A low power temperature sensor and related apparatus
By designing a low-power temperature sensor, utilizing a MOS transistor operating in the subthreshold region and a self-biased structure, high-precision temperature-to-digital conversion is achieved over a wide temperature range, solving the problem of high power consumption in existing temperature sensors. This technology is suitable for scenarios such as IoT terminals, portable medical devices, and system-on-a-chip thermal management.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGZHOU UNIVERSITY
- Filing Date
- 2026-01-22
- Publication Date
- 2026-06-09
AI Technical Summary
Existing temperature sensors based on MOS temperature sensing have high power consumption, short battery life, and difficulty in achieving high-precision temperature-to-digital conversion over a wide temperature range.
The design employs a low-power temperature sensor, including a temperature sensing module, a current-to-frequency conversion module, and a frequency-to-digital conversion module. It utilizes a MOSFET operating in the subthreshold region and a self-biased structure to achieve high-precision temperature measurement over a wide temperature range through a current-to-frequency-to-digital signal conversion link.
High-precision temperature-to-digital conversion is achieved over a wide temperature range under low power consumption constraints, resulting in reduced power consumption and improved temperature measurement accuracy. It is suitable for scenarios such as IoT terminals, portable medical devices, and system-on-a-chip thermal management.
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Figure CN122171043A_ABST