Super capacitor module life monitoring method and device, electronic terminal, and storage medium
By constructing functional expressions for the voltage, current, and charge changes of a supercapacitor module, and using the least squares method to determine the capacitance and equivalent resistance, the problem of difficulty in real-time and accurate monitoring of the supercapacitor module's lifespan in existing technologies is solved, thus achieving safe lifespan monitoring.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XIAN MEGMEET ELECTRICAL CO LTD
- Filing Date
- 2026-05-18
- Publication Date
- 2026-06-12
AI Technical Summary
Existing technologies make it difficult to monitor the lifespan of supercapacitor modules in real time and with high accuracy, making it difficult to prevent safety hazards.
By acquiring current and voltage data of the supercapacitor module, calculating voltage changes, current changes, and charge changes, constructing functional expressions for capacitance and equivalent resistance, and using the least squares method to determine the capacitance value and equivalent resistance value, the module's lifespan can be monitored.
It enables real-time and accurate monitoring of the supercapacitor module's lifespan, ensuring safe use.
Smart Images
Figure CN122194012A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power management technology, and in particular to a method, device, electronic terminal, and storage medium for monitoring the lifespan of a supercapacitor module. Background Technology
[0002] Supercapacitor bank units (CBUs) are used in fields such as regenerative braking in electric vehicles and backup power supplies for data centers, and are one of the main components of power electronic devices such as power supplies. A supercapacitor module is generally composed of multiple supercapacitor cells connected in series or parallel, and its lifespan is usually determined by its equivalent series resistance and / or capacitance value. Safety hazards often arise when a supercapacitor module reaches the end of its lifespan; therefore, monitoring the lifespan of supercapacitor modules is particularly important. Summary of the Invention
[0003] This application mainly provides a method, device, electronic terminal, and storage medium for monitoring the lifespan of a supercapacitor module. The method can monitor the lifespan of the supercapacitor module in real time and accurately during its use.
[0004] To solve the above-mentioned technical problems, the first technical solution adopted in this application is: to provide a method for monitoring the lifespan of a supercapacitor module, comprising: Obtain the current and voltage at the nth sampling point, and calculate the voltage change, current change, and charge change at the nth sampling point, where n is a positive integer; Based on the voltage change, current change, and charge change at the nth sampling point, construct functional expressions for the capacitance and equivalent resistance of the supercapacitor; The capacitance and equivalent resistance of the supercapacitor are determined based on the function expression using the least squares method. The lifespan of the supercapacitor module is determined based on the capacitance value and the equivalent resistance value.
[0005] To solve the above-mentioned technical problems, the second technical solution adopted in this application is: to provide a life monitoring device for a supercapacitor module, comprising: The sampling unit is used to sample and acquire the current and voltage at the nth sampling point, where n is a positive integer. The calculation unit, connected to the sampling unit, is used to calculate the voltage change, current change, and charge change at the nth sampling point, and to construct a functional expression for the capacitance and equivalent resistance of the supercapacitor based on the voltage change, current change, and charge change at the nth sampling point; and to determine the capacitance and equivalent resistance of the supercapacitor based on the functional expression using the least squares method. A lifespan monitoring unit is used to determine the lifespan of the supercapacitor module based on the capacitance value and the equivalent resistance value.
[0006] To solve the above-mentioned technical problems, the third technical solution adopted in this application is: to provide an electronic terminal, the electronic terminal including a memory and a processor coupled to each other, the processor being used to execute program instructions stored in the memory, and the processor being used to execute program data to implement the steps in the life monitoring method of the supercapacitor module described in any of the above claims.
[0007] To solve the above-mentioned technical problems, the fourth technical solution adopted in this application is: to provide a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, to implement the steps in the life monitoring method of the supercapacitor module described in any of the above claims.
[0008] The beneficial effects of this application are as follows: Unlike existing technologies, the supercapacitor module lifespan monitoring method provided in this application constructs a functional expression for the capacitance and equivalent resistance of the supercapacitor based on the voltage change, current change, and charge change at the nth sampling point; it then uses the least squares method to determine the capacitance and equivalent resistance values of the supercapacitor based on this functional expression; and finally, it determines the lifespan of the supercapacitor module based on the capacitance and equivalent resistance values. This allows for real-time and accurate monitoring of the supercapacitor module's lifespan during use, ensuring safe operation. Attached Figure Description
[0009] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0010] Figure 1 This is a flowchart illustrating an embodiment of the lifespan monitoring method for supercapacitor modules according to this application; Figure 2 This is a schematic diagram of the equivalent RC series circuit of a supercapacitor. Figure 3 This is a flowchart illustrating another embodiment of the life monitoring method for the supercapacitor module of this application. Figure 4 This is a flowchart illustrating another embodiment of the life monitoring method for the supercapacitor module of this application; Figure 5 This is a schematic diagram of the framework of an embodiment of the life monitoring device for the supercapacitor module of this application; Figure 6A schematic diagram of the framework of an embodiment of the electronic terminal provided in this application; Figure 7 A schematic diagram of a framework of an embodiment of the computer-readable storage medium provided in this application. Detailed Implementation
[0011] Before providing a further detailed description of the embodiments of this application, the nouns and terms involved in the embodiments of this application will be explained, and the nouns and terms involved in the embodiments of this application shall be interpreted as follows.
[0012] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.
[0013] In this article, the term "and / or" simply describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. Additionally, the character " / " generally indicates that the preceding and following related objects have an "or" relationship. Furthermore, "more" in this article means two or more objects.
[0014] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.
[0015] To enable those skilled in the art to better understand the technical solutions of this application, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0016] See Figure 1 , Figure 1 This is a flowchart illustrating the first embodiment of the lifespan monitoring method for a supercapacitor module according to this application. The supercapacitor module includes at least one supercapacitor. The method of this embodiment specifically includes: Step S11: Calculate the voltage change, current change, and charge change at the nth sampling point, where n is a positive integer.
[0017] Specifically, the voltage and current of the supercapacitor are collected to obtain the current and voltage at the nth sampling point. The voltage change, current change, and charge change at the nth sampling point are then calculated, where n is a positive integer.
[0018] Wherein, the voltage change at the nth sampling point is the difference between the voltage at the nth sampling point and the voltage at the (n-1)th sampling point, denoted as... ,in, This represents the voltage change at the nth sampling point. This represents the voltage at the nth sampling point. This represents the voltage at the (n-1)th sampling point.
[0019] The change in current at the nth sampling point is the difference between the current at the nth sampling point and the current at the (n-1)th sampling point, denoted as... ,in, This represents the change in current at the nth sampling point. This represents the current at the nth sampling point. This represents the current at the (n-1)th sampling point.
[0020] The charge change at the nth sampling point is the product of the current at the nth sampling point and the sampling period, denoted as... ,in, This represents the change in charge at the nth sampling point. This represents the current at the nth sampling point. Indicates the sampling period.
[0021] Step S12: Construct a functional expression for the capacitance and equivalent resistance of the supercapacitor based on the voltage change, current change, and charge change at the nth sampling point.
[0022] The equivalent RC series circuit of the supercapacitor in the supercapacitor module is as follows: Figure 2 As shown, the time-domain equation is expressed as: Formula (4).
[0023] Where u(t) is the voltage across the supercapacitor at time t, i(t) is the current flowing into the supercapacitor at time t, u(t0) is the voltage across the supercapacitor at time t0, C is the capacitance of the supercapacitor, and R is the equivalent resistance of the supercapacitor.
[0024] Substituting two consecutive sampling points t1 and t2 into the above formula (4), we can obtain: Formula (5).
[0025] Where u(t1) is the voltage across the supercapacitor at time t1, i(t1) is the current flowing into the supercapacitor at time t1, u(t0) is the voltage across the supercapacitor at time t0, u(t2) is the voltage across the supercapacitor at time t2, i(t2) is the current flowing into the supercapacitor at time t2, and Ts represents the sampling period.
[0026] Combining the equations in formula (5) above, we get: Formula (6).
[0027] Based on the sampling period Ts, since t1 and t2 are two consecutive sampling points, discretizing the above formula (6) yields: Formula (7).
[0028] in, This represents the voltage at the nth sampling point. This represents the voltage at the (n-1)th sampling point. This represents the current at the nth sampling point. This represents the current at the (n-1)th sampling point.
[0029] Simplifying the above formula (7), we can obtain the functional expressions for the capacitance and equivalent resistance of the supercapacitor, as shown in the following formula (1): , , Formula (1).
[0030] In formula (1): ; ; .
[0031] in, This represents the voltage change at the nth sampling point. This represents the change in charge at the nth sampling point. The value of C represents the current change at the nth sampling point, and the value of R represents the equivalent resistance.
[0032] Step S13: Determine the capacitance and equivalent resistance of the supercapacitor based on the function expression using the least squares method.
[0033] In one specific embodiment, the capacitance value and equivalent resistance value of the supercapacitor are determined based on the sum of squares of the charge change at the nth sampling point, the sum of the product of the charge change and the current change at the nth sampling point, the sum of squares of the current change at the nth sampling point, the sum of the product of the charge change and the voltage change at the nth sampling point, and the sum of the product of the current change and the voltage change at the nth sampling point.
[0034] Specifically, the goal of the least squares method is to minimize the sum of squared residuals, which can be obtained from the above formula (1): Formula (8).
[0035] Where S represents the sum of squared residuals, This represents the voltage change at the i-th sampling point. This represents the change in charge at the i-th sampling point. This represents the change in current at the i-th sampling point.
[0036] Based on the above formula (8), taking the partial derivatives with respect to a and b respectively, and setting them to zero, we get: Formula (9).
[0037] Simplifying the above formula (9), we obtain the system of equations: Formula (10).
[0038] In formula (10), the parameters satisfy: Formula (11).
[0039] in, This represents the sum of squares of the charge change at the nth sampling point. This represents the sum of squares of the current changes at the nth sampling point. This represents the sum of the products of the charge change and the current change at the nth sampling point. This represents the sum of the products of the charge change and the voltage change at the nth sampling point. This represents the sum of the product of the current change and the voltage change at the nth sampling point.
[0040] To facilitate the solution, the above formula (10) is transformed into matrix form, resulting in: Formula (12).
[0041] Solving equation (12), we get:
[0042]
[0043]
[0044] Formula (13).
[0045] According to the above formula (13), the capacitance value of the supercapacitor is calculated as shown in the following formula (2): Formula (2).
[0046] Based on the above formula (13), the calculation method for the equivalent resistance value of the supercapacitor is as shown in the following formula (3): Formula (3).
[0047] Step S14: Determine the lifespan of the supercapacitor module based on the capacitance value and the equivalent resistance value.
[0048] The capacitance value and the equivalent resistance value of the supercapacitor can be calculated using the above formulas (2) and (3), and then the lifespan of the supercapacitor module can be determined based on the capacitance value and the equivalent resistance value.
[0049] This application can calculate the capacitance and equivalent resistance of supercapacitors in real time and accurately during the use of supercapacitor modules, thereby monitoring the lifespan of supercapacitor modules. Furthermore, this application uses the least squares method based on accumulation and updating when calculating the capacitance and equivalent resistance, which requires little storage space, has low computational load, high real-time performance, and is easy to implement in engineering.
[0050] Combination Figure 3 The lifespan monitoring method for the supercapacitor module of this application is further described below. The current and voltage of the supercapacitor are sampled in real time to obtain the current and voltage at the nth sampling point. Specifically, the following steps are performed: Step S101: n = n + 1. n is initially 0. Set the detection counter. When sampling begins, the detection counter starts counting, and it increments by 1 for each sampling point.
[0051] Step S102: Sampling and Acquisition , That is, to obtain the voltage at the nth sampling point. and current .
[0052] Step S103: Determine whether n≥2 is satisfied.
[0053] If so, proceed to step S104: Calculate the voltage change at the nth sampling point based on the voltage at the nth sampling point and the voltage at the (n-1)th sampling point, i.e. The change in current at the nth sampling point is calculated based on the current at the nth sampling point and the current at the (n-1)th sampling point. The charge change at the nth sampling point is calculated based on the current at the nth sampling point and the sampling period. .
[0054] Further execute step S105 to calculate the sum of squares of the charge change at the nth sampling point. The sum of the product of the charge change and the current change at the nth sampling point The sum of squares of the current changes at the nth sampling point The sum of the product of the charge change and the voltage change at the nth sampling point The sum of the product of the current change and the voltage change at the nth sampling point .
[0055] If not, i.e., n=1, then proceed to step S109. Understandably, if n=1, then the change in charge... It should be noted that the voltage change at this time Current change Further execute step S110 to calculate the sum of squares of the charge change at the first sampling point. The sum of the product of the charge change and the current change at the first sampling point The sum of squares of the current changes at the first sampling point The sum of the product of the charge change and the voltage change at the first sampling point The sum of the product of the current change and the voltage change at the first sampling point .
[0056] Then, step S106 is executed to determine whether n ≥ the calculated threshold. The calculated threshold is ≥ 2; in a specific embodiment, the calculated threshold may be, for example, 4.
[0057] If n ≥ the calculation threshold, then proceed to step S107 to calculate the capacitance value C and the equivalent resistance value R.
[0058] After calculating the capacitance value C and the equivalent resistance value R, step S108 is further executed to determine whether n ≥ the zeroing threshold. The zeroing threshold is greater than the calculation threshold; in one embodiment, the zeroing threshold is 10000. Setting the zeroing threshold can prevent calculation overflow.
[0059] If n ≥ the zeroing threshold, then n is cleared to zero, i.e., n = 0. Otherwise, the capacitance value C and the equivalent resistance value R are output.
[0060] In another embodiment of this application, combined with Figure 4 Specifically, it includes: Step S201: m = m + 1. Specifically, acquire the current and voltage at m initial sampling points and count them using a frequency divider counter. Set the frequency divider counter to increment by 1 for each sampling point.
[0061] Step S202: Sampling and Acquisition , .in, This represents the current at the m-th initial sampling point. This represents the voltage at the m-th initial sampling point.
[0062] Step S203: Determine whether m≥2 is satisfied.
[0063] If so, i.e., m≥2, then calculate the charge change at the m-th initial sampling point. Specific execution step S204: Calculate... Specifically, based on the charge change at the (m-1)th initial sampling point. Sampling period and the current at the m-th initial sampling point The charge change at the m-th initial sampling point was calculated. .
[0064] If not, then m-1, and proceed to step S205: calculate Specifically, based on the current at the first initial sampling point. The charge change at the first initial sampling point is calculated using the sampling period Ts.
[0065] After step S204 or S205, step S206 is executed: determine (mk) ≥ frequency division threshold.
[0066] Specifically, determine whether m meets the frequency division condition. If so, execute step S207: n=n+1, k=m. Specifically, if m meets the frequency division condition, i.e. (mk)≥frequency division threshold, then start the detection counter and start counting using the detection counter to collect n sampling points.
[0067] It should be noted that at this point, the value of m is assigned to k. For example, if k is initially 0 and the frequency division threshold is 8~15, such as 10, then if (m-0) ≥ 10, the frequency division condition is met. In this case, the value of k is updated, setting k = m, and the next round of initial sampling points is performed until (mk) ≥ the frequency division threshold. It should also be noted that when the detection counter is activated to collect n sampling points, the frequency division counter will also perform initial sampling points according to the predetermined frequency.
[0068] In other embodiments, the frequency division threshold can be a value within other ranges. In another embodiment, the frequency division threshold can be determined based on the sampling period, for example, the product of the frequency division threshold and the sampling period Ts is less than a preset value, such as 1s. The sampling period Ts is, for example, 10us to 100us.
[0069] Further execute step S208 to calculate the charge change at the m-th initial sampling point. As the charge change at the nth sampling point, i.e. The voltage at the m-th initial sampling point The voltage at the nth sampling point, i.e. ; The current at the m-th initial sampling point The current at the nth sampling point, i.e. This is used to calculate the voltage change, current change, and charge change at the nth sampling point.
[0070] Further, proceed to step S209: That is, let the charge change at the m-th initial sampling point be... It is set to 0 to facilitate the calculation of the m-th initial sampling point in the next frequency division.
[0071] Step S210: Determine whether n≥2 is satisfied.
[0072] If so, proceed to step S211: Calculate the voltage change at the nth sampling point based on the voltage at the nth sampling point and the voltage at the (n-1)th sampling point, i.e. The change in current at the nth sampling point is calculated based on the current at the nth sampling point and the current at the (n-1)th sampling point. .
[0073] If not, proceed to step S110. Step S110 is the same as described above. Figure 3 The same applies as shown above, and will not be repeated here. After step S211, steps S105-S108 are executed, and steps S105-S108 are the same as described above. Figure 3 The same applies here, so it will not be repeated. When n ≥ the zeroing threshold, n, m, and k are cleared to zero, i.e., n=0, m=0, and k=0.
[0074] The life monitoring method for supercapacitor modules proposed in this application can monitor the life of supercapacitor modules in real time and accurately during use. It combines the least squares method based on accumulation and update to determine the capacitance and series resistance of the supercapacitor. It has low computational complexity, high real-time performance, and is easy to implement in engineering.
[0075] Please see Figure 5 , Figure 5 This is a schematic diagram of the framework of an embodiment of the life monitoring device for a supercapacitor module according to this application, specifically including: a sampling unit 51, a calculation unit 52, and a life monitoring unit 53. The sampling unit 51 is used to sample and acquire the current and voltage at the nth sampling point, where n is a positive integer. The calculation unit 52 is connected to the sampling unit and is used to calculate the voltage change, current change, and charge change at the nth sampling point. Based on the voltage change, current change, and charge change at the nth sampling point, a functional expression for the capacitance and equivalent resistance of the supercapacitor is constructed. The capacitance value and equivalent resistance value of the supercapacitor are determined using the least squares method based on the functional expression. The life monitoring unit 53 is used to determine the life of the supercapacitor module based on the capacitance value and the equivalent resistance value.
[0076] Please see Figure 6 , Figure 6This is a schematic diagram of a framework of an embodiment of the electronic terminal provided in this application. The electronic terminal 80 includes a memory 81 and a processor 82 coupled to each other. The processor 82 is used to execute program instructions stored in the memory 81 to implement the steps of any of the above-described embodiments of the life monitoring method for supercapacitor modules. In a specific implementation scenario, the electronic terminal 80 may include, but is not limited to, a microcomputer or a server. In addition, the electronic terminal 80 may also include mobile devices such as laptops and tablets, which are not limited here.
[0077] Specifically, processor 82 controls itself and memory 81 to implement the steps of any of the above-described supercapacitor module life monitoring method embodiments. Processor 82 can also be referred to as a CPU (Central Processing Unit). Processor 82 may be an integrated circuit chip with signal processing capabilities. Processor 82 can also be a general-purpose processor, digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. A general-purpose processor can be a microprocessor or any conventional processor. Furthermore, processor 82 can be implemented using integrated circuit chips.
[0078] Please see Figure 7 , Figure 7 This is a schematic diagram of an embodiment of a computer-readable storage medium provided in this application. The computer-readable storage medium 90 stores program instructions 901 that can be executed by a processor. The program instructions 901 are used to implement the steps of any of the above-described embodiments of the life monitoring method for supercapacitor modules.
[0079] In some embodiments, the functions or modules of the apparatus provided in this disclosure can be used to perform the methods described in the above method embodiments. The specific implementation can be referred to the description of the above method embodiments, and for the sake of brevity, it will not be repeated here.
[0080] The description of the various embodiments above tends to emphasize the differences between the various embodiments. The similarities or similarities between them can be referred to, and for the sake of brevity, they will not be repeated here.
[0081] In the several embodiments provided in this application, it should be understood that the disclosed methods and apparatus can be implemented in other ways. For example, the apparatus implementations described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.
[0082] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0083] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods of various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0084] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.
Claims
1. A method for monitoring the lifespan of a supercapacitor module, characterized in that, The supercapacitor module includes at least one supercapacitor, and the method includes: Obtain the current and voltage at the nth sampling point, and calculate the voltage change, current change, and charge change at the nth sampling point, where n is a positive integer; Based on the voltage change, current change, and charge change at the nth sampling point, construct functional expressions for the capacitance and equivalent resistance of the supercapacitor; The functional expressions for the capacitance and equivalent resistance of the supercapacitor are shown in the following formula: ， , ； in, This represents the voltage change at the nth sampling point. This represents the change in charge at the nth sampling point. The value of C represents the change in current at the nth sampling point, and the value of R represents the equivalent resistance. The capacitance and equivalent resistance of the supercapacitor are determined based on the aforementioned function expression. The lifespan of the supercapacitor module is determined based on the capacitance value and the equivalent resistance value.
2. The method according to claim 1, characterized in that, Determining the capacitance and equivalent resistance of the supercapacitor based on the aforementioned functional expression includes: The capacitance and equivalent resistance of the supercapacitor are determined based on the sum of the squares of the charge change at the nth sampling point, the sum of the products of the charge change and current change at the nth sampling point, the sum of the squares of the current change at the nth sampling point, the sum of the products of the charge change and voltage change at the nth sampling point, and the sum of the products of the current change and voltage change at the nth sampling point.
3. The method according to claim 2, characterized in that, The capacitance value of the supercapacitor is calculated using the following formula: ； in, This represents the sum of squares of the charge change at the nth sampling point. This represents the sum of squares of the current changes at the nth sampling point. This represents the sum of the products of the charge change and the current change at the nth sampling point. This represents the sum of the products of the charge change and the voltage change at the nth sampling point. This represents the sum of the product of the current change and the voltage change at the nth sampling point.
4. The method according to claim 3, characterized in that, The equivalent resistance of the supercapacitor is calculated using the following formula: 。 5. The method according to claim 1, characterized in that, If n is greater than or equal to the zeroing threshold, then n is zeroed and the process returns to: obtain the current and voltage of the nth sampling point.
6. The method according to claim 2, characterized in that, Obtain the current and voltage at the nth sampling point, and calculate the voltage change, current change, and charge change at the nth sampling point, including: Acquire the current and voltage at m initial sampling points and count them using a frequency divider counter; If m ≥ 2, then calculate the charge change at the m-th initial sampling point; If m satisfies the frequency division condition, the detection counter starts counting. The charge change at the m-th initial sampling point is taken as the charge change at the n-th sampling point, the voltage at the m-th initial sampling point is taken as the voltage at the n-th sampling point, and the current at the m-th initial sampling point is taken as the current at the n-th sampling point, so as to calculate the voltage change, current change, and charge change at the n-th sampling point.
7. A lifespan monitoring device for a supercapacitor module, characterized in that, The supercapacitor module includes at least one supercapacitor, and the device includes: The sampling unit is used to sample and acquire the current and voltage at the nth sampling point, where n is a positive integer. A calculation unit, connected to the sampling unit, is used to calculate the voltage change, current change, and charge change at the nth sampling point. Based on the voltage change, current change, and charge change at the nth sampling point, a functional expression for the capacitance and equivalent resistance of the supercapacitor is constructed. Based on the functional expression, the capacitance value and equivalent resistance value of the supercapacitor are determined. The functional expression for the capacitance and equivalent resistance of the supercapacitor is shown in the following formula: ， , ； in, This represents the voltage change at the nth sampling point. This represents the change in charge at the nth sampling point. The value of C represents the change in current at the nth sampling point, and the value of R represents the equivalent resistance. A lifespan monitoring unit is used to determine the lifespan of the supercapacitor module based on the capacitance value and the equivalent resistance value.
8. An electronic terminal, characterized in that, The electronic terminal includes a memory and a processor coupled to each other. The processor is used to execute program instructions stored in the memory and to execute program data to implement the steps in the life monitoring method of the supercapacitor module as described in any one of claims 1 to 6.
9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps in the life monitoring method for a supercapacitor module as described in any one of claims 1 to 6.