Atomic-scale fabrication method for active control of particle energy

Abstract

This invention discloses an atomic-level manufacturing method with actively controlled particle energy, comprising: 1. placing a workpiece on a workpiece holder within a vacuum chamber and connecting it to an atomic-level manufacturing device with an actively controlled particle energy sputtering target source and its power supply system; 2. evacuating the vacuum chamber and setting the power parameters of the actively controlled particle energy source; 3. introducing a working gas into the vacuum chamber and generating a batch of particles by adjusting the power parameters of the actively controlled particle energy source system, thereby achieving active control of the batch particle energy; 4. depositing actively controlled particles with the required energy onto the workpiece to perform atomic-level manufacturing and complete the thin film preparation. The advantages of this invention are: it enables active control of the batch particle energy during atomic-level manufacturing, thereby controlling the structure and properties of the thin film and achieving atomic-level manufacturing. This invention has significant potential applications in the field of materials surface engineering, particularly in the field of atomically controllable manufacturing.

Description

Technical Field

[0001] This invention relates to the field of materials surface engineering. Background Technology

[0002] Vacuum physical vapor deposition (PVD) coating is widely used in thin film preparation fields such as: microelectronics, for preparing metal wires, metal heat sinks, and depositing conductive or insulating materials on wafers; optics, for preparing optical components such as lenses, filters, and mirrors; solar cells, for improving photoelectric conversion efficiency; machinery industry, for improving surface hardness, wear resistance, and corrosion resistance; and functional thin films, for low-temperature deposition of silicon nitride antireflective films and ferroelectric films.

[0003] However, current vacuum PVD coating technology requires passive energy control of the particles used in coating by applying a negative voltage to the workpiece. It is not yet possible to actively control the energy of the particles involved in coating, thereby enabling artificial intervention in the construction of the thin film's atomic topology. The final structure formed during the coating process still primarily depends on the nucleation thermodynamics and kinetics of the film's spontaneous growth. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings and defects of existing vacuum PVD coating technology, which can only achieve passive control of the energy of coating particles by applying a negative voltage to the workpiece, and to provide an atomic-level manufacturing method with active particle energy control.

[0005] Existing vacuum PVD coating technology can only control the energy of the particles used in coating by applying a negative voltage to the workpiece, and is greatly affected by plasma parameters such as ionization rate during the PVD coating process. It is not yet possible to actively intervene and control the atomic-level construction of the thin film's atomic topology by actively controlling the energy of the particles involved in coating. The final structure formed during the coating process still mainly depends on the nucleation thermodynamics and kinetics of the film's spontaneous growth. The purpose of this invention is to achieve active control of the coating process at the atomic level.

[0006] To achieve the above objectives, this invention proposes an atomic-level manufacturing method for actively controlling the energy of particles used in film deposition. The method is characterized by employing an actively controlled sputtering target source and its power supply system during the atomic-level manufacturing process. The energy of the particles used in atomic-level manufacturing can be actively controlled. The atomic-level manufacturing method includes the following steps: Step 1: Connecting the relevant actively controlled sputtering target source and its power supply system to the atomic-level manufacturing equipment, and placing the workpiece on a workpiece rack in a vacuum chamber; Step 2: Evacuating the vacuum chamber and setting the power parameters of the actively controlled sputtering target source and its power supply system; Step 3: Introducing a working gas into the vacuum chamber, and exciting pulsed plasma by adjusting the parameters of the actively controlled sputtering target source and its power supply system to achieve active control of particle energy at the atomic scale; Step 4: Depositing the actively controlled particles onto the workpiece to perform atomic-level manufacturing and complete the thin film preparation.

[0007] As a preferred method, unlike traditional atomic-level manufacturing methods, the energy of the particles used in atomic-level manufacturing is actively controlled by the aforementioned particle energy active control sputtering target source and its power supply system.

[0008] As a preferred embodiment, an atomic-level manufacturing method with active control of particle energy is provided. The particles used for atomic-level manufacturing can be obtained, in part or in whole, by sputtering a sputtering target source and its power supply system with active control of particle energy. Some of these particles can be formed from active gases participating in atomic-level manufacturing in a vacuum. The characteristic of this method is that the energy of these atomic-level manufacturing particles can be adjusted and controlled by actively controlling the sputtering target source and its power supply system with active control of particle energy.

[0009] As a preferred method, the particle energy of this atomic-level manufacturing method is controlled by pulsating plasma.

[0010] As a preferred method, it can generate pulsating plasma, realize the coupling of force, electricity and magnetism multi-energy fields, and complete the generation and energy control of some particles required for atomic-level manufacturing, with an energy adjustment range of 1eV~100keV.

[0011] As a preferred approach, the energy of particles used in atomic-level manufacturing includes kinetic energy, potential energy, or a combination of kinetic and potential energy.

[0012] As a preferred approach, at least one sputtering target source and its power supply system capable of actively controlling particle energy are employed, with the energy of the particles used in atomic-level manufacturing actively controlled by the sputtering target source and its power supply system. Alternatively, during thin film preparation, in addition to active control by the sputtering target source and its power supply system, the energy of the particles used in atomic-level manufacturing can also be further controlled by applying a bias voltage to the workpiece.

[0013] This invention proposes a novel atomic-level manufacturing method that actively controls the energy of particles used in coating to intervene in or influence the structure of thin films. This is a revolutionary coating technology that, in addition to its potential applications in the aforementioned traditional fields, can also be used in the discovery and preparation of novel structural thin films.

[0014] This invention aims to build a core technology system for atomic-level manufacturing, providing atomic-precision manufacturing solutions for fields such as sub-nanometer chip manufacturing, quantum computing, new energy materials, and aerospace, thereby seizing the commanding heights of cutting-edge manufacturing and providing unique technological support. Advantages of this invention: By actively controlling the energy of particles used in atomic-level manufacturing, and intervening in or influencing the structure of thin films and the topological processes of atomic assembly, controllable preparation and atomic manufacturing of thin films can be achieved. This enables large-scale autonomous atomic manipulation, significantly improving the efficiency and quantity of manipulation of particles such as atoms and molecules. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the following description of the embodiments will be briefly introduced. Obviously, the accompanying drawings in the following description are only used to explain the concept of the present invention.

[0016] Figure 1 This is a schematic diagram of an atomic-level manufacturing method with active particle energy control according to an embodiment of the present invention.

[0017] Figure 2 This is a schematic diagram of the power system of the active particle energy control sputtering target source and its power system generating a batch of particles, according to an embodiment of the present invention.

[0018] Figure 3 This is a schematic diagram of the power system of the active particle energy control sputtering target source and its power system in an embodiment of the present invention, which generates a batch of particles with three pulses.

[0019] Figure 4 Cross-sectional and planar SEM images of Cr thin films were obtained on stainless steel workpieces using an atomic-level manufacturing method with active particle energy control.

[0020] Summary of attached image labels: 1. Vacuum chamber; 2. Workpiece rack; 3. Workpiece; 4. Thin films obtained by atomic-level manufacturing methods; 5. Batch particles controlled by energy through pulsed plasma; 6. Particles obtained by sputtering targets through active control of particle energy sputtering target source and its power system can also be particles of active gases that participate in atomic-level manufacturing in a vacuum. 7. Active control of particle energy for sputtering target source and its power supply system; 8. Active control of sputtering target source and its power supply system by particle energy; 9. The power system for the active particle energy control sputtering target source and its power supply system; 11. The power system of the sputtering target source and its power system actively controls the generation of the first pulse of batch particles by the particle energy active control sputtering target source and its power system. 12. The power system of the sputtering target source and its power system actively controls the generation of a second pulse of batch particles by the particle energy active control sputtering target source and its power system. 13. Active control of particle energy in sputtering target source and its power system generates a third pulse of batch particles. Detailed Implementation

[0021] In the following description, an embodiment of an atomic-level manufacturing method for actively controlling particle energy according to the present invention will be described with reference to the accompanying drawings.

[0022] The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation or scope of the invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions, such as vacuum acquisition and thin film thickness detection, based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein.

[0023] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. Please note that, in order to clearly demonstrate the structure of the various parts of the embodiments of the invention, the drawings are not necessarily drawn to the same scale. Identical or similar reference numerals are used to indicate identical or similar parts.

[0024] Figure 1 This is a schematic diagram of the equipment used in an atomic-level manufacturing method for actively controlling particle energy according to the present invention. Figure 1 As shown, in this embodiment, the present invention provides an atomic-level manufacturing method with active particle energy control, including a vacuum chamber 1; a workpiece holder 2; a workpiece 3; a thin film 4 obtained by the atomic-level manufacturing method; batch particles 5 controlled by pulsed plasma; particles obtained by sputtering a target material via an active particle energy sputtering target source and its power supply system, which may also be particles of active gas participating in atomic-level manufacturing in a vacuum 6; an active particle energy sputtering target source and its power supply system 7; and a sputtering target material 8 and a power supply system 9 in the active particle energy sputtering target source and its power supply system.

[0025] In this diagram, particles 5 (batch particles controlled by energy through pulsed plasma) and 6 (particles obtained by sputtering a sputtering target source and its power system via active particle energy control, and some of which may also be particles of reactive gases participating in atomic-level manufacturing in a vacuum) are only shown schematically. In reality, at any given time, only one of 5 and 6 may appear. Particle 5 merely illustrates the process of particles flying towards workpiece 3 after being generated by particle 6. Their shapes and sizes are schematic to express the process of batch particles flying towards the workpiece in a pulsed manner after obtaining energy through the control power system 9.

[0026] Figure 2 The invention presents a single-strand pulsating particle stream for atomic-level manufacturing generated when the frequency of the bipolar pulse of the power supply to the sputtering target and its power system is not too high, which is actively controlled by particle energy. Figure 2 This is just a schematic diagram of the generation of a batch of particles; other structures and... Figure 1 same.

[0027] Furthermore, when the frequency of the bipolar pulse of the power supply of the sputtering target source and its power system is increased sufficiently by actively controlling the particle energy, two or even more pulsating particle streams for atomic-level manufacturing can also be generated. Figure 3 This is a schematic diagram illustrating the generation of a batch of particles with three pulses by a power system of a sputtering target source and its power supply system under active particle energy control, according to an embodiment of the present invention. In the figure, 11 represents the generation of a batch of particles with a first pulse by a power system of a sputtering target source and its power supply system under active particle energy control; 12 represents the generation of a batch of particles with a second pulse by a power system of a sputtering target source and its power supply system under active particle energy control; and 13 represents the generation of a batch of particles with a third pulse by a power system of a sputtering target source and its power supply system under active particle energy control. Figure 3 This is just a schematic diagram of the generation of three batches of particles; other structures and... Figure 1 same.

[0028] Example 1: This implementation scheme uses a high-purity Cr target as the sputtering target material 8 in the active particle energy control sputtering target source and its power supply system, and argon as the working gas to prepare Cr thin films using an atomic-level manufacturing method with active particle energy control.

[0029] The specific steps are as follows: Step 1: Connect the atomic-level manufacturing equipment with active particle energy control sputtering target and its power system, and place the workpiece 3 on the workpiece holder 2 inside the vacuum chamber 1; Step 2: Complete the evacuation of vacuum chamber 1, and set the power parameters of the particle energy actively controlled sputtering target source and its power system as follows: negative voltage (580V), pulse width 50μs, positive voltage 200V, positive pulse width 200μs, bipolar frequency 50Hz.

[0030] Step 3: Introduce working gas into the vacuum chamber. The working gas is Ar gas with a pressure of 1 Pa. By actively controlling the parameters of the sputtering target source and its power system through particle energy, pulsating plasma is excited, thereby achieving active control of particle energy at the atomic scale. Step 4: Energy-controlled particles are deposited onto workpiece 3 for 60 minutes to complete the preparation of Cr thin film 4.

[0031] The surface and cross-sectional morphology of Cr thin films prepared on stainless steel workpieces using atomic-level manufacturing methods were examined using a field emission scanning electron microscope (SEM5000Pro). The results are as follows: Figure 4 As shown.

[0032] The hardness of the atomically manufactured Cr film was tested using a Nano-Indenter G200 nanoindenter under continuous stiffness conditions according to standard GB / T 25898-2010. The hardness was 23 GPa, which is more than twice the hardness of Cr films prepared by traditional electroplating methods.

[0033] The embodiments of an atomic-level manufacturing method for actively controlling particle energy according to the present invention have been described above. Specific features of this method, such as the multi-layer atomic stacking atomic-level manufacturing method, can be specifically designed based on the functions of the features disclosed above; these designs are all achievable by those skilled in the art. Other known features, such as vacuum acquisition, vacuum measurement, thin film thickness detection, and structural detection, are not elaborated in this invention. The disclosed technical features are not limited to combinations with other features; those skilled in the art can also make other combinations of technical features according to the purpose of the present invention to achieve the objectives of the present invention.

Claims

1. An atomic-level manufacturing method for actively controlling particle energy, characterized in that... In atomic-level manufacturing processes, sputtering targets and power systems with actively controlled particle energy are employed. The energy of the batches of particles required for atomic-level manufacturing can be actively controlled. The vacuum thin film preparation method includes the following steps: Step 1: Place the workpiece on the workpiece holder in the vacuum chamber and connect it to the atomic-level manufacturing equipment with the relevant particle energy active control sputtering target source and its power supply system; Step 2: Complete the vacuuming of the vacuum chamber and set the power parameters of the particle energy active control sputtering target source and its power system; Step 3: Introduce working gas into the vacuum chamber, and generate batches of particles by actively controlling the parameters of the sputtering target and its power system through particle energy control, thereby achieving active control of particle energy. Step 4: Energy-controlled particles are deposited onto the workpiece for atomic-level manufacturing, completing the thin film preparation.

2. The atomic-level manufacturing method with actively controlled particle energy as described in claim 1, wherein the particles used in atomic-level manufacturing are particles obtained by target sputtering through an actively controlled sputtering target source and its power supply system, and may also be particles of active gases participating in atomic-level manufacturing in a vacuum, characterized in that... The energy of these atomic-level manufacturing particles is regulated and controlled by actively controlling the sputtering target source and its power supply system.

3. The atomic-level manufacturing method for actively controlling particle energy according to claim 1, wherein the particle energy is controlled by pulsed plasma.

4. The atomic-level manufacturing method for actively controlling particle energy according to claim 1, wherein the active control of particle energy in the sputtering target source and its power supply system can generate pulsating plasma, realize the coupling of force, electricity and magnetism multi-energy fields, and complete the generation and energy control of some particles required for atomic-level manufacturing, with an energy adjustment range of 1eV~100keV.

5. An atomic-level manufacturing method for actively controlling particle energy according to claim 2, wherein the energy of the particles used in atomic-level manufacturing includes kinetic energy, potential energy, or a coupling of kinetic and potential energy.

6. The atomic-level manufacturing method for actively controlling particle energy according to claim 1, characterized in that atoms... The manufacturing process employs at least one sputtering target source and its power supply system as described in claim 1, which can actively control particle energy.

7. The atomic-level manufacturing method for actively controlling particle energy according to claim 1, characterized in that: Unlike traditional atomic-level manufacturing methods, the energy of particles used in atomic-level manufacturing is actively controlled by the particle energy active control sputtering target source and its power supply system as described in claim 1.

8. The atomic-level manufacturing method for actively controlling particle energy according to claim 1, characterized in that... In the thin film preparation process, the energy of the atomic-level manufacturing particles can be further controlled not only by the active control as described in claim 6, but also by applying a bias voltage to the workpiece.

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