An optical chip, an optoelectronic conversion module, and related devices

Abstract

This application provides an optical chip, a photoelectric conversion module, and related equipment. The optical chip includes a substrate and an optical device. The process of electrically connecting the optical device to the substrate eliminates the need for solder, avoiding random displacement between the optical device and the substrate caused by solder melting, and improving the mounting accuracy of the optical chip. The substrate includes a convex region and a concave region. The concave region is concave relative to the surface of the convex region. The convex region fixes the light transmission medium. Along a direction perpendicular to the bottom of the concave region, the optical device and the concave region have a first bonding layer formed by thermal bonding. The first bonding layer is used to moltenly bond the optical device to the concave region. The optical device has an optical port, which is aligned with the light transmission medium. The optical device is used to transmit optical signals between the optical port and the light transmission medium.

Description

Technical Field

[0001] This application relates to the field of optical fiber communication, and in particular to an optical chip, a photoelectric conversion module, and related equipment. Background Technology

[0002] Optical chips are one of the main development technologies for applications in data centers, optical computing, and optical access, and they have advantages such as high integration, low cost, and low power consumption.

[0003] Optical chips require the encapsulation of optical devices (such as light sources or optical amplifiers) onto a substrate. Specifically, first, an area is etched onto the substrate, the optical device is inverted and mounted into the etched area, and solder is placed between the electrical interface of the optical device and the electrical interface on the substrate. Second, a laser is applied to thermally melt the solder, thus welding the electrical interface of the optical device to the electrical interface on the substrate.

[0004] When an optical device's electrical interface is electrically connected to an electrical interface on a substrate, the optical port of the optical device needs to be aligned with the optical waveguide on the substrate to enable optical signal transmission between the optical device and the waveguide. However, during the solder melting process, the optical device and the substrate are subjected to high temperatures, causing random displacement and reducing the mounting accuracy. For example, this can reduce the coupling accuracy between the optical port of the optical device and the optical waveguide on the substrate, or cause the electrical interface of the optical device and the electrical interface on the substrate to be misaligned, reducing the stability and reliability of the electrical connection and thus affecting the electrical performance of the optical chip. Summary of the Invention

[0005] This application provides an optical chip, a photoelectric conversion module, and related equipment. The optical chip includes a substrate and an optical device. The process of electrically connecting the optical device to the substrate eliminates the need for solder, avoiding random displacement between the optical device and the substrate caused by solder melting, and improving the mounting accuracy of the optical chip.

[0006] This application provides an optical chip, including a substrate and an optical device. The substrate includes a convex region and a concave region. The concave region is concave relative to the surface of the convex region. The convex region fixes an optical transmission medium. Along a direction perpendicular to the bottom of the concave region, the optical device and the concave region have a first bonding layer formed by thermal bonding. The first bonding layer is used to moltenly bond the optical device to the concave region. The optical device has an optical port, which is aligned with the optical transmission medium. The optical device is used to transmit optical signals between the optical port and the optical transmission medium.

[0007] As shown in this aspect, the first bonding layer fused and bonded the optical device to the recessed region, thereby fixing the relative position between the optical device and the optical chip. This achieves precise alignment between the optical port of the optical device and the optical transmission medium, effectively improving the coupling efficiency of optical signal transmission between the optical device and the optical transmission medium, and reducing optical power loss during optical signal transmission. Furthermore, the first bonding layer is formed by thermal bonding, enhancing the stability and reliability of the fixing structure between the optical device and the substrate, which is beneficial for maintaining the performance of the optical chip.

[0008] Based on the first aspect, in one optional implementation, the bottom of the concave region bulges outward to form N pillars, where N is any integer greater than or equal to 1. Along a direction perpendicular to the bottom of the concave region, the N pillars are located between the optical device and the bottom of the concave region, and the first bonding layer is formed between the N pillars and the optical device. The N pillars are used to align the optical port of the optical device with the optical transmission medium.

[0009] By employing this implementation method, the first bonding layer and the N pillars enable precise alignment between the optical port of the optical device and the optical transmission medium in space, effectively improving the coupling efficiency of optical signal transmission between the optical device and the optical transmission medium. For example, the optical signal emitted from the optical transmission medium can be received by the optical device as much as possible, and the optical signal emitted from the optical device can be received by the optical transmission medium as much as possible, while reducing the optical power loss during the transmission of optical signals between the optical device and the optical transmission medium.

[0010] Based on the first aspect, in one optional implementation, the optical chip includes M first bonding layers, where M is any integer greater than or equal to 1 and less than or equal to N, each first bonding layer is located on the target surface of one of the N pillars, and the target surface of the pillar and the optical device face each other.

[0011] By adopting this implementation method, while improving the coupling efficiency between the optical device and the optical transmission medium in the first bonding layer, it is possible to ensure that the waveform, frequency and phase characteristics of the optical signal do not change significantly during transmission, thereby ensuring signal integrity.

[0012] Based on the first aspect, in one optional implementation, the optical device includes a first electrical interface, the concave region includes a second electrical interface, the first electrical interface and the second electrical interface face each other along a direction perpendicular to the bottom of the concave region, and the first electrical interface and the second electrical interface are electrically connected; the first electrical interface has a first orthographic projection on the bottom of the concave region, the second electrical interface has a second orthographic projection on the bottom of the concave region, and each of the pillars has a third orthographic projection on the bottom of the concave region, wherein the first orthographic projection and the second orthographic projection at least partially overlap, and the second orthographic projection and the third orthographic projection are isolated from each other.

[0013] This implementation method ensures that the first electrical interface can be successfully connected to the second electrical interface, thereby realizing the electrical connection between the optical device and the substrate.

[0014] Based on the first aspect, in one optional implementation, a second bonding layer is formed by thermal bonding between the first electrical interface and the second electrical interface. The second bonding layer is used to melt-bond the first electrical interface to the second electrical interface, and the first electrical interface is electrically connected to the second electrical interface through the second bonding layer.

[0015] Using this implementation, the electrical connection between the optical device and the optical chip does not require solder; only laser injection on the column is needed. Since there is no liquid medium between the optical device and the optical chip, random displacement between them is suppressed, thus ensuring that their relative positions remain fixed. This effectively improves the accuracy of the electrical connection between the optical device and the optical chip, thereby enhancing its stability and reliability. Furthermore, by effectively suppressing random displacement between the optical device and the optical chip, the coupling accuracy between the optical device and the optical transmission medium is improved, reducing the optical power loss of the optical signal coupling between the optical device and the optical transmission medium.

[0016] Based on the first aspect, in one optional implementation, along a direction perpendicular to the bottom of the recessed region, the first bonding layer has a first contact surface and a second contact surface positioned opposite each other, the first contact surface contacting the optical device, and the second contact surface contacting the bottom of the recessed region.

[0017] This implementation, based on the first bonding layer, achieves fixed relative positions between the optical device and the substrate. This improves the coupling efficiency of optical signals between the optical port of the optical device and the optical transmission medium, and reduces the optical power loss during signal transmission. Because the first bonding layer is formed with the optical chip directly contacting the bottom of the recessed region, potential contact problems such as voids and misalignments between the optical chip and the bottom of the recessed region are effectively avoided, thus improving the structural reliability between the optical device and the substrate.

[0018] Based on the first aspect, in one optional implementation, along a direction perpendicular to the bottom of the recessed region, the optical device has a first surface and a second surface positioned opposite each other, the first surface and the recessed region facing each other, the second surface including a third electrical interface, the substrate including a fourth electrical interface, and the third electrical interface being electrically connected to the fourth electrical interface via wire bonding.

[0019] Using this implementation method, the optical device and the substrate are electrically connected by wire bonding, which helps to improve the optical chip's ability to support higher transmission rates.

[0020] Based on the first aspect, in one optional implementation, the first bonding layer is formed in a teardrop or spindle shape, and along a direction perpendicular to the surface of the substrate, the shape has a first end and a second end, and the first end, the second end and the substrate are arranged sequentially, along a direction parallel to the surface of the substrate, the cross-sectional area of ​​the second end is larger than the cross-sectional area of ​​the first end.

[0021] This implementation effectively increases the bonding strength of the first bonding layer, thereby enhancing the fixation strength between the optical device and the concave region.

[0022] Based on the first aspect, in one optional implementation, along a direction parallel to the substrate surface, the first bonding layer includes a central region and an outer region, the outer region surrounding the outer periphery of the central region, the central region forming the morphology, and the refractive index of the central region being greater than that of the outer region.

[0023] This implementation effectively increases the bonding strength of the first bonding layer, thereby improving the reliability of the optical chip structure.

[0024] A second aspect of this application provides a photoelectric conversion module, including an optical chip as described in any of the first aspects above, the optical chip encapsulating a processor and an optical fiber adapter. The optical fiber adapter is used to connect the optical transmission medium and a transmission optical fiber. The optical transmission medium is used to receive a first optical signal from the transmission optical fiber via the optical fiber adapter and transmit the first optical signal to the optical device. The optical device is used to perform photoelectric conversion on the first optical signal to obtain a first electrical signal and send the first electrical signal to the processor. Alternatively, the optical device is used to receive a second electrical signal from the processor, perform electro-optic conversion on the second electrical signal to obtain a second optical signal, and transmit the second optical signal to the optical transmission medium. The optical transmission medium is used to transmit the second optical signal to the transmission optical fiber via the optical fiber adapter. For an explanation of the beneficial effects of this aspect, please refer to the first aspect; specific details will not be repeated here.

[0025] A third aspect of this application provides a photoelectric co-packaged chip, including a switching substrate, a logic processing chip, and a photoelectric conversion module as described in the second aspect above, wherein the logic processing chip and the photoelectric conversion module are both soldered onto the switching substrate. For an explanation of the advantages of this aspect, please refer to the first aspect, which will not be elaborated upon here.

[0026] This application provides a fourth aspect of an optical communication device, including a housing, a circuit board, and a photoelectric conversion module as described in any of the second aspects. The housing is used to fix the circuit board inside, and the photoelectric conversion module is encapsulated on the surface of the circuit board. For an explanation of the advantages of this aspect, please refer to the first aspect; specific details will not be repeated here.

[0027] This application provides a radar system, including a controller and an optical chip connected to the controller, the optical chip being as described in any of the first aspects above; the optical device includes a laser, the controller is configured to send a first detection electrical signal to the laser, the laser is configured to convert the first detection electrical signal into a first detection optical signal and transmit the first detection optical signal to an optical transmission medium, the first detection optical signal being used to detect relevant information of a target object; or, the optical device includes a detector, the optical transmission medium is configured to transmit a second detection optical signal reflected by the target object to the detector, the detector is configured to convert the second detection optical signal into a second detection electrical signal, and the controller is configured to obtain relevant information of the target object based on the second detection electrical signal. For an explanation of the beneficial effects of this aspect, please refer to the first aspect, which will not be elaborated further.

[0028] The sixth aspect of this application provides a vehicle, including a vehicle body and a radar fixed to the vehicle body, the radar being as described in the fifth aspect, and will not be repeated here. Attached Figure Description

[0029] Figure 1 This is a side view example of the optical chip provided in the first embodiment of this application;

[0030] Figure 2 for Figure 1 The diagram shows a top view of the optical chip structure.

[0031] Figure 3a This is a packaging example diagram of one embodiment of the optical chip provided in this application;

[0032] Figure 3b for Figure 3a A structural example diagram of the first bonding layer is provided;

[0033] Figure 4 Example diagram of existing optical chip packaging;

[0034] Figure 5 This is a side view example of the optical chip provided in the second embodiment of this application;

[0035] Figure 6 A structural example diagram of one embodiment of the photoelectric conversion module provided in this application;

[0036] Figure 7 This is an example structural diagram of the optoelectronic co-packaged chip provided in this application;

[0037] Figure 8 An example structural diagram of one embodiment of the radar provided in this application;

[0038] Figure 9 An example structural diagram of one embodiment of the vehicle provided in this application. Detailed Implementation

[0039] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0040] This application provides an optical chip that can be applied to various types of optical communication devices. These devices can be optical transmission devices, optical access devices, routers, switches, wireless base stations, wireless remote access devices, wireless baseband signal processing devices, etc., or they can be computing servers (commonly referred to as servers), high-performance computers (HPCs), storage servers, or memory resource pools. For example, if this optical communication device is applied to a passive optical network (PON), it can be an optical network unit (ONU), an optical network terminal (ONT), or an optical line terminal (OLT). Similarly, if it is applied to an optical transport network (OTN), it can be an OTN device. Furthermore, if it is applied to a data center network (DCN) or a metropolitan area network, it can be a server, etc. For example, if optical communication equipment is used in radio-over-fiber (ROF) communication, then the optical communication equipment can be a central station (CS) or a base station (BS).

[0041] Optical chips perform many key functions in the system, such as high-speed modulation of optical signals, detection of optical signals, transmission and routing of optical signals, wavelength division multiplexing of optical signals, and demultiplexing of optical signals. Figure 1 This is a side view example of the structure of the first embodiment of the optical chip provided in this application. Figure 2 for Figure 1 The diagram shows a top view of an example optical chip structure. The optical chip 100 shown in this embodiment includes a substrate 101. Figure 1 The diagram shown is an example of the structure of the optical chip 100 in the XZ plane. Figure 2 The diagram shows an example of the structure of the optical chip 100 in the XY plane. The surface of the substrate 101 extends along the XY plane or along a direction parallel to the XY plane. The XY plane includes intersecting X and Y directions; for example, the X direction is perpendicular to the Y direction. The optical signal in the optical chip 100 is transmitted along the X direction. The XZ plane includes X and Z directions; the Z direction intersects the XY plane; for example, the Z direction is perpendicular to the XY plane.

[0042] The substrate 101 includes a convex region 111 and a concave region 112 that is recessed relative to the convex region 111. The convex region 111 is used to fix the optical transmission medium 102, and the concave region 112 is used to fix the optical device 103. The substrate 101 may be made of silicon as the substrate material. Silicon has good electrical conductivity and thermal stability, and is easy to process and manufacture; no specific method is limited. The convex region 111 includes K optical transmission media 102, where K is any integer greater than or equal to 1. The optical transmission medium 102 is used to transmit optical signals. The optical transmission medium 102 can be made of silicon dioxide (SiO2), silicon nitride (SiN), silicon (Si), lithium niobate (LN), lithium phosphate (LP), indium phosphide (InP), silicon oxynitride (SiON), gallium arsenide (GaAs), germanium (Ge), polymers, fluoride glasses, chalcogenide glasses, etc. The recessed region 112 can be formed by etching a certain area on the substrate 101 to form an etched region (i.e., the recessed region 112). It can be understood that since the recessed region 112 is formed by etching on the substrate 101, it is recessed relative to the convex region 111. The concave region 112 relative to the convex region 111 specifically means that, along the Z direction, the height of the convex region 111 is greater than the height of the concave region 112. The concave region 112 fixes the optical device 103, which, in this embodiment, is used for functions such as optical signal generation, transmission, modulation, and detection.Optionally, the optical device 103 is a laser. This example does not limit the type of laser. For example, the laser can be a direct modulation laser (DML), an electro-absorption modulated laser (EML), a vertical cavity surface emitting laser (VCSEL), a distributed bragg reflector (DBR), a fabric-pérot laser, a distributed feedback laser, a modulated grating y-branch (MG-Y) laser, a multi-channel interference (MCI) laser, a V-cavity laser, and a chirped sampled grating-distributed reflector laser (CSG-DR) laser, etc. For example, optical device 103 can be an optical modulator, such as a Mach-Zehnder modulator (MZM) or a micro-ring modulator (MRM). Alternatively, optical device 103 can be a detector, such as a photodiode (PIN diode) or an avalanche photodiode (APD). Optionally, optical device 103 can be an amplifier, such as a transimpedance amplifier (TIA). It should be noted that this embodiment does not limit the number of optical devices included in the optical chip 100.

[0043] Optical device 103 has an optical port 104. For example, if optical device 103 is a laser, the laser transmits optical signals to optical transmission medium 102 through optical port 104. Or, if optical device 103 is a detector or TIA, the optical port 104 is used to receive optical signals from optical transmission medium 102. To achieve successful transmission of optical signals between optical transmission medium 102 and optical port 104 of optical device 103, the optical port 104 of optical device 103 shown in this embodiment is aligned with optical transmission medium 102. Specifically, the alignment of optical port 104 of optical device 103 with optical transmission medium 102 means that the orthographic projection of the target end of optical transmission medium 102 on the YZ plane at least partially coincides with the orthographic projection of optical port 104 on the YZ plane. The target end of the optical transmission medium 102 is the end of the optical transmission medium 102 closest to the optical device 103. If the optical device 103 is a laser, the light signal emitted by the laser is incident on the optical transmission medium 102 via the target end. If the optical device 103 is a detector, the light signal exits from the target end and is transmitted to the optical device 103. Efficient and accurate transmission of the light signal is achieved between the optical port 104 of the optical device 103 and the optical transmission medium 102. The optical chip 100 shown in this embodiment can effectively improve the coupling efficiency between the optical port 104 of the optical device 103 and the optical transmission medium 102. For this purpose, the bottom of the concave region 112 protrudes outward to form N pillars 114, where N is any integer greater than or equal to 1. This embodiment does not limit the value of N or the arrangement of the N pillars 114. This embodiment does not limit the shape of the cross-section of the pillars 114 in the XY plane. For example, the cross-section can be circular, rectangular, symmetrical, triangular, trapezoidal, elliptical, or any other arbitrary shape. Along a direction perpendicular to the bottom of the recessed region 112 (i.e., direction Z), the N pillars 114 are located between the optical device 103 and the bottom of the recessed region 112. The optical chip 100 includes M first bonding layers formed by thermal bonding, where M is any integer greater than or equal to 1 and less than or equal to N. Each first bonding layer 113 is located on the target surface of one of the N pillars 114, and the target surface of the target pillar 114 faces the optical device 103 along direction Z. This embodiment takes the values ​​of M and N as equal and both as 4 as an example, without limitation. In other examples, M can also be any integer less than N and greater than or equal to 1.

[0044] The first bonding layer 113 shown in this embodiment is used to moltenly bond the optical device 103 to the target surfaces of N pillars 114. The first bonding layer 113 is formed between the target surfaces of the pillars 114 and the optical device 103 via thermal bonding. For example, this thermal bonding can be laser bonding, where a laser acts on the target surfaces of the pillars 114 and the optical device 103, causing the interfaces to melt and bond together. After cooling and solidification, a robust first bonding layer 113 is formed. Forming the first bonding layer 113 via laser bonding allows for rapid formation, improving the efficiency of optical chip generation, enhancing the strength and reliability of the first bonding layer 113. Due to the focusing characteristics of the laser, the heat-affected zone is small, reducing thermal damage to the optical chip and minimizing its impact on the microstructure morphology, thus helping to maintain the performance of the optical chip.

[0045] The function of the N pillars 114 is explained. The optical device 103 is fixed to the concave region 112 by the N pillars 114. Specifically, to improve the coupling efficiency between the optical port 104 of the optical device 103 and the optical transmission medium 102, it is necessary to ensure the alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102 on the YZ plane, and also to ensure the alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102 on the XY plane. In this embodiment, due to the function of the first bonding layer 113 and the N pillars 114, the position of the optical port 104 of the optical device 103 can be defined on the YZ plane, thereby ensuring the alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102 on the YZ plane. In this embodiment, due to the function of the first bonding layer 113 and the N pillars 114, the position of the optical port 104 of the optical device 103 can be defined on the XY plane, thereby ensuring the alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102 on the XY plane. The first bonding layer 113 and the N pillars 114 shown in this embodiment enable precise alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102 in the XY plane and the YZ plane. This effectively improves the coupling efficiency of optical signal transmission between the optical device 103 and the optical transmission medium. For example, the optical signal emitted from the optical transmission medium can be received by the optical device 103 as much as possible, and the optical signal emitted from the optical device 103 can be received by the optical transmission medium as much as possible, reducing optical power loss during the transmission of optical signals between the optical device 103 and the optical transmission medium. With the first bonding layer 113 improving the coupling efficiency between the optical device 103 and the optical transmission medium, it ensures that the waveform, frequency, and phase characteristics of the optical signal do not change significantly during transmission, thereby ensuring signal integrity.

[0046] Explain the formation method of the first bonding layer 113. Figure 3aThis is a packaging example diagram of one embodiment of the optical chip provided in this application.

[0047] First, the optical device 103 is adsorbed using the suction nozzle until it is positioned above the N pillars 114 in the concave region 112 along the Z direction. It can be understood that the optical device 103 and the N pillars 114 face each other along the Z direction.

[0048] Then, an ultrafast laser source is used to inject an ultrafast laser from below the N pillars 114. The ultrafast laser can heat the side of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103, so as to thermally melt the dielectric layer of the side of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103 to form the first bonding layer 113. Figure 3b for Figure 3aA structural example diagram of the first bonding layer is provided. A contact interface 323 exists between the side 321 of the optical device 103 facing the N pillars 114 and the dielectric layer 322 of the N pillars 114 facing the target surface of the optical device 103. The ultrafast laser source used to heat the side 321 of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103 can be any type, such as a picosecond laser, femtosecond laser, or attosecond laser, without specific limitations. An ultrafast laser refers to a pulsed laser with an output pulse width in the picosecond range or less. The laser spot formed by an ultrafast laser has a small diameter but high energy, and the high temperature (e.g., >4000 degrees Celsius) generated by the ultrafast laser is sufficient to cause thermal melting of the side 321 of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103 to form the first bonding layer 113. Specifically, under the high temperature of the ultrafast laser, the sides of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103 undergo a certain degree of melting. The molten material is fluid. As the ultrafast laser temperature increases, the atoms in the sides of the optical device 103 facing the N pillars 114 and the target surface of the N pillars 114 facing the optical device 103 become more active and diffuse. During atomic diffusion, chemical bonds are formed between adjacent atoms. These chemical bonds can be covalent bonds, ionic bonds, or metallic bonds, depending on the substrate of the optical chip 103 and its type and properties. With the formation and increase in the number of chemical bonds, a stable first bonding layer 113 gradually forms. This first bonding layer 113 firmly connects the optical device 103 and the N pillars 114 together, forming an integral structure. In this embodiment, the first bonding layer 113 can be formed under the action of an ultrafast laser when the sides of the optical device 103 facing the N pillars 114 and the target surfaces of the N pillars 114 facing the optical device 103 are in contact with each other. Alternatively, the first bonding layer 113 can be formed under the action of an ultrafast laser when there is a target distance between the sides of the optical device 103 facing the N pillars 114 and the target surfaces of the N pillars 114 facing the optical device 103 along the Z direction. For example, the target distance can be less than or equal to 20 micrometers (µm). The spot diameter of the ultrafast laser emitted from the ultrafast laser source can be adjusted as needed. Specifically, the ultrawide laser source can inject one ultrafast laser beam for each pillar 114, and the size of the ultrafast laser spot diameter can be adjusted according to the cross-sectional area of ​​the pillar 114 in the XY plane.For example, the axis of the super-laser coincides with or nearly coincides with the center of the first bonding layer 113. Moreover, the spot of the super-laser causes the temperature applied to the first bonding layer 113 to be highest at the center, and the temperature changes according to a certain mathematical law with the distance from the center of the first bonding layer 113. Specifically, the temperature value will form a symmetrical bell-shaped curve around the center, that is, high in the middle and low on both sides. That is, the temperature of the super-laser in the first bonding layer 113 is Gaussian distributed, which effectively promotes the formation of the first bonding layer 113, increases the bonding strength, and thus improves the fixing strength between the optical device 103 and the N pillars 114. The Gaussian temperature distribution can help reduce the generation of thermal stress and improve the stability of the first bonding layer 113 structure. This embodiment does not limit the size of the ultrafast laser spot diameter. For example, the pillar 114 has a first target orthographic projection on the surface of the substrate 101, and the ultrafast laser spot has a second target orthographic projection on the surface of the substrate 101. The second target orthographic projection is located within the coverage area of ​​the first target orthographic projection. For example, if the diameter of the pillar 114 along the XY plane is approximately 10 μm, the ultrafast laser spot diameter is less than 10 μm.

[0049] With the optical device 103 and the N pillars 114 fixed by the first bonding layer 113, the relative position between the optical device 103 and the optical chip 100 is fixed. Furthermore, the first bonding layer 113 and the N pillars 114, on the YZ plane and the XY plane, fix the optical port 104 of the optical device 103 in alignment with the optical transmission medium 102, effectively improving the coupling efficiency of optical signal transmission between the optical device 103 and the optical transmission medium, and reducing optical power loss during transmission between the optical device 103 and the optical transmission medium 102. This embodiment does not limit the structure of the first bonding layer 113, as long as it is formed between the optical chip 103 and the N pillars 114 and ensures alignment between the optical port 104 of the optical device 103 and the optical transmission medium 102. When a superluminal laser is incident on the first bonding layer 113, a teardrop-shaped or spindle-shaped morphology 310 is formed along the XZ plane in the first bonding layer 113. The length of this morphology 310 along the Z direction ranges from 10 to 300 μm, and the width along the X direction ranges from 1 to 30 μm. Figure 3bAs shown, the morphology 310 has a first end 311 and a second end 312. Along the Z-direction, the first end 311, the second end 312, and the substrate 101 are arranged sequentially. It can be understood that the ultrafast laser sequentially incident on the second end 312 and the first end 311. Along the XY plane, the cross-sectional area of ​​the second end 312 is larger than that of the first end 311. Optionally, a cavity may exist inside the morphology 310 formed by the first bonding layer 113. Optionally, the first bonding layer 113 includes a central region and an outer region. The outer region surrounds the outer periphery of the central region, which forms the morphology 310. The refractive index of the central region is different from that of the outer region; for example, the refractive index of the central region is greater than that of the outer region. It can be understood that under the action of the ultrafast laser, the contact interface 323 in the central region of the first bonding layer 113 will disappear. Furthermore, under the action of ultrafast laser, the central region of the first bonding layer 113 may experience greater material melting, forming a thicker diffusion layer along direction Z. Conversely, the outer region of the first bonding layer 113, due to its lower temperature (or lack of ultrafast laser heating), forms a thinner diffusion layer along direction Z. Therefore, it can be understood that the thickness of the central region of the first bonding layer 113 is greater than the thickness of its outer region along direction Z. During implementation, pressure can be applied to the optical device 103 in the direction of the substrate 101. Under this pressure, the surface of the first bonding layer 113 becomes planar after final cooling, thereby improving the structural stability between the first bonding layer 113 and the optical device 103.

[0050] Figure 3aIn the process shown, an electrical connection can also be achieved between the optical device 103 and the substrate of the optical chip 100. Specifically, the optical device 103 includes a first electrical interface 131, and the recessed region 112 includes a second electrical interface 132. Taking the first electrical interface 131 as an example, the first electrical interface 131 sequentially includes a first metal bump and a first pad, and the first metal bump and the first pad are connected by a first under-bump metallization (UBM). The first pad is located on the surface of the optical device 103. The second electrical interface 132 sequentially includes a second metal bump and a second pad, and the second metal bump and the second pad are connected by a second UBM. The first electrical interface 131 and the second electrical interface 132 shown in this embodiment need to have a specific relative position in order to achieve an electrical connection between the first electrical interface 131 and the second electrical interface 132. Specifically, along direction Z, the first electrical interface 131 and the second electrical interface 132 face each other. The first electrical interface 131 has a first orthographic projection on the bottom of the recessed region 112, and the second electrical interface 132 has a second orthographic projection on the bottom of the recessed region 112. Each of the pillars 114 has a third orthographic projection on the bottom of the recessed region 112. The first orthographic projection and the second orthographic projection at least partially overlap to ensure that the first electrical interface 131 and the second electrical interface 132 can be successfully electrically connected. The second orthographic projection and the third orthographic projection are isolated from each other to ensure that the position of the second electrical interface 132 on the recessed region 112 is different from the position of each pillar 114.

[0051] This section describes the electrical connection between the first electrical interface 131 and the second electrical interface 132. In the case of ultrafast laser injection into the pillar 114, the high temperature acting on the pillar 114 causes a second bonding layer 133 to form between the first electrical interface 131 and the second electrical interface 132. For an explanation of the formation of the second bonding layer 133, please refer to the explanation of the formation of the first bonding layer 113; details will not be repeated here. It can be understood that the formation of the second bonding layer 133 causes the first electrical interface 131 to melt and bond to the second electrical interface 132, thereby achieving the electrical connection between the first electrical interface 131 and the second electrical interface 132. In this embodiment, while the first electrical interface 131 and the second electrical interface 132 are electrically connected through the second bonding layer 133, the second bonding layer 133 also ensures the stability and reliability of the connection structure between the optical device 103 and the substrate 101, improving the strength of the physical connection between the optical device 103 and the substrate 101. Optionally, silver paste may be included between the first electrical interface 131 and the second electrical interface 132. Silver paste is a conductive adhesive mainly composed of conductive particles (such as silver powder), polymer materials, and solvents. Silver paste can improve the reliability of the electrical connection between the first electrical interface 131 and the second electrical interface 132, and it also has certain heat dissipation properties. The optical device 103 shown in this embodiment has a first surface and a second surface that are opposite to each other. The first surface of the optical device 103 is the surface facing the substrate 101. Taking the first electrical interface 131 located on the first surface of the optical device 103 as an example, in other optional examples, the second surface of the optical device 103 may include a third electrical interface, and the substrate of the optical chip may include a fourth electrical interface. For a description of the third and fourth electrical interfaces, please refer to the above description of the first and second electrical interfaces; further details will not be repeated here. The third and fourth electrical interfaces are electrically connected through wire bonding. Among them, wire bonding refers to the use of metal wires (such as gold wire, aluminum wire, copper wire, and silver wire) to achieve electrical connection between the third electrical interface and the fourth electrical interface under the action of energy such as heat, pressure, and ultrasound.

[0052] Figure 4 This is an example diagram of an existing optical chip package. Combined with... Figure 4 This section describes an existing solution as an example of packaging between the optical device 401 and the substrate 402 of the optical chip.

[0053] First, one or more pillars 403 are provided on the surface of substrate 402, and the pillars 403 are used to support optical device 401. When the nozzle fixes the optical device 401 to the surface of the pillar 403, the optical port of the optical device 401 can be aligned with the optical transmission medium of substrate 402. For an explanation of the alignment of the optical port of the optical device 401 with the optical transmission medium of substrate 402, please refer to the explanation of the alignment of the optical port of the optical device with the optical transmission medium of the substrate shown in the above embodiment, which will not be repeated here. Solder 404 is provided between the pillars 403, and the height of solder 404 is greater than the height of pillar 403 along the Z direction. The optical device 401 is moved to the position where the first electrical interface of the optical device 401 is aligned with the solder 404 using the nozzle.

[0054] Secondly, the laser emitted from the laser source heats the solder 404, causing it to melt and form a liquid state. Then, along direction Z, the height of the solder 404 decreases. Under the force applied by the nozzle, the optical device 401 moves downwards until it contacts the post 403. At the point where the optical device 401 contacts the post 403, the solder 404 establishes an electrical connection between the first electrical interface of the optical device 401 and the second electrical interface of the optical chip. Furthermore, because the post limits the position of the optical device 401, it couples the optical port of the optical device 401 with the optical transmission medium of the optical chip, ensuring successful transmission of optical signals between the optical port of the optical device 401 and the optical transmission medium of the optical chip. For a description of the first and second electrical interfaces, please refer to the above embodiment; further details will not be repeated here.

[0055] Figure 4 The existing optical device and chip packaging shown has a drawback: during the electrical connection process between the first electrical interface of the optical device 401 and the second electrical interface of the optical chip via solder, the solder 404 needs to be heated to a liquid state. This liquid state causes random displacement between the optical device 401 and the optical chip, altering their relative positions. This random displacement can lead to positional errors between the first and second electrical interfaces, reducing the success rate of the electrical connection and decreasing its stability and reliability. Furthermore, this random displacement reduces the coupling accuracy between the optical device 401 and the optical transmission medium, increasing the optical power loss during coupling. Since the solder 404 has a large area in the XY plane, in order to successfully achieve the electrical connection between the optical device 401 and the optical chip, the laser spot diameter acting on the solder 404 is also large. The large laser spot diameter will bring about thermal instability (such as thermal expansion) and have a large impact on the area, which will reduce the electrical connection accuracy and optical coupling accuracy between the optical device 401 and the optical chip.

[0056] And adopt Figure 3a In the embodiment of this application shown, the electrical connection between the optical device 103 and the optical chip does not require solder; only ultrafast laser light needs to be injected into the column. Since there is no liquid medium between the optical device 103 and the optical chip, random displacement between them is suppressed, ensuring a fixed relative position. This effectively improves the accuracy of the electrical connection, thereby enhancing its stability and reliability. Furthermore, by effectively suppressing random displacement, the coupling accuracy between the optical device 401 and the optical transmission medium is improved, reducing optical power loss during coupling. Because the ultrafast laser spot diameter injected into the column is small, heat is focused, and the diffusion area is small, effectively mitigating the impact of thermal instability caused by high temperatures on the coupling accuracy between the optical device and the optical chip.

[0057] Figure 5 This is a side view example of the optical chip structure according to a second embodiment of the optical chip provided in this application. The optical chip 500 shown in this embodiment includes a substrate 501, which specifically includes a convex region 504 and a concave region 510. The convex region 504 includes an optical transmission medium 502. For a description of the substrate 501, the convex region 504, the concave region 510, and the optical transmission medium 502, please refer to [link to relevant documentation]. Figures 1 to 3a The corresponding explanations will not be elaborated upon here. Relative to... Figures 1 to 3a The difference in the embodiments shown is that, Figure 5 In the illustrated embodiment, the recessed region 510 does not have a pillar; that is, the first surface of the optical device 511 is placed directly on the bottom of the recessed region 510. For a description of the optical device 511, please refer to [link to documentation]. Figures 1 to 3a The corresponding explanations are not detailed here. A laser is injected from the bottom of the recessed region 510. Under the action of the laser, a first bonding layer 520 is formed between the first surface of the optical device 511 and the bottom of the recessed region 510. This embodiment does not limit the type of laser. For an explanation of the first bonding layer 520, please refer to [link to documentation]. Figures 1 to 3a The specific details of the first bonding layer are omitted here. It can be understood that along direction Z, the first bonding layer 520 has a first contact surface and a second contact surface positioned opposite each other. The first contact surface contacts the optical device 511, and the second contact surface contacts the bottom of the recessed region 510. Based on the first bonding layer 520, the relative position between the optical device 511 and the substrate 501 is fixed, thereby improving the efficiency of optical signal coupling between the optical port of the optical device 511 and the optical transmission medium 502, and reducing the optical power loss of the transmitted optical signal between the optical port of the optical device 511 and the optical transmission medium 502.

[0058] To achieve electrical connection between optical device 511 and substrate 501, the second surface of optical device 511 has a third electrical interface. For a description of the second surface of optical device 511 and the third electrical interface, please refer to [link to documentation]. Figures 1 to 3a The details of the second surface of the corresponding optical device and the first electrical interface are not elaborated here. The substrate 501 includes a fourth electrical interface. For a description of the fourth electrical interface, please refer to the description of the third electrical interface. This embodiment does not limit the specific location of the fourth electrical interface; for example, the fourth electrical interface may be located in the recessed region 510, or it may be in the convex region 504, etc. The third electrical interface and the fourth electrical interface are electrically connected by wire bonding. For a description of wire bonding, please refer to [link to documentation]. Figure 3a The corresponding explanations will not be elaborated upon here.

[0059] Using the optical chip shown in this embodiment, the first bonding layer is formed when the first surface of the optical chip 511 directly contacts the bottom of the recessed region 510, effectively avoiding potential contact problems such as voids and misalignments between the optical chip 511 and the bottom of the recessed region 510, thus improving the structural reliability between the optical device 511 and the substrate 501. The optical device 511 and the substrate 501 are electrically connected via wire bonding, which helps the optical chip support higher transmission rates. Furthermore, since the first bonding layer is formed when the first surface of the optical chip 511 directly contacts the bottom of the recessed region 510, there is no need to etch the recessed region again to form a pillar structure, saving etching processes and improving the fabrication efficiency of the optical chip.

[0060] Figure 6 This is a structural example diagram of one embodiment of the photoelectric conversion module provided in this application. The photoelectric conversion module provided in this embodiment can also be called an optical transceiver module or an optical module, etc. For example, the photoelectric conversion module shown in this embodiment is used to receive a first optical signal. Therefore, the optical device packaged in the optical chip 601 is an optical receiving module. For example, this optical receiving module can be a detector or a TIA, etc. The substrate of the optical chip also encapsulates a processor and an optical fiber adapter 602. The processor and the optical receiving module are electrically connected through the substrate. For a description of the optical device packaged in the optical chip, please refer to [link to relevant documentation]. Figure 1 , Figure 2 , Figure 3a as well as Figure 5 The illustrated embodiment is not described in detail here. The fiber optic adapter 602 connects the optical transmission medium fixed to the protruding area of ​​the optical chip and the transmission optical fiber 603 to achieve optical signal transmission between the optical transmission medium and the transmission optical fiber 603. For a description of the optical transmission medium fixed to the protruding area, please refer to [link to documentation]. Figure 1 , Figure 2 , Figure 3a as well as Figure 5The embodiments shown are illustrated, and specific details will not be elaborated further. This embodiment does not limit the processor type; for example, the processor can be one or more chips, or one or more integrated circuits. Furthermore, the processor can be one or more optical digital signal processors (oDSPs), field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), system-on-chips (SoCs), central processing units (CPUs), network processors (NPs), microcontroller units (MCUs), programmable logic devices (PLDs), network interface card chips, storage interface chips, or other integrated chips, or any combination of the above chips or processing modules, etc., and specific details will not be elaborated further. The fiber optic adapter 602 can be a ferrule connector (FC), a subscriber connector (SC), a lucent connector (LC), a straight tip (ST), a fiber optic distributed data interface (FDDI), or a multi-fiber push-on connector (MPO). The fiber optic adapter can also be connected to the transmission fiber 603 via a movable connector, a modular fiber optic access structure, or other methods; the specific connection is not limited. Optionally, an edge coupler may be included between the fiber optic adapter 602 and the optical transmission medium. The edge coupler is used to achieve mode matching between the optical signal transmitted by the transmission fiber 603 and the optical signal transmitted by the optical transmission medium of the optical chip 601, thereby improving the coupling efficiency of the optical signal between the transmission fiber 603 and the optical transmission medium. Specifically, the transmission optical fiber 603 transmits a first optical signal to the optical transmission medium of the optical chip 601 via the optical fiber adapter 602. The optical transmission medium sends the first optical signal to the optical device through the optical port of the optical device. Since the optical device is an optical receiving module (e.g., including a detector or TIA), the optical receiving module performs photoelectric conversion on the first optical signal to obtain a first electrical signal. The optical receiving module then sends the first electrical signal to the processor packaged in the optical chip 601.

[0061] For example, in this embodiment, the photoelectric conversion module is used to emit a second optical signal. Therefore, the optical device encapsulated in the optical chip 601 is an optical emitting module, such as a laser or an optical modulator. Specifically, the optical emitting module receives a second electrical signal from the processor, performs electro-optical conversion on the second electrical signal to obtain a second optical signal, and transmits the second optical signal to the optical transmission medium of the optical chip 601 through its optical port. The optical transmission medium then transmits the second optical signal to the transmission optical fiber 603 via the optical fiber adapter 602, thereby achieving the purpose of the optical chip 601 emitting a second optical signal.

[0062] This application also provides a co-packaged-optics (CPO) chip. Figure 7 This is an example structural diagram of the optoelectronic co-packaged chip provided in this application. The CPO chip includes a switching substrate 700, a logic processing chip 702, and multiple optoelectronic conversion modules. This embodiment does not limit the number of optoelectronic conversion modules included in the CPO chip. The logic processing chip 702 and each optoelectronic conversion module are packaged on the same switching substrate 700 to achieve optoelectronic co-packaging between the logic processing chip 702 and each optoelectronic conversion module. This shortens the distance between the logic processing chip 702 and each optoelectronic conversion module, reduces the power consumption of electrical signal transmission between the logic processing chip 702 and each optoelectronic conversion module, and thus reduces the bit error ratio (BER) of the optical communication device. For a description of the structure of each optoelectronic conversion module, please refer to [link to relevant documentation]. Figure 6 As shown, no specific limitations are imposed. For a description of the logic processing chip 702 type, please refer to the above description of processor types; details will not be repeated here. The switching substrate 700 shown in this embodiment may include one or more layers of substrate material, with conductive traces arranged on one or both sides of each substrate. This embodiment does not limit the type of substrate material; for example, the substrate may be paper-based, glass fiber cloth-based, composite-based, ceramic-based, metal-core-based, etc. Based on the conductive traces of the switching substrate 700, electrical connections between any two devices packaged on the switching substrate 700 are achieved.

[0063] This application also provides an optical communication device, including a housing, a circuit board, and a photoelectric conversion module. For a description of the photoelectric conversion module, please refer to... Figure 6 The corresponding explanations are not detailed here. The interior of the outer casing is used to fix the circuit board, and the photoelectric conversion module is encapsulated on the surface of the circuit board.

[0064] Figure 8This is a structural example diagram of one embodiment of the radar provided in this application. For example, the radar shown in this embodiment is a lidar, a target detection technology. Lidar emits a detection light signal for detection. When the detection light signal encounters a target object, it undergoes diffuse reflection. The lidar determines the target object's distance, azimuth, altitude, speed, attitude, shape, and other characteristics based on the reflected light signal. Lidar is applied in fields such as intelligent driving vehicles, intelligent aircraft, 3D printing, virtual reality (VR), augmented reality (AR), and service robots. The intelligent driving in this embodiment can be autonomous driving, autonomous driving, or assisted driving.

[0065] The lidar 800 shown in this embodiment includes a controller 801, a first optical chip 810, and a second optical chip 820. The first optical chip includes a substrate on which a first optical transmission medium is fixed. The first optical chip 810 also includes a laser, which is connected to the controller 801. For a description of the type of controller 801, please refer to the description of processor types above; specific details will not be repeated here. The controller 801 is used to send a first detection electrical signal to the laser. The laser is used to convert the first detection electrical signal into a first detection optical signal and send the first detection optical signal to the first optical transmission medium. The first optical transmission medium of the first optical chip 810 emits the first detection optical signal towards the target object. The first detection optical signal is used to detect relevant information about the target object. For a description of the structure of the first optical chip 810, please refer to the above embodiment; specific details will not be repeated here.

[0066] When the first detection light signal encounters the target object, it is reflected on the surface of the target object, reflecting back to the lidar as a second detection light signal. The second optical chip 820 includes a substrate, on which a second light transmission medium is fixed. The second optical chip 820 also includes a detector connected to the second light transmission medium. The detector is also connected to the controller 801. For a description of the structure of the second optical chip 820, please refer to the above embodiment; specific details will not be repeated here. The second light transmission medium receives the second detection light signal reflected by the target object and transmits the second detection light signal to the detector through the second light transmission medium. The detector receives the second detection light signal and converts it into a second detection electrical signal. The detector sends the second detection electrical signal to the controller 801, and the controller 801 obtains relevant information about the target object based on the second detection electrical signal. Specifically, the controller 801 can determine the location information of the target object by calculating the time delay between the emission time of the first detection light signal and the return time of the second detection light signal. This embodiment uses different optical chips to implement the first and second optical chips as an example. In other examples, the first and second optical chips can be implemented using the same optical chip; specific details will not be repeated here.

[0067] The above embodiment illustrates the application of optical chips to lidar in transportation vehicles. In other examples, optical chips can also be applied to fixed radar (e.g., radar fixed on highways, surveillance radar, radar in industrial settings, etc.). Optical chips can also be applied to radar in unmanned transport vehicles in logistics warehouses or radar in smart home appliances (e.g., automatic cleaning robots), etc., without specific limitations.

[0068] This embodiment also provides a means of transportation; for a detailed description of its structure, please refer to [link / reference needed]. Figure 9 As shown, where, Figure 9 This is a structural example diagram of one embodiment of the vehicle provided in this application. The vehicle shown in this example may be a car, truck, motorcycle, public vehicle, lawnmower, recreational vehicle, amusement park vehicle, tram, golf cart, train, handcart, or drone, etc. This embodiment configures the vehicle 900 in a fully or partially automated driving mode. The vehicle shown in this embodiment includes a vehicle body, which is used to fix a sensor system 920, an advanced driving assistance system (ADAS) 910, peripheral equipment 930, and a computer system 940.

[0069] Sensing system 920 includes one or more sensors that sense environmental information about the vicinity of vehicle 900. For example, sensing system 920 may include a positioning system, such as a Global Positioning System (GPS) or BeiDou Navigation Satellite System. Sensing system 920 also includes an inertial measurement unit (IMU), a lidar sensor, and a camera. For a description of lidar, please refer to [link to lidar documentation]. Figure 8 The specific embodiments are not limited. The sensing system 920 may also include sensors for monitoring internal systems of the vehicle 900 (e.g., in-vehicle air quality monitor, fuel gauge, oil temperature gauge, etc.). Sensor data from one or more of these sensors can be used to detect objects and their corresponding characteristics (position, shape, orientation, speed, etc.). A positioning system can be used to estimate the geographical location of the vehicle 900. An IMU is used to sense changes in the position and orientation of the vehicle 900 based on inertial acceleration. The IMU may be a combination of an accelerometer and a gyroscope. A lidar can use radio signals to detect target objects in the surrounding environment of the vehicle 900, such as pedestrians, vehicles, or buildings.

[0070] ADAS910 continuously senses the surrounding environment during vehicle operation, collecting data to identify, detect, and track static and dynamic objects. It then combines this data with navigation map data for system calculations and analysis, allowing the driver to anticipate potential hazards and effectively increasing driving comfort and safety. For example, ADAS910 can control the vehicle using data acquired by sensor system 920. Furthermore, ADAS910 can control the vehicle using vehicle driving-related information, such as key data displayed on the instrument panel (fuel consumption, engine speed, temperature, etc.), vehicle speed, steering wheel angle, or vehicle attitude data.

[0071] Vehicle 900 interacts with external sensors, other vehicles, other computer systems, or users via peripheral device 930. Peripheral device 930 may include a wireless communication system, an onboard computer, a microphone, and / or a speaker. For example, the onboard computer may provide information to the user of vehicle 900. The user interface may also operate the onboard computer to receive user input. The onboard computer may be operated via a touchscreen. In other cases, peripheral device 930 may provide a means for vehicle 900 to communicate with other devices located within the vehicle. For example, a microphone may receive audio (e.g., voice commands or other audio input) from the user of vehicle 900. A speaker may output audio to the user of vehicle 900. The wireless communication system may communicate wirelessly with one or more devices directly or via a communication network.

[0072] Some or all of the functions of the vehicle 900 are controlled by a computer system 940. The computer system 940 can control the functions of the vehicle 900 based on input received from various systems (e.g., sensor system 920, ADAS 910, peripheral devices 930) and from a user interface. The computer system 940 may include at least one processor that executes instructions stored in memory.

[0073] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0074] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An optical chip, characterized by, The device includes a substrate and an optical device. The substrate includes a convex region and a concave region. The concave region is concave relative to the surface of the convex region. The convex region fixes an optical transmission medium. Along a direction perpendicular to the bottom of the concave region, the optical device and the concave region have a first bonding layer formed by thermal bonding. The first bonding layer is used to moltenly bond the optical device to the concave region. The optical device has an optical port, which is aligned with the optical transmission medium. The optical device is used to transmit optical signals between the optical port and the optical transmission medium.

2. The optical chip of claim 1, wherein, The concave region groove bottom protrudes outward to form N pillars, where N is any integer greater than or equal to 1. Along a direction perpendicular to the groove bottom of the concave region, the N pillars are located between the optical device and the groove bottom of the concave region. The first bonding layer is formed between the N pillars and the optical device. The N pillars are used to align the optical port of the optical device with the optical transmission medium.

3. The optical chip of claim 2, wherein, The optical chip includes M first bonding layers, where M is any integer greater than or equal to 1 and less than or equal to N. Each first bonding layer is located on the target surface of one of the N pillars, and the target surface of the pillar and the optical device face each other. The first bonding layer is used to moltenly bond the optical device to the target surface of the pillar.

4. The optical chip according to claim 2 or 3, characterized in that, The optical device includes a first electrical interface, and the recessed region includes a second electrical interface. Along a direction perpendicular to the bottom of the recessed region, the first electrical interface and the second electrical interface face each other and are electrically connected. The first electrical interface has a first orthographic projection on the bottom of the concave region groove, the second electrical interface has a second orthographic projection on the bottom of the concave region groove, and each of the columns has a third orthographic projection on the bottom of the concave region groove, wherein the first orthographic projection and the second orthographic projection at least partially overlap, and the second orthographic projection and the third orthographic projection are isolated from each other.

5. The optical chip of claim 4, wherein, A second bonding layer is formed by thermal bonding between the first electrical interface and the second electrical interface. The second bonding layer is used to melt and bond the first electrical interface to the second electrical interface, and the first electrical interface is electrically connected to the second electrical interface through the second bonding layer.

6. The optical chip of claim 1, wherein, Along a direction perpendicular to the bottom of the recessed region, the first bonding layer has a first contact surface and a second contact surface that are opposite to each other. The first contact surface contacts the optical device, and the second contact surface contacts the bottom of the recessed region.

7. The optical chip according to any one of claims 1 to 6, wherein Along a direction perpendicular to the bottom of the recessed region, the optical device has a first surface and a second surface that are opposite to each other. The first surface and the recessed region face each other. The second surface includes a third electrical interface. The substrate includes a fourth electrical interface. The third electrical interface is electrically connected to the fourth electrical interface via wire bonding.

8. The optical chip according to any one of claims 1 to 7, wherein, The first bonding layer is formed in the shape of a teardrop or spindle. Along the direction perpendicular to the surface of the substrate, the shape has a first end and a second end, and the first end, the second end and the substrate are arranged in sequence. Along the direction parallel to the surface of the substrate, the cross-sectional area of ​​the second end is larger than the cross-sectional area of ​​the first end.

9. The optical chip of claim 8, wherein, Along a direction parallel to the substrate surface, the first bonding layer includes a central region and an outer region, the outer region surrounding the outer periphery of the central region, the central region forming the morphology, and the refractive index of the central region being greater than that of the outer region.

10. A photoelectric conversion module characterized by comprising: Includes an optical chip as described in any one of claims 1 to 9, the optical chip packaged with a processor and an optical fiber adapter, the optical fiber adapter being used to connect the optical transmission medium to the transmission optical fiber; The optical transmission medium is used to receive a first optical signal from the transmission optical fiber via the optical fiber adapter and transmit the first optical signal to the optical device. The optical device is used to perform photoelectric conversion on the first optical signal to obtain a first electrical signal and send the first electrical signal to the processor. or, The optical device is used to receive a second electrical signal from the processor, perform electro-optical conversion on the second electrical signal to obtain a second optical signal, and transmit the second optical signal to the optical transmission medium. The optical transmission medium is used to transmit the second optical signal to the transmission optical fiber via the optical fiber adapter.

11. An optoelectronic hybrid chip, characterized by It includes a switching substrate, a logic processing chip, and a photoelectric conversion module as described in claim 10, wherein the logic processing chip and the photoelectric conversion module are both soldered onto the switching substrate.

12. An optical communication device, comprising: It includes a housing, a circuit board, and a photoelectric conversion module as described in claim 10, wherein the interior of the housing is used to fix the circuit board, and the photoelectric conversion module is encapsulated on the surface of the circuit board.

13. A radar, characterized by Includes a controller and an optical chip connected to the controller, the optical chip being as described in any one of claims 1 to 9; The optical device includes a laser, the controller is used to send a first detection electrical signal to the laser, the laser is used to convert the first detection electrical signal into a first detection optical signal and transmit the first detection optical signal to the optical transmission medium, and the first detection optical signal is used to detect relevant information of the target object; or, The optical device includes a detector, the optical transmission medium is used to transmit a second detection optical signal reflected by the target object to the detector, the detector is used to convert the second detection optical signal into a second detection electrical signal, and the controller is used to obtain relevant information about the target object based on the second detection electrical signal.

14. A vehicle, characterized by It includes a vehicle body and a radar fixed to the vehicle body, the radar as described in claim 13.

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