Electro-optical modulation memristor device with double-layer cavity coupling structure and preparation method and application thereof

By using an electro-optic modulated memristor with a dual-cavity coupling structure, combined with the oxidation-reduction and migration of the active metal layer driven by an electric field, the problem that traditional memristors cannot also function as optical modulators is solved. This achieves high-contrast, high-speed response optical modulation and integrated storage and display, reduces system power consumption and latency, and supports high-density integration and miniaturization.

CN122121547APending Publication Date: 2026-05-29SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Filing Date
2026-02-11
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Traditional memristors are only used as electronic storage elements and cannot be used as optical modulators or display devices. Single-layer FP cavities are not sensitive to small changes in the thickness of the metal layer, resulting in poor optical modulation effects. Traditional electrochromic response speed is slow and the device structure has poor stability. The separate integration of storage and display panels leads to high power consumption and difficulties in miniaturization.

Method used

An electro-optic modulated memristor device employing a dual-cavity coupling structure achieves non-volatile resistive state switching and optical modulation by driving the oxidation-reduction and migration of the active metal layer with an electric field. The optical coupling effect of the dual-cavity structure amplifies the optical response caused by the change in metal layer thickness. Combined with the all-solid-state oxide and the electric field-driven high-speed ion migration mechanism, high-speed response and high-contrast optical modulation are achieved.

Benefits of technology

It achieves the integration of electrical storage and optical display in a single device, improves optical modulation sensitivity and contrast, has a response speed of nanosecond to microsecond and excellent stability, reduces system power consumption and latency, and supports high-density integration and miniaturization design.

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Abstract

The application discloses an electro-optical modulation memristor device with a double-layer cavity coupling structure and a preparation method and application thereof. The electro-optical modulation memristor device comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially stacked, the second metal layer is an active metal layer, and one of the first metal layer and the third metal layer is an inert metal layer; the first metal layer, the first dielectric layer and the second metal layer are simultaneously configured to form a first Fabry-Perot cavity structure and a first electrochemical metallization memristor structure, and the second metal layer, the second dielectric layer and the third metal layer are simultaneously configured to form a second Fabry-Perot cavity structure and a second electrochemical metallization memristor structure; the electro-optical modulation memristor device realizes non-volatile resistance state switching and optical modulation simultaneously by driving the oxidation and reduction and migration of active metal ions in the second metal layer through an electric field. The application greatly improves the sensitivity and contrast of optical modulation.
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