Liquid phase epitaxy thin film continuous growth dynamic regulation method and device and mercury cadmium telluride thin film
By dynamically adjusting the amount of volatile component source replenishment and the growth temperature, the problem of thin film composition deviation in liquid phase epitaxial growth was solved, achieving composition stability and thickness control, and improving the quality and production efficiency of semiconductor thin films.
CN122406363APending Publication Date: 2026-07-17安徽光智科技有限公司
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 安徽光智科技有限公司
- Filing Date
- 2026-05-21
- Publication Date
- 2026-07-17
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Figure CN122406363A_ABST
Abstract
本发明公开了一种液相外延薄膜连续生长动态调控方法、装置及碲镉汞薄膜，涉及液相外延生长技术领域。调控方法包括步骤：在多轮次的液相外延生长过程中获取当前轮次液相外延薄膜的组分偏差信息；确定后续轮次中挥发性组分源的补充量调整策略以及生长温度调整策略，当液相外延薄膜的非挥发性组分低于目标含量时，逐轮减少挥发性组分源的补充量；当液相外延薄膜的非挥发性组分高于目标含量时，在下一轮生长时增加挥发性组分源的补充量至第二补充量，并在后续轮次中逐轮减少挥发性组分源的补充量。本发明能够精准补偿液相外延工艺中挥发性组元在长周期、批量化生产中的高温逸散损耗，使制备的半导体薄膜组分稳定收敛至预设目标范围。
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