An optical chip, optical module, optical communication device and manufacturing method

By replacing the substrate using a bonding process in the lithium niobate thin film electro-optic modulator, the impedance matching problem between the lithium niobate thin film and the semiconductor substrate was solved, thereby reducing RF signal loss and increasing modulation bandwidth, ensuring chip reliability and process compatibility.

CN122172471APending Publication Date: 2026-06-09HUAWEI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUAWEI TECH CO LTD
Filing Date
2024-12-06
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In electro-optic modulators based on lithium niobate thin films, it is difficult to achieve impedance matching between the lithium niobate thin film and the semiconductor substrate, which leads to increased RF signal loss and affects modulation bandwidth. At the same time, traditional impedance matching methods affect chip reliability and process compatibility.

Method used

By replacing the substrate through bonding, and selecting a material with a dielectric constant less than or equal to 10 and a resistivity greater than or equal to 10KΩ/cm as the new substrate, impedance matching between the lithium niobate thin film and the semiconductor substrate can be achieved, reducing RF signal loss and increasing modulation bandwidth.

Benefits of technology

Effective impedance matching between the lithium niobate thin film and the semiconductor substrate was achieved, reducing RF signal loss, increasing the modulation bandwidth of the electro-optic modulator, and ensuring chip reliability and process compatibility.

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Abstract

The application provides a kind of optical chip, optical module, optical communication equipment and preparation method, and the optical chip includes lithium niobate layer, buried oxygen layer and substrate from top to bottom, wherein: the lithium niobate layer is provided with electro-optic modulator;Buried oxygen layer is provided with integrated waveguide structure, and electro-optic modulator is used to modulate the signal light transmitted in integrated waveguide structure;Substrate is bonded between buried oxygen layer, and substrate satisfies at least one or more conditions: dielectric constant is less than or equal to 10;Or resistance is greater than or equal to 10KΩ / cm. That is, the flexible selection of the substrate of the optical chip is realized by bonding technology, so that the impedance matching of lithium niobate film and new substrate is realized, the loss of radio frequency signal is reduced, and the modulation bandwidth of electro-optic modulator is improved.
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