Etching method and substrate processing apparatus
An etching method that uses alternating fluorocarbon and hydrogen fluoride gases to generate plasma solves the problem of abnormal shapes during etching and achieves higher precision and consistency in etching results.
CN122423355APending Publication Date: 2026-07-17TOKYO ELECTRON LTD
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Patent Information
- Application Number
- CN202480079876.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-27
- Filing Date
- 2024-11-19
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing technologies, shape abnormalities are prone to occur during the etching process.
Method used
Plasma is generated by alternating fluorocarbon gas and hydrogen fluoride gas to etch silicon-containing films. A concave region is formed by using a combination of processing gases with the highest flow rates of fluorocarbon gas and hydrogen fluoride gas, and the etched shape is controlled by a cyclic etching process.
Benefits of technology
It effectively suppressed shape anomalies during the etching process, improving the precision and consistency of etching.
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Figure CN122423355A_ABST
Abstract
本公开提供一种能够抑制蚀刻中的形状异常的技术。蚀刻方法包括：（a）准备具有含有氮的含硅膜和含硅膜上的掩模的基板的工序，掩模含有至少1个开口；和（b）对含硅膜进行蚀刻而形成凹部的工序，（b）包括：（b1）从含有氟碳气体的第一处理气体生成第一等离子体，对含硅膜进行蚀刻的工序，氟碳气体在第一处理气体中流量最大；和（b2）从含有氟化氢气体的第二处理气体生成第二等离子体，对含硅膜进行蚀刻的工序。
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