Display device and electronic equipment

Abstract

A display device with high light extraction efficiency is provided. In the display device, a convex lens is included on a light emitting element, a second layer is provided on the convex lens in contact therewith, and a first layer is provided on the second layer in contact therewith. In this structure, by providing steps in which the refractive index is sequentially made smaller in the advancing direction of light, the refractive index steps at each interface can be reduced, and reflection at the interface can be reduced. Thus, the light extraction efficiency of the display device can be improved.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one aspect of the present invention is not limited to the aforementioned technical fields. The technical field of one aspect of the invention disclosed in this specification relates to an object, method, or manufacturing method. Furthermore, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods of operating these devices, or methods of manufacturing these devices.

[0003] Note that in this specification, etc., a semiconductor device refers to any device capable of operating by utilizing the characteristics of semiconductors. A transistor and a semiconductor circuit are types of semiconductor devices. Additionally, storage devices, display devices, imaging devices, and electronic devices sometimes include semiconductor devices. Background Technology

[0004] As electronic devices applied to XR (a general term for virtual reality (VR), augmented reality (AR), or mixed reality (MR), goggle-type devices and eyeglass-type devices have been developed.

[0005] Furthermore, typical examples of display panels that can be applied to these electronic devices include display devices with liquid crystal elements, display devices with organic EL (Electro Luminescence) elements, or light-emitting diodes (LEDs).

[0006] Since display devices that include organic EL elements do not require a backlight as needed for liquid crystal displays, they can achieve thin, lightweight, high-contrast, and low-power display devices. For example, Patent Document 1 discloses an example of a display device using organic EL elements.

[0007] [Preliminary Technology Documents]

[0008] [Patent Literature]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2018-107444 Summary of the Invention

[0010] Technical problems to be solved by the invention

[0011] Since reflection and refraction optical systems for VR devices and the like utilize selective reflection of polarized light and the like, the utilization efficiency of light is insufficient. In addition, AR devices are required to have high visibility of display even under strong external light intensity. Therefore, XR devices need to use a display device with increased brightness. Increasing the brightness of the display device leads to an increase in power consumption and a decrease in the reliability of the display device. Therefore, a display device with high light extraction efficiency is required.

[0012] In addition, goggle-type devices are devices worn on the body, and in order to reduce the burden on the body, goggle-type devices are preferably small and lightweight.

[0013] In view of this, one of the purposes of one aspect of the present invention is to provide a display device with high light extraction efficiency. In addition, one of the purposes of one aspect of the present invention is to provide a display device with high color rendering performance. In addition, one of the purposes of one aspect of the present invention is to provide a display device with low power consumption. In addition, one of the purposes of one aspect of the present invention is to provide a display device with simplified manufacturing processes. In addition, one of the purposes of one aspect of the present invention is to provide an electronic device including the display device. In addition, one of the purposes of one aspect of the present invention is to provide a small and lightweight electronic device. In addition, one of the purposes of one aspect of the present invention is to provide a novel electronic device.

[0014] Note that the description of these purposes does not preclude the existence of other purposes. Note that one aspect of the present invention does not need to achieve all of the above purposes. Note that purposes other than the above can be known and extracted from the descriptions in the specification, drawings, claims, and the like.

[0015] Means for solving the technical problems

[0016] One aspect of the present invention relates to a display device with high light extraction efficiency.

[0017] One aspect of the present invention is a display device including: a convex lens provided on a light-emitting element; a second layer provided on the convex lens in contact therewith; and a first layer provided on the second layer in contact therewith, wherein when the refractive index of the first layer is n1, the refractive index of the second layer is n2, and the refractive index of the convex lens is n3, n1 < n2 < n3 is satisfied, and the convex lens is provided in a paired manner with the light-emitting element.

[0018] The light-emitting element can emit red light, green light, or blue light.

[0019] Another aspect of the present invention is a display device, comprising: a convex lens disposed on a light-emitting element; a second layer disposed on the convex lens in contact therewith; and a first layer disposed on the second layer in contact therewith, wherein when the refractive index of the first layer is n1, the refractive index of the second layer is n2, and the refractive index of the convex lens is n3, n1 < n2 < n3 is satisfied, and the convex lens is provided for each of a plurality of light-emitting elements.

[0020] The light-emitting element can emit white light, and a coloring layer may be included between the light-emitting element and the convex lens. The light-emitting element has a structure in which an organic layer is sandwiched between a pixel electrode and a common electrode, the common electrode is an electrode shared by a plurality of light-emitting elements, and the common electrode and the convex lens have the same outer shape in a top view.

[0021] The above display device further includes a first wiring, wherein the first wiring may be connected to the common electrode in a region overlapping with the convex lens.

[0022] The above display device further includes adjacent first pixels and second pixels, wherein the first pixels and the second pixels may both include light-emitting elements, the emission color of the first pixels may be different from that of the second pixels, and a gap surrounded by the second layer or a gap surrounded by the second layer and the first layer may be provided between the first pixels and the second pixels.

[0023] The light-emitting element is preferably an organic EL element.

[0024] The second layer may be formed of an inorganic material. Alternatively, the second layer may be formed of an organic material.

[0025] An electronic device having the above display device as a light source and provided with a reflection and refraction optical system on the display surface side of the display device is also an aspect of the present invention. In addition, an electronic device provided with a touch sensor on the opposite side of the display surface of the display device is also an aspect of the present invention.

[0026] Advantages of the Invention

[0027] According to one aspect of the present invention, a display device with high light extraction efficiency can be provided. In addition, according to one aspect of the present invention, a display device with high color rendering performance can be provided. Further, according to one aspect of the present invention, a display device with low power consumption can be provided. In addition, according to one aspect of the present invention, a display device with simplified manufacturing processes can be provided. Moreover, according to one aspect of the present invention, an electronic device including the display device can be provided. In addition, according to one aspect of the present invention, a small and lightweight electronic device can be provided. Furthermore, according to one aspect of the present invention, a novel electronic device can be provided.

[0028] Note that the description of these effects does not preclude the existence of other effects. One aspect of the invention does not necessarily require all of the aforementioned effects. Effects other than those described above can be extracted from the specification, drawings, and claims.

[0029] Brief description of the attached figures

[0030] Figure 1 This is a diagram illustrating the display section of a display device.

[0031] Figures 2A to 2C This is a diagram illustrating the display section of a display device.

[0032] Figure 3 This is a diagram illustrating the display section of a display device.

[0033] Figures 4A to 4C This is a diagram illustrating the display section of a display device.

[0034] Figure 5A and Figure 5B This is a diagram illustrating the display section of a display device.

[0035] Figure 6A and Figure 6B This is a diagram illustrating the display section of a display device.

[0036] Figures 7A to 7C This is a diagram illustrating the display section of a display device.

[0037] Figures 8A to 8C This is a diagram illustrating the display section of a display device.

[0038] Figures 9A to 9E This is a diagram illustrating a display device.

[0039] Figures 10A to 10G This is a diagram illustrating an example of pixel structure.

[0040] Figure 11A and Figure 11B This is a diagram illustrating an eyeglass-type device.

[0041] Figures 12A to 12D This is a diagram illustrating an eyeglass-type device.

[0042] Figure 13A and Figure 13B This is a diagram illustrating an eyeglass-type device.

[0043] Figure 14A and Figure 14B This is a diagram illustrating an example of the structure of a display panel.

[0044] Figure 15 This is a diagram illustrating an example of the structure of a display panel.

[0045] Figure 16This is a diagram illustrating an example of the structure of a display panel.

[0046] Figure 17 This is a diagram illustrating an example of the structure of a display panel.

[0047] Figure 18 This is a diagram illustrating an example of the structure of a display panel.

[0048] Figure 19 This is a diagram illustrating an example of the structure of a display panel.

[0049] Figure 20 This is a diagram illustrating an example of the structure of a display panel.

[0050] Figure 21A and Figure 21B This is a diagram illustrating a transistor.

[0051] Figure 22 This is a diagram illustrating an example of the structure of a display panel.

[0052] Figures 23A to 23C This is a diagram illustrating an example of the structure of a display panel.

[0053] Methods of implementing the invention

[0054] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as limited only to the contents described in the embodiments shown below. Note that in the structure of the invention described below, the same reference numerals are used in different drawings to denote the same parts or parts having the same function, and repeated descriptions are omitted. Note that sometimes the shading of the same constituent elements is appropriately omitted or changed in different drawings.

[0055] Furthermore, even if something is considered a single element on a circuit diagram, it can be constructed using multiple elements if there are no functional problems. For example, multiple transistors used as switches can sometimes be connected in series or parallel. Additionally, capacitors are sometimes segmented and configured in multiple locations.

[0056] Furthermore, sometimes a single conductor serves multiple functions, such as wiring, electrodes, and terminals; therefore, multiple names may be used for the same element in this specification. Additionally, even when elements are shown as directly connected in a circuit diagram, they may actually be connected by more than one conductor; this configuration is also included in the scope of direct connections in this specification.

[0057] In this specification, "connection" includes, for example, "electrical connection." Note that sometimes "electrical connection" is used to describe the connection relationship of circuit elements as an object. Furthermore, "electrical connection" includes both "direct connection" and "indirect connection." "A and B directly connected" means that A and B are connected without any circuit elements (e.g., transistors, switches, etc. Note that wiring is not a circuit element). On the other hand, "A and B indirectly connected" means that A and B are connected through more than one circuit element.

[0058] For example, assuming a circuit including A and B is operating, if there are opportunities during circuit operation where electrical signals are exchanged or potentials interact between A and B, such a circuit can be defined as "A and B are indirectly connected". Furthermore, even if there are times during circuit operation where no electrical signals are exchanged or potentials interact between A and B, the opportunity where electrical signals are exchanged or potentials interact between A and B can still be defined as "A and B are indirectly connected".

[0059] An example of "A and B being indirectly connected" is a case where A and B are connected through the source and drain of more than one transistor. On the other hand, an example where "A and B being indirectly connected" cannot be said is a case where there is an insulator in the path from A to B. Specifically, this includes cases where a capacitor is connected between A and B, and cases where there is a gate insulating film of a transistor between A and B. Therefore, it cannot be said that "the gate (A) of a transistor is indirectly connected to the source or drain (B) of the transistor."

[0060] As another example where it cannot be said that "A and B are indirectly connected", there is the following situation: multiple transistors are connected through the source and drain along the path from A to B, and a fixed potential V is supplied from the power supply, GND, etc. to the nodes between the transistors and other transistors.

[0061] (Implementation Method 1)

[0062] This embodiment describes a display device and electronic device according to one aspect of the present invention.

[0063] One aspect of the present invention is a display device with high light extraction efficiency. The display device, as a display element, includes a light-emitting element (also called a light-emitting device), and a convex lens is included on the light-emitting element. Furthermore, a second layer is disposed on and in contact with the convex lens, and a first layer is disposed on and in contact with the second layer.

[0064] Here, when the refractive index of the material constituting the first layer is n1, the refractive index of the material constituting the second layer is n2, and the refractive index of the material constituting the convex lens is n3, n1 < n2 < n3 is satisfied. Thus, by providing steps in which the refractive index gradually decreases in the forward direction of light, the refractive index steps at each interface can be reduced, and thereby the reflection at the interface can be reduced.

[0065] In other words, the converging action of the convex lens can suppress the divergence of light, and the reflectance of each of the multiple reflecting surfaces can be reduced. Therefore, the light loss caused by divergence and reflection can be suppressed, and the light extraction efficiency of the display device can be improved. By this action, the voltage applied to the light-emitting element can also be suppressed, thereby improving the reliability of the light-emitting element and suppressing the power consumption of the light-emitting element. In addition, by using this display device, the visibility of XR devices and the like can be improved.

[0066] Figure 1 is a perspective view of a part of the display unit included in the display device according to one embodiment of the present invention, and also shows its cross section. In addition, Figure 2A is a top view of a part of the display unit, and for clarity, Figure 1 several of the shown components are omitted. In addition, Figure 2B is equivalent to Figure 2A a cross-sectional view of A1 - A2 shown in, and is a diagram for explaining the detailed structure of the sub-pixels.

[0067] Note that although Figure 1 and Figure 2A show a stripe arrangement, it is not limited thereto, and other arrangements can also be adopted in one embodiment of the present invention. For example, an S stripe arrangement, a Delta arrangement, a Bayer arrangement, a zigzag arrangement, a Pentile arrangement, a Diamond arrangement, etc. can also be adopted.

[0068] The pixel 40 includes a plurality of sub-pixels having different emission colors. For example, it may include a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light. By forming the pixel 40 from the sub-pixels R, G, and B, full-color display can be performed. Note that, for convenience, the sub-pixels are sometimes referred to as pixels.

[0069] As the display element included in the pixel 40, a light-emitting element is preferably used. By using a self-emitting type light-emitting element, a lightweight and thin display device that does not require a light source can be provided. Therefore, as a display device for XR devices and the like worn on the body, a display device using a light-emitting element is suitable.

[0070] As will be explained in detail later, the light-emitting element used in one aspect of the present invention preferably employs an MML (Metal Mask Less) structure, where the light-emitting layer is formed by photolithography without using an FMM (Fine Metal Mask). Compared to light-emitting elements manufactured using FMM, MML structure light-emitting elements can achieve a higher aperture ratio, thereby enabling high brightness or low power consumption light emission. One aspect of the present invention is a structure that combines an MML structure light-emitting element with a convex lens to further improve light extraction efficiency.

[0071] like Figure 1 and Figure 2B As shown, the light-emitting element 110 is disposed on the substrate 101. The substrate 101 includes, in addition to the support, elements constituting pixel circuits. The light-emitting element 110 includes an organic layer 112 serving as a light-emitting layer between the pixel electrode 111 and the common electrode 113. Figure 2A As shown, organic layer 112 can be provided in sub-pixel R to emit red light, organic layer 112G to emit green light in sub-pixel G, and organic layer 112B to emit blue light in sub-pixel B.

[0072] Pixel electrode 111 is used as an electrode of light-emitting element 110 and is connected to pixel circuitry disposed on substrate 101. For example, pixel electrode 111 can be used as the anode of light-emitting element 110.

[0073] The common electrode 113 is an electrode used by multiple light-emitting elements 110 and is used as another electrode of the light-emitting element 110, for example, it can be used as the cathode of the light-emitting element 110.

[0074] In addition, such as Figure 2C As shown, a common layer 114 can also be provided between the common electrode 113 and the organic layer 112. Furthermore, in Figure 1 and Figure 2B In the light-emitting element 110 shown, the organic layer 112 includes a layer equivalent to the common layer 114.

[0075] The common layer 114 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may be a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer.

[0076] A resin layer 126 is provided between adjacent light-emitting elements 110. The resin layer 126 insulates the organic layers 112 included in each of the adjacent light-emitting elements 110. Thereby, the leakage current passing through the organic layer 112 between the adjacent light-emitting elements 110 can be reduced, and thus the unwanted light emission caused by crosstalk can be suppressed. In addition, by providing the resin layer 126, the unevenness between the adjacent light-emitting elements 110 can be alleviated, whereby the coverage of the common electrode 113 is improved and disconnection can be prevented.

[0077] A light-transmissive protective layer 121 is provided on the light-emitting element 110, and a convex lens 127 is provided on the protective layer 121. A layer 128 is provided on the convex lens 127 in contact therewith. A layer 129 is provided on the layer 128 in contact therewith. The protective layer 121, the convex lens 127, the layer 128, and the layer 129 form a path for the light emitted by the light-emitting element 110, so it is preferably highly transmissive to visible light.

[0078] The protective layer 121 is preferably made of a material having a refractive index lower than that of the material of the convex lens 127. By making the refractive index of the protective layer 121 lower than the refractive index of the convex lens 127, total reflection can be prevented. The layer 128 is preferably made of a material having a refractive index lower than that of the material of the convex lens 127. The layer 129 is preferably made of a material having a refractive index lower than that of the material of the layer 128.

[0079] For example, from the viewpoint of ease of manufacturing process, the convex lens 127 is preferably made of resin. In addition, the protective layer 121 and the layer 128 are preferably inorganic films that can be formed by a vapor phase method. Or, they can also be organic films that can be formed by a liquid phase method. In addition, the layer 129 is preferably an adhesive (resin) of the substrate 102 for bonding the structure on the substrate 101 and the opposing substrate while flattening the structure on the substrate 101.

[0080] Figure 3 is an enlarged Figure 2B part of the figure and is a figure illustrating an example of an optical path. Here, the light L1 emitted from the light-emitting element 110 and diverging in an inclined direction in the convex lens 127 is described. Note that in the following description, at the same wavelength, the refractive index of the layer 129 is n1, the refractive index of the layer 128 is n2, and the refractive index of the convex lens 127 is n3.

[0081] When the light incident on the layer 128 from the convex lens 127 has n2 < n3, the refraction angle θ2 is larger than the incident angle θ1. Therefore, the light is refracted in the top surface direction at the interface between the convex lens 127 and the layer 128. In addition, when the light incident on the layer 129 from the layer 128 has n1 < n2, the refraction angle θ4 is larger than the incident angle θ3, so the light is further refracted in the top surface direction at the interface between the layer 128 and the layer 129.

[0082] That is, by setting n1 < n2 < n3, the light L1 that diverges and advances in the inclined direction in the convex lens 127 can be easily extracted to the outside, thereby improving the light extraction efficiency.

[0083] Note that when n1 < n2 < n3, total internal reflection may occur at each interface in the advancing direction of the light. However, since the refractive index step of each interface is relatively small, the critical angle C1 is relatively large. Here, considering the interface between the substrate 102 (for example, a glass substrate with n = 1.5 (visible light)) and air (n = 1 (visible light)) in the direction where the light penetrates to the outside, the refractive index step between the two is relatively large, so the critical angle C2 for total internal reflection is smaller than the critical angle C1.

[0084] In other words, since the critical angle C1 is larger than the critical angle C2, even the light that passes through without total internal reflection between the convex lens 127 and the layer 129 may sometimes undergo total internal reflection at the interface between the substrate 102 and air. Therefore, the total internal reflection at each interface in the case of n1 < n2 < n3 can be ignored.

[0085] Next, the direct-propagating light L2 that does not refract is described. According to the Fresnel formula, the reflectivity R1 of the interface between the convex lens 127 and the layer 128 is R1 = ((n3 - n2) / (n3 + n2)) 2 and the reflectivity R2 of the interface between the layer 128 and the layer 129 is R2 = ((n2 - n1) / (n2 + n1)) 2 .

[0086] Here, assuming that when n1 = 1.40, n2 = 1.45, and n3 = 1.55 which satisfy n1 < n2 < n3, the reflectivity R1 = 0.111% and the reflectivity R2 = 0.031%. For comparison, considering the case without the layer 128 (n2), the reflectivity R3 of the interface between the convex lens 127 and the layer 129 is R3 = ((n3 - n1) / (n3 + n1)) 2 so the reflectivity R3 = 0.259%.

[0087] That is, R1 + R2 becomes a value sufficiently smaller than R3. By satisfying n1 < n2 < n3 and setting a step where the refractive index decreases successively in the advancing direction of the light, the refractive index step of each interface can be reduced, and the reflection at the interface can be reduced. Therefore, it can be said that the light extraction efficiency can also be improved for the direct-propagating light.

[0088] Note that in this embodiment, an example of providing the layer 128 and the layer 129 on the convex lens 127 is shown. However, if a layer with a successively decreasing refractive index is further added on the layer 129, the above effect can be improved. That is, when the refractive index of the convex lens 127 is n xAnd when the refractive index of the layer in contact with the substrate 102 is n1, so that from n x Multiple layers can be formed between the convex lens 127 and the substrate 102 in a manner that the value of n1 decreases sequentially. Note that increasing the number of layers increases the number of processes and requires the selection of appropriate materials. Therefore, the number of layers formed between the convex lens 127 and the substrate 102 is 2 or more and 10 or less, preferably 2 or more and 5 or less.

[0089] Next, the detailed structure of the light-emitting element 110 and its vicinity will be described. Note that the description here uses... Figure 2C The structure shown is as follows.

[0090] Figure 4A Showing equivalent to Figure 2A The diagram shows a cross-section of A3-A4. The display device includes a red light-emitting element 110R, a green light-emitting element 110G, and a blue light-emitting element 110B.

[0091] As light-emitting elements 110R, 110G, and 110B, OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) are preferably used. In addition to organic compounds, inorganic compounds (such as quantum dot materials) can also be used as the light-emitting material contained in the light-emitting element.

[0092] Light-emitting element 110R includes a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. Light-emitting element 110G includes a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. Light-emitting element 110B includes a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. Light-emitting elements 110R, 110G, and 110B share the common layer 114 and the common electrode 113.

[0093] The organic layer 112R included in the light-emitting element 110R contains a light-emitting organic compound that emits at least red light. The organic layer 112G included in the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B included in the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. Organic layers 112R, 112G, and 112B may each be referred to as EL layers, and each includes at least a layer containing a light-emitting material (light-emitting layer).

[0094] Hereinafter, when describing the common elements among light-emitting elements 110R, 110G, and 110B, they will sometimes be referred to as light-emitting element 110. Similarly, when describing the common elements among components such as organic layers 112R, 112G, and 112B, which are distinguished by letters, symbols with omitted letters will sometimes be used.

[0095] The organic layer 112 and the common layer 114 may each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 includes a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer stacked sequentially from one side of the pixel electrode 111, and the common layer 114 includes an electron injection layer.

[0096] Pixel electrodes 111R, 111G, and 111B are all disposed in each light-emitting element. Furthermore, the common electrode 113 and the common layer 114 are a single layer shared by all light-emitting elements. One of the pixel electrodes and the common electrode 113 uses a conductive film that is transparent to visible light, while the other uses a reflective conductive film. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emitting type (bottom-emitting structure) display device can be realized; conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emitting type (top-emitting structure) display device can be realized. Additionally, by making both the pixel electrode and the common electrode 113 transparent, a double-sided emitting type (double-sided emitting structure) display device can also be realized.

[0097] A protective layer 121 is provided on the common electrode 113 to cover the light-emitting elements 110R, 110G, and 110B. The protective layer 121 has the function of preventing water and other impurities from diffusing from above to each light-emitting element.

[0098] The end of the pixel electrode 111 preferably has a tapered shape. When the end of the pixel electrode 111 has a tapered shape, the organic layer 112 disposed along the end of the pixel electrode 111 may also have an inclined portion. By making the end of the pixel electrode 111 tapered, the coverage of the organic layer 112 disposed across the end of the pixel electrode 111 can be improved. In addition, by making the side of the pixel electrode 111 tapered, foreign matter (e.g., dust or particles) from the manufacturing process can be easily removed by washing or other processes, which is therefore preferred.

[0099] Note that in this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a constituent element is inclined relative to the substrate surface. For example, it is preferable to have an area with an inclined side surface and a substrate surface (also referred to as a tapered angle) of less than 90°.

[0100] The organic layer 112 is processed into an island shape, for example, using a resist mask formed by photolithography. Therefore, the organic layer 112 has a shape at its ends where the angle between the top surface and the side surface is close to 90°. On the other hand, organic films formed using FMM (Fine Metal Mask) tend to have a thinner film thickness closer to the ends; for example, the top surface is formed in a slope shape in the range of 1 μm to 10 μm, making it difficult to distinguish between the top surface and the side surface.

[0101] An insulating layer 124, an insulating layer 125, and a resin layer 126 are provided between two adjacent light-emitting elements.

[0102] Between two adjacent light-emitting elements, the sides of each organic layer 112 are separated by a resin layer 126. The resin layer 126 is located between the two adjacent light-emitting elements and is disposed in such a way that it fills the ends of each organic layer 112 and the area between the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and a common layer 114 and a common electrode 113 are disposed to cover the top surface of the resin layer 126.

[0103] The resin layer 126 is used as a planarization film to fill the step between two adjacent light-emitting elements. By providing the resin layer 126, the common electrode 113 can be prevented from being insulated on the organic layer 112 due to the phenomenon of the step being broken at the end of the organic layer 112 (also known as disconnection).

[0104] As resin layer 126, an insulating layer containing organic materials can be suitable. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used as resin layer 126.

[0105] Alternatively, a photosensitive resin can be used as the resin layer 126. A photoresist can also be used as the photosensitive resin. The photosensitive resin can be either a positive or negative material.

[0106] The resin layer 126 may also contain materials that absorb visible light. For example, the resin layer 126 itself may be composed of materials that absorb visible light, and the resin layer 126 may also contain pigments that absorb visible light. As the resin layer 126, for example, resins that can be used as color filters that transmit red, blue, or green light and absorb other light; or resins that contain carbon black as pigments and are used as black matrices; etc.

[0107] By absorbing light emitted from the light-emitting element in an inclined direction through the resin layer 126, light leakage (stray light) from the light-emitting element through the resin layer 126 to adjacent light-emitting elements can be suppressed. Therefore, the display quality of the display device can be improved. In addition, the display quality can be improved even without using a polarizer in the display device, so it is possible to achieve a lighter and thinner display device.

[0108] The insulating layer 125 is in contact with the side surface of the organic layer 112. Additionally, the insulating layer 125 covers the upper end of the organic layer 112. Furthermore, a portion of the insulating layer 125 is in contact with the top surface of the substrate 101.

[0109] An insulating layer 125 is located between the resin layer 126 and the organic layer 112 and serves as a protective film to prevent the resin layer 126 from contacting the organic layer 112. When the organic layer 112 comes into contact with the resin layer 126, the organic layer 112 may be dissolved due to organic solvents or the like used in forming the resin layer 126. Therefore, by providing an insulating layer 125 between the organic layer 112 and the resin layer 126, the sides of the organic layer 112 can be protected.

[0110] The insulating layer 125 can be an insulating layer containing inorganic materials. Inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used as the insulating layer 125. The insulating layer 125 can be a single-layer structure or a multilayer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, by using inorganic insulating films such as alumina films, hafnium oxide films, silicon nitride films, and silicon oxide films formed by the ALD method as insulating layer 125, an insulating layer 125 with fewer pinholes and excellent protection of the EL layer can be formed.

[0111] In this specification, etc., "oxynitride" refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while "nitrogen oxide" refers to a material in which the nitrogen content is greater than the oxygen content in its composition. For example, when described as "silicon oxynitride", it refers to a material in which the oxygen content is greater than the nitrogen content in its composition, while when described as "silicon oxynitride", it refers to a material in which the nitrogen content is greater than the oxygen content in its composition.

[0112] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. The insulating layer 125 is preferably formed using the ALD method, which provides good coverage.

[0113] Alternatively, a reflective film (e.g., a metal film selected from one or more of silver, palladium, copper, titanium, and aluminum) can be provided between the insulating layer 125 and the resin layer 126 to reflect the light emitted by the light-emitting layer. This can further improve the light extraction efficiency.

[0114] The insulating layer 124 is a residual portion of a protective layer (also called a mask layer or sacrificial layer) used to protect the organic layer 112 during etching. The insulating layer 124 can be made of the same material as the aforementioned insulating layer 125. In particular, it is preferable that both the insulating layer 124 and the insulating layer 125 are made of the same material, thereby allowing the use of the same processing equipment.

[0115] In particular, inorganic insulating films such as alumina films, hafnium oxide films, silicon nitride films, and silicon oxide films formed by the ALD method have fewer pinholes, thus providing excellent protection for the EL layer. Therefore, they are suitable for use in insulating layers 125 and 124.

[0116] The protective layer 121 may, for example, have a single-layer structure or a multilayer structure comprising at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon oxynitride films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, semiconductor or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide may be used as the protective layer 121.

[0117] In addition, such as Figure 4C As shown, a laminated film of inorganic insulating film 121a and organic insulating film 121b can also be used as the protective layer 121. In this structure, the organic insulating film can be used as a planarization film. This makes the top surface of the organic insulating film flat, thus improving the coverage of the inorganic insulating film thereon and enhancing its barrier properties. Furthermore, the flattened top surface of the protective layer 121 reduces the influence of the uneven shape of the underlying structure when a structure (e.g., a color filter, a touch sensor electrode, or a lens array) is placed above the protective layer 121, which is preferable. Alternatively, the protective layer 121 can be composed solely of the organic insulating film 121b. Another option is to employ a structure in which an inorganic insulating film identical to the inorganic insulating film 121a is also placed on the organic insulating film 121b.

[0118] A convex lens 127 is provided on the protective layer 121 so as to overlap with the light-emitting element 110. In addition, a layer 128 and a layer 129 are provided on the convex lens 127. The convex lens 127 is also referred to as a microlens and is provided in a paired manner with the light-emitting element 110. In other words, one convex lens 127 is provided for one sub-pixel. Note that a plurality of microlenses arranged regularly like a pixel array may be referred to as a microlens array.

[0119] The convex lens 127 is provided above the light-emitting element 110 (in the light-emitting direction). Since the light emitted by the display device has a certain degree of spread, the light that cannot be extracted outside the display device becomes a loss. Therefore, the display device preferably increases the front luminance. Since the convex lens 127 has a convex lens shape, it can be made to operate in the direction of focusing light. In other words, since the divergence of the light emitted by the light-emitting element can be suppressed, the light extraction efficiency of the display device can be increased.

[0120] The convex lens 127 can be manufactured using the same material and the same process as the resin layer 126. In addition, as the material of the convex lens 127, a material having a relatively high refractive index is preferably used to improve the performance of the lens and expand the selection range of the layers 128 and 129 that satisfy n1 < n2 < n3 described above. Therefore, the refractive index n of visible light in the material that can be used for the resin layer 126 is preferably 1.50 or more, and more preferably 1.55 or more.

[0121] The layer 128 can be formed of an inorganic film or an organic film. Figure 4A An example of using an inorganic film deposited by a vapor phase method as the layer 128 is shown, and it is provided so as to have a substantially uniform thickness on the convex lens 127. In addition, Figure 4B An example of using an organic film deposited by a liquid phase method as the layer 128 is shown. On the formation surface of the layer 128, the convex portions are thinner and the concave portions are thicker. By forming such a shape, the layer 128 can also be used as a convex lens, and the light can be further refracted toward the top surface direction.

[0122] As the vapor phase method, for example, the same method as the formation method of the insulating layer 125 can be used. In addition, as the liquid phase method, for example, a spin coating method, a dip coating method, a spray coating method, etc. can be used.

[0123] The layer 128 is in Figure 4A and Figure 4BWhen the refractive index conditions described above are met in any of the layers, the light incident from the convex lens 127 can be refracted in the top surface direction. When layer 128 is an inorganic film, for example, silicon oxide (n=1.46), calcium fluoride (n=1.42), or a mixed layer of silicon oxide and aluminum oxide (n=1.42) can be used. Furthermore, when layer 128 is an organic film, the same material as resin layer 126 can be used, wherein the refractive index is smaller than that of the convex lens 127, preferably smaller than n=1.55, and more preferably smaller than n=1.50.

[0124] Layer 129 is an adhesive layer disposed between the substrate 102 and the substrate, and is preferably made of an organic material. For example, an optical adhesive or the like with a refractive index close to that of the glass or the like that can be used as the substrate 102 can be used. For example, the refractive index of this material is smaller than that of layer 128, preferably smaller than n=1.5, and more preferably smaller than n=1.45.

[0125] The above is an explanation of examples of light-emitting elements and their surrounding structures.

[0126] Figure 5A The 3D diagram shown is Figure 1 As a variation, a convex lens 127 can be used as a mask to process the organic layer 112 into island shapes. Furthermore, Figure 5B This is a top view illustrating various parts of the display section and wiring connection section. Furthermore, Figure 6A It is equivalent to Figure 5B The diagram shows the cross-section from B1 to B2. Additionally, Figure 6B It is equivalent to Figure 5B The diagram shows the cross-section from B5 to B6.

[0127] Note that, for clarity, in Figure 5B The components are shown with some parts omitted. Furthermore, the elements mentioned above are omitted. Figure 1 The description of the structurally repetitive constituent elements. Furthermore, in this specification, "island-like" refers to the state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like organic layer refers to a state in which the organic layer is physically separated from its adjacent organic layers.

[0128] exist Figure 1 In the structure shown, a photoresist mask formed by a photolithography process is used to fabricate the organic layer 112 into an island shape, but in Figure 5A In the structure shown, a convex lens 127 can be used instead of a photoresist mask. Therefore, the photolithography process can be reduced, and the manufacturing process can be simplified.

[0129] Note that in this structure, because the organic layer is processed simultaneously in multiple sub-pixels, it is difficult to coat the organic layer separately in a manner that ensures each sub-pixel emits a different color. Therefore, in this structure, as... Figure 6AAs shown, an organic layer 112W capable of emitting white light is preferably used, and a color layer 130 is disposed between the organic layer 112W and the convex lens 127 to achieve full-color display. Furthermore, this structure includes a process for simultaneously processing the organic layers comprising multiple sub-pixels, so the pixel arrangement is preferably a stripe arrangement.

[0130] exist Figure 1 In this structure, the common electrode (cathode) of the light-emitting element 110 can be placed in a large area, so there are no restrictions on the connection position of the wiring used to supply potential to the common electrode, and the connection between the two is relatively easy. On the other hand, in Figure 5A and Figure 5B In the structure shown, when the convex lens 127 is used as a mask to process the organic layer 112W, the common electrode 113 is also processed into an island shape, so special consideration needs to be given to the connection with the wiring 111c used to supply potential to the common electrode 113.

[0131] exist Figure 5A and Figure 5B In the structure shown, pixel electrodes 111 and wiring 111c with striped arrangement are first formed in the same process. Next, an organic layer capable of emitting white light is formed on the substrate 101 and the pixel electrodes 111. At this time, no organic layer is formed on the wiring 111c using a metal mask or the like. Note that the metal mask used here does not require the precise alignment of a high-precision metal mask. Alternatively, the organic layer on the wiring 111c can be removed using a stripping method or the like.

[0132] Next, a conductive film that will serve as a common electrode is formed on the substrate 101, the organic layer, and the wiring 111c. Since no organic layer is formed on the wiring 111c at this time, the conductive film can be connected to the wiring 111c. Next, a protective film and a coloring layer are formed on the conductive film. Here, the coloring layer is formed in a strip shape along the long side direction of the multiple sub-pixels.

[0133] Note that because it is a striped arrangement, as... Figure 5B As shown, in the short side direction of a sub-pixel, adjacent sub-pixels are selectively provided with coloring layers of different emission colors.

[0134] Next, a planarization film is formed on the color layer, and a cylindrical lens 127 with curved ends is formed on the planarization film. Here, the convex lens 127 is arranged to cover the pixel electrodes 111 of a plurality of sub-pixels arranged in the long side direction of the sub-pixels and to cover a portion of the wiring 111c.

[0135] Using the convex lens 127 as described above as a mask, a stack of planarization film, coloring layer, protective film, common electrode, and organic layer sequentially stacked from one side of the convex lens 127 is simultaneously processed into an island shape, thereby forming a stack of convex lens 127, planarization layer 122, coloring layer 130, protective layer 121, common electrode 113, and organic layer 112W. That is, when viewed from above, the convex lens 127, planarization layer 122, coloring layer 130, protective layer 121, and common electrode 113 have the same external shape.

[0136] Note that the protective layer 121 and the planarization layer 122 can be set as needed, or one or both of them can be omitted. In addition, the protective layer 121 and the planarization layer 122 can also have the functions of each other.

[0137] Thus, a convex lens 127 can be placed on multiple subpixels arranged along their long side, and the convex lens 127 can be used as a mask to process the organic layer. Furthermore, as... Figure 6B As shown, by setting a portion of the convex lens 127 in a manner that covers a portion of the wiring 111c, the connection with the wiring 111c is maintained even if the common electrode 113 is processed into an island shape.

[0138] Furthermore, a layer 128 is disposed on the substrate 101 and the convex lens 127, and a substrate 102 is disposed on the layer 128 through a layer 129. The effect of disposing of layers 128 and 129 is similar to... Figure 1 The structure shown is the same.

[0139] Figure 7A It is equivalent to Figure 5B The diagram shows a cross-section of B3-B4. Subpixel R is provided with a color layer 130R that allows red light to pass through. Subpixel G is provided with a color layer 130G that allows green light to pass through. Subpixel B is provided with a color layer 130B that allows blue light to pass through. Subpixels R, G, and B share other constituent elements.

[0140] Note that in Figure 1 In the structure shown, such as Figure 4A , Figure 4B The insulating layer 125 shown is provided on the side of the protective organic layer 112, but in Figure 7A In the structure shown, the sidewalls of the organic layer 112 are protected by layer 128. Therefore, layer 128 is preferably formed of a material that can be used in the insulating layer 125 with a refractive index less than that of the convex lens 127 and greater than that of layer 129.

[0141] In addition, when using inorganic materials to form layer 128, the coverage can be controlled according to the deposition conditions, such as... Figure 7BAs shown, voids V can be formed. Voids V are regions surrounded by layer 128 or regions surrounded by layers 128 and 129. Voids V are not limited to a vacuum state and can also contain atmospheric components, the components of the deposited gas when layer 128 is formed, the degassed components produced by layer 128, or the degassed components produced by layer 129.

[0142] In all cases, the refractive index of gap V is smaller than that of layer 128, thus light intruding into layer 128 between sub-pixels is easily totally reflected at the interface with gap V. Therefore, by setting gap V, color mixing between adjacent sub-pixels can be suppressed.

[0143] Note that even if Figure 7A Without gap V, when the refractive index of layer 128 is lower than that of the constituent elements in contact with layer 128, total internal reflection is likely to occur, similar to the conditions described above. Therefore, it can be said that by setting layer 128, color mixing between adjacent sub-pixels is less likely to occur.

[0144] Figure 7C An example of using an organic film as layer 128 is shown. When using a liquid phase method such as spin coating, the convex portion of layer 128 is thin and the concave portion is thick. By forming it in this shape, layer 128 can also be used as a convex lens, which can further refract light towards the top surface.

[0145] Figure 8A The 3D diagram shown is Figure 5A A modified example is shown, illustrating an application of one aspect of the invention to pixels arranged in an S-stripe pattern. Additionally, Figure 8A Show Figure 8B The cross section C1-C2 is shown. Figure 8B This is a top view illustrating each part of the display section and the wiring connection section. Figure 8C yes Figure 8B The cross-sectional view of C3-C4 is shown. The basic structure of the sub-pixel is... Figure 5A The structure shown is the same.

[0146] In this structure, a portion of the common electrode 113 is fabricated into a wiring pattern using a mask (wiring mask 131) formed through the same process as the convex lens 127. In this structure, as... Figure 8B , Figure 8C As shown, a portion of the wire-like region processed into the common electrode 113 is connected to the wire 111c, so this structure can be easily applied to arrangements other than stripe arrangements.

[0147] Note that in order to connect the common electrode 113 to the wiring 111c, the convex lens 127 and the wiring mask 131 need to be connected; however, if they were formed with the same thickness, the shape of the convex lens 127 would collapse. Therefore, it is preferable to form the wiring mask 131 thinner than the convex lens 127 so that the shape of the convex lens 127 does not collapse. In other words, a structure includes a region serving as the convex lens 127 and a region serving as the wiring mask 131, and the thickness of the region serving as the wiring mask 131 is preferably thinner than the thickness of the region serving as the convex lens 127.

[0148] As a method for forming a wiring mask 131 that is thinner than the convex lens 127, a photolithography method using a photosensitive resin and a multi-level grayscale mask can be cited. Alternatively, the photolithography process can be performed twice to form the convex lens 127 and the wiring mask 131 respectively.

[0149] Figure 9A This is a block diagram illustrating one aspect of a display device according to the present invention. The display device 20 includes a pixel array 74, circuitry 75, and circuitry 76. The pixel array 74 includes pixels 40 arranged in the column direction and the row direction.

[0150] Pixel 40 may include multiple sub-pixels 71. Sub-pixels 71 have the function of emitting light for display. By making the light emitted by sub-pixels 71 have colors such as R (red), G (green), and B (blue), full-color display can be performed.

[0151] Sub-pixel 71 includes a light-emitting device that emits unpolarized visible light. As the light-emitting device, EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) are preferably used. Examples of light-emitting materials included in the EL element include fluorescent materials, phosphorescent materials, materials exhibiting thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials, etc.). Furthermore, LEDs such as Micro LEDs can also be used as the light-emitting device.

[0152] Circuits 75 and 76 are driving circuits used to drive sub-pixel 71. Circuit 75 can be used as a source driving circuit, and circuit 76 can be used as a gate driving circuit. For example, shift register circuits can be used as circuits 75 and 76.

[0153] Note that the display device 20 can be divided into multiple regions, and pixels can be driven in each of the divided regions.

[0154] For example, such as Figure 9B As shown, circuits 75 and 76 can be separately arranged under pixel array 74. In this case, display device 20 has a stacked structure of layers 77 and 78, in which multiple circuits 75 and multiple circuits 76 are respectively arranged, and pixel array 74 is arranged in layer 78 in a manner that overlaps with them.

[0155] By segmenting configuration circuits 75 and 76, the pixel array 74 can be driven by segmented regions. For example, the pixel array 74 can be operated at a different frame rate for a portion of its components. The pixel array 74 can be displayed at a different resolution for a portion of its components, or it can be rendered corresponding to a foveated point.

[0156] Furthermore, by placing the driving circuitry in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance reduced. This allows for a display device capable of high-speed and low-power operation. Additionally, a narrow bezel design for the display device 20 can be achieved.

[0157] Notice, Figure 9B The configuration and area of ​​circuits 75 and 76 shown are merely examples and can be appropriately modified. Furthermore, a portion of circuits 75 and 76 can also be formed in the same layer as the pixel array 74. Additionally, layer 77 can also house circuits such as storage circuits, arithmetic circuits, and communication circuits.

[0158] In this structure, for example, layer 77 can be disposed on a single-crystal silicon substrate, circuits 75 and 76 can be formed using transistors (hereinafter, Si transistors) with silicon contained in the channel forming region, and the pixel circuits included in the pixel array 74 disposed in layer 78 can be formed using transistors (hereinafter, OS transistors) with metal oxide contained in the channel forming region. OS transistors can be thin films and stacked on Si transistors.

[0159] Note that, as Figure 9C As shown, a layer 79, in which OS transistors are disposed, may also be included between layer 77 and layer 78. OS transistors forming part of the pixel circuitry included in the pixel array 74 may be disposed in layer 79. Alternatively, OS transistors forming part of circuits 75 and 76 may be disposed. Alternatively, OS transistors forming part of circuits such as storage circuits, arithmetic circuits, and communication circuits that can be disposed in layer 77 may be disposed.

[0160] Furthermore, the top surface shape of the display device 20 is not limited to a rectangle; it can also be, for example... Figure 9D The circle shown. Or, it could be as follows: Figure 9E The octagon and other polygons shown.

[0161] Next, a pixel layout other than a stripe arrangement that can be used in one aspect of the present invention will be described. There are no particular limitations on the arrangement of the light-emitting elements (sub-pixels), and various arrangement methods can be used.

[0162] Examples of top surface shapes for sub-pixels include triangles, quadrilaterals (including rectangles and squares), pentagons, rounded corners of these polygons, ellipses, and circles. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting area of ​​a light-emitting element.

[0163] Figure 10A The pixel 140 shown is arranged in an S-stripes pattern. Figure 10A The pixel 140 shown is composed of three sub-pixels: light-emitting elements 110a, 110b, and 110c. For example, light-emitting elements 110a, 110b, and 110c can be blue, red, and green light-emitting elements, respectively.

[0164] Figure 10B The pixel 140 shown includes a light-emitting element 110a with a rounded corner and an approximate trapezoidal or triangular top surface shape, a light-emitting element 110b with a rounded corner and an approximate quadrilateral or hexagonal top surface shape, and a light-emitting element 110c with a rounded corner and an approximate quadrilateral or hexagonal top surface shape. Furthermore, the light-emitting area of ​​light-emitting element 110a is larger than that of light-emitting element 110b. Thus, the shape and size of each light-emitting element can be determined independently. For example, the size of a high-reliability light-emitting element can be smaller. For example, light-emitting elements 110a, 110b, and 110c can be green, red, and blue light-emitting elements, respectively.

[0165] Figure 10C The pixels 141a and 141b shown are arranged in a Pentile pattern. Figure 10C Examples are shown of pixels 141a and 110b, which are alternately configured with light-emitting elements 110a and 110b, and pixels 141b, which are composed of light-emitting elements 110b and 110c. For example, light-emitting elements 110a, 110b, and 110c may also be red, green, and blue light-emitting elements, respectively.

[0166] Figure 10DPixels 141a and 141b shown are arranged in a Delta pattern. Pixel 141a includes two light-emitting elements (light-emitting elements 110a and 110b) in the top row (first row) and one light-emitting element (light-emitting element 110c) in the bottom row (second row). Pixel 141b includes one light-emitting element (light-emitting element 110c) in the top row (first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the bottom row (second row). For example, light-emitting elements 110a, 110b, and 110c can also be red, green, and blue light-emitting elements, respectively.

[0167] Figure 10E An example is shown where the light-emitting elements of each color are arranged in a zigzag shape. Specifically, when viewed from above, the upper positions of two light-emitting elements arranged in the row direction (e.g., light-emitting element 110a and light-emitting element 110b or light-emitting element 110b and light-emitting element 110c) are not aligned. For example, light-emitting elements 110a, 110b, and 110c could also be red, green, and blue light-emitting elements, respectively.

[0168] Furthermore, although the example shown above illustrates sub-pixels corresponding to the three primary colors of light (R, G, B), sub-pixels including a white-emitting element 110 can also be provided. By adding white-emitting sub-pixels, power consumption can be reduced. Additionally, brightness can be increased.

[0169] For example, in the case of white display, driving a single W subpixel can reduce power consumption compared to driving three subpixels (R, G, B) to emit white light. In particular, when the light source is white and a color layer (color filter) is applied to the R, G, B subpixels, the light intensity attenuation is significant. Therefore, the effect of the W subpixel, which does not use a color layer, becomes greater.

[0170] Furthermore, white light can be said to contain components of red, green, and blue light, so the color produced by red, green, and blue light can also be one or two of white, red, green, and blue light. Therefore, the number of driven sub-pixels can be reduced based on the produced color, thereby reducing power consumption.

[0171] Furthermore, white light replaces the red + green + blue light, causing the W sub-pixel to emit light in the same way as all the R, G, and B sub-pixels. Therefore, by making all four sub-pixels (R, G, B, and W) emit light, the display brightness can be increased.

[0172] The four sub-pixels of R, G, B, and W can be, for example, Figure 10F The stripe arrangement shown has 145 pixels.

[0173] In addition, such as Figure 10G As shown, subpixels can also be arranged in 3 rows and 2 columns. Figure 10G The pixels shown include a light-emitting element 110b in the top row (first row), a light-emitting element 110c in the middle row (second row), a light-emitting element 110a in the first and second rows, and a light-emitting element 110d in the bottom row (third row). Figure 10G In the pixels shown, the layout of R, G, and B forms what is known as an S-striped arrangement, which improves display quality.

[0174] In photolithography, the finer the pattern being processed, the more significant the effect of light diffraction becomes. Therefore, when transferring the photomask pattern through exposure, its fidelity decreases, making it difficult to process the resist mask into the desired shape. Consequently, even if the photomask pattern is rectangular, it is easy to form a pattern with rounded corners. Thus, the top surface shape of a light-emitting element is sometimes a polygon with rounded corners, an ellipse, or a circle.

[0175] Furthermore, in one embodiment of the manufacturing method of the display device of the present invention, an EL layer is processed into an island shape using a mask (convex lens 127) made of resin. The resin mask formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resin material, the mask is sometimes not cured sufficiently. An insufficiently cured mask may sometimes take on a shape far from the desired shape during processing. As a result, the top surface shape of the EL layer may sometimes be a polygonal shape with rounded corners, an ellipse, or a circle. For example, when a mask with a square top surface shape is to be formed, sometimes a mask with a circular top surface shape is formed and the top surface shape of the EL layer is circular.

[0176] To ensure the top surface of the EL layer has the desired shape, a technique called OPC (Optical Proximity Correction) can be used to pre-correct the mask pattern in a way that aligns the design pattern with the transfer pattern. Specifically, in OPC, correction patterns are added to the corners and other areas of the pattern on the mask.

[0177] The above explains the pixel layout.

[0178] Figure 11A This diagram illustrates an example of a spectacle-type device that includes a display device and optical equipment according to one aspect of the present invention. Here, the combination of the display device 20 and the optical equipment 21 is shown as a display unit 60 and is indicated by dashed lines. Figure 11B This is a diagram illustrating the constituent elements of the display unit 60.

[0179] The user's eyes can see the image displayed on the display device 20 by approaching the optical device 21 located near the display surface of the display device 20. The user sees the image with a widened viewing angle through the optical device 21, thereby gaining a sense of immersion and realism.

[0180] The linear polarizer 62 and the phase retardation plate 63 can be attached to the display surface of the display device 20. The optical device 21 may include, for example, a semi-reflective mirror 64, a lens 65, a phase retardation plate 66, a reflective polarizer 67, and a lens 68.

[0181] The light emitted by the display device 20 is converted into linearly polarized or circularly polarized light by the optical device 21, and selective reflection and transmission can be achieved using elements arranged in the optical path. This allows for ensuring the optical path length within a limited space and shortens the focal distance of the optical device. This optical system is called a reflective refractive optical system. Additionally, due to its thin shape, it is sometimes called a pancake lens.

[0182] Two display units 60 are mounted in the housing 30 with the surface of the lens 68 exposed on the inside. One display unit 60 is a right-eye display unit, and the other display unit 60 is a left-eye display unit. By displaying images corresponding to parallax using each display unit 60, the user can perceive the stereoscopic effect of the image.

[0183] Alternatively, the housing 30 or the retaining tool 35 may also be provided with input terminals and output terminals. Cables supplying image signals from image output devices or power for charging batteries can be connected to the input terminals. The output terminals may be used as audio output terminals, for example, and can be connected to headphones or headsets. Alternatively, if audio data can be output wirelessly or audio can be output from an external image output device, this audio output terminal may not be provided.

[0184] Alternatively, a wireless communication module and a storage module may be installed inside the housing 30 or the holding tool 35. Content that can be downloaded and viewed wirelessly can be stored in the storage module. Thus, the user can view the downloaded content offline at any time.

[0185] Alternatively, a gaze detection sensor can be installed inside the housing 30. For example, it can display operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, confirmation, and return, as well as operation buttons such as video play, stop, pause, fast forward, and rewind, so that the user can see these operation buttons and perform various operations.

[0186] In addition, such as Figure 12AAs shown, the operation of the aforementioned buttons can also be performed using a touch sensor 16 located on the front panel 15, which is part of the housing 30. When users watch VR images, it is difficult for them to directly see their surroundings, so they cannot leave the remote control or other operating devices, which is inconvenient. If a touch sensor 16 is provided in the housing 30, operability can be improved, and the freedom of hand movement can be increased.

[0187] As a touch sensor 16, a pointing device utilizing an electrostatic capacitive sensor can typically be used. For example... Figure 12B As shown, the touch sensor 16 can be attached to the outer side of the panel 15 located on the front of the housing 30. Attaching it to the outer side of the housing 30 improves sensing sensitivity. Alternatively, a protective film or similar material can be provided in front of the touch sensor 16.

[0188] Or, such as Figure 12C As shown, the touch sensor 16 can also be attached to the inside of the panel 15. In this structure, since the panel 15 protects the touch sensor 16, reliability can be improved. Additionally, as... Figure 12D As shown, the touch sensor 16 can also be disposed on the surface opposite to the display surface of the display device 20. By adopting this structure, it can share the power supply path with the display device 20, thereby reducing component costs.

[0189] In addition, such as Figure 13A As shown, the touch sensor 16 can also be located on the side of the housing 30. Figure 13A An example is shown where touch sensors 16 are provided on both sides of the housing 30, but they can also be provided on only one side of the housing 30. Alternatively, they can be provided on the upper or lower side of the housing 30. Furthermore, they can be combined... Figure 12A and Figure 13A The structure has touch sensors 16 installed on both the front (front side or back side of panel 15) and the sides of housing 30. Alternatively, a single touch sensor 16 can be installed from the front to the side of housing 30.

[0190] In addition, such as Figure 13B As shown, the display unit 60 can also be a combination of a display device 22 and two optical devices. By displaying two images corresponding to the left and right eyes on the display device 22, the display device can be made into one unit, thereby reducing component costs. In addition, the display unit 60 can be easily installed in the housing 30.

[0191] By using a display device according to one aspect of the present invention in an eyeglass-type device, an electronic device with low power consumption and high reliability can be realized.

[0192] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0193] (Implementation Method 2)

[0194] In this embodiment, other structural examples of the display panel of a display device that can be used in one aspect of the present invention are described.

[0195] The display panel in this embodiment is a high-definition display panel, which is particularly suitable for display sections of wearable devices that can be worn on the head, such as head-mounted displays and AR devices that can be worn on the head.

[0196] [Display Module]

[0197] Figure 14A A perspective view of display module 280 is shown. Display module 280 includes display panel 200A and FPC 290. Note that the display panel included in display module 280 is not limited to display panel 200A, but may be any of display panels 200B to 200G, which will be described later.

[0198] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display section 281. The display section 281 is an area for displaying images.

[0199] Figure 14B A perspective view of one side of the substrate 291 is shown. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. Furthermore, a terminal section 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 is electrically connected to the circuit section 282 via a wiring section 286 composed of multiple wirings.

[0200] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Figure 14B The right side shows an enlarged view of pixel 284a. Pixel 284a includes a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0201] The pixel circuit section 283 includes a plurality of pixel circuits 283a arranged periodically. One pixel circuit 283a controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a may include three circuits controlling the light emission of one light-emitting device. For example, the pixel circuit 283a may adopt a structure having at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, the gate of the selection transistor is input with a gate signal, and the source is input with a source signal. Thus, an active matrix display panel can be realized.

[0202] The circuit section 282 includes circuitry for driving each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. Furthermore, it may include at least one of an arithmetic circuit, a storage circuit, and a power supply circuit. Additionally, transistors disposed in the circuit section 282 may also constitute part of the pixel circuit 283a. That is, the pixel circuit 283a may be constituted by transistors included in the pixel circuit section 283 and transistors included in the circuit section 282.

[0203] The FPC290 is used for wiring to supply video signals or power potentials, etc., from the outside to the circuit section 282. Additionally, ICs can be mounted on the FPC290.

[0204] The display module 280 can have a structure in which one or both of the pixel circuit section 283 and circuit section 282 are stacked on the lower side of the pixel section 284, so that the display section 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and less than 95%, more preferably 60% or more and less than 95%. In addition, the pixels 284a can be arranged in an extremely high density, thereby enabling the display section 281 to have an extremely high pixel density. For example, the display section 281 preferably has pixels 284a arranged in a pixel density of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, and even more preferably 6000 ppi or more and less than 20000 ppi or less or less than 30000 ppi.

[0205] This display module 280 is extremely clear, making it suitable for use in VR devices such as head-mounted displays or AR devices such as glasses. For example, because the display module 280 has a display section 281 with extremely high clarity, even when the user magnifies the display section through a lens, the pixels are not visible, thus achieving a highly immersive display. Furthermore, the display module 280 can also be applied to electronic devices with relatively small display sections. For example, it is suitable for use in the display sections of wearable electronic devices such as watches.

[0206] [Display Panel 200A]

[0207] Figure 15 The display panel 200A shown includes a substrate 301, light-emitting elements 110R, 110G, 110B, a capacitor 240, and a transistor 310.

[0208] Substrate 301 is equivalent to Figure 14A and Figure 14B Substrate 291 in the middle.

[0209] Transistor 310 is a transistor having a channel formation region in substrate 301. Substrate 301 can be, for example, a semiconductor substrate such as a single-crystal silicon substrate. Transistor 310 includes a portion of substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. Conductive layer 311 serves as the gate electrode. Insulating layer 313 is located between substrate 301 and conductive layer 311 and serves as the gate insulating layer. Low-resistance region 312 is a region in substrate 301 doped with impurities and serves as one of the source and drain electrodes. Insulating layer 314 covers the sides of conductive layer 311.

[0210] In addition, a component separation layer 315 is provided between two adjacent transistors 310 in a manner embedded in the substrate 301.

[0211] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0212] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240.

[0213] A conductive layer 241 is disposed on an insulating layer 261 and embedded in an insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain terminals of the transistor 310 via a connector 271 embedded in the insulating layer 261. An insulating layer 243 is disposed covering the conductive layer 241. A conductive layer 245 is disposed in the region where it overlaps with the conductive layer 241, separated by the insulating layer 243.

[0214] The capacitor 240 is provided with an insulating layer 255a, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b.

[0215] Inorganic insulating films can be appropriately used for insulating layers 255a, 255b, and 255c. For example, it is preferable to use silicon oxide films as insulating layers 255a and 255c, and silicon nitride films as insulating layer 255b. Thus, insulating layer 255b can be used as an etching protective film. Although an example is shown in this embodiment where a portion of insulating layer 255c is etched to form a recess, it is also possible not to form a recess in insulating layer 255c.

[0216] Light-emitting elements 110R, 110G, and 110B are disposed on the insulating layer 255c. The structures of light-emitting elements 110R, 110G, and 110B can be referred to Embodiment 2.

[0217] The display panel 200A forms light-emitting elements for each light-emitting color separately, resulting in minimal chromaticity variation between low-brightness and high-brightness emission. Furthermore, the organic layers 112R, 112G, and 112B are separated from each other, thus suppressing crosstalk between adjacent sub-pixels even when using a high-definition display panel. Therefore, a high-definition display panel with high display quality can be achieved.

[0218] An insulating layer 125 and a resin layer 126 are provided in the area between adjacent light-emitting elements.

[0219] The pixel electrodes 111R, 111G, and 111B of the light-emitting element are electrically connected to one of the source and drain electrodes of the transistor 310 via a plug 256 embedded in insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 255c is the same as or approximately the same as the height of the top surface of plug 256. Various conductive materials can be used as plugs.

[0220] In addition, a protective layer 121 is provided on the light-emitting elements 110R, 110G and 110B. A substrate 102 is attached to the protective layer 121 by a layer 129 used as an adhesive layer.

[0221] No insulating layer covering the top end of the pixel electrode 111 is provided between two adjacent pixel electrodes 111. Therefore, the spacing between adjacent light-emitting elements can be very small. Thus, a high-definition or high-resolution display panel can be realized.

[0222] [Display Panel 200B]

[0223] Figure 16 The display panel 200B shown has a structure in which transistors 310A and 310B, respectively forming channels in a semiconductor substrate, are stacked. Note that in the following description of the display panel, parts that are the same as those described previously are sometimes omitted.

[0224] The display panel 200B has the following structure: a substrate 301B on which transistors 310B, capacitors 240 and light-emitting devices are attached, and a substrate 301A on which transistors 310A are attached.

[0225] Here, an insulating layer 345 is disposed on the bottom surface of substrate 301B, and an insulating layer 346 is disposed on the insulating layer 261 disposed on substrate 301A. Insulating layers 345 and 346 are insulating layers used as protective layers, which can suppress the diffusion of impurities to substrates 301B and 301A. As insulating layers 345 and 346, inorganic insulating films that can be used for protective layer 121 can be used.

[0226] A plug 343 is provided in the substrate 301B, passing through the substrate 301B and the insulating layer 345. Here, it is preferable that an insulating layer 344, serving as a protective layer, is provided on the side covering the plug 343.

[0227] Furthermore, a conductive layer 342 is provided on the underside of the insulating layer 345 on the bottom surface of the substrate 301B. The conductive layer 342 is embedded in the insulating layer 335, and the bottom surfaces of the conductive layer 342 and the insulating layer 335 are planarized. In addition, the conductive layer 342 is electrically connected to the plug 343.

[0228] On the other hand, a conductive layer 341 is disposed on the insulating layer 346 on the substrate 301A. The conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0229] The same conductive material is preferably used for both conductive layers 341 and 342. For example, a metal film containing elements selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the aforementioned elements can be used. Copper is particularly preferred for both conductive layers 341 and 342. This allows for the use of Cu-Cu (copper-copper) direct bonding technology (a technology that enables electrical conduction by connecting Cu (copper) pads to each other).

[0230] [Display Panel 200C]

[0231] Figure 17 The display panel 200C shown has a structure in which conductive layers 341 and 342 are joined by bumps 347.

[0232] like Figure 17 As shown, by providing a bump 347 between conductive layer 341 and conductive layer 342, conductive layer 341 and conductive layer 342 can be electrically connected. The bump 347 can be formed, for example, using a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), etc. Furthermore, solder is sometimes used as the bump 347. Additionally, an adhesive layer 348 can be provided between insulating layer 345 and insulating layer 346. Furthermore, when providing the bump 347, insulating layers 335 and 336 may not be provided.

[0233] [Display Panel 200D]

[0234] Figure 18 The main difference between the display panel 200D and the display panel 200A is the structure of the transistors.

[0235] Transistor 320 is a transistor (OS transistor) that uses metal oxide (also known as oxide semiconductor) in the semiconductor layer that forms the channel.

[0236] Transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0237] Substrate 331 is equivalent to Figure 14A and Figure 14B Substrate 291 in the middle.

[0238] An insulating layer 332 is disposed on the substrate 331. The insulating layer 332 serves as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from escaping from the semiconductor layer 321 towards the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.

[0239] A conductive layer 327 is disposed on the insulating layer 332, and an insulating layer 326 is disposed to cover the conductive layer 327. The conductive layer 327 serves as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 serves as a first gate insulating layer. The portion of the insulating layer 326 that contacts the semiconductor layer 321 is preferably an oxide insulating film such as silicon oxide. The top surface of the insulating layer 326 is preferably planarized.

[0240] A semiconductor layer 321 is disposed on an insulating layer 326. The semiconductor layer 321 preferably contains a metal oxide (also known as an oxide semiconductor) film exhibiting semiconductor properties. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and serve as source and drain electrodes.

[0241] An insulating layer 328 is provided to cover the top and side surfaces of a pair of conductive layers 325 and the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 serves as a barrier layer to prevent impurities such as water or hydrogen from diffusing from the insulating layer 264 to the semiconductor layer 321 and to prevent oxygen from detaching from the semiconductor layer 321. The same insulating film as the insulating layer 332 described above can be used as the insulating layer 328.

[0242] An opening is provided in insulating layer 328 and insulating layer 264 to reach semiconductor layer 321. An insulating layer 323 and a conductive layer 324, which are in contact with the top surface of semiconductor layer 321, are embedded inside the opening. The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

[0243] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are all the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0244] Insulating layers 264 and 265 are used as interlayer insulating layers. Insulating layer 329 is used as a barrier layer to prevent impurities such as water or hydrogen from diffusing from insulating layer 265 to transistor 320. Insulating layer 329 can use the same insulating film as insulating layers 328 and 332 described above.

[0245] A plug 274, electrically connected to one of the pair of conductive layers 325, is embedded in insulating layers 265, 329, and 264. Preferably, the plug 274 has a conductive layer 274a covering the side surfaces of the openings of each of the insulating layers 265, 329, 264, and 328, and a portion of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, a conductive material that does not readily diffuse hydrogen and oxygen is preferably used as the conductive layer 274a.

[0246] There are no particular limitations on the structure of the transistors included in the display panel of this embodiment. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. In addition, top-gate or bottom-gate transistor structures can also be used. Alternatively, gates can be provided above and below the semiconductor layer forming the channel.

[0247] Transistor 320 employs a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates can be connected, and the transistor can be driven by supplying the same signal to both gates. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential to one of the two gates to control the threshold voltage and applying a potential to the other to drive it.

[0248] There are no particular restrictions on the crystallinity of the semiconductor material used in the semiconductor layer of the transistor; amorphous semiconductors, single-crystal semiconductors, or crystalline semiconductors other than single-crystal semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in a portion thereof) can be used. When using single-crystal semiconductors or crystalline semiconductors, the degradation of transistor characteristics can be suppressed, so they are preferred.

[0249] The bandgap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide with a wider bandgap, the off-state current of the OS transistor can be reduced.

[0250] The metal oxide preferably contains at least indium or zinc, and more preferably contains both indium and zinc. For example, the metal oxide preferably contains indium, M (M is selected from one or more of gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and cobalt) and zinc.

[0251] Alternatively, the semiconductor layer of a transistor can also contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polycrystalline silicon, monocrystalline silicon, etc.).

[0252] Examples of metal oxides suitable for use in semiconductor layers include indium oxide, gallium oxide, and zinc oxide. Furthermore, the metal oxide preferably comprises two or three elements selected from indium, element M, and zinc. Element M is selected from one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, element M is preferably selected from one or more of aluminum, gallium, yttrium, and tin.

[0253] Note that when using metal oxides as semiconductor layers, the metal oxides are preferably formed using sputtering or ALD (Alternating Current Deposition). Sputtering increases productivity and film density, while ALD improves film coverage.

[0254] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium, gallium, and zinc (also denoted as IGZO) is preferred. Alternatively, an oxide containing indium, tin, and zinc (also denoted as ITZO (registered trademark)) is preferred. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferred. Alternatively, an oxide containing indium, aluminum, and zinc (also denoted as IAZO) is preferred. Alternatively, an oxide containing indium, aluminum, gallium, and zinc (also denoted as IAGZO) is preferred.

[0255] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic ratio of M. Examples of such atomic ratios of the metal elements in the In-M-Zn oxide include: In:M:Zn = 1:1:1 or similar; In:M:Zn = 1:1:1.2 or similar; In:M:Zn = 1:3:2 or similar; In:M:Zn = 1:3:4 or similar; In:M:Zn = 2:1:3 or similar; In:M:Zn = 3:1:2 or similar; In:M: Compositions with Zn = 4:2:3 or similar, In:M:Zn = 4:2:4.1 or similar, In:M:Zn = 5:1:3 or similar, In:M:Zn = 5:1:6 or similar, In:M:Zn = 5:1:7 or similar, In:M:Zn = 5:1:8 or similar, In:M:Zn = 6:1:6 or similar, In:M:Zn = 5:2:5 or similar. Note that "simultaneous" composition includes a range of ±30% of the desired atomic number ratio.

[0256] Gallium or tin is preferably used as element M. Furthermore, multiple of the above elements can be combined as element M. Additionally, In:M:Zn = 40:1:10 and nearby metal oxides are preferably used as the semiconductor layer. Specifically, In:Sn:Zn = 40:1:10 and nearby metal oxides can be suitably used.

[0257] For example, when the atomic number ratio is described as In:Ga:Zn = 4:2:3 or similar, the following cases are included: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Furthermore, when the atomic number ratio is described as In:Ga:Zn = 5:1:6 or similar, the following cases are included: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. Moreover, when the atomic number ratio is described as In:Ga:Zn = 1:1:1 or similar, the following cases are included: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0258] The semiconductor layer may also comprise two or more metal oxide layers with different compositions. For example, a stacked structure may be suitable, consisting of a first metal oxide layer with an In:M:Zn ratio of 1:3:4 or similar, and a second metal oxide layer disposed on the first metal oxide layer with an In:M:Zn ratio of 1:1:1 or similar. Furthermore, gallium or aluminum is particularly preferred as element M.

[0259] Alternatively, for example, a stacked structure selected from any one of indium oxide, indium gallium oxide and IGZO and any one of IAZO, IAGZO and ITZO (registered trademark) may also be used.

[0260] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0261] Compared to transistors using amorphous silicon, OS transistors have a very high field-effect mobility. Furthermore, the source-drain leakage current (also known as off-state current) of an OS transistor in the off state is extremely low, allowing it to retain the charge stored in the capacitor connected in series with the transistor for extended periods. Additionally, using OS transistors can reduce the power consumption of display panels.

[0262] Furthermore, to increase the luminous brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain breakdown voltage of an OS transistor is higher than that of a Si transistor, a higher voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the luminous brightness of the light-emitting device.

[0263] Furthermore, when the transistor operates in the saturation region, the source-drain current change of an OS transistor with respect to changes in the gate-source voltage is much smaller compared to a Si transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail based on the change in the gate-source voltage, thus controlling the amount of current flowing through the light-emitting device. This allows for an increase in the grayscale value of the pixel circuit.

[0264] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when operating in the saturation region, compared to a Si transistor, an OS transistor can maintain a stable current (saturation current) even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as a driving transistor, a stable current can flow through the light-emitting device even if the current-voltage characteristics of, for example, EL devices become non-uniform. In other words, when an OS transistor operates in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the brightness of the light-emitting device.

[0265] As described above, by using OS transistors as driving transistors included in pixel circuits, it is possible to achieve "reduction in power consumption", "increase in luminous brightness", "multi-grayscale conversion", and "suppression of non-uniformity of light-emitting devices".

[0266] [Display Panel 200E]

[0267] exist Figure 19 The display panel 200E shown has transistors 310 with channels formed on substrate 301 and transistors 320 with metal oxide semiconductor layers forming the channels stacked on it.

[0268] An insulating layer 261 is provided to cover transistor 310, and a conductive layer 251 is provided on the insulating layer 261. Furthermore, an insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. Both conductive layers 251 and 252 are used for wiring. Additionally, insulating layers 263 and 332 are provided to cover the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. Furthermore, an insulating layer 265 is provided to cover transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 is electrically connected to the transistor 320 via a connector 274.

[0269] Transistor 320 can be used as a transistor constituting a pixel circuit. Furthermore, transistor 310 can be used as a transistor constituting a pixel circuit or as a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) used to drive the pixel circuit. Additionally, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0270] With this structure, not only pixel circuits but also driving circuits can be formed directly under the light-emitting device. Therefore, compared with setting the driving circuits around the display area, the display panel can be miniaturized.

[0271] [Display Panel 200F]

[0272] Figure 20The display panel 200F shown uses transistor 320A (vertical transistor) instead of Figure 19 The structure of transistor 320 in the display panel 200E shown is illustrated. Alternatively, a structure using transistor 320A instead of transistor 320 can also be used. Figure 18 The display panel shown is 200D.

[0273] Figure 21A This is a cross-sectional view of the XZ plane of transistor 320A. Furthermore, Figure 21B It is a cross-sectional view of the XY plane including the wiring 440.

[0274] Transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. The oxide semiconductor 470 serves as a semiconductor layer, the insulator 430 serves as a gate insulator, and the conductor 420 serves as a gate electrode. Furthermore, wiring 450 has a region serving as one of the source and drain electrodes of transistor 320A. Additionally, wiring 440 has a region serving as the other of the source and drain electrodes of transistor 320A.

[0275] An opening 490 is provided to reach the wiring 450 through the wiring 440 and the insulator 480. The top surface of the opening 490 is a generally circular columnar shape. By adopting this structure, miniaturization or high integration of the memory cells can be achieved. Note that the side surface of the opening 490 is preferably perpendicular to the top surface of the wiring 450.

[0276] At least a portion of the oxide semiconductor 470 is disposed in the opening 490. The oxide semiconductor 470 has a region in the opening 490 that contacts the top surface of the wiring 450, a region that contacts the side surface of the wiring 440, and a region that contacts the side surface of the insulator 480.

[0277] The insulator 430 is configured such that at least a portion of it covers the opening 490. The conductor 420 is configured such that at least a portion of it is located in the opening 490. Note that the conductor 420 is preferably disposed in a manner that is embedded in the opening 490, and its top surface shape is preferably generally circular in order to improve integration.

[0278] like Figure 21A As shown, the oxide semiconductor 470 has region 470i, region 470na and region 470nb disposed in a manner that sandwiches region 470i.

[0279] Region 470na is a region in the oxide semiconductor 470 that contacts wiring 450. At least a portion of region 470na is used as one of the source and drain regions of transistor 320A. Region 470nb is a region in the oxide semiconductor 470 that contacts wiring 440. At least a portion of region 470nb is used as the other of the source and drain regions of transistor 320A. Figure 21B As shown, wiring 440 contacts the entire outer periphery of oxide semiconductor 470. Therefore, the other of the source and drain regions of transistor 320A may be formed on the entire outer periphery of the portion of oxide semiconductor 470 formed in the same layer as wiring 440.

[0280] Region 470i is the region between regions 470na and 470nb in the oxide semiconductor 470. At least a portion of region 470i is used as the channel formation region of transistor 320A. That is, the channel formation region of transistor 320A is formed in a portion of the oxide semiconductor 470 located between wiring 450 and wiring 440. Alternatively, it can be said that the channel formation region of transistor 320A is located in or near the region of oxide semiconductor 470 that contacts insulator 480.

[0281] The channel length of transistor 320A is the distance between the source and drain regions. In other words, the channel length of transistor 320A can be said to be determined by the thickness of the insulator 480 on the wiring 450. Figure 21A In the diagram, the channel length L of transistor 320A is indicated by a dashed double arrow. In cross-section, the channel length L is the distance between the end of the region where the oxide semiconductor 470 and the wiring 450 contact each other and the end of the region where the oxide semiconductor 470 and the wiring 440 contact each other. That is, the channel length L is equivalent to the length of the side surface of the insulator 480 on the opening 490 side in cross-section.

[0282] In planar transistors, the channel length is limited by the exposure limit of photolithography, making further miniaturization difficult. However, in one aspect of the present invention, the channel length can be set according to the thickness of the insulator 480. Therefore, the channel length of transistor 320A can be set to a very fine structure below the exposure limit of photolithography (e.g., below 60 nm, below 50 nm, below 40 nm, below 30 nm, below 20 nm, or below 10 nm and above 1 nm or above 5 nm). This increases the on-state current of transistor 320A.

[0283] Furthermore, as described above, a channel forming region, a source region, and a drain region can be formed in the opening 490. Therefore, compared to existing transistors that have the channel forming region, source region, and drain region respectively located on the XY plane, the occupied area of ​​transistor 320A can be reduced. This, in turn, can increase pixel density.

[0284] Thus, a transistor with a channel forming region along the side of the insulator 480 in the opening 490 is also called a longitudinal transistor.

[0285] Additionally, on the XY plane of the channel formation region including the oxide semiconductor 470, and... Figure 21B Similarly, the oxide semiconductor 470, insulator 430, and conductor 420 are arranged in a concentric circle. Therefore, the side of the conductor 420 located at the center faces the side of the oxide semiconductor 470 across the insulator 430. In other words, the entire outer periphery of the oxide semiconductor 470 forms the channel formation region when viewed from above. At this time, for example, the channel width of the transistor 320A is determined by the length of the outer periphery of the oxide semiconductor 470. That is to say, the channel width of the transistor 320A can be said to be determined by the size of the maximum width of the opening 490 (the maximum diameter if the opening 490 is circular when viewed from above). Figure 21A and Figure 21B In the diagram, a double-headed arrow with a double-dotted line represents the maximum width D of the opening at 490 degrees. Figure 21B In the diagram, the channel width W of transistor 320A is represented by a double-headed dotted arrow. By increasing the maximum width D of the opening 490, the channel width per unit area can be increased, thereby increasing the on-state current.

[0286] When the opening 490 is formed using photolithography, the maximum width D of the opening 490 is limited by the exposure limit of the photolithography method. Furthermore, the maximum width D of the opening 490 is determined based on the thicknesses of the oxide semiconductor 470, insulator 430, and conductor 420 disposed in the opening 490. The maximum width D of the opening 490 is preferably, for example, 5 nm or more, 10 nm or more, or 20 nm or more and less than 100 nm, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. Note that when the shape of the opening 490 in top view is circular, the maximum width D of the opening 490 is equivalent to the diameter of the opening 490, and the channel width W can be calculated as "D×π".

[0287] Furthermore, in one embodiment of the memory device of the present invention, the channel length L of transistor 320A is preferably at least smaller than the channel width W of transistor 320A. In one embodiment of the present invention, the channel length L of transistor 320A is at least 0.1 times and less than 0.99 times the channel width W of transistor 320A, preferably at least 0.5 times and less than 0.8 times. By employing this structure, transistors with good electrical characteristics and high reliability can be realized.

[0288] Furthermore, by forming the opening 490 in a generally circular manner when viewed from above, the oxide semiconductor 470, insulator 430, and conductor 420 are arranged in a concentric circle. As a result, the distance between the conductor 420 and the oxide semiconductor 470 is approximately uniform, so a gate electric field can be applied to the oxide semiconductor 470 in a approximately uniform manner.

[0289] In the channel formation region of a transistor using oxide semiconductors as the semiconductor layer, it is preferable to have fewer oxygen vacancies or lower concentrations of impurities such as hydrogen, nitrogen, and metal elements compared to the source and drain regions. For example, the aluminum concentration in the channel formation region of the oxide semiconductor is preferably 1 × 10⁻⁶. 22 atoms / cm 3 Hereinafter, 1×10 is more preferred. 21 atoms / cm 3 Hereinafter, 1×10 is more preferred. 20 atoms / cm 3 The following is more preferably 5×10 19 atoms / cm 3 Hereinafter, 1×10 is more preferred. 19 atoms / cm 3 The following is more preferably 5×10 18 atoms / cm 3 Hereinafter, 1×10 is more preferred. 18 atoms / cm 3 the following.

[0290] In addition, hydrogen near oxygen vacancies sometimes forms defects where hydrogen enters the oxygen vacancy (hereinafter sometimes referred to as V). O H) generates electrons that become charge carriers, so V is generated in the channel formation region. O H is also preferably reduced. Thus, the channel formation region of the transistor is a high-resistivity region with low carrier concentration. Therefore, the channel formation region of the transistor can be described as i-type (intrinsic) or substantially i-type.

[0291] Furthermore, the source and drain regions of transistors using oxide semiconductors as semiconductor layers are as follows: Due to the higher number of oxygen vacancies compared to the channel formation region, V... OHigh concentrations of impurities such as hydrogen, nitrogen, and metals increase carrier concentration, resulting in lower resistance. In other words, compared to the channel region, the source and drain regions of a transistor are n-type regions with higher carrier concentration and lower resistance.

[0292] Note that in Figure 21A In some embodiments, the opening 490 is provided such that the side of the opening 490 is perpendicular to the top surface of the wiring 450, but the present invention is not limited thereto. For example, the side of the opening 490 may also be tapered.

[0293] [Display Panel 200G]

[0294] Figure 22 The display panel shown is 200G. Figure 19 The modified example of the display panel 200E shown is an example in which the camera element is arranged on the side opposite to the light-emitting element 110.

[0295] The photodiode 540 of the camera element is a pn junction photodiode formed on a silicon substrate and includes a p-type region 543 and an n-type region 544. The photodiode 540 is an embedded photodiode, and noise can be reduced by suppressing dark current through a thinner p-type region 543 disposed on one side of the surface of the n-type region 544 (the side from which current is extracted).

[0296] Insulating layer 541 is used as a barrier layer. Insulating layer 542 is used as a component separation layer. Insulating layer 545 has the function of suppressing carrier outflow. Insulating layer 546 is used as an interlayer film.

[0297] A groove for separating pixels is formed in the silicon substrate, and an insulating layer 545 is disposed on the surface of the silicon substrate and in the groove. By providing the insulating layer 545, the outflow of charge carriers generated in the photodiode 540 to adjacent pixels can be suppressed. In addition, the insulating layer 545 also has the function of suppressing stray light intrusion. Therefore, color mixing can be suppressed by using the insulating layer 545. Furthermore, an anti-reflection film can also be provided between the top surface of the silicon substrate and the insulating layer 545.

[0298] The component separation layer can be formed using methods such as LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation). The insulating layer 545 can be, for example, an inorganic insulating film such as silicon oxide or silicon nitride, or an organic insulating film such as polyimide resin or acrylic resin. Furthermore, the insulating layer 545 can also have a multilayer structure.

[0299] Transistor 103 has a channel formation region in the silicon substrate on which photodiode 540 is disposed. The n-type region 544 of photodiode 540 (equivalent to cathode) is used as one of the source and drain of transistor 103, and the other of the source and drain of transistor 103 is electrically connected to the gate of transistor 310 through conductive layers 532a and 532b.

[0300] Transistor 103 and transistor 310 are components of the pixel circuit. Transistor 103 is used as a transfer transistor to transfer the charge generated by photodiode 540 to the gate of transistor 310, and transistor 310 is used as an amplification transistor. The p-type region 543 (anode) is electrically connected to wiring 260, which serves as a power supply line, through conductive layers 531a and 531b.

[0301] In addition, the layer in which transistor 310 is provided may also be provided with driving circuits for driving pixels including light-emitting elements, driving circuits for driving pixels including imaging elements, or storage circuits.

[0302] Conductive layers 531a, 531b, 532a, and 532b are also part of the bonding layer (layer 208), and transistors 103 and 310 are connected during the bonding process. The bonding layer (layer 208) will be described in detail later.

[0303] A light-shielding layer 551, an optical conversion layer 550, and a microlens array 555 are provided on one side of the light-receiving surface of the photodiode 540.

[0304] The light-shielding layer 551 can suppress light incident on adjacent pixels. The light-shielding layer 551 can be a metal layer such as aluminum or tungsten. Alternatively, this metal layer can be laminated with a dielectric film that functions as an anti-reflective film.

[0305] When the photodiode 540 is sensitive to visible light, color filters can be used as the optical conversion layer 550. By assigning color filters of colors such as R (red), G (green), B (blue), Y (yellow), C (cyan), and M (magenta) to each pixel, a color image can be obtained.

[0306] For example, such as Figure 23A As shown in the 3D diagram (including cross-section), color filters 550R (red), 550G (green), and 550B (blue) can also be assigned to different pixels.

[0307] Furthermore, in a suitable combination of photodiode 540 and optical conversion layer 550, when a wavelength cutoff filter is used as optical conversion layer 550, an imaging device capable of acquiring images in various wavelength regions can be realized.

[0308] For example, when an infrared filter that blocks light with wavelengths below the visible light wavelength is used as the optical conversion layer 550, an infrared imaging device can be obtained. Furthermore, by using a filter that blocks light with wavelengths below the near-infrared wavelength as the optical conversion layer 550, a far-infrared imaging device can be formed. Moreover, by using an ultraviolet filter that blocks light with wavelengths above the visible light wavelength as the optical conversion layer 550, an ultraviolet imaging device can be formed.

[0309] Furthermore, multiple different optical conversion layers can be configured within a single camera device. For example, such as Figure 23B As shown, color filters 550R (red), 550G (green), 550B (blue), and 550IR (infrared) can be assigned to different pixels. By employing this structure, visible light and infrared images can be acquired simultaneously.

[0310] Or, such as Figure 23C As shown, color filters 550R (red), 550G (green), 550B (blue), and 550UV (ultraviolet) can be assigned to different pixels. By employing this structure, visible light and ultraviolet light images can be acquired simultaneously.

[0311] Furthermore, by using a scintillator in the optical conversion layer 550, an imaging device for obtaining images that visualize radiation intensity can be formed, such as an X-ray imaging device. When radiation such as X-rays passing through the object being photographed is incident on the scintillator, it is converted into light (fluorescence) such as visible light or ultraviolet light due to photoluminescence. Image data is obtained by detecting this light using a photodiode 540. Additionally, this imaging device can also be used in radiation detectors, etc.

[0312] Scintillators contain substances that absorb the energy of radiation such as X-rays or gamma rays and emit visible or ultraviolet light when irradiated. For example, materials such as Gd₂O₂S:Tb, Gd₂O₂S:Pr, Gd₂O₂S:Eu, BaFCl:Eu, NaI, CsI, CaF₂, BaF₂, CeF₃, LiF, LiI, and ZnO dispersed in resin or ceramics can be used.

[0313] By utilizing infrared or ultraviolet light for imaging, camera devices can be endowed with detection, safety, and sensing functions. For example, infrared imaging can be used for non-destructive testing of products, selection of agricultural products (such as saccharimeter functions), vein recognition, and medical testing. Furthermore, ultraviolet imaging can detect ultraviolet light emitted from light sources or flames, enabling the management of light sources, heat sources, and production equipment.

[0314] A microlens array 555 is disposed on the optical conversion layer 550. Light passing through each lens included in the microlens array 555 passes through the optical conversion layer 550 directly below and illuminates the photodiode 540. By providing the microlens array 555, the focused light can be incident on the photodiode 540, thus enabling efficient photoelectric conversion. The microlens array 555 is preferably formed of a resin or glass, etc., which has high light transmittance to the target wavelength.

[0315] Next, the process of bonding the layer containing transistor 103 to the layer containing transistor 310 using an bonding layer (layer 208) will be described.

[0316] An insulating layer 529a and conductive layers 531a and 531b are provided on the side where the transistor 103 is located. The conductive layers 531a and 531b include regions embedded in the insulating layer 529a. Furthermore, the surfaces of the insulating layer 529a and the conductive layers 531a and 531b are planarized in a highly uniform manner.

[0317] An insulating layer 529b and conductive layers 532a and 532b are provided on the side where the transistor 310 is located. The conductive layers 532a and 532b include regions embedded in the insulating layer 529b. Furthermore, the surfaces of the insulating layer 529b and the conductive layers 532a and 532b are planarized in a highly consistent manner.

[0318] Here, the main components of conductive layers 531a, 531b, 532a, and 532b are preferably the same metallic elements. Furthermore, insulating layers 529a and 529b are preferably composed of the same components.

[0319] For example, Cu, Al, Sn, Zn, W, Ag, Pt, or Au can be used as conductive layers 531a, 531b, 532a, and 532b. From the viewpoint of ease of bonding, Cu, Al, W, or Au is preferred. Furthermore, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, titanium nitride, etc., can be used as insulating layers 529a and 529b.

[0320] In other words, it is preferable that the same metallic material is used as the conductive layers 531a, 531b, 532a, and 532b. Furthermore, it is preferable that the same insulating material is used as the insulating layers 529a and 529b. By adopting this structure, the layer on which the transistor 103 is disposed and the layer on which the transistor 310 is disposed can be bonded together.

[0321] Furthermore, conductive layers 531a, 531b, 532a, and 532b can also have a multilayer structure with multiple layers, in which case the surface layer (bonding surface) can use the same metal material. Additionally, insulating layers 529a and 529b can also have a multilayer structure with multiple layers, in which case the surface layer (bonding surface) can use the same insulating material.

[0322] This bonding process allows for the connection between conductive layers 531a and 532a, as well as between conductive layers 531b and 532b. Furthermore, sufficient mechanical strength is required to connect insulating layers 529a and 529b.

[0323] When bonding metal layers, surface activation bonding can be used. In this method, bonding occurs by removing oxide films and impurity adsorbed layers from the surface through sputtering or similar processes, resulting in clean and activated surface contacts. Alternatively, diffusion bonding, which uses temperature and pressure to induce surface bonding, can be employed. Both methods allow for atomic-level bonding, thus achieving excellent electrical and mechanical bonding.

[0324] Furthermore, when bonding insulating layers, hydrophilic bonding methods can be used. In this method, after achieving high flatness through polishing, the surfaces that have undergone hydrophilic treatment using oxygen plasma are brought into contact for temporary bonding. Dehydration is then achieved through heat treatment, thereby completing the formal bonding. Hydrophilic bonding also involves atomic-level bonding, thus yielding mechanically superior bonds.

[0325] When insulating layers 529a and 529b are bonded together, since the insulating layer and the metal layer are mixed together on each bonding surface, for example, a combination of surface-activated bonding method and hydrophilic bonding method can be used.

[0326] For example, bonding can be achieved by cleaning the surface after polishing, applying an oxygen-resistant treatment to the metal layer surface, and then performing a hydrophilic treatment. Alternatively, a difficult-to-oxidize metal such as Au can be used as the surface of the metal layer, followed by a hydrophilic treatment. Other bonding methods besides those mentioned above can also be used.

[0327] At least a portion of this embodiment can be implemented in combination with other embodiments and examples described in this specification.

[0328] [Symbol Explanation]

[0329] 15: Panel, 16: Touch sensor, 20: Display device, 21: Optical equipment, 22: Display device, 30: Housing, 35: Holding tool, 40: Pixel, 60: Display unit, 62: Linear polarizer, 63: Phase retardation plate, 64: Semi-reflective mirror, 65: Lens, 66: Phase retardation plate, 67: Reflective polarizer, 68: Lens, 71: Subpixel, 74: Pixel array, 75: Circuit, 76: Circuit, 77: Layer, 78: Layer, 79: Layer, 101: Substrate, 102: Substrate, 103: Transistor, 110: Light-emitting element, 110a: Light-emitting element, 110B: Light-emitting element, 110b: Light-emitting element, 110c: Light-emitting element, 110d: Light-emitting element, 110G 110R: Light-emitting element; 111: Pixel electrode; 111B: Pixel electrode; 111c: Wiring; 111G: Pixel electrode; 111R: Pixel electrode; 112: Organic layer; 112B: Organic layer; 112G: Organic layer; 112R: Organic layer; 112W: Organic layer; 113: Common electrode; 114: Common layer; 121: Protective layer; 122: Planarization layer; 124: Insulating layer; 125: Insulating layer; 126: Resin layer; 127: Convex lens; 128: Layer; 129: Layer; 130: Shaping layer; 130B: Shaping layer; 130G: Shaping layer; 130R: Shaping layer; 131: Wiring mask; 140: Pixel; 141a: Pixel; 141b: Pixel;Pixel, 145: Pixel, 200A: Display panel, 200B: Display panel, 200C: Display panel, 200D: Display panel, 200E: Display panel, 200F: Display panel, 208: Layer, 240: Capacitor, 241: Conductive layer, 243: Insulating layer, 245: Conductive layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 260: Wiring, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 264: Insulating layer, 265: Insulating layer, 271: Plug, 2 74: Plug; 274a: Conductive layer; 274b: Conductive layer; 280: Display module; 281: Display section; 282: Circuit section; 283: Pixel circuit section; 283a: Pixel circuit; 284: Pixel section; 284a: Pixel; 285: Terminal section; 286: Wiring section; 290: FPC; 291: Substrate; 292: Substrate; 301: Substrate; 301A: Substrate; 301B: Substrate; 310: Transistor; 310A: Transistor; 310B: Transistor; 311: Conductive layer; 312: Low resistance region; 313: Insulating layer; 314: Insulating layer; 315: Component separation layer; 320: Crystal. 320A: Transistor; 321: Semiconductor layer; 323: Insulating layer; 324: Conductive layer; 325: Conductive layer; 326: Insulating layer; 327: Conductive layer; 328: Insulating layer; 329: Insulating layer; 331: Substrate; 332: Insulating layer; 335: Insulating layer; 336: Insulating layer; 341: Conductive layer; 342: Conductive layer; 343: Connector; 344: Insulating layer; 345: Insulating layer; 346: Insulating layer; 347: Bump; 348: Adhesive layer; 420: Conductor; 430: Insulator; 440: Wiring; 450: Wiring; 470: Oxide semiconductor; 470i: Region; 470n a: Region, 470nb: Region, 480: Insulator, 490: Opening, 529a: Insulating layer, 529b: Insulating layer, 531a: Conductive layer, 531b: Conductive layer, 532a: Conductive layer, 532b: Conductive layer, 540: Photodiode, 541: Insulating layer, 542: Insulating layer, 543: P-type region, 544: N-type region, 545: Insulating layer, 546: Insulating layer, 550: Optical conversion layer, 550B: Color filter, 550G: Color filter, 550IR: Infrared color filter, 550R: Color filter, 550UV: Ultraviolet color filter, 551: Light-shielding layer, 555: Microlens array

Claims

1. A display device, comprising: A convex lens is mounted on the light-emitting element; A second layer disposed on and in contact with the convex lens; as well as The first layer is disposed on the second layer and in contact with it. Where the refractive index of the first layer is n1, the refractive index of the second layer is n2, and the refractive index of the convex lens is n3, then n1 satisfies the condition... <n2<n3, Furthermore, the convex lens is arranged in pairs with the light-emitting element.

2. The display device according to claim 1, The light-emitting element emits red, green, or blue light.

3. A display device, comprising: A convex lens is mounted on the light-emitting element; A second layer disposed on and in contact with the convex lens; as well as The first layer is disposed on the second layer and in contact with it. Where the refractive index of the first layer is n1, the refractive index of the second layer is n2, and the refractive index of the convex lens is n3, then n1 satisfies the condition... <n2<n3, Furthermore, the convex lens is disposed in each of the plurality of light-emitting elements.

4. The display device according to claim 3, The light-emitting element emits white light, and a coloring layer is included between the light-emitting element and the convex lens.

5. The display device according to claim 3, The light-emitting element has a structure in which an organic layer is sandwiched between the pixel electrode and the common electrode. The common electrode is an electrode shared by multiple light-emitting elements. Furthermore, the common electrode and the convex lens have the same shape when viewed from above.

6. The display device according to claim 5, further comprising a first wiring, The first wiring is connected to the common electrode in the region overlapping with the convex lens.

7. The display device according to claim 3, further comprising adjacent first pixels and second pixels, Both the first pixel and the second pixel include the light-emitting element. The first pixel emits a different color than the second pixel. Furthermore, a gap surrounded by the second layer or a gap surrounded by both the second layer and the first layer is provided between the first pixel and the second pixel.

8. The display device according to any one of claims 1 to 7, The light-emitting element is an organic EL element.

9. The display device according to any one of claims 1 to 7, The second layer is formed of inorganic materials.

10. The display device according to any one of claims 1 to 7, The second layer is formed of organic materials.

11. An electronic device that uses the display device according to any one of claims 1 to 7 as a light source and provides a reflective and refractive optical system on one side of the display surface of the display device.

12. The electronic device according to claim 11, A touch sensor is provided on the side opposite to the display surface of the display device.

Images