Substrate processing apparatus and substrate processing method

Abstract

The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a coating liquid supply section that supplies a coating liquid; at least one of a removal liquid supply section that supplies a removal liquid for removing a coating film to a peripheral portion of a substrate on which the coating film is formed and that rotates, and a cleaning liquid supply section that supplies a cleaning liquid for cleaning a back surface of the substrate to the substrate; an exhaust amount adjustment section that adjusts an exhaust amount of a cup; and a control section that performs a first step of exhausting the cup at a first exhaust amount when the coating liquid is supplied to the substrate, a second step of exhausting the cup at a second exhaust amount after the coating liquid is supplied to the substrate and before the removal liquid or the cleaning liquid is supplied to the substrate, and a third step of exhausting the cup at a third exhaust amount when the removal liquid or the cleaning liquid is supplied to the substrate, the control section outputting a control signal to make the second exhaust amount smaller than the first exhaust amount and the third exhaust amount.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] In the manufacturing process of semiconductor devices, for example, a coating film such as a resist film is formed on a substrate such as a semiconductor wafer (hereinafter referred to as a wafer). Patent Document 1 shows an example of a substrate processing apparatus for forming this resist film. In this substrate processing apparatus, when forming the coating film on a wafer held in a cup, the exhaust volume inside the cup is relatively high during the supply of the coating liquid to prevent the atomized coating liquid from the wafer from scattering. Furthermore, the exhaust volume inside the cup is relatively low after the supply of the coating liquid is completed and before the wafer is removed from the cup.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-206019 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for suppressing the generation of mist and splashing of the processing liquid when supplying a processing liquid to a substrate for processing.

[0008] Solution for solving the problem

[0009] The substrate processing apparatus disclosed herein includes:

[0010] The cup, which contains the base plate;

[0011] A rotating retaining part is used to hold the substrate within the cup and rotate the substrate.

[0012] A coating liquid supply unit supplies coating liquid to form a coating film on the surface of the substrate;

[0013] At least one of a removal liquid supply unit and a cleaning liquid supply unit, wherein the removal liquid supply unit supplies removal liquid to the peripheral portion of the substrate on which the coating film is formed and rotated, for removing the coating film, and the cleaning liquid supply unit supplies cleaning liquid to the substrate on which the coating film is formed and rotated, for cleaning the back side of the substrate.

[0014] The exhaust volume adjustment unit adjusts the exhaust volume inside the cup; and

[0015] The control unit performs a first step of venting the cup with a first venting volume when the coating liquid is supplied to the substrate, a second step of venting the cup with a second venting volume after the coating liquid is supplied to the substrate and before the removal liquid or the cleaning liquid is supplied to the substrate, and a third step of venting the cup with a third venting volume when the removal liquid or the cleaning liquid is supplied to the substrate. The control unit outputs a control signal to make the second venting volume less than the first venting volume and the third venting volume.

[0016] Invention Effects

[0017] This disclosure enables the suppression of mist and splashing of the processing liquid when supplying processing liquid to the substrate for processing. Attached Figure Description

[0018] Figure 1 This is a longitudinal sectional side view of the substrate processing apparatus according to the first embodiment.

[0019] Figure 2 This is a top view of the substrate processing apparatus.

[0020] Figure 3 This is a flowchart illustrating a reference example of the processing of the substrate processing apparatus.

[0021] Figure 4 This is a longitudinal sectional side view showing the substrate processing apparatus during wafer processing.

[0022] Figure 5 This is a longitudinal sectional side view showing the substrate processing apparatus during wafer processing.

[0023] Figure 6 This is a longitudinal sectional side view showing the substrate processing apparatus during wafer processing.

[0024] Figure 7 It is a graph showing the film thickness distribution of the wafer obtained through experiments.

[0025] Figure 8 It is a graph showing the film thickness distribution of the wafer obtained through experiments.

[0026] Figure 9 This is a flowchart illustrating the process of the first embodiment.

[0027] Figure 10 This is a flowchart illustrating the process of the second embodiment.

[0028] Figure 11 This is a longitudinal sectional side view of the substrate processing apparatus during the implementation of the second embodiment.

[0029] Figure 12 This is a longitudinal sectional side view of a substrate processing apparatus for a cup with a modified example.

[0030] Figure 13 This is a top view of a substrate processing apparatus for a cup with a modified version.

[0031] Figure 14 This is a longitudinal sectional side view showing the substrate processing apparatus during wafer processing.

[0032] Figure 15 This is a top view of a substrate processing apparatus with a modified sub-processing unit.

[0033] Figure 16 This is a longitudinal sectional side view of a substrate processing apparatus with a modified sub-processing unit.

[0034] Figure 17 This is a top view of a substrate processing apparatus with a modified sub-processing unit.

[0035] Figure 18 This is a longitudinal sectional side view of a substrate processing apparatus with a modified sub-processing unit. Detailed Implementation

[0036] [First Embodiment]

[0037] Reference Figure 1 Longitudinal sectional side view and Figure 2 The substrate processing apparatus 1 according to the first embodiment is illustrated by a top view. The substrate processing apparatus 1 supplies a photoresist as a coating liquid to the center of a wafer W, which is a circular substrate. The photoresist is spin-coated onto the entire surface of the wafer W to form a photoresist film. Furthermore, in the substrate processing apparatus 1, before forming the photoresist film, a pre-wetting process (pre-wetting) is performed, in which a solvent for the photoresist is supplied to the surface of the wafer W to improve the wettability of the photoresist relative to the surface of the wafer W.

[0038] In addition, in the substrate processing apparatus 1, after the resist film is exposed to the airflow and dried and cured by rotating the wafer W, the wafer W is subjected to EBR (Edge Bead Removal) treatment and back-side cleaning treatment. EBR treatment involves dissolving the resist film by supplying a solvent of the resist to the peripheral portion of the rotating wafer W's surface, thereby removing it from that peripheral portion. Back-side cleaning treatment involves cleaning the back side (lower surface) of the rotating wafer W by supplying a solvent of the resist film as a cleaning solution. EBR treatment and back-side cleaning treatment are performed in parallel. The resist, pre-wetting solvent, back-side cleaning solvent (cleaning solution), and EBR treatment solvent (removal solution) described above are processing solutions used to process the wafer W, wherein the resist is a coating solution formed by coating the wafer W to form a resist film as a coating film.

[0039] The substrate processing apparatus 1 includes a rotating holding disk (chuck) 21, a rotating mechanism 23, a cup 3, exhaust pipes 44 and 45, a main processing unit 5, and a sub-processing unit 6. The main processing unit 5 supplies resist and pre-wetting solvent, while the sub-processing unit 6 supplies solvent for EBR processing. The rotating holding disk 21, which serves as the rotating holding unit, holds the central portion of the back side of the wafer W horizontally and is connected to the rotating mechanism 23 via a shaft 22 extending in the vertical direction. The rotating mechanism 23 causes the rotating holding disk 21 and the held wafer W to rotate together about the vertical axis. Furthermore, although not shown in the figure, the substrate processing apparatus 1 includes a transport mechanism for transporting the wafer W to the substrate processing apparatus 1, and a lifting member that can freely move up and down to transport the wafer W between itself and the rotating holding disk 21.

[0040] A rotating holding disk 21 is disposed within a circular cup 3 when viewed from above. The wafer W is housed within the cup 3 and thus held within the rotating holding disk 21. The cup 3 catches various processing liquids that spill or fall from the wafer W and removes these liquids from a drain port 43 located at the bottom. The interior of the cup 3 is vented to prevent processing liquids from spilling out of the cup 3.

[0041] The cup 3 includes an outer cup 31. The outer cup 31 forms the outer wall of the cup 3, surrounding the sides of the wafer W and the rotating holding disk 21. The outer cup 31 has an upright cylindrical sidewall 32 and an annular upper wall portion 33 extending from the upper part of the sidewall 32. The upper wall portion 33 is described in detail. The front end of the upper wall portion 33 extends obliquely upward toward the center side of the cup 3. Moreover, the top end of the upper wall portion 33 protrudes vertically upward and vertically downward, respectively, thereby forming an annular upper protrusion 34A and a lower protrusion 34B when viewed from above. These upper protrusions 34A and lower protrusions 34B prevent liquid (including mist) from scattering to the outside of the cup 3. In addition, the lower protrusion 34B prevents mist from scattering by preventing the backflow of airflow flowing below the upper wall portion 33. The circular space surrounded by the top end of the upper wall portion 33, which has an upper protrusion 34A and a lower protrusion 34B, is the opening 34C of the cup 3.

[0042] Additionally, the cup 3 includes an inner member 35 surrounded by an outer cup 31, and the inner member 35 surrounds the shaft 22. The center side of the inner member 35 is formed, for example, a horizontal plate shape, constituting a center side region 35A, where a back-side cleaning nozzle 41 for cleaning the back side of the wafer W is disposed. For example, multiple back-side cleaning nozzles 41 are provided separately in the circumferential direction of the cup 3. In the illustrated example, two back-side cleaning nozzles 41 are shown. Each back-side cleaning nozzle 41 is connected to a cleaning fluid supply mechanism 42, which includes, for example, a valve, a pump, and a storage unit for storing the aforementioned cleaning fluid as a solvent. The cleaning fluid supply mechanism 42 can deliver the cleaning fluid from the storage unit to each back-side cleaning nozzle 41. The back-side cleaning nozzles 41 supply the cleaning fluid to the back side of the wafer W for back-side cleaning by spraying the cleaning fluid obliquely upwards from the center side of the cup 3 toward the peripheral side. The back-side cleaning nozzles 41 and the cleaning fluid supply mechanism 42 correspond to the cleaning fluid supply unit.

[0043] The inner member 35 has a sloping region 35B formed on its peripheral side that descends towards the peripheral side of the cup 3, guiding the liquid falling from the wafer W toward the bottom of the cup 3. Furthermore, the inner member 35 has a cylindrical descending wall 36 that rises vertically downward from the outer peripheral end of the sloping region 35B, and a gap is formed between the descending wall 36 and the side wall 32 of the outer cup 31 to form a discharge path for the processing liquid and gas.

[0044] Additionally, the cup 3 has an annular bottom wall 37 arranged to surround the rotating mechanism 23. The outer periphery of the bottom wall 37 is connected to the lower end of the outer cup 31, and the bottom wall 37 forms the bottom of the cup 3. The inner periphery of the bottom wall 37 extends upward to form a vertical wall, and the upper end of the vertical wall extends horizontally toward the periphery of the cup 3 to form a horizontal wall that connects to the upper end of the descending wall 36 and the upper end of the inclined region 35B. These vertical and horizontal walls are referred to as spacer walls 38.

[0045] A drain port 43 is provided in the bottom wall 37. Additionally, multiple, for example two, upright vent pipes 44 are provided in the bottom wall 37. The upper end of each vent pipe 44 is positioned slightly above the lower end of the descending wall 36, thereby preventing liquid from flowing into the vent pipe 44. In other words, gas and liquid are separated within the cup 3; the liquid flows into the drain port 43, and the gas flows into the vent pipes 44. The downstream sides of the two vent pipes 44 merge to form a single vent pipe 45.

[0046] A pressure detection unit 46 is provided in the exhaust pipe 45. Additionally, a damper 47 is provided downstream of the location of the pressure detection unit 46 in the exhaust pipe 45. Furthermore, the downstream end of the exhaust pipe 45 is connected to an exhaust source (not shown). Exhaust is continuously pumped into the cup 3 via this exhaust source through the exhaust pipes 44 and 45, and the surrounding gas, such as atmospheric air, flows into the cup 3 through the opening 34C. This exhaust source is, for example, the exhaust path of a factory equipped with the substrate processing apparatus 1, and is set to negative pressure relative to atmospheric pressure.

[0047] The pressure detection unit 46 sends a detection signal corresponding to the pressure inside the exhaust pipe 45 at the upstream position of the damper 47 to the control unit 100, which will be described later. The control unit 100 can detect the pressure inside the exhaust pipe 45 at the upstream position of the damper 47 based on this detection signal. In the following description, the pressure detected by the pressure detection unit 46 in this way will be defined as the exhaust pressure. The damper 47, which is an exhaust volume adjustment unit, operates according to the control signal output from the control unit 100, adjusting the opening of the damper 47 so that the exhaust pressure becomes the set value.

[0048] As described above, the substrate processing apparatus 1 includes an exhaust path connected to the inside of the cup 3, formed by exhaust pipes 44 and 45 and a damper 47, and the opening of the exhaust path is adjusted by the damper 47. The exhaust pressure detected by the pressure detection unit 46, the exhaust volume flowing from the cup 3 to the exhaust pipes 44 and 45 per unit time, and the opening of the damper 47 are corresponding. The larger the opening of the damper 47, the larger the exhaust volume flowing from the cup 3 to the exhaust pipes 44 and 45 per unit time, and the higher the exhaust pressure.

[0049] Returning to the description inside cup 3. Above the inner member 35 inside cup 3, there is an annular plate-shaped intermediate member 48 extending obliquely upward from the periphery of cup 3 toward the center of cup 3. The front end of the intermediate member 48 is close to the wafer W, and the upper surface of the intermediate member 48 is configured as an inclined surface 48A that descends toward the periphery. The base end of the intermediate member 48 is supported by a plurality of support members 49 arranged separately from each other in the circumferential direction of cup 3. The airflow flowing between the intermediate member 48 and the upper wall 33 of the outer cup 31 flows through the flow path formed between the support members 49 into the gap formed between the side wall 32 and the descending wall 36 of the outer cup 31, and goes toward the bottom wall 37 of cup 3.

[0050] The outer cup 31, the intermediate member 48, and the inner member 35 are aligned along their central axes when viewed from above, i.e., coaxially configured. Furthermore, by making the opening 34C of the cup 3 formed by the upper wall portion 32 of the outer cup 31 relatively large, the edge of this opening 34C is located above the inclined region 35B of the intermediate member 48 and the inner member 35. Assuming that the intermediate member 48 and the upper wall portion 33 are close together at the periphery of the wafer W due to the relatively small opening 34C, the airflow velocity at this location is relatively high during the drying process of the resist R (described later), potentially increasing the difference in resist film thickness between the center and periphery sides of the wafer W. To prevent this adverse condition, the opening 34C is made relatively large as described above.

[0051] The formation example of opening 34C will be described in more detail. The center position in the horizontal direction of the inclined surface 48A of the intermediate member 48 is designated as M. That is, the center position M is an imaginary circle that divides the inclined surface 48A into an inner ring and an outer ring with the same width M1 when viewed from above. For example, the front end of the upper wall portion 33 (i.e., the position of the inner periphery of the annular upper protrusion 34A and lower protrusion 34B) is located closer to the periphery of the cup 3 than this center position M. In other words, when viewed from above, the center position M overlaps with the opening 34C of the cup 3, and the center position M is exposed. By making the opening 34C relatively large as described above, it is effective to provide liquid-receiving portions 71 and 72 to prevent liquid splashing, as will be described in detail later as a variation of the device.

[0052] Next, the main processing unit 5 will be described. The main processing unit 5 includes a resist supply nozzle 51, a solvent supply nozzle 52, a resist supply mechanism 53, a solvent supply mechanism 54, an arm 55, a moving mechanism 56, a guide 57, and a standby unit 58. Multiple resist supply nozzles 51 are provided, for example, and spray resist supplied by the resist supply mechanism 53 vertically downwards. The solvent supply nozzle 52 sprays resist supplied by the solvent supply mechanism 54 vertically downwards. The resist supply mechanism 53 includes a pump, a valve, a resist storage unit, etc., and is capable of supplying resist from the resist storage unit to the resist supply nozzle 51. The solvent supply mechanism 54 includes a pump, a valve, a solvent storage unit, etc., and is capable of supplying solvent from the solvent storage unit to the solvent supply nozzle 52.

[0053] Multiple resist supply mechanisms 53 are provided, each supplying resist to different resist supply nozzles 51. The types of resist supplied from each resist supply mechanism 53 are different. Therefore, different types of resist are ejected from each resist supply nozzle 51. In the processing of wafer W, resist is supplied from one of the multiple resist supply nozzles 51 for processing. In the illustrated example, two groups of resist supply nozzles 51 and resist supply mechanisms 53 are shown, but the number of such groups can also be more than two. The resist supply nozzles 51 and resist supply mechanisms 53 correspond to the coating liquid supply section.

[0054] A resist supply nozzle 51 and a solvent supply nozzle 52 are supported on the front end side of arm 55. The base end of arm 55 is connected to a moving mechanism 56. The moving mechanism 56 can move horizontally along the guide 57 and can raise and lower arm 55. A box-shaped standby section 58 with an upward opening is provided on the outer side of cup 3. Through the moving mechanism 56, the resist supply nozzle 51 and the solvent supply nozzle 52 can move between the opening of the standby section 58 and the inside of cup 3, supplying solvent and resist to the center of wafer W, respectively.

[0055] Next, the sub-processing unit 6 will be described. The sub-processing unit 6 includes a removal liquid supply nozzle 61 for supplying solvent to the resist as a removal liquid, a removal liquid supply mechanism 64, an arm 65, a moving mechanism 66, a guide 67, and a standby unit 68. The removal liquid supply nozzle 61 sprays the solvent pressurized from the removal liquid supply mechanism 64 downwards. The removal liquid supply mechanism 64 includes a pump, a valve, a removal liquid storage unit, etc., and can pressurize the removal liquid (solvent) in the storage unit to the removal liquid supply nozzle 61. The removal liquid supply nozzle 61 and the removal liquid supply mechanism 64 constitute the removal liquid supply unit.

[0056] A removal fluid supply nozzle 61 is supported at the front end of arm 65. The base end of arm 65 is connected to a moving mechanism 66. The moving mechanism 66 can move horizontally along guide 67 and can raise and lower arm 65. A box-shaped standby section 68 with an upward opening is provided on the outer side of cup 3. The removal fluid supply nozzle 61 can move between the opening of standby section 68 and the inside of cup 3 via the moving mechanism 66, supplying removal fluid to the periphery of wafer W.

[0057] The cleaning fluid supply nozzle 61 sprays cleaning fluid in a direction inclined relative to the vertical direction when viewed from the side, and sprays cleaning fluid from the center side of the wafer W toward the periphery when viewed from above. Furthermore, the wafer W rotates clockwise when viewed from above, and the cleaning fluid is sprayed in the direction along the rotation of the wafer W. That is, the spraying direction of the cleaning fluid is set relative to the rotation direction of the wafer W so that the solvent sprayed and landing on the wafer W immediately leaves the cleaning fluid supply nozzle 61 due to the rotation of the wafer W after landing.

[0058] Next, regarding Figure 1 The control unit 100 shown will be described below. The control unit 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing apparatus 1. Additionally, the program storage unit also stores programs for controlling the operation of various moving mechanisms, drive mechanisms, and other drive systems; the supply and cut-off of processing liquid from various processing liquid supply mechanisms; and the opening degree of the damper 47 to achieve the processing of the wafer W in the substrate processing apparatus 1. This program includes a set of steps required to perform the transport and processing of the wafer W in the substrate processing apparatus 1. The control unit 100 outputs control signals to each part of the substrate processing apparatus 1 through the program, controlling each part as described above, thereby performing the transport and processing.

[0059] The aforementioned program can also be recorded in a computer-readable storage medium H and installed from that storage medium H into the control unit 100. The storage medium H may include ROM, RAM, or a hard disk, but its structure and type are not limited; it can be transient or non-transient. Furthermore, the control unit 100 can include components for storing, reading, and executing programs used to implement board processing, as well as related communications. The location of each component can be configured either inside or outside the board processing apparatus 1. The control unit 100 can be one or more circuits, or it can be integrated into a single unit or partially separated.

[0060] Before describing the processing of the embodiment performed in the substrate processing apparatus 1, refer to Figure 3A timing diagram is provided to illustrate the processing of a reference example that can be performed in the substrate processing apparatus 1. This timing diagram shows the changes in rotational speed and exhaust pressure during a series of processing steps on the wafer W. As described above, the exhaust pressure and the exhaust volume within the cup 3 change according to the opening degree of the damper 47 provided in the exhaust pipe 45. Therefore, Figure 3 The graph showing the change in exhaust pressure also shows the change in exhaust volume within cup 3 and the opening of damper 47. Additionally, a longitudinal sectional side view of the substrate processing apparatus 1, showing the state of the wafer W being processed, is also appropriately referenced. Figures 4-6 . Figures 4-6 The solid or dashed arrows in the diagram represent the airflow supplied to cup 3. Compared to the case shown by the solid arrow, the airflow velocity is lower in the case shown by the dashed arrow, indicating a low exhaust pressure.

[0061] Under a relatively high exhaust pressure A1, a predetermined amount of solvent is supplied from the solvent supply nozzle 52 to the center of the surface of the wafer W held on the rotating holding disk 21, and the wafer W rotates at a rotational speed B1 (time t1). The solvent diffuses towards the periphery of the wafer W, thereby pre-wetting. Then, after the rotational speed of the wafer W decreases, for example, after the rotation temporarily stops (time t2), a predetermined amount of resist is supplied from the resist supply nozzle 51 to the center of the surface of the wafer W, and the rotational speed of the wafer W increases to B2, which is higher than B1 (time t3). The resist R diffuses towards the periphery of the wafer W, thereby spin-coating. That is, as... Figure 4 As shown, the entire surface of wafer W is covered with resist R.

[0062] After the resist R is stopped from being ejected from the resist supply nozzle 51 and the entire surface of the wafer W is covered by the resist R, the rotational speed of the wafer W decreases to B3 (time t4), adjusting the in-plane distribution of the resist R on the wafer W. Then, the opening of the damper 47 decreases, thereby reducing the exhaust pressure (i.e., reducing the exhaust volume from cup 3) to A2, and the rotational speed of the wafer W increases to B4 (time t5). The resist R is exposed to the airflow, and the evaporation of the solvent contained in the resist R progresses. That is, the drying of the resist R progresses, thereby curing the resist R. Thus, as... Figure 5 As shown, a resist film R1 is formed.

[0063] Next, the opening of damper 47 increases, thereby increasing the exhaust pressure (i.e., increasing the exhaust volume from cup 3), for example, returning to A1, and the rotational speed of wafer W increases to B5. Remover L1 is sprayed from the remover supply nozzle 61 onto the periphery of the wafer W surface for EBR (time t6). Additionally, cleaning fluid L2 is sprayed from the back cleaning nozzle 41 onto the back side of wafer W to clean it. The resist film R1 at the periphery of wafer W is removed, and the entire periphery of the back side of wafer W is cleaned. Then, for example, after stopping the supply of cleaning fluid L2 to wafer W, the supply of remover L1 to wafer W is stopped, and the rotational speed of wafer W decreases, for example, returning to B1 (time t7). After drying wafer W by rotating it to remove remover L1 and cleaning fluid L2, the wafer W is stopped rotating, and the processing of wafer W ends (time t8).

[0064] In the above reference example, it is assumed that the values ​​of exhaust pressures A1 and A2 remain unchanged between wafers W. That is, when processing each wafer W, first transferred to the apparatus and subsequent wafers W, processing is performed in a manner that changes the opening of damper 47 in the same way from time t1 to t8. The exhaust pressure A1 is, for example, 60 Pa, and the exhaust pressure A2 is, for example, 20 Pa. In the following explanation, the period from t5 to t6, during which the exhaust pressure is A2 to dry the resist R and form the resist film R1, will be referred to as the drying period. Since the processing of wafer W progresses as described above, this drying period is a period during which no processing solution is supplied to wafer W.

[0065] The process of setting the exhaust pressure to A1 via damper 47 during times t1 to t5 (i.e., the period including the supply of coating liquid to the substrate) corresponds to the first step. The process of setting the exhaust pressure to A2 via damper 47 during times t5 to t6 (i.e., the period after the supply of coating liquid to the substrate and before the supply of cleaning liquid and removal liquid) corresponds to the second step. The process of setting the exhaust pressure to A1 via damper 47 during times t6 to t7 (i.e., the period before the drying of wafer W, t7 to t8) corresponds to the third step. Moreover, as described above, since exhaust pressure A1 > A2, when the exhaust volume in cup 3 in the first, second, and third steps is set to the first exhaust volume C1, the second exhaust volume C2, and the third exhaust volume C3, respectively, the operation of damper 47 is controlled by a control signal from control unit 100 so that the first exhaust volume C1 = the third exhaust volume C3 > the second exhaust volume C2.

[0066] During the periods t1 to t5 and t6 to t7, when the processing solution is sprayed out and the rotational speed of wafer W is set to a relatively high value to allow the processing solution to diffuse on wafer W, a relatively large amount of mist is generated in cup 3. In order to prevent the mist from flowing out of cup 3 and contaminating other wafers W and devices, the exhaust pressure is set to a relatively high A1 during these periods, and the mist is removed by the exhaust flow formed in cup 3.

[0067] In addition, regarding the resist film R1, the film thickness at the periphery of wafer W relative to the film thickness at the center of wafer W varies depending on the exhaust pressure A2 during drying. Figure 7 The graph shows the results of Experiment 1, on which it is based. In Experiment 1, except for different settings for the exhaust pressure A2, multiple wafers W were treated as reference examples under the same conditions, and then the thickness of the resist film R1 formed on each wafer W was measured at various locations within the surface of the wafer W.

[0068] The vertical axis of the graph represents the thickness of the resist film R1, marked with graduations at regular intervals. The horizontal axis represents the distance from the center of wafer W at various points along its diameter. On this horizontal axis, graduations are marked at fixed intervals, with 2γ and -2γ graduations representing the ends of wafer W, respectively. As shown in the graph, the greater the exhaust pressure A2 during drying (i.e., the greater the exhaust volume per unit time from cup 3), the greater the thickness of the resist film R1 at the periphery of wafer W. Moreover, depending on the exhaust pressure A2 setting, the film thickness at the periphery of wafer W is sometimes smaller than that at the center, and sometimes larger. Based on these experimental results, it can also be considered that the smaller the exhaust pressure A2, the stronger the effect of reducing the film thickness of the resist film R1 at the periphery of wafer W.

[0069] As described above, when the exhaust pressure A2 during drying becomes too high, the uniformity of the film thickness within the surface of wafer W decreases due to the increased film thickness at the periphery of wafer W. Therefore, the exhaust pressure A2 during drying is set to a value lower than the exhaust pressure A1 during times t1 to t5 and t6 to t7 to prevent mist from scattering from cup 3 and to prevent the undesirable situation of decreased film thickness uniformity. The relationship of the exhaust volume within cup 3 is set as described above: first exhaust volume C1 = third exhaust volume C3 > second exhaust volume C2.

[0070] Additionally, the following explanation is based on insights from other experiments. The thickness of the resist film R1 after treatment varies depending on the wafer rotation speed B4 during drying. Figure 8 This is a graph representing the results of Experiment 2, which serves as the basis for this analysis. Figure 8 In the curve graph, with Figure 7Similarly, in the graph, the horizontal axis is set to the distance from the center of wafer W, and the vertical axis is set to the thickness of the resist film R1. In this experiment 2, except for different settings for the rotation speed B4, multiple wafers W were treated as reference examples under the same conditions, and then the thickness of the resist film R1 formed on each wafer W was measured at various locations within the surface of wafer W.

[0071] Such as Figure 8 As shown in the curve, the higher the rotational speed B4 during drying, the smaller the thickness of the resist film R1 across the entire plane of wafer W. Furthermore, this... Figure 8 The diagram shows how the difference in film thickness between the center and periphery of wafer W varies with rotational speed B4. More specifically, the smaller the rotational speed B4, the greater the film thickness at the periphery of wafer W relative to the film thickness at the center.

[0072] Another experiment and its verification are described. Since no processing solution is supplied to wafer W during the drying period, the scattering of mist out of cup 3 is suppressed compared to the periods before drying (times t1-t5) and after drying (times t6-t7) when processing solution is supplied. However, during this drying period, the higher the rotational speed B4 of wafer W or the lower the exhaust pressure, the higher the risk of mist scattering out of cup 3. Table 1 below shows the results of Experiment 3 on which it is based.

[0073] In Experiment 3, the combination of rotational speed B4 and exhaust pressure A2 was varied for each wafer W, and multiple wafers W were processed as reference examples. The amount of mist detected by a detector placed outside the cup 3 during the drying process was measured. In Table 1, the combination of rotational speed B4 and exhaust pressure A2 when mist was detected is represented as NG. As shown in Table 1, Experiment 3 shows that in order to prevent mist from scattering outside the cup 3, the exhaust pressure A2 should be set to 20 Pa or higher within the range where rotational speed B4 is greater than 2000 rpm. In addition, it is known that within the range where rotational speed B4 is less than 2000 rpm, the exhaust pressure can be kept below 20 Pa, for example, set to 10 Pa or higher.

[0074] Table 1

[0075]

[0076] As in Figure 8As illustrated in Experiment 2, the thickness of the resist film R1 across the entire surface of wafer W is determined by the rotational speed B4 of wafer W during drying. Therefore, this rotational speed B4 is determined so that a resist film R1 with the desired thickness is formed on wafer W during the processing of the reference example. For example, the rotational speed B4 is determined based on data sent from a host computer to the control unit 100, which is located in a factory equipped with a substrate processing apparatus 1.

[0077] However, as mentioned above, the rotational speed B4 is a parameter that causes the thickness of the resist film R1 to vary across the entire surface of the wafer W, and it is also a parameter that causes the difference in the thickness of the resist film R1 between the periphery and the center of the wafer W. In order to form a resist film R1 with a desired thickness on the wafer W, the rotational speed B4 is sometimes set to a lower value that results in a relatively larger thickness of the resist film R1 at the periphery of the wafer W.

[0078] On the other hand, when considering the exhaust pressure A2 during drying, a relatively high exhaust pressure A2 is sufficient to prevent mist from flowing out of cup 3. As shown in Table 1, within the speed range of 1000 rpm to 4000 rpm, an exhaust pressure A2 of 20 Pa or higher is sufficient to prevent mist from flowing out of cup 3. In the above reference example, the exhaust pressure A2 was set to 20 Pa to prevent mist from flowing out of cup 3 during drying.

[0079] However, as in Figure 8 As described in Experiment 2, the higher the exhaust pressure A2, the less effective it is at reducing the thickness of the resist film R1 at the periphery of wafer W. Therefore, there is a risk that the film thickness at the periphery of wafer W, when processed with a relatively low rotation speed B4, will be greater than that at the center. If the exhaust pressure A2 is set to a value lower than 20 Pa, such as 10 Pa, to suppress this increase in film thickness at the periphery relative to the center, there is a risk of fog flowing out of cup 3 when processing wafer W at a rotation speed B4 greater than 2000 rpm.

[0080] Therefore, as a first embodiment, unlike the reference example, the exhaust pressure A2 is set to a value corresponding to the rotational speed B4. More specifically, before processing the wafer W, the exhaust pressure A2 is determined based on the rotational speed B4, and the operation of the damper 47 is controlled to make the exhaust pressure A2 a predetermined (set) value. As a summary of the above-described setting of the exhaust pressure A2, it is set to a relatively low value within the range that prevents mist from flowing out of the cup 3, thereby suppressing the increase in the thickness of the resist film R1 at the periphery of the wafer W. In order to set the exhaust pressure A2 in this way, for example, the correspondence between the rotational speed B4 and the exhaust pressure A2 is obtained from the results of Table 1 of Experiment 3, and the exhaust pressure A2 is set to an appropriate value based on this correspondence and the rotational speed B4. Therefore, in this first embodiment, when Figure 3 The changes in exhaust pressure during the implementation of a series of processing steps on wafer W, as illustrated in the timing diagram, may not be the same across wafers W.

[0081] Furthermore, the venting pressure A2 during the drying process between wafers W may vary, but as described in the explanation of the process in the reference example, during the periods before and after the drying process when the processing liquid is supplied to the wafers W (the period before time t5 and the period after time t6), it is necessary to prevent the large amount of mist generated by the supply of the processing liquid from flowing out of the cup 3. Moreover, if the venting pressure A2 is set high during the drying process as previously described, it will cause the film thickness at the periphery of the wafers W to increase. Therefore, in the process of this first embodiment, similarly to the process in the reference example, the venting pressure A2 during the drying process is set to be lower than the venting pressure A1 during the periods before and after the drying process to prevent mist from scattering out of the cup 3 and to prevent a decrease in the uniformity of the film thickness of the resist film R1 on the surface of the wafers W.

[0082] Figure 9 The timing diagram illustrates the processing steps of wafer W in this first embodiment, and... Figure 3 The timing diagram similarly illustrates the relationship between the change in the rotational speed of wafer W and the change in exhaust pressure. Except that the exhaust pressure A2 during drying is determined based on the rotational speed B4 and the correspondence between rotational speed B4 and exhaust pressure A2, the processing in the first embodiment is the same as that in the reference example.

[0083] For example, the aforementioned correspondence between rotational speed B4 and exhaust pressure A2 is stored in the memory constituting the control unit 100 and in the server connected to the control unit 100. This correspondence is sometimes referred to as correspondence 1 in the following description. Specifically, correspondence 1 is set as follows, for example.

[0084] With engine speed B4 > 2000 rpm, exhaust pressure A2 = 20 Pa.

[0085] With engine speed B4 ≤ 2000 rpm, exhaust pressure A2 = 10 Pa

[0086] The processing steps of wafer W in the first embodiment will now be described in detail. When the rotational speed B4 for processing any wafer W (designated as wafer W1) is set to a speed greater than 2000 rpm according to data received by the control unit 100 from the host computer, the control unit 100 determines the exhaust pressure A2 to be 20 Pa based on the rotational speed B4 and the aforementioned correspondence 1. Furthermore, when wafer W1 is transferred to the substrate processing apparatus 1 and held on the rotating holding disk 21, during times t1 to t5, as explained in the reference example, the pre-wetting and resist coating of wafer W1 progresses while the rotational speed of wafer W1 changes and the exhaust pressure is set to A1. During the subsequent drying period t5 to t6, wafer W1 rotates at a speed B4 greater than the 2000 rpm set above, and the drying of the resist film R1 progresses while the exhaust pressure is set to 20 Pa (determined as A2).

[0087] On the other hand, when the rotational speed B4 is set to 2000 rpm or less when processing any wafer W (let's call it wafer W2), the control unit 100 determines the exhaust pressure A2 to be 10 Pa based on the rotational speed B4 and the aforementioned correspondence. Furthermore, when wafer W2 is transferred to the substrate processing apparatus 1 and held on the rotating holding disk 21, during times t1 to t5, as explained in the reference example, while the rotational speed of wafer W1 changes and the exhaust pressure is set to A1, pre-wetting and resist coating of wafer W1 progress. During the subsequent drying period t5 to t6, wafer W2 rotates at a speed B4 set to 2000 rpm or less as described above, and the exhaust pressure A2 is set to 10 Pa, thus progressing in the drying of the resist film R1.

[0088] Wafer W1, processed at an exhaust pressure of A2 = 20 Pa, and wafer W2, processed at an exhaust pressure of A2 = 10 Pa, were both subjected to EBR processing and back-side cleaning at times t6 to t8, with varying rotational speed and exhaust pressure set to A1, and then dried. The processing was completed after this drying.

[0089] During the drying process of wafer W1, the relatively high rotational speed B4 suppresses the increase in the thickness of the resist film R1 at the periphery of wafer W1. Furthermore, the relatively high exhaust pressure A2 of 20 Pa prevents mist from flowing out of cup 3. During the drying process of wafer W2, the rotational speed B4 is lower than that used for wafer W1, but the exhaust pressure A2 is also lower. Therefore, the effect of this exhaust pressure A2 on reducing the film thickness at the periphery of wafer W2 is significant. Thus, for wafer W2, the increase in the thickness of the resist film R1 at the periphery is also suppressed. Because the rotational speed B4 is relatively low, even at this low exhaust pressure A2, mist flow out of cup 3 is also prevented. As described above, the processing according to the first embodiment can prevent fog from flowing out of the cup 3 and can suppress the increase in the thickness of the resist film R1 at the periphery of each wafer W, thereby forming a resist film R1 with high uniformity in thickness within the surface of the wafer W.

[0090] As the correspondence 1 used to determine the exhaust pressure A2, the results shown in Table 1 were obtained through Experiment 3. Therefore, based on these results, it was set as follows: "When the speed B4 > 2000 rpm, the exhaust pressure A2 = 20 Pa" and "When the speed B4 ≤ 2000 rpm, the exhaust pressure A2 = 10 Pa". If the experimental results differ from those in Table 1, correspondence 1 can be set according to those results. In this way, correspondence 1 is not limited to the illustrated relationship; it can be set appropriately according to the characteristics of each device. Furthermore, even if the results shown in Table 1 are obtained, correspondence 1 is not limited to being set as already explained. For example, according to Table 1, when the speed B4 ≤ 2000 rpm, the exhaust pressure A2 can be lower than 20 Pa and higher than 10 Pa; therefore, in this case, the exhaust pressure A2 can also be set to 15 Pa.

[0091] In addition, Figure 9 In the processing steps shown in the diagram, the exhaust pressure during the period before the drying period (times t1 to t5) and the exhaust pressure during the period after the drying period (times t6 to t8) are set to the same value, A1. However, the exhaust pressures during these periods can also be set to be different. Therefore, in terms of the exhaust volume within cup 3, the first exhaust volume C1 during times t1 to t5 and the third exhaust volume C3 during times t6 to t8 can also be different.

[0092] <Second Implementation Method>

[0093] The second embodiment will be described focusing on the differences from the first embodiment. In this second embodiment, similar to the first embodiment, after the wafer W has undergone processing steps from pre-wetting to back-side cleaning and EBR processing, and before the wafer W is dried by rotation, the cup 3 using the wafer W is cleaned. Figure 10 This is a timing diagram showing the relationship between the change in the rotational speed of wafer W and the change in the exhaust pressure during the processing of this second embodiment. After time t6 and before time t7, the ejection of cleaning fluid L2 from the back cleaning nozzle 41 is stopped, ending the back cleaning process of wafer W. Then, at time t7, the ejection of removal fluid from the removal fluid supply nozzle 61 is stopped, and the ejection of cleaning fluid L2 from the back cleaning nozzle 41 to the back of wafer W is restarted. At time t7, the rotational speed of wafer W becomes a predetermined rotational speed B6, and the exhaust pressure becomes a predetermined exhaust pressure A3. The cleaning process of cup 3 is started by restarting the ejection of cleaning fluid L2. Furthermore, the rotational speed B6 can be the same as, or greater than, or less than, the rotational speed B5 during times t6 to t7.

[0094] Figure 11 A longitudinal sectional side view of the substrate processing apparatus 1 during the cleaning process of cup 3 is shown. Cleaning fluid L2 supplied to the back side of the rotating wafer W is dispersed within cup 3, thereby being supplied to the resist R that is adhered to and cured within cup 3, causing the resist R to dissolve and be removed, thus cleaning the interior of cup 3. At time t7′, after a predetermined time has elapsed from time t7, the ejection of cleaning fluid L2 from the back cleaning nozzle 41 stops, and the cleaning process of cup 3 ends. At time t7′, for example, the rotational speed of wafer W becomes B1, and the exhaust pressure becomes A1. At time t8, after a predetermined time has elapsed from time t7′, the rotation of wafer W stops, and the processing of wafer W ends. Time t7′ to time t8, like time t7 to t8 in the first embodiment, is the period for drying wafer W.

[0095] The cleaning process of cup 3 will be further explained. During the explanation, the period from t7 to t7′ during the cleaning process of cup 3 will sometimes be referred to as the cup cleaning period. The height of the cleaning fluid L2 supplied to cup 3 that is more dispersed from wafer W varies depending on the rotational speed B6 of wafer W during the cup cleaning period. Specifically, for the region within cup 3 where the cleaning force is high due to the large amount of cleaning fluid L2 dispersed from wafer W (designated as the high-cleaning region), the higher the rotational speed B6, the closer this region is to the upper part of cup 3. That is, by changing the rotational speed B6, the height of the high-cleaning region can be changed.

[0096] Furthermore, at time t7 when the cleaning process of cup 3 begins, the height of the area within cup 3 where a relatively large amount of resist R adheres (designated as the high-contamination area) changes depending on the processing conditions prior to time t7. Specifically, for example, the viscosity and specific gravity of the resist may vary depending on the type of resist, thus the type of resist used in the processing of wafer W may differ (i.e., the resist supply nozzle 51 used may differ), thereby causing the height of the high-contamination area to change. Therefore, the rotational speed B6 of wafer W is set so that the aforementioned high-cleaning area includes the high-contamination area. For example, similar to rotational speed B4, this rotational speed B6 is set according to data sent from the host computer to the control unit 100.

[0097] Furthermore, in this second embodiment, before the processing of wafer W begins, in addition to automatically determining the exhaust pressure A2 based on the rotational speed B4 during drying, as in the first embodiment, the exhaust pressure A3 is also automatically determined based on the rotational speed B6 during cup rinsing. In this way, the opening of the damper 47 is adjusted during cup rinsing to achieve a pre-set (determined) exhaust pressure before processing begins. The exhaust pressure A3 is determined based on the pre-obtained correspondence between rotational speed B6 and exhaust pressure A3 (for convenience, let's call it correspondence 2), and is set to a relatively low value within a range that prevents mist from scattering outwards from cup 3.

[0098] Furthermore, during cup cleaning, regardless of the rotational speed B6, setting the exhaust pressure A3 to a relatively high value can prevent mist from escaping out of the cup 3. However, consistently setting the exhaust pressure A3 to a high value would waste the limited energy of the factory equipped with the substrate processing unit 1, and the exhaust volume of other various substrate processing units within the factory might be limited. Therefore, as described above, it is preferable to set the exhaust pressure A3 to a relatively low range within the range that prevents mist from escaping out of the cup 3.

[0099] The correspondence 2 between rotational speed B6 and exhaust pressure A3 is stored in the memory constituting the control unit 100 and the server connected to the control unit 100. Specifically, this correspondence 2 is, for example, the relationship described below. This correspondence 2 can also be set according to an experiment performed before the processing of the wafer W, similar to the correspondence 1 described in the first embodiment.

[0100] With engine speed B6 > 5000 rpm, exhaust pressure A3 = 80 Pa.

[0101] With engine speed B6 ≤ 5000 rpm, exhaust pressure A3 = 60 Pa

[0102] After the control unit 100 sets the rotation speed B6 during cup cleaning for processing any wafer W according to the data received from the host computer, the exhaust pressure A3 is determined based on the set rotation speed B6 and the aforementioned correspondence 2. Furthermore, during the processing of the wafer W... Figure 10 During the processing steps shown in the diagram, the rotation speed B6 is set to a certain value during cup cleaning, and the exhaust pressure A3 is set to a certain value, namely 80 Pa or 60 Pa, to make the processing proceed.

[0103] Furthermore, the process of setting the exhaust pressure to A3 during cup cleaning corresponds to the fourth step. Moreover, as mentioned above, the exhaust pressure A3 is 80 Pa or 60 Pa. Therefore, if the exhaust volume of cup 3 in the fourth step is set to a fourth exhaust volume C4, then the fourth exhaust volume C4 is an exhaust volume set within the range of the largest exhaust volume among the aforementioned first exhaust volume C1, second exhaust volume C2, and third exhaust volume C3 (i.e., the first exhaust volume C1 and the third exhaust volume C3). That is, the exhaust pressure A3 for the fourth step is set to be the same as or greater than the largest exhaust pressure in the first to third steps. This is because even if the exhaust pressure A3 in this fourth step is relatively high, it will not affect the thickness of the resist film R1, and since the wafer W rotates at a relatively high speed to disperse the cleaning solution L2, it is necessary to have a relatively high exhaust pressure A3 to reliably prevent mist from flowing out of cup 3.

[0104] Furthermore, as in Correspondence 2, the exhaust pressure A3 is set to 60 Pa when the rotational speed B6 ≤ 5000 rpm. However, this setting is not limited to this. As mentioned above, considering the plant's energy, the exhaust pressure when the rotational speed B6 ≤ 5000 rpm is only required to be lower than the exhaust pressure of 80 Pa when the rotational speed B6 > 5000 rpm. In addition, as mentioned above, the exhaust pressure A3 for the fourth step is set to be the same as or greater than the maximum exhaust pressure in the first to third steps, so it can be set to 60 Pa or more. Therefore, the exhaust pressure when the rotational speed B6 ≤ 5000 rpm is, for example, only lower than 80 Pa and higher than 60 Pa, or it can be set to a value higher than the previously described 60 Pa, specifically, for example, 70 Pa, to more reliably prevent mist from flowing out of the cup 3. Furthermore, Correspondence 2 is also not limited to the previously described example, as is Correspondence 1, and the value can be set appropriately according to the experiments conducted beforehand.

[0105] Furthermore, while the correspondence 2 was explained only as the relationship between rotational speed B6 and exhaust pressure A3, it is possible to set the processing conditions of wafer W before the cup cleaning period as the corresponding relationship between rotational speed B6 and exhaust pressure A3. Moreover, as the processing conditions of wafer W, specifically, it is possible to set the type of photoresist used in the processing of wafer W (i.e., the photoresist supply nozzle 51). This is because depending on the type of photoresist used, the specific gravity and viscosity differ, thus the height of the highly contaminated area changes, i.e., the value of the appropriate rotational speed B6 changes.

[0106] With correspondence 2 set up like this, the resist used on wafer W and the rotation speed B6 are set according to the data sent from the upper computer to the control unit 100. The exhaust pressure A3 is then determined and processed based on correspondence 2. In other words, the device structure can also determine the exhaust pressure A3 based on data related to the rotation speed B6 and the type of resist used.

[0107] Furthermore, the height of the highly contaminated area may change depending on the spin-coating speed B2 of the resist R. Therefore, the correspondence 2 can be described as the relationship between the processing conditions of wafer W, the spin-coating speed B6, and the exhaust pressure A3. However, the processing condition for wafer W could also be the spin-coating speed B2. That is, the spin-coating speeds B2 and B6 are set according to the data sent from the host computer to the control unit 100, and the exhaust pressure A3 is determined based on the correspondence 2 for processing. In other words, the device structure can also determine the exhaust pressure A3 based on each of the spin-coating speeds B2 and B6.

[0108] Furthermore, in the second embodiment, the exhaust pressure A2 during drying is changed based on correspondence 1, similar to the first embodiment. However, it is also possible to fix the exhaust pressure A2 between wafers W without changing the exhaust pressure A2 based on correspondence 1, similar to the processing in the reference example. Additionally, in the first and second embodiments, it is described that the host computer sets the rotation speeds B4 and B6. However, for example, the rotation speeds B4 and B6 can also be set by the user of the device before the processing of wafer W begins. The exhaust pressures A2 and A3 can also be determined based on correspondences 1 and 2 through the user's settings.

[0109] [Examples of variations of the cup]

[0110] Next, refer to respectively Figure 12 , Figure 13 The substrate processing apparatus 1A is illustrated using longitudinal sectional side views and top views. Furthermore, in this… Figure 13In the subsequent top views of the substrate processing apparatus, to avoid complicating the diagrams, the intermediate member 48 near the wafer W is omitted. Furthermore, for easy visual identification in the diagrams, the resist film R1 on the surface of the wafer W is indicated by shading. Therefore, the shading line on the surface of the wafer W does not represent a cross-section.

[0111] The substrate processing apparatus 1A includes a cup 3A, which is a variation of the cup 3, in place of the cup 3. Otherwise, it is configured the same as the substrate processing apparatus 1, and is configured to perform the processes described in the first embodiment and / or the second embodiment. Furthermore, the cup 3A can also be subjected to the same process as the cleaning process described for the cup 3, so the process of the second embodiment can also be implemented in that manner.

[0112] The structure of cup 3A differs from that of cup 3 in terms of the opening. As described above, the circular opening 34C of cup 3 is relatively large. Furthermore, during the EBR process, the removal liquid L1 is sprayed onto the periphery of the wafer W, i.e., closer to the opening edge of cup 3. Therefore, during this EBR process, the removal liquid sprayed from the nozzle splashes off the wafer W, which may cause splashing of the removal liquid as a stream or droplets outside cup 3. Cup 3A is configured to reliably prevent this splashing.

[0113] The differences between cup 3A and cup 3 will be explained. In cup 3A, only a portion of the front end of the upper wall portion 33, which forms the circular opening 34C described in cup 3, protrudes obliquely upward toward the center side of cup 3A (i.e., the center side of opening 34C). This protruding portion constitutes a liquid-receiving portion 71 as an inclined plate. When viewed from the side, this liquid-receiving portion 71 extends toward the center side of cup 3A in a manner parallel to the elongation direction of the upper wall portion 33, and when viewed from above, it is located adjacent to the upper protrusion 34A and the lower protrusion 34B of the outer cup 31. As described above, the liquid-receiving portion 71 is arranged in such a way that it closes a portion of the periphery of the circular opening 34C of cup 3 when viewed from above. The opening of cup 3A that is partially closed in this way is referred to as opening 34D.

[0114] Figure 14 This is a longitudinal sectional side view of the substrate processing apparatus 1A during EBR processing. Figure 14 As shown, the first liquid-receiving section 71 receives the removal liquid L1 ejected from the removal liquid supply nozzle 61 and splashed from the wafer W during EBR processing, thereby preventing splashing, i.e., the removal liquid L1 scattering outside the cup 3A. As described above, the liquid-receiving section 71 is formed in such a way that it only closes a portion of the periphery of the circular opening 34C formed by the cup 3, thereby suppressing the increase in airflow velocity near the periphery of the wafer W during processing, just like the cup 3. That is, in this cup 3A, it is also possible to suppress the deviation in the thickness of the resist film R1 within the surface of the wafer W.

[0115] The structure of the liquid-receiving part 71 will be described in further detail. For example... Figure 13 As shown, the liquid-receiving portion 71 is a wide arc shape when viewed from above, and its length along the circumference of the cup 3A increases towards the periphery of the cup 3A. The collision position of the remover liquid L1 ejected from the remover supply nozzle 61 on the wafer W is designated as P. As described above, the liquid-receiving portion 71 is located near the collision position P for the purpose of catching the remover liquid L1 splashed from the wafer W. The liquid-receiving portion 71 is arranged such that, when viewed from above, a portion of the liquid-receiving portion 71 is located on an extension line P1 (indicated by a dashed line) extending from the collision position P along the ejection direction of the remover liquid L1 ejected from the remover supply nozzle 61.

[0116] As shown by the dotted line in the figure, the removal liquid L1 ejected from the removal liquid supply nozzle 61 splashes out in a manner that diffuses towards the periphery of the cup 3A from the impact position P when viewed from above. In order to reliably receive the removal liquid L1 that diffuses in this way, the liquid receiving part 71 is formed as described above such that its length along the circumference of the cup 3A increases as it moves towards the periphery of the cup 3A when viewed from above.

[0117] Furthermore, in order to suppress the airflow velocity at the periphery of the wafer W during processing, as described above, the length of the liquid-receiving portion 71 in the circumferential direction of the opening 34D of the cup 3A is relatively short. Specifically, for example, when viewed from above, if the length of the periphery of the opening 34D (i.e., the length of the periphery of the opening 34C) without the liquid-receiving portion 71 is set to N, then a portion of the upper wall portion 33 of the cup 3A with a length of N / 6 or less protrudes toward the center of the cup 3A, thereby forming the liquid-receiving portion 71. In other words, if the circumferential length of the liquid-receiving portion 71 along the periphery side of the cup 3A is set to N1 (refer to...) Figure 13 If ), then N1≤N / 6.

[0118] [Other structural examples of the liquid-receiving part]

[0119] Next, refer to respectively Figure 15 , Figure 16 The substrate processing apparatus 1B will be described using a top view and a longitudinal sectional side view. The substrate processing apparatus 1B includes a cup 3 and is configured to perform the processes described in the first and second embodiments. Except for having a sub-processing unit 6A, which replaces the sub-processing unit 6, as a mechanism for performing EBR processing, it is configured similarly to the substrate processing apparatus 1. A liquid-receiving portion 72 is provided in the substrate processing apparatus 1B. This liquid-receiving portion 72, like the liquid-receiving portion 71 of the cup 3A, is used to receive the removal liquid L1 splashed from the wafer W and prevent it from scattering outside the cup 3. The liquid-receiving portion 72, as a second liquid-receiving portion, is provided in the sub-processing unit 6A and moves together with the removal liquid supply nozzle 61 via a moving mechanism 66 provided in the sub-processing unit 6A.

[0120] Regarding the sub-processing unit 6A, a detailed description will be provided focusing on its differences from the sub-processing unit 6. The liquid-receiving unit 72, like the liquid-receiving unit 71, is configured as a wide, arc-shaped plate when viewed from above. However, in the illustrated example, the liquid-receiving unit 72 is formed such that its radial length along the opening 34C is greater than that of the liquid-receiving unit 71 along the opening 34C. Furthermore, the liquid-receiving unit 72 is horizontally supported, for example, by a support member 73 provided on the arm 65.

[0121] Figure 15 , Figure 16 The substrate processing apparatus 1B is shown during the EBR process. During EBR processing (i.e., when the remover L1 is ejected from the remover supply nozzle 61), the liquid receiving portion 72, like the liquid receiving portion 71, is located near the collision position P where the remover L1 collides with the wafer W. At this time, the liquid receiving portion 72, when viewed from above, covers a portion of the periphery of the opening 34C of the cup 3, and, like the aforementioned liquid receiving portion 71, is located on an extension line P1 extending from the collision position P along the ejection direction of the remover L1 ejected from the remover supply nozzle 61. Figure 15 The extension line P1 is omitted from the text. Below, the positions of the removal fluid supply nozzle 61 and the fluid receiving section 72 during this EBR treatment will sometimes be described as the treatment positions.

[0122] like Figure 15 As shown, when viewing the liquid-receiving portion 72 in the processing position from above, the portion near the center of the cup 3 overlaps with the peripheral end of the wafer W, and the portion near the peripheral edge of the cup 3 overlaps with the upper wall portion 33 of the cup 3. Furthermore, by configuring the liquid-receiving portion 72 in this way, the aforementioned splashing can be suppressed more reliably. Additionally, when viewed from the side, the lower surface of the liquid-receiving portion 72 in this processing position is close to the upper protrusion 34A of the upper wall portion 33.

[0123] Furthermore, while the liquid removal supply nozzle 61 is waiting in a state where it is housed within the opening of the standby section 68, the liquid receiving section 72 is located above the standby section 68 and waits, and when viewed from above, the liquid receiving section 72 does not overlap with the opening 34C of the cup 3. Figure 17 , Figure 18 The top view and longitudinal sectional side view of the substrate processing apparatus 1B in standby mode are shown, respectively, of the removal liquid supply nozzle 61 and the liquid receiving part 72. In the following text, the position in which the removal liquid supply nozzle 61 and the liquid receiving part 72 are in standby mode will sometimes be described as the standby position.

[0124] A nozzle 74 is provided inside the opening of the standby section 68, and a cleaning fluid, such as pure water, is supplied to the nozzle 74 from the cleaning fluid supply mechanism 75 as a cleaning fluid for the liquid receiving section 72. Furthermore, the cleaning fluid supply mechanism 75, in addition to supplying pure water, is configured similarly to the processing fluid supply mechanism 42 and other similar mechanisms described previously. The nozzle 74 and the cleaning fluid supply mechanism 75 constitute a cleaning fluid supply unit for the liquid receiving section. The nozzle 74 sprays cleaning fluid from below toward the lower surface of the liquid receiving section 72 in the standby position, cleaning to remove droplets of removal fluid L1 adhering to the lower surface of the liquid receiving section 72. Figure 18 The cleaning fluid is indicated by a dashed arrow. Furthermore, a drain port 76 is provided in the standby section 68 for discharging the cleaning fluid sprayed from the nozzle 74 as shown.

[0125] Additionally, a nozzle 77 is provided inside the opening of the standby section 68, and an inactive gas, atmospheric gas, or similar gas is supplied to the nozzle 77 using a gas supply mechanism 78 equipped with a valve, etc. After the cleaning fluid is supplied from the nozzle 74 to the lower surface of the liquid-receiving section 72 in the standby position, gas is supplied from the nozzle 77 to the lower surface of the liquid-receiving section 72 in the standby position to dry the lower surface. The cleaning and drying of the lower surface of the liquid-receiving section 72 is performed to prevent the removal fluid L1 adhering to the lower surface of the liquid-receiving section 72, and the cleaning fluid used to remove the removal fluid L1, from falling onto the wafer W during the processing of the wafer W.

[0126] By configuring the substrate processing apparatus 1B as described above, in Figure 9 or Figure 10 The diagram shows that at times t6 to t7, the removal liquid supply nozzle 61 and the liquid receiving part 72 are located at... Figure 15 and Figure 16 EBR processing is performed on wafer W (pre-processed wafer W) in the states shown at each processing position. Furthermore, after EBR processing of the pre-processed wafer W, the remover supply nozzle 61 and the liquid receiving portion 72 move from their respective processing positions to... Figure 17 and Figure 18 Reach the indicated standby position and wait.

[0127] After cleaning fluid is supplied from nozzle 74 to the lower surface of the liquid receiving portion 72 in the standby position to remove the removal fluid that adhered to the lower surface of the liquid receiving portion 72 during the EBR process, gas is then supplied from nozzle 77 to dry the lower surface. Subsequently, when a subsequent wafer W is transferred into cup 3, at time t6~t7 during the processing of that subsequent wafer W, the removal fluid supply nozzle 61 and the liquid receiving portion 72 are again in their respective processing positions for EBR processing.

[0128] As described above, when the liquid-receiving portion 72 is configured to move together with the removal liquid supply nozzle 61 via the moving mechanism 66, it is possible to retract the liquid-receiving portion 72 to a position that does not overlap with the opening 34C of the cup 3 after EBR processing. Therefore, when the wafer W is being loaded into and unloaded from the cup 3, the liquid-receiving portion 72 will not interfere with the wafer W, thus allowing for a larger radial size of the liquid-receiving portion 72 when viewed from above. Consequently, the aforementioned splashing can be suppressed more reliably, which is preferable.

[0129] Furthermore, since the liquid-receiving portion 72 moves together with the removal liquid supply nozzle 61, as long as the liquid-receiving portion 72 does not overlap with the opening of the cup 3 during drying, the thickness deviation of the resist film R1 on the surface of the wafer W will not increase due to the increased airflow velocity at the periphery of the wafer W. Therefore, the liquid-receiving portion 72, as... Figure 15 , Figure 16 As shown in the example, when in the processing position, only a portion of the periphery of the opening 34C is covered, but this is not limited to covering only a portion of the periphery; for example, it can also be formed into a ring shape to cover the entire periphery. However, to prevent the substrate processing apparatus 1B from becoming too large, it is preferable to configure the liquid receiving portion 72 to cover only a portion of the opening 34C. Alternatively, the liquid receiving portion 72 can be connected to an arm separate from the arm 65 that moves the solvent removal nozzle 61, and a moving mechanism separate from the moving mechanism 65 for moving the arm can be provided, allowing the liquid receiving portion 72 to move between the standby position and the processing position. In other words, the apparatus can also be configured such that a dedicated arm and a dedicated moving mechanism are provided for moving the liquid receiving portion 72, and the liquid receiving portion 72 can move independently of the removal liquid supply nozzle 61.

[0130] The configuration of the liquid-receiving portions 71 and 72 can be appropriately modified. For example, it is shown that the liquid-receiving portion 71 is inclined and the liquid-receiving portion 72 is horizontal, but the liquid-receiving portion 71 can also be horizontally positioned, and the liquid-receiving portion 72 can also be horizontally positioned. In addition, the liquid-receiving portion 71 is not limited to the height position shown in the previous illustration; for example, it can extend towards the center of the cup 3A from the height position where the upper protrusion 34A and the lower protrusion 34B are provided. Furthermore, the shape of the liquid-receiving portions 71 and 72 is not limited to being arc-shaped when viewed from above, and can be appropriately modified relative to the above example.

[0131] Furthermore, an example is shown of supplying a photoresist as a coating solution to form a photoresist film as a coating film, but the coating solution is not limited to a photoresist. For example, a solution used to form an antireflective film can be supplied as a coating solution to wafer W to form an antireflective film; a solution used to form an insulating film can be supplied as a coating solution to wafer W to form an insulating film; and a solution containing organic matter other than a photoresist can be supplied as a coating solution to wafer W to form an organic film. This technology can also be applied when forming these antireflective films, insulating films, and organic films as coating films.

[0132] In each embodiment, both EBR processing and backside cleaning are performed at processing times t6 to t7, but only one of them may be performed. Therefore, the substrate processing apparatus may only include either a removal liquid supply unit or a cleaning liquid supply unit.

[0133] Furthermore, in each embodiment, the substrate to be processed is not limited to a wafer; for example, it can be a substrate for manufacturing a flat panel display or a mask substrate for manufacturing an exposure mask. Therefore, square substrates can also be processed. It should be considered that the embodiments disclosed herein are illustrative in all respects and not restrictive. The above embodiments can also be omitted, substituted, modified, and combined in various ways without departing from the appended claims and their spirit.

[0134] Explanation of reference numerals in the attached figures

[0135] R: Resist; R1: Resist film; W: Wafer; 1: Substrate processing apparatus; 21: Rotary holding disk; 3: Cup; 41: Backside cleaning nozzle; 51: Resist supply nozzle; 61: Removal liquid supply nozzle; 100: Control unit.

Claims

1. A substrate processing apparatus comprising: A cup containing a base plate, the interior of which is vented; A rotating retaining part is used to hold the substrate within the cup and rotate the substrate. A coating liquid supply unit supplies coating liquid to form a coating film on the surface of the substrate; At least one of a removal liquid supply unit and a cleaning liquid supply unit, wherein the removal liquid supply unit supplies removal liquid to the peripheral portion of the substrate on which the coating film is formed and rotated, for removing the coating film, and the cleaning liquid supply unit supplies cleaning liquid to the substrate on which the coating film is formed and rotated, for cleaning the back side of the substrate. The exhaust volume adjustment unit adjusts the exhaust volume inside the cup; and The control unit performs a first step of venting the cup with a first venting volume when the coating liquid is supplied to the substrate, a second step of venting the cup with a second venting volume after the coating liquid is supplied to the substrate and before the removal liquid or the cleaning liquid is supplied to the substrate, and a third step of venting the cup with a third venting volume when the removal liquid or the cleaning liquid is supplied to the substrate. The control unit outputs a control signal to make the second venting volume less than the first venting volume and the third venting volume.

2. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus is provided with a removal liquid supply unit and a cleaning liquid supply unit. In the second step, before supplying the removal liquid and the cleaning liquid to the substrate, the inside of the cup is vented at a second venting rate. In the third step, the cup is vented at a third venting rate while the removal liquid and the cleaning liquid are supplied to the substrate.

3. The substrate processing apparatus according to claim 1, wherein, The control unit controls the operation of the exhaust volume adjustment unit according to the rotational speed of the substrate set in the second step.

4. The substrate processing apparatus according to claim 3, wherein, The cup is connected to an exhaust path, and gas flows from the cup into the exhaust path. The substrate processing apparatus is provided with a pressure detection unit that detects the pressure in the exhaust path. The opening of the exhaust path in the second step is adjusted using the exhaust volume adjustment unit so that the pressure detected by the pressure detection unit becomes a preset pressure.

5. The substrate processing apparatus according to claim 4, wherein, When the rotational speed of the substrate in the second step is 2000 rpm or more, the opening of the exhaust path is adjusted so that the pressure detected by the pressure detection unit is 20 Pa or more. When the rotational speed of the substrate in the second step is less than 2000 rpm, the opening of the exhaust path is adjusted so that the pressure detected by the pressure detection unit is less than 20 Pa and more than 10 Pa.

6. The substrate processing apparatus according to claim 2, wherein, In order to clean the cup using the cleaning fluid that scatters from the rotating substrate after the third step, the control unit outputs the control signal to perform a fourth step of venting the cup with a fourth venting volume when only the removal fluid and the cleaning fluid in the cleaning fluid are supplied to the substrate. The control unit controls the operation of the exhaust volume adjustment unit according to the rotational speed of the substrate set in the fourth step.

7. The substrate processing apparatus according to claim 6, wherein, The fourth exhaust volume is set according to the rotational speed of the substrate in the fourth step, within the range of the highest exhaust volume among the first, second, and third exhaust volumes.

8. The substrate processing apparatus according to claim 7, wherein, The cup is connected to an exhaust path, and gas flows from the cup into the exhaust path. The substrate processing apparatus is provided with a pressure detection unit that detects the pressure in the exhaust path. The opening of the exhaust path in the fourth step is adjusted using the exhaust volume adjustment unit so that the pressure detected by the pressure detection unit becomes a preset pressure.

9. The substrate processing apparatus according to claim 8, wherein, If the rotational speed of the substrate in the fourth step is 5000 rpm or higher, the opening of the exhaust path is adjusted so that the pressure detected by the pressure detection unit is 80 Pa or higher. If the rotational speed of the substrate in the fourth step is less than 5000 rpm, the opening of the exhaust path is adjusted so that the pressure detected by the pressure detection unit is less than 80 Pa and more than 60 Pa.

10. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus is provided with the removal liquid supply unit. The cup has a first liquid-receiving portion, which is formed by a portion of the periphery of the circular opening of the cup protruding toward the center of the cup, for receiving the removal liquid splashed from the substrate.

11. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus is provided with a removal liquid supply unit, which includes a nozzle for supplying the removal liquid to the substrate. The substrate processing apparatus is provided with a second liquid receiving section for receiving the removal liquid splashed from the substrate and a moving mechanism for moving the nozzle relative to the cup. When the removal liquid is supplied from the nozzle to the substrate, the second liquid receiving portion covers the periphery of the opening of the cup when viewed from above.

12. The substrate processing apparatus according to claim 11, wherein, When the removal liquid is supplied from the nozzle to the substrate, the second liquid receiving portion covers only a portion of the periphery of the opening of the cup when viewed from above.

13. The substrate processing apparatus according to claim 11, wherein, The substrate processing apparatus is provided with a standby section for the nozzle to wait on the outside of the cup. The standby unit includes a cleaning fluid supply unit for the liquid receiving unit. The cleaning fluid supply unit for the liquid receiving unit supplies cleaning fluid for the liquid receiving unit to the second liquid receiving unit for cleaning while the nozzle is waiting in the standby unit.

14. A substrate processing method, comprising the following steps: Vent the air from the inside of the cup containing the substrate; The substrate is held within the cup by a rotating retainer and the substrate is rotated. A coating film is formed on the surface of the substrate by supplying coating liquid through a coating liquid supply unit; The substrate on which the coating film is formed and is rotated is subjected to at least one of the following processes: a process in which a removal liquid is supplied to the periphery of the substrate by a removal liquid supply unit to remove the coating film, and a process in which a cleaning liquid is supplied to the back side of the substrate by a cleaning liquid supply unit. The amount of air discharged inside the cup is adjusted using the air discharge adjustment unit; A first step of venting the cup with a first venting rate when supplying the coating liquid to the substrate; A second step of venting the cup with a second venting volume after the coating liquid is supplied to the substrate and before the removal liquid or the cleaning liquid is supplied to the substrate; as well as The third step involves venting the contents of the cup at a third venting rate while supplying the removal liquid or the cleaning liquid to the substrate. Wherein, the second exhaust volume is less than the first exhaust volume and the third exhaust volume.

15. The substrate processing method according to claim 14, wherein, The process also includes the following steps: supplying a removal liquid for removing the coating film to the periphery of the substrate, which has the coating film formed on it and is rotated, using a removal liquid supply unit; and supplying a cleaning liquid for cleaning the back side of the substrate using a cleaning liquid supply unit. The second step is a step of venting the cup with a second venting rate before supplying the removal liquid and the cleaning liquid to the substrate. The third step is to vent air from the cup at a third venting rate when supplying the removal liquid and the cleaning liquid to the substrate.

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