Jetting device, substrate processing device, substrate processing method, method of manufacturing semiconductor device, and program product
By designing injection holes arranged at a specific angle in a vertical substrate processing device, the nozzle flow path area is expanded, solving the problem of insufficient gas flow control and achieving more effective gas flow control.
CN122158440APending Publication Date: 2026-06-05KOKUSAI DENKI KK
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KOKUSAI DENKI KK
- Filing Date
- 2025-11-12
- Publication Date
- 2026-06-05
AI Technical Summary
Technical Problem
In vertical substrate processing equipment, the flow path area of the processing gas is small, which makes it impossible to effectively control the gas flow in the processing container.
Method used
The first and second nozzles are arranged with their end faces facing the substrate and extending vertically relative to the main surface of the substrate. The positions of the spray holes are arranged in a certain angular order to form roughly parallel spray holes, thereby expanding the flow path area of the nozzles.
Benefits of technology
By increasing the nozzle flow path area, gas backflow is suppressed, thus improving the gas flow control effect.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122158440A_ABST
Abstract
The present disclosure provides a technology capable of expanding the flow path area of a gas. An injection apparatus has a first nozzle and a second nozzle facing an end surface of a substrate and extending in a vertical direction with respect to a main surface of the substrate, the first nozzle and the second nozzle each having a front surface continuously formed on a substrate-facing side, and a plurality of injection holes arranged on the front surface in a direction parallel to the main surface of the substrate and injecting a gas toward the substrate, when a direction from a center of arrangement of the first nozzle and the second nozzle toward a center of the substrate is a reference direction, the front surface is formed so that an angle of each normal line of the front surface at a position where the plurality of injection holes are arranged with respect to the reference direction increases in the arrangement order of the plurality of injection holes, an injection hole closest to the other side nozzle of the first nozzle or the second nozzle among the plurality of injection holes of the first nozzle and the second nozzle is formed on substantially the same tangent plane, and the gas is injected substantially parallel to each other.
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