A dynamically tunable nanoimprint template based on the piezoelectric effect, its manufacturing method and applications

Abstract

This invention belongs to the field of nanoimprint lithography technology. It provides a dynamically adjustable nanoimprint template based on the piezoelectric effect, its manufacturing method, and its applications. The nanoimprint template integrates a piezoelectrically active driving structure on the back side of a flexible substrate and a nanostructure layer on the front side. The piezoelectrically active driving structure includes a first electrode layer, a piezoelectric material layer, and a second electrode layer stacked together, with the first electrode layer close to the flexible substrate. By applying a voltage to the piezoelectric material layer in the piezoelectrically active driving structure, the geometric parameters such as the characteristic size and period of the surface nanostructure can be changed through interlayer transmission of the piezoelectric effect. This template can withstand typical nanoimprint pressure, and the adjustable range of its geometric parameters is 0.1%~5%, with nanometer-level precision. It also has a microsecond-level fast response, making it highly suitable as a nanoimprint template for ultraviolet imprinting, which significantly reduces template remanufacturing costs and improves R&D iteration efficiency.

Description

Technical Field

[0001] This invention belongs to the field of nanoimprint lithography technology, and relates to a nanoimprint template, particularly a dynamically adjustable nanoimprint template based on the piezoelectric effect, its manufacturing method and application. Background Technology

[0002] Nanoimprint lithography (NIL) has become an important method for fabricating micro and nanostructures due to its advantages of high resolution, high throughput, and low cost. Traditional nanoimprint templates are usually prepared using electron beam lithography combined with etching processes. Once formed, their key structural parameters (such as period, linewidth, and duty cycle) are permanently fixed. If the pattern needs to be fine-tuned due to design changes, process optimization, or product specification adjustments, the entire template must be remade, resulting in high R&D costs, with a single template costing tens to hundreds of thousands of yuan. Moreover, the development cycle is lengthy, often taking weeks or even months from design to delivery, which severely restricts the needs of rapid iterative development and multi-variety, small-batch production.

[0003] To address these limitations, existing technologies attempt to develop tunable template solutions. For example, mechanically driven tunable gratings based on microelectromechanical systems (MEMS) rely on suspended thin films or beam structures, making them unsuitable for withstanding typical imprinting pressures (usually greater than 1 MPa) in practical nanoimprint applications, leading to deformation or breakage and insufficient reliability. Another approach uses Invar alloy-polymer composite structures, utilizing differences in thermal expansion coefficients to achieve dimensional adjustment with temperature changes. However, their response speed is slow (on the order of seconds), and frequent thermal cycling accelerates material fatigue and interface degradation, significantly shortening the template's lifespan. Furthermore, these dynamic adjustment mechanisms are mostly limited to single-parameter control, making it difficult to achieve multi-degree-of-freedom, high-precision real-time pattern reconstruction.

[0004] Therefore, existing adjustable template technology has significant shortcomings in terms of mechanical strength, response speed, durability, and controllability, and cannot yet meet the actual needs of high-precision, high-efficiency, and high-stability nanoimprint manufacturing. There is an urgent need to develop a new type of adjustable template technology. Summary of the Invention

[0005] In view of the problems existing in the prior art, the purpose of this invention is to provide a dynamically adjustable nanoimprint template based on the piezoelectric effect, its manufacturing method, and its applications. This nanoimprint template integrates a piezoelectrically active driving structure on the back side of a flexible substrate and a nanostructure layer on the front side. By applying a voltage to the piezoelectric material layer in the piezoelectrically active driving structure, the geometric parameters such as the characteristic size and period of the surface nanostructure can be changed through interlayer transmission of the piezoelectric effect. This template can withstand typical nanoimprint pressure, and the adjustable range of its geometric parameters is 0.1%~5%, with nanometer-level precision. It also exhibits microsecond-level fast response, making it highly suitable as a nanoimprint template for ultraviolet imprinting, which significantly reduces template remanufacturing costs and improves R&D iteration efficiency.

[0006] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides a dynamically tunable nanoimprint template based on the piezoelectric effect, comprising: A flexible substrate layer with opposing front and back sides; A nanostructure layer is disposed on the front side of the flexible substrate layer; A piezoelectric active driving structure is disposed on the back side of the flexible substrate layer, comprising a first electrode layer, a piezoelectric material layer, and a second electrode layer stacked together, wherein the first electrode layer is close to the flexible substrate layer; the piezoelectric active driving structure is configured to drive changes in the geometric parameters of the nanostructures in the nanostructure layer by applying a voltage.

[0007] This invention integrates a piezoelectric active driving structure on the back side of a flexible substrate, combining rigid piezoelectric materials with flexible imprinting technology. It also endows the flexible substrate with effective active control over the nanostructure layer. Specifically, a voltage is applied to the piezoelectric material layer through the first and second electrode layers, generating strain through its piezoelectric effect. This strain is transmitted to the flexible substrate through interlayer shear force, thereby altering the geometric parameters of the nanostructure layer on the front side while maintaining structural integrity. Furthermore, based on the continuous, rapid, and high-resolution voltage response of the piezoelectric effect, rapid, flexible, and stable dynamic adjustment of the nanostructure and its geometric parameters can be achieved. This is beneficial for real-time adjustment or maintenance of target geometric parameters before or during imprinting. It also allows for a wide range of adjustment of the nanostructure's geometric parameters; for example, the rate of change for feature dimensions and periods can reach 0.1% to 5%. High-precision adjustment is also possible; for example, the adjustment accuracy of period values ​​and feature dimensions such as linewidth can reach the nanometer level (<1 nm). Simultaneously, this nanoimprint template exhibits excellent imprinting compatibility and can withstand typical nanoimprinting pressures (0.1 MPa to 10 MPa). The piezoelectric effect-based dynamically adjustable nanoimprint template provided by this invention has high precision, fast response, and wide adjustment range, and is especially suitable for implementing ultraviolet imprinting (UV-NIL) processes.

[0008] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The technical objectives and beneficial effects of the present invention can be better achieved and realized through the following technical solutions.

[0009] As a preferred embodiment of the present invention, the spontaneous polarization direction of the piezoelectric material layer is parallel to the thickness direction. Therefore, the piezoelectric material layer and the piezoelectrically active driving structure can be further configured to utilize d 31 The effect (transverse piezoelectric effect) drives a change in the geometric parameters of the nanostructures in the nanostructure layer. Specifically, the electric field applied by the first and second electrode layers is parallel to the spontaneous polarization direction of the piezoelectric material layer; this electric field strength is denoted as E3. Under the action of E3, the piezoelectric material layer generates in-plane strain. : Where, d 31 The piezoelectric coefficient represents the stretching strain in the 1-axis direction (length or width direction of the piezoelectric material layer) when an electric field is applied in the 3-axis direction (spontaneous polarization direction); for example, for lead zirconate titanate (PZT-5H) material, its d 31 Approximately -100 pC / N; V represents voltage, and t represents the thickness of the piezoelectric material layer.

[0010] This strain can be transferred to the flexible substrate through interlaminar shear, thereby causing effects such as in-plane tension or composite beam bending. For a double-ended fixed membrane structure, the relationship between the displacement δ at the center point and the strain is as follows: Where L can represent the characteristic length, i.e., the geometric parameter of the nanostructure, and t total This represents the total thickness of the piezoelectric material layer.

[0011] Therefore, for the same nanostructure and its geometric parameters, the adjustment effect can be influenced by changing the voltage and the thickness of the piezoelectric material layer. This means that the piezoelectric active driving structure can continuously adjust the geometric parameters by controlling the voltage amplitude. With reasonable material selection, thickness, and layer structure design, it is beneficial to achieve a wide range of adjustment of the geometric parameters within the range of 0.1% to 5%. The piezoelectric intrinsic response time is <1ms, and the deformation displacement resolution is <0.1nm (limited by voltage source noise), which is beneficial to obtaining rapid and high-precision adjustment effects. At the same time, the direction of the electric field formed by the applied voltage can be parallel to or opposite to the spontaneous polarization direction, thereby realizing bidirectional driving adjustment. For example, the voltage can be -50V to 50V.

[0012] The rate of change of the geometric parameters described in this invention is adjustable from 0.1% to 5%, for example, it can be 0.1%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, or 4.5%, etc.; the voltage that can be applied according to this invention is -50V to 50V, for example, it can be -50V, -40V, -20V, -10V, -5V, 5V, 10V, 20V, 30V, 40V, or 50V, etc.

[0013] It should also be noted that the present invention preferably utilizes d 31 The effect can be adjusted, and other directions of piezoelectric effect, such as d, can also be utilized according to actual needs and design. 33 The effect is adjusted. At this time, the piezoelectric active driving structure is still set on the back side of the flexible substrate. The spontaneous polarization direction of the piezoelectric material layer is parallel to the length or width direction. The electrode layer is set on two opposite surfaces of the piezoelectric material layer in the length or width direction. Considering the controllability of the electric field and voltage, the size (width or length) of the piezoelectric material layer between the two electrode layers should be small, which will lead to a reduction in the overall size of the nanoimprint template.

[0014] As a preferred embodiment of the present invention, the piezoelectric material layer includes at least one of lead zirconate titanate (PZT), aluminum nitride (AlN), or zinc oxide (ZnO).

[0015] As a preferred technical solution of the present invention, the thickness of the piezoelectric material layer is 0.5μm~5μm, for example, it can be 0.5μm, 0.8μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm or 5μm, etc.

[0016] As a preferred embodiment of the present invention, the flexible substrate layer comprises at least one of polydimethylsiloxane (PDMS), polyimide (PI), or polyethylene terephthalate (PET). In this invention, the flexible substrate layer is made of a transparent material, which allows the resulting nanoimprint template to be more suitable for ultraviolet imprinting.

[0017] As a preferred embodiment of the present invention, the thickness of the flexible substrate layer is 50μm to 500μm, for example, it can be 50μm, 80μm, 100μm, 150μm, 200μm, 250μm, 300μm, 350μm, 400μm, 450μm or 500μm, etc., preferably 100μm to 300μm; the Young's modulus is 0.1MPa to 10MPa, for example, it can be 0.1MPa, 0.5MPa, 0.8MPa, 1MPa, 3MPa, 5MPa, 8MPa or 10MPa. In this invention, the flexible substrate layer needs to support the nanostructure layer and withstand the strain transmission of the piezoelectric active driving structure. On the other hand, it needs to withstand the imprinting pressure and achieve conformal contact in subsequent imprinting applications. Therefore, it needs to have suitable mechanical properties. Furthermore, the thickness ratio of the flexible substrate layer to the piezoelectric material layer is (100~200):1, which is beneficial to achieve Young's modulus matching through the thickness ratio, thereby achieving better strain coordination. This thickness ratio can be 100:1, 120:1, 140:1, 160:1, 180:1 or 200:1, etc.

[0018] As a preferred technical solution of the present invention, the nanostructures in the nanostructure layer form non-periodic or periodic micro-nano patterns.

[0019] Preferably, the micro / nano pattern includes gratings and / or an array of holes.

[0020] Preferably, the feature size of the micro / nano pattern is 10 nm to 10 μm, for example, it can be 10 nm, 50 nm, 100 nm, 500 nm, 800 nm, 1 μm, 3 μm, 5 μm, 8 μm, or 10 μm. The feature size mentioned in this invention is the physical size of the nanostructure, and may optionally include linewidth, slot width, diameter, side length, height, or depth.

[0021] Preferably, the geometric parameters include at least one of the characteristic size, period value, or curvature of the micro / nano pattern.

[0022] As a preferred embodiment of the present invention, the nanostructure layer includes a UV-curable adhesive.

[0023] As a preferred technical solution of the present invention, the thickness of the nanostructure layer is 100nm~2μm, for example, it can be 100nm, 300nm, 500nm, 800nm, 1μm, 1.3μm, 1.5μm, 1.8μm or 2μm, etc.

[0024] In this invention, the Young's modulus of the nanostructure layer is preferably >1 GPa to ensure the fidelity of the nanostructure.

[0025] As a preferred embodiment of the present invention, both the first electrode layer and the second electrode layer include transparent electrodes; the transparent electrodes include at least one of transparent conductive oxide, transparent conductive organic material, patterned metal layer, metal nanowires, or carbon-based materials; the transparent conductive oxide includes indium tin oxide (ITO); the transparent conductive organic material includes poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS); the patterned metal layer includes a gold / chromium (Au / Cr) bimetallic layer; the metal nanowires include silver nanowires; and the carbon-based materials include graphene and / or carbon nanotubes.

[0026] As a preferred technical solution of the present invention, the thickness of the first electrode layer and the second electrode layer is 50nm~300nm, for example, it can be 50nm, 80nm, 100nm, 130nm, 150nm, 180nm, 200nm, 230nm, 250nm, 280nm or 300nm, etc.

[0027] In this invention, the first electrode layer is in contact with the flexible substrate layer, preferably Au / Cr or silver nanowires, to achieve better ohmic contact; and the first electrode layer is preferably patterned, for example, designed as interdigitated electrodes, which can effectively enhance the uniformity of the in-plane electric field and enable light transmission, thus supporting UV exposure of the nanostructure layer or subsequent application in ultraviolet imprinting; the second electrode layer is preferably a transparent conductive oxide or transparent conductive organic material with a transmittance > 85%.

[0028] In a second aspect, the present invention provides a method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect as described in the first aspect, comprising the following steps: Prepare or provide a piezoelectric material layer; A first electrode layer is formed on one of the two opposing surfaces of the piezoelectric material layer; A flexible substrate layer is formed on the side of the first electrode layer away from the piezoelectric material layer; A nanostructured raw material layer is formed on the side of the flexible substrate away from the first electrode layer, and the nanostructured raw material layer is imprinted or transferred to form a nanostructured layer. A second electrode layer is formed on the surface of the piezoelectric material layer opposite to the first electrode layer.

[0029] As a preferred technical solution of the present invention, the method for preparing the piezoelectric material layer includes sol-gel method or magnetron sputtering.

[0030] As a preferred embodiment of the present invention, the sol-gel method includes: providing a temporary substrate; depositing a metal seed layer on the temporary substrate; coating a piezoelectric material precursor solution on the metal seed layer; annealing to form a piezoelectric material layer; and peeling off the temporary substrate.

[0031] The present invention preferably uses a sol-gel method to form a piezoelectric material layer using a piezoelectric material precursor solution. The side of this piezoelectric material layer away from the temporary substrate can be used to form a flexible substrate layer, and the side close to the temporary substrate can be peeled off, thereby realizing the transfer of the piezoelectric material layer to the flexible substrate layer.

[0032] Preferably, the temporary substrate comprises a silicon substrate.

[0033] Preferably, the metal seed layer comprises a stacked titanium layer and a platinum layer; the thickness of the titanium layer can be 5nm~35nm, such as 5nm, 10nm, 15nm, 20nm, 25nm, 30nm or 35nm; the thickness of the platinum layer can be 30nm~70nm, such as 30nm, 40nm, 50nm, 55nm, 60nm, 65nm or 70nm.

[0034] Preferably, the piezoelectric material precursor solution includes a lead zirconate titanate precursor solution.

[0035] Preferably, the annealing temperature is 600℃~700℃, for example, it can be 600℃, 620℃, 640℃, 660℃, 680℃ or 700℃.

[0036] Preferably, the method for stripping the temporary substrate includes at least one of laser stripping, wet etching, or mechanical stripping.

[0037] As a preferred embodiment of the present invention, the transfer method includes: providing a silicon template with a nanostructure; preparing a soft stamp using a silicon template; imprinting the nanostructured raw material layer with the soft stamp and then curing it; and peeling off the soft stamp to form the nanostructured layer. The transfer method implemented in this invention involves transferring a hard stamp (silicon template) to a soft stamp, and then using the soft stamp to imprint the relatively hard nanostructured raw material layer. This combination and matching of hard and soft materials helps reduce imprinting defects and the impact of demolding (peeling off the soft stamp), making it more suitable for large-area imprinting and effectively improving imprinting quality.

[0038] Preferably, the material of the soft stamp includes polydimethylsiloxane.

[0039] Preferably, the imprinting pressure is 0.1MPa to 1MPa, for example, it can be 0.1MPa, 0.3MPa, 0.5MPa, 0.8MPa or 1MPa.

[0040] Preferably, the curing method includes UV exposure.

[0041] Thirdly, the present invention provides a method for nanoimprinting, the method comprising: Using the dynamically adjustable nanoimprint template based on the piezoelectric effect described in the first aspect, a voltage is applied to the piezoelectric material layer before or during imprinting to make the nanostructure achieve the target geometric parameters, thereby performing imprinting.

[0042] Furthermore, imprinting using a nanoimprint template can be performed on a substrate coated with photoresist, such that one side of the nanostructure layer of the nanoimprint template comes into contact with the photoresist and pressure (0.1 MPa to 10 MPa) is applied. The voltage remains constant during the imprinting process to ensure that the geometric parameters of the nanostructure are stable during the imprinting. Then, the photoresist can be cured and shaped by UV exposure or thermal curing. After separating the nanoimprint template from the substrate, a nanostructure with the target geometric parameters can be obtained on the substrate.

[0043] The dynamically tunable nanoimprint template based on the piezoelectric effect and the nanoimprint method using it provided by the present invention can be further applied to the fabrication of semiconductor devices, optical metasurfaces, micro-nano optical components and flexible electronics.

[0044] It should be noted that, due to space limitations and to avoid redundancy, this invention does not exhaustively list all point values ​​within the above numerical range, but it is not limited to the listed values ​​either; other unlisted values ​​within the above numerical range are also applicable.

[0045] Compared with existing technical solutions, the present invention has at least the following beneficial effects: The piezoelectric effect-based dynamically tunable nanoimprint template provided by this invention utilizes the interlayer strain transfer and amplification mechanism to achieve compatibility between the driving mechanism and the imprinting process. This nanoimprint template can achieve dynamic adjustment of the geometric parameters of nanostructures over a wide range, with nanometer precision and microsecond-level rapid response. The rate of change of the characteristic size or period value of the nanostructure can reach 0.1%~5%, with an accuracy of less than 1 nm. It can withstand typical nanoimprinting pressures of 0.1 MPa~10 MPa, exhibiting good stability, and is particularly suitable for ultraviolet imprinting. By implementing dynamic adjustment, it is beneficial to significantly reduce the cost of template remanufacturing and improve the efficiency of R&D iteration. Attached Figure Description

[0046] Figure 1 This is a schematic diagram of the layer structure of the dynamically tunable nanoimprint template based on the piezoelectric effect provided in Example 1. In the figure: 1-flexible substrate layer, 2-nanostructure layer, 3-piezoelectric active driving structure, 4-piezoelectric material layer, 5-first electrode layer, 6-second electrode layer. Detailed Implementation

[0047] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0048] The scope of this invention can be defined by lower and upper limits. The selected lower and upper limits define the boundaries of a specific range. The range defined in this way can be defined by the inclusion or exclusion of endpoints. Any endpoint can be independently selected for inclusion or exclusion, and all lower and upper limits can be arbitrarily combined to form new ranges. That is, any lower limit can be combined with any upper limit to form an effective range. For example, if the ranges of 60~120 and 80~110 are listed for specific parameters, it should be understood that the ranges of 60~110 and 80~120 also fall within the scope of this invention. In addition, if the minimum range values ​​1 and 2 are listed, and the maximum range values ​​3, 4 and 5 are also listed, then all ranges of 1~3, 1~4, 1~5, 2~3, 2~4 and 2~5 fall within the scope of this invention. In this invention, the numerical range "a~b" represents a shortened representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0~5" means that all real numbers between 0 and 5 have been fully listed in this document, and "0~5" is only a shortened representation of this set of numerical combinations. When a parameter is expressed as an integer ≥2, it is equivalent to listing positive integers that meet the requirements, such as 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. When a parameter is expressed as an integer selected from "2~10", it is equivalent to listing any integer among 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0049] In this invention, "a combination of at least two" refers to a quantity greater than or equal to 2 unless otherwise specified. For example, "any one or a combination of at least two" means that any one of the listed items can be selected, or a combination of at least two of the listed items formed in a manner that does not conflict and enables the implementation of this invention. In this invention, unless otherwise specified, the features or solutions corresponding to "and / or" cover any one of two or more related listed items, as well as any and all combinations of the related listed items. The arbitrary and all combinations include any two related listed items, any more related listed items, or a combination of all related listed items. For example, "A and / or B" means a set consisting of A, B, and combinations of A and B, where "containing A and / or B" can be understood, depending on the context of the statement, as containing A, containing B, or simultaneously containing both A and B. In this invention, "optional" means that the corresponding feature, component, step or solution is not necessary, that is, it is selected from either "with" or "without". If there are multiple "optional" limitations in a technical solution, unless otherwise specified and there is no technical conflict or mutual constraint, each "optional" limitation is independent and does not affect the others.

[0050] In this invention, technical features or solutions described using open-ended terms such as "comprising" or "including" do not exclude additional non-conflicting elements beyond the listed elements unless otherwise specified. They are considered to disclose both closed-ended features or solutions consisting solely of the listed elements and open-ended features or solutions that may include additional non-conflicting elements beyond the listed elements. For example, if A includes a1, a2, and a3, unless otherwise specified, this means that A can consist only of a1, a2, and a3, or it can include other non-conflicting elements based on a1, a2, and a3. This corresponds to the disclosure of technical solutions such as "A consists of a1, a2, and a3," "A is selected from a1, a2, and a3," and "A not only includes a1, a2, and a3, but may also include other non-conflicting elements." All embodiments and optional embodiments of this invention, unless otherwise specified and without technical conflict, can be combined to form new technical solutions, and such combinations fall within the scope of this invention. The term "embodiment" as used in this invention means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of the invention. The appearance of this phrase in various locations throughout the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will understand, explicitly and implicitly, that the embodiments described in this invention can be combined with other embodiments that do not conflict with the technology. The ordinal numbers "first," "second," "third," and "fourth," etc., used in the expressions "first aspect," "second aspect," "third aspect," and "fourth aspect" in this invention are for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly specifying the importance or quantity of the indicated technical features. They serve only as a non-exhaustive enumeration and do not constitute a closed limitation on quantity.

[0051] In this invention, the order in which the steps are written in the methods described in the various embodiments does not imply a strict execution order. The actual execution order of each step should be determined based on its function and possible internal logic. Unless otherwise specified, all steps of this invention can be executed in the order they are written, or in any order without technical conflict. For example, if the method includes steps (a) and (b), it means that the method may include steps (a) and (b) executed sequentially, or it may include steps (b) and (a) executed sequentially. If the method also includes step (c), then step (c) can be added to the method in any conflict-free order, including but not limited to the execution order of steps (a), (b), and (c), steps (a), (c), and (b), steps (c), (a), and (b), etc.

[0052] In the description of this invention, the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0053] In the description of this invention, unless otherwise explicitly specified and limited, the terms "set up," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art will understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0054] Example 1 This embodiment provides a dynamically tunable nanoimprint template based on the piezoelectric effect, such as... Figure 1 As shown, it includes: Flexible substrate 1 has a front and a back side; the flexible substrate is PMDS, specifically Sylgard 184, with the basic components and curing agent in a 10:1 weight ratio, a thickness of 200 μm, and a Young's modulus of 1.5 MPa; Nanostructure layer 2 is disposed on the front side of the flexible substrate layer 1; nanostructure layer 2 is a UV-curable adhesive, specifically Ormocomp, with a thickness of 300 nm and a planar dimension of 50 × 50 mm. 2 The nanostructure layer 2 contains a periodic grating formed by nanostructures, with an initial period Λ0 = 400 nm, a linewidth of 200 nm, and a height of 150 nm. A piezoelectric active driving structure 3 is disposed on the back side of the flexible substrate 1, comprising a first electrode layer 5, a piezoelectric material layer 4, and a second electrode layer 6 stacked together. The first electrode layer 5 is close to and in contact with the flexible substrate 1. The piezoelectric material layer 4 is PZT with a thickness of 2 μm. The thickness ratio of the flexible substrate 1 to the piezoelectric material layer 4 is 100:1, and the spontaneous polarization direction of the piezoelectric material layer 4 is parallel to its thickness direction. 31 =-120pC / N; the first electrode layer 5 is Au / Cr with patterned interdigitated electrodes, with Au thickness of 50nm and Cr thickness of 10nm; the second electrode layer 6 is ITO with transmittance >85% and thickness of 150nm.

[0055] This embodiment also provides a method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect, including: S1: Piezoelectric Thin Film Preparation and Transfer A Pt / Ti seed layer (100 nm / 20 nm thick) was deposited on a temporary silicon substrate by magnetron sputtering; then a PZT precursor solution was coated by sol-gel method, annealed and crystallized at 650 °C, and repeated 3 to 5 times until the thickness was 2 μm to form a piezoelectric material layer. Au / Cr (50nm / 10nm thickness) is deposited on the side of the piezoelectric material layer away from the temporary silicon substrate, and the top electrode is patterned by photolithography or electron beam lithography to form interdigitated electrodes, i.e., the first electrode layer. PDMS was spin-coated on the side of the first electrode layer away from the piezoelectric material layer and cured at 80°C for 2 hours to form a flexible substrate layer. A KrF excimer laser (248 nm) was used to irradiate one side of the temporary silicon substrate on the back side to perform laser lift-off, thereby decomposing the PZT / silicon interface and realizing the transfer of the piezoelectric material layer-first electrode layer to the flexible substrate layer, thus obtaining the first composite structure. S2: Nanostructure Transfer Take a silicon substrate and define the target nanostructure pattern, i.e., a grating with a period of 400nm, on it using electron beam lithography; cast PDMS (main component to curing agent mass ratio of 10:1) on the silicon substrate, cure at 80℃, and obtain a PDMS soft stamp after demolding (peeling off the silicon template). A UV adhesive layer is formed by spin-coating a UV adhesive onto the surface of the flexible substrate layer of the first composite structure away from the first electrode layer. A PDMS soft stamp is then placed in contact with the UV adhesive layer, and a pressure of 0.5 MPa is applied for soft embossing. Following this, UV exposure is performed at a wavelength of 365 nm and a power density of 100 mW / cm². 2 Irradiation time is 60s to complete curing; demolding (peeling off the PDMS soft stamp) yields a second composite structure in which the nano-nano pattern of the nanostructure is transferred to the surface to form a nano-structure layer. S3: Bottom electrode integration ITO is sputtered on the side of the piezoelectric material layer away from the first electrode layer to form a second electrode layer; To facilitate subsequent voltage application and nanoimprinting, the second electrode layer is photolithographically patterned to define the electrode lead pattern. After wet etching, an external driving circuit (such as a function generator or high-voltage amplifier) ​​is connected via silver wires so that a voltage can be applied to the piezoelectric material layer through the first and second electrode layers, thereby driving the piezoelectric active drive structure.

[0056] Characterization and testing: The obtained dynamically tunable nanoimprint template based on the piezoelectric effect was subjected to an externally driven circuit with a voltage applied within a range of ±50V. It was found that the period value could be changed from an initial 400nm to 398nm (-50V) and then adjusted to 402nm (+50V). The linearity R between voltage and period value was observed. 2 =0.998; adjustment accuracy 0.04nm / V, and repeatability <0.1nm after 10 cycles.

[0057] This embodiment also provides a nanoimprinting method, which uses a dynamically tunable nanoimprinting template based on the piezoelectric effect to perform the following steps: T1, Template Adjustment: Apply the target voltage, monitor the diffraction angle in real time (or in-situ AFM), and confirm that the period value reaches the set value Λ from the initial value Λ0. set Maintain voltage; T2. Coating: Spin-coating UV adhesive (such as Ormocomp) onto the substrate to be imprinted (silicon, glass or flexible PET) to form a UV adhesive layer with a thickness of 300nm; T3. Contact: Align one side of the nanostructure layer of the nanoimprint template with the substrate, attach it to the UV adhesive layer, apply a pressure of 0.5MPa~1MPa to perform imprinting, and keep the voltage constant during the imprinting process to ensure that the geometric parameters of the nanostructure are stable during the imprinting. T4. Exposure and Curing: UV exposure is performed through one side of the second electrode layer of the nanoimprint template at a wavelength of 365nm and a power density of 100mW / cm². 2 Irradiation time: 60 seconds; T5. Demolding: Slowly separate the nanoimprint template, control the demolding speed to <1mm / s, avoid adhesion that could cause structural damage, form a curing adhesive that retains the nanopattern on the substrate to be imprinted, complete the imprinting process, and obtain the imprinted product. T6. Reset: The voltage is reduced to zero, allowing the nanoimprint template to return to its initial state (i.e., the initial period value Λ0 is restored), preparing for the next imprint.

[0058] Tests showed that the deviation between the grating period value in the imprinted product and the period value on the nanoimprint template was <0.5%, and the linewidth deviation was <3%, demonstrating high precision and stability. Therefore, this nanoimprint template can be applied to fields such as tunable grating couplers and Q-value optimization of photonic crystal cavities.

[0059] Example 2 This embodiment provides a dynamically tunable nanoimprint template based on the piezoelectric effect, comprising: The flexible substrate has a front and a back side; the flexible substrate is made of PI, with a thickness of 500 μm and a Young's modulus of 8 MPa. A nanostructure layer is disposed on the front side of the flexible substrate layer; the nanostructure layer is a UV-curable adhesive, specifically Ormocomp, with a thickness of 1.8 μm and a planar dimension of 80 × 80 mm. 2 The nanostructure layer contains a periodic array of pores formed by nanostructures, with a diameter of 5 μm and a spacing of 3 μm. A piezoelectric active driving structure is disposed on the back side of the flexible substrate layer, comprising a first electrode layer, a piezoelectric material layer, and a second electrode layer stacked thereon. The first electrode layer is close to and in contact with the flexible substrate layer. The piezoelectric material layer is PZT-5H with a thickness of 2.5 μm. The thickness ratio of the flexible substrate layer to the piezoelectric material layer is 200:1, and the spontaneous polarization direction of the piezoelectric material layer is parallel to its thickness direction. 31 =-120pC / N; the first electrode layer is Au / Cr with patterned interdigitated electrodes, with an Au thickness of 80nm and a Cr thickness of 20nm; the second electrode layer is PEDOT:PSS with a thickness of 1μm.

[0060] This embodiment also provides a method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect, including: S1: Piezoelectric Thin Film Preparation and Transfer A Pt / Ti seed layer (120 nm / 24 nm thick) was deposited on a temporary silicon substrate by magnetron sputtering; then a PZT precursor solution was coated by sol-gel method, annealed and crystallized at 680 °C, and repeated 3 to 5 times until the thickness was 2.5 μm to form a piezoelectric material layer. Au / Cr is deposited on the side of the piezoelectric material layer away from the temporary silicon substrate, and the top electrode is patterned using photolithography to form an interdigitated electrode, i.e., the first electrode layer. PI was spin-coated onto the side of the first electrode layer away from the piezoelectric material layer and cured at 80°C for 2 hours to form a flexible substrate layer. A KrF excimer laser (248 nm) is used to irradiate one side of the temporary silicon substrate on the back side to perform laser lift-off, thereby transferring the piezoelectric material layer-first electrode layer to the flexible substrate layer and obtaining the first composite structure. S2: Nanostructure Transfer Take a silicon substrate and define the target nanostructure pattern, i.e., the hole array, on it using traditional photolithography. Cast PDMS (main component to curing agent mass ratio of 10:1) on the silicon substrate, cure at 80°C, and obtain PDMS soft stamp after demolding (peeling off the silicon template). A UV adhesive layer is formed by spin-coating a UV adhesive onto the surface of the flexible substrate layer of the first composite structure away from the first electrode layer. A PDMS soft stamp is then placed in contact with the UV adhesive layer, and a pressure of 1 MPa is applied for soft embossing. Following this, UV exposure is performed at a wavelength of 365 nm and a power density of 100 mW / cm². 2Irradiation time is 60s to complete curing; demolding (peeling off the PDMS soft stamp) yields a second composite structure in which the nano-nano pattern of the nanostructure is transferred to the surface to form a nano-structure layer. S3: Bottom electrode integration A second electrode layer is formed by coating PEDOT:PSS on the side of the piezoelectric material layer away from the first electrode layer and annealing it at 80°C. To facilitate subsequent voltage application and nanoimprinting, the second electrode layer is photolithographically patterned to define the electrode lead pattern. After wet etching, an external driving circuit (such as a function generator or high-voltage amplifier) ​​is connected via silver wires so that a voltage can be applied to the piezoelectric material layer through the first and second electrode layers, thereby driving the piezoelectric active drive structure.

[0061] Characterization and testing: The obtained dynamically tunable nanoimprint template based on the piezoelectric effect was subjected to an externally driven voltage, varying within the range of -60V to +60V. It was found that the diameter could be changed from an initial 5μm to 4.80μm (-60V) and then further adjusted to 5.20μm (+60V). The linearity R between voltage and diameter was observed. 2 =0.997; adjustment accuracy 3.3nm / V, and repeatability <0.2nm after 10 cycles. Due to the large Young's modulus of PI (8MPa), the interlayer strain transfer efficiency is slightly lower than that of PDMS. The required larger adjustment range can be achieved by increasing the voltage range. This embodiment also provides a nanoimprinting method, which uses a dynamically tunable nanoimprinting template based on the piezoelectric effect to perform the following steps: T1, Template Shaping: Apply the target voltage and monitor the diffraction angle (or in-situ AFM) in real time to confirm that the diameter reaches the set value from the initial value; T2. Coating: Spin-coating UV adhesive (such as Ormocomp) onto the substrate to be imprinted (silicon, glass or flexible PET) to form a UV adhesive layer with a thickness of 600nm; T3. Contact: Align one side of the nanostructure layer of the nanoimprint template with the substrate, attach it to the UV adhesive layer, apply a pressure of 5MPa~10MPa to perform imprinting, and keep the voltage constant during the imprinting process to ensure that the geometric parameters of the nanostructure are stable during the imprinting. T4. Exposure and Curing: UV exposure is performed through one side of the second electrode layer of the nanoimprint template at a wavelength of 365nm and a power density of 100mW / cm². 2 Irradiation time: 120 seconds; T5. Demolding: Slowly separate the nanoimprint template, control the demolding speed to <1mm / s, avoid adhesion that could cause structural damage, form a curing adhesive that retains the nanopattern on the substrate to be imprinted, complete the imprinting process, and obtain the imprinted product. T6. Reset: The voltage is reduced to zero, allowing the nanoimprint template to return to its initial state (i.e., restore the initial diameter), preparing for the next imprint.

[0062] Tests showed that the diameter of the holes in the embossed product deviated from the diameter of the holes on the nanoimprint template by less than 0.8%, and the spacing deviation was less than 1.5%, demonstrating high precision and stability.

[0063] Example 3 This embodiment provides a dynamically tunable nanoimprint template based on the piezoelectric effect, comprising: The flexible substrate has a front and a back side; the flexible substrate is made of PET, with a thickness of 52.5 μm and a Young's modulus of 1 MPa. A nanostructure layer is disposed on the front side of the flexible substrate layer; the nanostructure layer is a UV-curable adhesive, specifically Ormocomp, with a thickness of 1.8 μm and a planar dimension of 10 × 10 mm. 2 The nanostructure layer contains a periodic grating formed by nanostructures, with an initial period Λ0 = 100 nm, a linewidth of 30 nm, and a height of 200 nm. A piezoelectric active driving structure is disposed on the back side of the flexible substrate layer, comprising a first electrode layer, a piezoelectric material layer, and a second electrode layer stacked thereon. The first electrode layer is close to and in contact with the flexible substrate layer. The piezoelectric material layer is PZT-5H with a thickness of 0.35 μm. The thickness ratio of the flexible substrate layer to the piezoelectric material layer is 150:1, and the spontaneous polarization direction of the piezoelectric material layer is parallel to its thickness direction. 31 =-120pC / N; the first electrode layer is patterned silver nanowires forming interdigitated electrodes with a thickness of 100nm, and the second electrode layer is PEDOT:PSS with a thickness of 1.2μm.

[0064] This embodiment also provides a method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect, including: S1: Piezoelectric Thin Film Preparation and Transfer A Pt / Ti seed layer (80 nm / 16 nm thick) was deposited on a temporary silicon substrate by magnetron sputtering; then a PZT precursor solution was coated by sol-gel method, annealed and crystallized at 630 °C, and repeated 3 to 5 times until the thickness was 0.35 μm to form a piezoelectric material layer. Silver nanowires are deposited on the side of the piezoelectric material layer away from the temporary silicon substrate, and the top electrode is patterned by photolithography or electron beam lithography to form interdigitated electrodes, i.e., the first electrode layer. PET is spin-coated on the side of the first electrode layer away from the piezoelectric material layer and cured at 80°C for 2 hours to form a flexible substrate layer; A KrF excimer laser (248 nm) was used to irradiate one side of the temporary silicon substrate on the back side to perform laser lift-off, thereby decomposing the AlN / silicon interface and realizing the transfer of the piezoelectric material layer-first electrode layer to the flexible substrate layer, thus obtaining the first composite structure. S2: Nanostructure Transfer Take a silicon substrate and define the target nanostructure pattern, i.e., grating, on it using electron beam lithography; cast PDMS (main component to curing agent mass ratio of 10:1) on the silicon substrate, cure at 80°C, and obtain PDMS soft stamp after demolding (peeling off the silicon template); A UV adhesive layer is formed by spin-coating a UV adhesive onto the surface of the flexible substrate layer of the first composite structure away from the first electrode layer. A PDMS soft stamp is then placed in contact with the UV adhesive layer, and a pressure of 0.3 MPa is applied for soft embossing. Following this, UV exposure is performed at a wavelength of 365 nm and a power density of 100 mW / cm². 2 Irradiation time is 60s to complete curing; demolding (peeling off the PDMS soft stamp) yields a second composite structure in which the nano-nano pattern of the nanostructure is transferred to the surface to form a nano-structure layer. S3: Bottom electrode integration A second electrode layer is formed by coating PEDOT:PSS on the side of the piezoelectric material layer away from the first electrode layer and annealing it at 80°C. To facilitate subsequent voltage application and nanoimprinting, the second electrode layer is photolithographically patterned to define the electrode lead pattern. After wet etching, an external driving circuit (such as a function generator or high-voltage amplifier) ​​is connected via silver wires so that a voltage can be applied to the piezoelectric material layer through the first and second electrode layers, thereby driving the piezoelectric active drive structure.

[0065] Characterization and testing: The obtained dynamically tunable nanoimprint template based on the piezoelectric effect was subjected to an externally driven voltage, varying within the range of -7.3V to +7.3V. It was found that the period value could be changed from an initial 100nm to 95nm (+7.3V) and then adjusted to 105nm (-7.3V). The linearity R between voltage and period value was observed. 2 =0.995; adjustment accuracy 0.68nm / V, and repeatability <0.15nm after 10 cycles. In this embodiment, the piezoelectric material layer thickness is only 0.35μm, which can generate a high electric field strength at a low voltage, thereby obtaining a large in-plane strain; This embodiment also provides a nanoimprinting method, which uses a dynamically tunable nanoimprinting template based on the piezoelectric effect to perform the following steps: T1, Template Shaping: Apply the target voltage and monitor the diffraction angle (or in-situ AFM) in real time to confirm that the diameter reaches the set value from the initial value; T2. Coating: Spin-coating UV adhesive (such as Ormocomp) onto the substrate to be imprinted (silicon, glass or flexible PET) to form a UV adhesive layer with a thickness of 600nm; T3. Contact: Align one side of the nanostructure layer of the nanoimprint template with the substrate, attach it to the UV adhesive layer, apply a pressure of 1MPa~2MPa to perform imprinting, and keep the voltage constant during the imprinting process to ensure that the geometric parameters of the nanostructure are stable during the imprinting. T4. Exposure and Curing: UV exposure is performed through one side of the second electrode layer of the nanoimprint template at a wavelength of 365nm and a power density of 100mW / cm². 2 Irradiation time: 120 seconds; T5. Demolding: Slowly separate the nanoimprint template, control the demolding speed to <1mm / s, avoid adhesion that could cause structural damage, form a curing adhesive that retains the nanopattern on the substrate to be imprinted, complete the imprinting process, and obtain the imprinted product. T6. Reset: The voltage is reduced to zero, allowing the nanoimprint template to return to its initial state (i.e., restore the initial diameter), preparing for the next imprint.

[0066] Tests showed that the deviation between the period value of the grating in the embossed product and the period value of the grating on the nanoimprint template was <0.6%, and the linewidth deviation was <2.8%, demonstrating high precision and stability.

[0067] Example 4 The difference from Example 1 is that the thickness of the flexible substrate 1 is adjusted from 200 μm to 100 μm, so that the thickness ratio of the flexible substrate 1 to the piezoelectric material layer 4 is adjusted from 100:1 to 50:1. Apart from the above, the other conditions are exactly the same as those in Example 1.

[0068] After testing, by applying voltage through an external drive circuit and varying the voltage within the range of -50V to +50V, it was found that the period value could be changed from the initial 400nm to 394nm (-50V) and then adjusted to 406nm (+50V). The linearity R between the voltage and the period value was [not specified]. 2 =0.989; adjustment accuracy 0.12nm / V, and repeatability <0.3nm after 10 cycles. After the flexible substrate is thinned, the interlayer strain transfer efficiency is improved, and a larger change in geometric parameters can be obtained under the same voltage, but the adjustment accuracy decreases slightly, while the linearity remains good. After imprinting, the deviation between the period value of the grating in the imprinted product and the period value of the grating on the nanoimprint template is <0.9%, and the linewidth deviation is <4.2%, demonstrating high precision and stability.

[0069] Example 5 The difference from Example 1 is that the thickness of the flexible substrate 1 is adjusted from 200 μm to 600 μm, so that the thickness ratio of the flexible substrate 1 to the piezoelectric material layer 4 is adjusted from 100:1 to 300:1. Apart from the above, the other conditions are exactly the same as those in Example 1.

[0070] After testing, by applying voltage through an external driving circuit and varying it within the range of -50V to +50V, it was found that the period value could be changed from the initial 400nm to 399.2nm (-50V) and then adjusted to 400.8nm (+50V). The linearity R between the voltage and the period value was [not specified]. 2 =0.999; adjustment accuracy 0.016nm / V, and repeatability <0.05nm after 10 cycles. After thickening the flexible substrate, the amplification effect of interlayer strain transfer is weakened, and the change amplitude of geometric parameters is significantly reduced, but the adjustment accuracy and linearity are both excellent, making it suitable for small-range fine-tuning scenarios with extremely high adjustment accuracy requirements.

[0071] After imprinting, the deviation between the period value of the grating in the imprinted product and the period value of the grating on the nanoimprint template is <0.3%, and the linewidth deviation is <1.8%, demonstrating high precision and stability.

[0072] Example 6 The difference from Embodiment 1 is that when the first electrode layer 5 is patterned to form interdigitated electrodes, the first electrode layer 5 is simultaneously patterned into 4 independent quadrants, and 4 external driving power supplies are connected to each quadrant. This allows the geometric parameters of each quadrant to be independently controlled, thereby enabling the realization of a nanostructure layer of spatially gradient gratings and the implementation of ultraviolet transfer during use. As a result, the dynamically adjustable nanoimprint template based on the piezoelectric effect and the transfer method using it can be used to manufacture achromatic metasurface lenses to compensate for dispersion, multifocal microlens arrays, variable angle grating couplers, and other fields.

[0073] Comparative Example 1 Comparative Example 1 compares the traditional rigid nanoimprint template and the MEMS suspended film nanoimprint template with the dynamically tunable nanoimprint templates based on the piezoelectric effect in Examples 1-3. The results are shown in Table 1 below: Table 1 As can be seen from the above, the dynamically adjustable nanoimprint template based on the piezoelectric effect provided by this invention utilizes the interlayer strain transfer and amplification mechanism to achieve compatibility between the driving mechanism and the imprinting process. This nanoimprint template can achieve dynamic adjustment of the geometric parameters of the nanostructure over a wide range, with nanometer precision and microsecond-level rapid response. The rate of change of the characteristic size or period value of the nanostructure can reach 0.1%~5%, with an accuracy of less than 1 nm. It can withstand typical nanoimprinting pressures of 0.1 MPa~10 MPa, exhibiting good stability, and is particularly suitable for ultraviolet imprinting. By implementing dynamic adjustment, it is beneficial to significantly reduce the cost of template remanufacturing and improve the efficiency of R&D iteration.

[0074] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0075] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0076] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A dynamically tunable nanoimprint template based on the piezoelectric effect, characterized in that, include: A flexible substrate layer with opposing front and back sides; A nanostructure layer is disposed on the front side of the flexible substrate layer; A piezoelectric active driving structure is disposed on the back side of the flexible substrate layer, comprising a first electrode layer, a piezoelectric material layer, and a second electrode layer stacked together, wherein the first electrode layer is close to the flexible substrate layer; the piezoelectric active driving structure is configured to drive changes in the geometric parameters of the nanostructures in the nanostructure layer by applying a voltage.

2. The dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 1, characterized in that, The spontaneous polarization direction of the piezoelectric material layer is parallel to the thickness direction.

3. The dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 1, characterized in that, The piezoelectric material layer includes at least one of lead zirconate titanate, aluminum nitride, or zinc oxide. And / or, the thickness of the piezoelectric material layer is 0.5μm~5μm.

4. The dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 1, characterized in that, The flexible substrate layer includes at least one of polydimethylsiloxane, polyimide, or polyethylene terephthalate; And / or, the thickness of the flexible substrate layer is 50μm~500μm, and the Young's modulus is 0.1MPa~10MPa; And / or, the thickness ratio of the flexible substrate layer to the piezoelectric material layer is (100~200):

1.

5. The dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 1, characterized in that, The nanostructure layer satisfies at least one of the following characteristics: (A1) The nanostructures in the nanostructure layer form aperiodic or periodic micro / nano patterns; (A2) The micro / nano pattern includes gratings and / or arrays of holes; (A3) The feature size of the micro-nano pattern is 10 nm to 10 μm; (A4) The geometric parameters include at least one of the characteristic size, period value, or curvature of the micro / nano pattern; (A5) The nanostructure layer includes a UV-curable adhesive; (A6) The thickness of the nanostructure layer is 100 nm to 2 μm.

6. The dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 1, characterized in that, Both the first electrode layer and the second electrode layer include transparent electrodes; the transparent electrodes include at least one of transparent conductive oxide, transparent conductive organic material, patterned metal layer, metal nanowire, or carbon-based material; the transparent conductive oxide includes indium tin oxide; the transparent conductive organic material includes poly(3,4-ethylenedioxythiophene-polystyrene sulfonate); the patterned metal layer includes a gold / chromium bimetallic layer; the metal nanowire includes silver nanowire; and the carbon-based material includes graphene and / or carbon nanotubes. And / or, the thickness of both the first electrode layer and the second electrode layer is 50nm~300nm.

7. A method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect as described in any one of claims 1-6, characterized in that, Includes the following steps: Prepare or provide a piezoelectric material layer; A first electrode layer is formed on one of the two opposing surfaces of the piezoelectric material layer; A flexible substrate layer is formed on the side of the first electrode layer away from the piezoelectric material layer; A nanostructured raw material layer is formed on the side of the flexible substrate away from the first electrode layer, and the nanostructured raw material layer is imprinted or transferred to form a nanostructured layer. A second electrode layer is formed on the surface of the piezoelectric material layer opposite to the first electrode layer.

8. The method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 7, characterized in that, The methods for preparing piezoelectric material layers include sol-gel methods or magnetron sputtering, and at least one of the following conditions must be met: (B1) The sol-gel method includes: providing a temporary substrate; depositing a metal seed layer on the temporary substrate; coating a piezoelectric material precursor solution on the metal seed layer; annealing to form a piezoelectric material layer; and peeling off the temporary substrate. (B2) The temporary substrate includes a silicon substrate; (B3) The metal seed layer comprises a stacked titanium layer with a thickness of 5 nm to 35 nm and a platinum layer with a thickness of 30 nm to 70 nm; (B4) The piezoelectric material precursor solution includes a lead zirconate titanate precursor solution; (B5) The annealing temperature is 600℃~700℃; (B6) The method of stripping the temporary substrate includes at least one of laser stripping, wet etching or mechanical stripping.

9. The method for manufacturing a dynamically tunable nanoimprint template based on the piezoelectric effect according to claim 7, characterized in that, The transfer method includes: providing a silicon substrate with a nanostructure; preparing a soft stamp using a silicon template; imprinting and curing the nanostructured raw material layer using the soft stamp; and peeling off the soft stamp to form the nanostructured layer; and satisfying at least one of the following conditions: (C1) The material of the soft stamp includes polydimethylsiloxane; (C2) The imprinting pressure is 0.1 MPa to 1 MPa; (C3) The curing method includes UV exposure.

10. A method for nanoimprinting, characterized in that, The method includes: Using the dynamically adjustable nanoimprint template based on the piezoelectric effect as described in any one of claims 1-6, a voltage is applied to the piezoelectric material layer before or during imprinting to make the nanostructure achieve the target geometric parameters, thereby performing imprinting.

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