Epitaxial growth apparatus and epitaxial growth method
By employing a rotating support device and a robotic arm in the epitaxial growth equipment, the tray assembly and support cylinder can be quickly connected and separated, solving the problem of low substrate placement and sampling efficiency in the existing technology, and improving production efficiency and epitaxial growth yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICENTURY SEMICONDUCTOR TECHNOLOGY (SUZHOU) CO LTD
- Filing Date
- 2026-06-08
- Publication Date
- 2026-07-10
AI Technical Summary
Existing CVD equipment is inefficient in the substrate placement and sampling processes, which affects production efficiency.
Design an epitaxial growth apparatus including a pick-and-place chamber, a reaction chamber, and a transfer chamber. Employ a rotating bearing device and a robotic arm to quickly connect and separate the tray assembly and the support cylinder by positioning the tray assembly in the pick-and-place chamber and precisely positioning the support cylinder in the reaction chamber. This avoids particles falling onto the substrate surface and simplifies the substrate mounting process.
This improved the substrate placement and sampling speed, reduced particle generation, and increased the yield and production efficiency of epitaxial growth.
Smart Images
Figure CN122358320A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of epitaxial growth technology, specifically to an epitaxial growth device and an epitaxial growth method. Background Technology
[0002] In existing technologies, CVD equipment prepares gallium nitride, silicon carbide, or other single-crystal thin film materials through chemical vapor deposition. During reaction growth, the substrate needs to be transported from the pick-and-place chamber to the reaction chamber, where it undergoes epitaxial growth. The placement and removal of the substrate in the pick-and-place chamber and the reaction chamber occupy a certain amount of epitaxial reaction time. Therefore, improving the substrate placement and removal speed is of great value to production efficiency. Summary of the Invention
[0003] To overcome the above-mentioned shortcomings, the purpose of this application is to provide an epitaxial growth device and an epitaxial growth method. The epitaxial growth device can perform gallium nitride epitaxial growth, and its operation can improve the substrate placement and sampling speed, thereby improving production efficiency.
[0004] To achieve the above objectives, this application adopts the following technical solution:
[0005] An epitaxial growth apparatus is provided for epitaxial growth, comprising a pick-and-place chamber, a reaction chamber, and a transfer chamber. The pick-and-place chamber has a rotating support device for supporting a tray assembly. The tray assembly has multiple receiving parts for placing substrates. The side of the tray assembly corresponding to the substrate growth surface faces the rotating support device. The pick-and-place chamber is provided with a first positioning element, and the rotating support device determines a first position of the tray assembly based on the first positioning element. The reaction chamber includes a spray device located at the bottom side of the reaction chamber and a driving device located at the top side of the reaction chamber. The driving device is connected to a support cylinder located in the reaction chamber. The support cylinder is used to place the tray assembly, and the growth surface of the substrate on the tray assembly faces the spray device. A second positioning element is provided on the outer top of the reaction chamber, and the driving device determines the connection and separation position of the support cylinder relative to the tray assembly based on the second positioning element. The transfer chamber is provided with a robotic arm for transferring the tray assembly.
[0006] In one embodiment, the tray assembly is provided with a connecting portion that connects to the support cylinder, and the support cylinder is provided with a notch for the connecting portion to pass through and a recess that matches the connecting portion.
[0007] In one embodiment, the connection separation position includes a second position and a third position, and the driving device determines the second position based on the second positioning element and determines the third position based on the second position.
[0008] In one embodiment, the orthographic projection of the connecting portion in the axial direction of the support cylinder is located within the range of the notch at the second position, and the orthographic projection of the connecting portion in the axial direction of the support cylinder is located within the range of the recess at the third position.
[0009] In one embodiment, the tray assembly includes a main body, the surface of the main body facing the support cylinder having a first protrusion extending axially along the main body, and a connecting portion located at the inner edge of the first protrusion and extending radially along the first protrusion.
[0010] In one embodiment, the support cylinder includes a main body cylinder, the outer surface of the main body cylinder facing the tray assembly having a second protrusion extending radially therein, a notch provided on the second protrusion and extending axially through the second protrusion, and a recess provided on the side of the second protrusion facing the drive device.
[0011] In one embodiment, the storage portion is located on the main body and extends axially through the main body. A third protrusion extending radially is formed on the inner side of the storage portion, and the axial thickness of the third protrusion is less than the axial thickness of the main body.
[0012] In one embodiment, in the axial direction of the support cylinder, the height of the connecting portion is less than the height of the first protrusion, the depth of the recess is less than the height of the second protrusion, and the distance between the connecting portion and the side of the main body portion away from the substrate growth surface is a first distance, which is greater than the height of the second protrusion.
[0013] In one embodiment, the width of the recess is smaller than the width of the second protrusion in the radial direction of the support cylinder.
[0014] In one embodiment, there are multiple connecting portions, and the multiple connecting portions are evenly distributed along the circumference of the first protrusion.
[0015] In one embodiment, there are multiple recesses, notches, and connecting portions, and the notches and recesses are alternately and evenly distributed along the circumference of the second protrusion.
[0016] In one embodiment, the first positioning element includes a first positioning point located on the side of the tray assembly away from the substrate growth surface, and a first sensor located on the top side of the pick-and-place cavity. The rotating bearing device determines the first position of the tray assembly based on the first positioning point detected by the first sensor.
[0017] In one embodiment, the second positioning element includes a second positioning point located on the drive device and a second sensor located on the top outer side of the reaction chamber. The drive device determines the connection and separation position of the support cylinder relative to the tray assembly based on the second positioning point detected by the second sensor.
[0018] In one embodiment, the device further includes a centering assembly, which includes two clamping portions symmetrically arranged around the circumference of the rotating bearing device and a drive portion electrically connected to the corresponding clamping portions.
[0019] In one embodiment, the tray assembly is either an integral structure or a separate structure.
[0020] Based on the same inventive concept, this disclosure also provides an epitaxial growth method, which includes: placing multiple substrates or multiple substrates and a tray assembly on a rotating support device in a pick-and-place cavity, with the side of the tray assembly corresponding to the substrate growth surface facing the rotating support device; using the rotating support device and a first positioning member, adjusting the tray assembly with multiple substrates to a first position, and using a robot to transfer the tray assembly with multiple substrates at the first position to a reaction cavity; using the robot to drive the tray assembly with multiple substrates to move along the axial direction of a support cylinder, and using a driving device and a second positioning member to rotate the support cylinder in the reaction cavity to a connection and separation position, thereby fixing the tray assembly with multiple substrates to the support cylinder, with the side of the tray assembly corresponding to the substrate growth surface facing a spray device at the bottom of the reaction cavity; using a driving device to drive the support cylinder to rotate and perform epitaxial growth on the multiple substrates; using the robot to drive the tray assembly with multiple substrates to move along the axial direction of the support cylinder, and using a driving device and a second positioning member to rotate the support cylinder to a connection and separation position, thereby separating the tray assembly from the support cylinder; and using the robot to transfer the separated tray assembly with multiple substrates to the pick-and-place cavity.
[0021] In one embodiment, after the step of placing multiple substrates or multiple substrates and a tray assembly on a rotating support device within the pick-and-place cavity, the method further includes: positioning the center of the tray assembly with multiple substrates using a centering component.
[0022] Beneficial effects
[0023] The epitaxial growth equipment and method provided in this application, by placing the spray device at the bottom of the reaction chamber and the tray assembly and support cylinder at the top of the reaction chamber, with the side of the tray assembly corresponding to the substrate growth surface facing the spray device, can avoid particles falling onto the substrate surface, greatly reducing particle generation and improving the yield of epitaxial growth. In this application, the tray assembly is inverted on the rotating bearing device in the pick-and-place chamber. This design facilitates the subsequent transfer of the tray assembly between the pick-and-place chamber and the reaction chamber by the robot, without the need to flip the tray assembly during the transfer process. Furthermore, in this application, the tray assembly is positioned in the pick-and-place chamber, and the support cylinder is positioned in the reaction chamber for connection and separation. The connection and separation positions are relative to the tray assembly. This design enables precise positioning and rapid connection or separation of the tray assembly and support cylinder, improving transfer efficiency. At the same time, in this application, the tray assembly with multiple substrates is directly connected or separated from the support cylinder. Therefore, during the wafer pick-and-place process in the reaction chamber, it is avoided to install the substrates one by one, simplifying the process and further improving transfer efficiency, thereby improving epitaxial production efficiency. Attached Figure Description
[0024] The accompanying drawings are provided to illustrate the technical solutions of this disclosure and form part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of this disclosure and do not constitute a limitation on the technical solutions of this disclosure. The shapes and sizes of the components in the drawings do not reflect actual proportions and are only intended to illustrate the content of this application.
[0025] Figure 1 This is a schematic diagram of the epitaxial growth apparatus in the embodiments of this application. Figure 1 ;
[0026] Figure 2 This is a schematic diagram of the epitaxial growth apparatus in the embodiments of this application. Figure 2 ;
[0027] Figure 3 This is a schematic diagram of the cavity extraction and manipulator structure in the embodiments of this application. Figure 1 ;
[0028] Figure 4 This is a schematic diagram of the cavity extraction and manipulator structure in the embodiments of this application. Figure 2 ;
[0029] Figure 5 This is a schematic diagram of the structure of the reaction chamber and the robotic arm in the embodiments of this application. Figure 1 ;
[0030] Figure 6 This is a schematic diagram of the structure of the reaction chamber and the robotic arm in the embodiments of this application. Figure 2 ;
[0031] Figure 7 This is a schematic diagram of the structure of the support cylinder and tray assembly in the embodiments of this application. Figure 1 ;
[0032] Figure 8 This is a schematic diagram of the structure of the support cylinder and tray assembly in the embodiments of this application. Figure 2 ;
[0033] Figure 9 for Figure 7 Enlarged diagram of part A in the middle;
[0034] Figure 10 for Figure 8 Enlarged diagram of section B;
[0035] Figure 11 This is a schematic flowchart of the epitaxial growth method provided in an embodiment of this application. Detailed Implementation
[0036] The above-described solution will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of this application. The implementation conditions used in the embodiments may be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not specified are generally those in routine experiments.
[0037] Unless otherwise defined, the technical or scientific terms used in the embodiments of this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the element or object listed following the word and its equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. In this document, "electrical connection" includes the situation where constituent elements are connected together by an element having some electrical function. There is no particular limitation on the "electrically functioning element," as long as it enables the transmission and reception of electrical signals between the connected constituent elements. An "electrically functioning element" can be, for example, an electrode or wiring, a switching element such as a transistor, or other functional elements such as a resistor, inductor, or capacitor. "Up," "down," "left," and "right" are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.
[0038] In this application, the terms "upper," "lower," "inner," "middle," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.
[0039] This application discloses an epitaxial growth apparatus and an epitaxial growth method. The epitaxial growth apparatus is used for epitaxial growth of materials such as gallium nitride and silicon carbide.
[0040] Next, combine Figures 1-11 This application describes the epitaxial growth apparatus and epitaxial growth method provided in the embodiments of this application.
[0041] This epitaxial growth equipment can be used for gallium nitride epitaxial growth. The equipment includes a pick-and-place chamber, a reaction chamber, and a transfer chamber. The pick-and-place chamber includes a rotating support device located at its bottom for carrying a tray assembly. The tray assembly has multiple receiving sections for placing substrates. The side of the tray assembly corresponding to the substrate growth surface faces the rotating support device. The rotating support device determines a first position of the tray assembly based on a first positioning element within the pick-and-place chamber. The reaction chamber includes a spray device located at its bottom, a support cylinder located at its top, and a drive device connected to the support cylinder. The side of the tray assembly corresponding to the substrate growth surface faces the spray device. The drive device determines the connection / separation position of the support cylinder relative to the support assembly based on a second positioning element on the top outer side of the reaction chamber. A robotic arm is installed in the transfer chamber for transferring tray assemblies containing multiple substrates. This epitaxial growth equipment can improve tray loading and unloading speed, reduce waiting time, and increase production efficiency.
[0042] refer to Figure 1 and Figure 2 The epitaxial growth apparatus includes a pick-and-place chamber 100, a reaction chamber 200, a buffer chamber 400, and a transfer chamber 300, wherein the pick-and-place chamber 100, the reaction chamber 200, and the buffer chamber 400 are arranged around the transfer chamber 300. The pick-and-place chamber 100 is used to place the substrate and tray assembly 20 to be epitaxially grown, or to place the substrate and tray assembly 20 that has already undergone epitaxial growth. The pick-and-place chamber 100 has an opening (not shown in the figures) and a cover plate covering the opening, through which the substrate or tray assembly 20 is placed into or removed from the pick-and-place chamber 100. The reaction chamber 200 is used for the substrate to undergo the epitaxial reaction, and the buffer chamber 400 is used to temporarily store the substrate and tray assembly 20 that has already undergone epitaxial growth and can be cooled within it. The transfer chamber 300 connects to the pick-and-place chamber 100, the reaction chamber 200, and the buffer chamber 400. To ensure the airtightness of each chamber, gate valves 90 are installed at the connection points between the pick-and-place chamber 100, the reaction chamber 200, and the buffer chamber 400 and the corresponding transfer chamber 300. A robot arm 70 is installed in the transfer chamber 300 to transfer the substrate-bearing tray assembly 20 between the pick-and-place chamber 100, the reaction chamber 200, and the buffer chamber 400. For example, the robot arm 70 can transfer the substrate-bearing tray assembly 20 from the pick-and-place chamber 100 to the reaction chamber 200, transfer the substrate-bearing tray assembly 20 after epitaxial reaction in the reaction chamber 200 to the buffer chamber 400, and transfer the substrate-bearing tray assembly 20 after cooling in the buffer chamber 400 back to the pick-and-place chamber 100.
[0043] Furthermore, the number of reaction chambers 200 can be multiple (e.g., 2 reaction chambers 200). Multiple reaction chambers 200 operate in a time-sharing manner, and each reaction chamber 200 is coordinated and controlled by the host computer. When one reaction chamber 200 is running the growth process, other reaction chambers 200 can perform processes such as loading (loading tray assembly) or unloading (unloading tray assembly). Of course, if there is a conflict in the time of feeding and unloading the wafers due to abnormal reasons, the host computer will sort them according to the priority principle or the order set manually to achieve the purpose of time-sharing operation.
[0044] refer to Figures 3-6 The pick-and-place cavity 100 of the epitaxial growth apparatus includes a rotating support device 10, which is located at the bottom side of the pick-and-place cavity 100. The rotating support device 10 is used to support and drive the tray assembly 20 to rotate. The rotating support device 10 has a support surface for supporting the tray assembly 20, and the side of the tray assembly 20 corresponding to the substrate growth surface faces the support surface. The tray assembly 20 includes a plurality of storage parts 24 for placing the substrate, which makes the tray assembly 20 in this application have a large volume. Since the space in the transfer cavity 300 is limited, the tray assembly 20 should be avoided from being flipped during the transfer of the tray assembly 20. A spray device (not shown in the attached figure) is provided on the bottom side of the reaction chamber 200, and a support cylinder 40 is provided on the top side of the reaction chamber 200 opposite to the spray device. The support cylinder 40 is used to support the tray assembly 20, and the side of the tray assembly 20 corresponding to the substrate growth surface is set towards the side of the spray device. A drive device 50 connected to the support cylinder 40 and used to drive the support cylinder 40 to rotate is provided on the side of the support cylinder 40 away from the spray device. The rotation speed of the substrate driven by the drive device 50 is less than 300 rpm, and further, the rotation speed of the substrate is less than 100 rpm to avoid the risk of the substrate flying disc or flying sheet.
[0045] In this embodiment, the spraying device is located at the bottom of the reaction chamber 200, while the tray assembly 20 and support cylinder 40 are located at the top. This design prevents particles from falling onto the substrate surface, significantly reducing particle generation and improving the yield of epitaxial growth. In the pick-and-place chamber 100, the tray assembly 20 is inverted on the rotating support device 10, and the substrate is also inverted relative to the rotating support device 10. This design facilitates the subsequent transfer of the tray assembly 20 between the pick-and-place chamber 100 and the reaction chamber 200 by the robot arm 70, avoiding the need to flip the tray assembly 20 during the transfer process. Inverted means that the surface of the substrate used for epitaxial growth is facing down.
[0046] Furthermore, a first positioning element 30 is provided within the loading / unloading cavity 100, and the rotating bearing device 10 determines the first position of the tray assembly 20 based on the first positioning element 30. A second positioning element 60 is provided on the outer top of the reaction chamber 200, and the driving device 50 determines the connection / separation position of the support cylinder 40 relative to the tray assembly 20 based on the second positioning element 60. Specifically, the tray assembly 20 is provided with a connecting portion 23 that matches and connects with the support cylinder 40, and the support cylinder 40 is provided with a notch 43 through which the connecting portion 23 passes and a recess 44 adapted to the connecting portion 23. The connection / separation positions include a second position and a third position. The driving device 50 determines the second position based on the second positioning element 60 and the third position based on the second position. When the support cylinder 40 switches between the second and third positions, the robot arm 70 drives the tray assembly 20 with the substrate to move along the axial direction of the support cylinder 40, thereby connecting or separating the tray assembly 20 with the substrate from the support cylinder 40. When the robotic arm 70 transfers the tray assembly 20 with substrates located at the first position to the reaction chamber 200, the orthographic projection of the connecting portion 23 in the axial direction of the support cylinder 40 is located within the range of the notch 43 at the second position, and the orthographic projection of the connecting portion 23 in the axial direction of the support cylinder 40 is located within the range of the recess 44 at the third position. In this application, the tray assembly 20 is positioned at the first position in the pick-and-place chamber 100, and the support cylinder 40 is positioned at the second and third positions in the reaction chamber 200. This design enables precise positioning and rapid installation or disassembly of the tray assembly 20 and the support cylinder 40. Furthermore, this application directly positions and connects or separates the tray assembly 20 with multiple substrates from the support cylinder 40, thus avoiding the installation of substrates one by one during the wafer pick-and-place process in the reaction chamber 200. This design further improves the transfer efficiency of wafer pick-and-place, thereby increasing epitaxial production efficiency.
[0047] refer to Figures 7-10In one embodiment, the tray assembly 20 includes a main body 21 for supporting a substrate. The main body 21 includes a first surface 211 and a second surface 212 disposed opposite to each other along its axial direction. The first surface 211 of the tray assembly 20 corresponds to one side of the growth surface of the substrate, and the second surface 212 of the tray assembly 20 faces away from the growth surface of the substrate. A receiving portion 24 is located on the main body 21 and axially penetrates the main body 21 (i.e., penetrates the first surface 211 and the second surface 212). A radially extending third protrusion (not shown in the figures) is formed on the inner side of the receiving portion 24, and the axial thickness of the third protrusion is less than the axial thickness of the main body 21. This design allows the receiving portion 24 to place the substrate, and the receiving portion 24 provides radial restraint for the substrate, while the third restraint provides axial restraint for the substrate, preventing the substrate from falling off the tray assembly 20 when it is placed upside down. Preferably, the third protrusion is located on the side of the receiving portion 24 near the first surface 211, which can further reduce the axial height of the substrate placed on the tray assembly 20.
[0048] In one embodiment, the second surface 212 of the main body 21 has a first protrusion 22 extending axially therein, the first protrusion 22 being a hollow cylindrical shape (the first protrusion, when projected onto the second surface, is annular), and a connecting portion 23 is disposed on the inner edge / inner side of the first protrusion 22 and extends radially therein. The support cylinder 40 includes a main body cylinder 41, which is a hollow structure, and the outer surface of the main body cylinder 41 facing away from the drive device 50 has a second protrusion 42 extending radially therein, the surface of the second protrusion 42 facing away from the drive device 50 being flush with the surface of the support cylinder 40 facing away from the drive device 50, a notch 43 and a recess 44 are both disposed on the second protrusion 42, wherein the notch 43 axially penetrates the second protrusion 42, and the recess 44 is disposed on the side of the second protrusion 42 facing the drive device 50. The recess 44 connects two adjacent surfaces of the second protrusion 42. Specifically, the recess 44 connects the side surface of the second protrusion 42 near the drive device 50 and the side surface of the second protrusion 42 radially away from the main body cylinder 41. This design provides redundant space for the tray assembly 20 during thermal expansion.
[0049] Furthermore, there are multiple connecting portions 23, which are evenly distributed circumferentially along the first protrusion 22. There are also multiple notches 43 and recesses 44, which alternate and are evenly distributed circumferentially along the second protrusion 42. This design facilitates uniform force distribution on the pallet assembly 20 and the support cylinder 40 in the circumferential direction. Preferably, the number of notches 43 is the same as the number of recesses 44.
[0050] Furthermore, in the axial direction of the support cylinder 40, the axial height H1 of the connecting part 23 is less than the axial height H2 of the first protrusion 22, the axial depth H3 of the recessed part 44 is less than the axial depth H4 of the second protrusion 42, and the radial width L1 of the recessed part 44 is less than the radial width L2 of the second protrusion 42. This design facilitates the subsequent connection or separation of the tray assembly 20 and the support cylinder 40.
[0051] Furthermore, in the axial direction of the support cylinder 40, the height H2 of the first protrusion 22 is greater than the sum of the height H1 of the connecting part 23 and the height H4 of the second protrusion 42 (H2>H1+H4). This design ensures that when the connecting part 23 passes through the notch 43 or separates from the recess 44, there is a gap between the second surface 212 of the tray assembly 20 and the side surface of the support cylinder 40 away from the second adjustment component. This can prevent the second surface 212 of the tray assembly 20 from being scratched by the rotation of the support cylinder 40 when taking or loading the tray.
[0052] Furthermore, the distance between the connecting portion 23 and the second surface 212 (the main body portion facing away from the substrate growth surface) is a first distance (the first distance here can specifically refer to the vertical distance between the side of the connecting portion 23 that is close to the second surface 212 in the axial direction and the second surface). This first distance is greater than the height H4 of the second protrusion. This design can not only avoid the second surface 212 of the tray assembly 20 being scratched by the rotation of the support cylinder 40 when taking or loading the tray, but also avoid the connecting portion on the tray assembly 20 from hindering the rotation of the support cylinder 40.
[0053] It should be noted that the tray assembly 20 in this application can be an integral structure or a separate structure.
[0054] In one embodiment, the first positioning member 30 includes a first positioning point 31 provided on the tray assembly 20, and a first sensor 32 provided on the top side of the pick-and-place cavity 100 for sensing the first positioning point 31. The rotating bearing device 10 determines a first position of the tray assembly 20 based on the first positioning point 31 detected by the first sensor 32. A second positioning point 61 is provided on the drive device 50, and a second sensor 62 is provided on the top outer side of the reaction cavity 200 for sensing the second positioning point 61. The drive device 50 determines a second position of the support cylinder 40 based on the second positioning point 61 detected by the second sensor 62, and determines a third position of the support cylinder 40 based on the second position. When the robotic arm 70 transfers the tray assembly 20 located at the first position to the reaction chamber 200, the orthographic projection of the connecting portion 23 in the axial direction of the support cylinder 40 lies within the range of the notch 43 at the second position, and the orthographic projection of the connecting portion 23 in the axial direction of the support cylinder 40 lies within the range of the recess 44 at the third position. In this application, the robotic arm 70 drives the tray assembly 20 to move up and down along the axial direction of the support cylinder 40, so that the connecting portion 23 passes through or exits the notch 43 at the second position. When the support cylinder 40 is in the third position, the robotic arm 70 drives the tray assembly 20 with the substrate to move up and down along the axial direction of the support cylinder 40, so that the connecting portion 23 overlaps or disengages from the notch 43. In this embodiment, by positioning the tray assembly 20 and the support cylinder 40, and through the cooperation of the connecting portion 23, the notch 43, and the recess 44, the installation or disassembly speed of the tray assembly 20 and the support cylinder 40 can be accelerated, thereby improving the transmission efficiency of the epitaxial growth equipment during production and thus improving production efficiency.
[0055] Furthermore, the epitaxial growth apparatus also includes a centering component 80 within its loading / unloading cavity 100. This centering component 80 is located at the bottom of the loading / unloading cavity 100 and is used to position the center of the tray assembly 20. The centering component 80 includes two clamping parts 81 symmetrically distributed around the support assembly 11 in the rotating support device 10, and a drive part 82 electrically connected to the corresponding clamping parts 81. By positioning the center of the tray assembly 20 using the two symmetrically distributed clamping parts 81, this embodiment first positions the center of the tray assembly 20 using the centering component 80, and then positions the tray assembly 20 to a first position using the first positioning point 31 and the rotating support device 10. This double-limits the position of the tray assembly 20 in the loading / unloading cavity 100, further ensuring the position of the tray assembly 20 and thereby further improving the alignment accuracy between the support cylinder 40 in the subsequent reaction chamber 200 and the tray assembly 20.
[0056] refer to Figure 3 and Figure 4In one specific embodiment, the rotating bearing device 10 includes a bearing assembly 11, a rotating component 12, and a transmission assembly 13. The rotating component 12 (such as a rotary motor) is disposed on the outer side of the bottom of the pick-and-place cavity 100, and the output end of the rotating component 12 is provided with a first rotating shaft 121 extending into the pick-and-place cavity 100. The bearing assembly 11 is rotatably disposed at the bottom of the pick-and-place cavity 100. For example, the bearing assembly 11 includes a fixed seat 111 fixedly disposed at the bottom of the pick-and-place cavity 100, a bearing rotating shaft 112 rotatably disposed on the fixed seat 111, and a bearing portion 113 disposed at one end of the bearing rotating shaft 112 opposite to the fixed seat 111. The bearing rotating shaft 112 and the fixed seat 111 are rotatably connected by bearings. The transmission assembly 13 connects the rotating component 12 and the bearing assembly 11, and is used to drive the first rotating shaft 121 in the rotating component 12 and the bearing part 113 in the bearing assembly 11 to rotate synchronously. The transmission assembly 13 includes a first gear 131 disposed at the output end of the first rotating shaft 121, a second gear 132 disposed on the outer periphery of the bearing shaft 112, and a belt 133 connecting the first gear 131 and the second gear 132. The rotating component 12 drives the first rotating shaft 121 and the transmission assembly 13 to slowly rotate the tray assembly 20 on the bearing part 113. When the first sensor 32 detects the first positioning point 31, the rotating component 12 stops running, and at this time the tray assembly 20 on the bearing part 113 is located in the first position.
[0057] refer to Figure 5 and Figure 6 In one specific embodiment, the driving device 50 includes a driving member (such as a frameless electrode) mounted on the outer side of the top of the reaction chamber 200 via a mounting portion, and a second rotating shaft 51 disposed at the output end of the driving member and extending into the reaction chamber 200. A support cylinder 40 is disposed at the end of the second rotating shaft 51 opposite to the driving member via a rotating disk. Rotation of the rotating disk drives the support cylinder 40 to rotate. The second positioning point 61 is located on the outer circumferential surface of the second rotating shaft 51 outside the reaction chamber 200. Furthermore, a magnetic fluid seal (not shown in the figures) is provided at the connection between the first rotating shaft 121 and the top of the reaction chamber 200. This magnetic fluid seal prevents the reaction chamber 200 from communicating with the atmosphere, and the aforementioned second sensor 62 is located on this magnetic fluid seal.
[0058] In one specific embodiment, the epitaxial growth apparatus further includes a pressure sensor (not shown in the figures), a vacuum valve (not shown in the figures), and a gas filling valve (not shown in the figures) disposed on the take-up and release chamber, the reaction chamber, and / or the transfer chamber. For example, the pressure sensor is used to detect the gas pressure inside the take-up and release chamber 100, the vacuum valve is used to evacuate the take-up and release chamber 100, and the gas filling valve is used to fill the take-up and release chamber 100 with purified gas. The pressure sensor is electrically connected to the vacuum valve and the gas filling valve respectively. The vacuum valve controls whether to open based on the gas pressure detected by the pressure sensor in each chamber; the gas filling valve controls whether to open based on the gas pressure detected by the pressure sensor in each chamber; the pressure sensor is also electrically connected to the gate valve 90, and the gate valve 90 controls whether to open based on the gas pressure detected by the pressure sensor in each chamber. Specifically, before the take-up and release chamber 100 is connected to the transmission chamber 300, the exhaust valve corresponding to the take-up and release chamber 100 is activated. When the pressure sensor detects that the pressure in the take-up and release chamber 100 is at the first preset pressure (e.g., 1-20 mbar), the exhaust valve of the take-up and release chamber 100 stops operating, and at the same time, the inflation valve of the take-up and release chamber 100 is activated to purify the take-up and release chamber 100. It should be noted that in actual application, the above steps need to be repeated N times, where N is greater than or equal to 2, in order to improve the purification degree of the take-up and release chamber 100 and prevent particles or dust in the take-up and release chamber 100 from being transmitted to the reaction chamber 200. In the Nth time, the inflation valve is used to introduce purified gas into the take-up and release chamber 100 to adjust the pressure of the take-up and release chamber 100 to the second preset pressure. The pressure difference between the second preset pressure and the pressure in the transmission chamber 300 is within a preset threshold (e.g., ±0-10 mbar). When the pressure in the take-up / release chamber 100 is adjusted to the second preset pressure, the gate valve 90 connecting the take-up / release chamber 100 and the transmission chamber 300 can be opened to achieve communication between the take-up / release chamber 100 and the transmission chamber 300. Further, before the take-up / release chamber 100 is connected to the atmospheric environment, the inflation valve of the take-up / release chamber 100 operates. When the pressure sensor detects that the pressure in the take-up / release chamber 100 is at the third preset pressure, the inflation valve of the take-up / release chamber 100 stops operating, and the opening of the take-up / release chamber 100 can be opened to connect with the atmospheric environment.
[0059] For example, the purification gas in this embodiment includes nitrogen, argon or other inert gases.
[0060] refer to Figure 11 Based on the same inventive concept, this disclosure also provides an epitaxial growth method, wherein the epitaxial growth method employs the epitaxial growth equipment described in the above embodiments (see reference). Figures 1-10 The epitaxial growth method includes the following steps:
[0061] S10: Place multiple substrates or multiple substrates and tray assembly 20 onto the rotating support device 10 of the pick-and-place cavity 100, with the side of the tray assembly 20 corresponding to the substrate growth surface facing the rotating support device 10.
[0062] Specifically, multiple substrates or multiple substrates and a tray assembly 20 are placed into the rotating support device 10 through the opening of the pick-and-place cavity 100, with the side of the tray assembly 20 corresponding to the substrate growth surface facing the rotating support device 10. If the pick-and-place cavity 100 has a tray assembly 20 before placement, the substrate can be directly placed on the tray assembly 20 through the opening of the pick-and-place cavity 100; if the pick-and-place cavity 100 does not have a tray assembly 20 before placement, then the tray assembly 20 with the substrate needs to be placed on the support assembly 11 of the rotating support device 10 through the opening of the pick-and-place cavity 100.
[0063] S20: Using the rotating bearing device 10 and the first positioning member 30, the tray assembly 20 with multiple substrates is adjusted to the first position, and the robotic arm 70 is used to transfer the tray assembly 20 with multiple substrates at the first position to the reaction chamber 200.
[0064] Specifically, the rotating component 12 in the rotating bearing device 10 of the take-out cavity 100 drives the tray assembly 20 on the bearing assembly 11 to rotate at a first speed. When the first sensor 32 detects the first positioning point 31, the rotating component 12 stops rotating. At this time, the tray assembly 20 on the bearing assembly 11 is located at the first position.
[0065] Simultaneously, after the tray assembly 20 is in the first position, the cover at the opening of the pick-and-place chamber 100 is closed.
[0066] Use the vacuum valve to evacuate the take-out chamber 100 to adjust the pressure of the take-out chamber 100 to the first preset pressure (e.g., 1-20 mbar). After the pressure of the take-out chamber 100 reaches the first preset pressure, close the vacuum valve.
[0067] Using an inflation valve, N purification gases (such as nitrogen, argon or other inert gases) are introduced into the take-up and release chamber 100, where N is greater than or equal to 2. After the Nth purification gas is introduced, the pressure of the take-up and release chamber 100 is adjusted to a second preset pressure. The pressure difference between the second preset pressure and the pressure in the transmission chamber 300 is within a first preset threshold (such as ±0-10mbar).
[0068] When the pressure of the take-up and release chamber 100 is adjusted to the second preset pressure, the gate valve 90 corresponding to the take-up and release chamber 100 and the transmission chamber 300 is opened to connect the take-up and release chamber 100 and the transmission chamber 300.
[0069] Furthermore, the procedure before step S20 includes:
[0070] The centering component 80 is used to position the center of the tray assembly 20 with multiple substrates;
[0071] Specifically, the centering component 80 centers the tray assembly 20 with a substrate on the carrier component 11. That is, the centering component 80 first centers the tray assembly 20, and then the first positioning point 31, the first sensor 32 and the rotating carrier device 10 position the center-positioned tray assembly 20 to a first position, thereby achieving dual definition of the position of the tray assembly 20 in the pick-and-place cavity 100, further ensuring the position of the tray assembly 20, and thus further improving the alignment accuracy between the support cylinder 40 in the subsequent reaction cavity 200 and the tray assembly 20.
[0072] S30: The robotic arm 70 drives the tray assembly 20 with multiple substrates to move along the axial direction of the support cylinder, and the drive device 50 and the second positioning member 60 adjust the support cylinder 40 in the reaction chamber 200 to the connection and separation position, thereby fixing the tray assembly 20 with multiple substrates to the support cylinder 40, and the side of the tray assembly 20 corresponding to the substrate growth surface faces the bottom side spray device of the reaction chamber 200.
[0073] Specifically, step S30 includes:
[0074] S31: Using the drive device 50 and the second positioning member 60, the support cylinder 40 on the top side of the reaction chamber 200 is adjusted to the second position;
[0075] The drive device 50 in the reaction chamber 200 drives the support cylinder 40 to rotate at a second speed. When the second sensor 62 detects the second positioning point 61, the drive device 50 stops rotating. At this time, the support cylinder 40 is in the second position. At the same time, when the support cylinder 40 is in the second position, the gate valve 90 corresponding to the reaction chamber 200 is opened to connect the reaction chamber 200 with the transfer chamber 300. Then, the manipulator 70 transfers the tray assembly 20 located at the first position into the reaction chamber 200. Here, the system will automatically control the manipulator 70 to transfer the support cylinder 40 with the substrate and tray assembly 20 in the first position into the reaction chamber 200 away from the side of the drive device 50, and the center of the tray assembly 20 is located on the extension line of the central axis of the support cylinder 40.
[0076] S32: The robotic arm 70 drives the tray assembly 20 with multiple substrates to move along the axial direction of the support cylinder, and the drive device 50 adjusts the support cylinder 40 at the second position to the third position, thereby fixing the tray assembly 20 and the support cylinder 40. The side of the tray assembly 20 corresponding to the substrate growth surface faces the spray device at the bottom of the reaction chamber 200.
[0077] Specifically, the robotic arm 70 drives the tray assembly 20 and multiple substrates upward along the axial direction of the support cylinder, so that the connecting portion 23 of the tray assembly 20 completely passes through the notch 43 of the support cylinder 40. A gap exists between the second surface 212 of the main body 21 of the tray assembly 20 and the side of the support cylinder 40 away from the drive device 50. This design prevents the support cylinder 40 from rotating the tray assembly 20 or from rubbing against the second surface 212 of the tray assembly 20 during rotation. "Completely passes through" means that the surface of the connecting portion 23 closest to the second surface 212 in the axial direction is located on the side of the second protrusion 42 of the support cylinder 40 closest to the drive device 50. Next, the driving component in the driving device 50 drives the second rotating shaft 51 to rotate forward by a preset angle so that the support cylinder 40 is in the third position, and during this process, the robot arm 70 and the tray assembly 20 are fixed. Then, the robot arm 70 drives the tray assembly 20 to descend, and the side surface of the connecting part 23 near the second surface 212 in the axial direction overlaps with the side surface of the recessed part 44 near the driving device 50 in the axial direction to fix the tray assembly 20 and the support cylinder 40.
[0078] S40: The drive device 50 drives the support cylinder 40 to rotate and performs epitaxial growth on multiple substrates.
[0079] Specifically, the drive device 50 supports the rotation of the cylinder 40 and the spray device delivers process gas and protective gas into the reaction chamber 200 to enable epitaxial growth of multiple substrates.
[0080] S50: The pallet assembly 20 with multiple substrates is moved axially along the support cylinder 40 by the robot arm 70, and the drive device 50 and the second positioning member 60 adjust the support cylinder 40 to the connection and separation position, thereby realizing the separation of the pallet assembly 20 and the support cylinder 40.
[0081] Specifically, step S50 includes:
[0082] S51: The support cylinder 40 is adjusted to the third position using the drive device 50 and the second positioning member 60;
[0083] Specifically, this step involves separating the tray assembly 20 from the support cylinder 40 after substrate epitaxial growth. First, the support cylinder 40 is adjusted to the second position using the drive device 50, the second sensor 62, and the second positioning point 61. Then, the support cylinder 40 at the second position is rotated forward by a preset angle to place it in the third position. In this step, the second positioning point 61 can not only directly position the second position of the support cylinder 40, but also indirectly position the third position of the support cylinder 40. That is, the third position is positioned with the second position as a reference. This design can further improve the positioning accuracy of the support cylinder 40 in the third position.
[0084] Furthermore, this step also requires simultaneously reducing the temperature inside the reaction chamber 200 to the wafer removal temperature (such as a temperature between 600-900℃, 600℃, 650℃, 700℃, 750℃, 800℃, 850℃, 900℃, etc.) before the valves of the reaction chamber 200 and the transfer chamber 300 can be opened.
[0085] S52: The pallet assembly 20 with multiple substrates is moved axially along the support cylinder 40 by the robot arm 70 and the drive device 50 is adjusted from the third position to the second position to achieve the separation of the pallet assembly 20 and the support cylinder 40.
[0086] Specifically, when the support cylinder 40 is in the third position and the valve of the reaction chamber 200 is open, the robot arm 70 drives the tray assembly 20 to rise, causing the side surface of the connecting part 23 near the second surface 212 in the axial direction to separate from the side surface of the recessed part 44 near the drive device 50 in the axial direction. The side surface of the connecting part 23 near the second surface 212 in the axial direction is located on the side of the second protrusion 42 of the support cylinder 40 near the drive device 50. Then, the drive device 50 is used to rotate the support cylinder 40 in the third position by a preset angle in the opposite direction so that the support cylinder 40 is in the second position. At this time, the connecting part 23 on the tray assembly 20 and the notch 43 of the support cylinder 40 are corresponding in the axial direction. Therefore, as long as the robot arm 70 drives the substrate and the tray assembly 20 to fall, so that the connecting part 23 passes through the notch 43, the complete separation of the tray assembly 20 and the support cylinder 40 can be achieved.
[0087] S60: The separated tray assembly 20 with multiple substrates is transferred to the pick-and-place cavity 100 using the robot arm 70.
[0088] After placing the pick-and-place chamber, the gas in the pick-and-place chamber is purified, and then the cover plate at the opening of the pick-and-place chamber is opened to remove the substrate or substrate and tray assembly 20 after epitaxial reaction.
[0089] In one embodiment, the method further includes the following after step S50:
[0090] The tray assembly 20 (substrate and tray assembly 20) separated from the support cylinder 40 is transported to the buffer cavity 400 for cooling using the robot arm 70;
[0091] When the temperature of the tray assembly 20 in the tray assembly 20 cools down to 200°C, the robot arm 70 transports the substrate and the tray assembly 20 to the outside of the buffer cavity 400 and into the pick-and-place cavity 100.
[0092] Furthermore, the air inside the take-up and release chamber 100 needs to be purified before entering the chamber.
[0093] For example, the vacuum valve can be used to evacuate the take-out chamber 100 to adjust the pressure of the take-out chamber 100 to the first preset pressure (e.g., 1-20 mbar). After the pressure of the take-out chamber 100 reaches the first preset pressure, the vacuum valve is closed.
[0094] The gas is introduced into the take-up and release chamber 100 N times using an inflation valve, where N is greater than or equal to 2. After the Nth introduction of the gas, the pressure of the take-up and release chamber 100 is adjusted to a second preset pressure. The pressure difference between the second preset pressure and the transmission chamber 300 is within a first preset threshold (e.g., ±0-10mbar). This design avoids cracks in the tray assembly 20 during transmission.
[0095] The purification gas used in this step can be nitrogen, argon, or other inert gases.
[0096] When the pressure of the pick-and-place chamber 100 is adjusted to the second preset pressure, the gate valve 90 corresponding to the pick-and-place chamber 100 is opened, so that the robot arm 70 can transport the cooled tray assembly 20 into the pick-and-place chamber 100.
[0097] In one embodiment, the step of opening the opening of the take-up and put-down cavity 100 includes:
[0098] Purified gas is introduced into the take-up and release chamber 100 using an inflation valve to adjust the pressure in the take-up and release chamber 100 to a third preset pressure, and the pressure difference between the third preset pressure and atmospheric pressure is within a second preset threshold (e.g., ±0-10mbar).
[0099] When the pressure inside the pick-and-place cavity 100 is adjusted to the third preset pressure, the openings of the pick-and-place cavity 100 are opened, and the substrate is moved into the substrate box.
[0100] The above embodiments are only for illustrating the technical concept and features of this application, and are intended to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be used to limit the scope of protection of this application. All equivalent changes or modifications made in accordance with the spirit and essence of this application should be included within the scope of protection of this application.
Claims
1. An epitaxial growth apparatus for epitaxial growth, characterized in that, include: The pick-and-place cavity has a rotating support device for carrying a tray assembly. The tray assembly has multiple storage parts for placing substrates. The side of the tray assembly corresponding to the substrate growth surface faces the rotating support device. The pick-and-place cavity is provided with a first positioning element. The rotating support device determines a first position of the tray assembly based on the first positioning element. The reaction chamber includes a spray device located at the bottom side of the reaction chamber and a drive device located at the top side of the reaction chamber. The drive device is connected to a support cylinder located inside the reaction chamber. The support cylinder is used to place a tray assembly, and the growth surface of the substrate on the tray assembly faces the spray device. A second positioning member is provided on the top outer side of the reaction chamber. The drive device determines the connection and separation position of the support cylinder relative to the tray assembly based on the second positioning member. The transfer chamber contains a robotic arm for transferring the tray assembly.
2. The epitaxial growth apparatus as described in claim 1, characterized in that, The tray assembly is provided with a connecting part that connects to the support cylinder, and the support cylinder is provided with a notch for the connecting part to pass through and a recess that matches the connecting part. The connection separation position includes a second position and a third position. The driving device determines the second position based on the second positioning element and determines the third position based on the second position. The orthographic projection of the connecting part in the axial direction of the support cylinder is located within the range of the notch at the second position, and the orthographic projection of the connecting part in the axial direction of the support cylinder is located within the range of the recess at the third position.
3. The epitaxial growth apparatus as described in claim 2, characterized in that, The pallet assembly includes a main body portion, the surface of the main body portion facing the support cylinder having a first protrusion extending axially along the main body portion, and the connecting portion being located at the inner edge of the first protrusion portion and extending radially along the first protrusion portion; The support cylinder includes a main cylinder, the outer surface of the main cylinder facing the tray assembly has a second protrusion extending radially thereon, a notch is provided on the second protrusion and axially penetrates the second protrusion, and a recess is provided on the side of the second protrusion facing the drive device; The storage portion is located on the main body and extends axially through the main body. A third protrusion is formed on the inner side of the storage portion, extending radially therein. The axial thickness of the third protrusion is less than the axial thickness of the main body.
4. The epitaxial growth apparatus as described in claim 3, characterized in that, In the axial direction of the support cylinder, the height of the connecting portion is less than the height of the first protrusion, the depth of the recess is less than the height of the second protrusion, and the distance between the connecting portion and the side of the main body portion away from the substrate growth surface is a first distance, which is greater than the height of the second protrusion. In the radial direction of the support cylinder, the width of the recess is smaller than the width of the second protrusion.
5. The epitaxial growth apparatus as described in claim 3, characterized in that, The number of the connecting parts is multiple, and the multiple connecting parts are evenly distributed along the circumference of the first protrusion. The number of the recessed portion, the notch portion, and the connecting portion are all multiple, and the notch portion and the recessed portion are alternately and evenly distributed along the circumference of the second protrusion.
6. The epitaxial growth apparatus as described in claim 1, characterized in that, The first positioning element includes a first positioning point located on the side of the tray assembly opposite to the substrate growth surface, and a first sensor located on the top side of the pick-and-place cavity. The rotating bearing device determines the first position of the tray assembly based on the first positioning point detected by the first sensor. The second positioning element includes a second positioning point located on the drive device and a second sensor located on the top outer side of the reaction chamber. The drive device determines the connection and separation position of the support cylinder relative to the tray assembly based on the second positioning point detected by the second sensor.
7. The epitaxial growth apparatus as described in claim 1, characterized in that, It also includes a centering component, which includes two clamping parts symmetrically arranged around the circumference of the rotating bearing device and a drive part electrically connected to the corresponding clamping parts.
8. The epitaxial growth apparatus as described in claim 1, characterized in that, The tray assembly can be an integrated structure or a separate structure.
9. An epitaxial growth method, characterized in that, Includes the following steps: Multiple substrates or multiple substrates and a tray assembly are placed on a rotating support device within the pick-and-place cavity, with the side of the tray assembly corresponding to the substrate growth surface facing the rotating support device. Using the rotating bearing device and the first positioning member, the tray assembly with multiple substrates is adjusted to a first position, and the tray assembly with multiple substrates located at the first position is transferred to the reaction chamber using a robotic arm; The robotic arm drives the tray assembly with multiple substrates to move along the axial direction of the support cylinder, and the driving device and the second positioning device rotate the support cylinder in the reaction chamber to the connection and separation position, thereby fixing the tray assembly with multiple substrates to the support cylinder, and the side of the tray assembly corresponding to the substrate growth surface faces the spray device at the bottom of the reaction chamber. The drive device is used to drive the support cylinder to rotate and to perform epitaxial growth on multiple substrates; The tray assembly with multiple substrates is moved axially along the support cylinder by the robotic arm, and the support cylinder is rotated to the connection and separation position by the drive device and the second positioning member, thereby separating the tray assembly from the support cylinder. The robotic arm is used to transfer the separated tray assembly containing multiple substrates to the pick-and-place cavity.
10. The epitaxial growth method as described in claim 9, characterized in that, The step of placing multiple substrates or multiple substrates and tray assembly on the rotary support device within the pick-and-place cavity further includes: The centering component is used to locate the center of the tray assembly with multiple substrates.