A precursor gas supply device for a plasma-enhanced chemical vapor deposition apparatus

Abstract

The present invention relates to a precursor gas supply device of a plasma enhanced chemical vapor deposition (PECVD) apparatus, which can include a first chamber and a second chamber forming a space in which a deposition process is performed, a gas supply pipe connected to a plurality of gas supply sources for the deposition process and the first chamber and the second chamber, a first vaporizer and a second vaporizer respectively provided at both sides inside a gas tank to vaporize the same type of liquid precursor, a first precursor supply pipe connecting the first vaporizer and the gas supply pipe, and a second precursor supply pipe connecting the second vaporizer and the gas supply pipe.

Description

Technical Field

[0001] This invention relates to a precursor gas supply device for a plasma-enhanced chemical vapor deposition (PECVD) apparatus, and more specifically, to a precursor gas supply device for a PECVD apparatus that can cope with more diverse process conditions by utilizing multiple vaporizers. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) refers to the plasma-enhanced chemical vapor deposition process, and the equipment used to perform this process is called plasma-enhanced chemical vapor deposition equipment.

[0003] In semiconductor manufacturing processes, there is a deposition process that forms a thin film on a wafer. The deposition process is a process of feeding a precursor containing a material that serves as the thin film material into a chamber and depositing it on the surface of the wafer. This process is typically performed using plasma-enhanced chemical vapor deposition equipment.

[0004] However, if the precursor material is liquid at room temperature, it needs to be vaporized into a gaseous state. In this case, a vaporization device (vaporizer) is used.

[0005] The precursor gas vaporized in the vaporizer and supplied to the chamber undergoes a chemical reaction within the chamber and is deposited on the wafer.

[0006] In this case, heating is required to bring the reactant gases to a state suitable for chemical reaction within the chamber, and plasma is further used to ionize the reactant gases, thereby further enhancing reactivity. In this case, there is the advantage of being able to carry out the process at relatively low temperatures (advantage of plasma-enhanced chemical vapor deposition).

[0007] On the other hand, such as Figure 1 As shown, the precursor gas supply device of the prior art plasma-enhanced chemical vapor deposition equipment utilizes a vaporizer 40.

[0008] The gas supply pipe 30 of the gas box 20 is connected to chambers 11 and 12. The gas supply pipe 30 branches into a first gas supply pipe 31 and a second gas supply pipe 32, which are connected to the first chamber 11 and the second chamber 12, respectively. Precursor gases and other reactive gases (oxygen, nitrogen, etc.) can be supplied through the gas supply pipe 30.

[0009] The vaporizer 40 is located on one side inside the gas box 20, and a precursor supply pipe 50 is provided for connecting the vaporizer 40 and the gas supply pipe 30. Multiple valves 71, 72, and 73 are provided on the gas supply pipe 30 and the precursor supply pipe 50 for regulating the gas flow rate through the pipes.

[0010] A transfer line 60 may be connected to the precursor supply pipe 50, and a valve 74 is also provided on the transfer line 60.

[0011] The vaporizer 40 is connected to a precursor supply source (not shown) and receives liquid precursor and vaporizes it. The vaporized precursor gas is supplied to chambers 11 and 12 through the precursor supply pipe 50 and the gas supply pipe 30, and chemically combines with other reactive gases in chambers 11 and 12 to deposit on the wafer surface, thereby forming a thin film.

[0012] However, the precursor gas supply device of the prior art plasma-enhanced chemical vapor deposition equipment has the limitation of not being able to flexibly cope with various deposition process conditions because it uses a vaporizer 40.

[0013] Furthermore, the design and configuration of the vaporizer 40 are adapted to the deposition rate required by the deposition process. Therefore, when the required deposition rate changes, i.e., if a process requiring a different deposition rate is to be performed, the vaporizer 40 needs to be replaced.

[0014] Prior art refers to technical information that the inventor possesses in order to derive this invention, or that is obtained in the process of deriving this invention, and is not necessarily publicly known technology that was disclosed to the general public before the application for this invention.

[0015] Existing technical documents

[0016] Patent documents

[0017] Patent Document 1: Korean Patent Publication No. 10-2022-0122434 (published on September 2, 2022) Summary of the Invention

[0018] Technical issues

[0019] To address the aforementioned problems, the present invention aims to provide a precursor gas supply device for a plasma-enhanced chemical vapor deposition (PECVD) apparatus, which can adjust the supply amount of precursor gas within a wide range, thereby enabling more flexible handling of various process conditions without the need to replace the vaporizer.

[0020] The problems to be solved by the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand from the following description other problems not mentioned.

[0021] Problem-solving methods

[0022] The precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus of this invention includes: a first chamber and a second chamber, forming a space for implementing the deposition process; a gas supply pipe, connecting a plurality of gas supply sources for the deposition process to the first chamber and the second chamber; a first vaporizer and a second vaporizer, respectively disposed on both sides inside the gas chamber, respectively vaporizing liquid precursors of the same type; a first precursor supply pipe, connecting the first vaporizer and the gas supply pipe; and a second precursor supply pipe, connecting the second vaporizer and the gas supply pipe.

[0023] Furthermore, the gas supply pipe branches into a first gas supply pipe and a second gas supply pipe. The first gas supply pipe is connected to the first chamber, and the second gas supply pipe is connected to the second chamber. A main valve is provided upstream of the branch point of the first gas supply pipe and the second gas supply pipe.

[0024] Furthermore, the first precursor supply pipe branches into a first branch pipe and a second branch pipe. The first branch pipe of the first precursor supply pipe is connected to the upstream portion of the main valve of the gas supply pipe, and the second branch pipe of the first precursor supply pipe is connected to the first gas supply pipe. A first three-way valve is provided at the branch point of the first branch pipe and the second branch pipe of the first precursor supply pipe. The second precursor supply pipe branches into a first branch pipe and a second branch pipe. The first branch pipe of the second precursor supply pipe is connected to the upstream portion of the main valve of the gas supply pipe, and the second branch pipe of the second precursor supply pipe is connected to the second gas supply pipe. A second three-way valve is provided at the branch point of the first branch pipe and the second branch pipe of the second precursor supply pipe.

[0025] Furthermore, according to the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus, the first vaporizer can be operated and the second vaporizer can be stopped. The first three-way valve is opened toward the second branch pipe side of the first precursor supply pipe, so that the precursor gas discharged from the first vaporizer is equally supplied to the first chamber and the second chamber.

[0026] Furthermore, according to the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus, the second vaporizer can be operated, the first vaporizer can be stopped, and the second three-way valve can be opened toward the second branch pipe side of the second precursor supply pipe, so that the precursor gas discharged from the second vaporizer is equally supplied to the first chamber and the second chamber.

[0027] Furthermore, according to the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus, both the first vaporizer and the second vaporizer can operate. The first three-way valve is open toward the first branch pipe side of the first precursor supply pipe, and the second three-way valve is open toward the first branch pipe side of the second precursor supply pipe, so that the precursor gases discharged from the first vaporizer and the second vaporizer are combined and supplied equally to the first chamber and the second chamber.

[0028] Furthermore, according to the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus, both the first vaporizer and the second vaporizer can operate. The first three-way valve is open toward the second branch pipe side of the first precursor supply pipe, and the second three-way valve is open toward the second branch pipe side of the second precursor supply pipe, thereby supplying the precursor gas discharged from the first vaporizer to the first chamber and supplying the precursor gas discharged from the second vaporizer to the second chamber.

[0029] The effects of the invention

[0030] As described above, the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus of the present invention can adjust the supply amount of precursor gas within a wide range, thus enabling more flexible handling of various process conditions without replacing the vaporizer.

[0031] The effects of the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand other effects not mentioned from the following description. Attached Figure Description

[0032] Figure 1 This is a structural diagram of the precursor gas supply device for a plasma-enhanced chemical vapor deposition (PECVD) apparatus in the prior art.

[0033] Figure 2 This is a structural diagram of the precursor gas supply device for a plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0034] Figures 3 to 6 This is a diagram illustrating the usage state of the precursor gas supply device in the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention. Figure 3To illustrate the state diagram with only the first carburetor operating, Figure 4 To illustrate the state diagram with only the second carburetor operating, Figure 5 This diagram illustrates a state where both the first and second vaporizers are operating and the precursor gases discharged from both vaporizers are combined and supplied to the chamber. Figure 6 This diagram illustrates a state where both the first and second vaporizers are operating, but the precursor gas discharged from each vaporizer is supplied to the first and second chambers, respectively.

[0035] (Explanation of reference numerals in the attached diagram)

[0036] 110: First chamber; 120: Second chamber

[0037] 200: Gas box; 300: Gas supply pipe

[0038] 310: First gas supply pipe; 320: Second gas supply pipe

[0039] 410: First vaporizer; 420: Second vaporizer

[0040] 510: First precursor supply pipe; 511: First branch pipe

[0041] 512: Second branch pipe; 520: Second precursor supply pipe

[0042] 521: First branch pipe; 522: Second branch pipe

[0043] 600: Transfer line; 610: First transfer line

[0044] 620: Second transfer pipe; 710: Main valve

[0045] 720: First three-way valve; 730: Second three-way valve

[0046] 740: First transfer valve; 750: Second transfer valve Detailed Implementation

[0047] In this invention, the accompanying drawings may be exaggerated to facilitate differentiation from, clarity of, and mastery of the prior art. Furthermore, the terminology used below is defined in consideration of the functionality within this invention and may vary depending on the intent or convention of the user or operator; therefore, these terms should be defined based on the technical content of the entire specification. On the other hand, the embodiments are merely exemplary examples of structural elements presented within the scope of this invention and do not limit the scope of the invention, which should be interpreted based on the technical concept presented in the entire specification.

[0048] In the full text of the specification, when a structure "includes" another structure, unless specifically opposed, it means that other structures may also be included, without excluding the remaining structures.

[0049] Furthermore, when one structure is "connected," "linked," or "combined" with another structure, it implies a situation of "direct connection," "direct linking," or "direct combination," and it can also mean "connected with other structures in between," "linked with other structures in between," or "combined with other structures in between." Conversely, when one structure is "directly connected," "directly linked," or "directly combined" with another structure, it should be understood that there are no other structures in between.

[0050] Furthermore, when directional terms such as “front,” “back,” “up,” “down,” “left,” “right,” “one end,” “the other end,” and “both ends” are used, they are used exemplarily in relation to the direction of the disclosed diagram and therefore cannot be interpreted restrictively. When terms such as “first” and “second” are used, they are terms used to distinguish the various structures and cannot be interpreted restrictively.

[0051] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well known to those skilled in the art to which the following embodiments pertain are omitted. Furthermore, detailed descriptions of portions of the figures unrelated to the description of the embodiments are omitted.

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0053] Figure 2 This is a structural diagram of the precursor gas supply device for a plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention. Figures 3 to 6 This is a diagram illustrating the usage state of the precursor gas supply device in the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention. Figure 3 To illustrate the state diagram with only the first carburetor operating, Figure 4 To illustrate the state diagram with only the second carburetor operating, Figure 5 This diagram illustrates a state where both the first and second vaporizers are operating and the precursor gases discharged from both vaporizers are combined and supplied to the chamber. Figure 6 This diagram illustrates a state where both the first and second vaporizers are operating, but the precursor gas discharged from each vaporizer is supplied to the first and second chambers, respectively.

[0054] Reference Figures 2 to 6The precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus of the present invention includes a first chamber 110, a second chamber 120, a gas supply pipe 300, a first vaporizer 410, a second vaporizer 420, a first precursor supply pipe 510, and a second precursor supply pipe 520.

[0055] According to one embodiment, the first chamber 110 and the second chamber 120 are configured to form a space for carrying out a deposition process.

[0056] According to one embodiment, the first chamber 110 is formed on one side of the chamber body of a dual-chamber plasma-enhanced chemical vapor deposition apparatus, and the second chamber 120 is formed on the other side of the chamber body. The first chamber 110 and the second chamber 120 are formed to the same size and shape.

[0057] According to one embodiment, a wafer is fed into the first chamber 110 and the second chamber 120, and a thin film is deposited on the surface of the wafer by a chemical reaction under vacuum and plasma conditions.

[0058] According to one embodiment, the gas supply pipe 300 is configured to connect a gas supply source storing a plurality of gases for the deposition process and the first chamber 110 and the second chamber 120.

[0059] According to one embodiment, the gas supply pipe 300 is configured such that it passes through the gas box 200 of the plasma-enhanced chemical vapor deposition equipment, with one end connected to a gas supply source that stores gases such as oxygen (O2) and nitrogen (N2), and the other end connected to the first chamber 110 and the second chamber 120.

[0060] According to one embodiment, the gas box 200 is the space through which various process gas piping used in the plasma-enhanced chemical vapor deposition equipment passes, and is configured to have multiple gas piping; valves for opening or closing each gas piping, controlling flow rate, controlling pressure; mass flow controller (MFC); regulator, etc., to facilitate gas supply and management.

[0061] According to one embodiment, the gas supply pipe 300 branches into two at a predetermined point, forming a first gas supply pipe 310 and a second gas supply pipe 320. The first gas supply pipe 310 is connected to the first chamber 110, and the second gas supply pipe 320 is connected to the second chamber 120.

[0062] According to one embodiment, the gas supply pipe 300 branches into a first gas supply pipe 310 and a second gas supply pipe 320. The first gas supply pipe 310 is connected to the first chamber 110, and the second gas supply pipe 320 is connected to the second chamber 120. Furthermore, a main valve 710 is located upstream of the branch point of the first gas supply pipe 310 and the second gas supply pipe 320.

[0063] According to one embodiment, the main valve 710 can be manually or automatically controlled to open or close the gas supply pipe 300, or to regulate the flow rate of the gas flowing along the gas supply pipe 300.

[0064] According to one embodiment, the first vaporizer 410 and the second vaporizer 420 are configured to be disposed on both sides inside the gas box 200, respectively, to vaporize the same type of liquid precursor.

[0065] According to one embodiment, the first vaporizer 410 is disposed on one side inside the gas box 200 and connected to a liquid precursor supply source (not shown) to receive liquid precursor.

[0066] According to one embodiment, the second vaporizer 420 is disposed on the other side inside the gas box 200 and connected to the liquid precursor supply source, receiving the same liquid precursor as the first vaporizer 410.

[0067] According to one embodiment, the first vaporizer 410 and the second vaporizer 420 can vaporize the liquid precursor in various ways. For example, after the liquid precursor is atomized using an ultrasonic vibrator, the atomized fine droplets can be heated to complete vaporization.

[0068] According to one embodiment, the first vaporizer 410 and the second vaporizer 420 may have the same vaporization performance (e.g., vaporization capacity) or different performance.

[0069] For example, the first vaporizer 410 may have a small vaporization capacity, and the second vaporizer 420 may have a medium vaporization capacity. In this case, when the deposition process in the first chamber 110 and the second chamber 120 requires a low deposition rate, the precursor gas can be supplied by operating only the first vaporizer 410. According to one embodiment, when a medium deposition rate is required, the precursor gas can be supplied by operating only the second vaporizer 420; when a high deposition rate is required, the precursor gas generated from both sides can be supplied by operating both the first vaporizer 410 and the second vaporizer 420.

[0070] According to one embodiment, the first precursor supply pipe 510 is configured to connect the first vaporizer 410 and the gas supply pipe 300.

[0071] According to one embodiment, the first precursor supply pipe 510 is branched into a first branch pipe 511 and a second branch pipe 512. The first branch pipe 511 of the first precursor supply pipe 510 is connected to the upstream portion of the main valve 710 of the gas supply pipe 300, and the second branch pipe 512 of the first precursor supply pipe 510 is connected to the first gas supply pipe 310. A first three-way valve 720 is provided at the branch point of the first branch pipe 511 and the second branch pipe 512 of the first precursor supply pipe 510.

[0072] According to one embodiment, the first three-way valve 720 serves to switch the flow path of the first precursor supply pipe 510 to the first branch pipe 511 or the second branch pipe 512, and can be operated and controlled manually or automatically.

[0073] According to one embodiment, depending on the operating state of the first three-way valve 720, the movement path of the precursor gas discharged from the first vaporizer 410 changes. By operating and controlling the second three-way valve 730 together, the precursor gas can be supplied to the first chamber 110 and the second chamber 120 under various conditions.

[0074] According to one embodiment, the second precursor supply pipe 520 is configured to connect the second vaporizer 420 and the gas supply pipe 300.

[0075] According to one embodiment, the second precursor supply pipe 520 is branched into a first branch pipe 521 and a second branch pipe 522. The first branch pipe 521 of the second precursor supply pipe 520 is connected to the upstream portion of the main valve 710 of the gas supply pipe 300, and the second branch pipe 522 of the second precursor supply pipe 520 is connected to the second gas supply pipe 320. A second three-way valve 730 is provided at the branch point of the first branch pipe 521 and the second branch pipe 522 of the second precursor supply pipe 520.

[0076] According to one embodiment, the second three-way valve 730 is a valve that switches the flow path of the second precursor supply pipe 520 to the first branch pipe 521 or the second branch pipe 522.

[0077] Therefore, the movement path of the precursor gas discharged from the second vaporizer 420 changes depending on the operating state of the second three-way valve 730. Furthermore, by operating and controlling it in conjunction with the first three-way valve 720, precursor gas can be supplied to the first chamber 110 and the second chamber 120 under various conditions.

[0078] According to one embodiment, unspecified reference numeral 600 denotes a precursor gas diverting line, which is a piping line for bypassing precursor gases not supplied to the first chamber 110 and the second chamber 120. The diverting line 600 may include a first diverting pipe 610 connected to the first vaporizer 410 and a second diverting pipe 620 connected to the second vaporizer 420. Furthermore, a first diverting valve 740 and a second diverting valve 750 may be provided in the first diverting pipe 610 and the second diverting pipe 620 to enable opening or closing of each pipe.

[0079] According to one embodiment, the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus can operate in the following four ways.

[0080] like Figure 3 As shown, in the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention, the first vaporizer 410 is in operation, the second vaporizer 420 is stopped, and the first three-way valve 720 is open toward the second branch pipe 512 side of the first precursor supply pipe 510, so that the precursor gas discharged from the first vaporizer 410 can be equally supplied to the first chamber 110 and the second chamber 120.

[0081] According to one embodiment, the precursor gas vaporized in the first vaporizer 410 is introduced into the first gas supply pipe 310 through the second branch pipe 512 of the first precursor supply pipe 510. In this case, since the first gas supply pipe 310 and the second gas supply pipe 320 are interconnected, the precursor gas supplied from the first vaporizer 410 can be supplied to the first chamber 110 and the second chamber 120 in the same amount through the first gas supply pipe 310 and the second gas supply pipe 320 (ignoring the slight flow rate difference caused by the resistance due to the difference in distance between the gas introduction location and each chamber).

[0082] According to one embodiment, when the first vaporizer 410 has a small vaporization capacity, the second vaporizer 420 has a medium vaporization capacity, and the deposition process performed in the first chamber 110 and the second chamber 120 requires a low deposition rate, the required low deposition rate conditions can be addressed by operating only the first vaporizer 410 and supplying the precursor gas discharged therefrom to the first chamber 110 and the second chamber 120.

[0083] And, as Figure 4As shown, in the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention, the second vaporizer 420 is in operation, the first vaporizer 410 is stopped, and the second three-way valve 730 is open toward the second branch pipe 522 side of the second precursor supply pipe 520, so that the precursor gas discharged from the second vaporizer 420 can be supplied to the first chamber 110 and the second chamber 120 in the same amount.

[0084] According to one embodiment, the precursor gas vaporized in the second vaporizer 420 is introduced into the second gas supply pipe 320 through the second branch pipe 522 of the second precursor supply pipe 520. In this case, since the first gas supply pipe 310 and the second gas supply pipe 320 are interconnected, the precursor gas supplied from the second vaporizer 420 can be supplied to the first chamber 110 and the second chamber 120 in the same amount through the first gas supply pipe 310 and the second gas supply pipe 320 (ignoring the slight flow rate difference caused by the resistance due to the difference in distance between the gas introduction location and each chamber).

[0085] Therefore, when the first vaporizer 410 has a small vaporization capacity, the second vaporizer 420 has a medium vaporization capacity, and the deposition process performed in the first chamber 110 and the second chamber 120 requires a medium deposition rate, as described above, the required medium deposition rate conditions can be met by operating only the second vaporizer 420 and supplying the precursor gas discharged therefrom to the first chamber 110 and the second chamber 120.

[0086] And, as Figure 5 As shown, in the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention, both the first vaporizer 410 and the second vaporizer 420 are in operation. The first three-way valve 720 is open toward the first branch pipe 511 side of the first precursor supply pipe 510, and the second three-way valve 730 is open toward the first branch pipe 521 side of the second precursor supply pipe 520, so that the precursor gases discharged from the first vaporizer 410 and the second vaporizer 420 can be combined and supplied to the first chamber 110 and the second chamber 120 in the same amount.

[0087] According to one embodiment, the precursor gas vaporized in the first vaporizer 410 is introduced into the upstream portion of the main valve 710 of the gas supply pipe 300 through the first branch pipe 511 of the first precursor supply pipe 510, and the precursor gas vaporized in the second vaporizer 420 is introduced into the upstream portion of the main valve 710 of the gas supply pipe 300 through the first branch pipe 521 of the second precursor supply pipe 520.

[0088] According to one embodiment, the precursor gas discharged from the first vaporizer 410 and the precursor gas discharged from the second vaporizer 420 converge in the gas supply pipe 300, and then branch off through the main valve 710 to both sides of the first gas supply pipe 310 and the second gas supply pipe 320, and are respectively supplied to the first chamber 110 and the second chamber 120.

[0089] Therefore, when the first vaporizer 410 has a small vaporization capacity, the second vaporizer 420 has a medium vaporization capacity, and the deposition process in the first chamber 110 and the second chamber 120 requires a high deposition rate, the required high deposition rate conditions can be met by operating both the first vaporizer 410 and the second vaporizer 420 and supplying the precursor gas discharged therefrom to the first chamber 110 and the second chamber 120.

[0090] Finally, as Figure 6 As shown, in the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus according to an embodiment of the present invention, both the first vaporizer 410 and the second vaporizer 420 are in operation. The first three-way valve 720 is open toward the second branch pipe 512 of the first precursor supply pipe 510, and the second three-way valve 730 is open toward the second branch pipe 522 of the second precursor supply pipe 520, thereby supplying the precursor gas discharged from the first vaporizer 410 to the first chamber 110 and supplying the precursor gas discharged from the second vaporizer 420 to the second chamber 120.

[0091] According to one embodiment, the precursor gas discharged from the first vaporizer 410 is introduced into the first gas supply pipe 310 through the second branch pipe 512 of the first precursor supply pipe 510, and the precursor gas discharged from the second vaporizer 420 is introduced into the second gas supply pipe 320 through the second branch pipe 522 of the second precursor supply pipe 520.

[0092] In this case, the first gas supply pipe 310 and the second gas supply pipe 320 are connected to each other. However, since the precursor gas is introduced into the first gas supply pipe 310 and the second gas supply pipe 320 at the same time, the two gas flows collide and stop near the branch point of the two pipes. The precursor gas supplied from the first vaporizer 410 flows towards the first chamber 110 side of the first gas supply pipe 310, and the precursor gas supplied from the second vaporizer 420 flows towards the second chamber 120 side of the second gas supply pipe 320.

[0093] Therefore, the precursor gas discharged from the first vaporizer 410 is supplied to the first chamber 110 through the second branch pipe 512 of the first precursor supply pipe 510 and the first gas supply pipe 310, and the precursor gas discharged from the second vaporizer 420 is supplied to the second chamber 120 through the second branch pipe 522 of the second precursor supply pipe 520 and the second gas supply pipe 320.

[0094] Therefore, when the first vaporizer 410 has a small vaporization capacity, the second vaporizer 420 has a medium vaporization capacity, the first chamber 110 requires a low deposition rate, and the second chamber 120 requires a medium deposition rate, the different deposition rate conditions required by each chamber can be addressed by supplying the precursor gas discharged from the first vaporizer 410 to the first chamber 110 and the precursor gas discharged from the second vaporizer 420 to the second chamber 120.

[0095] As described above, the precursor gas supply device of the plasma-enhanced chemical vapor deposition apparatus of the present invention can supply precursor gas to the first chamber and the second chamber together or separately using two vaporizers and multiple branch pipes connected to each vaporizer. Furthermore, the supply amount of precursor gas can be adjusted within a wider range, thereby enabling more flexible responses to changes in deposition rate required by the deposition process without the need to replace the vaporizers.

[0096] As described above, the present invention has been illustrated with reference to the embodiments shown in the figures. However, it should be understood that these are merely exemplary, and various modifications and equivalent embodiments are possible based on common knowledge in the art to which this invention pertains. Therefore, the true scope of protection of this invention is based on the appended claims and should be determined according to the specific content of the invention described above.

[0097] Industrial availability

[0098] This invention relates to a precursor gas supply device for a plasma-enhanced chemical vapor deposition (PECVD) apparatus, which can be used in industries related to dual-chamber PECVD apparatuses.

Claims

1. A precursor gas supply device for a plasma-enhanced chemical vapor deposition (PECVD) apparatus, characterized in that, include: The first and second chambers form the space for carrying out the deposition process; A gas supply pipe connects multiple gas supply sources for the deposition process to the first chamber and the second chamber; The first vaporizer and the second vaporizer are respectively located on both sides inside the gas box, and respectively vaporize the same type of liquid precursor; A first precursor supply pipe is connected to the first vaporizer and the gas supply pipe; as well as The second precursor supply pipe connects the second vaporizer and the gas supply pipe.

2. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 1, characterized in that, The gas supply pipe branches into a first gas supply pipe and a second gas supply pipe. The first gas supply pipe is connected to the first chamber. The second gas supply pipe is connected to the second chamber. A main valve is installed upstream of the branch points of the first gas supply pipe and the second gas supply pipe.

3. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 2, characterized in that, The first precursor supply pipe branches into a first branch pipe and a second branch pipe. The first branch pipe of the first precursor supply pipe is connected to the upstream portion of the main valve of the gas supply pipe, and the second branch pipe of the first precursor supply pipe is connected to the first gas supply pipe. A first three-way valve is provided at the branch point of the first branch pipe and the second branch pipe of the first precursor supply pipe. The second precursor supply pipe is divided into a first branch pipe and a second branch pipe. The first branch pipe of the second precursor supply pipe is connected to the upstream part of the main valve of the gas supply pipe, and the second branch pipe of the second precursor supply pipe is connected to the second gas supply pipe. A second three-way valve is provided at the branch point of the first branch pipe and the second branch pipe of the second precursor supply pipe.

4. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 3, characterized in that, The first vaporizer is operated, the second vaporizer is stopped, and the first three-way valve is opened toward the second branch pipe side of the first precursor supply pipe, so that the precursor gas discharged from the first vaporizer is equally supplied to the first chamber and the second chamber.

5. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 3, characterized in that, The second vaporizer is operated, the first vaporizer is stopped, and the second three-way valve is opened toward the second branch pipe side of the second precursor supply pipe, so that the precursor gas discharged from the second vaporizer is equally supplied to the first chamber and the second chamber.

6. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 3, characterized in that, Both the first vaporizer and the second vaporizer are in operation. The first three-way valve is open toward the first branch pipe side of the first precursor supply pipe, and the second three-way valve is open toward the first branch pipe side of the second precursor supply pipe, so that the precursor gases discharged from the first vaporizer and the second vaporizer are combined and supplied equally to the first chamber and the second chamber.

7. The precursor gas supply device for the plasma-enhanced chemical vapor deposition apparatus according to claim 3, characterized in that, Both the first vaporizer and the second vaporizer are in operation. The first three-way valve is open toward the second branch pipe side of the first precursor supply pipe, and the second three-way valve is open toward the second branch pipe side of the second precursor supply pipe, thereby supplying the precursor gas discharged from the first vaporizer to the first chamber and supplying the precursor gas discharged from the second vaporizer to the second chamber.

Images