A multi-stage evolution identification and control method for selective area growth of quantum dots

By monitoring characteristic parameters during the growth process to identify the growth stages of quantum dots and implementing responsive process control, the problem of unstable morphology during the selective growth of quantum dots was solved, and the consistency and controllability of the final morphology were achieved.

CN122406370APending Publication Date: 2026-07-17MULTI-SCALE SIMULATION TECHNOLOGY (HARBIN) CO LTD
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Patent Information

Application Number
CN202610529440.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-21
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing technologies struggle to identify and control the multi-stage evolution of selective growth in quantum dots, resulting in large fluctuations in the final size of quantum dots, premature or delayed entry into lateral epitaxial growth, top depressions, and difficulty in maintaining stable aspect ratio control.

Method used

By monitoring characteristic parameters during the growth process, such as the growth front position, local curvature, and contact line state, multiple stages of the quantum dot growth process can be identified and divided. Based on the stage transition criteria, responsive process control can be implemented to adjust parameters such as deposition flux and temperature to achieve precise regulation.

Benefits of technology

This improved the consistency of the final state morphology of quantum dots, reduced fluctuations in size and aspect ratio, and ensured the controllability and stability of the growth process.

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Abstract

The present application relates to the technical fields of semiconductor micro-nano structure growth control and computational materials, and discloses a multi-stage evolution identification and control method for selective area growth of quantum dots, comprising the following steps: step S1: constructing a system to be grown; step S2: starting the growth of a quantum dot selection area; step S3: acquiring characteristic parameters of the growth process; step S4: identifying a growth stage; step S5: setting a stage transition criterion; step S6: implementing a stage-responsive process control; and step S7: outputting a control result. By monitoring parameters such as the front position, local curvature, bump height and contact line state, the present application can clearly distinguish different growth stages. By setting criteria such as the critical curvature, critical bump height and critical driving force, the present application can predict or judge the starting time of overflow and lateral epitaxial growth. By responsive process regulation for different stages, the present application can reduce the fluctuations in the final size, aspect ratio and crystal face distribution of quantum dots.
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