Control methods and plasma processing devices

Abstract

Improving the control accuracy of the incident angle of ions incident on the edge region of a substrate. A plasma processing apparatus is provided, comprising: a substrate support disposed within a plasma processing chamber for supporting a substrate; an edge ring disposed around the substrate supported by the substrate support; a lifter for raising and lowering the edge ring; and a control unit that controls the following steps: preparing the substrate at the substrate support; processing the substrate using plasma; measuring the consumption of the edge ring; and controlling the lifter to lower the edge ring based on the consumption of the edge ring.

Description

Technical Field

[0001] This disclosure relates to a control method and a plasma processing apparatus. Background Technology

[0002] For example, Patent Document 1 proposes a method that adjusts the height of the sheath by independently driving multiple lifting pins in the vertical direction and controlling the circumferential tilt of the edge ring. This eliminates deviations in the etching rate and maintains the etched shape of the recess as vertical.

[0003] Furthermore, Patent Document 2 proposes using a sheath adjuster to move the second annular portion upwards based on the wear of the edge ring, so that the vertical position of the upper surface of the second annular portion aligns with the vertical position of the upper surface of the substrate on the electrostatic chuck. This adjusts the vertical position of the upper end of the sheath above the edge ring, and reduces the difference between the etching rate at the edge of the substrate and the etching rate of the substrate further inward than the edge.

[0004] Furthermore, Patent Document 3 proposes moving the edge ring from a first position to a second position higher than the first position based on the wear of the edge ring, so that the edge ring is parallel to the sheath on the substrate. Additionally, Patent Document 4 proposes a movable edge ring that reduces capacitance variations in the substrate processing system.

[0005] <Prior art documents>

[0006] <Patent Documents>

[0007] Patent Document 1: Japanese Patent Application Publication No. 2019-201085

[0008] Patent Document 2: Japanese Patent Application Publication No. 2020-113753

[0009] Patent Document 3: US Patent No. 11393710 Specification

[0010] Patent Document 4: International Publication No. 2021 / 026110 Summary of the Invention

[0011] <Problem to be solved by this invention>

[0012] This disclosure provides a control method and a plasma processing apparatus that improves the control accuracy of the incident angle of ions incident on the edge region of a substrate.

[0013] <Methods for solving problems>

[0014] According to one aspect of this disclosure, a plasma processing apparatus is provided, comprising: a substrate support disposed within a plasma processing chamber for supporting a substrate; an edge ring disposed around the substrate supported by the substrate support; a lifter for lifting the edge ring; and a control unit that controls the following steps: preparing the substrate at the substrate support and processing the substrate using plasma; measuring the consumption of the edge ring; and controlling the lifter to lower the edge ring based on the consumption of the edge ring.

[0015] <The Effects of the Invention>

[0016] One aspect is that it can improve the control accuracy of the incident angle of ions incident on the edge region of the substrate. Attached Figure Description

[0017] [ Figure 1 [Illustration 1] is a diagram illustrating an example of a plasma processing system according to one embodiment.

[0018] [ Figure 2A [ ] is a graph used to illustrate the relationship between the incident angle of an ion and the frequency of the bias RF power for an example of the action of the edge ring.

[0019] [ Figure 2B [ ] is a graph used to illustrate the relationship between the incident angle of an ion and the frequency of the bias RF power for an example of the action of the edge ring.

[0020] [ Figure 2C [ ] is a graph used to illustrate the relationship between the incident angle of an ion and the frequency of the bias RF power for an example of the action of the edge ring.

[0021] [ Figure 2D [ ] is a graph used to illustrate the relationship between the incident angle of an ion and the frequency of the bias RF power for an example of the action of the edge ring.

[0022] [ Figure 3A [ ] is a diagram used to illustrate the relationship between the incident angle of an ion and the shape of the edge ring, based on an example of the action of the edge ring.

[0023] [ Figure 3B [ ] is a diagram used to illustrate the relationship between the incident angle of an ion and the shape of the edge ring, based on an example of the action of the edge ring.

[0024] [ Figure 4 [ ] is a flowchart illustrating an example of a control method for an edge ring according to one implementation.

[0025] [ Figure 5A [Illustration] is a diagram used to illustrate a control method for an edge ring according to one embodiment.

[0026] [ Figure 5B [Illustration] is a diagram used to illustrate a control method for an edge ring according to one embodiment.

[0027] [ Figure 6A [Figure 1] is a diagram illustrating an example of experimental results for an edge loop control method according to one embodiment.

[0028] [ Figure 6B [Figure 1] is a diagram illustrating an example of experimental results for an edge loop control method according to one embodiment.

[0029] [ Figure 6C [Figure 1] is a diagram illustrating an example of experimental results for an edge loop control method according to one embodiment.

[0030] [ Figure 6D [Figure 1] is a diagram illustrating an example of experimental results for an edge loop control method according to one embodiment. Detailed Implementation

[0031] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used for the same components, and sometimes repeated descriptions are omitted.

[0032] [Plasma Processing System]

[0033] The following describes a structural example of a plasma processing system. Figure 1 This is a diagram used to illustrate a structural example of an inductively coupled plasma processing device.

[0034] The plasma processing system includes an inductively coupled plasma processing device 1 and a control unit 2. The inductively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, an exhaust system 40, and a lift 50. The plasma processing chamber 10 includes a dielectric window. Additionally, the plasma processing device 1 includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded.

[0035] The substrate support portion 11 includes a main body portion 111. The main body portion 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting a ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111. The ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as an annular support surface for supporting the ring assembly 112.

[0036] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. It should be noted that other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or it may be disposed on both the electrostatic chuck 1111 and the annular insulating component. Additionally, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32, described later, can be arranged within the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a bias electrode. It should be noted that the conductive components of the base 1110 and the at least one RF / DC electrode can also function as multiple bias electrodes. Furthermore, the electrostatic electrode 1111b can also function as a bias electrode. Therefore, the substrate support portion 11 includes at least one bias electrode.

[0037] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0038] In one embodiment, the ring assembly 112 includes a first ring 112a capable of being raised and lowered, a second ring 112b supporting the first ring 112a, and a cover ring 113 (see reference). Figure 5A ,5B The first ring 112a is disposed in a recess formed in the second ring 112b and can be raised and lowered. As the first ring 112a is raised and lowered, the gap (D) between the bottom surface 112b1 of the recess formed in the second ring 112b and the first ring 112a changes. The first ring 112a is supported by the second ring 112b, and the inner circumferential surface of the first ring 112a surrounds the periphery of the substrate W. The outer circumferential surface of the first ring 112a is covered by the second ring 112b.

[0039] The first ring 112a and the second ring 112b can be formed of SiC, Si, or quartz. The cover ring 113 can be formed of quartz. In this specification, the first ring 112a and the second ring 112b are collectively referred to as the edge ring. The edge ring is also called the focusing ring. However, the edge ring may not be divided into the first ring 112a and the second ring 112b, or it may be formed as a single piece. In addition, the edge ring may be divided into three or more parts.

[0040] Return to Figure 1 The lifting device 50 causes the first ring 112a to rise and fall. The lifting device 50 includes multiple support pins 51 and an actuator 52. Figure 1 Although two support pins 51 are shown, there are actually more than three support pins 51. Each support pin 51 is formed in a cylindrical shape (solid). Each support pin 51 is inserted into a through hole formed in the base 1110, a through hole formed in the electrostatic chuck 1111, and a through hole formed in the second ring 112b, so that it can protrude or sink into the bottom surface 112b1 of the recess of the second ring 112b (see reference). Figure 5A , 5B ).

[0041] In the case of an integral edge ring, each support pin 51 is inserted into a through hole formed on the base 1110 and a through hole formed on the electrostatic chuck 1111, thereby being able to protrude or be submerged relative to the ring support surface of the electrostatic chuck 1111.

[0042] Actuator 52 causes multiple support pins 51 to rise and fall. Actuator 52 can be, for example, a DC motor, a stepper motor, a linear motor, a pneumatic drive mechanism such as a cylinder, a piezoelectric actuator, etc. As will be described later, lifter 50 lowers multiple support pins 51 according to the amount of wear on the first ring 112a.

[0043] Additionally, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0044] The gas inlet is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a central gas injector (CGI) 13. The central gas injector 13 is disposed above the substrate support 11 and mounted on a central opening formed in the dielectric window 101. The central gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas flow path 13b and then through the gas inlet 13c. It should be noted that the gas inlet may further include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 102, or may replace the central gas injector 13 by including the one or more side gas injectors.

[0045] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to a gas inlet via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsed flow of the at least one process gas.

[0046] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF (Radio Frequency) signal (RF power) to at least one bias electrode and antenna 14. This generates plasma from at least one processing gas supplied to the plasma processing space 10. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one bias electrode, a bias potential can be generated on the substrate W, introducing ions from the formed plasma into the substrate W.

[0047] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a (source RF power supply) is coupled to the antenna 14 and is configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. However, the source RF signal (source RF power) preferably has a frequency of 13 MHz or higher. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0048] The second RF generation unit 31b (bias RF power supply) is coupled to at least one bias electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to less than 13 MHz. However, the bias RF signal (bias RF power) preferably has a frequency less than 13 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0049] Alternatively, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and is configured to generate a bias DC signal. The generated bias DC signal is applied to at least one bias electrode.

[0050] In various embodiments, the bias DC signal can also be pulsed. In this case, a voltage pulse sequence is applied to at least one bias electrode. The voltage pulse can have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the bias DC generation unit 32a and at least one bias electrode. Therefore, the bias DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. The voltage pulse can have positive or negative polarity. In addition, the voltage pulse sequence can also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. It should be noted that the bias DC generation unit 32a can be provided in addition to the RF power supply 31, or the bias DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0051] Antenna 14 includes one or more coils. In one embodiment, antenna 14 may also include an outer coil and an inner coil arranged coaxially. In this case, RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generating unit may be connected to both the outer coil and the inner coil, and additional RF generating units may be connected to the outer coil and the inner coil separately.

[0052] The exhaust system 40 may, for example, be connected to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure regulating valve is used to regulate the pressure within the plasma processing space 10s. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination thereof.

[0053] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control the various elements of the plasma processing apparatus 1 in a manner that performs the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may also include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and perform various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0054] [Angle of incidence of ions]

[0055] The edge rings (first ring 112a, second ring 112b) are consumed by plasma exposure during the processing of substrate W, resulting in a thinning of the rings. Due to this consumption, the potential of the edge rings decreases, and the height of the sheath above the edge rings becomes lower than the height of the sheath above substrate W. Consequently, due to this height difference, the incident angle of ions in the edge region of substrate W tilts inward relative to the vertical direction of substrate W in the radial direction (inner direction). It should be noted that the edge region of substrate W is the outermost peripheral region of substrate W; for example, it extends radially from the center of substrate W to approximately 147 mm to 150 mm (the outer peripheral end of substrate W).

[0056] By raising the height of the edge ring to increase the height of the sheath on the edge ring by the amount that the height of the sheath decreases due to the consumption of the edge ring, it is possible to control the angle of incidence of inwardly tilted ions to be tilted further outward. Thus, by eliminating the tilt of the ion's angle of incidence, ions are incident in a direction perpendicular to the substrate W, thereby enabling the etched shape to be vertical.

[0057] Figures 2A-2D This is a graph used to illustrate the relationship between the incident angle of an ion and the frequency of the bias RF power, based on an example of the action of an edge ring. For example, in Figure 2A and Figure 2B In this process, based on the consumption of the edge ring, the height of the sheath S above the first ring 112a is increased by raising the first ring 112a. Thus, as... Figure 2B As indicated by the arrow, control is performed to tilt the incident angle of ions in the edge region of substrate W further outward (in the external direction). It should be noted that the second ring 112b is fixed in this specification.

[0058] exist Figure 2A and Figure 2B In the example, bias RF power with a frequency of 13 MHz is supplied to the substrate support 11 (base 1110). In contrast, in Figure 2C and Figure 2D In the example, bias RF power with a frequency of 400 kHz is supplied to the substrate support 11 (base 1110). Figure 2A and Figure 2C In the middle, the first ring 112a is in the initial state of not being consumed, and the first ring 112a is placed in the lowest position. Figure 2B and Figure 2D The first ring 112a is raised to the same height by the support pin 51.

[0059] A gap D exists between the first ring 112a and the second ring 112b, preventing them from contacting each other. The gap D is formed by the raising and lowering of the first ring 112a, creating a void between its bottom surface (lower surface 112a1), inner circumferential surface 112a2, outer circumferential surface 112a3, and the inner surface (bottom surface 112b1, inner surface 112b2, outer surface 112b3) of the recess formed on the second ring 112b. This avoids abrupt changes in the potential of the first ring 112a due to contact between the first ring 112a and the second ring 112b, and also prevents any impact on the controllability (precision) of the ion incident angle.

[0060] The impedance generated by gap D to the RF current varies with frequency. When RF power at a frequency of 400 kHz is supplied, the impedance generated by gap D increases compared to when RF power at a frequency of 13 MHz is supplied. Therefore, the potential of the first ring 112a decreases relative to the potential of the second ring 112b. Furthermore, the larger the gap D, the lower the potential of the first ring 112a. Therefore, when bias RF power at 400 kHz is supplied, the change in potential of the first ring 112a during its raising and lowering is larger compared to when bias RF power at 13 MHz is supplied. Since the gap D increases as the first ring 112a is raised, the potential of the first ring 112a is even lower. The greater the potential difference between the plasma and the first ring 112a, the thicker the sheath. Thus, when the plasma is considered grounded, the lower the potential of the first ring 112a, the smaller the potential difference between the plasma and the first ring 112a, and the thinner the sheath. Therefore, the more the first ring 112a is raised, the more the sheath sinks above the first ring 112a, and the more the ions are incident inward (inward direction).

[0061] For example, in Figure 2A In this configuration, the potential of the second ring 112b is set to a "high" level. When a 13MHz bias RF power is supplied, the potential difference between the first ring 112a and the second ring 112b is very small due to the small impedance generated by the gap D. Figure 2A In the circuit, the potential of the first ring 112a is at a "high" level. When the first ring 112a is raised, the gap D increases, but under the high-frequency bias RF power of around 13MHz, the change in potential of the first ring 112a is relatively small. Figure 2B The potential of the first ring 112a is "high". Therefore, in Figure 2B In the state of, with Figure 2A In the initial state, the potential difference between the plasma and the first ring 112a is also large. As mentioned above, the thickness of the sheath is determined by the potential difference between the plasma and the edge ring; the greater the potential difference between the plasma and the edge ring, the thicker the sheath. Therefore, when a 13MHz bias RF power is supplied, the thickness of the sheath hardly changes with the rise and fall of the first ring 112a, and the height of the sheath increases according to the height of the first ring 112a (the height position of the upper surface of the first ring 112a). Therefore, when a 13MHz bias RF power is supplied, as... Figure 2B As indicated by the arrow, the more the first ring 112a is raised, the more the ions are incident at an outward tilt in the edge region of the substrate W.

[0062] In contrast, when a bias RF power of 400kHz is supplied, the impedance caused by the gap D is relatively large. Therefore, if in Figure 2CIf the potential of the second ring 112b is set to "high" in the initial state, the potential of the first ring 112a will drop to "medium" for example. If the first ring 112a is raised, the impedance caused by the gap D will increase further. Since the potential change of the first ring 112a is large, the potential of the first ring 112a will decrease further when the first ring 112a is raised. Figure 2D The potential of the first ring 112a shown becomes, for example, a "low" level.

[0063] Therefore, when the plasma is considered grounded, the higher the first ring 112a rises, the smaller the potential difference between the plasma and the first ring 112a, and the thinner the sheath becomes. That is, as a result of raising the first ring 112a, since the reduction in the thickness of the sheath directly above the first ring 112a is greater than the increase in the height of the upper surface of the first ring 112a, the height position of the sheath S directly above the first ring 112a becomes lower. Therefore, when a 400kHz bias RF power is supplied, the higher the first ring 112a is raised, the smaller the potential difference between the plasma and the first ring 112a, and the thinner the sheath becomes. Figure 2D As shown by the arrow, ions are incident at an angle towards the inside in the edge region of substrate W.

[0064] Therefore, when a bias RF power of 400 kHz is supplied, in order to raise the first ring 112a and control the incident angle of the ions to be further outward, there is a method that, before and after raising, makes the potentials of the first ring 112a and the second ring 112b the same or the potential difference smaller.

[0065] Figure 3A , Figure 3B This diagram illustrates the relationship between the ion incident angle and the shape of the edge ring, based on an example of the operation of the edge ring. With a bias RF power supply of 400 kHz, the shape of the second ring 112b is optimized to keep the capacitance between the first ring 112a and the second ring 112b' constant. Thus, before and after lifting, the first ring 112a and the second ring 112b are brought to the same potential or their potential difference is reduced. The more the first ring 112a is lifted, the more the ions are incident at an outward tilt, and the ion incident angle can be controlled by the rise of the first ring 112a. However, in this case, the shape of the second ring 112b' needs to be machined into a special shape to keep the capacitance between the first ring 112a and the second ring 112b' constant, resulting in an increase in the number of components and a more complex edge ring structure.

[0066] Furthermore, for deep hole etching, it is important to obtain a high-speed and vertical etching shape in the edge region of the substrate W. In other words, it is important to control the ion incident angle to be vertical in the edge region and to use ions with high ion energy to perform etching at a high etching rate. For example, when the vertical direction of the substrate W is set to 90 degrees, it is preferable that the ion incident angle is within a radial range of less than ±0.2 degrees, that is, controlled within the range of 89.8 degrees to 90.2 degrees.

[0067] Compared to RF power at a frequency of 13MHz, low-frequency RF power at frequencies such as 400kHz can utilize higher ion energy for etching and can perform high-speed and vertical etching of deep holes.

[0068] However, in plasma etching using low-frequency RF power such as 400kHz, the edge rings are consumed more quickly, and the incident angle of ions at the edge region of the substrate W tends to tilt inward. Furthermore, the lifespan of the edge rings is shortened, making it easier to reduce the replacement cycle.

[0069] Therefore, in one embodiment of the edge ring, the edge ring is divided into two parts in the vertical direction. The upper edge ring, i.e., the first ring 112a arranged around the substrate W, is driven in the vertical direction using a lifter 50. The lower edge ring, i.e., the second ring 112b, is fixed. Thus, compared to the consumption of edge rings in plasma etching using low-frequency RF power such as 400kHz, by replacing only the first ring 112a, cost reduction can be achieved.

[0070] [Control methods for edge loops]

[0071] In one embodiment of the edge ring control method, when bias RF power with a frequency of 13 MHz or higher is supplied to the substrate support 11, the first ring 112a is tilted inward relative to the ion incident angle based on the consumption of the first ring 112a, and the control is performed to lift the first ring 112a. Thus, it is possible to control the tilt of the ion incident angle from an inward state to a more outward state (see reference). Figure 2B This extends the replacement cycle of the edge ring. It should be noted that when supplying bias RF power at a frequency of 13MHz or higher to the substrate support 11, such as... Figure 2A As shown, the initial position of the first ring 112a is the lowest position of the first ring 112a.

[0072] On the other hand, when bias RF power is supplied at a frequency of 400 kHz, when the first ring 112a is raised based on the consumption of the first ring 112a to tilt inward relative to the ion incident angle, the ion incident angle tilts inward (see reference). Figure 2D Therefore, it is impossible to control the incident angle of the ions to be approximately perpendicular.

[0073] Therefore, in the edge ring control method according to one embodiment, when a bias RF power with a supply frequency of 400 kHz is provided, the first ring 112a is controlled to descend in a way that tilts inward relative to the ion incident angle, based on the consumption of the first ring 112a. This allows control to change the ion incident angle from an inward tilt to a more outward tilt. Therefore, by controlling the descent position of the first ring 112a, the ion incident angle can be controlled to be approximately vertical. This extends the edge ring replacement cycle.

[0074] The following is for reference Figure 4 as well as Figure 5A , 5B The control method for the edge rings divided into the first ring 112a and the second ring 112b is described. Figure 4 This is a flowchart illustrating an example of an edge ring control method according to one embodiment when bias RF power at a frequency of 400 kHz is supplied to the substrate support 11. Figure 5A and Figure 5B This diagram illustrates a control method for an edge loop according to one embodiment when bias RF power at a frequency of 400 kHz is supplied to the substrate support 11. It should be noted that when bias RF power at a frequency of 13 MHz or higher is supplied to the substrate support 11, as... Figure 2A As shown in (b), the control unit 2 controls the lifting of the edge ring based on the consumption of the first ring 112a.

[0075] according to Figure 4 The edge ring control method of the illustrated embodiment is controlled by the control unit 2 and executed by the plasma processing apparatus 1. In the plasma processing apparatus 1, during plasma processing of the substrate W, the first ring 112a is exposed to plasma and consumed. The first ring 112a is positioned at a predetermined height (initial position) from the surface opposite to the first ring 112a. Figure 5A As shown, in the initial state, the first ring 112a is raised to its highest position by the support pin 51. In other words, the initial position of the first ring 112a is set such that the incident angle of ions in the edge region of the substrate W is controlled to be approximately perpendicular to the highest position of the first ring 112a. In the edge ring control method according to one embodiment, the descent of the first ring 112a begins from this initial position. It should be noted that the face opposite to the first ring 112a is... Figure 5A , 5BThe bottom surface 112b1 of the recess of the second ring 112b is shown. When the edge ring is not divided, the surface opposite the edge ring is the ring support surface of the electrostatic chuck 1111.

[0076] When this process begins, in step S1, the control unit 2 measures the consumption of the first ring 112a. During the processing of the substrate W, the first ring 112a is consumed due to plasma. The control unit 2 can measure the consumption of the first ring 112a directly or indirectly. As an example of the measurement method, the control unit 2 can illuminate light along the thickness direction of the first ring 112a and measure the thickness of the first ring 112a based on the interference light between the first reflected light reflected from the surface of the first ring 112a and the second reflected light reflected from the back surface of the first ring 112a. The consumption of the first ring 112a can be calculated based on the measurement result. In this case, the control unit 2 can measure the consumption of the first ring 112a each time a predetermined number of substrates W are processed. It should be noted that the method for measuring the thickness of the first ring 112a is not limited to the above method, and any known method can be used.

[0077] Alternatively, instead of directly measuring the consumption of the first ring 112a, a first relevant information can be obtained through pre-measurement between the pre-measured consumption or thickness of the first ring 112a and the supply time of the source RF power, which represents the time the first ring 112a is exposed to plasma, and stored in the storage unit 2a2. In this case, in step S1, the control unit 2 can refer to the first relevant information stored in the storage unit 2a2 and calculate the consumption of the first ring 112a based on the total supply time of the source RF power since the first ring 112a was reset or replaced. However, the method for measuring the consumption of the first ring 112a is not limited to this.

[0078] Next, in step S2, the control unit 2 lowers the first ring 112a based on the amount consumed. In this process, the lowering position of the first ring 112a is controlled based on the amount consumed, in a manner that the incident angle of the ions in the plasma incident on the edge region of the substrate W is approximately perpendicular.

[0079] For example, the control unit 2 can obtain, in advance, the consumption amount of the first ring 112a, the height of the bottom surface 112b1 of the concave portion of the second ring 112b opposite to the first ring 112a, and the second relevant information between these and the ion incident angle, and store this information in the storage unit 2a2. Furthermore, in step S2, the control unit 2 can, with reference to the storage unit 2a2 and based on the second relevant information, control the descent position of the first ring 112a based on the consumption amount of the first ring 112a in a manner that keeps the ion incident angle approximately perpendicular.

[0080] In step S2, the more the first ring 112a is consumed, the more the control unit 2 lowers the first ring 112a. By gradually lowering the first ring 112a based on its consumption, especially when the ion incident angle is tilted further inward, the control unit can change the tilt of the ion incident angle from inward to outward. Therefore, by controlling the lowering position of the first ring 112a, the ion incident angle can be controlled to be approximately vertical. This extends the replacement cycle of the edge ring.

[0081] When supplying a bias RF power of 400 kHz, for example, compared to supplying a bias RF power of 13 MHz, the impedance caused by the gap D is larger. Therefore, relative to Figure 5A The initial potential of the first ring 112a is such that when the potential of the first ring 112a is decreased, the change in potential of the first ring 112a increases, and the gap D narrows, resulting in a decrease in impedance. Therefore, the potential of the first ring 112a is related to... Figure 5A The potential at the initial position increases compared to the initial position.

[0082] The thickness of the sheath is determined by the potential difference between the plasma and the edge ring; the greater the potential difference between the plasma and the edge ring, the thicker the sheath. Therefore, when the plasma is considered grounded, the first ring 112a... Figure 5A Towards Figure 5B The greater the descent, the greater the potential difference between the plasma and the first ring 112a, and the thicker the sheath. That is, as a result of the descent of the first ring 112a, the increase in the thickness of the sheath directly above the first ring 112a is greater than the decrease in the upper surface of the first ring 112a, thus the height of the sheath directly above the first ring 112a increases. Therefore, when a bias RF power of 400 kHz is supplied, such as Figure 5B As the arrow indicates, the incident ions can be directed further outward (outer direction) as the first ring 112a descends.

[0083] If the first ring 112a is consumed, the sheath S directly above it descends. As the sheath S descends, the ion's incident angle tilts inward. At this time, the first ring 112a is descended to a height corresponding to the amount of its consumption. This raises the sheath S, controlling the ion's incident angle to point further outward. Thus, the ion's incident angle can be controlled to be approximately vertical by adjusting the descending position of the first ring 112a. With this control, even when supplied with bias RF power at a frequency of 400 kHz, the ion's incident angle can be controlled to be approximately vertical.

[0084] It should be noted that in step S2, the control unit 2 lowers the first ring 112a while controlling it to prevent the first ring 112a from contacting the second ring 112b. Then, the lowering of the first ring 112a ends before it contacts the bottom surface 112b1 of the recess of the second ring 112b. This avoids a sharp change in the potential of the first ring 112a due to contact with the second ring 112b, thus preventing a decrease in the controllability (control precision) of the ion incident angle. However, if the first ring 112a is formed of a dielectric such as quartz, contact between the first ring 112a and the second ring 112b is permissible.

[0085] Next, in step S3, the control unit 2 determines whether the consumption of the first ring 112a has reached a preset limit value. When the control unit 2 determines that the consumption of the first ring 112a has not reached the above limit value, it returns to step S1 and executes steps S1 and S2, causing the first ring 112a to decrease based on the consumption of the first ring 112a.

[0086] When the control unit 2 determines in step S3 that the consumption of the first ring 112a has reached the limit value, it proceeds to step S4 to replace the first ring 112a and end the process. It should be noted that the limit value is determined in advance through measurement. For example, the limit value can be determined by measuring the minimum thickness of the first ring 112a that allows the ion incident angle to be controlled to approximately perpendicular when the first ring 112a is lowered.

[0087] [Example of Experimental Results]

[0088] When the plasma processing apparatus 1 supplies source RF power to the antenna 14 and bias RF power to the substrate support 11 (base 1110), the controllability of the ion incident angle is compared between controlling the first ring 112a to rise and controlling the first ring 112a to fall. In the control that raises the first ring 112a, bias RF power with a frequency of 13 MHz is supplied to the base 1110. In the control that lowers the first ring 112a, bias RF power with a frequency of 400 kHz is supplied to the base 1110.

[0089] It should be noted that in controlling the rise of the first ring, an experiment was conducted to perform the same action as the lifting and lowering of the first ring by changing the thickness E of the first ring 112a'. Figure 6AAs shown, the driving amount F of the first ring 112a' is defined as 0 when the thickness E of the first ring 112a' is set to 2.2 mm (in other words, the first ring 112a' does not rise). Furthermore, when the thickness E of the first ring 112a' is set to 2.7 mm and 3.2 mm, the driving amount F of the first ring 112a' is defined as +0.5 and +1.0, respectively. Additionally, when the thickness E of the first ring 112a' is set to 1.7 mm, the driving amount F of the first ring 112a' is defined as -0.5. Furthermore, control is performed by varying the thickness E of the first ring 112a' to 1.7 mm, 2.2 mm, 2.7 mm, and 3.2 mm, thereby using the thickness of the first ring 112a' to raise or lower its height.

[0090] In the control that causes the first ring to descend, such as Figure 6B As shown, the thickness E of the first ring 112a is to be set to two different values: 3.2 mm and 2.7 mm. The support pin 51 is used to raise and lower the first ring 112a of each thickness, so that the driving amount F varies in units of 0.5 mm.

[0091] Figure 6C and Figure 6D A plus sign indicates that the ion incident angle (tilting, tilt) is tilted to the outside, and a minus sign indicates that the ion incident angle is tilted to the inside. Figure 6D The horizontal axis represents the driving force of the first rings 112a' and 112a, and the vertical axis represents the ion incident angle.

[0092] When the driving amount F is 0 mm (thickness 2.2 mm), the ion incident angle in the first ring 112a with a thickness of 3.2 mm tilts outward (outer direction) by 1.86 degrees. When the driving amount F is 1 mm (thickness 3.2 mm), the ion incident angle in the first ring 112a with a thickness of 3.2 mm tilts inward (inner direction) by -0.91 degrees. This result shows that in the first ring 112a with a thickness of 3.2 mm, when the first ring 112a is raised, the ion incident angle is controlled to change from the outer direction to the inner direction.

[0093] Similarly, it can be seen that in the first ring 112a with a thickness of 2.7 mm, when the first ring 112a is raised, the ion incident angle is controlled to change from the external direction to the internal direction. In other words, in the first ring 112a with thicknesses of 3.2 mm and 2.7 mm, when the first ring 112a is lowered, the ion incident angle is controlled to change from the internal direction to the external direction.

[0094] Next, in the first ring 112a with a thickness of 3.2 mm, the sensitivity of the tilt (ion incident angle) when the driving amount F changes from 0 mm to 1 mm is 2.77 degrees (degrees / mm), and the ion incident angle becomes the internal direction.

[0095] On the other hand, in the first ring 112a with a thickness of 2.7 mm, the sensitivity of the tilt (ion incident angle) when the driving amount F changes from 0 mm to 1 mm is 2.19 degrees (degrees / mm), and the ion incident angle becomes the inward direction. In other words, it can be seen that in the first ring 112a with thicknesses of 3.2 mm and 2.7 mm, when the first ring 112a is lowered with the same driving amount, the thicker the first ring 112a, the higher the sensitivity of the tilt (ion incident angle).

[0096] The distance from the first ring 112a to the plasma is related to the driving force of the first ring 112a and the thickness of the first ring 112a. The thicker the first ring 112a, the higher the sheath S is pushed. Therefore, it is believed that the greater the thickness of the first ring 112a, the larger the controllable angle and the higher the sensitivity, that is, the higher the controllability of the ion incident angle.

[0097] It should be noted that when... Figure 6A When the thickness of the first ring 112a' is increased, if the driving amount F changes from 0 mm to 1 mm (actually increasing the thickness of the first ring 112a' from 2.2 mm to 3.2 mm), the ion incident angle becomes 1.69 degrees in the outward direction. Furthermore, when the thickness of the first ring 112a' is increased from 1.7 mm to 3.2 mm, the sensitivity of the ion incident angle is 1.402 (degrees / mm). These experimental results show that the sensitivity of the ion incident angle is higher when the thickness of the first ring 112a' decreases compared to when it increases.

[0098] In addition, such as Figure 6D As shown, when the first ring 112a is lowered, lines B and C, representing the ion incident angle (tilt) when the first ring 112a with thicknesses of 3.2 mm and 2.7 mm is lowered, can control the ion incident angle to change from an internal direction to an external direction. It should be noted that when "the first ring 112a is lowered," the ion incident angle is... Figure 6D The driving force of the first ring 112a on the horizontal axis changes from the positive state to the 0 state.

[0099] Conversely, when the first ring 112a' is raised, line A, representing the ion incident angle (tilt) when the first ring 112a' is raised, can control the ion incident angle to change from an internal direction to an external direction. It should be noted that when "raising the first ring 112a'", the line A represents the ion incident angle. Figure 6D The driving force of the first ring 112a' on the horizontal axis changes from a state of 0 to a positive state.

[0100] [Example of the effect]

[0101] In the edge ring control method according to this embodiment, the initial position of the first ring 112a is raised to a predetermined height, and the first ring 112a is lowered according to the consumption of the first ring 112a. Therefore, in low-frequency processes using bias RF power with a frequency less than 13MHz, the ion incident angle into the edge region can be controlled more sensitively with the same component structure as in high-frequency processes using bias RF power with a frequency of 13MHz or higher.

[0102] Furthermore, it enables structural simplification and component reduction when controlling the ion incident angle in low-frequency processes. Additionally, by pre-adjusting the thickness of the lifting ring within the edge ring to be thicker, the ion incident angle can be controlled to be vertical, thereby obtaining a vertical etching shape in the edge region of the substrate W. Moreover, the lifting ring can withstand wear and tear caused by plasma etching for extended periods, thus extending its replacement cycle. The thickness of the lifting ring can be greater than the height of the upper surface of the substrate W, and with the lifter 50's drive amount at 0 mm, the ion incident angle can be slightly tilted outwards.

[0103] The above-disclosed embodiments include, for example, the following aspects.

[0104] (Postscript 1)

[0105] A plasma processing device comprising:

[0106] The substrate support is arranged in the plasma processing chamber to support the substrate;

[0107] An edge ring is arranged around the substrate supported by the substrate support portion;

[0108] The lifting device raises and lowers the edge ring; and

[0109] Control Department

[0110] The control unit controls the following processes:

[0111] The process of preparing a substrate at the substrate support and treating the substrate with plasma;

[0112] The process of measuring the consumption of the edge ring; and

[0113] The process of controlling the elevator by lowering the edge ring based on the amount of consumption of the edge ring.

[0114] (Postscript 2)

[0115] The plasma processing apparatus according to Appendix 1 further comprises:

[0116] A bias RF power supply supplies bias RF power with a frequency of less than 13MHz to the substrate support.

[0117] (Note 3)

[0118] The plasma processing apparatus according to Appendix 1 or 2 further comprises:

[0119] The source RF power supply supplies source RF power with a frequency of 13MHz or higher to the antenna, upper electrode, or substrate support arranged on or above the plasma processing chamber.

[0120] (Note 4)

[0121] The plasma processing apparatus according to any one of Appendices 1 to 3, wherein,

[0122] The control unit controls the edge ring to descend based on the amount of consumption of the edge ring, such that the incident angle of ions incident on the edge region of the substrate is approximately perpendicular.

[0123] (Note 5)

[0124] The plasma processing apparatus according to any one of Appendices 1 to 4, wherein,

[0125] The control unit controls the descent of the edge ring from its initial position, where it has been raised to a predetermined height.

[0126] (Note 6)

[0127] According to the plasma processing apparatus described in Appendix 5, wherein...

[0128] The initial position of the edge ring is the height of the highest position of the edge ring, which is approximately perpendicular to the incident angle of ions incident on the edge region of the substrate when the edge ring is not consumed.

[0129] (Note 7)

[0130] The plasma processing apparatus according to any one of Appendices 1 to 6, wherein,

[0131] The control unit controls the process of measuring and storing information about the consumption of the edge ring, the height at which the edge ring is raised, and the incident angle of ions incident on the edge region of the substrate, which is obtained in advance, in the storage unit.

[0132] Control is performed with reference to the storage unit, thereby causing the edge ring to descend based on the consumption of the edge ring in a manner that makes the incident angle of the ions approximately perpendicular, based on the relevant information.

[0133] (Postscript 8)

[0134] The plasma processing apparatus according to any one of Appendices 1 to 7, wherein,

[0135] The edge ring has a first ring that surrounds the substrate and is capable of being raised and lowered, and a second ring that supports the first ring.

[0136] The control unit performs control to reduce the first ring based on the consumption of the first ring.

[0137] (Note 9)

[0138] According to the plasma processing apparatus described in Appendix 8, wherein...

[0139] The control unit controls the process of determining whether the consumption of the first ring has reached a preset limit value.

[0140] Control is implemented so that, if it is determined that the consumption of the first ring has not reached the limit value, the first ring is decelerated based on its consumption.

[0141] If it is determined that the consumption of the first ring has reached the limit, the first ring shall be replaced.

[0142] (Postscript 10)

[0143] According to the plasma processing apparatus described in Appendix 8 or 9, wherein...

[0144] The control unit performs control to lower the first ring while preventing it from contacting the second ring.

[0145] (Postscript 11)

[0146] The plasma processing apparatus according to any one of Appendices 8 to 10, wherein,

[0147] The control unit controls the descent of the edge ring to end before the first ring contacts the bottom surface of the concave portion of the second ring opposite to the first ring.

[0148] (Postscript 12)

[0149] According to the plasma processing apparatus described in Appendix 2, wherein,

[0150] The substrate support portion has a base, a substrate support surface disposed on the base and supporting the substrate, and an electrostatic chuck having a ring support surface for mounting the edge ring.

[0151] The bias RF power is supplied to the base.

[0152] (Postscript 13)

[0153] A control method, the control method being an edge loop control method executed in a plasma processing apparatus, the plasma processing apparatus comprising:

[0154] The substrate support is arranged in the plasma processing chamber to support the substrate;

[0155] An edge ring is arranged around the substrate supported by the substrate support portion; and

[0156] The lifting device raises and lowers the edge ring.

[0157] The control method comprises the following steps:

[0158] The process of measuring the consumption of the edge ring; and

[0159] The process of lowering the edge ring based on the amount of consumption of the edge ring using the lifting device.

[0160] It should be noted that the present invention is not limited to the solutions listed in the above embodiments or combinations of other elements shown herein. Modifications can be made to these aspects without departing from the spirit of the invention, and appropriate provisions can be made according to their application. Furthermore, regarding the matters described in the various embodiments, other solutions can be adopted or combinations can be made without contradiction.

[0161] For example, although an inductively coupled plasma device was described as an example in the above embodiment, it is not limited to this and can be applied to other plasma devices. For example, a capacitively-coupled plasma (CCP) device can be used instead of an inductively coupled plasma device. In this case, the capacitively-coupled plasma device includes opposing upper and lower electrodes. The lower electrode is arranged within a substrate support, and the upper electrode is arranged in the upper part of the processing chamber. Therefore, the RF generation unit is coupled to the upper electrode of the capacitively-coupled plasma device or the antenna of the inductively coupled plasma device. That is, the RF generation unit is coupled to the plasma processing chamber 10.

[0162] It should be noted that this application claims priority based on Japanese Patent Application No. 2023-212650, filed on December 18, 2023, the entire contents of which are incorporated herein by reference.

[0163] Symbol Explanation

[0164] 1. Plasma processing device

[0165] 2. Control Department

[0166] 2a Computer

[0167] 2a1 Processing Department

[0168] 2a2 Storage Unit

[0169] 2a3 Communication Interface

[0170] 10. Plasma processing chamber

[0171] 11. Substrate support

[0172] 13 Central Gas Injection Section

[0173] 21 Gas Source

[0174] 20 Gas Supply Department

[0175] 30 power supply

[0176] 31 RF Power Supply

[0177] 40 Exhaust System

[0178] 50 lifting device

[0179] 51 Support pin

[0180] 52 Actuators

[0181] 111 Main Body

[0182] 112 Ring Components

[0183] 112a First Ring

[0184] 112b Second ring.

Claims

1. A plasma processing apparatus, comprising: The substrate support is arranged in the plasma processing chamber to support the substrate; An edge ring is arranged around the substrate supported by the substrate support portion; The lifting device raises and lowers the edge ring; and Control Department The control unit controls the following processes: The process of preparing a substrate at the substrate support and treating the substrate with plasma; The process of measuring the consumption of the edge ring; as well as The process of controlling the elevator by lowering the edge ring based on the amount of consumption of the edge ring.

2. The plasma processing apparatus according to claim 1, further comprising: A bias RF power supply supplies bias RF power with a frequency of less than 13MHz to the substrate support.

3. The plasma processing apparatus according to claim 2, further comprising: The source RF power supply supplies source RF power with a frequency of 13MHz or higher to the antenna, upper electrode, or substrate support arranged on or above the plasma processing chamber.

4. The plasma processing apparatus according to any one of claims 1 to 3, wherein, The control unit controls the edge ring to descend based on the amount of consumption of the edge ring, such that the incident angle of ions incident on the edge region of the substrate is approximately perpendicular.

5. The plasma processing apparatus according to any one of claims 1 to 3, wherein, The control unit controls the descent of the edge ring from its initial position, where it has been raised to a predetermined height.

6. The plasma processing apparatus according to claim 5, wherein, The initial position of the edge ring is the height of the highest position of the edge ring, which is approximately perpendicular to the incident angle of ions incident on the edge region of the substrate when the edge ring is not consumed.

7. The plasma processing apparatus according to any one of claims 1 to 3, wherein, The control unit controls the process of measuring and storing information about the consumption of the edge ring, the height at which the edge ring is raised, and the incident angle of ions incident on the edge region of the substrate, which is obtained in advance, in the storage unit. Control is performed with reference to the storage unit, thereby causing the edge ring to descend based on the consumption of the edge ring in a manner that makes the incident angle of the ions approximately perpendicular, based on the relevant information.

8. The plasma processing apparatus according to any one of claims 1 to 3, wherein, The edge ring has a first ring that surrounds the substrate and is capable of being raised and lowered, and a second ring that supports the first ring. The control unit performs control to reduce the first ring based on the consumption of the first ring.

9. The plasma processing apparatus according to claim 8, wherein, The control unit controls the process of determining whether the consumption of the first ring has reached a preset limit value. Control is implemented so that, if it is determined that the consumption of the first ring has not reached the limit value, the first ring is decelerated based on its consumption. If it is determined that the consumption of the first ring has reached the limit, the first ring shall be replaced.

10. The plasma processing apparatus according to claim 8, wherein, The control unit performs control to lower the first ring while preventing it from contacting the second ring.

11. The plasma processing apparatus according to claim 8, wherein, The control unit controls the descent of the edge ring to end before the first ring contacts the bottom surface of the concave portion of the second ring opposite to the first ring.

12. The plasma processing apparatus according to claim 2, wherein, The substrate support portion has a base, a substrate support surface disposed on the base and supporting the substrate, and an electrostatic chuck having a ring support surface for mounting the edge ring. The bias RF power is supplied to the base.

13. A control method, the control method being an edge loop control method executed in a plasma processing apparatus, the plasma processing apparatus comprising: The substrate support is arranged in the plasma processing chamber to support the substrate; An edge ring is arranged around the substrate supported by the substrate support portion; as well as The lifting device raises and lowers the edge ring. The control method comprises the following steps: The process of measuring the consumption of the edge ring; and The process of lowering the edge ring based on the amount of consumption of the edge ring using the lifting device.

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