Electrode and coil structures for processing chambers used in semiconductor manufacturing and related chamber kits, apparatuses, and methods

Abstract

Embodiments disclosed herein generally provide improved deposition uniformity in a processing chamber. In one embodiment, which can be combined with other embodiments, a processing chamber suitable for use in semiconductor manufacturing is provided. The processing chamber includes a chamber body including an injection section and an exhaust section. The processing chamber also includes a plate having an opaque surface. The chamber body and the plate at least partially define a processing volume. The processing chamber includes one or more heating sources operable to heat the processing volume; a substrate support disposed in the processing volume; and one or more coils disposed between the substrate support and a lid of the processing chamber.

Description

Technical Field

[0001] This disclosure generally relates to electrode structures for processing chambers, coil structures for processing chambers, and related chamber kits, apparatus, methods, and components for semiconductor manufacturing. Background Technology

[0002] Processing semiconductor substrates is used in a variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be lengthy, expensive, and inefficient, and may have limited capacity and yield. Operations may also be limited by the modularity of the application. Furthermore, the hardware may involve relatively large sizes, occupying a significant footprint in the manufacturing facility. Additionally, the process may involve inhomogeneities, which can impair device performance and / or reduce yield. For example, gas activation can be limited and / or involve non-uniform activation, which may result in limited and / or non-uniform film growth and / or doping concentration. For example, gas activation may be limited at relatively low processing temperatures used for device fabrication (such as complementary field-effect transistor (CFET) devices). Furthermore, relatively high processing temperatures may induce unintentional dopant diffusion and / or impaired device performance.

[0004] Therefore, there is a need to improve the equipment and methods for semiconductor processing. Summary of the Invention

[0005] This disclosure generally relates to electrode and coil structures for processing chambers, and related chamber kits, apparatus, methods, and components for semiconductor manufacturing. The embodiments disclosed herein generally provide improved deposition uniformity in processing chambers.

[0006] In one embodiment, which can be combined with other embodiments, a processing chamber suitable for use in semiconductor manufacturing is provided. The processing chamber includes a chamber body comprising an injection section and an exhaust section. The processing chamber also includes a plate having an opaque surface. The chamber body and the plate at least partially define a processing volume. The processing chamber includes one or more heating sources operable to heat the processing volume; a substrate support disposed within the processing volume; and one or more coils disposed between the substrate support and a cover of the processing chamber.

[0007] In one embodiment, which can be combined with other embodiments, a chamber kit suitable for use in semiconductor manufacturing is provided. The chamber kit includes a liner comprising an inner surface and a plate. The plate is sized and shaped to be disposed within the liner. The plate includes electrodes disposed within the plate.

[0008] In one embodiment, which can be combined with other embodiments, a processing chamber suitable for use in semiconductor manufacturing is provided. The processing chamber includes a chamber body, a plate, a substrate support, one or more coils, and a controller. The chamber body includes an injection section and an exhaust section. The plate and the chamber body at least partially define a processing volume. One or more heat sources are operable to heat the processing volume. The substrate support is disposed within the processing volume. One or more coils are disposed between the substrate support and a cover of the processing chamber. The controller includes a memory. The memory includes instructions that, when executed by a processor, cause the performance of multiple operations. The multiple operations include flowing current through one or more coils, heating the processing volume, and flowing one or more processing gases into the processing chamber. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly outlined above, can be obtained by referring to some embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate exemplary embodiments only and should not be considered as limiting its scope, and other equivalent embodiments are permissible.

[0010] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 3 According to one or more embodiments Figure 1 A schematic partial top view of one or more coils and plates shown.

[0013] Figure 4 According to one or more embodiments Figure 2 A schematic partial top view of the plate and electrodes shown.

[0014] Figure 5 This is a schematic block diagram view of a method for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0015] For ease of understanding, the same component symbols have been used to designate common components in the drawings where possible. It is contemplated that components and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0016] This disclosure generally relates to electrode structures for processing chambers, and related chamber kits, apparatus, methods, and components for semiconductor manufacturing. In one embodiment, which may be combined with other embodiments, the electrode structure is used to generate plasma to activate gases during epitaxial deposition operations at relatively low temperatures.

[0017] This disclosure envisions that the terms "couples," "coupling," "couple," and "coupled" may include, but are not limited to, joining, embedding, welding, fusion, melting together, interference fitting, and / or fastening (such as by using bolts, threaded connections, pins, and / or screws). This disclosure envisions that the terms "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral forming. This disclosure envisions that the terms "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components (such as links, blocks, and / or frames).

[0018] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one embodiment, which may be combined with other embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 forms a precursor crossflow on the top surface 150 of the substrate 102.

[0019] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Within the chamber body are disposed a substrate support 106, a first plate 108 (e.g., an upper plate, such as an upper window, for example, an upper dome), a second plate 110 (e.g., a lower plate, such as a lower window, for example, a lower dome), and one or more heating sources 141, 143. The one or more heating sources 141, 143 include a plurality of upper heating sources 141 and a plurality of lower heating sources 143. The one or more heating sources 141, 143 are operable to heat the processing volume 136. In one embodiment that can be combined with other embodiments, the upper heating source 141 includes an upper lamp, and the lower heating source 143 includes a lower lamp. This disclosure contemplates the use of other heating sources (other than or replacing lamps) for the various heating sources described herein. For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers can be used in the various heating sources described herein.

[0020] A substrate support 106 is disposed between the first plate 108 and the second plate 110. The substrate support 106 supports the substrate 102. In one embodiment that can be combined with other embodiments, the substrate support 106 includes a base. Other substrate supports are contemplated in this disclosure (e.g., one or more ring segments including a substrate carrier and / or supporting one or more external regions of the substrate 102). A plurality of upper heating sources 141 are disposed between the first plate 108 and the cover 154. The plurality of upper heating sources 141 form part of the upper heating source module 155.

[0021] Multiple lower heating sources 143 are disposed between the second plate 110 and the base plate 152. The multiple lower heating sources 143 form part of the lower heating source module 145. The first plate 108 may be an upper dome and / or formed of an energy-permeable material (such as quartz). The second plate 110 may be a lower dome and / or formed of an energy-permeable material (such as quartz).

[0022] The processing volume 136 and the purification volume 138 are formed between the first plate 108 and the second plate 110. The processing volume 136 and the purification volume 138 are at least part of the internal volume defined by the first plate 108, the second plate 110 and one or more gaskets 111, 163. One or more gaskets 111, 163 are disposed inside the chamber body.

[0023] The internal volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one embodiment that can be combined with other embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0024] The substrate support 106 may include lift pin holes 107 disposed therein. Each lift pin hole 107 is sized to receive a lift pin 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 descends from a processing position to a transport position, the lift pin 132 may be positioned on a lift pin stop 134. The lift pin stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0025] Flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purified gas inlets 164 (e.g., multiple purified gas inlets), and one or more exhaust outlets 116. Flow module 112 is part of injection section 103. Injection section 103 also includes one or more gas inlets 114. The one or more gas inlets 114 and the one or more purified gas inlets 164 are located on the side opposite to the one or more exhaust outlets 116.

[0026] A preheating ring 113 is disposed below one or more gas inlets 114 and one or more gas exhaust outlets 116. The preheating ring 113 comprises a complete ring or one or more ring segments. The preheating ring 113 is disposed above one or more purge gas inlets 164. One or more gaskets 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gases used during deposition and / or cleaning operations. The gas inlets 114 and purge gas inlets 164 are each positioned parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136, allowing flow of one or more processing gases P1 and one or more purge gases P2. The gas inlets 114 are fluidly connected to one or more processing gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more exhaust outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as nitrogen (N2) and / or hydrogen (H2)). One or more purifying gases P2 supplied using one or more purifying gas sources 162 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more hydrogen (H), fluorine (F2), and / or chlorine (Cl). In one embodiment that may be combined with other embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), while one or more cleaning gases include hydrochloric acid (HCl). Gas G1 may be supplied to processing volume 136, and gas G1 is ignited in processing volume 136 to form plasma PS1. The gas G1 used to generate plasma PS1 may include, but is not limited to, one or more of the following: hydrogen (H2), xenon (Xe2), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixture thereof (such as xenon and neon). In one embodiment that can be combined with other embodiments, gas G1 includes one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one embodiment that can be combined with other embodiments, gas G1 includes one or more dopant gases, such as germanane, diborane, and / or phosphine. Other gases may be contemplated for use with gas G1.

[0027] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 fluidly connects one or more exhaust outlets 116 to an exhaust pump 157. The exhaust system 109 may assist in the controlled deposition of layers on the substrate 102. The exhaust system 109 is disposed on the opposite side of the processing chamber 100 relative to the flow module 112. One or more exhaust outlets 116 and the exhaust system 109 form an exhaust section 104. In one embodiment that may be combined with other embodiments, an injection section 103 is disposed on the opposite side of the processing chamber 100 relative to the exhaust section 104.

[0028] Processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). Flow module 112 (which may be at least a portion of the sidewall of processing chamber 100) includes one or more gas inlets 114 in fluid communication with processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between upper gasket 163 and lower gasket 111.

[0029] During a deposition operation (e.g., an epitaxial growth operation), one or more processing gases P1 flow through one or more gas inlets 114, through one or more gaps and into a processing volume 136 to flow over the substrate 102.

[0030] This disclosure also envisions that during deposition operations, one or more purge gases P2 may be supplied to and discharged from purge volume 138 (through one or more purge gas inlets 164). The one or more purge gases P2 flow simultaneously with the flow of one or more process gases P1. The one or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more exhaust outlets 116. The one or more purge gases P2 may be discharged through one or more outlet openings and through one or more exhaust outlets 116 identical to those of the one or more process gases P1. This disclosure also envisions that one or more purge gases P2 may be discharged separately through one or more second exhaust outlets separate from the one or more exhaust outlets 116.

[0031] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the processing volume 136.

[0032] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure multiple parameters (e.g., multiple temperatures) within the processing chamber 100. In one embodiment that can be combined with other embodiments, the one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. A controller 190 (described below) can control one or more sensor devices 195, 196, 197, 198 and can use at least one of the one or more sensor devices 195, 196, 197, 198 to implement multiple methods for analyzing substrate processing uniformity. In one embodiment that can be combined with other embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one embodiment that can be combined with other embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one embodiment that can be combined with other embodiments, each sensor device 195, 196, 197, 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer. This disclosure contemplates the use of sensor devices other than pyrometers, and / or one or more of sensor devices 195, 196, 197, 198 that can measure properties other than temperature (such as metrological properties). In one embodiment that can be combined with other embodiments, one or more of sensor devices 195, 196, 197, 198 can measure one or more gas parameters and / or one or more plasma parameters (such as ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, radical density, and / or absorbance). In one embodiment that can be combined with other embodiments, one or more of the sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0033] In one embodiment that can be combined with other embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the base plate 152. This disclosure contemplates that at least one of the one or more lower sensor devices 195 may be vertically arranged below at least one of the upper sensor devices 196, 197 (such as external sensor device 197).

[0034] Each sensor device 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (e.g., dual-wavelength) sensor device. In one embodiment that can be combined with other embodiments, the system including the processing chamber 100 includes any one, any two, or any three of the four shown sensor devices 195, 196, 197, 198. In one embodiment that can be combined with other embodiments, the processing chamber 100 includes one or more additional sensor devices in addition to the sensor devices 195, 196, 197, 198. In one embodiment that can be combined with other embodiments, the processing chamber 100 may include sensor devices disposed at different locations and / or with different orientations from the shown sensor devices 195, 196, 197, 198.

[0035] The processing chamber 100 includes a radio frequency (RF) generator 180 and one or more coils 170. The RF generator 180 is coupled to one or more coils 170. The RF generator 180 is operable to pass current through one or more coils 170 and generate plasma PS1 inductively within the processing volume 136.

[0036] In one embodiment that can be combined with other embodiments, one or more coils 170 are coupled to a first plate 108. One or more coils 170 are disposed between a substrate support 106 and a cover 154. In one or more embodiments, one or more coils 170 are disposed between the first plate 108 and the cover 154. One or more coils 170 are RF coils. In one embodiment that can be combined with other embodiments, one or more coils 170 are at least partially supported by the first plate 108. One or more coils 170 may be induction coils configured to generate plasma PS1 inductively within the processing volume 136. In one embodiment that can be combined with other embodiments, one or more coils 170 are disposed (e.g., embedded) within the first plate 108. One or more coils 170 may be one or more independent coils. For example, one or more coils 170 may include a first coil 170a, a second coil 170b, a third coil 170c, a fourth coil 170d, and a fifth coil 170e. Although shown as five coils, a number of other coils are conceivable. For example, one or more coils 170 may include two coils, three coils, four coils, five coils, or six or more coils. One or more coils 170 in Figure 3 A more detailed description is provided in the description.

[0037] In one embodiment that can be combined with other embodiments, a plurality of lower heating sources 143 provide heat to the processing chamber 100, while one or more coils 170 generate plasma PS1 in the processing volume 136 by induction. In another embodiment that can be combined with other embodiments, the processing chamber 100 is heated by a plurality of lower heating sources 143, thereby eliminating the need for a plurality of upper heating sources 141.

[0038] The first plate 108 includes a first surface 105a and a second surface 105b. In one embodiment that can be combined with other embodiments, the first plate 108 is at least partially formed of an opaque material, such as SiC and / or black quartz. For example, the entire first plate 108 is formed of an opaque material. In one embodiment that can be combined with other embodiments, the first surface 105a and / or the second surface 105b of the first plate 108 are opaque surfaces. In one embodiment that can be combined with other embodiments, the first surface 105a and / or the second surface 105b includes an opaque coating, such as a silicon carbide (SiC) coating and / or a black quartz coating. The opaque first plate 108 can enhance uniformity during deposition because it reduces or eliminates the effect of shadows cast by components between the cap 154 ​​and the first plate 108. For example, the reduction of shadows enhances uniformity because energy from the plurality of upper heating sources 141 bypasses one or more coils 170 disposed between the first plate 108 and the plurality of upper heating sources 141. In one or more embodiments, the first plate 108 includes transparent segments 166 that are respectively aligned with sensor devices 196, 197, and 198.

[0039] In one embodiment that can be combined with other embodiments, the processing chamber 100 includes an electrode 129. The electrode 129 is coupled to (e.g., disposed within, or embedded in) a substrate support 106. For example, the electrode 129 may include a mesh, such as a metal mesh. In one embodiment that can be combined with other embodiments, current flows between one or more coils 170 and the electrode 129 to generate plasma PS1 in the processing volume 136 via capacitive coupling. In one embodiment that can be combined with other embodiments, one or more coils 170 and the first electrode 129 are operable to allow current to flow through at least a portion of the processing volume 136 to generate plasma capacitively in the processing volume 136. The electrode 129 is omitted. For example, the electrode 129 may be omitted, and one or more coils 170 may be used to generate plasma PS1 in the processing volume 136 via induction.

[0040] The processing chamber 100 may include an ion filter. The ion filter can be used to remove ions from the generated plasma. This disclosure envisions that the ion filter can be positioned such that it filters ions from the plasma PS1 before it flows over the substrate 102. The ion filter may include conductive materials, such as silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (e.g., anodized aluminum). The ion filter may include an ion blocking plate.

[0041] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, as described herein. Controller 190 is configured to receive data or input from sensors (such as one or more sensor devices 195, 196, 197, 198) as sensor readings. For example, sensor devices may include: sensor devices monitoring the growth of layers(s) on substrate 102; and / or sensor devices monitoring the temperature of substrate 102 and the heaters within preheating ring 113.

[0042] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuitry 192 for the CPU 193. The controller 190 can control various items directly or via other computers and / or controllers. In one embodiment, which can be combined with other embodiments, the controller 190 is communicatively coupled to a dedicated controller, and the controller 190 functions as a central controller.

[0043] Controller 190 has any form of general-purpose computer processor used in an industrial environment to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191 (or non-transitory computer-readable media) is one or more of random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM) and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4 and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry, and subsystems and the like. Operating parameters (e.g., power applied to heating sources 141, 143, electrical power applied to one or more coils 170 and / or electrodes 129, cleaning formula and / or treatment formula) and operations are stored as software routines in memory 191. Execution or invocation of these software routines transforms controller 190 into a dedicated controller for controlling the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. When executed, instructions stored in memory cause one or more of the operations described herein (such as the operations of method 500) to be performed in relation to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0044] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually, with some operations performed by the user.

[0045] The controller 190 is configured to control the power to one or more heaters 141, 143; the power to the RF generator 180; and the power to one or more coils 170, electrodes 129, and second electrodes 177 (e.g., Figure 2 The current and signal (shown); deposition; cleaning; rotational position; heating; and control of gas flow through the processing chamber 100 by providing output to control, for sensor devices 195, 196, 197, 198, RF generator 180 and / or one or more heaters, upper heating source 141, lower heating source 143, processing gas source 151, purified gas source 162, motion component 121 and / or exhaust pump 157.

[0046] Figure 2 This is a schematic side cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is similar to... Figure 1 The processing chamber 100 in the middle, and includes one or more aspects, features, components, operations and / or properties therein.

[0047] Electrode 129 may be referred to as the first electrode, while the processing chamber 200 includes a second electrode 177. For example, electrode 129 is coupled to ground via a conductive rod 168 coupled to ground. In one or more embodiments, in Figure 2 In this embodiment, the first plate 108 is at least partially formed of an energy-permeable material, such as quartz (e.g., clear quartz). In one embodiment that can be combined with other embodiments, the first plate 108 is a window. The processing chamber 200 includes a third plate 175. The third plate 175 is disposed in the internal volume and between the first plate 108 and the substrate support 106. In one embodiment that can be combined with other embodiments, the third plate 175 is a partition that separates the processing volume 136 from the volume 236 between the third plate 175 and the first plate 108. The third plate 175 is sized and shaped such that it rests on a first boss 173 on the inner side surface 179 of the upper liner 163. The first plate 108 has an outer dimension D1 (e.g., outer diameter). The third plate 175 has an outer dimension D2 (e.g., outer diameter) smaller than the outer dimension D1 of the first plate 108 and larger than the outer dimension D3 (e.g., outer diameter) of the substrate support 106.

[0048] In one embodiment that can be combined with other embodiments, the third plate 175 is formed of an energy-permeable material, such as quartz (e.g., transparent quartz). In another embodiment that can be combined with other embodiments, the third plate 175 is at least partially formed of an opaque material, such as SiC or black quartz.

[0049] The third plate 175 enhances the utilization rate of the processing gas P1 by reducing the processing volume 136. Improving the utilization rate of the processing gas P1 reduces operating and manufacturing costs.

[0050] The third plate 175 includes a second electrode 177. The second electrode 177 is coupled to the third plate 175. In one embodiment that can be combined with other embodiments, the second electrode 177 is disposed within (e.g., embedded in) the third plate 175. The second electrode 177 may be a mesh electrode. For example, the second electrode may be a metal electrode having a lattice structure (e.g., a grid structure). The second electrode 177 is coupled to an RF generator 180. The RF generator 180 is operable to pass current from the second electrode 177 to the first electrode 129 and generate plasma PS1 in a processing volume 136 between the third plate 175 and the substrate support 106. In embodiments where the third plate 175 includes SiC(s), because the third plate 175 serves as a resistance heater, the second electrode 177 may also be operable to supply heat to the substrate 102 by flowing current to the second electrode 177. In one embodiment that can be combined with other embodiments, the second electrode 177 is a passive electrode, and the upper heating source 141 heats the third plate 175 with infrared energy. Figure 4The description of the third plate, 175, is more detailed.

[0051] In one embodiment that can be combined with other embodiments, the second electrode 177 and the first electrode 129 are operable to capacitively couple current through at least a portion of the processing volume 136 to generate plasma in the processing volume 136. In another embodiment that can be combined with other embodiments, the second electrode 177 and the first electrode 129 are a capacitor grid, and plasma is generated when current travels between the second electrode 177 and the first electrode 129 on the third plate 175. Current can flow from the second electrode 177 to the first electrode 129 (as shown), or current can flow from the first electrode 129 to the second electrode 177. The processing chamber 100 can be heated simultaneously by a plurality of upper heating sources 141 and a plurality of lower heating sources 143.

[0052] Figure 3 According to one or more embodiments Figure 1 A schematic partial top view of one or more coils 170 and a first plate 108 is shown. As shown, one or more coils 170 are arranged in a curved pattern (e.g., a circular pattern). For example, a second coil 170b is disposed around and radially outward of the first coil 170a.

[0053] One or more coils 170 may include multiple coils respectively positioned in multiple regions 310. The multiple regions 310 are respectively connected to the substrate support 106 (…). Figure 1 The partial correspondence and alignment of the zones 310. Multiple zones 310 may include some or all of at least the first zone 311, the second zone 312, the third zone 313, the fourth zone 314, the fifth zone 315, and the sixth zone 316. More or fewer zones are conceivable.

[0054] In one embodiment that can be combined with other embodiments, the first coil 170a corresponds to the first region, the second coil 170b corresponds to the second region, and the third coil 170c corresponds to the third region. The fourth coil 170d corresponds to the fourth region, and the fifth coil 170e corresponds to the fifth region. The second region and the second coil 170b are located radially outside the first region and the first coil 170a, and the third region and the third coil 170c are located radially outside the second region and the second coil 170b. The fourth region and the fourth coil 170d are located radially outside the third region and the third coil 170c, and the fifth region and the fifth coil 170e are located radially outside the fourth region and the fourth coil 170e. The outer edge of the first plate 108 is located radially outside the fifth coil 170e.

[0055] RF Generator 180 ( Figure 1 ) directs one or more currents to one or more coils 170. Controller 190 ( Figure 1It is operable to independently control the amount, frequency, and / or phase of the current flowing to each of one or more coils 170.

[0056] In one embodiment that can be combined with other embodiments, the current is an RF current. For example, RF generator 180 ( Figure 1 A first current flows to a first coil 170a, and a second current flows to a second coil 170b. In one embodiment, which may be combined with other embodiments, the first current of one or more currents has approximately the same frequency as the second current. For example, the frequency of the first current differs from the second current by 5% or less.

[0057] In one embodiment that can be combined with other embodiments, the frequency and / or amplitude of the first current is lower than the frequency and / or amplitude of the second current. For example, the frequency of each current increases radially outward across the coil. For example, for each coil from the first coil 170a to the fifth coil 170e, the frequency and / or amplitude of each of one or more coils 170 increases. For example, the current frequency and / or amplitude of the coil is 5% or more greater than that of the adjacent radially inward coil. The frequency of the first current can be from about 40 kHz to about 2.45 GHz. For example, the frequency of the first current can be about 40 kHz, about 13.56 MHz, and / or about 2.45 GHz.

[0058] In one embodiment that can be combined with other embodiments, the frequency and / or amplitude of the current applied to the outermost coil 170e is greater than the first current applied to the first coil 170a.

[0059] In one embodiment that can be combined with other embodiments, the frequency and / or amplitude of the first current is greater than the frequency and / or amplitude of the second current. For example, the frequency and / or amplitude of each current increases radially inward across the coil. For example, for each coil from the first coil 170a to the fifth coil 170e, the frequency and / or amplitude of each of one or more coils 170 decreases. For example, the current frequency and / or amplitude of the coil is 5% or more greater than that of the adjacent radially outward coil.

[0060] In one embodiment that can be combined with other embodiments, the first current and / or the second current is at least partially defined by a pulse signal. The pulse signal may be an on / off signal, wherein it originates from RF generator 180 ( Figure 1 The flow of current begins and stops.

[0061] In one embodiment that can be combined with other embodiments, the RF generator 180 ( Figure 1 The alternating current is driven to one or more coils 170. In one embodiment that can be combined with other embodiments, the RF generator 180 ( Figure 1Direct current is applied to one or more coils 170. In one embodiment, which may be combined with other embodiments, the direct current and / or alternating current is at least partially defined by a pulse signal.

[0062] Figure 4 According to one or more embodiments Figure 2 A schematic partial top view of the third plate 175 and the second electrode 177 shown. The third plate 175 includes the second electrode 177 disposed within the third plate 175.

[0063] In one embodiment that can be combined with other embodiments, the third plate 175 is part of a chamber kit suitable for use in semiconductor manufacturing. The chamber kit may include, for example, an upper liner 163, the third plate 175, and a second electrode 177. The third plate 175 is sized and shaped to fit within the inner surface 179 of the upper liner 163. Figure 2 )Inside.

[0064] In one embodiment that can be combined with other embodiments, the second electrode 177 is a mesh electrode encapsulated by the third plate 175. In another embodiment that can be combined with other embodiments, the second electrode 177 of the third plate 175 is a capacitor mesh. In another embodiment that can be combined with other embodiments, the power of the second electrode 177 is reduced to approximately 0 watts, and the deposition can occur as a thermal epitaxial process.

[0065] Figure 5 This is a schematic block diagram view of a method 500 for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0066] Method 500 includes operation 501, where the heating process volume 136 is heated. In one embodiment that can be combined with other embodiments, the substrate 102 is heated to a target temperature of 400 degrees Celsius or higher or 600 degrees Celsius or lower. In one embodiment that can be combined with other embodiments, the target temperature of the substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one embodiment that can be combined with other embodiments, the target temperature of the substrate 102 is below 500 degrees Celsius. In one embodiment that can be combined with other embodiments, the target temperature of the substrate 102 is 400 degrees Celsius or lower, such as below 200 degrees Celsius (e.g., about 150 degrees Celsius). Heating is achieved by a plurality of upper heating sources 141 ( Figure 1 This can be accomplished by at least one of the multiple lower heating sources 143. In embodiments where the first plate 108 is opaque, the shading effect from the upper heating source 141 can be reduced or eliminated, thereby enhancing deposition uniformity during operation.

[0067] At operation 502, the process gas P1 flows into the process volume 136. In one embodiment that can be combined with other embodiments, operation 502 includes maintaining the process volume under pressure. In one embodiment that can be combined with other embodiments, the pressure is maintained below 60 Torr, such as in the range of 0 Torr to 30 Torr. In one embodiment that can be combined with other embodiments, the pressure is maintained below 1 Torr, such as in the range of 0 Torr to 5 mTorr.

[0068] At operation 503, RF generator 180 directs current to one or more coils 170 and / or second electrode 177 to generate plasma in processing volume 136.

[0069] The advantages of this disclosure include reliable gas activation; adjustable gas activation (e.g., at relatively low processing temperatures); reliable plasma generation and reduction or elimination of shading effects; modularity for chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity of the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. For example, in addition to or replacing electromagnetic radiation (e.g., infrared and / or ultraviolet radiation), ions and / or free radicals can also be used to activate the processed gas. Other advantages include enhanced deposition uniformity, reduced split gas flow, and smaller processing volume.

[0070] Advantages also include enhanced component performance; reduced or eliminated accidental dopant diffusion; efficient processing; and increased yield. It is conceivable to combine one or more aspects disclosed herein. For example, one or more aspects, features, components, operations, and / or properties of the processing chamber 100, controller 190, one or more sensor devices 195, 196, 197, 198, first plate 108, second plate 110, one or more coils 170, third plate 175, first electrode 129, second electrode 177, and / or method 500 may be combined.

[0071] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its essential scope, the scope of which is defined by the following claims.

Claims

1. A processing chamber suitable for use in semiconductor manufacturing, comprising: The chamber body includes an injection section and an exhaust section; A plate, the plate having an opaque surface, and the chamber body and the plate at least partially defining a processing volume; One or more heating sources operable to heat the processing volume; A substrate support is disposed in the processing volume; and One or more coils are disposed between the substrate support and the cover of the processing chamber.

2. The processing chamber according to claim 1, wherein the one or more coils are disposed between the substrate and the cover.

3. The processing chamber according to claim 1, wherein the one or more coils are radio frequency (RF) coils.

4. The processing chamber according to claim 1, wherein the one or more coils are supported by the plate.

5. The processing chamber of claim 1, wherein the substrate support includes a first electrode, and the one or more coils are operable with respect to the first electrode to flow current through at least a portion of the processing volume to generate plasma in the processing volume.

6. The processing chamber according to claim 1, wherein the one or more coils comprise a plurality of coils respectively aligned with a plurality of regions of the substrate support.

7. The processing chamber according to claim 1, wherein the plate is formed of an opaque material.

8. The processing chamber according to claim 1, wherein the one or more coils comprise: A first coil, operable to allow a first current to flow at a first frequency; and A second coil, operable to flow a second current at a second frequency.

9. A chamber kit suitable for use in semiconductor manufacturing, the chamber kit comprising: A liner, the liner including an inner surface; A plate, the size and shape of which are adapted for placement within the liner, the plate comprising electrodes disposed therein.

10. The chamber kit of claim 9, wherein the plate comprises transparent quartz.

11. The chamber assembly of claim 9, wherein the electrodes in the plate comprise mesh electrodes.

12. The chamber assembly of claim 9, further comprising a window comprising a transparent material, the outer dimensions of the window being larger than the outer dimensions of the panel.

13. The chamber kit of claim 9, wherein the plate comprises silicon carbide (SiC) and the electrode is embedded in the SiC.

14. A processing chamber suitable for use in semiconductor manufacturing, comprising: The chamber body includes an injection section and an exhaust section; The plate, and the chamber body and the plate at least partially define the processing volume; One or more heating sources, said heating sources being operable to heat the processing volume; A substrate support member disposed within the processing volume; One or more coils are disposed between the substrate support and the cover of the processing chamber; and A controller, comprising memory containing instructions that, when executed by a processor, cause the execution of a plurality of operations, the plurality of operations including: Current flows through the one or more coils; Heating the processing volume; and One or more processing gases are flowed into the processing chamber.

15. The processing chamber of claim 14, wherein the current is a radio frequency (RF) current, and the current comprises: A first current flows to a first coil of the one or more coils; and The second current flows to the second coil of the one or more coils.

16. The processing chamber according to claim 15, wherein the frequency of the first coil is approximately the same as the frequency of the second coil.

17. The processing chamber of claim 15, wherein the first frequency of the first current flowing to the first coil is lower than the second frequency of the second current flowing to the second coil.

18. The processing chamber of claim 15, wherein the first current is at least partially defined by a pulse signal.

19. The processing chamber according to claim 14, wherein the current comprises direct current.

20. The processing chamber of claim 14, wherein the current is at least partially defined by a pulse signal.

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