Method of manufacturing an array sensor element
By forming a piezoelectric layer at the tapered end and the covering end of the first electrode during the manufacturing process of the piezoelectric element, the problem of mismatch in the crystal structure of the piezoelectric film is solved, the crystallinity and orientation of the piezoelectric element are improved, and the sensor performance is enhanced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEIKO EPSON CORP
- Filing Date
- 2025-12-03
- Publication Date
- 2026-06-05
AI Technical Summary
In existing piezoelectric elements, when the piezoelectric film covers the end of the lower electrode, the crystal structure of the piezoelectric film is mismatched with the side of the lower electrode, resulting in a decrease in overall crystallinity and orientation, which affects the sensor performance.
During the manufacturing process, a piezoelectric body layer and a second electrode layer are formed by forming a cone shape with an angle of less than 90° between the lower surface and the side surface at the end of the first electrode, and by covering the end of the first electrode in the piezoelectric element region with a gas containing chlorine and oxygen for dry etching, in order to ensure the crystallinity and orientation of the piezoelectric element region.
This improved the crystallinity and orientation of the piezoelectric element region, suppressed stress-induced degradation, and enhanced the piezoelectric performance and response speed of the sensor element.
Smart Images

Figure CN122161335A_ABST