Preparation method of high-performance QLED high-resolution device based on microcavity structure
By introducing a microcavity structure into QLED devices and optimizing the thickness of each layer and the combination of materials, the problem of low light extraction efficiency of high-resolution QLED devices was solved, and the optical efficiency and external quantum efficiency were improved.
CN122421641APending Publication Date: 2026-07-17FUZHOU UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FUZHOU UNIV
- Filing Date
- 2026-04-29
- Publication Date
- 2026-07-17
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Figure CN122421641A_ABST
Abstract
本发明涉及一种基于微腔结构的高性能QLED高分辨器件的制备方法，属于高分辨量子点发光二极管QLED器件制备技术领域。所述方法，在顶部发射结构中，利用阳极底部的光反射层与阴极的反射效应，构建微腔结构。包括在具反射层的ITO基板上依次制备空穴注入层、空穴传输层，并通过转印图案化绝缘层、旋涂量子点发光材料、制备电子传输层和半透明 / 透明阴极等步骤，形成P‑i‑N型器件结构。通过精确调控各功能层（如空穴传输层、量子点层、电子传输层等）的厚度，使器件满足特定的微腔共振干涉条件，从而对特定波段的光产生选择性共振增强，并利用微腔的珀塞尔效应提高辐射复合速率占比。该方法能有效提升器件的光提取效率和外量子效率，实现高性能QLED高分辨率显示。
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