Semiconductor memory device and method of operating the same

By introducing temperature measurement and counting management mechanisms into semiconductor memory devices, the impact of temperature changes and read counts on memory reliability is addressed, thereby improving data read success rate and storage stability.

CN122157735APending Publication Date: 2026-06-05SK HYNIX INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SK HYNIX INC
Filing Date
2025-08-07
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

Existing semiconductor memory devices have shortcomings in operational reliability, especially in managing temperature variations and the number of read operations, leading to data read failures and storage degradation.

Method used

By introducing temperature measurement circuitry into the semiconductor memory device to measure the temperature during programming and read operations, read count increments and retention limit times are adjusted based on temperature differences, and read operations and data retention times are optimized using a block read counter and retention characteristic determiner.

Benefits of technology

This improves the operational reliability of semiconductor memory devices, reduces read failures, extends data retention time, and enhances the overall performance of the memory.

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Abstract

A semiconductor memory device and a method of operating a semiconductor memory device are provided. The semiconductor memory device includes an array of memory cells including a plurality of memory blocks, a peripheral circuit performing a program operation or a read operation on a selected memory block among the plurality of memory blocks, a temperature measuring circuit performing a temperature measuring operation to measure a first temperature during the program operation and a second temperature during the read operation, and a block read counter deriving a read count increment of the selected memory block based on the first temperature and the second temperature, and updating a read count value of the selected memory block based on the read count value of the selected memory block and the derived read count increment.
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