamber 201; and in the supply step, step B begins before the end of the first step A2.

[0048] Hereinafter, the supply steps including steps A0, A1, A2, and B will be referred to as the first processing step.

[0049] It should be noted that in the following examples, such as Figure 4 As shown, the case where step B begins after the pressure in the processing chamber 201 reaches its first maximum value in the supply step (first processing step) is explained.

[0050] It should be noted that in the following examples, the case of forming a film containing a specified element on a wafer 200 is described. Specifically, the case of forming a film on a wafer 200 by cycling a first processing step that is not performed simultaneously and a second processing step that supplies a reaction gas as a processing gas a specified number of times (n times, where n is an integer of 1 or 2 or more) is described.

[0051] The term "wafer" as used in this specification sometimes means the wafer itself, and sometimes means a laminate of the wafer and a specified layer or film formed on its surface. The term "surface of the wafer" as used in this specification sometimes means the surface of the wafer itself, and sometimes means the surface of a specified layer, etc., formed on the wafer. When described in this specification as "forming a specified layer on the surface of the wafer," it sometimes means forming the specified layer directly on the surface of the wafer itself, and sometimes means forming the specified layer on top of layers, etc., formed on the wafer. In this specification, the use of the term "substrate" is synonymous with the use of the term "wafer."

[0052] The term "substance" as used in this specification includes at least one of gaseous and liquid substances. Liquid substances include mist-like substances.

[0053] The term "layer" as used in this specification includes at least one of continuous layers and discontinuous layers. For example, the first layer and the second layer described later may contain continuous layers, discontinuous layers, or both.

[0054] In this specification, when describing the adsorption and reaction of raw material gases and reactant gases on the surface of wafer 200, it includes not only the adsorption and reaction of these raw material gases and reactant gases on the wafer surface in the undecomposed state, but also the adsorption and reaction of intermediates generated by their decomposition and ligand detachment on the surface of wafer 200.

[0055] (Wafer loading and wafer cassette mounting)

[0056] Multiple wafers 200 are loaded into wafer cassette 217, and the lower opening of manifold 209 is opened. Then, as... Figure 1 As shown, a wafer cassette 217 supporting multiple wafers 200 is lifted by a wafer cassette elevator 115 and moved into a processing chamber 201. In this way, wafers 200 are prepared in the processing chamber 201.

[0057] (Pressure and temperature adjustment)

[0058] After the wafer cassette is assembled, vacuum pump 246 is used to perform vacuum venting (pressure reduction venting) to bring the processing chamber 201 to the desired pressure (vacuum level). At this time, the pressure inside the processing chamber 201 is measured by pressure sensor 245, and the APC valve 244 is controlled based on this measured pressure information. Additionally, heater 207 is used to heat the wafer 200 inside the processing chamber 201 to the desired processing temperature. At this time, the energization of heater 207 is controlled based on temperature information detected by temperature sensor 263 to achieve the desired temperature distribution inside the processing chamber 201. Furthermore, the rotation mechanism 267 begins rotating the wafer 200. Venting of the processing chamber 201, heating of the wafer 200, and rotation are all performed continuously, at least until the processing of the wafer 200 is completed.

[0059] (The filling of raw material gas and dilution gas)

[0060] Then, with valve 247a closed, valve 243a is opened, allowing the raw material gas to flow into gas supply pipe 232a. The flow rate of the raw material gas is adjusted by MFC 241a and supplied to the first storage section 260a. Thus, the raw material gas is filled into the first storage section 260a at a pressure increased to the filling pressure. After a predetermined amount of raw material gas is filled into the first storage section 260a, valve 243a is closed, maintaining the state of raw material gas filling in the first storage section 260a. Meanwhile, with valve 247d closed, valve 243d is opened, allowing dilution gas to flow into gas supply pipe 232b. The flow rate of the dilution gas is adjusted by MFC 241d and supplied to the second storage section 260d. Thus, the dilution gas is filled into the second storage section 260d at a pressure increased to the filling pressure. After the second storage section 260d is filled with a predetermined amount of dilution gas, valve 243d is closed to maintain the state in which the second storage section 260d is filled with dilution gas. It should be noted that as long as the dilution gas is filled into the second storage section 260d during the supply of dilution gas, the filling of dilution gas can also be performed after the start of the first processing step.

[0061] (Film-forming treatment)

[0062] Then, the first processing step and the second processing step are performed in sequence.

[0063] [First Processing Step]

[0064] First, raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0065] Specifically, valve 247a is opened to allow the high-pressure raw material gas filling the first storage section 260a to flow into the depressurized processing chamber 201. In this disclosure, this method of supplying gas to the wafer 200 using a pressure difference is also referred to as rapid supply. At this time, valves 243c and 243e can also be opened to supply inactive gas into the processing chamber 201 via nozzles 249a and 249b. At this time, the opening degree of APC valve 244 is set to a predetermined state as needed.

[0066] The following uses Figure 4 The pressure change inside the processing chamber 201 caused by supplying raw material gas into the processing chamber 201 is explained. Figure 4 The vertical axis represents the pressure inside the treatment chamber 201, and the horizontal axis represents time. Figure 4 The solid line shown represents the pressure change within the processing chamber 201 during the first processing step. Figure 4 The dashed line shown represents the pressure change in the processing chamber 201 after time T4, when no dilution gas is supplied to the processing chamber 201 within a specified time after the start of rapid supply of raw material gas.

[0067] By opening valve 247a, the pressure in processing chamber 201, which begins to rapidly supply raw material gas, rises sharply between time T1 and time T3, reaching a maximum value V3 at time T3. The pressure in processing chamber 201, having reached its maximum value V3, then decreases between time T3 and time T8. Figure 4 As shown, the pressure inside the processing chamber 201 reaches its maximum value at time T3.

[0068] The period from time T1 to time T3 is the pressure rise period during which the pressure (here, the partial pressure of the feed gas) within the processing chamber 201 increases. If the partial pressure of the feed gas increases, it can reach not only the opening side of the recess (hereinafter also simply referred to as the opening side) but also the deep side of the recess (hereinafter also simply referred to as the deep side). This improves the step coverage. For example, when the pressure V2 at time T2 is set to half the maximum value V3, the partial pressure of the feed gas can be particularly increased during the period from time T2 to time T3 during the aforementioned pressure rise period, thus further improving the step coverage.

[0069] On the other hand, the period from time T3 to time T8 is a pressure drop period in which the pressure (in this case, the partial pressure of the feed gas) within the processing chamber 201 decreases. If the partial pressure of the feed gas becomes low, it may be difficult for the feed gas to reach the deeper side. For example, if the pressure V2 at time T7 is set to half of the maximum value V3, the partial pressure of the feed gas is high during the pressure drop period from time T3 to time T7, thus maintaining a high step coverage. In contrast, the step coverage may decrease from time T7 to time T8 because the partial pressure of the feed gas is relatively low. Moreover, if a predetermined time (e.g., time T3) elapses from the start of the rapid supply of the feed gas (time T1), the thermal decomposition of the feed gas remaining in the processing chamber 201 begins, generating highly reactive decomposition products. Compared to the deeper side, decomposition products are more easily adsorbed on the open side, so the more decomposition products are present in the processing chamber 201, the easier it is to form a thick layer (film) on the open side, and the step coverage may further decrease.

[0070] Therefore, in this method, after the rapid supply of raw material gas begins (e.g., time T0), dilution gas is supplied to the processing chamber 201 during the period from time T3 to time T8, preferably during the period from time T3 to time T7.

[0071] Specifically, valve 247d is opened to allow the high-pressure dilution gas filling the second storage section 260d to flow into the processing chamber 201. At this time, valves 243c and 243e can also be opened to supply inactive gas into the processing chamber 201 through nozzles 249a and 249b.

[0072] Diluent gas is rapidly supplied by opening valve 247d. After the rapid supply of diluent gas begins (e.g., time T4), the pressure in processing chamber 201 rises from time T5 to time T6, reaching a maximum value V4 at time T6. The pressure in processing chamber 201, having reached its maximum value V4, decreases from time T6 to time T9, at which time the pressure decrease in processing chamber 201 ends. Figure 4 As shown, the pressure inside processing chamber 201 reaches its maximum value at time T6. From the start of the rapid supply of dilution gas until the pressure drop inside processing chamber 201 ends at time T9, the raw material gas and decomposition products remaining inside processing chamber 201 continue to be discharged outside processing chamber 201. This step of discharging the raw material gas and decomposition products outside processing chamber 201 is also called the exhaust step. The process involves supplying dilution gas into processing chamber 201 as described above, versus not supplying dilution gas into processing chamber 201 (…). Figure 4 Compared to the case shown by the dotted line, it is possible to discharge the raw material gas and decomposition products remaining in the processing chamber 201 to the outside of the processing chamber 201 in a large quantity as early as possible and in a short period of time.

[0073] It should be noted that the step of supplying raw material gas into processing chamber 201 is called step A0. For example, the step of increasing the pressure in processing chamber 201 from time T1 to time T3 is called the first step A1. For example, the step of decreasing the pressure in processing chamber 201 from time T3 to time T5 is called the first step A2. The step of supplying dilution gas into processing chamber 201 is called step B. For example, the step of increasing the pressure in processing chamber 201 from time T5 to time T6 is called the second step A1. For example, the step of decreasing the pressure in processing chamber 201 from time T6 to time T9 is called the second step A2. The maximum value at time T3 is called the first maximum value, and the maximum value at time T6 is called the second maximum value. Figure 4 In this context, the implementation periods of steps A0, A1, A2, and B are represented as A0, A1, A2, and B, respectively. This is in... Figure 5 The same applies to the middle. It should be noted that steps A0 and B are initiated by sending commands from controller 121 to valves 247a and 247d to open valves 247a and 247d, respectively. In addition, the start of step B refers to the moment when the dilution gas begins to be supplied into the processing chamber 201, in other words, the moment when the dilution gas arrives in the processing chamber 201.

[0074] Under the processing conditions described later, by supplying a processing gas containing specified elements (i.e., a raw material gas containing specified elements) to the wafer 200, a first layer containing specified elements can be formed on the surface of the wafer 200. The first layer is formed by adsorbing the raw material gas and decomposition products formed by the thermal decomposition of a portion of the raw material gas on the outermost surface of the wafer 200.

[0075] After the pressure drop in processing chamber 201 is complete, valve 247d is closed to stop the supply of dilution gas to processing chamber 201. Then, the pressure in processing chamber 201 is reduced (e.g., by vacuum venting) to remove any remaining decomposition products from processing chamber 201. At this time, valves 243c and 243e are opened, and a third flow rate of inactive gas is supplied to processing chamber 201 via nozzles 249a and 249b. This prevents gas in processing chamber 201 from entering nozzles 249a and 249b. Then, while supplying a fourth flow rate of inactive gas (above the third flow rate) to processing chamber 201, venting is performed. The inactive gas supplied from nozzles 249a and 249b acts as a purging gas. Thus, the space where wafer 200 exists, i.e., processing chamber 201, is purged. This vacuum venting and / or purging step is also referred to as the venting step. Preferably, the flow rate of the inactive gas supplied during this purging is less than that of the diluent gas supplied in step B, and the supply time is shorter. Additionally, as... Figure 3As shown, the decompression and purging are preferably performed multiple times (e.g., 2 to 20 times) (cyclic purging).

[0076] When the specified element is silicon (Si), the feed gas can be a silane-based gas. For example, a gas containing both Si and a halogen, i.e., a halosilane-based gas, can be used. As the halogen, at least one element selected from chlorine (Cl), fluorine (F), bromine (Br), and iodine (I) can be used.

[0077] As the raw material gas, gases such as tetrachlorosilane (SiCl4), monochlorosilane (SiH3Cl), dichlorosilane (SiH2Cl2), and trichlorosilane (SiHCl3) can be used, provided that a single molecule does not contain bonds between Si atoms (i.e., bonds between specified elements). As the first processing gas, in addition to chlorosilane gases, gases such as tetrafluorosilane (SiF4), difluorosilane (SiH2F2), bromosilane (SiBr4), dibromosilane (SiH2Br2), tetraiodosilane (SiI4), and diiodosilane (SiH2I2) can also be used, provided that the molecular structure does not contain bonds between Si atoms (i.e., bonds between specified elements).

[0078] In addition, as raw material gases, gases containing two or more Si atoms (i.e., two or more atoms of the specified element) in their molecular structure can be used, such as hexachlorosilane (Si2Cl6), octachlorotrisilane (Si3Cl8), monochlorosilane (Si2H5Cl), dichlorosilane (Si2H4Cl2), trichlorosilane (Si2H3Cl3), tetrachlorosilane (Si2H2Cl4), monochlorotrisilane (Si3H5Cl), and dichlorotrisilane (Si3H4Cl2).

[0079] In addition, as a feedstock gas, gases containing both Si and an amino group in one molecule, namely aminosilane gases, can also be used. An amino group refers to a monovalent functional group from ammonia, primary amines, or secondary amines, having had hydrogen (H) removed, and can be represented as -NH2, -NHR, or -NR2. It should be noted that R represents an alkyl group, and the two Rs in -NR2 can be the same or different.

[0080] As raw material gases, for example, tetra(dimethylamino)silane (Si[N(CH3)2]4) gas, tri(dimethylamino)silane (Si[N(CH3)2]3H) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2) gas, bis(tert-butylamino)silane (SiH2[NH(C4H9)]2) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2]) gas, etc., aminosilane gases can also be used.

[0081] One or more of them can be used as raw material gases.

[0082] Inert gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used as inert gases. More than one of these can be used as an inert gas. This also applies to the steps described later.

[0083] As a diluent gas, for example, the same gas as the inert gas described above can be used. More than one of them can be used as a diluent gas.

[0084] [Second Processing Step]

[0085] Subsequently, a reaction gas is supplied to the wafer 200 in the processing chamber 201 as a processing gas.

[0086] Specifically, valve 243b is opened, allowing the reactive gas to flow into gas supply pipe 232b. The reactive gas flow rate is adjusted by MFC 241b and supplied into processing chamber 201 via nozzle 249b, and exhausted from exhaust port 231a. At this time, reactive gas is supplied to wafer 200 (reactive gas supply). Alternatively, valves 243c and 243e can be opened to supply inactive gas into processing chamber 201 via nozzles 249a and 249b.

[0087] By supplying a reactive gas to the wafer 200 under the processing conditions described later, at least a portion of the first layer formed on the wafer 200 reacts with the reactive gas and is modified. As a result, a second layer, which is a modified layer of the first layer, is formed on the wafer 200.

[0088] For example, oxidizing gases can be used as reacting gases. Oxidizing gases can include, for example, gases containing oxygen (O) and hydrogen (H). Examples of gases containing O and H include water vapor (H₂O), hydrogen peroxide (H₂O₂), hydrogen (H₂) + oxygen (O₂), and H₂ + ozone (O₃). In addition to gases containing O and H, gases containing oxygen (O) can also be used as oxidizing gases. Examples of gases containing oxygen include O₂, O₃, nitrous oxide (N₂O), nitric oxide (NO), nitrogen dioxide (NO₂), carbon monoxide (CO), and carbon dioxide (CO₂). It should be noted that gases containing both O and H are also considered gases containing oxygen. More than one of these can be used as oxidizing gases. It should be noted that in this specification, the phrase "H₂ + O₂" refers to a mixture of H₂ and O₂ gases. When supplying a mixed gas, the two gases can be mixed (premixed) in the supply pipe before being supplied to the processing chamber 201, or the two gases can be supplied to the processing chamber 201 separately from different supply pipes and mixed (postmixed) in the processing chamber 201.

[0089] After the second layer is formed on the surface of wafer 200, valve 243b is closed to stop the supply of reactive gas to the processing chamber 201. Then, a vacuum is applied to the processing chamber 201 to remove any remaining decomposition products. At this time, valves 243c and 243e are opened, and inactive gas is supplied to the processing chamber 201 via nozzles 249a and 249b. The inactive gas supplied from nozzles 249a and 249b acts as a purging gas, thereby purging the processing chamber 201.

[0090] [Number of times stipulated for implementation]

[0091] By sequentially performing the first and second processing steps described above a predetermined number of times (n times, where n is an integer of 1 or 2 or more) without simultaneous processing, a film can be formed on the surface of wafer 200. For example, when the feed gas contains Si and the reactant gas is an oxidizing gas, a silicon oxide film (SiO film) can be formed on the surface of wafer 200. The above cycle is preferably repeated multiple times. That is, it is preferable that the thickness of the second layer formed in each cycle is thinner than the desired film thickness, and the above cycle is repeated multiple times until the thickness of the film formed by stacking the second layer reaches the desired thickness.

[0092] The following examples illustrate the processing conditions when gas is supplied in the first and second processing steps.

[0093] Examples of processing conditions for supplying the raw material gas in the first processing step are as follows:

[0094] Processing temperature: 250~800℃, preferably 600~700℃.

[0095] Processing pressure: 1~2666 Pa, preferably 1~1333 Pa.

[0096] Raw material gas supply flow rate: 1~500 slm, preferably 10~200 slm.

[0097] Raw material gas supply time: 0.01~5 seconds, preferably 0.5~5 seconds.

[0098] Partial pressure of the feed gas: 0.00005~3999 Pa, preferably 0.06~1333 Pa.

[0099] Inactive gas supply flow rate (for each gas supply pipe: second flow rate): 0~5slm.

[0100] Here, the inactive gas supply flow rate (second flow rate) is preferably less than or equal to the first flow rate, which is the dilution gas supply flow rate described later.

[0101] It should be noted that the processing temperature in this specification refers to the temperature of wafer 200 or the temperature inside processing chamber 201, and the processing pressure refers to the pressure inside processing chamber 201. Furthermore, processing time refers to the duration of the processing. Additionally, when the supply flow rate includes 0 slm, 0 slm means that the substance (gas) is not supplied. These same principles apply in the following descriptions.

[0102] Examples of processing conditions for supplying dilution gas in the first processing step are as follows:

[0103] Diluent gas supply flow rate (first flow rate): 10~500 slm, preferably 10~300 slm.

[0104] Diluent gas supply time: 0.5~10 seconds, preferably 0.5~5 seconds.

[0105] Partial pressure of dilution gas: 0.00005~2999 Pa, preferably 0.06~1333 Pa.

[0106] Other conditions can be set to the same processing conditions as when the raw material gas is supplied.

[0107] Examples of processing conditions for depressurizing (or vacuuming) the processing chamber 201 during the exhaust process are as follows:

[0108] Inactive gas supply flow rate (third flow rate): 0~5 slm.

[0109] Inactive gas supply time: 0.5~10 seconds.

[0110] The processing temperature can be set to the same processing conditions as when the raw material gas is supplied.

[0111] Examples of treatment conditions for purging the treatment chamber 201 during the exhaust process are as follows:

[0112] Inactive gas supply flow rate (fourth flow rate): 10~300 slm.

[0113] Inactive gas supply time: 0.5~10 seconds.

[0114] The processing temperature can be set to the same processing conditions as when the raw material gas is supplied. Here, it is preferable that at least one of the following is true: the purging time is shorter than that in step B, and the fourth flow rate is less than the supply flow rate of the diluent gas in step B (the first flow rate).

[0115] Examples of processing conditions for supplying the reactant gas in the second processing step are as follows:

[0116] The reaction gas supply flow rate is 1~10 slm, preferably 1~5 slm.

[0117] The reaction gas supply time is 1 to 120 seconds, preferably 1 to 60 seconds.

[0118] Other conditions can be set to the same processing conditions as when the raw material gas is supplied.

[0119] (Post-purge and atmospheric pressure recovery)

[0120] After forming a film of the desired thickness on wafer 200, an inert gas is supplied as a purge gas into processing chamber 201 through nozzles 249a and 249b, and exhaust is performed through exhaust port 231a. This purges processing chamber 201, removing residual gases and decomposition products. The atmosphere within processing chamber 201 is then replaced with the inert gas, and the pressure within processing chamber 201 is restored to atmospheric pressure.

[0121] (Wafer box unloading and wafer release)

[0122] Next, the sealing cover 219 is lowered using the wafer cassette lifter 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported by the wafer cassette 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203. After being moved to the outside of the reaction tube 203, the processed wafer 200 is removed from the wafer cassette 217.

[0123] (3) The effect of this method

[0124] According to this method, one or more of the following effects can be obtained.

[0125] (a) By performing step A1, which increases the pressure within the processing chamber 201, simultaneously with at least a portion of step A0, the partial pressure of the feed gas within the processing chamber 201 can be increased. Therefore, the amount of feed gas molecules reaching the deep side can be increased. Consequently, the thickness difference between the film formed on the opening side and the deep side can be reduced, thus improving the step coverage of the film formed in the recess.

[0126] Furthermore, by starting step B before the end of the first step A2, the raw material gas is less likely to remain (residual) in the processing chamber 201 for an extended period, and the mole fraction (or partial pressure) of the decomposition products in the processing chamber 201 can be reduced. This suppresses the adsorption of localized decomposition products on the opening side, thereby improving the step coverage of the membrane formed in the recess.

[0127] (b) By starting step B after the pressure inside the processing chamber 201 reaches its first maximum value, the partial pressure of the feed gas can be sufficiently increased. After the feed gas can easily reach the deep side, the feed gas and decomposition products are discharged outside the processing chamber 201. As a result, the step coverage of the membrane formed in the recess can be further improved.

[0128] (c) After step B begins, step B is performed to maximize the pressure inside the processing chamber 201. That is, in step B, by supplying a large flow rate of dilution gas into the processing chamber 201, the raw material gas and decomposition products are easily discharged further outside the processing chamber 201. As a result, the step coverage of the membrane formed in the recess can be further improved.

[0129] (d) By starting step B during a period when the pressure inside the processing chamber 201 is more than half of the maximum value V3 of the pressure inside the processing chamber 201 during the supply step, it is possible to ensure a period of high partial pressure of the feed gas, and to discharge the feed gas outside the processing chamber 201 before thermal decomposition of the feed gas. This further improves the step coverage of the membrane formed in the recess.

[0130] (e) Step B is terminated after the pressure drop in the processing chamber 201 has ended; that is, step B continues until the pressure drop in the processing chamber 201 has ended. This facilitates the further discharge of the raw material gas and decomposition products remaining in the processing chamber 201 to the outside of the processing chamber 201. As a result, the step coverage can be reliably improved.

[0131] (f) During at least a portion of the supply step, by supplying the raw material gas pre-stored in the first storage section 260a into the processing chamber 201, the partial pressure of the raw material gas in the processing chamber 201 can be easily increased further. As a result, the above-mentioned effects can be reliably obtained.

[0132] (g) During at least a portion of step B, a large quantity of dilution gas is readily supplied to the processing chamber 201 by supplying dilution gas pre-stored in the second storage section 260d. This allows for precise control of the timing of the dilution gas supply initiation. Furthermore, it facilitates shorter residence times for the raw material gas and decomposition products.

[0133] (h) When the feeding step is carried out under conditions of thermal decomposition of the feed gas in the processing chamber 201, the increase in the residence (residual) time of the feed gas has a significant impact on the step coverage due to the increase in decomposition products. Even under such conditions, the above-mentioned effects can be obtained according to this disclosure.

[0134] (i) When using a feed gas containing atoms of two or more specified elements in its molecular structure, the increase in decomposition products has a significant impact on the step coverage as the residence time of the feed gas increases. Even in such cases, the above-mentioned effects can be obtained according to this disclosure.

[0135] (j) In the supply step, at least a portion of step B is provided with a first flow rate of dilution gas into the processing chamber 201, and no dilution gas is provided into the processing chamber 201 before the start of step B, thereby achieving the above-mentioned effect.

[0136] (k) In at least a portion of step B, a dilution gas at a first flow rate is supplied to the processing chamber 201. Prior to the start of step B, no dilution gas is supplied to the processing chamber 201, or a processing gas at a second flow rate not below the first flow rate is supplied to the processing chamber 201. Under such circumstances, the above-described effects can also be obtained.

[0137] (l) By controlling the controller 121 to open the valve 247d after opening the valve 247a, step B can begin after the start of step A0 and before the end of step A2. Thus, the above-mentioned effect can be obtained.

[0138] (m) By performing an exhaust step (i.e., depressurization and purging within the processing chamber 201) after step B, the pressure within the processing chamber 201 can be increased or decreased. This facilitates the further discharge of raw material gases and decomposition products from the surface of the wafer 200 and within the processing chamber 201 to the outside of the processing chamber 201.

[0139] (n) In step B, compared to the purging step, a large amount of raw material gas and decomposition products are present on the surface of wafer 200 and in processing chamber 201. Therefore, it is preferable that at least one of the following is true: the purging time in the purging step is shorter than that in step B, and the fourth flow rate is less than the supply flow rate (first flow rate) of the dilution gas in step B. This makes it easier to remove raw material gas and decomposition products in step B, and reduces the amount of inactive gas consumed in the purging process of the purging step and the processing time required for wafer 200.

[0140] (4) Variations

[0141] The film-forming process in this method can be modified as shown in the following variations. These variations can be combined arbitrarily. Unless otherwise specified, the processing procedures and conditions in each step of each variation can be the same as those in each step of the film-forming process described above.

[0142] In this variation, step B can also begin before the pressure in the processing chamber 201 reaches its first maximum value. Hereinafter, using... Figure 5 Please provide a detailed explanation.

[0143] Figure 5 The vertical axis represents the pressure inside the treatment chamber 201, and the horizontal axis represents time. Figure 5 The solid line shown represents the pressure change in the processing chamber 201 during the first processing step in the modified example. Figure 5 The dashed line shown represents the pressure change in the processing chamber 201 after time t3, when no dilution gas is supplied to the processing chamber 201 within a specified time after the rapid supply of raw material gas begins.

[0144] In the first processing step, without the supply of dilution gas, the pressure in processing chamber 201, which is rapidly supplied with raw material gas, rises abruptly from time t1 to time t4, reaching a maximum value v3 at time t4. After reaching maximum value v3, the pressure in processing chamber 201 decreases from time t4 to time t6. The pressure v2 at time t2 represents half of the maximum value v3. Following the rapid supply of raw material gas, with dilution gas supplied at time t3, the pressure in processing chamber 201 rises between time t3 and time t5, reaching a maximum value v4 at time t5. After reaching maximum value v4, the pressure in processing chamber 201 decreases from time t5 to time t7, and the pressure decrease ends at time t7. Figure 5 As shown, the pressure inside the processing chamber 201 reaches its first maximum value at time t5.

[0145] It should be noted that, for example, the step of increasing the pressure in the processing chamber 201 from time t1 to time t5 is called the first step A1. For example, the step of decreasing the pressure in the processing chamber 201 during the period from time t5 to time t7 is called the first step A2.

[0146] In this variation, at least some of the effects of the above method can also be obtained.

[0147] In this variation, such as Figure 5 As shown, step B is preferably started during a period when the pressure inside the processing chamber 201 is more than half of the maximum pressure v3 inside the processing chamber 201 (for example, during the period from time t2 to time t4). This allows the raw material gas and decomposition products to be discharged outside the processing chamber 201 after the raw material gas has sufficiently reached the deep side.

[0148] In this variation, such as Figure 5 As shown, step B is preferably started after the first step A1. This allows for a certain increase in the partial pressure of the feed gas, ensuring it reaches the deeper portion before discharging the feed gas and decomposition products out of the processing chamber 201. This also improves the step coverage of the membrane formed in the recess.

[0149] In the above-described manner, the gas supplied to the processing chamber 201 before the dilution gas supply begins is the feed gas. Therefore, before the dilution gas supply begins, the pressure (total pressure) inside the processing chamber 201 is considered to be substantially equal to the partial pressure of the feed gas. Thus, in this modified example, the supply of dilution gas begins before the partial pressure of the feed gas inside the processing chamber 201 reaches its peak value. In contrast, if the supply of dilution gas begins after the partial pressure of the feed gas inside the processing chamber 201 has reached its peak value, the feed gas and decomposition products can be easily discharged outside the processing chamber 201 after the feed gas can easily reach the deeper side. Therefore, the step coverage of the membrane formed in the recess can be further improved.

[0150] <Other methods of this disclosure>

[0151] The above details the manner in which this disclosure is made. However, this disclosure is not limited to the manner described above, and various modifications can be made without departing from its spirit.

[0152] In the above description, an example of rapidly supplying the raw material gas and dilution gas in steps A0 and B has been given. However, this disclosure is not limited to this. For example, in each step of A0 and B, the raw material gas and dilution gas may not be pre-filled into the first storage unit 260a and the second storage unit 260d respectively, and may be supplied to the processing chamber 201 (non-rapid supply). In this case, one of the first storage unit 260a and valves 243a and 247a may be omitted from the raw material gas supply system. Similarly, one of the second storage unit 260d and valves 243d and 247d may be omitted from the dilution gas supply system. In this method, at least some of the effects of the above method can also be obtained.

[0153] In the above description, an example of supplying dilution gas into the processing chamber 201 in step B has been given. However, this disclosure is not limited to this. For example, in step B, the flow rate of the dilution gas supplied into the processing chamber 201 can also be increased. In this method, it is also possible to prevent the raw material gas from remaining (residual) in the processing chamber 201 for a long time, and to reduce the mole fraction (or partial pressure) of the decomposition products in the processing chamber 201, thereby achieving the same effect as the method described above.

[0154] In the above description, an example of a film-forming process in which a film containing a specified element is formed on wafer 200 is given, i.e., the process gas is the gas used to form the film on wafer 200. However, this disclosure is not limited thereto. For example, the process gas may be a gas other than the gas used to form the film on wafer 200.

[0155] In the above description, Si was used as an example of a specified element. However, this disclosure is not limited to this. For example, the specified element may be a metallic element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), germanium (Ge), or nitrogen (N) and oxygen (O).

[0156] In the above description, an oxidizing gas was used as an example of the reactant gas. However, this disclosure is not limited to this. For example, reducing gases including hydrogen (H2), deuterium (D2), borane (BH3), diborane (B2H6), carbon monoxide (CO), ammonia (NH3), silane (SiH4), disilane (Si2H6), trisilane (Si3H8), monogermanane (GeH4), digermanane (Ge2H6), etc., and nitriding gases including ammonia (NH3), diazeline (N2H2), hydrazine (N2H4), N3H8, etc., can also be used as the reactant gas.

[0157] In the above description, an example has been given where the first storage unit 260a and the valves 243a and 247a, respectively located upstream and downstream of it, are positioned upstream of the confluence of the gas supply pipes 232a and 232c. However, this disclosure is not limited to this. For example, the first storage unit 260a and the valves 243a and 247a can also be positioned downstream of the confluence of the gas supply pipes 232a and 232c. The same applies to the second storage unit 260d and the valves 243d and 247d, respectively located upstream and downstream of it.

[0158] In the above description, an example of using an inactive gas (i.e., a gas that does not exhibit reactivity within the processing chamber 201) as a diluent gas has been illustrated. However, this disclosure is not limited to this. The diluent gas can be any gas that reduces the concentration of the processing gas within the processing chamber 201 by being supplied to it simultaneously with the processing gas; that is, it can be a gas that is not a processing gas. The diluent gas can also be a chemically reactive gas, such as a gas that oxidizes or reduces the surface of the wafer 200, the components within the processing chamber 201, or other gases. In this case, since both the processing gas and the diluent gas are present simultaneously within the processing chamber 201 during the first processing step, it is preferable to use a gas that does not react with the processing gas in the gas phase as the diluent gas. It should be noted that inactive gases are often less expensive than chemically reactive gases; therefore, using an inactive gas as a diluent gas can reduce processing costs.

[0159] In the above description, an example of rapidly supplying diluent gas into the processing chamber 201 has been illustrated. However, this disclosure is not limited to this. For example, the inactive gas supplied from the inactive gas supply system may be further included in the diluent gas. In this case, gas supply pipes 232c, 232e, MFC 241c, 241e, and valves 243c, 243e may be further included in the diluent gas supply system. Thus, when diluent gas is supplied from multiple paths, the total flow rate of diluent gas supplied from each path may be used as the flow rate of diluent gas supplied in step B. Furthermore, during purging within the processing chamber 201, diluent gas may be further supplied into the processing chamber 201, allowing the diluent gas to function as a purging gas.

[0160] The processes used in each process are preferably prepared individually according to the processing content, and recorded and stored in the storage device 121c via a telecommunication line and external storage device 123. Furthermore, when starting each process, the CPU 121a preferably selects an appropriate process from the multiple processes recorded and stored in the storage device 121c according to the processing content. This allows for various processes with good membrane reproducibility for different membrane types, composition ratios, membrane qualities, and membrane thicknesses within the processing apparatus. Additionally, it reduces the operator's workload, avoids operational errors, and allows for rapid initiation of each process.

[0161] The aforementioned process is not limited to new manufacturing; for example, it can also be prepared by modifying an existing process already installed in the processing device. In the case of process modification, the modified process can be installed in the processing device via a telecommunication line and a recording medium containing that process. Alternatively, the existing process already installed in the processing device can be directly modified by operating the input / output device 122 of the existing processing device.

[0162] In the above-described method, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been explained. This disclosure is not limited to the above-described method; for example, it can also be appropriately applied when forming a film using a monolithic substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the above-described method, an example of forming a film using a substrate processing apparatus with a hot-wall type furnace has been explained. This disclosure is not limited to the above-described method; it can also be appropriately applied when forming a film using a substrate processing apparatus with a cold-wall type furnace.

[0163] When using these processing devices, each process can be performed under the same processing procedures and conditions as described above and in the modified examples, and the same effects as described above and in the modified examples can be obtained.

[0164] The above methods and variations can be used in appropriate combinations. The processing procedures and conditions can be set to be the same as those in the above methods and variations.

Claims

1. A substrate processing method, comprising a feeding step and an exhaust step; The supply process includes: (a0) A process of supplying processing gas into a processing chamber containing a substrate having recesses on its surface. The process of simultaneously increasing the pressure in the processing chamber by at least a portion of (a1) and (a0), (a2) The process of reducing the pressure inside the processing chamber, and (b) The step of supplying dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied into the processing chamber. Furthermore, the supply process is performed to bring the pressure in the processing chamber to one or more maximum values; In the exhaust process, exhaust is performed on at least a portion of the supply process in the processing chamber; In the supply process, (b) begins before the end of the first (a2).

2. The substrate processing method according to claim 1, wherein, In the supply process, it begins after the pressure in the processing chamber reaches its first maximum value (b).

3. The substrate processing method according to claim 1 or 2, wherein, Perform (b) such that the pressure in the processing chamber reaches the maximum value after (b) begins.

4. The substrate processing method according to claim 1, wherein, In the supply process, it begins before the pressure in the processing chamber reaches the first maximum value (b).

5. The substrate processing method according to any one of claims 1 to 4, wherein, (b) begins during a period when the pressure in the processing chamber is more than half of the maximum pressure in the processing chamber during the supply process.

6. The substrate processing method according to any one of claims 1 to 5, wherein, Begin (b) after the first (a1).

7. The substrate processing method according to any one of claims 1 to 6, wherein, During at least a portion of the supply process, the processing gas, which is pre-stored in the first storage section, is supplied to the processing chamber.

8. The substrate processing method according to any one of claims 1 to 7, wherein, During at least a portion of (b), the dilution gas, which is pre-stored in the second storage section, is supplied to the processing chamber.

9. The substrate processing method according to any one of claims 1 to 8, wherein, The supply process is carried out under the condition that the processing gas undergoes thermal decomposition in the processing chamber.

10. The substrate processing method according to any one of claims 1 to 9, wherein, It also includes a film-forming process, which comprises the feeding process and forming a film containing specified elements on the substrate. The processing gas is a gas whose molecular structure contains atoms of the specified elements.

11. The substrate processing method according to claim 10, wherein, The processing gas is a gas whose molecular structure contains atoms of two or more of the specified elements.

12. The substrate processing method according to any one of claims 1 to 11, wherein, In at least a portion of (b), the diluent gas is supplied to the processing chamber at a first flow rate. Before (b) begins, the dilution gas is not supplied to the processing chamber, or a purge gas at a second flow rate below the first flow rate is supplied to the processing chamber.

13. The substrate processing method according to any one of claims 1 to 12, wherein, The control unit sends a command to the first valve to open the first valve, thereby initiating (a0). The first valve is located in the flow path connecting the supply source of the processing gas to the processing chamber. The control unit sends a command to the second valve to open the second valve, thereby initiating (b), the second valve being located in the flow path connecting the supply source of the dilution gas to the processing chamber. The first valve and the second valve are controlled by the control unit to open the second valve after the first valve is opened.

14. The substrate processing method according to any one of claims 1 to 13, wherein, In the supply process, in at least a portion of (b), a first flow rate of the diluent gas is supplied to the processing chamber. Furthermore, after (b) ends, there is a process that performs the cycle including (c1) and (c2) more than once. (c1) A step of not supplying purge gas to the processing chamber, or supplying purge gas at a third flow rate below the first flow rate to the processing chamber while simultaneously reducing the pressure in the processing chamber. (c2) A process of supplying the purge gas at a fourth flow rate of the third flow rate or higher into the processing chamber, and simultaneously venting the processing chamber.

15. The substrate processing method according to claim 14, wherein, Make at least one of the following true: perform (c1) in a shorter time than (b), and make the fourth flow rate less than the first flow rate.

16. A method for manufacturing a semiconductor device, comprising a feeding step and an exhaust step; The supply process includes: (a0) A process of supplying processing gas into a processing chamber in which a substrate is disposed. The process of simultaneously increasing the pressure in the processing chamber by at least a portion of (a1) and (a0), (a2) The process of reducing the pressure inside the processing chamber, and (b) The step of supplying dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied into the processing chamber. Furthermore, the supply process is performed to bring the pressure in the processing chamber to one or more maximum values; In the exhaust process, exhaust is performed on at least a portion of the supply process in the processing chamber; In the supply process, (b) begins before the end of the first (a2).

17. A substrate processing apparatus comprising: The processing chamber contains a substrate with recesses on its surface. The supply system is configured to supply processing gas and dilution gas into the processing chamber. An exhaust system, configured to connect the processing chamber to an exhaust device and be able to control the exhaust gas from the processing chamber, and The control unit is configured to control the supply system and the exhaust system such that: The process includes supplying and venting gas, wherein the supplying process includes (a0) supplying processing gas into the processing chamber, (a1) and (a0) simultaneously increasing the pressure in the processing chamber, (a2) decreasing the pressure in the processing chamber, and (b) supplying dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied to the processing chamber, wherein the supplying process is performed to make the pressure in the processing chamber reach one or more maximum values, and in the venting process, at least a portion of the supplying process is vented from the processing chamber, and in the supplying process, (b) begins before the end of the first (a2).

18. A program product that uses a computer to cause a substrate processing apparatus to perform a supply process and an exhaust process. The supply process includes (a0) supplying a processing gas into a processing chamber containing a substrate with recesses on its surface; (a1) and (a0) simultaneously increasing the pressure within the processing chamber in at least a portion of the process; (a2) decreasing the pressure within the processing chamber; and (b) supplying a dilution gas into the processing chamber or increasing the flow rate of the dilution gas supplied to the processing chamber, wherein the supply process is performed to cause the pressure within the processing chamber to reach one or more maximum values. During the exhaust process, exhaust is performed on the processing chamber during at least a portion of the supply process.

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