Europium complex and method for preparing gallium nitride-based red light emitting diode by using europium complex as precursor
By using the oxygen-free europium complex Eu(Dmphen)2Cl3 as a precursor, the fluorescence quenching problem caused by oxygen impurities in europium-doped gallium nitride-based red micro-LED devices was solved, achieving efficient and stable europium doping, improving luminous efficiency and device performance, and making it suitable for full-color display and optical structure design.
Patent Information
- Application Number
- CN202610455500.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-08
- Publication Date
- 2026-06-23
AI Technical Summary
In the existing technology, europium-doped gallium nitride-based red micro LED devices suffer from fluorescence quenching caused by oxygen impurities, resulting in low luminous efficiency. Furthermore, existing europium precursors are incompatible with molecular beam epitaxy processes, making it difficult to achieve efficient and stable europium doping.
Using the oxygen-free europium complex Eu(Dmphen)2Cl3 as a precursor, europium doping was performed via metal-organic chemical vapor phase epitaxy to prepare gallium nitride-based red LEDs, avoiding the introduction of oxygen impurities and improving luminous efficiency.
It significantly improves the red light luminous efficiency of gallium nitride-based red LEDs, enhances the luminous performance and stability of the device, reduces the oxygen impurity concentration, and is suitable for full-color optical structure design.