A device for preparing DLC film by high frequency oscillation assisted magnetron sputtering
By using a high-frequency oscillation-assisted magnetron sputtering device, the carbon particle ionization rate is improved, and the adhesion between the DLC film and the substrate is enhanced. This solves the problems of weak film adhesion and internal stress accumulation in traditional magnetron sputtering, and enables the preparation of high-performance DLC films.
CN224337697UActive Publication Date: 2026-06-09WENZHOU UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WENZHOU UNIV
- Filing Date
- 2026-05-12
- Publication Date
- 2026-06-09
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Figure CN224337697U_ABST
Abstract
The utility model relates to vacuum coating equipment technical field especially is concerned about a kind of device of high-frequency oscillation auxiliary magnetron sputtering preparation DLC film, including vacuum sputtering cavity, vacuum system and gas delivery system, the vacuum system and gas delivery system are communicated with the inner chamber of vacuum sputtering cavity respectively, the inside of vacuum sputtering cavity is equipped with magnetron sputtering assembly, high-frequency oscillation auxiliary assembly and substrate turret assembly, plasma channel is formed between the magnetron sputtering assembly and substrate turret assembly, the high-frequency oscillation auxiliary assembly includes oscillation coil and the high-frequency oscillation power supply of oscillation coil electrical connection, the oscillation coil is set to the region corresponding plasma channel in vacuum sputtering cavity inside, the utility model breaks through the ionization limit of traditional magnetic field by introducing high-frequency oscillation field to strengthen the collision excitation of electron and particle, provides feasible path for preparing high-performance DLC film, and its technical research and development and application have important significance to break through industry bottleneck.
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