Detection device

Abstract

The present application provides a detection device which expands a pressure-sensitive range while avoiding a decrease in sensitivity. The detection device has an array substrate and a sensor layer opposed to the array substrate. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes provided on the first surface. The detection electrodes have a first detection portion and a second detection portion disposed at a position closer to the sensor layer than the first detection portion.

Description

Technical Field

[0001] This invention relates to a detection device. Background Technology

[0002] The detection device is used to detect loads (pressures) acting perpendicularly on a detection surface. The detection device has a common electrode, a detection electrode, and a sensor layer connected to both the common electrode and the detection electrode. The sensor layer in the following patent document has, for example, a main body formed of rubber and multiple conductive particles dispersed within the main body. When pressure is applied to the sensor layer, the main body is crushed, and the conductive particles come into contact with each other. As a result, the resistance of the sensor layer decreases, and current flows through the sensor layer from the common electrode to the detection electrode.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-146489 Summary of the Invention

[0006] However, it is desirable for the detection device to expand the range of pressure values ​​it can detect (hereinafter referred to as the pressure sensitivity range). Increasing the resistance of the sensor layer expands the pressure sensitivity range, but decreases the output value of the detection electrode, leading to reduced sensitivity. Therefore, it is desirable to develop a detection device that expands the pressure sensitivity range while avoiding a decrease in sensitivity.

[0007] The purpose of this invention is to provide a detection device that expands the pressure sensitivity range while avoiding a decrease in sensitivity.

[0008] One embodiment of the detection apparatus disclosed herein includes an array substrate and a sensor layer opposite to the array substrate. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes disposed on the first surface. Each detection electrode has a first detection portion and a second detection portion disposed closer to the sensor layer than the first detection portion. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the detection device of Embodiment 1 viewed from the front.

[0010] Figure 2 This is a schematic cross-sectional view of the detection device according to Embodiment 1; more specifically, it schematically shows a cross-section of the detection device according to Embodiment 1. Figure 3 A sectional view of the section cut along line II-II.

[0011] Figure 3 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate of Embodiment 1 as viewed from the sensor layer side.

[0012] Figure 4 It is Figure 2 A magnified view of the vicinity of the detection electrode of the first contact hole.

[0013] Figure 5 This is a circuit diagram showing the circuit configuration of the detection device according to Embodiment 1.

[0014] Figure 6 This is a cross-sectional view schematically showing the state of pressure input in the detection device of Embodiment 1.

[0015] Figure 7 This is an illustration showing that the input is greater than... Figure 6 A cross-sectional view of the pressure state.

[0016] Figure 8 This is an illustration showing that the input is greater than... Figure 7 A cross-sectional view of the pressure state.

[0017] Figure 9 This is an illustration showing that the input is greater than... Figure 8 A cross-sectional view of the pressure state.

[0018] Figure 10 This is a cross-sectional view of the detection device of Comparative Example 1 cut along the stacking direction.

[0019] Figure 11 It is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection devices of Embodiment 1, Comparative Example 1 and Comparative Example 2.

[0020] Figure 12 This is a cross-sectional view of the detection device of deformation example 1 cut along the stacking direction.

[0021] Figure 13 This is a cross-sectional view of the detection device for deformation example 2, cut along the stacking direction. More specifically... Figure 14 Sectional view along line XIII-XIII.

[0022] Figure 14 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate of Modified Example 2 as observed from the sensor layer.

[0023] Figure 15 This is a cross-sectional view of the detection device of deformation example 3, cut along the stacking direction. More specifically... Figure 16 XV-XV line sectional view.

[0024] Figure 16 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate of Modified Example 3 as observed from the sensor layer.

[0025] Figure 17 This is a cross-sectional view of the detection device for deformation example 4, cut along the stacking direction. More specifically... Figure 17 Sectional view along line XVII-XVII.

[0026] Figure 18 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate of Modified Example 4, viewed from the sensor layer.

[0027] The reference numerals in the attached figures are explained as follows:

[0028] 1 detection surface

[0029] 3 detection areas

[0030] 4 Surrounding Areas

[0031] 5 independent detection areas

[0032] 10-array substrate

[0033] 11 substrates

[0034] 12 array layers

[0035] Page 1 of 16

[0036] 20, 20A, 120D detection electrodes

[0037] 21 Planar section

[0038] 22 Longitudinal Wall Section

[0039] 23 First Plane Section

[0040] 24 Second Plane Section

[0041] 25 Third Plane

[0042] 26 First longitudinal wall section

[0043] 27 Second longitudinal wall section

[0044] 28 Third longitudinal wall section

[0045] 29, 129 First contact part

[0046] 30 common electrodes

[0047] 60 cross sections

[0048] 61 longitudinal section

[0049] 70 sensor layers

[0050] 80 protective layers

[0051] 90 convex part

[0052] 91 concavity

[0053] 92 1st convex part

[0054] 93 2nd convex part

[0055] Detection devices for 100, 100A, 100B, 100C, and 100D

[0056] 121 Planar Section

[0057] 122 protrusion

[0058] Top of 123, 126

[0059] 125 protrusion

[0060] 131 First Plane

[0061] 132 Second Plane

[0062] 133 Third Plane

[0063] 134 Fourth Plane Detailed Implementation

[0064] The embodiments of the detection apparatus used to implement this disclosure are described in detail with reference to the accompanying drawings. The invention disclosed herein is not limited to the embodiments described below. Furthermore, the constituent elements described below include those readily conceived or substantially identical to those skilled in the art. Moreover, the constituent elements described below can be appropriately combined. It should be noted that this disclosure is merely an example, and appropriate modifications that can be readily conceived by those skilled in the art in maintaining the spirit of the invention are naturally included within the scope of this invention. To make the description clearer, the width, thickness, shape, etc., of various parts of the drawings are sometimes schematically shown compared to the actual form, but this is merely an example and not a limitation on the interpretation of the invention. Additionally, in this specification and the drawings, the same reference numerals are sometimes used for constituent elements that are previously described with respect to existing drawings, and detailed descriptions are appropriately omitted.

[0065] Furthermore, in this specification and claims, when referring to the arrangement of other structures on top of a certain structure, the term "on top" includes, unless otherwise specified, both the case of arranging other structures directly above a certain structure in connection with it and the case of arranging other structures above a certain structure with one other structure in between.

[0066] (Implementation Method 1)

[0067] Figure 1 This is a schematic diagram showing the detection device of Embodiment 1 from the front. The detection device 100 is a device for detecting the pressure acting on the detection surface 1. Figure 1As shown, the detection device 100 is formed in the shape of a flat plate. The detection device 100 has a planar surface (detection surface 1) and a planar back surface 2 (in the detection area). Figure 1 Not illustrated. See also Figure 2 The detection device 100 appears rectangular when viewed from the normal direction of the detection surface 1. Figure 1 The detection device 100 shown has a planar detection surface 1, thus enabling it to detect the pressure distribution within the detection surface 1.

[0068] The detection surface 1 is divided into a detection area 3, which can detect pressure, and a peripheral area 4, which cannot detect pressure. The detection area 3 is located in the center of the detection surface 1. The peripheral area 4 is formed in a frame shape, surrounding the outer side of the detection area 3.

[0069] The detection area 3 is rectangular when viewed from the normal direction of the detection surface 1. Therefore, the outer frame M of the detection area 3 has a pair of short sides 3a and a pair of long sides 3b. The direction parallel to the detection surface 1 and parallel to the short sides 3a will be referred to as the first direction X. The direction parallel to the detection surface 1 and parallel to the long sides 3b will be referred to as the second direction Y. Thus, the second direction Y is orthogonal (intersecting) with the first direction X. Furthermore, the direction parallel to the detection surface 1 will sometimes be referred to as the planar direction.

[0070] The detection area 3 is divided into multiple independent detection areas 5. In other words, the detection area 3 is composed of multiple independent detection areas 5. Furthermore, pressure values ​​are detected in each independent detection area 5. Viewed from the normal direction of the detection surface 1, each independent detection area 5 is square. The multiple independent detection areas 5 are arranged along the first direction X and the second direction Y.

[0071] Figure 2 This is a schematic cross-sectional view of the detection device according to Embodiment 1; more specifically, it schematically shows a cross-section of the detection device according to Embodiment 1. Figure 3 A sectional view of the section cut along line II-II. (e.g.) Figure 2 As shown, the detection device 100 includes an array substrate 10, a sensor layer 70, and a protective layer 80 that are stacked sequentially. Hereinafter, the direction in which the array substrate 10, sensor layer 70, and protective layer 80 overlap is referred to as the stacking direction. It should be noted that the normal direction of the aforementioned detection surface 1 is the same as the stacking direction. Furthermore, the direction in the stacking direction from which the sensor layer 70 is arranged as viewed from the array substrate 10 is referred to as the first stacking direction Z1, and the opposite direction is referred to as the second stacking direction Z2. Viewing from the first stacking direction Z1 is referred to as top view.

[0072] The array substrate 10 includes a substrate 11 and an array layer 12 formed on the substrate 11 in a first stacking direction Z1. The substrate 11 has a plate-like structure that supports the array layer 12 and is insulating. Examples of substrates 11 include flexible substrates made of polyimide, but this disclosure is not limited thereto. In addition, the surface of the substrate 11 in the second stacking direction Z2 constitutes the back surface 2 of the detection device 100.

[0073] The array layer 12 has a first insulating layer 13, a second insulating layer 14, and a third insulating layer 15 sequentially stacked on the surface of the substrate 11 in the first stacking direction Z1. It should be noted that a gate insulating film 42 of the transistor 40, which will be described later, is provided between the first insulating layer 13 and the second insulating layer 14.

[0074] The first insulating layer 13, the second insulating layer 14, and the third insulating layer 15 are formed of insulating material. The insulating material can be either inorganic or organic. Furthermore, the third insulating layer 15 is a layer (planarization film) used to planarize the first surface 16 of the array layer 12 in the first stacking direction Z1. It should be noted that the array layer 12 of this embodiment has three insulating layers, but this disclosure does not impose any particular limitation on the number of insulating layers.

[0075] A detection electrode 20, a common electrode 30, a first contact hole 6, and a second contact hole 7 are formed on the first surface 16 of the array layer 12.

[0076] Figure 3 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate in Embodiment 1, viewed from the sensor layer side. It should be noted that... Figure 3 In order to facilitate observation of the detection electrode 20 and the common electrode 30, dot patterns are marked on the detection electrode 20 and the common electrode 30. The detection electrode 20 and the common electrode 30 are metal films (metal layers) formed on the first surface 16 by a metal material such as ITO (Indium Tin Oxide).

[0077] like Figure 3 As shown, one detection electrode 20 is configured for each independent detection region 5. That is, multiple detection electrodes 20 are formed on the first surface 16. The detection electrodes 20 are positioned in the center of the independent detection regions 5. When viewed from above, the detection electrodes 20 appear to be square in shape.

[0078] like Figure 3As shown, one common electrode 30 is configured for each independent detection region 5. That is, multiple common electrodes 30 are formed on the first surface 16. The common electrode 30 is formed into a four-sided frame shape when viewed from above. Furthermore, a detection electrode 20 is disposed inside the common electrode 30, and the common electrode 30 surrounds the detection electrode 20. In addition, the common electrode 30 and the detection electrode 20 are separated and not connected in the planar direction on the first surface 16.

[0079] like Figure 2 As shown, the first contact hole 6 and the second contact hole 7 are holes extending from the first surface 16 of the array substrate 10 towards the second stacking direction Z2. A connection wiring 49 (described later) is disposed on the first contact hole 6 in the second stacking direction Z2. A reference potential wiring 48 (described later) is disposed on the second contact hole 7 in the second stacking direction Z2. One first contact hole 6 and one second contact hole 7 are each formed for an independent detection region 5.

[0080] like Figure 3 As shown, the first contact hole 6 is located in the center of the independent detection area 5. The second contact hole 7 is located on the first surface 16 at the portion overlapping with the common electrode 30. Thus, as Figure 2 As shown, a portion of the detection electrode 20 is disposed within the first contact hole 6, forming a first contact portion 29 connected to the connection wiring 49. Additionally, a portion of the common electrode 30 is disposed within the second contact hole 7, forming a second contact portion 39 connected to the reference potential wiring 48.

[0081] like Figure 2 As shown, the cross-sectional shape of the inner peripheral surface of the first contact hole 6, cut along the stacking direction, is stepped. Therefore, the cross-sectional shape of the detection electrode 20 stacked on the inner peripheral surface of the first contact hole 6 is also stepped. Details are explained below.

[0082] Figure 4 It is Figure 2 A magnified view of the first contact hole and the vicinity of the detection electrode. (See image below.) Figure 4 As shown, the inner peripheral surface of the first contact hole 6 has two transverse surfaces 60 extending in the planar direction and three longitudinal surfaces 61 extending in the stacking direction. The two transverse surfaces 60 are a first transverse surface 62 and a second transverse surface 63 arranged sequentially from the second stacking direction Z2. The three longitudinal surfaces 61 are a first longitudinal surface 64, a second longitudinal surface 65, and a third longitudinal surface 66 arranged sequentially from the second stacking direction Z2. The first longitudinal surface 64 extends from the first transverse surface 62 along the second stacking direction Z2. The second longitudinal surface 65 connects the first transverse surface 62 and the second transverse surface 63. The third longitudinal surface 66 connects the second transverse surface 63 and the first surface 16.

[0083] The detection electrode 20 has a first contact portion 29, three planar portions 21 extending in a planar direction, and three longitudinal wall portions 22 extending in a stacking direction. The three planar portions 21 are a first planar portion 23 stacked on a first transverse surface 62, a second planar portion 24 stacked on a second transverse surface 63, and a third planar portion 25 stacked on a first surface 16. It should be noted that in the specification, the first planar portion 23 is sometimes referred to as the first detection portion. In addition, the second planar portion 24 is sometimes referred to as the second detection portion.

[0084] The three longitudinal wall portions 22 are a first longitudinal wall portion 26 extending along the first longitudinal plane 64, a second longitudinal wall portion 27 extending along the second longitudinal plane 65, and a third longitudinal wall portion 28 extending along the third longitudinal plane 66. The first longitudinal wall portion 26 connects the first contact portion 29 and the first planar portion 23. The second longitudinal wall portion 27 connects the first planar portion 23 and the second planar portion 24. The third longitudinal wall portion 28 connects the second planar portion 24 and the third planar portion 25.

[0085] like Figure 3 As shown, the first planar portion 23, the second planar portion 24, the third planar portion 25, the first longitudinal wall portion 26, the second longitudinal wall portion 27, and the third longitudinal wall portion 28, when viewed from above, each form a four-sided border (ring-shaped). That is, the first transverse surface 62, the second transverse surface 63, the first longitudinal wall portion 26, the second longitudinal wall portion 27, and the third longitudinal wall portion 28 of the first contact hole 6 also form a four-sided border (ring-shaped) when viewed from above. Therefore, the detection electrode 20 gradually moves towards the second stacking direction Z2 as it approaches the center.

[0086] Figure 5 This is a circuit diagram showing the circuit configuration of the detection device in Embodiment 1. Figure 5 As shown, transistors 40, gate lines 46, signal lines 47, reference potential wiring 48, and connection portions 50 are formed inside the array layer 12. Figure 1 ), Gate line drive circuit 51 (see Figure 1 ), Signal line selection circuit 52 (see Figure 1 ) and public cabling 53 (see Figure 1 In addition, multiple transistors 40, gate lines 46, signal lines 47 and reference potential wiring 48 are formed in the array layer 12 (array substrate 10).

[0087] Transistor 40 is a switching element. Multiple transistors 40 are configured, one for each independent detection region 5. For example... Figure 2 As shown, transistor 40 includes a semiconductor layer 41, a gate insulating film 42, a gate electrode 43, a drain electrode 44, and a source electrode 45. Furthermore, the end of the source electrode 45 in the first stacking direction Z1 is connected to a connection wiring 49. The connection wiring 49 extends along the planar direction (see...). Figure 3The source electrode 45 is connected to the first contact portion 29. Thus, the source electrode 45 is connected to the detection electrode 20 via the connecting wire 49 and the first contact portion 29.

[0088] like Figure 5 As shown, gate line 46 extends along the first direction X. Multiple gate lines 46 are arranged in the second direction Y. Figure 3 As shown, the gate line 46 has a branch 46a extending along the second direction Y. The branch 46a is disposed in each independent detection region 5. The gate line 46 connects via the branch 46a to the gate electrodes 43 of the plurality of transistors 40 arranged in the first direction X (see...). Figure 2 )connect.

[0089] like Figure 5 As shown, signal line 47 extends along the second direction Y. Furthermore, multiple signal lines 47 are arranged in the first direction X. And, the signal lines 47 connect with the drain electrodes 44 of the multiple transistors 40 arranged in the second direction Y (see...). Figure 2 )connect.

[0090] like Figure 5 As shown, the reference potential wiring 48 extends along the second direction Y. Multiple reference potential wirings 48 are arranged along the first direction X. Furthermore, as... Figure 2 As shown, the reference potential wiring 48 is connected to the second contact portion 39 of the common electrode 30.

[0091] like Figure 1 As shown, the connection portion 50, gate line driving circuit 51, signal line selection circuit 52, and common wiring 53 are disposed in the peripheral region 4 of the array layer 12. The connection portion 50 is used to connect to a driver IC (Integrated Circuit) disposed outside the detection device 100. It should be noted that the driver IC can also be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid substrate connected to the connection portion 50. Alternatively, the driver IC can also be mounted as a COG (Chip On Glass) on the peripheral region 4 of the array substrate 10.

[0092] Gate line drive circuit 51 drives multiple gate lines 46 (see [link]) based on various control signals from the driver IC. Figure 5 The circuit consists of a gate line drive circuit 51 that sequentially or simultaneously selects multiple gate lines 46 and supplies gate drive signals to the selected gate lines 46.

[0093] Signal line selection circuit 52 selects multiple signal lines 47 sequentially or simultaneously (see...). Figure 5The switching circuit 52 is, for example, a multiplexer. The signal line selection circuit 52 connects the selected signal line 47 to the driver IC based on a selection signal supplied from the driver IC. The detection area includes a transistor 40, a gate line 46, a signal line 47, and a reference potential wiring 48; therefore, the detection device 100 can measure the change in pressure distribution within the surface over time.

[0094] The common wiring 53 is connected to the driver IC via the connection portion 50, and a fixed amount of current is supplied from the driver IC. The common wiring 53 extends in a ring shape along the peripheral area. Furthermore, the common wiring 53 is connected to the reference potential wiring 48. Thus, a fixed amount of current is supplied to the common electrode 30.

[0095] like Figure 2 As shown, the sensor layer 70 includes a deformable, insulating main body 71 made of silicone rubber or the like, and conductive particles 72 dispersed within the main body 71. The sensor layer 70 has a high resistance when no pressure is applied. However, when pressure is applied to the sensor layer 70, causing the main body 71 to deform, the conductive particles 72 come into contact with or approach it, and the resistance of the sensor layer 70 decreases. Furthermore, the surface 73 of the sensor layer 70 in the second stacking direction Z2 contacts the third planar portion 25 of the detection electrode and the common electrode 30.

[0096] The protective layer 80 is formed of a material that is elastically deformable and has insulating properties, such as rubber or resin. The surface of the protective layer 80 in the first stacking direction Z1 becomes the detection surface 1. In addition, the integrated sensor layer 70 and the protective layer 80 are bonded to the array substrate 10 by means of a frame-shaped frame portion (not shown) in the area overlapping with the surrounding region 4.

[0097] Next, the operation of the detection device 100 will be explained. For example... Figure 2 As shown, when no pressure is applied to the detection surface 1, the resistance of the sensor layer 70 is high. Therefore, current will not flow from the common electrode 30 to the sensor layer 70.

[0098] On the other hand, when pressure is applied to the detection surface 1, a compressive load in the stacking direction acts on the sensor layer 70, causing the resistance of the sensor layer 70 to decrease. As a result, current flows through the sensor layer 70 from the common electrode 30 to the detection electrode 20 (see...). Figure 6 (See arrow A1). Furthermore, if the pressure input to the detection surface 1 increases, the decrease in resistance of the sensor layer 70 increases. That is, the amount of current flowing from the common electrode 30 into the detection electrode 20 increases. Thus, the amount of current flowing into the detection electrode 20 is directly proportional to the magnitude of the input pressure.

[0099] Then, the electrical signal (current value) input to the detection electrode 20 is output to the driver IC through the signal line 47. The driver IC determines the load input to the independent detection area 5 based on the magnitude of the current value.

[0100] Furthermore, the amount of current flowing from the common electrode 30 to the detection electrode 20 via the sensor layer 70 varies not only due to changes in the resistance of the sensor layer 70 itself, but also due to changes in the contact area between the sensor layer 70 and the detection electrode 20. Specifically, if the contact area between the sensor layer 70 and the detection electrode 20 increases, the amount of current flowing into the detection electrode 20 increases. In this embodiment, the contact area between the sensor layer 70 and the detection electrode 20 changes in the following manner corresponding to changes in pressure.

[0101] Figure 6 This is a schematic cross-sectional view showing the state of pressure input in the detection device of Embodiment 1. Figure 7 This is an illustration showing that the input is greater than... Figure 6 A cross-sectional view of the pressure state. Figure 8 This is an illustration showing that the input is greater than... Figure 7 A cross-sectional view of the pressure state. Figure 9 This is an illustration showing that the input is greater than... Figure 8 A cross-sectional view of the pressure state.

[0102] like Figure 6 As shown, when the pressure F1 input to the detection surface 1 is relatively small, the sensor layer 70 only contacts the third planar portion 25 of the detection electrode 20. Furthermore, when the pressure F2 input to the detection surface 1 is greater than the pressure F1 (F2 > F1), as... Figure 7 As shown, the sensor layer 70 moves in the second stacking direction Z2 and contacts the second planar portion 24. That is, the sensor layer 70 contacts both the third planar portion 25 and the second planar portion 24 in the detection electrode 20, increasing the contact area. Therefore, the amount of current flowing into the detection electrode 20 (see...) Figure 7 Arrow A2) is higher than the input pressure F1 (see arrow A2). Figure 6 Arrow A1) is large.

[0103] like Figure 8 As shown, when a pressure F3 greater than the pressure F2 is input to the detection surface 1 (F3 > F2), the sensor layer 70 moves further in the second stacking direction Z2 and contacts the first planar portion 23. That is, the sensor layer 70 contacts the third planar portion 25, the second planar portion 24, and the first planar portion 23 in the detection electrode 20, increasing the contact area. Therefore, the amount of current flowing into the detection electrode 20 (see...) Figure 8 Arrow A3) is higher than the input pressure F2 (see arrow A3). Figure 7 Arrow A2) is large.

[0104] like Figure 9 As shown, when a pressure F4 greater than the pressure F3 is input to the detection surface 1 (F4 > F3), the sensor layer 70 moves further in the second stacking direction Z2 and contacts the first contact portion 29. That is, the sensor layer 70 contacts the third planar portion 25, the second planar portion 24, the first planar portion 23, and the first contact portion 29, increasing the contact area. Therefore, the amount of current flowing into the detection electrode 20 (see...) Figure 9 Arrow A4) is less than the input pressure F3 (see arrow A4). Figure 8 Arrow A3) is large.

[0105] As described above, in this embodiment, if the pressure increases, the contact area between the sensor layer 70 and the detection electrode 20 increases, and the amount of current flowing into the detection electrode 20 also increases.

[0106] Figure 10 This is a cross-sectional view of the detection device of Comparative Example 1 cut along the stacking direction. Figure 11 This is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection devices of Embodiment 1, Comparative Example 1, and Comparative Example 2. Next, the effects of the detection device 100 of Embodiment 1 will be explained. First, the detection devices of Comparative Example 1 and Comparative Example 2 will be described.

[0107] like Figure 10 As shown, the detection device 1000 of Comparative Example 1 differs from that of Embodiment 1 in that the detection electrode 1020 extends along the first surface 1016 of the array substrate 1010. That is, in the detection device 1000 of Comparative Example 1, even if the pressure input to the detection surface increases, the contact area between the detection electrode 1020 and the sensor layer 1070 remains unchanged. Furthermore, the resistivity of the sensor layer 1070 is the same as that of the sensor layer 70 in Embodiment 1.

[0108] Although not specifically illustrated, the detection device of Comparative Example 2 has the same structure as that of Comparative Example 1. However, in the detection device of Comparative Example 2, the resistivity of the sensor layer is higher than that of the sensor layer 1070 of Comparative Example 1 and the sensor layer 70 of Embodiment 1.

[0109] like Figure 11As shown, in the detection device 1000 of Comparative Example 1, the resistance value of the sensor layer 1070 decreases proportionally to the magnitude of the input pressure. Consequently, the current flowing into the detection electrode 1020 increases. Furthermore, in Comparative Example 1, the contact area between the sensor layer 1070 and the detection electrode 1020 does not increase or decrease even if the magnitude of the input pressure increases or decreases. In other words, because the contact area between the sensor layer 1070 and the detection electrode 1020 is large, even with a small pressure, the current flowing into the detection electrode 1020 increases. Moreover, in the detection device 1000 of Comparative Example 1, the maximum output value C1 (the maximum current flowing into the detection electrode 1020) is achieved when the input pressure is B1. Therefore, the pressure-sensitive range (the range of pressure that can be detected) of the detection device 1000 is from 0 (zero) to B1.

[0110] On the other hand, according to the detection device of Comparative Example 2, the resistivity of the sensor layer is high, so even with an input pressure B1, the output value (the amount of current flowing into the detection electrode) will not be at its maximum. Therefore, the detection device of Comparative Example 2 can detect pressures greater than B1. Furthermore, the detection device of Comparative Example 2 achieves its maximum output value (the amount of current flowing into the detection electrode is at its maximum) at a pressure value B2 greater than B1. Therefore, the pressure-sensitive range of the detection device of Comparative Example 2 is from pressure 0 (zero) to B2. However, due to the high resistivity of the sensor layer, the output value of the detection device of Comparative Example 2 is small. In other words, the maximum output value C2 of the detection device of Comparative Example 2 is less than the maximum output value C1 of the detection device 1000 of Comparative Example 1, resulting in reduced sensitivity.

[0111] On the other hand, according to the detection device 100 of Embodiment 1, if the pressure input to the detection surface 1 does not increase, the contact area between the sensor layer 70 and the detection electrode 20 will not increase. That is, the amount of current flowing into the detection electrode 20 can be suppressed to a small extent. Therefore, in the detection device 100 of Embodiment 1, even if the input pressure B1 is less, the amount of current flowing into the detection electrode 20 is less than that of Comparative Example 1. As a result, the pressure-sensitive range of the detection device 100 of Embodiment 1 is from pressure 0 (zero) to B2, which is greater than that of Comparative Example 1. In addition, the resistivity of the sensor layer 70 of Embodiment 1 is the same as that of the sensor layer 1070 of Comparative Example 1. As a result, the maximum output value (the amount of current flowing into the detection electrode 20 is the maximum) is C1, which is the same as that of Comparative Example 1. That is, according to Embodiment 1, the decrease in sensitivity as in Comparative Example 2 can be avoided.

[0112] As described above, the detection device 100 according to Embodiment 1 can avoid a decrease in sensitivity and achieve an expansion of the pressure-sensitive range.

[0113] The first embodiment has been described above. Next, a modified example in which a portion of the detection electrode of the first embodiment is deformed will be described. Furthermore, the following description will focus on the differences from the first embodiment.

[0114] (Variation Example 1)

[0115] Figure 12 This is a cross-sectional view of the detection device in modified example 1, cut along the stacking direction. For example... Figure 12 As shown, the detection electrode 20A of the detection device 100A in Modified Example 1 differs from that in Embodiment 1 in that it does not have the third planar portion 25 and the third longitudinal wall portion 28. Therefore, the sensor layer 70 and the detection electrode 20A do not contact each other when no pressure is applied. Consequently, noise is less likely to be input to the detection electrode 20A. Furthermore, the power consumption of the detection device 100A can be suppressed.

[0116] Next, a modified example in which not only the detection electrode is changed but also the shape of the first surface is described.

[0117] (Variation Example 2)

[0118] Figure 13 This is a cross-sectional view of the detection device of Modified Example 2, cut along the stacking direction. Specifically, it is... Figure 14 Sectional view along line XIII-XIII. Figure 14 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate in Modified Example 2, viewed from the sensor layer side. Figure 13 As shown, the difference between Modified Example 2 and Embodiment 1 is that the first contact hole 6 on the first surface 16 of the array substrate 10 extends linearly along the stacking direction. Therefore, the inner surface of the first contact hole 6 becomes only one longitudinal surface 61 extending along the stacking direction. Furthermore, the difference from Embodiment 1 is that a hemispherical protrusion 90 protruding in the first stacking direction Z1 is formed on the first surface 16 of the array substrate 10. The cross-section of the protrusion 90 along the stacking direction is semi-circular.

[0119] The detection electrode 120B is stacked on the first surface 16, the first contact hole 6, and the protrusion 90. Thus, the portion of the detection electrode 120B stacked on the first surface 16 forms a planar portion 121 extending in the planar direction. Furthermore, the portion of the detection electrode 120B stacked on the first contact hole 6 constitutes a longitudinal wall portion 124 and a first contact portion 129. The portion of the detection electrode 120B stacked on the protrusion 90 forms a hemispherical protrusion 122. The cross-sectional shape of the protrusion 122 cut along the stacking direction is semi-circular. The portion of the protrusion 122 furthest along the first stacking direction Z1 forms the top 123.

[0120] like Figure 14As shown, four protrusions 122 (protrusions 90) are provided. Furthermore, the four protrusions 122 (protrusions 90) are arranged symmetrically about the first contact hole 6, rotating four times (four-fold symmetry). The top 123 of the protrusion 122 contacts the sensor layer 70. It should be noted that in the specification, the flat portion 121 is sometimes referred to as the first detection portion. Additionally, the top 123 of the protrusion 122 is sometimes referred to as the second detection portion.

[0121] As described above, according to Modification 2, under low pressure, the sensor layer 70 only contacts the top 123 of the protrusion 122. If the pressure increases, the sensor layer 70 contacts the portion of the protrusion 122 that is further in the second stacking direction Z2 than the top 123. If the pressure input to the detection surface further increases, the sensor layer 70 contacts the planar portion 121.

[0122] As described above, according to the detection device 100B of Modified Example 2, if the pressure input to the detection surface 1 does not increase, the contact area between the sensor layer 70 and the detection electrode 120 will not increase. Therefore, the amount of current flowing to the detection electrode 120B can be suppressed to a small extent, and the pressure-sensitive range can be expanded. Furthermore, a decrease in sensitivity can be avoided.

[0123] (Variation Example 3)

[0124] Figure 15 This is a cross-sectional view of the detection device in modified example 3, cut along the stacking direction. Specifically, it is... Figure 16 XV-XV line sectional view. Figure 16 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate in Modified Example 3, viewed from the sensor layer side. Figure 15 As shown, the difference from Modified Example 2 is that a recess 91 is formed on the array substrate 10 of the detection device 100C in Modified Example 3 instead of a protrusion 90. The recess 91 is a hemispherical depression, and the cross-section cut along the stacking direction is semi-circular.

[0125] The detection electrode 120C is stacked on the first surface 16, the first contact hole 6, and the recess 91. Thus, the portion of the detection electrode 120C stacked on the first surface 16 forms a planar portion 121 extending in the planar direction. Furthermore, the portion of the detection electrode 120C stacked on the first contact hole 6 constitutes a longitudinal wall portion 124 and a first contact portion 129. The portion of the detection electrode 120C stacked on the recess 91 forms a protrusion 125 with a semi-circular cross-section cut along the stacking direction. The protrusion 125 protrudes in the second stacking direction Z2, in other words, in the direction opposite to the direction in which the sensor layer 70 is disposed, compared to the planar portion 121. Furthermore, the portion of the protrusion 125 furthest in the second stacking direction Z2 forms a top 126.

[0126] like Figure 16 As shown, there are four protrusions 125 (recesses 91). The flat portion 121 contacts the sensor layer 70. It should be noted that in the specification, the top 126 of the protrusion 125 is sometimes referred to as the first detection portion. In addition, the flat portion 121 is sometimes referred to as the second detection portion.

[0127] As described above, according to Modification 3, under low pressure, the sensor layer 70 only contacts the planar portion 121. If the pressure increases, the sensor layer 70 contacts the protrusion 125 (except for the top 126). If the pressure increases further, the sensor layer 70 contacts the top 126 of the protrusion 125.

[0128] As described above, according to the detection device 100C of Modified Example 3, if the pressure input to the detection surface 1 does not increase, the contact area between the sensor layer 70 and the detection electrode 120C will not increase. Therefore, the amount of current flowing to the detection electrode 120C can be suppressed to a small extent, and the pressure-sensitive range can be expanded. Furthermore, a decrease in sensitivity can be avoided.

[0129] (Variation Example 4)

[0130] Figure 17 This is a cross-sectional view of the detection device in modified example 4, cut along the stacking direction. Specifically, it is... Figure 17 Sectional view along line XVII-XVII. Figure 18 This is an enlarged view of a portion (an independent detection area) of the first surface of the array substrate in Modified Example 4, viewed from the sensor layer side. Figure 17 As shown, the detection device 100D in Modified Example 4 differs from that in Embodiment 1 in that it has a first protrusion 92 and a second protrusion 93 protruding from the first surface 16 toward the first stacking direction Z1. Furthermore, unlike Embodiment 1, the first contact hole 6 on the first surface 16 of the array substrate 10 extends linearly along the stacking direction.

[0131] The cross-sectional shape of the first protrusion 92 and the second protrusion 93 is quadrilateral. The first protrusion 92 has a first convex surface 92a facing the first stacking direction Z1 and parallel to the planar direction. The second protrusion 93 has a second convex surface 93a facing the first stacking direction Z1 and parallel to the planar direction.

[0132] like Figure 18As shown, the first protrusion 92 and the second protrusion 93 appear as a four-sided frame (ring) when viewed from above. It should be noted that the first protrusion 92 is disposed on the inner circumferential side of the second protrusion 93. Therefore, a portion of the first surface 16 (hereinafter referred to as the first transverse wall portion 16a) is disposed between the first contact hole 6 and the first protrusion 92. A portion of the first surface 16 (hereinafter referred to as the second transverse wall portion 16b) is also disposed between the first protrusion 92 and the second protrusion 93. The first transverse wall portion 16a and the second transverse wall portion 16b appear as a four-sided frame (ring) when viewed from above.

[0133] The detection electrode 120D is stacked on the first contact hole 6, the first transverse wall portion 16a, the first protrusion 92, the second transverse wall portion 16b, and the second protrusion 93. The portion of the detection electrode 120D stacked on the first transverse wall portion 16a forms a first planar portion 131 extending in the planar direction. The portion of the detection electrode 120D stacked on the first protrusion 92a forms a second planar portion 132 extending in the planar direction. The portion of the detection electrode 120D stacked on the second transverse wall portion 16b forms a third planar portion 133 extending in the planar direction. The portion of the detection electrode 120D stacked on the second protrusion 93a forms a fourth planar portion 134 extending in the planar direction.

[0134] like Figure 18 As shown, viewed from the stacking direction, the first planar portion 131, the second planar portion 132, the third planar portion 133, and the fourth planar portion 134 form a four-sided frame (ring) centered on the central portion of the detection electrode 120D. Viewed from above, the second planar portion 132 is positioned between the first planar portion 131 and the third planar portion 133. The third planar portion 133 is positioned between the second planar portion 132 and the fourth planar portion 134. Figure 17 As shown, the first planar portion 131 and the third planar portion 133 are positioned identically in the stacking direction. The second planar portion 132 and the fourth planar portion 134 are positioned identically in the stacking direction. The second planar portion 132 and the fourth planar portion 134 are disposed on the first stacking direction Z1 compared to the first planar portion 131 and the third planar portion 133. Furthermore, the second planar portion 132 and the fourth planar portion 134 are in contact with the sensor layer 70.

[0135] As described above, according to Modification 4, when the pressure input to the detection surface 1 is small, the sensor layer 70 only contacts the second planar portion 132 and the fourth planar portion 134. If the pressure input to the detection surface 1 increases, the sensor layer 70 also contacts the first planar portion 131 and the third planar portion 133.

[0136] As described above, according to the detection device 100D of Modified Example 4, if the pressure input to the detection surface 1 does not increase, the contact area between the sensor layer 70 and the detection electrode 120D will not increase. Therefore, the amount of current flowing to the detection electrode 120D can be suppressed to a small extent, and the pressure-sensitive range can be expanded. Furthermore, a decrease in sensitivity can be avoided.

Claims

1. A detection device, characterized in that, have: Array substrate; and The sensor layer opposite to the array substrate. The array substrate has: The first surface facing the sensor layer; and Multiple detection electrodes are disposed on the first surface. The detection electrode has: First Inspection Department; and A second detection unit is positioned closer to the sensor layer than the first detection unit.

2. The detection device according to claim 1, characterized in that, The direction in which the array substrate and the sensor layer are configured is set as the stacking direction. The detection electrode has: A plurality of planar portions extending along a planar direction parallel to the first surface; as well as The longitudinal wall portion extending along the stacking direction. The plurality of planar portions include a first planar portion and a second planar portion that are positioned differently from each other in the stacking direction. The longitudinal wall portion connects the first planar portion and the second planar portion. The cross-section of the detection electrode along the stacking direction is stepped. The first detection unit is the first planar unit. The second detection unit is the second planar unit.

3. The detection device according to claim 2, characterized in that, Viewed from the stacking direction, the first planar portion, the second planar portion, and the longitudinal wall portion form a ring with the central portion of the detection electrode as the center.

4. The detection device according to claim 1, characterized in that, The direction in which the array substrate and the sensor layer are configured is set as the stacking direction. The detection electrode has: A planar portion extending along a plane direction parallel to the first surface; and A plurality of protrusions protruding from the planar portion in the stacking direction The cross-section of the protrusion along the stacking direction is semi-circular. The first detection unit is the planar unit. The second detection section is the top of the protrusion.

5. The detection device according to claim 4, characterized in that, The protrusion protrudes toward the sensor layer.

6. The detection device according to claim 4, characterized in that, The protrusion protrudes in the opposite direction to the direction in which the sensor layer is disposed.

7. The detection device according to claim 1, characterized in that, The direction in which the array substrate and the sensor layer are configured is set as the stacking direction. The detection electrode has a plurality of planar portions extending along a planar direction parallel to the first surface. The plurality of planar portions include: First planar section; The second planar portion is positioned differently from the first planar portion in the stacking direction; and The third planar portion is positioned the same as the first planar portion in the stacking direction. The second planar portion is disposed between the first planar portion and the third planar portion. The first detection unit is the first planar unit. The second detection unit is the second planar unit.

8. The detection device according to claim 7, characterized in that, Viewed from the stacking direction, the first planar portion, the second planar portion, and the third planar portion form a ring with the central portion of the detection electrode as the center.

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