Nanotube transistor structure with auxiliary anode and driving method
By setting an auxiliary anode in the nano-vacuum channel transistor and applying different voltages, the direction of electron movement is changed, which solves the problem that electrons cannot be collected after passing the anode, improves the electron collection rate and device output current, and enhances the stability and efficiency of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SOUTHEAST UNIV
- Filing Date
- 2026-03-25
- Publication Date
- 2026-06-05
Smart Images
Figure CN122158420A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of vacuum micro / nano structures and field emission devices, and relates to a nanochannel transistor with an auxiliary anode and its driving method, which are developed to improve the working efficiency of the device. Background Technology
[0002] Nanochannel transistors (VCTs) are vacuum nanoelectronic devices that achieve their function by modulating and transporting field emission electrons from a cathode material. In VCTs, charge carriers transport within a vacuum channel, which minimizes the probability of scattering or collisions as they move through the channel, reducing energy loss. Furthermore, VCTs possess the characteristics of vacuum devices, offering significant advantages over solid-state devices in terms of high power, high stability, and radiation resistance. They enable the miniaturization, weight reduction, and integration of vacuum devices, holding immense potential in fields such as communications and radar.
[0003] As a fundamental device, the nanotube vacuum channel transistor can be applied to high-frequency, high-speed, high-power switching, RF amplifiers, and other applications. Its basic structure can be described as a transistor (such as a cathode, gate, and anode) fabricated on an insulating substrate. Figure 1 (As shown). The cathode uses either a metallic or semiconductor material with field emission characteristics. It needs to be fabricated with a pointed shape to improve the field enhancement factor on the cathode surface. Low work function metals or semiconductor materials with negative electron affinity are preferred to enhance cathode electron emission at the same gate voltage. Using nanomaterials such as carbon nanotubes, graphene, molybdenum disulfide, tungsten disulfide, and zinc oxide nanowires to fabricate cathodes instead of metal cathodes, while utilizing the tips and edges of the nanomaterials themselves to enhance the field enhancement factor, is a commonly used technique in field emission research in recent years. The gate, as the electrode that regulates the electron emission from the cathode, requires a bias voltage to control the electron emission. When used as a radio frequency (RF) device, the gate can simultaneously superimpose an RF modulation signal onto the bias voltage, modulating the electron beam emitted from the cathode with a high-frequency signal. The electron beam modulated by the gate moves towards the anode through a vacuum channel under the influence of the anode voltage, striking the anode to form an anode current. The modulated electron beam is then demodulated to form an amplified anode signal used by the system. However, due to the uncertainty of the direction of electrons during their movement from the cathode to the anode, and the acceleration of electrons by the electric field formed by the grid and anode voltages during their movement, some electrons may cross the anode to move to a more distant end or be received by other electrodes or media, thus failing to form an anode current that can be utilized by the system, thereby reducing the electron utilization efficiency.
[0004] To improve electron utilization efficiency at the anode, the gate structure can be adjusted to reduce electron interception, and electrodes can be fabricated between the gate and the anode to alter the direction of electron movement through the vacuum channel, allowing more electrons to hit the anode. However, to increase the device's operating frequency, the distance between the cathode and anode should be minimized, making it difficult to fabricate electrodes in a small area. Furthermore, these electrodes do not completely solve the problem of electrons flying across the anode; some electrons will still pass over the anode unused by the system.
[0005] Therefore, how to make electrons from the anode also be utilized, and further improve the utilization efficiency of electrons emitted from the cathode and the total output current of the device, has become a technical problem that urgently needs to be solved in this field. Summary of the Invention
[0006] Technical issues:
[0007] This invention addresses the technical problem in existing nanochannel transistors where electrons emitted from the cathode move towards the anode after being modulated by the gate. Some electrons, due to the influence of the electric field distribution between the electrodes, cross the anode and cannot be collected by the anode to form an anode current, thus limiting the utilization efficiency of cathode-emitted electrons and the output current of the device. The invention provides a nanochannel transistor structure with an auxiliary anode and a driving method.
[0008] Technical Solution: A traditional nano-vacuum channel transistor (VSTTT) structure includes an insulating substrate, a cathode, a gate, and an anode, all fabricated on the insulating substrate. The cathode typically uses a metal or semiconductor material with field emission characteristics. A pointed shape is required to improve the field enhancement factor at the cathode surface. Low work function materials or semiconductor materials with negative electron affinity are preferred to enhance cathode electron emission at the same gate voltage, generating electrons through field emission at a lower operating voltage. By applying a bias voltage to the gate, the electric field at the cathode surface can be changed, controlling the emission intensity of cathode electrons. Changes in the gate voltage can turn the device on or off, and modulate the cathode emission current. Applying a voltage higher than that to the anode and the cathode and gate attracts electrons emitted from the cathode that have been modulated by the gate, thus forming an anode current. When the VSTTT is used as a radio frequency (RF) device, an RF modulation signal can be superimposed on the bias voltage at the gate, modulating the electron beam emitted from the cathode. The electron beam modulated by the grid moves towards the anode through the vacuum channel under the action of the anode voltage and hits the anode to form an anode current. The modulated electron beam is demodulated to form an amplified anode signal that is used by the system.
[0009] Taking a planar double-gate nano-vacuum channel transistor as an example (e.g.) Figure 1(As shown). When a DC bias voltage is applied to the gate and a high-frequency modulated signal is superimposed, and a fixed voltage is applied to the anode, the cathode will be excited by the electric field between the cathode and gate electrodes, causing electrons to move towards the gate and anode. This depends on the direction of the electric field between the device electrodes (e.g., ...). Figure 2 As shown in the diagram, the electric field force experienced by electrons emitted from above the cathode is obliquely upward, thus giving them an initial velocity with a vertical upper component. Even with a downward electric field force between the grid and the anode, not all upward-moving electrons can be drawn to the anode. Consequently, some electrons, after being modulated by the grid, cross the anode, and some electrons emitted from the cathode cannot be utilized by the anode. In other words, electrons moving in space are subject to the spatial electric field force, and some electrons cannot be received by the anode, failing to form a complete anode current that is utilized by the system. This reduces electron utilization efficiency and affects the device's output current.
[0010] The nanochannel transistor structure with auxiliary anodes proposed in this invention, based on the cathode, gate, and anode of a traditional nanochannel vacuum transistor, adds a set of auxiliary anodes (such as...) on the side of the anode furthest from the cathode. Figure 3 (As shown). A lower voltage than the anode is applied to the auxiliary anode. The voltage difference between the two creates an electric field between the anode and the auxiliary anode that inhibits electron movement. Under the influence of this electric field, electrons slow down and change direction, with some electrons moving towards the anode (e.g., ...). Figure 4 (As shown). Ultimately, more electrons are received by the anode, thereby increasing the anode's reception rate of electrons emitted from the cathode.
[0011] Because of the auxiliary anode, some electrons that the anode could not originally receive change their direction of motion, reduce their altitude and speed, and are thus received by the anode. A small portion of these are also received by the auxiliary anode. With the addition of the auxiliary anode, due to the shielding effect of the anode, the auxiliary anode voltage does not affect the electric field on the cathode surface, and the total number of electrons emitted by the cathode remains essentially unchanged. Whether it is the anode current or the auxiliary anode current, the electrons reaching both electrodes are modulated by the grid and contain the same modulation state. Therefore, the auxiliary anode current can also be considered as a component of the device's output current, further improving the device's efficiency in collecting electrons emitted from the cathode.
[0012] To further enhance the effectiveness of the auxiliary anode, a height difference can be created between the auxiliary anode and the anode. By increasing the height of the auxiliary anode, making it higher than the anode electrode, some electrons that have crossed the anode's path are intercepted, thereby improving the electron collection rate of the auxiliary anode (e.g., ...). Figure 5(As shown). By increasing the height of the auxiliary anode and applying a voltage lower than the anode voltage to the auxiliary anode, the electric fields between the anode and the auxiliary anode become opposite, causing more electrons to return to the anode and be received by it. Since the auxiliary anode current has the same gate modulation state as the anode current, the auxiliary anode current can also serve as the device's output current, thus working together with the anode to improve electron utilization efficiency.
[0013] When the height of the auxiliary anode electrode is lower than that of the anode, a higher voltage (e.g., ...) needs to be applied to the auxiliary anode. Figure 6 (As shown). Through the positive spatial electric field between the anode and the auxiliary anode, electrons that the auxiliary anode could not originally receive are pulled downwards and accelerated, so that the electrons can be received by the auxiliary anode. At the same time, the change in electron trajectory can also improve the electron reception rate of the anode, thereby improving the utilization rate of electrons emitted by the cathode.
[0014] To prevent excessive voltage difference between the anode and auxiliary anodes from causing irreversible damage such as inter-electrode discharge, multiple auxiliary anodes (1-5) can be used. Taking a nano-vacuum channel transistor containing two auxiliary anodes as an example (e.g.,...) Figure 7 The auxiliary anode closer to the anode is called the first auxiliary anode, and the one farther from the anode is called the second auxiliary anode, and so on. The potential decreases gradually from the anode to the second auxiliary anode, resulting in a reverse electric field between each pair of anodes. This ensures that electrons are suppressed by the electric field between the electrodes, and also prevents excessive voltage difference between the electrodes from damaging the device (e.g., ...). Figure 8 By influencing the electron motion state through multi-stage auxiliary anodes, the electron reception rate of the anode and auxiliary anodes for the cathode is improved.
[0015] This invention also provides a corresponding driving method:
[0016] When only the anode is used as the high-frequency signal output, its driving method is (e.g.) Figure 9 As shown): By applying a DC signal through inductor L1 to the gate. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As the modulation signal, DC voltages are applied through inductor L2 to the anode and auxiliary anode, respectively. and the DC voltage through inductor L3 At this time, the anode receives the amplified signal. Output is through capacitor C2.
[0017] When both the anode and auxiliary anode are used as high-frequency signal outputs, the driving method is as follows (e.g.) Figure 10 As shown): By applying a DC signal through inductor L1 to the gate. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As the modulation signal, DC voltages are applied through inductor L2 to the anode and auxiliary anode, respectively. and the DC voltage through inductor L3 The auxiliary anode receives the amplified signal. The anode receives the amplified signal through capacitor C3. Through capacitor C2. Due to the distance difference between the anode and the auxiliary anode, there is a phase difference between the output high-frequency signals, therefore the high-frequency signal received by the anode... A phase compensation system (a separate circuit module, typically composed of capacitors, inductors, etc., used to adjust the signal phase) is needed to ensure that the output signals have the same phase. and The superposition is called the total output signal of the device. .
[0018] When the anode and multiple auxiliary anodes are simultaneously used as high-frequency signal outputs, taking a nano-vacuum channel transistor containing two auxiliary anodes as an example, its driving method is as follows (e.g.) Figure 11 As shown): By applying a DC signal through inductor L1 to the gate. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As a modulation signal, DC voltages are applied through inductor L2 to the anode, the first auxiliary anode, and the second auxiliary anode, respectively. DC voltage through inductor L3 and the DC voltage through inductor L4 The second auxiliary anode receives the amplified signal. The amplified signal is received by the first auxiliary anode through capacitor C4. The anode receives the amplified signal through capacitor C3. Through capacitor C2. Due to the distance difference between the anode and the auxiliary anode, there is a phase difference between the output high-frequency signals. Therefore, the first auxiliary anode receives the amplified signal. The high-frequency signal needs to be received by the anode through phase compensation system 2. Phase compensation system 1 is required. Both phase compensation systems 1 and 2 are independent circuit modules used to adjust the phase of each output signal, ensuring that the output signals have the same phase. , and The superposition is called the total output signal of the device. .
[0019] Compared with the prior art, the present invention has the following beneficial effects:
[0020] First, the present invention sets up an auxiliary anode on the side of the anode away from the cathode and applies a different DC voltage to it, thereby forming a regulated electric field between the anode and the auxiliary anode. This causes electrons that would otherwise pass the anode and not be collected to change their direction of motion. Some electrons are deflected back and collected by the anode, while others are directly collected by the auxiliary anode, thereby significantly improving the collection rate of electrons emitted by the cathode and the total output current of the device.
[0021] Secondly, this invention further optimizes electron collection by setting a height difference between the auxiliary anode and the anode, and combining this with different voltage application methods: when the auxiliary anode is higher than or equal to the anode and a voltage lower than the anode is applied, a synergistic effect of physical interception and a reverse electric field is formed; when the auxiliary anode is lower than the anode and a voltage higher than the anode is applied, a positive accelerating electric field is formed to attract electrons. Both structures can effectively improve electron collection efficiency, providing flexible design options for different application scenarios.
[0022] Third, by setting up multiple auxiliary anodes (1-5) and applying gradually varying DC voltages, the present invention creates a multi-level reverse suppression electric field between the electrodes. This can gradually reduce the electron velocity and change the direction of electron movement, while avoiding the risk of inter-electrode discharge caused by excessive single-level voltage difference. This improves the electron collection rate while ensuring the reliability and stability of the device.
[0023] Fourth, this invention provides multiple driving methods, supporting both the anode as the only high-frequency signal output and the anode and one or more auxiliary anodes as high-frequency signal output simultaneously. It also eliminates the signal phase difference caused by the difference in distance between electrodes through a phase compensation circuit system, so that the multiple output signals are superimposed after being in phase, maximizing the utilization of the signal energy carried by all the collected electrons, and further improving the total output power and signal of the device. Attached Figure Description
[0024] Figure 1 A schematic diagram of a traditional planar double-gate nano-vacuum channel transistor;
[0025] Figure 2 The electric field direction and electron trajectory of a conventional planar double-gate nano-vacuum channel transistor in operation (cross-sectional view).
[0026] Figure 3 This is a schematic diagram of the planar double-gate nano-vacuum channel transistor structure containing an auxiliary anode proposed in Example 1;
[0027] Figure 4 The electric field direction and electron trajectory of a planar double-gate nano-vacuum channel transistor with an auxiliary anode in operation (cross-sectional view).
[0028] Figure 5To assist in the direction of the electric field and the trajectory of electron motion when the height of the anode electrode is higher than the height of the anode electrode (cross-sectional view);
[0029] Figure 6 To illustrate the direction of the electric field and the trajectory of electrons when the height of the anode electrode is lower than the height of the anode electrode (cross-sectional view);
[0030] Figure 7 A schematic diagram of a planar double-gate nano-vacuum channel transistor structure containing two auxiliary anodes;
[0031] Figure 8 The electric field direction and electron trajectory of a planar double-gate nano-vacuum channel transistor with two auxiliary anodes in operation (cross-sectional view).
[0032] Figure 9 This is a schematic diagram of the drive when only the anode is used as a high-frequency signal output;
[0033] Figure 10 Schematic diagram of the drive when both the anode and auxiliary anode are simultaneously outputting high-frequency signals;
[0034] Figure 11 Schematic diagram of the drive when the anode and two auxiliary anodes are simultaneously used as high-frequency signal outputs. Detailed Implementation
[0035] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0036] Those skilled in the art will understand that in the following detailed description of the embodiments of the present invention, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The following description with reference to the accompanying drawings is exemplary and is only used to explain the present invention, not to limit the present invention.
[0037] Unless otherwise stated, the single forms “a,” “an,” “the,” and “the” used herein may also include plural forms. It should be further understood that the term “comprising” as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be understood that when we say an element is “connected” or “coupled” to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements. Furthermore, “connected” or “coupled” as used herein can include wireless connections or couplings. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.
[0038] Based on the characteristics of electron trajectory in vacuum tubes, this invention proposes a nanochannel transistor containing an auxiliary anode. First, cathode, gate, anode, and auxiliary anode materials are chemically or physically deposited on an insulating substrate 1 of a semiconductor wafer using semiconductor processes. Then, patterned cathode 2, gate 3, anode 4, and auxiliary anode 5 are fabricated using photolithography and etching processes. The cathode 2, gate 3, anode 4, and auxiliary anode 5 together constitute... Figure 3 The diagram shows a nanochannel transistor structure containing an auxiliary anode.
[0039] The cathode 2, gate 3, anode 4, auxiliary anode 5, and the channels between each electrode are atmospheric pressure or vacuum air, which is called air channel. In order to reduce the operating voltage, the electrode spacing between cathode 2 and gate 3, anode 4 and auxiliary anode 5, and cathode 2 and anode 3 are generally set on the submicron level, and finally a nanochannel transistor containing an auxiliary anode is fabricated.
[0040] In the operation of a nanochannel transistor containing an auxiliary anode, a DC signal is applied to the gate 3 as a bias voltage, and a high-frequency signal is superimposed on it as a modulation signal. Different voltages are applied to anode 4 and auxiliary anode 5. When only anode 4 outputs a high-frequency signal, the DC signal on it is isolated by a capacitor, allowing the high-frequency signal to be output, forming the device's output current. When both anode 4 and auxiliary anode 5 output high-frequency signals simultaneously, the DC signals on anode 4 and auxiliary anode 5 are isolated by a capacitor. The high-frequency signal received by anode 4, after DC isolation, passes through a phase compensation system composed of capacitors and inductors, ensuring that the high-frequency signals output by anode 4 and auxiliary anode 5 are in phase. Finally, they jointly output high-frequency signals to form the device's total output signal.
[0041] Example 1
[0042] Figure 3 A planar double-gate nanochannel transistor structure with an auxiliary anode is demonstrated. A cathode 2, a gate 3, an anode 4, and an auxiliary anode 5 are fabricated on an insulating substrate 1 using semiconductor processes, collectively forming the nanochannel transistor with the auxiliary anode. The auxiliary anode 5 is located on the side of the anode 4 furthest from the cathode 2, forming a four-electrode structure. In this embodiment, the auxiliary anode 5 and the anode 4 are located in the same plane, and a DC voltage lower than that applied to the anode 4 is used to collect electrons crossing the anode 4.
[0043] Example 2
[0044] As attached Figure 5As shown, this embodiment illustrates a device structure where the height of the auxiliary anode electrode is greater than that of the anode electrode. In this embodiment, the auxiliary anode 5 has a higher physical height than the anode 4, and a lower DC voltage is applied to it than that of the anode 4. The higher auxiliary anode 5 physically intercepts electrons that cross the anode 4, while the reverse electric field between the anode 4 and the auxiliary anode 5 further pulls electrons back to the anode 4, thereby improving electron collection efficiency.
[0045] Example 3
[0046] As attached Figure 6 As shown, this embodiment illustrates a device structure where the height of the auxiliary anode electrode is lower than that of the anode electrode. In this embodiment, the physical height of the auxiliary anode 5 is lower than that of the anode 4, and a higher DC voltage is applied to it than that of the anode 4. The positive spatial electric field between the anode 4 and the auxiliary anode 5 pulls electrons that would otherwise not be received by the auxiliary anode 5 downwards and accelerates them, allowing the electrons to be received by the auxiliary anode 5. At the same time, it changes the electron trajectory to improve the electron reception rate of the anode 4.
[0047] Example 4
[0048] As attached Figure 7 and attached Figure 8 As shown, this embodiment demonstrates a planar dual-gate nanovacuum channel transistor structure containing two auxiliary anodes. Two auxiliary anodes are sequentially arranged on the side of anode 4 furthest from cathode 2: the one closer to anode 4 is the first auxiliary anode 5-1, and the one furthest from anode 4 is the second auxiliary anode 5-2. In this embodiment, the potentials of anode 4, the first auxiliary anode 5-1, and the second auxiliary anode 5-2 decrease progressively, forming a reverse suppression electric field between each pair of electrodes. This gradually reduces the electron velocity and changes the electron direction, preventing excessive voltage differences between electrodes from damaging the device and further improving the overall electron reception rate.
[0049] Example 5
[0050] As attached Figure 9 As shown, this embodiment describes the driving method when only the anode is used as the high-frequency signal output. A DC signal passing through inductor L1 is applied to gate 3. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As a modulation signal, anode 4 applies a DC voltage through inductor L2. The auxiliary anode 5 is supplied with a DC voltage through inductor L3. At this time, anode 4 receives the amplified signal. The output is through capacitor C2, and the auxiliary anode 5 is only supplied with DC voltage and does not participate in the high-frequency signal output.
[0051] Example 6
[0052] As attached Figure 10As shown, this embodiment illustrates a driving method when both the anode and a single auxiliary anode simultaneously serve as high-frequency signal outputs. This is achieved by applying a DC signal through inductor L1 to gate 3. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As a modulation signal, anode 4 applies a DC voltage through inductor L2. The auxiliary anode 5 is supplied with a DC voltage through inductor L3. Anode 4 receives the amplified signal. The amplified signal is output through capacitor C2 and received by auxiliary anode 5. The output is through capacitor C3. Due to the distance difference between anode 4 and auxiliary anode 5, there is a phase difference between the output high-frequency signals. Therefore, the high-frequency signal received by anode 4... A phase compensation system composed of capacitors and inductors (in this embodiment, the phase compensation system is composed of capacitors and inductors) is needed to ensure that the output signals have the same phase. and The signals are superimposed to form the total output signal of the device. .
[0053] Example 7
[0054] As attached Figure 11 As shown, this embodiment illustrates a driving method when the anode and two auxiliary anodes simultaneously serve as high-frequency signal outputs. A DC signal passing through inductor L1 is applied to gate 3. As a bias voltage, a high-frequency signal passing through capacitor C1 is superimposed on it. As a modulation signal, anode 4 applies a DC voltage through inductor L2. The first auxiliary anode 5-1 is supplied with a DC voltage through inductor L3. The second auxiliary anode 5-2 is supplied with a DC voltage through inductor L4. Anode 4 receives the amplified signal. The amplified signal is output through capacitor C2 and received by the first auxiliary anode 5-1. The amplified signal is output through capacitor C3 and received by the second auxiliary anode 5-2. The output is through capacitor C4. Due to the distance difference between anode 4 and auxiliary anodes 5-1 and 5-2, there is a phase difference between the output high-frequency signals. Therefore, the first auxiliary anode 5-1 receives the amplified signal. The high-frequency signal that needs to be received by phase compensation system 2 and anode 4 Phase compensation system 1 is needed to ensure that the output signals have the same phase, ultimately... , and The signals are superimposed to form the total output signal of the device. .
[0055] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A nanochannel transistor structure containing an auxiliary anode, comprising an insulating substrate, and a cathode, a gate, and an anode fabricated on the insulating substrate, wherein a vacuum channel is formed between the cathode, the gate, and the anode, characterized in that: At least one auxiliary anode is provided on the side of the anode away from the cathode; The auxiliary anode is provided with electrode lead terminals for connecting to an external DC voltage source to apply a DC voltage different from that of the anode; There is a voltage difference between the auxiliary anode and the anode to form a modulated electric field between the anode and the auxiliary anode, thereby changing the direction and speed of electrons moving across the anode.
2. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: The number of auxiliary anodes is multiple, and the multiple auxiliary anodes are arranged sequentially in a direction away from the anode.
3. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: The height of the auxiliary anode is greater than or equal to the height of the anode, and the auxiliary anode is configured to apply a DC voltage lower than that of the anode.
4. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: The height of the auxiliary anode is lower than or equal to the height of the anode, and the auxiliary anode is configured to apply a higher DC voltage than the anode.
5. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: The cathode is made of metallic or semiconductor materials, and the gate, anode, and auxiliary anode are made of conductive materials.
6. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: The distance between the cathode and the gate, and between the gate and the anode, is less than 1 micrometer, forming a nano-vacuum channel.
7. The nanochannel transistor structure containing an auxiliary anode according to claim 1, characterized in that: At least one additional electrode is provided between the cathode and the gate, and / or between the gate and the anode.
8. A driving method for a nanochannel transistor structure containing an auxiliary anode as described in any one of claims 1 to 7, characterized in that, Includes the following steps: Different DC voltages are applied to the anode and the auxiliary anode respectively, thereby forming a regulated electric field between the anode and the auxiliary anode; A DC bias voltage is applied to the gate, and a high-frequency modulation signal is superimposed on the DC bias voltage to control the cathode to emit a modulated electron beam; The electrons collected by the anode and / or the auxiliary anode are converted into electrical signals for output.
9. The driving method according to claim 8, characterized in that, It also includes the following steps: When only the anode is used as the high-frequency signal output terminal, the DC component on the anode is isolated by the first capacitor, and a high-frequency amplified signal is output. When the anode and the auxiliary anode are both used as high-frequency signal output terminals, the DC components on the anode and the auxiliary anode are isolated by the second capacitor and the third capacitor, respectively, and their respective high-frequency amplified signals are output.
10. The driving method according to claim 9, characterized in that, When the anode and multiple auxiliary anodes are simultaneously used as high-frequency signal output terminals, a phase compensation step is also included: Phase compensation is performed on the high-frequency amplified signals at each output terminal to eliminate the phase difference caused by the difference in distance between electrodes; The phase-compensated multi-channel high-frequency amplified signals are superimposed to form the total output signal.