Sensor device and method for manufacturing a sensor device

Abstract

The invention relates to a sensor device and a method for producing a sensor device. The sensor device comprises a sensor chip having at least one sensor element, which is arranged on a front side of the sensor chip and is designed to detect a physical variable; an electrically insulating material, which is arranged on the front side of the sensor chip and surrounds the at least one sensor element; and an electrically insulating layer, which is arranged on a rear side of the sensor chip, which is opposite the front side.

Description

Technical Field

[0001] This invention relates to sensor devices and methods for manufacturing sensor devices. Background Technology

[0002] In sensor devices, high voltage differences can occur between the various components. In current sensors, for example, an even higher potential difference can be generated between the conductive rail and the sensor chip disposed thereon. Depending on the material properties and the relative arrangement of the components, this higher voltage difference can result in very high electric field strength in specific spatial regions of the corresponding sensor device. Due to the high electric field strength, the components disposed there can suffer high wear, which can lead to device failure in the worst case. Conventional solutions for isolating components located at different potentials are typically costly and expensive.

[0003] It may be of interest to manufacturers and developers of sensor devices to solve the aforementioned technical problems in order to extend the lifespan of the devices and ensure their continued safe operation. Simultaneously, it may be desirable to provide inexpensive and efficient methods for manufacturing improved sensor devices. Summary of the Invention

[0004] Different aspects relate to sensor devices. A sensor device includes a sensor chip having at least one sensor element disposed on the front side of the sensor chip and designed for detecting physical parameters. The sensor device also includes an electrically insulating material disposed on the front side of the sensor chip, the electrically insulating material surrounding at least one sensor element. The sensor device also includes an electrically insulating layer disposed on the rear side of the sensor chip opposite the front side.

[0005] Different aspects relate to methods for manufacturing sensor devices. The method includes fabricating a plurality of sensor elements on the front side of a semiconductor wafer, wherein the sensor elements are designed to detect physical parameters. The method also includes constructing an electrically insulating material on the front side of the semiconductor wafer, wherein the electrically insulating material surrounds at least one of the plurality of sensor elements. The method further includes constructing an electrically insulating layer on the rear side of the semiconductor wafer opposite to the front side. The method also includes separating the semiconductor wafer into a plurality of sensor devices.

[0006] Further features and advantages of the invention will be recognized by those skilled in the art upon reading the following detailed description and upon viewing the accompanying drawings. Attached Figure Description

[0007] The invention is illustrated, by way of example and without limitation, in the accompanying drawings, in which the same reference numerals may refer to similar or identical elements. Elements in the drawings are not necessarily drawn to scale. Features of the different examples shown may be combined unless they are mutually exclusive.

[0008] Figure 1 A perspective view of the sensor device 100 is shown schematically.

[0009] Figure 2 contains Figure 2A and Figure 2B These schematically illustrate a cross-sectional side view and a top view of the sensor device 200 according to the invention.

[0010] Figure 3 A schematic cross-sectional side view of the sensor device 300 according to the present invention is shown.

[0011] Figure 4 A schematic cross-sectional side view of the sensor device 400 according to the present invention is shown.

[0012] Figure 5 A schematic cross-sectional side view of a sensor device 500 according to the present invention is shown.

[0013] Figure 6 A schematic cross-sectional side view of a sensor device 600 according to the present invention is shown.

[0014] Figure 7 A flowchart is shown for a method of manufacturing a sensor device according to the present invention. Detailed Implementation

[0015] exist Figure 1 First, the functional principle of the sensor device 100 is described qualitatively and exemplary. The sensor device 100 may have a conductive chip carrier 2 and a sensor chip 4 disposed thereon. The sensor chip 4 may, for example, be a magnetic field sensor chip with at least one sensor element 6. Figure 1 In a specific example, sensor chip 4 can be a differential magnetic field sensor chip with two Hall sensor elements 6A and 6B.

[0016] The conductive carrier 2 can function as a conductive rail and is designed to guide the electrical measuring current 8. In the example shown, the chip carrier 2, or the conductive rail constructed therefrom, can have recesses on two sides, allowing the measuring current 8 to have a generally S-shaped trajectory around the two sensor elements 6A, 6B. The measuring current 8 generates a magnetic field at the locations of the sensor elements 6A, 6B. The sensor chip 4 can be designed to detect the induced magnetic field at the locations of the sensor elements 6A, 6B. The strength of the measuring current 8 can be determined based on the detected magnetic field (or based on an associated differential measurement signal). Therefore, the sensor chip 4 or the sensor device 100 can also be referred to as a current sensor.

[0017] The sensor device 200 in Figure 2 can have Figure 1 The sensor device 100 may have one or more features. The sensor device 200 may have a sensor chip 4 with at least one sensor element 6 disposed on the front side 10 of the sensor chip 4 and designed to detect physical parameters. Furthermore, the sensor device 200 may have an electrically insulating material 12 disposed on the front side 10 of the sensor chip 4, surrounding at least one sensor element 6. The sensor device 100 may also include an electrically insulating layer 16 disposed on the rear side 14 of the sensor chip 4 opposite the front side 10. In the illustrated example, the sensor device 200 may have a conductive chip carrier 2, wherein the sensor chip 4 may be disposed above a segment 18 of the chip carrier 2. In some examples, the chip carrier 2 may be considered part of the sensor device 200, while in other examples, the chip carrier is not necessarily part of the sensor device 200.

[0018] The conductive chip carrier 2 can be, for example, a leadframe. The leadframe 2 can be made of metal and / or metal alloys, particularly at least one of copper, copper alloys, nickel, nickel-iron, aluminum, aluminum alloys, steel, stainless steel, etc. The carrier section 18 can be a conductive section of the chip carrier 2. In the example shown, the chip carrier section 18 of the leadframe 2 can particularly include or correspond to a conductive rail. The conductive rail 18 can be designed to guide a current 8, which should be detected or measured by the sensor chip 4. Here, the conductive rail 18 can be designed such that the measuring current 8 generates a magnetic field at the location of at least one sensor element 6 that can be measured by at least one sensor element 6. The conductive rail 18 can particularly be integrally constructed or manufactured. In the example shown, the conductive rail 18 is similar to... Figure 1 The example may have recesses on both sides. The second segment 20 of the lead frame 2 may have one or more connecting conductors (or leads, lead fingers, or pins). Figure 2A In the side cross-sectional view, only a single connecting conductor 20 is visible due to the selected viewing angle. However, any number of additional connecting conductors can be arranged behind the shown connecting conductor 20.

[0019] The sensor chip 4 can be fixed to the mounting surface of the conductive rail 18 by an adhesive material (or adhesive layer) 26, wherein, in the example shown, the rear side 14 of the sensor chip 4 can face the upper side of the conductive rail 18. The adhesive material 26 can be, for example, an electrically insulating adhesive. The sensor chip 4 (or at least one sensor element 6 thereof) can be designed to detect physical parameters. Here, the sensor chip 4 and its sensor element 6 are not necessarily limited to detecting a specific or only single physical quantity. At least one sensor element 6 can be designed, for example, to detect at least one of magnetic fields, voltage, temperature, pressure, humidity, motion, acceleration, distance, light, gas, etc. In the example shown, the sensor element 6 can be designed to detect a magnetic field, which is generated, in particular, by a measuring current 8 flowing through the conductive rail 18. The strength of the measuring current 8 can be determined based on the detected magnetic field (or the detected magnetic flux density of the induced magnetic field).

[0020] The induced magnetic field can be measured, in particular, without physical contact between the sensor chip 4 and the conductive rail 18 (i.e., with current separation). In this case, the sensor chip 4 (or more precisely, at least one sensor element 6 of the sensor chip 4) can be at least partially overlapped with the conductive rail 18 when viewed in the vertical direction. The physical signal detected by the sensor chip 4 or the sensor element 6 can be converted into an electrical signal and further guided via the electrical connection element 22 and the connecting conductor 20 to another component (not shown) for further processing or evaluation. Alternatively, the processing or evaluation can also be performed at least partially by the sensor chip 4. In the example shown, the electrical connection element 22 may correspond to or include a wire. Alternatively or additionally, in other examples, the electrical connection element 22 may include a clip, a strap, etc.

[0021] Generally, the sensor chip 4 and its sensor element 6 are not limited to a specific sensor technology. The sensor element 6 of the sensor chip 4 can be, for example, a Hall sensor element, a magnetoresistive sensor element, a vertical Hall sensor element, or a fluxgate sensor element. The magnetoresistive xMR sensor element can be an AMR (anisotropic magnetoresistive) sensor element, a GMR (giant magnetoresistive) sensor element, or a TMR (tunneling magnetoresistive) sensor element. In an example, the sensor chip 4 can be a differential magnetic field sensor chip with two Hall sensor elements. Here, the Hall sensor elements can be sensitive in a direction perpendicular to the front side 10 of the chip. In another example, the sensor chip 4 can contain a single magnetoresistive sensor element 6 (e.g., an AMR sensor element, a GMR sensor element, or a TMR sensor element). Here, the magnetoresistive sensor element can be sensitive in a direction parallel to the front side 10 of the chip. The shape of the conductive rail 18 and, consequently, the direction of the measuring current 8, can be selected according to the sensitivity direction of at least one sensor element 6 to achieve sufficient signal strength at the location of the sensor element 6.

[0022] It should be noted that, for simplicity, only a single sensor element 6 of the sensor chip 4 is shown in the example illustrated. However, it is clear that in other examples, the sensor chip 4 may have one or more additional sensor elements, which may be surrounded by the electrically insulating material 12 of the front side 10 of the sensor chip 4. Here, the functions of the sensor elements may differ from each other. In a non-limiting and illustrative example, the sensor chip 4 may have a sensor element for measuring a magnetic field and additional sensor elements for measuring temperature.

[0023] An electrical insulating layer 16 disposed on the rear side 14 of the sensor chip 4 may be designed to provide vertical electrical insulation between the sensor chip 4 and / or at least one sensor element 6. More precisely, the electrical insulating layer 16 may provide current insulation between the sensor chip 4 and the conductive rail 18 and / or between at least one sensor element 6 and the conductive rail 18. In the example shown, the electrical insulating layer 16 may cover the entire rear side 14 of the sensor chip 4, and thus ensure complete current separation between the sensor chip 4 and the conductive rail 18.

[0024] The electrically insulating layer 16 may comprise or be made of any suitable inorganic and / or organic material, provided that the electrically insulating layer fulfills the function intended for it. In particular, the electrically insulating layer 16 may comprise or be made of at least one of the following materials: oxides, nitrides, polyimides, epoxides, glass, ceramics, silicone, etc. In the example shown, the electrically insulating layer 16 may have a substantially constant thickness in the vertical direction. In a non-limiting example, the thickness of the electrically insulating layer 16 in the vertical direction may range from about 1 µm to about 10 µm. It should be noted in this case that the thickness of the electrically insulating layer 16 may depend on the specific implementation and application of the sensor device 200, and in particular on the potential difference that may occur between the sensor chip 4 and the conductive rail 18 during operation of the sensor device 200.

[0025] The electrically insulating material 12 disposed on the front side 10 of the sensor chip 4 can be designed to provide lateral electrical insulation for the sensor chip 4 and / or at least one sensor element 6. In the example shown, the electrically insulating material 12 may have at least one trench 24 extending through the sensor chip 4 in a direction from the front side 10 to the rear side 14 and filled with the electrically insulating material. In the illustrated case, an exemplary number of two trenches 24 are shown, which may (in particular) completely surround at least one sensor element 6, for example in Figure 2BThis is visible in the top view. In the example shown, the groove 24 can have a substantially rectangular shape. In other examples, the closed shape of the groove 24 can be chosen arbitrarily differently, such as being chosen as a circle, ellipse, square, polygon, etc.

[0026] The electrical insulating material 12 or the electrical insulating trench 24 may comprise or be made of any suitable inorganic and / or organic material, provided that the electrical insulating material or the electrical insulating trench fulfills the function intended for it. In particular, the electrical insulating trench 24 may comprise or be made of at least one of the following materials: oxides, nitrides, polyimides, epoxides, glass, ceramics, silicone, etc. In one example, all trenches 24 may be filled with the same electrical insulating material, while in another example, different trenches may be filled with different electrical insulating materials. The electrical insulating material 12 on the front side 10 and the electrical insulating layer 16 on the rear side 14 may be made of the same or different materials.

[0027] In a non-limiting example, the depth of the trench 24 in the vertical direction can range from about 10 µm to about 200 µm (more specifically from about 10 µm to about 100 µm). In a non-limiting example, the width of the trench 24 in the lateral direction can range from about 1 µm to about 10 µm. It should be noted in this case that the width of the trench 24, the depth of the trench 24, and / or the number of trenches 24 can depend on the specific implementation and application of the sensor device 200, and in particular on the potential difference that may occur between the sensor chip 4 and the conductive rail 18 during the operation of the sensor device 200.

[0028] In the example shown, the filled trench 24 can contact the electrically insulating layer 16 on the rear side 14 of the sensor chip 4. Therefore, in some examples, the filled trench 24 and the electrically insulating layer 16 can form a basin-shaped or shell-shaped structure that can surround at least one sensor element of the sensor chip 4. This geometry of the electrically insulating material provides the described insulation properties in both the lateral and vertical directions. The basin-shaped structure can in particular be constructed as continuous, interconnected, and without openings.

[0029] In another example, the insulating material 12 on the front side 10 of the sensor chip 4 does not necessarily extend into the sensor chip 4, but may (especially completely) be arranged on the front side 10 of the sensor chip 4 to provide lateral electrical insulation for the sensor chip 4 and / or at least one sensor element 6. Here, the material 12 may in particular form an edge structure and be arranged at (or near) the edge of the front side 10 of the chip. This arrangement of the electrically insulating material 12 can provide a reduction in the electric field strength or voltage on the front side 10 of the sensor chip 4, and especially at the edge of the front side 10 of the chip.

[0030] Sensor device 200 may have an encapsulation material 28, shown by dashed lines in FIG. 2. In the example shown, sensor chip 2 and conductive rail 18 may be at least partially encapsulated in encapsulation material 28. Encapsulation material 28 may form a housing (or package) for the encapsulated device components to protect them from external influences such as mechanical action, chemical contamination, humidity, light, etc. Sensor device 200 may also be referred to as sensor package or semiconductor package. Conductive rail 28 may be conductive rails inside the package. Conductive rail 18 may protrude at least partially from encapsulation material 28 to provide input and output terminals for measuring current 8. Similarly, connecting conductor 20 may protrude from encapsulation material 28 so that sensor chip 4 can be electrically accessed from the outside of encapsulation material 28. Encapsulation material 28 may comprise or be made of at least one of epoxides, imides, thermoplastics, thermosetting polymers, polymer blends, laminates, etc. For the encapsulation of the device components using encapsulation material 28, different techniques can be applied, such as compression molding, injection molding, powder molding, liquid molding, map molding, lamination, etc.

[0031] In some examples, the chip carrier section or conductive rail 18 can be electrically connected to the high-voltage connector of the sensor device 200, while the sensor chip 4 can be electrically connected to the low-voltage connector of the sensor device 200. Therefore, during operation of the sensor device 200, the conductive rail 18 can be in a high-voltage domain, and the sensor chip 4 can be in a low-voltage domain. Consequently, a large potential difference may occur between the conductive rail 18 and the sensor chip 4. This voltage difference can, for example, have a value exceeding 1000 volts. Sufficient current separation or current insulation can be provided between the conductive rail 18 and the sensor chip 4 through the filled trench 24 and the electrical insulating layer 16.

[0032] Due to the high voltage difference between the sensor chip 4 and the conductive rail 18, a locally higher electric field intensity may occur within the sensor device 200. In particular, the electric field intensity can increase in region 30 (or material tri-point), where the conductive rail 18, sensor chip 4 (or adhesive layer 26), and encapsulation material 28 (if present) are adjacent to each other. This high electrical load can lead to accelerated aging of the involved materials. In this case, it can cause delamination, discharge, and / or electrical “denaturation” of the encapsulation material 28, which typically begins at the corners and / or edges of the sensor chip 4 and / or chip carrier 2. This can lead to the construction of undesirable breakdown paths between the sensor chip 4 and the conductive rail 18, which in the worst case could cause the sensor device 200 to fail. By using filled trenches 24 and an electrically insulating layer 16, the region of higher or maximum electric field intensity in the problem area can be moved into the sensor chip 4, thereby avoiding or at least mitigating the aforementioned undesirable effects. The electric field can be tuned or set (“electric field tuning”) through the filled trench 24 and / or the electrical insulation layer 16.

[0033] It should be noted that, depending on the application and design of the sensor device 200, one or more parameters can be adapted accordingly to provide the aforementioned current insulation and / or movement of regions with particularly high electric field strength. These parameters may in particular include: the material of the electrical insulation layer 16, the thickness of the electrical insulation layer 16, the material of the filled trenches 24, the number of filled trenches 24, the depth of the filled trenches 24, the width of the filled trenches 24, the shape of the filled trenches 24, and the location of the filled trenches 24. Costly and consumable insulation, such as an additional dielectric plate (e.g., made of glass) disposed between the conductive rail 18 and the sensor chip 4, can be omitted.

[0034] It should also be noted that, through the aspects described herein, a particularly small distance can be achieved between the sensor element 6 and the conductive rail 18, and thus a reduced structural height of the sensor device 200. Due to the small distance, a high magnetic field strength can be achieved at the location of the sensor element 6, and therefore, the highest possible signal-to-noise ratio can be achieved during measurement. Therefore, the performance of the sensor device 200 can also be achieved through the electrical insulation described herein.

[0035] Figure 3The sensor device 300 may have one or more of the features of the sensor device described above. In the example shown, the sensor device 300 may have a solderable metallization 32 disposed on the electrically insulating layer 16 and a welding material 34 disposed thereon. In the example, the metallization 32 may comprise copper or a copper alloy or be made therefrom. The sensor device 300 is not necessarily fixed to the conductive rail 18 by an adhesive layer (as shown and described in the example of FIG. 2), but may instead be fixed to the chip carrier section 18 by means of a welding process. The adhesive layer described in conjunction with FIG. 2 may have defects, such as impurity particles or air cavities. In particular, higher electric field strength may occur in air cavities, which may lead to gas discharge and associated degradation of the involved materials. This can be avoided by alternative use of the solderable metallization 32 or by chip fixation due to the welding process. It should be noted that the fixation of the sensor chip 4 to the chip carrier 2 is not limited to a particular method. In addition to the possibilities already described (adhesion, welding), the sensor chip 4 may also be fixed by, for example, a sintering process or any other suitable technique.

[0036] Figure 4 The sensor device 400 may have one or more of the features of the sensor device described above. In the example shown, possible connecting conductors of the sensor device 400 are not shown for simplicity. The sensor device 400 may have a structured metal layer 36 disposed on the electrically insulating layer 16. The metal layer 36 may be configured such that a current 8 flowing through the structured metal layer 36 generates a magnetic field that can be measured by at least one sensor element 6 at the location of at least one sensor element 6. In the example shown, the structured metal layer 36 may have the same or similar shape as the conductive rail 18 of FIG2. Through the recesses formed on the two sides of the metal layer 36, the measuring current 8 can have a substantially S-shaped direction, thereby generating a measurable magnetic field at the location of the sensor element 6. Therefore, the chip carrier 2 does not need to have the shape required to generate a suitable magnetic field, thus abandoning the sometimes costly structuring of the chip carrier 2. In other words, in Figure 4 In the example described above, the functionality of the conductive rails is provided at least in part by the structured metal layer 36. The structured metal layer 36 may be fabricated, in particular, on the back side 14 of the sensor chip 4 before the sensor chip 4 is mounted on the chip carrier 2.

[0037] The structured metal layer 36 and the chip carrier 2 can be electrically connected to each other. Therefore, a measuring current 8 can flow through the chip carrier 2 and the structured metal layer 36, generating a measurable magnetic field at the location of at least one sensor element 6. In the example shown, the structured metal layer 36 is arranged within the outline of the sensor chip 4 when viewed from above (especially completely). The structured metal layer 36 can be fixed to the chip carrier 2, for example, by a conductive adhesive 38. Here, the adhesive 38 provides an electrical connection between the chip carrier 2 and the structured metal layer 36. The gap located below the electrically insulating layer 16 can be filled with an electrically insulating material 40, such as an oxide.

[0038] Figure 5 The sensor device 500 may have one or more of the features of the sensor device described above. In the example shown, for simplicity, possible connection conductors of the sensor device 500 are not shown. The sensor device 500 may have a structured metal layer 36, as previously combined... Figure 4 As described in the example, the recesses on the possible sides of the structured metal layer 36 are not shown. A carrier 42 may be disposed on the underside of the structured metal layer 36, the carrier having an electrical via 44 extending through the carrier 42. For example, the carrier 42 may be made of a semiconductor material (e.g., silicon). In this case, the via 44 may, for example, include or correspond to a TSV (Through Silicon Via), which may extend vertically from the underside to the topside of the carrier 42.

[0039] The carrier 42 and / or the structured metal layer 36 can be fixed to the underside of the electrically insulating layer 16 by an adhesive material 46. The adhesive material 46 can be, for example, a die-attach film. Furthermore, in the example shown, the carrier 42 can be fixed to the upper side of the chip carrier 2 by a soldering material 34. The structured metal layer 36 and the chip carrier 2 can be electrically connected to each other via a via 44. Therefore, a measuring current 8 can flow through the chip carrier 2, the via 44, and the structured metal layer 36, thereby generating a magnetic field measurable by at least one sensor element 6 at the location of at least one sensor element 6. In the example shown, the structured metal layer 36 can be at least partially integrated into the upper surface of the carrier 42. Here, the upper side of the carrier 42 and the upper side of the structured metal layer 36 can be flush, i.e., substantially located in a common plane.

[0040] Figure 6The sensor device 600 may have one or more of the features of the sensor device described above. In the example shown, the sensor device 600 may have a logic semiconductor chip 48 designed to process the measurement signal output by the sensor chip 4. The logic semiconductor chip 48 may, for example, comprise or correspond to an ASIC. Thus, the sensor chip 4 may be a discrete semiconductor chip whose basic function is to detect the magnetic field present at the location of the sensor element 6 and output a measurement signal based on the magnetic field, while (especially entirely) performing the processing of the measurement signal in the logic semiconductor chip 48. It is clear that in other examples, at least partially (or entirely) the processing of the measurement signal may be performed in the sensor chip 4 itself. In the example shown, the logic semiconductor chip 48 may be fixed to the connecting conductor 20 by an adhesive material 26. The sensor chip 4 and the logic semiconductor chip 48 may be electrically coupled to each other by an electrical connection element 22. Furthermore, the logic semiconductor chip 48 may be electrically connected to the connecting conductor 20 by another electrical connection element 22.

[0041] Figure 7 A method for manufacturing a sensor device according to the invention is illustrated. The method is shown in a general form in order to qualitatively specify several aspects of the invention. The method can be used, for example, to manufacture the aforementioned sensor device, and therefore can be read in conjunction with the preceding drawings. The method can be extended with respect to aspects described in conjunction with other examples discussed herein. Exemplary extensions of the method are derived from the preceding examples.

[0042] In step 50, multiple sensor elements may be fabricated on the front side of the semiconductor wafer, wherein the sensor elements are designed to detect physical parameters. In step 52, an electrically insulating material may be constructed on the front side of the semiconductor wafer, wherein the electrically insulating material surrounds at least one of the multiple sensor elements. In step 54, an electrically insulating layer may be constructed on the rear side of the semiconductor wafer opposite to the front side. In step 56, the semiconductor wafer may be separated into multiple sensor devices.

[0043] In the example, an electrically insulating material can be constructed on the front side by first constructing a plurality of trenches extending through the semiconductor wafer in a direction from the front side to the rear side. Here, each trench can surround at least one of a plurality of sensor elements. Subsequently, the trenches can be filled with an electrically insulating material that can contact an electrically insulating layer on the back side of the chip. Figure 2 illustrates, for example, a sensor device with such filled trenches according to the invention.

[0044] In another example, after constructing the electrically insulating layer, the solderable metallization 32 can be constructed on the back side of the semiconductor wafer. After separating the semiconductor wafer, the resulting sensor device can be fixed to a chip carrier via a soldering process, for example, by bonding... Figure 3 To show and describe.

[0045] In another example, after constructing the electrically insulating layer, a structured metal layer can be constructed on the back side of the semiconductor wafer. Here, the structured metal layer can be constructed in such a way that a current flowing through the structured metal layer generates a magnetic field at the location of the sensor element that can be measured by the sensor element. After separating the semiconductor wafer, a sensor device can be obtained, for example, in… Figure 4 As shown in the image.

[0046] In another example, after constructing the electrically insulating layer, a carrier wafer can be fixed to the back side of the semiconductor wafer, wherein the carrier wafer may have multiple vias extending through the carrier wafer. A sensor device can be produced after the semiconductor wafer is separated, for example in… Figure 5 As shown in the image.

[0047] The sensor device and related manufacturing method according to the invention are then described with reference to examples.

[0048] Example 1 is a sensor device comprising: a sensor chip having at least one sensor element disposed on the front side of the sensor chip and designed for detecting physical parameters; an electrically insulating material disposed on the front side of the sensor chip, the electrically insulating material surrounding the at least one sensor element; and an electrically insulating layer disposed on the rear side of the sensor chip opposite to the front side.

[0049] Example 2 is a sensor device according to Example 1, wherein at least one sensor element is designed to detect a magnetic field.

[0050] Example 3 is a sensor device according to Example 1 or 2, wherein the electrically insulating material includes at least one trench extending through the sensor chip in a direction from the front to the rear and filled with the electrically insulating material, wherein at least one filled trench surrounds at least one sensor element and is in contact with the electrically insulating layer.

[0051] Example 4 is a sensor device according to one of the examples above, further comprising: a conductive chip carrier, wherein a sensor chip is disposed above a section of the chip carrier, and wherein an electrically insulating layer provides current insulation between the chip carrier section and at least one sensor element.

[0052] Example 5 is a sensor device according to Example 4, wherein the chip-carrying section includes a conductive rail configured such that a current flowing through the conductive rail generates a magnetic field at the location of at least one sensor element that can be measured by at least one sensor element.

[0053] Example 6 is a sensor device according to one of Examples 3 to 5, wherein at least one filled trench and an electrically insulating layer form a basin-shaped structure that surrounds at least one sensor element.

[0054] Example 7 is a sensor device according to one of the foregoing examples, wherein the electrically insulating material and / or electrically insulating layer comprises at least one of the following materials: oxide, nitride, polyimide, epoxide.

[0055] Example 8 is a sensor device according to one of the examples above, which further includes: a solderable metallization disposed on an electrically insulating layer.

[0056] Example 9 is a sensor device according to one of the above examples, further comprising: a structured metal layer disposed on an electrically insulating layer, wherein the structured metal layer is configured such that a current flowing through the structured metal layer generates a magnetic field at the location of at least one sensor element that can be measured by at least one sensor element.

[0057] Example 10 is a sensor device according to Example 9, wherein a structured metal layer is arranged within the outline of a sensor chip.

[0058] Example 11 is a sensor device according to one of Examples 4 and 9 and 10, wherein: a structured metal layer and a chip carrier segment are electrically connected to each other, and a current flowing through the structured metal layer and the chip carrier segment generates a magnetic field at the location of at least one sensor element that can be measured by at least one sensor element.

[0059] Example 12 is a sensor device according to one of Examples 9 to 11, which further includes: a carrier disposed on a structured metal layer and an electrical through-hole extending through the carrier.

[0060] Example 13 is a sensor device according to Examples 4 and 12, wherein: the structured metal layer and the chip carrier segment are electrically connected to each other via vias, and the current flowing through the structured metal layer, the vias and the chip carrier segment generates a magnetic field at the location of at least one sensor element that can be measured by at least one sensor element.

[0061] Example 14 is a sensor device according to Example 12 or 13, wherein a structured metal layer is at least partially integrated on the surface of a carrier.

[0062] Example 15 is a sensor device according to one of Examples 4 to 14, further comprising: encapsulation material, wherein the sensor chip and the chip carrier segment are encapsulated in the encapsulation material.

[0063] Example 16 is a sensor device according to one of the examples above, further comprising: at least one additional sensor element, wherein an electrically insulating material surrounds the at least one additional sensor element, wherein the function of the at least one sensor element is different from the function of the at least one additional sensor element.

[0064] Example 17 is a sensor device according to one of the examples above, further comprising: a logic semiconductor chip, wherein the sensor chip is a discrete semiconductor chip and connected to the logic semiconductor chip, and wherein the logic semiconductor chip is designed to process the measurement signal output by the sensor chip.

[0065] Example 18 is a method for manufacturing a sensor device, wherein the method includes: fabricating a plurality of sensor elements on the front side of a semiconductor wafer, wherein the sensor elements are designed to detect physical parameters; constructing an electrically insulating material on the front side of the semiconductor wafer, wherein the electrically insulating material surrounds at least one of the plurality of sensor elements; constructing an electrically insulating layer on the rear side of the semiconductor wafer opposite to the front side; and separating the semiconductor wafer into a plurality of sensor devices.

[0066] Example 19 is based on the method of Example 18, wherein the sensor element is designed to detect a magnetic field.

[0067] Example 20 is a method according to Example 18 or 19, wherein constructing an electrically insulating material on the front side of a semiconductor wafer includes: constructing a plurality of trenches extending through the semiconductor wafer in a direction from the front side to the rear side of the semiconductor wafer, wherein each trench surrounds at least one of a plurality of sensor elements, and filling the trenches with an electrically insulating material in contact with an electrically insulating layer.

[0068] Example 21 is a method according to one of Examples 18 to 20, further comprising: after constructing an electrically insulating layer, constructing a solderable metallization on the back side of a semiconductor wafer.

[0069] Example 22 is a method according to one of Examples 18 to 21, further comprising: after constructing an electrically insulating layer, constructing a structured metal layer on the back side of a semiconductor wafer, wherein the structured metal layer is configured such that a current flowing through the structured metal layer generates a magnetic field that can be measured by the sensor element at the location of at least one sensor element.

[0070] Example 23 is a method according to one of Examples 18 to 22, further comprising: after constructing an electrically insulating layer, fixing a carrier wafer to the back side of a semiconductor wafer, wherein the carrier wafer has a plurality of electrically conductive vias extending through the carrier wafer.

[0071] It should be noted that the specification and accompanying drawings only illustrate the principles of the proposed methods and apparatus. Those skilled in the art will be able to implement different arrangements, although these arrangements are not explicitly described or shown herein, but they embody the principles of the invention and are included within the scope of the invention. Furthermore, all examples and embodiments outlined in this document are, in principle and explicitly, for illustrative purposes only, to assist the reader in understanding the principles of the proposed methods and apparatus. In addition, all statements in this document describing the principles, aspects, and embodiments of the invention and their specific examples should also include their equivalents.

Claims

1. A sensor device, comprising: A sensor chip (4) having at least one sensor element (6), the sensor element being arranged on the front side (10) of the sensor chip (4) and designed to detect physical parameters; An electrically insulating material (12) disposed on the front side (10) of the sensor chip (4), the electrically insulating material surrounding at least one sensor element (6); and An electrically insulating layer (16) is disposed on the rear side (14) of the sensor chip (6) opposite to the front side (10).

2. The sensor device according to claim 1, wherein, The at least one sensor element (6) is designed to detect magnetic fields.

3. The sensor device according to claim 1 or 2, wherein, The electrical insulating material (12) includes at least one trench (24) extending through the sensor chip (4) in a direction from the front side (10) to the rear side (14) and filled with electrical insulating material, wherein at least one filled trench (24) surrounds the at least one sensor element (6) and contacts the electrical insulating layer (16).

4. The sensor device according to any one of the preceding claims further includes: A conductive chip carrier (2), wherein the sensor chip (4) is disposed above a section (18) of the chip carrier (2), and wherein the electrical insulating layer (16) provides current insulation between the chip carrier section (18) and the at least one sensor element (6).

5. The sensor device according to claim 4, wherein, The chip carrier section (18) includes a conductive rail, which is configured such that a current flowing through the conductive rail generates a magnetic field at the location of the at least one sensor element (6) that can be measured by the at least one sensor element (6).

6. The sensor device according to any one of claims 3 to 5, wherein, At least one filled trench (24) and the electrical insulating layer (16) form a basin-shaped structure that surrounds the at least one sensor element (6).

7. The sensor device according to any one of the preceding claims, wherein, The electrical insulating material (12) and / or the electrical insulating layer (16) include at least one of the following materials: oxide, nitride, polyimide, epoxide.

8. The sensor device according to any one of the preceding claims, further comprising: A weldable metallized portion (32) disposed on the electrical insulation layer (16).

9. The sensor device according to any one of the preceding claims, further comprising: A structured metal layer (36) is disposed on the electrical insulating layer (16), wherein the structured metal layer (36) is configured such that a current flowing through the structured metal layer (36) generates a magnetic field at the location of the at least one sensor element (6) that can be measured by the at least one sensor element (6).

10. The sensor device according to claim 9, wherein, The structured metal layer (36) is arranged within the outline of the sensor chip (4).

11. The sensor device according to any one of claims 4, 9, and 10, wherein: The structured metal layer (36) and the chip carrier segment (18) are electrically connected to each other, and The current flowing through the structured metal layer (36) and the chip carrier section (18) generates a magnetic field at the location of the at least one sensor element (6) that can be measured by the at least one sensor element (6).

12. The sensor device according to any one of claims 9 to 11, further comprising: The carrier (42) arranged on the structured metal layer (36) and the electrical through hole (44) extending through the carrier (42).

13. The sensor device according to claims 4 and 12, wherein: The structured metal layer (36) and the chip carrier segment (18) are electrically connected to each other through the via (44), and The current flowing through the structured metal layer (36), the via (44), and the chip carrier section (18) generates a magnetic field at the location of the at least one sensor element (6) that can be measured by the at least one sensor element (6).

14. The sensor device according to claim 12 or 13, wherein, The structured metal layer (36) is at least partially integrated into the surface of the carrier (42).

15. The sensor device according to any one of claims 4 to 14, further comprising: The encapsulation material (28) contains the sensor chip (4) and the chip carrier segment (18).

16. The sensor device according to any one of the preceding claims, further comprising: At least one additional sensor element (6), wherein the electrically insulating material (12) surrounds the at least one additional sensor element (6), wherein the function of the at least one sensor element (6) is different from the function of the at least one additional sensor element (6).

17. The sensor device according to any one of the preceding claims, further comprising: A logic semiconductor chip (48), wherein the sensor chip (4) is a discrete semiconductor chip and is connected to the logic semiconductor chip (48), and wherein the logic semiconductor chip (48) is designed to process the measurement signal output by the sensor chip (4).

18. A method for manufacturing a sensor device, wherein, The method includes: Multiple sensor elements (6) are fabricated on the front side of a semiconductor wafer, wherein the sensor elements (6) are designed to detect physical parameters; An electrically insulating material (12) is constructed on the front side of the semiconductor wafer, wherein the electrically insulating material (12) surrounds at least one of the plurality of sensor elements (6). An electrically insulating layer (16) is formed on the rear side of the semiconductor wafer opposite to the front side. The semiconductor wafer is separated into multiple sensor devices.

19. The method according to claim 18, wherein, The sensor element (6) is designed to detect magnetic fields.

20. The method according to claim 18 or 19, wherein, The electrically insulating material (12) constructed on the front side of the semiconductor wafer comprises: A plurality of trenches (24) are constructed extending through the semiconductor wafer in a direction from the front side to the rear side, wherein each trench (24) surrounds at least one of the plurality of sensor elements (6), and The trench (24) is filled with an electrically insulating material that is in contact with the electrically insulating layer (16).

21. The method according to any one of claims 18 to 20, further comprising: After constructing the electrical insulating layer (16), a solderable metallization (32) is constructed on the back side of the semiconductor wafer.

22. The method according to any one of claims 18 to 21, further comprising: After constructing the electrical insulating layer (16), a structured metal layer (36) is constructed on the back side of the semiconductor wafer, wherein the structured metal layer (36) is configured such that the current flowing through the structured metal layer (36) generates a magnetic field at the location of the sensor element (6) that can be measured by the sensor element (6).

23. The method according to any one of claims 18 to 22, further comprising: After constructing the electrical insulating layer (16), a carrier wafer is fixed on the back side of the semiconductor wafer, wherein the carrier wafer has a plurality of electrical vias (44) extending through the carrier wafer.

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