Cross-sectional imaging method of an inspection volume in a wafer

By combining wedge-shaped cutting geometry with a dual-beam device, the problem of generating high-precision 3D volumetric images of the wafer interior in existing technologies has been solved, enabling high-throughput and high-resolution 3D circuit pattern inspection, especially imaging of deep structures and defect detection.

CN122421735APending Publication Date: 2026-07-17CARL ZEISS SMT GMBH
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Patent Information

Application Number
CN202610392885.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2021-02-04
Filing Date
2021-03-05
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing technologies struggle to generate high-precision 3D volumetric images of the internal inspection volume of a semiconductor wafer without removing the sample from the wafer, particularly for imaging deep structures and detecting defects. Furthermore, existing methods are unable to achieve high-resolution and high-precision 3D circuit pattern inspection at high throughput.

Method used

Using a wedge-shaped cutting geometry and a dual-beam device, the wafer surface is milled at an angle GF through a FIB pillar. Combined with a charged particle imaging device, multiple cross-sectional image slices are generated. Prior information is used to analyze these images to generate high-resolution 3D volumetric images, including depth determination and defect detection.

Benefits of technology

It enables the generation of 3D volumetric images of the internal inspection volume of a wafer with high precision and high throughput without damaging the wafer. It can accurately determine the depth of features and detect defects, and is suitable for high-resolution imaging of multilayer stacks.

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Abstract

本发明涉及一种双光束设备和三维电路图案检查技术，通过对半导体晶片表面以下超过1μm的大深度延伸的检查体积进行截面测量，并且更具体地，涉及一种方法、计算机程序产品和装置，用于在不从晶片移除样品的情况下生成晶片内部的深检查体积的3D体积图像数据。本发明还涉及利用双光束设备进行三维电路图案检查的3D体积图像生成、截面图像对准方法。
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Citation Information

Patent Citations

  • Fiducial design for tilted or glancing mill operations with a charged particle beam

    US10026590B2

  • Pattern measurement method and pattern measurement device

    US10184790B2

  • Method to create three-dimensional images of semiconductor structures using a focused ion beam device and a scanning electron microscope

    US20090296073A1

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    US7438556B2