A semiconductor processing apparatus, a reaction chamber cleaning method, and a semiconductor coating apparatus

Abstract

This application relates to the field of semiconductor processing equipment technology, and discloses a semiconductor processing apparatus, a reaction chamber cleaning method, and a semiconductor coating equipment. The semiconductor processing apparatus includes: a first gas source configured to supply auxiliary cleaning gas to a spray plate via an inlet pipe, so that the auxiliary cleaning gas enters the reaction chamber via the spray plate; a second gas source configured to supply auxiliary cleaning gas via a first vent pipe and a second vent pipe, so that the auxiliary cleaning gas enters the reaction chamber via the side wall of the reaction chamber; and a radio frequency electrode disposed within the reaction chamber, configured to plasma-ionize the auxiliary cleaning gas within the reaction chamber, so that the ionized auxiliary cleaning gas bombards the particulate byproducts secondary deposited within the reaction chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment technology, specifically to a semiconductor processing apparatus, a reaction chamber cleaning method, and a semiconductor coating equipment. Background Technology

[0002] Currently, in the fabrication of plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) thin films, the deposition reaction chamber typically consists of a spray plate acting as the upper electrode and a heating plate supporting the silicon wafer and acting as the lower electrode. During the process, radio frequency (RF) is applied to create plasma, which participates in the reaction and generates the thin film. Typically, reaction gases flow into the chamber from above the spray plate, and excess reaction gases and byproducts are extracted through a evacuation line.

[0003] In related technologies, the reaction chamber must be cleaned after each coating process. Existing cleaning methods generally involve using a remote plasma source (RPS) for chamber cleaning. That is, the cleaning gas is activated by the remote plasma source, flows through the spray plate, and diffuses evenly to clean the inner wall of the reaction chamber, the spray plate, and the heating plate, etc.

[0004] In the process of implementing the embodiments of this disclosure, at least the following problems were found in the related art:

[0005] When RPS cleaning gas is injected into the reaction chamber via a remote plasma source for RPS cleaning, some particulate byproducts are deposited again at various locations in the reaction chamber, resulting in residual deposits in the reaction chamber, forming particle adhesion, which affects the process reaction and even the product yield.

[0006] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0007] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.

[0008] This disclosure provides a semiconductor processing apparatus, a reaction chamber cleaning method, and a semiconductor coating equipment, which thoroughly clean particulate byproducts that are secondary deposited in the reaction chamber by means of ion bombardment, thereby avoiding residual deposits in the reaction chamber.

[0009] In some embodiments, the semiconductor processing apparatus includes:

[0010] A first gas source is configured to deliver auxiliary cleaning gas to a spray plate through an air inlet pipe, so that the auxiliary cleaning gas enters the reaction chamber via the spray plate.

[0011] The second gas source is configured to deliver auxiliary cleaning gas through the first and second vent lines, so that the auxiliary cleaning gas enters the reaction chamber via the side wall of the reaction chamber.

[0012] A radio frequency electrode, disposed within the reaction chamber, is configured to plasma-encode the auxiliary cleaning gas within the reaction chamber, thereby enabling the auxiliary cleaning gas in an ionic state to bombard the particulate byproducts that have been deposited secondary within the reaction chamber.

[0013] Optionally, the semiconductor processing apparatus further includes:

[0014] A venting ring is disposed between the reaction chamber and the spray plate, and is arranged along the side wall of the reaction chamber and surrounds the spray plate. The first venting pipe is connected to the venting ring through the side wall of the reaction chamber.

[0015] Optionally, the vent ring includes:

[0016] Multiple first vents are provided, each of which faces the gap between the spray plate and the vent ring, so that auxiliary cleaning gas from the first vent pipe enters the interior of the reaction chamber through each first vent and the gap between the plates.

[0017] Optionally, the semiconductor processing apparatus further includes:

[0018] The second vent is located on the side wall of the reaction chamber and below the heating plate. Auxiliary cleaning gas from the second vent pipe enters the interior of the reaction chamber from below the heating plate through the second vent.

[0019] Optionally, the semiconductor processing apparatus further includes:

[0020] A control valve, wherein the input end of the control valve is connected to the second gas source, and the output end of the control valve is connected to the first venting line and the second venting line respectively;

[0021] The control valve is configured to control the connection or disconnection of the first vent line and the second vent line with the second gas source, respectively.

[0022] Optionally, the semiconductor processing apparatus further includes:

[0023] An RF controller, electrically connected to both the RF electrode and the control valve, is configured to output a control signal based on the operating conditions of the control valve.

[0024] An RF power source, electrically connected to the RF electrode via the RF controller, is configured to apply RF power to the RF electrode according to a control signal from the RF controller.

[0025] Optionally, the auxiliary cleaning gas in the first gas source enters the top of the reaction chamber through the air inlet pipe and the spray plate to form a gas flow path A;

[0026] The auxiliary cleaning gas in the second gas source enters the cavity edge of the reaction chamber through the control valve, the first vent pipe, the vent ring and the first vent hole to form gas flow path B;

[0027] The auxiliary cleaning gas in the second gas source enters the bottom of the reaction chamber through the control valve, the second vent pipe, and the second vent hole to form a gas flow path C.

[0028] Optionally, the auxiliary cleaning gas includes argon, nitrogen, or ammonia.

[0029] In some embodiments, the reaction chamber cleaning method is applied to the semiconductor processing apparatus described in this application. The semiconductor processing apparatus includes: a first gas source configured to supply auxiliary cleaning gas to a spray plate via an inlet pipe, so that the auxiliary cleaning gas enters the reaction chamber via the spray plate; a second gas source configured to supply auxiliary cleaning gas via a first vent pipe and a second vent pipe, so that the auxiliary cleaning gas enters the reaction chamber via the side wall of the reaction chamber; and a radio frequency electrode disposed within the reaction chamber, configured to plasma-ionize the auxiliary cleaning gas within the reaction chamber, so that the auxiliary cleaning gas in an ionic state bombards the particulate byproducts deposited within the reaction chamber.

[0030] The reaction chamber cleaning method includes:

[0031] After one round of RPS cleaning process is completed, auxiliary cleaning gas is introduced into the reaction chamber through the first gas source and / or the second gas source;

[0032] When the radio frequency electrode is turned on, the auxiliary cleaning gas in the reaction chamber will be plasma-ionized, and the auxiliary cleaning gas in the ionic state will bombard the particulate byproducts that are deposited in the reaction chamber.

[0033] The particulate byproducts that have volatilized into gas after being bombarded by ions are extracted from the reaction chamber.

[0034] In some embodiments, the semiconductor coating apparatus includes the semiconductor processing apparatus described in this application, wherein the semiconductor processing apparatus includes:

[0035] The intake module is configured to introduce auxiliary cleaning gas into the reaction chamber through a first gas source and / or a second gas source after a round of RPS cleaning process;

[0036] The radio frequency module is configured to turn on the radio frequency electrode to ionize the auxiliary cleaning gas in the reaction chamber, and to bombard the particulate byproducts that are deposited in the reaction chamber with ions through the auxiliary cleaning gas in the ionic state.

[0037] The extraction module is configured to extract particulate byproducts that have volatilized into gas after being bombarded by ions from the reaction chamber.

[0038] The plasma processing chamber and reaction chamber cleaning method and processing equipment provided in this disclosure can achieve the following technical effects:

[0039] Auxiliary cleaning gas is introduced into the reaction chamber via a first gas source through the spray plate, and then further introduced into the reaction chamber via a second gas source through the side wall. The auxiliary cleaning gas within the reaction chamber is then plasma-ionized using radio frequency electrodes, allowing the ionized gas to bombard the secondary deposited particulate byproducts within the reaction chamber. This method enables ion bombardment of particulate byproducts re-deposited at various locations within the reaction chamber after RPS cleaning. Since ion bombardment is a physical reaction that does not generate new substances, it thoroughly removes residual deposits from the reaction chamber, achieving a complete cleaning purpose. This prevents deposit formation and particle adhesion, ensuring process reliability and improving product yield.

[0040] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description

[0041] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein:

[0042] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of this disclosure;

[0043] Figure 2 This is a schematic diagram of the structure of another semiconductor processing device provided in an embodiment of this disclosure;

[0044] Figure 3 This is a schematic diagram of the structure of another semiconductor processing device provided in an embodiment of this disclosure;

[0045] Figure 4 This is a flowchart of a reaction chamber cleaning method provided in an embodiment of this disclosure;

[0046] Figure 5 This is a schematic diagram of the frame structure of a semiconductor coating apparatus provided in an embodiment of this disclosure.

[0047] Figure label:

[0048] 1-First gas source; 2-Second gas source; 3-Inlet pipe; 4-Spray plate; 5-Ventilation ring; 6-Reaction chamber; 7-First ventilation pipe; 71-First vent; 8-Second ventilation pipe; 81-Second vent; 9-Control valve; 10-RF power source; 11-RF electrode; 12-RF controller; 13-Gap between plates; 14-Heating plate. Detailed Implementation

[0049] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.

[0050] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this disclosure described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0051] In this disclosure, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for better description of the embodiments of this disclosure and their implementations, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Furthermore, some of the aforementioned terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this disclosure according to the specific circumstances.

[0052] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0053] Unless otherwise stated, the term "multiple" means two or more.

[0054] In this embodiment of the disclosure, the character " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B means: A or B.

[0055] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0056] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.

[0057] In related technologies, semiconductor chip manufacturing and cleaning processes include the generation of plasma, and the positive ions and / or free radicals generated after plasma dissociation. These positive ions and / or free radicals are used to directly or indirectly influence changes on the surfaces of components exposed within a cavity. Plasma is typically generated by applying radio frequency (RF) power to a reactive gas in a controlled environment, thereby exciting and converting the reactive or cleaning gas into the desired plasma.

[0058] Combination Figure 1As shown, this disclosure provides a semiconductor processing apparatus, including a first gas source 1, a second gas source 2, and a radio frequency electrode 11. The first gas source 1 is configured to supply auxiliary cleaning gas to a spray plate 4 via an inlet pipe 3, allowing the auxiliary cleaning gas to enter a reaction chamber 6 via the spray plate 4. The second gas source 2 is configured to supply auxiliary cleaning gas via a first vent pipe 7 and a second vent pipe 8, allowing the auxiliary cleaning gas to enter the reaction chamber 6 via its sidewall. The radio frequency electrode 11 is disposed within the reaction chamber 6 and configured to plasma-ionize the auxiliary cleaning gas within the reaction chamber 6, so that the ionized auxiliary cleaning gas bombards the particulate byproducts secondary-deposited within the reaction chamber 6.

[0059] Using the plasma processing chamber provided in this embodiment, auxiliary cleaning gas is introduced into the reaction chamber 6 via a first gas source 1 through a spray plate 4, and auxiliary cleaning gas is introduced into the reaction chamber 6 via a second gas source 2 through the side wall of the reaction chamber 6. Then, the auxiliary cleaning gas in the reaction chamber 6 is plasma-ionized through a radio frequency electrode 11, so that the auxiliary cleaning gas in an ionic state bombards the particulate byproducts that have been re-deposited in the reaction chamber 6. In this way, particulate byproducts re-deposited in the reaction chamber 6 after RPS cleaning can be bombarded with ions. Ion bombardment is a physical reaction that does not generate new substances, thereby thoroughly removing the residual deposits in the reaction chamber 6, achieving sufficient cleaning, preventing the formation of particles, ensuring process reliability, and improving product yield.

[0060] In one embodiment of this application, combined with Figure 1 and Figure 2 As shown, the semiconductor processing apparatus of this application further includes a venting ring 5 and a plurality of first vents 71 disposed on the venting ring 5, as well as a second vent 81. The venting ring 5 is disposed between the reaction chamber 6 and the spray plate 4, and is arranged along the side wall of the reaction chamber 6 and surrounds the spray plate 4. The first venting conduit 7 communicates with the venting ring 5 via the side wall of the reaction chamber 6. Each of the plurality of first vents 71 faces the inter-plate gap 13 between the spray plate 4 and the venting ring 5, allowing auxiliary cleaning gas from the first venting conduit 7 to enter the interior of the reaction chamber 6 through the inter-plate gap 13 via each first vent 71. The second vent 81 is located on the side wall of the reaction chamber 6 and below the heating plate 14. Auxiliary cleaning gas from the second venting conduit 81 enters the interior of the reaction chamber 6 from below the heating plate 14 via the second vent 81.

[0061] In this way, the auxiliary cleaning gas of this application can be introduced from multiple positions in the reaction chamber 6, so that during the subsequent ion bombardment process, the ions used for bombardment can fill the entire reaction chamber 6, thereby thoroughly cleaning the inner cavity of the reaction chamber 6.

[0062] In one embodiment of this application, combined with Figure 1 and Figure 2 As shown, the semiconductor processing device of this application also includes a control valve 9, a radio frequency controller 12, and a radio frequency power source 10. The control valve 9 includes an input terminal and an output terminal. The input terminal of the control valve 9 is connected to the second gas source 2, and the output terminal is connected to the first ventilation pipe 7 and the second ventilation pipe 8, respectively. Through the above connection method, the control valve 9 is configured to control the connection or disconnection of the first ventilation pipe 7 and the second ventilation pipe 8 with the second gas source 2. That is, the first ventilation pipe 7 and the second ventilation pipe 8 can be connected to the second gas source 2 simultaneously, or one pipe can be connected while the other is disconnected, or both pipes can be disconnected. The radio frequency controller 12 is electrically connected to the radio frequency electrode 11 and the control valve 9, and is configured to output a control signal according to the operating condition of the control valve 9. The operating conditions of this application include the connection between the first ventilation pipe 7 and the second ventilation pipe 8 and the second gas source 2. That is, the first ventilation pipe 7 and the second ventilation pipe 8 can be connected to the second gas source 2 at the same time, or one pipe can be connected while the other pipe is cut off, or both pipes can be cut off.

[0063] The radio frequency power source 10 of this application is electrically connected to the radio frequency electrode 11 via a radio frequency controller 12. The radio frequency power source 10 is configured to apply radio frequency power to the radio frequency electrode 11 according to a control signal from the radio frequency controller 12. The radio frequency controller 12 can control the output power of the radio frequency power source 10 according to the control signal. For example, when the first ventilation pipe 7 and the second ventilation pipe 8 are simultaneously connected to the second gas source 2, the radio frequency controller 12 can control the radio frequency power source 10 to output a higher power according to the control signal; when one of the ventilation pipes is connected to the second gas source 2, the radio frequency controller 12 can control the radio frequency power source 10 to output a normal power according to the control signal; when both pipes are disconnected from the second gas source 2, the radio frequency controller 12 can control the radio frequency power source 10 to not output power according to the control signal.

[0064] In this way, this application can control the operating conditions of the first ventilation line 7 and the second ventilation line 8 in conjunction with the control valve 9. At the same time, the output power of the radio frequency power source 10 can be adjusted according to different operating conditions, thereby improving the efficiency of ion bombardment, reducing the cost and energy consumption of ion bombardment, and adapting to different equipment operating conditions and lifespans.

[0065] In one practical application of this application, combined with Figure 3As shown, the auxiliary cleaning gas in the first gas source 1 enters the top of the reaction chamber 6 through the inlet pipe 3 and the spray plate 4 to form gas flow path A; the auxiliary cleaning gas in the second gas source 2 enters the cavity edge of the reaction chamber 6 through the control valve 9, the first vent pipe 7, the vent ring 5 and the first vent hole to form gas flow path B; the auxiliary cleaning gas in the second gas source 2 enters the bottom of the reaction chamber 6 through the control valve 9, the second vent pipe 8 and the second vent hole to form gas flow path C.

[0066] In this way, engineers can select any one or more gas flow paths to introduce auxiliary cleaning gas according to the actual situation, thereby controlling the distribution of auxiliary cleaning gas in the reaction chamber 6, and further targeting specific locations in the reaction chamber 6 (such as the side wall of the reaction chamber 6, the surface of the spray plate 4 and / or the bottom of the heating plate 14) with targeted ion bombardment, thereby thoroughly cleaning the particulate by-products that have been deposited in the reaction chamber 6.

[0067] Optionally, the auxiliary cleaning gas includes argon, nitrogen, or ammonia. In related technologies, group III element nitride films such as aluminum nitride (AlN) and gallium nitride (GaN) represent the third generation of semiconductor materials, following first-generation cadmium (Ge) and silicon (Si) semiconductors and second-generation gallium arsenide (GaAs) and indium phosphide (InP) compound semiconductors. Therefore, this application can select argon, nitrogen, or ammonia as auxiliary cleaning gases for ion bombardment, taking into account the residual particulate byproducts generated after RPS cleaning in common deposition processes in related technologies.

[0068] Combination Figure 4 As shown, this disclosure provides a reaction chamber cleaning method applied to the semiconductor processing apparatus described in this application. The semiconductor processing apparatus includes: a first gas source configured to supply auxiliary cleaning gas to a spray plate via an inlet pipe, so that the auxiliary cleaning gas enters the reaction chamber via the spray plate; a second gas source configured to supply auxiliary cleaning gas via a first vent pipe and a second vent pipe, so that the auxiliary cleaning gas enters the reaction chamber via the side wall of the reaction chamber; and a radio frequency electrode disposed within the reaction chamber, configured to plasma-ionize the auxiliary cleaning gas within the reaction chamber, so that the auxiliary cleaning gas in an ionic state bombards the particulate byproducts deposited within the reaction chamber.

[0069] The reaction chamber cleaning method includes:

[0070] Step 401: After one round of RPS cleaning process is completed, auxiliary cleaning gas is introduced into the reaction chamber through the first gas source and / or the second gas source.

[0071] Step 402: Turn on the radio frequency electrode to ionize the auxiliary cleaning gas in the reaction chamber, and bombard the particulate byproducts that are deposited in the reaction chamber with ions through the auxiliary cleaning gas in the ionic state.

[0072] Step 403: Remove the particulate byproducts that have volatilized into gas after being bombarded by ions from the reaction chamber.

[0073] The reaction chamber cleaning method provided in this embodiment involves using a first gas source to introduce auxiliary cleaning gas into the reaction chamber via a spray plate, and a second gas source to introduce auxiliary cleaning gas into the reaction chamber via its sidewall. Then, the auxiliary cleaning gas within the reaction chamber is plasma-ionized using a radio frequency electrode, allowing the ionized auxiliary cleaning gas to bombard the secondary deposited particulate byproducts within the reaction chamber. This method enables ion bombardment of particulate byproducts secondary deposited at various locations within the reaction chamber after RPS cleaning. Since ion bombardment is a physical reaction that does not generate new substances, it thoroughly removes residual deposits from the reaction chamber, achieving a complete cleaning purpose. This avoids the formation of particles adhering to the deposits, ensuring process reliability and improving product yield.

[0074] Combination Figure 5 As shown, this disclosure provides a semiconductor coating apparatus, including the semiconductor processing device described in this application, wherein the semiconductor processing device includes:

[0075] The intake module 501 is configured to introduce auxiliary cleaning gas into the reaction chamber through a first gas source and / or a second gas source after a round of RPS cleaning process.

[0076] The radio frequency module 502 is configured to turn on the radio frequency electrode to ionize the auxiliary cleaning gas in the reaction chamber, and to bombard the particulate byproducts that are deposited in the reaction chamber with ions through the auxiliary cleaning gas in the ionic state.

[0077] The extraction module 503 is configured to extract particulate byproducts that have volatilized into gas after being bombarded by ions from the reaction chamber.

[0078] Using the semiconductor coating equipment provided in this embodiment, auxiliary cleaning gas is introduced into the reaction chamber via a first gas source through the spray plate, and auxiliary cleaning gas is introduced into the reaction chamber via a second gas source through the side wall of the reaction chamber. Then, the auxiliary cleaning gas in the reaction chamber is plasma-ionized by a radio frequency electrode, so that the auxiliary cleaning gas in the ionic state bombards the particulate byproducts that have been re-deposited in the reaction chamber. In this way, particulate byproducts that have been re-deposited in various locations within the reaction chamber after RPS cleaning can be bombarded with ions. Ion bombardment is a physical reaction that does not generate new substances, thereby thoroughly removing the residual deposits in the reaction chamber, achieving sufficient cleaning, preventing the formation of particles, ensuring process reliability, and improving product yield.

[0079] The foregoing description and accompanying drawings fully illustrate embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the order of operation may vary. Parts and features of some embodiments may be included or substituted for parts and features of other embodiments. Embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A semiconductor processing apparatus, characterized in that, include: A first gas source is configured to deliver auxiliary cleaning gas to a spray plate through an air inlet pipe, so that the auxiliary cleaning gas enters the reaction chamber via the spray plate. The second gas source is configured to deliver auxiliary cleaning gas through the first and second vent lines, so that the auxiliary cleaning gas enters the reaction chamber via the side wall of the reaction chamber. A radio frequency electrode, disposed within the reaction chamber, is configured to plasma-encode the auxiliary cleaning gas within the reaction chamber, thereby enabling the auxiliary cleaning gas in an ionic state to bombard the particulate byproducts that have been deposited secondary within the reaction chamber.

2. The semiconductor processing apparatus according to claim 1, characterized in that, Also includes: A venting ring is disposed between the reaction chamber and the spray plate, and is arranged along the side wall of the reaction chamber and surrounds the spray plate. The first venting pipe is connected to the venting ring through the side wall of the reaction chamber.

3. The semiconductor processing apparatus according to claim 2, characterized in that, The ventilation ring includes: Multiple first vents are provided, each of which faces the gap between the spray plate and the vent ring, so that auxiliary cleaning gas from the first vent pipe enters the interior of the reaction chamber through each first vent and the gap between the plates.

4. The semiconductor processing apparatus according to claim 1, characterized in that, Also includes: The second vent is located on the side wall of the reaction chamber and below the heating plate. Auxiliary cleaning gas from the second vent pipe enters the interior of the reaction chamber from below the heating plate through the second vent.

5. The semiconductor processing apparatus according to claim 1, characterized in that, Also includes: A control valve, wherein the input end of the control valve is connected to the second gas source, and the output end of the control valve is connected to the first venting line and the second venting line respectively; The control valve is configured to control the connection or disconnection of the first vent line and the second vent line with the second gas source, respectively.

6. The semiconductor processing apparatus according to claim 5, characterized in that, Also includes: An RF controller, electrically connected to both the RF electrode and the control valve, is configured to output a control signal based on the operating conditions of the control valve. An RF power source, electrically connected to the RF electrode via the RF controller, is configured to apply RF power to the RF electrode according to a control signal from the RF controller.

7. The semiconductor processing apparatus according to claim 1, characterized in that, The auxiliary cleaning gas in the first gas source enters the top of the reaction chamber through the air inlet pipe and the spray plate to form gas flow path A; The auxiliary cleaning gas in the second gas source enters the cavity edge of the reaction chamber through the control valve, the first vent pipe, the vent ring and the first vent hole to form gas flow path B; The auxiliary cleaning gas in the second gas source enters the bottom of the reaction chamber through the control valve, the second vent pipe, and the second vent hole to form a gas flow path C.

8. The semiconductor processing apparatus according to any one of claims 1 to 7, characterized in that, The auxiliary cleaning gas includes argon, nitrogen, or ammonia.

9. A method for cleaning a reaction chamber, characterized in that, An apparatus for processing semiconductors as described in any one of claims 1 to 8, the apparatus comprising: a first gas source configured to supply auxiliary cleaning gas to a spray plate via an inlet pipe, such that the auxiliary cleaning gas enters a reaction chamber via the spray plate; a second gas source configured to supply auxiliary cleaning gas via a first vent pipe and a second vent pipe, such that the auxiliary cleaning gas enters the reaction chamber via a side wall of the reaction chamber; and a radio frequency electrode disposed within the reaction chamber, configured to plasma-encode the auxiliary cleaning gas within the reaction chamber, such that the ionized auxiliary cleaning gas bombards particulate byproducts deposited within the reaction chamber. The reaction chamber cleaning method includes: After one round of RPS cleaning process is completed, auxiliary cleaning gas is introduced into the reaction chamber through the first gas source and / or the second gas source; When the radio frequency electrode is turned on, the auxiliary cleaning gas in the reaction chamber will be plasma-ionized, and the auxiliary cleaning gas in the ionic state will bombard the particulate byproducts that are deposited in the reaction chamber. The particulate byproducts that have volatilized into gas after being bombarded by ions are extracted from the reaction chamber.

10. A semiconductor coating apparatus, characterized in that, The semiconductor processing apparatus includes the semiconductor processing apparatus as described in any one of claims 1 to 8, wherein the semiconductor processing apparatus comprises: The intake module is configured to introduce auxiliary cleaning gas into the reaction chamber through a first gas source and / or a second gas source after a round of RPS cleaning process; The radio frequency module is configured to turn on the radio frequency electrode to ionize the auxiliary cleaning gas in the reaction chamber, and to bombard the particulate byproducts that are deposited in the reaction chamber with ions through the auxiliary cleaning gas in the ionic state. The extraction module is configured to extract particulate byproducts that have volatilized into gas after being bombarded by ions from the reaction chamber.

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