System and method for die bonding using radiation release

Abstract

A method includes: providing a semiconductor die on a carrier structure near an acceptor site, wherein a flexible interposer is provided between the semiconductor die and the carrier structure holding the die; applying radiation to or near the semiconductor die to cause the semiconductor die to transfer toward the acceptor site, wherein the transferred semiconductor die is bonded to the acceptor site by intermolecular bonding, wherein the radiation causes the flexible interposer to bend before the semiconductor die contacts the acceptor site; and heating the semiconductor die in contact with the acceptor site to induce or improve electrical contact between the semiconductor die and the acceptor site.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to EP application 23220056.8, filed on December 22, 2023, and EP application 24188770.2, filed on July 16, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure generally relates to methods and tools for die bonding. Background Technology

[0004] In the manufacturing process of integrated circuits (ICs), multiple completed or incomplete ICs (e.g., entire wafers, diced wafers, partially diced wafers, chips, dies, etc.) can be placed, stacked, bonded, or otherwise connected (e.g., to heterogeneous or homogeneous devices) at various points in the manufacturing process. For example, heterogeneous integration of different circuits or other patterned devices may rely on the connection of specific portions (e.g., conductive contact elements) of multiple dies, where these portions can be aligned in three-dimensional space to ensure functional connectivity. The alignment of these dies, which may have multiple manufacturing layers, different critical dimensions, different nodes, packages, etc., with each other may require techniques different from those used for photolithography during manufacturing. As the physical size of IC components continues to shrink and their structures become increasingly complex, integration accuracy and yield become more critical. For applications such as heterogeneous integration, accurate and rapid placement of dies relative to each other may be required. In the context of semiconductor manufacturing, improvements in die placement and alignment (e.g., improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration capabilities. Summary of the Invention

[0005] According to an embodiment, a method is provided, comprising: providing a semiconductor die on a carrier structure near an acceptor site, wherein a flexible interposer is provided between the semiconductor die and a carrier structure holding the die; applying radiation to or near the semiconductor die to cause the semiconductor die to shift toward the acceptor site, wherein the shifted semiconductor die is bonded to the acceptor site by intermolecular bonding, wherein the radiation causes the flexible interposer to bend before the semiconductor die contacts the acceptor site; and heating the semiconductor die in contact with the acceptor site to induce or improve electrical contact between the semiconductor die and the acceptor site.

[0006] According to an embodiment, a system is provided, comprising: a structure configured to hold a die; a radiation output device configured to provide radiation toward the die; an actuator for providing relative movement between the structure and a acceptor location to achieve a transfer of the die to the acceptor location, wherein the actuator includes a flexible interlayer including a guide configured to guide the die toward the acceptor location by being relatively flexible to bend toward the acceptor location for transfer but relatively non-flexible in other directions; and a processor system configured to cause the radiation to be provided to or near the die, such that the die is transferred toward the acceptor location such that the transferred die is bonded to the acceptor location by intermolecular bonding. Attached Figure Description

[0007] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and explain these embodiments together with the description. Embodiments of the invention will now be described by way of example only, with reference to the accompanying illustrative drawings; in the drawings, corresponding reference numerals indicate corresponding parts, and in the drawings:

[0008] Figures 1A to 1D This is a schematic diagram illustrating an exemplary die bonding method according to one or more embodiments.

[0009] Figures 2A to 2F This is a schematic diagram illustrating an exemplary method of die placement according to one or more embodiments.

[0010] Figures 3A to 3J This is a schematic diagram illustrating a portion of an exemplary device for die bonding according to one or more embodiments.

[0011] Figures 4A to 4D This is a schematic diagram illustrating an exemplary method of die bonding using radiation-mediated release according to one or more embodiments.

[0012] Figures 5A to 5D This is a schematic diagram illustrating an exemplary method of die bonding using radiation-mediated release and a flexible interlayer according to one or more embodiments.

[0013] Figure 6 The illustration shows an embodiment of an exemplary system configured to perform die bonding using radiation-mediated release, according to one or more embodiments.

[0014] Figure 7 This is a flowchart illustrating an exemplary method of die placement according to one or more embodiments.

[0015] Figure 8 This is a flowchart illustrating an exemplary method of radiation-mediated die release according to one or more embodiments.

[0016] Figure 9 This is a block diagram of an exemplary computer system according to one or more embodiments of the present disclosure. Detailed Implementation

[0017] Embodiments of this disclosure are described in detail with reference to the accompanying drawings, which are provided as illustrative examples to enable those skilled in the art to practice this disclosure. It is important to note that the following drawings and examples are not intended to limit the scope of this disclosure to a single embodiment, but rather to enable other embodiments by means of substitutions of some or all of the described or illustrated elements. Furthermore, where certain elements of this disclosure can be implemented using known components in part or in whole, only those portions of such known components necessary for understanding this disclosure will be described, and detailed descriptions of other portions of such known components will be omitted to avoid obscuring this disclosure. Unless otherwise specified herein, as will be apparent to those skilled in the art, embodiments described as implemented in software are not intended to be limited thereto, but may include embodiments implemented in hardware or a combination of software and hardware, and vice versa. Embodiments showing a single component in this specification should not be considered limiting; in fact, unless expressly stated otherwise herein, this disclosure is intended to cover other embodiments including a plurality of identical components, and vice versa. Furthermore, the applicant does not intend for any term in this specification or claims to be relegated to an uncommon or particular meaning unless so expressly stated. Additionally, this disclosure covers present and future known equivalents of known components mentioned herein by way of description.

[0018] While reference may be specifically made to the manufacture of ICs herein, it should be clearly understood that the description herein has many other possible applications. For example, it can be used to manufacture integrated optical systems, guide and detection patterns for magnetic domain memory, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of these alternative applications, any use of the terms "wafer" or "die" herein should be considered interchangeable with the more general terms "substrate" and "target portion," respectively. The term "wafer" can generally be used to refer to a larger manufacturing unit (which can be the largest manufacturing unit), while the term "die" can be used to refer to a smaller manufacturing unit that may correspond to a lithographic pattern, a portion of a lithographic pattern, multiple lithographic patterns, etc. A "die" can correspond to a portion of a "wafer," i.e., a "die" can be produced by dicing or otherwise dividing a "wafer." The term "die" should be considered interchangeable with the terms "chip," "chiplet," or other terms used for IC partitioning. Patterning apparatus (e.g., lithography equipment) may include or can form one or more patterns that may correspond to one or more dies. Patterns can be generated based on a pattern or design layout using CAD (Computer-Aided Design) programs; this process is often referred to as EDA (Electronic Design Automation). Unless otherwise indicated, as used throughout this application, "or" has a non-exclusive meaning, encompassing both "and" and "or". "Each," "each," "all," "corresponding," "separate," and other relational terms encompass substantially "each," "each," "all," etc., including situations where "each," "each," "all," "corresponding," "separate," etc., can include situations where a non-one-to-one relationship is not included or where every possible item is excluded. For example, "each" can exclude items such as those determined to be defective during testing. "Each" can exclude items such as unused marginal items. "All" can exclude items such as excess items. "Corresponding" does not require items to correspond in a completely one-to-one manner. For example, the first item can correspond to two of the second items, or vice versa. In some cases, "separate" can refer to multiple items, such as each item A having a separate item B, where item A can have two of items B.

[0019] Now for reference Figures 1A to 1D , Figures 1A to 1DThis is a schematic diagram illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted relative to a set of reference axes, which is consistent throughout the illustrative description. The reference axes are provided merely for ease of description and should not be considered limiting. The included methods and apparatus may alternatively be described with reference to different sets of axes (e.g., cylindrical coordinates, polar coordinates, etc.), different origins (e.g., the origin in the die, the origin in the target, the origin between the die and the target, etc.), or different orientations. The set of reference axes is selected such that the manufacturing plane of the die (i.e., the substrate surface) lies in the xy plane, and wherein, for both the die and the target location, the manufacturing direction is parallel or anti-parallel to the z-axis.

[0020] like Figures 1A to 1D As shown, the exemplary die bonding method may involve a donor die 102 and a target die 104. In this document, the terms "donor" and "target" are used for ease of description. It should be understood that the terms "donor" and "target" are provided for reference and are relative descriptions, and an element described as corresponding to a "donor" may alternatively correspond to a "target," and vice versa. The target die may also, or alternatively, be referred to as a recipient die. Furthermore, although... Figure 1A Only one applicant die and one target die are depicted, but it will be understood that multiple such dies may exist, and multiple applicant dies may be bonded to multiple target dies substantially simultaneously, for example, where, for example, multiple dies are still part (all or part) of the substrate in which the dies are formed or on.

[0021] The actuator die 102 may have one or more electrically active regions 106, such as on the alignment surface of the actuator die 102. The one or more electrically active regions 106 may be conductive, such as metallic. The one or more electrically active regions 106 may correspond to one or more vias (e.g., one or more through-silicon vias (TSVs)), one or more electrical contact lines, one or more contact pads, one or more package pads, or other one or more conductive regions. The actuator die 102 may have one or more electrically inert regions (e.g., electrically insulating regions) outside the one or more electrically active regions 106, such as on the alignment surface of the actuator die 102. The one or more electrically active regions 106 may be recessed relative to one or more other surfaces of the actuator die 102 (as shown). The one or more electrically active regions 106 may correspond to one or more contacts (e.g., corresponding to source, drain, gate, etc.) leading to one or more electrical devices (not shown) within the actuator die 102. Similarly, the target die 104 may have one or more electrically active regions 108, which may have one or more properties similar to those of one or more electrically active regions 106.

[0022] The actuator die 102 may also or alternatively have one or more doped regions 110, such as recesses on or below the alignment surface of the actuator die 102. Although the term "doped" is used, it should be understood that one or more doped regions 110 can be any region that has one or more electrical characteristics different from the bulk of the substrate (e.g., a silicon wafer) during manufacturing. One or more doped regions 110 may correspond to the source, drain, gate, ground, or other regions of a circuit that are doped or otherwise altered (e.g., by implantation, oxide growth, thin film deposition, etc.) to have electrical characteristics different from the bulk of the substrate. One or more doped regions 110 may include one or more conductive layers (e.g., one or more highly doped or conductive layers) and / or one or more insulating layers (e.g., one or more oxide layers). The actuator die 102 may have one or more undoped regions (e.g., regions where the substrate retains the characteristics of the bulk substrate) outside one or more doped regions 110 (such as on the alignment surface of the actuator die 102). One or more doped regions 110 may be recessed, buried, coplanar (as shown), etc., relative to one or more other surfaces of the donor die 102. One or more doped regions 110 may correspond to one or more regions of one or more electrical devices within the donor die 102 (e.g., corresponding to one or more source regions, one or more drain regions, one or more gate regions, one or more dielectric regions, etc.), or may form one or more regions of one or more electrical devices across the donor die 102 and the receiver die 104 once the donor die 102 and the receiver die 104 are bonded. Similarly, the target die 104 may have one or more doped regions 112, which may have one or more properties similar to one or more doped regions 110.

[0023] like Figure 1A and Figure 1BAs shown, an exemplary die bonding method may involve aligning at least one of the electrically active regions 106 and / or doped regions 110 of a donor die 102 with at least one of the electrically active regions 108 and / or doped regions 112 of a target die 104. An exemplary die bonding method may involve contacting the donor die 102 with the target die 104 while maintaining alignment, for example, between one or more electrically active regions 106 and one or more electrically active regions 108, such that one or more electrically active regions 106 and one or more electrically active regions 108 can be coupled for use in bridging die-to-die electrical communications. An exemplary die bonding method may involve aligning one or more doped regions 110 of the donor die 102 with one or more doped regions 112 of the target die 104. Alignment may include contact, aligning one or more edges of the respective regions, having overlap, having non-overlap, or any other suitable alignment scheme. An exemplary die bonding method may involve applying or maintaining pressure between an applicant die 102 and a target die 104, with bonding occurring between the two. The applicant die 102 may be supported by a carrier structure 114, which may be a substrate transparent to a range of radiation (e.g., infrared radiation, a portion of the spectrum, etc.). The target die 104 may also be supported by a carrier structure 116, which may be transparent or opaque to a range of radiation. Alternatively, the target die 104 (possibly together with the carrier structure) may be part of an uncuttered or partially diced target wafer. The alignment may be complicated by multiple layers of the applicant die 102 or the target die 104, which may be optically opaque.

[0024] Figure 1A and Figure 1B A cross-sectional view depicting a portion of an exemplary die bonding method shows the relative positioning between the implementer die 102 and the target die 104. (As shown...) Figure 1A As shown, the application die 102 and the target die 104 can be joined together along the z-axis, while the position of the application die 102 or the target die 104 can be adjusted in the xy-plane (e.g., perpendicular to the z-axis of the method) to improve the alignment between the application die 102 and the target die 104. Figure 1B As shown, alignment can be achieved, for example, between one or more electrically active regions 106 and one or more electrically active regions 108 and / or between one or more doped regions 110 of the applicant die 102 and one or more doped regions 112 of the target die 104.

[0025] Once aligned, the donor die 102 and the target die 104 are bonded together. In embodiments, this bonding is a direct or fusion bonding (e.g., involving van der Waals forces). In embodiments, this bonding is an intermolecular bonding, such as van der Waals bonding. In embodiments, this bonding may include covalent, ionic, or metallic (e.g., chemical) bonding, such as hydrogen bonding. In embodiments, this bonding is aided by an alignment surface applied to the donor die 102 and / or the target die 104, or by a material (e.g., in gaseous or liquid form) providing a gap between the donor die 102 and the target die 104. In some embodiments, the physical contact between the donor die 102 and the target die 104 may include bonding, such as bonding wavefronts generated by contact (or atomic energy level proximity) of surfaces prepared for hydrogen bonding.

[0026] like Figure 1B As shown, the applicant die 102 and the target die 104 may be annealed after contact, as depicted by the wavy lines (although wavy lines are shown here at both the applicant die 102 and the target die 104, annealing agent need not be provided at either the applicant die 102 or the target die 104, nor need it be applied in the indicated directions). Annealing can be or includes thermal annealing, electrical annealing, electrostatic processes, etc. In some embodiments, annealing may include annealing of the bonded in-plane (or primary) region and / or annealing of one or more recessed regions, which can increase the fill volume in the recessed regions (e.g., through thermal expansion, capillary forces, etc.) and may cause physical contact and bonding of previously uncontacted regions. Figure 1C As shown, annealing may cause physical or chemical changes, such as in one or more electrically active regions 106 of the actuator die 102 or one or more electrically active regions 108 of the target die 104, which may cause or improve physical or electrical contact between the electrically active regions 106 and 108. Therefore, annealing can produce or enhance electrical connectivity (e.g., integration) between components of the actuator die 102 and the target die 104. This electrical connectivity may still occur even if the electrically active regions 106 and 108 differ, for example, in terms of different recess depths, different materials, different dimensions, etc. In the embodiments, regarding... Figure 1AThe described prior bonding may be temporary during one or more portions of the annealing process, wherein the annealing process forms a tight connection between the applicant die 102 and the target die 104. In embodiments, annealing may occur in the system in which the bonding takes place. In embodiments, annealing may occur in a system separate from the system in which the bonding takes place, for example, the applicant die and the target die are transported from the bonding system to the annealing system, which may include one or more heating elements (e.g., one or more electric heating elements, one or more elements for providing radiant heating, etc.) to provide heat for annealing.

[0027] Once the main die 102 and the target die 104 are bonded, the carrier structure 114 can be removed, such as Figure 1B As shown in the diagram. Alternatively, the carrier structure 116 can then be removed. Alternatively, the carrier structure 116 can be removed once the application die 102 and the target die 104 have been annealed, as shown in the diagram. Figure 1C As shown in the diagram. Alternatively, the carrier structure 114 may then be removed.

[0028] Figure 1D A plan view depicting an exemplary die bonding method according to this disclosure. Figure 1D As shown, the donor die 102 and the target die 104 may have one or more alignment marks along the xy plane to facilitate alignment of the dies as a whole. Alignment marks in the xy plane of the dies (e.g., one or more alignment marks 120 on the donor die 102 or one or more alignment marks 122 on the target die 104) can reduce the area that can be used for circuitry. One or more alignment marks may be placed in a scrap area, such as the area between chips, and then this scrap area may be destroyed (e.g., removed) during dicing. Dicing, as used herein, refers to the mechanical separation of a region of substrate (e.g., a fabrication cell) into a smaller region (e.g., a die or chip) that may contain one or more operational units (e.g., logic devices, memory cells, etc.). Dicing can be performed using any suitable method, such as scribing and breaking, mechanical sawing, laser dicing, etc., and may destroy non-zero linewidth portions of the substrate volume during die separation (e.g., grinding into powder or otherwise rendering it inoperable for circuitry placement). Alignment marks can be fabricated by additive or subtractive methods (e.g., by etching or deposition in the z-direction). Alignment mark 120 and alignment mark 122 may be the same or different. Alignment mark 120 and alignment mark 122 may be multi-directional alignment marks, that is, capable of determining alignment in more than one direction, such as bi-directional alignment marks, examples of which are shown in [examples of such alignment marks]. Figure 1DAlignment mark 120 is shown as 120. Alignment mark 120 and / or alignment mark 122 can be fine alignment marks, such as those used for alignment at the μm scale. Alignment mark 120 can be located on the donor die 102, while the target die 104 can have alignment mark 122 located in a waste region, or vice versa. Alternatively or additionally, one or more electrically active and / or doped regions of the donor die 102 or one or more electrically active and / or doped regions of the target die 104 ( Figure 1D (not shown in the image) or other surface features can serve as alignment references (e.g., alignment marks) for the application die 102 and / or the target die 104.

[0029] The actuator die 102 and the target die 104 can be aligned in up to three dimensions before or during contact between them. For example, when the actuator die 102 contacts the target die 104, either the actuator die 102 or the target die 104 can be positioned in the xy plane. The actuator die 102 or the target die 104 can be positioned by the operation of a die actuator or other die-level element (such as by a piezoelectric stepper element) or by the operation of a chuck or other carrier structure-level element (such as by a motor or other actuator). The position of the actuator die 102 or the target die 104 can be adjusted relative to up to six degrees of freedom. For example, given an origin at the center portion of the actuator die 102, the actuator die 102 can be positioned by moving along the x-axis (e.g., in the positive or negative X direction), along the y-axis (e.g., in the positive or negative Y direction), and along the z-axis (e.g., in the positive or negative Z direction). The actuator core 102 can also be rotated relative to each of those axes, such as rotating relative to the x-axis, the y-axis, and the z-axis. That is, the actuator core 102 can be positioned by free movement in a space interpreted by six different types of movement (wherein the movements listed above are provided as examples, but where said movements can be described by other axes). Of course, the target core 104 can be positioned alone or in combination with the positioning of the actuator core 102. Unless the context otherwise requires, positioning or position adjustment herein includes displacement, rotation, or any combination thereof.

[0030] In some embodiments, the fabrication die 102 and the target die 104 may be measured relative to a reference plane or structure (e.g., the XY plane) (including relative to the same reference plane or structure), but the fabrication die 102 or the target die 104 may be flipped (before or after measurement) so that the fabrication surfaces of the fabrication die 102 and the target die 104 can be bonded (e.g., see example...). Figure 1D(A bottom view). One or more alignment marks (e.g., alignment mark 120 and alignment mark 122) may be located on the manufacturing surfaces of the applicant die 102 and the target die 104, respectively. Once the applicant die 102 or the target die 104 is flipped, one or more alignment marks may be made invisible to alignment measurement tools (e.g., due to the opacity of the die). Therefore, alignment of the flipped die can be performed based on the previously measured position of the die (e.g., one or more alignment marks of the die) relative to the structure (e.g., applicant die 102 relative to carrier structure 114 or target die 104 relative to carrier structure 116).

[0031] Figures 2A to 2F This is a schematic diagram illustrating an exemplary method of placing the die. Figures 2A to 2F It is described with reference to the relative descriptive terms “donor die” (and “donor substrate” including multiple “donor dies”) and “target die” (and “target substrate” including multiple “target dies”), and the donor die can be replaced by the target die, and vice versa. Figures 2A to 2F It is a description of donor die and target die, but may alternatively refer to donor substrate or target substrate, wherein a “substrate” may contain multiple “dies”, including uncut (e.g., unseparated) dies in the form of all or part of a semiconductor wafer. Figures 2A to 2F This is a cross-sectional view showing the placement of the main die (e.g., main dies 202A, 202B, 202C) on the target die (e.g., target die 204A and target die 204B). In some embodiments, the following steps may be performed sequentially: Figures 2A to 2F The description refers to multiple steps that occur substantially simultaneously. In some embodiments, these steps can be performed substantially simultaneously. Figures 2A to 2F The steps are described as occurring sequentially. In some embodiments, multiple application tube dies may be substantially aligned or placed on their respective target dies simultaneously, including application tube dies that are close (including adjacent) or far (e.g., not adjacent but within the same target substrate). In some embodiments, these steps may be performed in a different order.

[0032] Figure 2AThis is a cross-sectional view of the fabrication dies 202A to 202C to be placed on the target dies 204A to 204B. The fabrication dies 202A to 202C are supported by a carrier structure 214. The fabrication dies 202A to 202C can be bonded to the carrier structure 214 in any suitable manner (such as by vacuum bonding, electrostatic bonding, intermolecular bonding, van der Waals bonding, mechanical interlocking, surface reaction, static friction, gravity, etc.). The fabrication dies 202A to 202C can be bonded to the carrier structure 214 using, for example, an adhesive (e.g., a glue (such as an organic polymer glue)). The carrier structure 214 can be a transparent substrate, such as glass, sapphire, polymer, etc. The fabrication dies 202A to 202C can be placed on the carrier structure 214 by any suitable method (such as by a pick-and-place tool). The carrier structure 214 can be supported by a chuck or any other suitable support structure.

[0033] Target dies 204A to 204B are supported by support structure 216. In embodiments, target dies 204A to 204B may be uncut or partially cut portions of a target wafer. Target dies 204A to 204B may be bonded to support structure 216 by any suitable method, such as vacuum bonding, electrostatic bonding, intermolecular bonding, mechanical interlocking, surface reaction, static friction, gravity, etc. Target dies 204A to 204B may be bonded to support structure 216 using, for example, an adhesive (e.g., a glue (such as an organic polymer glue)). In embodiments where, for example, target dies 204A to 204B are cut dies, the support structure may be a carrier structure (e.g., like carrier structure 214) and may be a transparent substrate, such as a glass, sapphire, polymer, or other substrate. Target dies 204A to 204B may be placed on support structure 216 by any suitable method, such as by a pick-and-place tool. The support structure 216 may be a chuck or any other suitable structure, or may be supported by a chuck or any other suitable structure.

[0034] The main dies 202A to 202C and the target dies 204A to 204B can be aligned with each other at alignment points 203A and 205A (for main dies 202A and target dies 204A), alignment points 203B and 205B (for main dies 202B and target dies 204B), and alignment points 203C and 205C (for main dies 202C and target dies 204B). In some embodiments, such as depending on an integrated target, multiple main dies can be placed on a single target die, and vice versa. Alignment points 203A to 203C are depicted for main dies 202A to 202C, while alignment points 205A to 205C are depicted for target dies 204A to 204B. These alignment points are provided only for ease of description and do not necessarily have to be physical features. Multiple alignment points can exist per die. Alignment points can be alignment marks (e.g., Figure 1D Alignment points can be calibrated by various means, such as alignment marks, die edges, die corners, or other features on the edge or surface of the die. Alignment points can be used to align the donor die with the target die, for example, by measuring the positions of various alignment points and then adjusting the positions of the donor and / or target dies, such as by moving the carrier structure supporting the die, to align the alignment points of the donor die with those of the target die (or vice versa). Alignment points can be directly aligned with each other (e.g., as shown in the image). Figures 2A to 2F (As depicted in the image). In some embodiments, alignment points may be aligned relative to each other (e.g., with a predetermined relationship, such as separation by vectors), such as... Figure 1D The bottom of the image depicts alignment marks that are non-overlapping.

[0035] exist Figure 2A In this process, the carrier structure 214 (and / or structure 216) can be positioned in a plane such as the XY plane to align the alignment point 203A of the application die 202A with the alignment point 205A of the target die 204A.

[0036] exist Figure 2B In this process, the application die 202A can be released from the carrier structure 214 via any suitable mechanism (such as release mechanism 230A). The application die 202A comes into contact with the target die 204A at alignment point 207A. Release of the application die 202A can be facilitated by gravity, electrostatic force, physical force, etc. Alignment of the application die 202A with the target die 204A at alignment point 207A can be assisted by any suitable alignment mechanism (including self-alignment (e.g., attraction between a region of the application die 202A and a corresponding region of the target die 204A)). Figure 2A(The combination of alignment point 203A and alignment point 205A). In one embodiment, the release occurs when the actuator die 202A contacts the target die 204A (at least partially). In another embodiment, the release occurs before the actuator die 202A contacts the target die 204A.

[0037] exist Figure 2C In this configuration, carrier structure 214 and (alternatively or additionally) structure 216 can be moved to align another donor die (e.g., donor die 202C) with another target die (e.g., target die 204B). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on measurements of the relative positions of the alignment points (such as using alignment marks or features on the die or carrier structure, using the position of alignment points on another donor or target die, etc.). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on one or more substantially simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. Although only the alignment of one actuator die (e.g., actuator die 202C) with a target die (e.g., target die 204B) is depicted, the alignment of one or more sets of actuator dies and target dies may occur substantially simultaneously, such that if the alignment points of multiple actuator dies are aligned with the alignment points of multiple target dies for a given relative position of carrier structure 214 and support structure 216. However, the ability to substantially place multiple actuator dies simultaneously may depend on the ability of the actuator dies placement and release mechanisms on carrier structure 214 to release multiple actuator dies.

[0038] exist Figure 2D In this process, the application die 202C can be released from the carrier structure 214 via any suitable mechanism (such as release mechanism 230C). The application die 202C comes into contact with the target die 204B at alignment point 207C. Release of the application die 202C can be facilitated by gravity, electrostatic force, physical force, etc. Alignment of the application die 202C with the target die 204B at alignment point 207C can be assisted by any suitable alignment mechanism (including self-alignment). (The alignment refers to...) Figure 2A (The combination of alignment points 203C and 205C). In one embodiment, the release occurs when the actuator die 202B contacts the target die 204B (at least partially). In another embodiment, the release occurs before the actuator die 202B contacts the target die 204B.

[0039] exist Figure 2EIn this configuration, carrier structure 214 and (alternatively or additionally) structure 216 can be moved to align another donor die (e.g., donor die 202B) with another target die (e.g., target die 204B). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on prior measurements of the relative positions of the alignment points (such as using alignment marks on the die or carrier structure, using alignment points on another donor or target die, etc.). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on one or more substantially simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. As depicted, donor dies 202B and 202C are aligned to the same target die (e.g., target die 204B). In some embodiments, the donor die is placed on the target die in a substantially one-to-one relationship (e.g., as depicted for donor die 202A and target die 204A). In some embodiments, multiple donor dies (or target dies) may be placed on the same target die (or donor die). In some embodiments, multiple donor dies (or target dies) may be placed on an uncut (e.g., unseparated) target die (or donor die), such as on all or a portion of a substrate containing the target die (or donor die). In some embodiments, the donor die may be placed on a target die having multiple dies, including dies stacked (e.g., bonded) in a three-layer die bonding stack.

[0040] exist Figure 2F In this process, the application die 202B can be released from the carrier structure 214 via any suitable mechanism (such as release mechanism 230B). The application die 202B comes into contact with the target die 204B at alignment point 207B. Release of the application die 202B can be facilitated by gravity, electrostatic force, physical force, etc. Alignment of the application die 202B with the target die 204B at alignment point 207B can be assisted by any suitable alignment mechanism (including self-alignment). (The alignment refers to...) Figure 2A (The combination of alignment point 203B and alignment point 205B). In one embodiment, the release occurs when the actuator die 202B contacts the target die 204B (at least partially). In another embodiment, the release occurs before the actuator die 202B contacts the target die 204B.

[0041] Figures 3A to 3J This is a schematic diagram of a portion of an exemplary device used for die bonding. Figures 3A to 3JThe term "application lead die" and "target die" are used as relative descriptors in this article, and the application lead die can be used as a target die, and vice versa. Figure 3A , Figure 3C , Figure 3E , Figure 3G ,and Figure 3I Each of these is a plan view of the equipment during the placement of the application tube core onto the target tube core. Figure 3B , Figure 3D , Figure 3F , Figure 3H ,and Figure 3JEach of these figures is a cross-sectional view of the device during the placement of the donor die onto the target die. While the views of the device in each figure represent different operations of the device, operations depicted as occurring in different figures may occur at different times or may alternatively be performed simultaneously, and operations depicted as occurring in the same figure may alternatively be performed independently or at different times. Although the donor substrate 300 and target substrate 350 are depicted as circular, they may alternatively be any suitable shape, including rectangular, square, etc. The donor substrate 300 (and target substrate 350) may be a substrate in which the donor die (target die) has been formed or on. The donor substrate 300 (target substrate 350) may be a “reconstructed wafer” in which the donor die (target die) (or other different portions of the semiconductor substrate) is arranged or supported on a carrier structure, for example, in a position suitable for die bonding. Therefore, the donor substrate 300 (target substrate 350) can be a carrier structure and a donor die (target die), wherein the donor die (target die) can be held (e.g., bonded) to the carrier structure by any suitable method (such as by gravity, by an adhesive (e.g., an organic polymer adhesive), by electrostatic force, etc.). The donor substrate 300 (target substrate 350) may contain previously tested donor dies (target dies), such as donor dies (target dies) tested through failure analysis or other post-manufacturing tests. The donor substrate 300 (target substrate 350) may contain donor dies (target dies) from the same or different semiconductor substrates (e.g., manufacturing substrates), including donor dies (target dies) of different types, different sizes, etc. The donor substrate 300 (target substrate 350) may have donor dies (target dies) placed on the donor substrate 300 (target substrate 350) by any suitable method such as a pick-and-place tool. The donor substrate 300 (target substrate 350) can be supported by a carrier structure, vacuum chuck, electrostatic chuck, etc., from a top side (e.g., the manufacturing surface) or a back side (e.g., the body substrate or carrier structure surface), or from different surfaces at different points. The donor substrate 300 or donor die (target substrate 350 or target die) can have the manufactured devices, such as through-silicon vias (TSVs), contact pads, etc., on multiple surfaces, such that both the top side and the back side are manufacturing surfaces.

[0042] exist Figure 3AIn this embodiment, the donor substrate 300 can be placed on a substrate chuck 320A. The substrate chuck 320A can be a suitable substrate chuck to support the donor substrate 300 in the form of a carrier structure for the semiconductor substrate or donor substrate 300. The substrate chuck 320A can be supported by a support structure 322A. The support structure 322A can be a movable support structure that can move in the XY plane, such as from a first position where the substrate chuck 320A receives the donor substrate 300 to a second position where the donor substrate 300 can be measured. The substrate chuck 320A can include (e.g., support) one or more die actuators or other mechanical or electrical actuators that can move the donor die or donor substrate 300 in one or more dimensions (including in the XY plane, in the Z direction, rotationally, etc.). The substrate chuck 320A may have one or more alignment marks to allow a camera or other measurement system to track the position of the substrate chuck 320A. The substrate chuck 320A may have multiple sets of alignment marks, such as coarse alignment marks and / or fine alignment marks. The substrate chuck 320A can be moved from one location to another in free space, etc., such as by the action of the support structure 322A. The support structure 322A can be configured to move in multiple directions and at multiple scales (e.g., in coarse and fine steps), such as by multiple motors or steppers. The support structure 322A can be initiated by a controller of an exemplary device, wherein the controller (not depicted) of the exemplary device can also control the placement of the donor substrate 300 on the substrate chuck 320A and other operations described herein.

[0043] The substrate chuck 320A may have measurement points (or alignment points) such as those identified by cross-shaped measurement marks 327 and circular zero measurement marks 328, which are provided only as examples, and any suitable zero measurement marks may be used. The measurement points can be used to place the donor substrate 300 onto the substrate chuck 320A, such as during the movement of the substrate onto the chuck (e.g., by inserting the donor substrate via a substrate handler). Once the donor substrate 300 is placed onto the substrate chuck 320A, the measurement points can be used to measure the relative position of the donor dies of the donor substrate 300. The placement of the donor dies can be measured relative to the measurement points with an accuracy up to nm. Measurements of the position of the donor dies after placement can be obtained from any suitable measurement system, such as optical microscopy, reflectometry, diffraction, etc.

[0044] Figure 3AAnother substrate chuck 320B on support structure 322B is also depicted. Substrate chuck 320B can be any suitable substrate chuck, such as being substantially the same as substrate chuck 320A. Support structure 322B can be any suitable support structure, such as being substantially the same as support structure 322A. In some embodiments, substrate chuck 320B and substrate chuck 320A can be substantially indistinguishable. In some embodiments, support structure 322B and support structure 322A can be substantially indistinguishable. Although two substrate chucks and two support structures are depicted, in some embodiments, more or fewer substrate chucks and support structures may be present in the device. Operations depicted as being performed by substrate chuck 320B (substrate chuck 320A) can be performed alternatively or additionally by any suitable substrate chuck. Similarly, operations depicted as being performed by support structure 322B (support structure 322A) can be performed alternatively or additionally by any suitable support structure.

[0045] Figure 3A A flipper 330 is also depicted. The flipper 330 can be, for example, around Figure 3A Any suitable device for the longitudinal axis of the donor substrate 300 or a planar flipped substrate (e.g., donor substrate 300) depicted in the diagram. Reference will be made to... Figure 3E and Figure 3F The flipper 330 is described in more detail.

[0046] exist Figure 3B The figure depicts a cross-sectional view of a donor substrate 300. The donor substrate 300 includes a carrier structure 314 supporting one or more donor dies (e.g., donor dies 302A to 302C). The substrate may have one or more alignment points, such as alignment point 315, for measuring the relative position of the donor dies 302A to 302C with respect to the carrier structure. The donor dies may have alignment points, such as alignment points 303A to 303C for the donor dies 302A to 302C, respectively. For ease of description, alignment points are provided in these figures as schematic representations and may be any suitable alignment points, including alignment marks, fabricated features, edge features, etc., as previously described. When the donor substrate 300 is located in a substrate chuck (e.g., Figure 3AWhen the substrate chuck 320A is in place, the position of the donor die (e.g., donor dies 302A to 302C) is measured, for example, by means of a measuring tool 340A. The position can be measured as an absolute position, a relative position, a position relative to other dies, a position relative to an alignment point on the substrate, etc. The measured position can be stored by the device's controller, for example, for later positioning of the donor substrate 300. The measuring tool 340A can be a camera, including a still camera, a video camera, etc. The measuring tool 340A can be any suitable tool for measuring the position of the donor die, measuring the position of the alignment point of the donor die, measuring the position of the alignment mark of the donor die, etc.

[0047] exist Figure 3C In this configuration, the donor substrate 300 is supported by a substrate chuck 320A, which is in turn supported by a support structure 322A. Once the position of the donor die is measured, the substrate chuck 320A can be moved, such as out of the measurement position. The support structure 322A can be moved (e.g., along direction 324) to the position of the support structure 322B, while the support structure 322B can be moved (e.g., along direction 323) to the position of the support structure 322A. This position is provided as an example, and the support structures can be moved to different positions. For example, in some embodiments, the support structure 322B can be moved to a loading position to receive a target substrate (e.g., target substrate 350). The substrate chuck 320A can then occupy another position in the device (e.g., a bonding position, a flip position, etc.). After the position of the donor die is measured (e.g., at...), Figure 3B (After the measurement depicted in the figure) the position to which the substrate chuck 320A is moved can be configured to allow the flipper 330 to accept the donor substrate 300 from the substrate chuck 320A.

[0048] exist Figure 3D In the middle, the donor substrate 300 is depicted moving to the substrate other than the donor substrate 300. Figure 3B The position of the measurement location. The movement can correspond to the movement of the donor substrate 300 in direction 324, such as by... Figure 3C The movement of the support structure 322A. Although this figure is provided to show the continuity of the die bonding process in both plan and cross-sectional views, it can be compared with... Figure 3C or Figure 3E The processes described herein occur substantially simultaneously, wherein steps described previously as occurring individually (including sequentially) can be performed substantially simultaneously.

[0049] exist Figure 3EIn this configuration, the target substrate 350 can be placed on a substrate chuck 320B. The substrate chuck 320B can be any suitable substrate chuck as previously described. The substrate chuck can be supported by a support structure 322B, which can be any suitable support structure as previously described.

[0050] exist Figure 3E In this process, the donor substrate 300 can be transferred to the flipper 330. The flipper 330 can accept (e.g., obtain) the donor substrate from the substrate chuck 320A, such as by using an edge jig, vacuum jig, finger fork, etc. The flipper 330 can hold the donor substrate by one or more edges (e.g., one or more edges of the carrier structure 314) or one or more sides (e.g., the back side of the carrier structure 314 that does not support the donor core). The flipper 330 can rotate the donor substrate 300 inverted (e.g., relative to the direction of gravity). The flipper 330 can hold the donor substrate 300 inverted (e.g., opposite) relative to the XY plane previously occupied by the donor substrate 300 or in any other suitable orientation. The flipper 330 can hold the donor substrate 300 or place the donor substrate 300 into the support structure such that the donor substrate 300 faces the plane of the target substrate 350. The flipper 330 can rotate or displace the donor substrate 300 in the XY plane, and can also displace or rotate the donor substrate 300 out of the XY plane. The flipper 330 can be any suitable rotation or translation device.

[0051] exist Figure 3F The figure depicts a cross-sectional view of a target substrate 350. The target substrate 350 includes a carrier structure 316 supporting one or more target dies (e.g., target dies 304A to 304C). The substrate may have one or more alignment points, such as alignment point 317. The target dies may have alignment points, such as alignment points 305A to 305C for target dies 304A to 304C respectively. For ease of description, alignment points are provided in these figures as schematic representations and may be any suitable alignment point, including alignment marks, fabricated features, edge features, etc., as previously described. When the target substrate 350 is located in a substrate chuck (e.g., Figure 3E When the substrate chuck 320B is in place, the position of one or more target dies (e.g., target dies 304A to 304C) is measured, for example, by means of a measuring tool 340B. The measuring tool 340B can be used to measure one or more substrate dies (e.g., ... Figure 3BThe measuring tool 340B can measure the position of the donor substrate 300 (dies 302A to 302C) using either a measuring tool 340A or a different measuring tool. The measuring tool 340B can measure a different number of positions compared to the measuring tool 340A, substantially different positions (e.g., positions on the target substrate 300 different from those measured by the measuring tool 340A on the donor substrate 300), or different positions relative to the dies (e.g., donor dies 302A to 302C relative to target dies 304A to 304C). Positions can be measured as absolute positions, relative positions, positions relative to other dies, positions relative to alignment points on the substrate, etc. The measured positions can be stored by the device's controller, such as for later positioning of the target substrate 350. The measuring tool 340B can be a camera, including a still camera, a video camera, etc. The measuring tool 340B can be any suitable tool for measuring the position of the donor die, measuring the position of the alignment point of the donor die, measuring the position of the alignment mark of the donor die, etc. The target substrate 350 may undergo deformation due to being held by a substrate chuck, etc. The measurement tool 340B also enables the determination of the deformation of the target substrate by measuring the position. The controller can determine the deformation of the target substrate 350 based on those measured positions (e.g., according to curve fitting, using a physical deformation model, etc.).

[0052] exist Figure 3F In the middle, the donor substrate 300 is supported by a bonding support structure 332. The bonding support structure 332 can be ( Figure 3E A portion of the flipper 330, or donor substrate 300, can be placed into the bonding support structure 332 via the flipper 330. The bonding support structure 332 can maintain the donor substrate 300 in planar relative position to the target substrate 350. The bonding support structure 332 can hold the donor substrate via a carrier structure 314, including holding the donor substrate via one or more edges of the carrier structure 314. When in the bonding support structure 332, the position of the donor substrate 300 can be measured, for example, by means of a measuring tool 340C, to achieve, for example, relative positioning between the donor substrate 300 and the target substrate 350. The measuring tool 340C can be any suitable measuring tool. The measuring tool 340C can measure the position of the donor main die (e.g., donor main dies 302A to 302C), the position of the alignment point 315, etc. The measurement tool 340C can measure significantly fewer locations than the measurement tools 340A or 340B, and the controller can determine the location of the target substrate 350 based on those fewer locations (e.g., according to curve fitting, using a physical deformation model, etc.). The controller can be based on the applied tube die 302A to 302C (such as according to...). Figure 3BThe updated position of the donor substrate 300 (e.g., donor substrate 302A to 302C) is determined by a combination of the measurement position of the donor substrate 300 and the measurement position of the donor substrate 300. The donor substrate 300 may undergo deformation due to the holding of the substrate chuck, the movement of the flipper 330, the suspension from the bonding support structure 332, etc. The measurement tool 340C also enables the determination of the deformation of the donor substrate by measuring the position. As noted above, the measurement tool 340C can measure significantly fewer positions than the measurement tools 340A and 340B, and the controller can determine the deformation of the donor substrate 300 based on fewer positions than those measured by the measurement tool 340A on the donor substrate 300 or by the measurement tool 340B on the target substrate 350 (e.g., based on curve fitting, using a physical deformation model, etc.).

[0053] exist Figure 3G In the process, the target substrate 350 is supported by a substrate chuck 320B, which is in turn supported by a support structure 322B. Once the position of the target die is measured, the substrate chuck 320B can be moved to engage with a flipper (e.g., by a...). Figure 3F The donor substrate 300 is aligned with the bonding support structure 332. Support structure 322B can be moved (e.g., along direction 326) to the position of support structure 322A, while support structure 322A can be moved (e.g., along direction 325) to the position of support structure 322B. This position is provided as an example, and the support structures can be moved to different positions. For example, in some embodiments, support structure 322A can be moved to a loading position to receive an additional target substrate (e.g., target substrate 350). The substrate chuck 320B can then occupy another position in the device (e.g., a bonding position). After measuring the position of the target die (e.g., at... Figure 3F Following the measurements depicted, the substrate chuck 320B is moved to a position that can be configured to place the donor die of the donor substrate 300 onto the target die of the target substrate 350. The substrate chuck 320B can be aligned with the donor substrate 300 in a flipper 330, which can be held above the plane of the substrate chuck 320B (e.g., ...). Figure 3G The top view depicts a donor substrate 300 that is at least partially located above the plane of substrate chuck 320B (e.g., shielding substrate chuck 320A).

[0054] exist Figure 3H In this configuration, the donor substrate 300 and the target substrate 350 are aligned. The donor substrate 300 can be aligned with the target substrate 350 by moving the bonding support structure 332, such as in either orientation or orientation 333. The target substrate 350 can be aligned via a substrate chuck (e.g., Figure 3G The substrate chuck 320B) or support structure (e.g., Figure 3G The support structure 322B moves and aligns with the donor substrate 300. The donor substrate 300 and the target substrate 350 can be aligned with each other, including by both coarse and fine alignment, such as alignment by the relative positions of one or more alignment points (e.g., alignment point 315 of the donor substrate 300 and alignment point 317 of the target substrate 350). In some embodiments, the donor substrate 300 and the target substrate 350 can be aligned, such as by coarse alignment. In some embodiments, once the donor substrate 300 and the target substrate 350 are aligned, one or more donor dies of the donor substrate 300 can be aligned with one or more target dies of the target substrate 350. Figure 3H The diagram depicts the alignment of the actuator die 302B with the target die 304B (e.g., alignment point 303B of the actuator die 302B with alignment point 305B of the target die 304B). Once the actuator die is aligned with the target die, the actuator die can be placed on the target die by any suitable method (e.g., die actuator activation, gravitational acceleration, electrostatic actuation, etc.).

[0055] exist Figure 3I In this process, an additional donor substrate (e.g., donor substrate 300-2 having carrier structure 314-2) is placed on substrate chuck 320A for additional placement of the donor die on the target die. In some embodiments, the additional donor substrate may be placed on substrate chuck 320A after the substrate of the previous donor substrate has been removed from substrate chuck 320A, for example, after the substrate of the donor substrate has been removed from flipper 330 and replaced on substrate chuck 320A. In some embodiments, the previous donor substrate may be removed from flipper 330 without resorting to substrate chuck 320A, such as by removal from flipper to additional substrate chuck (not depicted) or any other suitable removal process. The additional donor substrate may be placed on substrate chuck 320A at any time after the previous donor substrate has been accepted by flipper 330 or when substrate chuck 320A (or another substrate chuck) is idle. The additional donor substrate (e.g., donor substrate 300-2) may be substantially the same as or different from the previous donor substrate (e.g., donor substrate 300). The processing of donor substrate 300-2 by placing the donor die on the target die can be as previously described. Figures 3A to 3H The process is carried out as described, such as by being placed on an additional target substrate (not depicted). The donor substrate 300-2 may be placed on the substrate chuck 320A, while the donor die of the donor substrate 300 (such as substantially simultaneously) is placed on the target die of the target substrate 350.

[0056] exist Figure 3JIn the process, measure the position of the main application tube core (e.g., main application tube cores 302A-2 to 302C-2) and / or mark 315-2, as previously stated. Figure 3B As described.

[0057] exist Figure 3J In this embodiment, an additional donor die of donor substrate 300 is placed on a target die of target substrate 350. The positions of donor substrate 300, target substrate 350, or a combination thereof can be adjusted to align the additional donor die of donor substrate 300 with the target die of target substrate 350. As depicted, donor substrate 300 is positioned (e.g., by movement in orientation or orientation 334) to align alignment point 303A of donor die 302A with alignment point 305A of target die 304A. Donor die 302A can then be placed on target die 304A by any suitable method as previously described. Donor die 302B is depicted as being in its... Figure 3H After alignment at alignment point 307B, it is bonded to the target die 304B. If desired, this process can be repeated as appropriate. Figures 3A to 3H Various steps are involved in bonding multiple dies and processing multiple donor and target substrates.

[0058] Figures 4A to 4D This is a schematic diagram illustrating an exemplary method for die bonding using radiation-mediated release. Figures 4A to 4D This is a cross-sectional view of bonding the donor die (e.g., donor die 402) to the target die (e.g., target die 404) via radiation-mediated release. Refer to the descriptions of "donor die" and "target die". Figures 4A to 4D "Donor die" and "target die" are relative descriptive terms as used herein, and donor die may alternatively be target die and vice versa. Donor die may alternatively be donor substrate, and target die may alternatively be target substrate, and donor die may be bonded to target substrate, donor substrate may be bonded to target substrate, and donor substrate may be bonded to target die. Multiple donor dies may be bonded to a single target die, and vice versa. Radiation-mediated release may be used with any suitable die bonding method, such as any of the methods previously described.

[0059] exist Figure 4AIn this embodiment, the substrate core 402 is supported by a carrier structure 414. The carrier structure 414 is transparent to at least a range of radiation (e.g., electromagnetic radiation, visible light, UV radiation, particles, or electron beams). The carrier structure 414 can be transparent to visible light, infrared radiation, ultraviolet radiation, particles, or electron beams. The carrier structure 414 can be made of any suitable material, such as glass, silicon dioxide, sapphire, acrylic, etc. The carrier structure 414 can be a flexible substrate, such as a flexible polymer supported by an upper structure (e.g., a substrate chuck with one or more radiation windows). The carrier structure 414 can also be a substantially non-flexible substrate. The thickness of the carrier structure 414 (e.g., in the Z direction) can vary depending on the type of material from which the carrier structure 414 is made, for example, the thickness can be selected based on a deformation threshold, electromagnetic extinction coefficient, etc.

[0060] In an embodiment, the application tube core 402 is bonded to the carrier structure 414 via, for example, an adhesive layer 450. Herein, “bonded” includes releasably retaining one material to another, including where the release is chemically, physically, electrically mediated, etc. The adhesive 450 can be any suitable adhesive, such as an organic glue, polymeric glue, etc. The adhesive 450 can be applied to the carrier structure 414 (e.g., by spin coating), and then the application tube core 402 is applied to the adhesive 450 on the substrate. The adhesive 450 can be applied to the surface of the application tube core 402 (e.g., by inkjet printing, dipping, etc.), and then the application tube core 402 and the adhesive 450 are transferred to the carrier structure 414.

[0061] Adhesive 450 may have any suitable thickness. Adhesive 450 may be an adhesive that forms a gas when exposed to radiation or heat. For example, adhesive 450 may be an adhesive that undergoes a phase change from solid or liquid to gas (such as at atmospheric temperature and pressure) when excited or heated by a radiation pulse. Adhesive 450 may be an adhesive that undergoes a chemical change (such as decomposition) that forms a gas when excited or heated by a radiation pulse. In some embodiments, adhesive 450 may expand in volume without forming a gas or only partially forming a gas when exposed to radiation or heat. For example, adhesive 450 may contain dissolved gas that may partially precipitate upon exposure to radiation or heat and may generate bubbles within adhesive 450, thereby increasing the volume occupied by the adhesive. Adhesive 450 may be any suitable material that undergoes radiation-mediated volume expansion. Carrier structure 414 may be transparent to radiation of the wavelength that causes radiation-mediated volume expansion in adhesive 450.

[0062] exist Figure 4A and Figure 4BIn this process, the applicant die 402 is aligned with the target die 404. Alignment can be performed by any suitable method, such as any of the methods previously described. Alignment point 403 of the applicant die 402 can be aligned with alignment point 405 of the applicant die 404 to become aligned, as shown in alignment 407. Alignment can be achieved by moving the carrier structure 414 supporting the applicant die 402 and / or by using the carrier structure 416 supporting the target die 404. The applicant die 402 can be prepared for bonding with the target die 404, for example, by atomic-level cleaning and flattening treatment (and vice versa). The applicant die 402 and the target die 404 can be bonded to each other, for example, by van der Waals bonding, when close (e.g., within the order of the van der Waals contact distance, such as within twice but greater than twice the van der Waals contact distance) and under sufficient other conditions (e.g., matching shape (the matching shape needs to be flat), smoothness, etc.). The donor die 402 and the target die 404 can then be annealed (e.g., heated) to create or enhance the electrical bonding between the regions of the donor die 402 and the target die 404 (such as reference). Figures 1A to 1C (as described).

[0063] exist Figure 4B In this process, radiation 420 is applied to adhesive 450. Radiation 420 can be a radiation pulse (e.g., radiation emission) that can be applied to adhesive 450 to initiate or continue a radiation-mediated bonding process. Radiation 420 can be part of a larger radiation pattern that may be non-uniform above the applicant core 402, above the carrier structure 414, etc. Radiation 420 can be directed towards the central portion of the applicant core, the edge of the applicant core, or a corner, etc. Radiation 420 can be a scanning beam, i.e., there is relative motion between radiation 420 and the applicant core 402. Radiation 420 can be variable, such as undergoing Gaussian intensity variations. Radiation 420 can be applied in a direction 422 that is substantially perpendicular (e.g., within 10 degrees) to the carrier structure 414 (e.g., substantially perpendicular to the plane of the applicant core 402 that contacts adhesive 450). In this embodiment, there is relative movement between the radiator 420 and the spool 402 so that different portions of the face of the spool 402 subsequently come into contact with the target die 404—effectively, “rolling” the spool onto the target die. This “rolling” can proceed from one edge of the spool towards another edge, or from the central portion of the spool outwards to one or more edges of the spool, as... Figure 4C and Figure 4D As depicted in the text.

[0064] Applying radiation 420 to the adhesive 450 can generate gas (or other volume expansion as previously described) “bubbles,” such as bubble 452. Bubble 452 can occupy the entire thickness of the adhesive 450 (e.g., the entire adhesive layer can be broken down into gas) or a portion of the adhesive 450 thickness (e.g., as shown in the figure). Bubble 452 can cause deformation of the back side 454 of the spool 402 (e.g., the surface of the spool 402 in contact with the adhesive 450). Bubble 452 can also cause deformation of the front side 456 of the spool 402, which can cause the front side 456 to protrude adjacent to the target die 404. The deformation of the spool 402 can depend on the thickness of the adhesive 450 and the amount of adhesive 450 broken down into gas or volume expansion, as well as the thickness and size of the spool 402. For example, a 3mm × 3mm die with a thickness of 1.5μm may experience a bending of up to 4μm (e.g., in the Z direction) due to a pressure of 1 Pa generated in the bubble 452.

[0065] like Figure 4C As shown, relative movement may exist between the radiation 420 and the surfaces of the applicant core 402 and the adhesive 450 (e.g., movement of the transfer spot of the applicant core 402 and / or the radiation 420 in direction 424) to cause further decomposition or volume expansion of the adhesive 450 and increase the size of the bubble 452. As the bubble 452 increases, the applicant core 402 can bend, such that the applicant core 402 contacts the target core 404, for example, at contact point 458. Once the applicant core 402 contacts the target core 404, a bonding wavefront can be emitted from the contact point 458, resulting in the formation of van der Waals bonds between atoms on the surface of the applicant core 402 and the surface of the target core 404. The bonding wavefront can be facilitated, guided, and shaped by one or more various surface treatments on the applicant core 402 and the target core 404. The applicant core 402 can contact both the carrier structure 414 and the target core 404, and therefore can remain substantially stationary during the bonding process.

[0066] like Figure 4D As depicted, once the bubble 452 has a sufficient size or the contact area between the applicant die 402 and the target die 404 has a sufficiently large area, the applicant die 402 can be released from the carrier structure 414. The release of the applicant die 402 from the substrate allows gas to escape from the bubble 452. The applicant die 402 can fall flat onto the target die 404 (e.g., position 462), for example, due to the elastic constant of the applicant die 402 causing deformation of the applicant die 402 released by the bubble 452.

[0067] Figures 5A to 5D This is a schematic diagram illustrating an exemplary method for die bonding using radiation-mediated release and a flexible interlayer. Figures 5A to 5DThis is a cross-sectional view of bonding an applicant die (e.g., applicant die 502) to a target die (e.g., target die 504) via radiation-mediated release, in the case of, for example, a substantially non-flexible applicant die 502. Refer to the descriptions of "applicant die" and "target die". Figures 5A to 5D "Donor die" and "target die" are relative descriptive terms as used herein, and the donor die may alternatively be the target die and vice versa. The donor die may alternatively be the donor substrate, and the target die may alternatively be the target substrate, and the donor die may be bonded to the target substrate, the donor substrate may be bonded to the target substrate, or the donor substrate may be bonded to the target die. Multiple donor dies may be bonded to a single target die, and vice versa. Radiation-mediated release may be used with any suitable die bonding method, such as any of the methods previously described.

[0068] exist Figure 5A In this configuration, the main substrate 502 is supported by a carrier structure 514. The carrier structure 514 can be any suitable substrate for radiation-mediated release, such as those previously discussed... Figures 4A to 4D The carrier structure 414 is described. The main conductor core 502 can be non-flexible, such as due to the thickness of the main conductor core, the material of the main conductor core, etc. The main conductor core 502 can be placed on the flexible intermediary 570 (e.g., a layer). The flexible intermediary 570 can act as a flexible layer, such as behaving similarly to Figures 4A to 4D The fabrication core 402 (e.g., a flexible core). The fabrication core 502 can be bonded to the flexible intermediary 570 by any suitable means, such as by adhesive, electrostatic attraction, etc. The fabrication core 502 can be bonded to the flexible intermediary 570 at one or more locations, but otherwise free-floating. The fabrication core 502 can be lightly (e.g., detachably) bonded to the flexible intermediary 570 such that the fabrication core 502 can be peeled (e.g., separated) from the flexible intermediary 570 due to bending of the flexible intermediary 570. The flexible intermediary 570 can be optically opaque (including reflective type) such that radiation transmitted through the carrier structure 514 does not reach any adhesive between the flexible intermediary 570 and the fabrication core 502. In some embodiments, the flexible intermediary 570 can be bonded to the fabrication core 502 and the carrier structure 414 by the same method (e.g., by adhesive 550).

[0069] The flexible intermediary 570 is bonded to the carrier structure 414 by any suitable adhesive 550, such as previously mentioned. Figures 4A to 4DThe adhesive 450 is described. The application die 502 is aligned with the target die 504, which may be supported by the carrier structure 516. Alignment can be performed by any suitable method (such as any of the methods previously described). The alignment point 503 of the application die 502 can be aligned with the alignment point 505 of the target die 504 to achieve alignment at alignment point 507, as described above. Figure 5B As shown in the diagram. The donor die 502 can be prepared for bonding to the target die 504 (and vice versa) through atomic-level cleaning and flattening treatments, for example. When close (e.g., in contact), the donor die 502 and the target die 504 can be bonded to each other by van der Waals bonding. The donor die 502 and the target die 504 can then be annealed (e.g., heated) to produce or enhance the electrical bonding between regions of the donor die 502 and regions of the target die 504 (such as reference). Figures 1A to 1C (As described). The application tube spool 502 can be a substantially non-flexible spool. For example, the application tube spool 502 can have a thickness of 4 μm or more, 10 μm or more, 100 μm or more, 500 μm or more, 1000 μm or more, etc., wherein the thickness of the spool is considered to be inflexible or non-flexible can vary based on the spool material, spool dimensions (e.g., surface area), bending force, etc.

[0070] exist Figure 5B In this process, radiation 520 is applied to adhesive 550. Radiation 520 can be any suitable radiation, such as reference radiation. Figure 4BRadiation 520 is described as radiation 420. Radiation 520 can be a radiation pulse (e.g., emission of radiation) that can be applied to the adhesive 550 to initiate or continue the radiation-mediated bonding process. Radiation 520 can be part of a larger radiation pattern that may be non-uniform above the applicant core 502, above the carrier structure 514, etc. Radiation 520 can be directed toward the central portion of the applicant core, the edge of the applicant core, or a corner, etc. Radiation 520 can be a scanning beam, i.e., there is relative motion between radiation 520 and the applicant core 502. Radiation 520 can be variable, such as undergoing Gaussian intensity variations. Radiation 520 can be applied in a direction 522 that is substantially perpendicular (e.g., within 10 degrees) to the carrier structure 514 (e.g., substantially perpendicular to the plane of the applicant core 502 that contacts the flexible intermediary 570). In an embodiment, relative movement may exist between the radiator 520 and the spool 502 so that different portions of the facet of the spool 502 subsequently come into contact with the target die 504—effectively, “rolling” the spool onto the target die. This “rolling” can occur from one edge of the spool toward the other; for example, the flexible intermediary 570 (layer) may bend to allow an edge of the spool to contact the target die, and then bend further as there is relative displacement between the radiator and the spool, thereby causing another portion of the spool to contact the target die.

[0071] Applying radiation 520 to adhesive 550 can generate gas (or other volume expansion as previously described) “bubbles,” such as bubble 552. Bubble 552 can occupy the entire thickness of adhesive 550 (e.g., the entire adhesive layer can be broken down into gas) or a portion of the thickness of adhesive 550 (e.g., as shown). Bubble 552 can cause deformation of the back side 554 of flexible intermediary 570 (e.g., the surface of flexible intermediary 570 that contacts adhesive 550). Bubble 552 can also cause deformation of the front side 556 of flexible intermediary 570 (e.g., the surface of flexible intermediary 570 that contacts application mandrel 502). Deformation of flexible intermediary 570 can cause movement of application mandrel 502, such as toward target mandrel 504. Deformation of flexible intermediary 570 may cause a portion of flexible intermediary 570 to separate from application mandrel 502. Deformation of flexible intermediary 502 can cause the alignment point of application mandrel 502 (e.g., Figure 5A Alignment point 503) is close to the alignment point of the target die (e.g., Figure 5AAlignment point 505), for example alignment point 507. The amount of deformation of the flexible intermediary 570 can depend on the thickness of the adhesive 550 and the amount of adhesive 550 that decomposes into gas or expands in volume, as well as the thickness and size of the flexible intermediary. For example, a 3mm × 3mm flexible intermediary with a thickness of 1.5μm may experience (e.g., in the Z direction) bending up to 4μm due to the pressure of 1Pa generated in the bubble 552. Although the flexible intermediary 570 is depicted as having the same area as the application tube core 502, it may alternatively be smaller or larger than the application tube core 502.

[0072] like Figure 5C As shown, relative movement may exist between the radiation 520 and the surfaces of the flexible intermediary 570 and the adhesive 550 (e.g., movement of the transfer spot of the applicant die 502 and / or the radiation 520 in direction 524) to cause further decomposition or expansion of the adhesive 550 and increase the size of the bubble 552. As the bubble 552 increases, the flexible intermediary 570 can bend such that the applicant die 502 contacts the target die 504, for example, at alignment point 507. Once the applicant die 502 contacts the target die 504, a bonding wavefront can be emitted from the contact point at alignment point 508, resulting in the formation of van der Waals bonds between atoms on the surface of the applicant die 502 and the surface of the target die 504. The bonding wavefront can be facilitated, guided, and shaped by one or more various surface treatments on the applicant die 502 and the target die 504. In some embodiments, due to the non-flexible or non-bending nature of the actuator die 502, the actuator die 502 can simultaneously contact multiple, substantially most, or all of the contact points of the target die 504. In this case, multiple bonding wavefronts can be emitted from multiple contact points or even prevent bonding wavefronts due to the simultaneity of bonding. The actuator die 502 can contact both the flexible intermediary 570 and the target die 504, wherein the flexible intermediary contacts both the actuator die 502 and the carrier structure 514, and therefore the actuator die 502 may not be substantially free-floating during the bonding process.

[0073] In some embodiments, the flexible intermediary 570, which may be or is considered an actuator, displacement mechanism, or other similar device, includes a guide configured to guide the actuator die 502 toward the target die 504 (in this example, the recipient position) by being relatively flexible to bend toward the target die 504 for transfer, and relatively inflexible in other directions. The flexible intermediary 570 may be a layer or have other configurations. The flexible intermediary may include, for example, a foil layer. The flexible intermediary 570 is configured to be relatively flexible to bend toward (e.g., perpendicular to...) Figure 5CThe carrier structure 514 (vertical direction) bends towards the target die 504 in the direction 585 of the die-facing surface 587, and is relatively non-flexible in the direction 589 parallel to the die-facing surface 587 of the carrier structure 514. Advantageously, the flexible intermediary 570 allows the application die 502 to land on the target die 504 with greater accuracy than if the application die 502 did not utilize the flexible intermediary 570.

[0074] like Figure 5D As depicted, once the bubble 552 has a sufficient size or the contact area between the applicant die 502 and the target die 504 has a sufficiently large area, the flexible intermediary portion 570 can be released from the carrier structure 514. The release of the flexible intermediary portion 570 from the substrate allows gas to escape from the bubble 552. The applicant die 502 and the flexible intermediary portion 570 can fall flat onto the target die 504, for example, the elastic constant of the flexible intermediary portion 570 can cause the release of the applicant die 502 due to the bubble 552. The flexible intermediary portion 570 can be removed from the applicant die 502, for example, by dissolving residual adhesive or other bonding methods. The flexible intermediary portion 570 can alternatively or additionally remain on the applicant die 502, such as a passivation layer. In an embodiment, the intermediary portion 570 can remain attached to the carrier structure 514, and the applicant die 504 can be released from the intermediary portion 570.

[0075] Figure 6 The illustration shows an embodiment of an exemplary system 600 configured for die bonding using radiation-mediated release. System 600 includes: a structure 614 configured to hold one or more semiconductor donor dies 602, one or more radiation output devices 675, a processor system 685, a displacement mechanism 670, or other components. For example, structure 614 may be similar to or identical to the carrier structures 314, 414, or 514 described above. Radiation output devices 675 may be configured to provide radiation to the donor die. Figures 4A to 4D or Figures 5A to 5D The radiation 420 or 520 shown is similar to or the same as radiation 620 for radiation-mediated release. Radiation output device 675 is configured to cause radiation 620 to be provided to or near die 602. Radiation 620 is sufficient to cause die 602 to shift toward acceptor position 605 on target substrate 650 (e.g., a silicon wafer in this example, but target substrate 650 could also be a target die or other substrate as described herein). Target substrate 650 is formed by, for example, radiation 420 or 520. Figure 6The wafer stage is held in place by the support structure 616. The displacement mechanism 670 is configured to cause at least a portion of the die 602 to displace from the structure 614, thereby creating contact between a face of the die 602 and a corresponding receiving position 605 when the die 602 is held by the structure 614. In some embodiments, the displacement mechanism 670 may be or include the flexible intermediary 570 shown in FIG. 5 and described above, an actuator, or other components. The processor system 685 may include one or more processors or other components, in conjunction with... Figure 9 The processor or other components of the computer system shown and described below are similar to or the same. The processor system 685 is operatively (wirelessly or via cable) coupled to one or more radiating output devices 675, displacement mechanisms 670, support structures 616, or other components of system 600. The processor system 685 can control one or more bonding operations, control the interaction between components of system 600, or perform other functions as described herein.

[0076] In some embodiments, one or more radiation output devices 675 are configured to selectively apply radiation 620 to the die 602 or the corresponding acceptor location 605, or to selectively apply radiation 620 to the vicinity of the die 602 or the corresponding acceptor location 605 (but the direction to the acceptor location 605 is...). Figure 6 The image is not shown to prevent Figure 6 (To prevent confusion) and to adjust the respective die 602 or acceptor position 605 before bonding to enhance alignment between die 602 and acceptor position 605. In some embodiments, there may be one radiation output device 675. However, other embodiments may include two or more radiation output devices 675, which are positioned to effectively provide radiation to the applicant die 602, acceptor position 605, displacement mechanism 670, adhesive (e.g., as described above), or other parts of system 600. Selective application of radiation 620 may be configured (e.g., when acceptor position 605 includes a target die as described herein) to provide thermal or other stimulation configured to amplify the respective die 602 or acceptor position 605. In some embodiments, adjustment of the respective die 602 or acceptor position 605 includes changing the shape, size, position, or other characteristics of the respective die 602 or acceptor position 605. Figure 6 In the example shown, radiation 620 can be used to move 601 to the alignment point 603 of the recipient die 602, such that the alignment point 603 is aligned with the alignment point of the corresponding recipient position 605 (or vice versa, for example, if the recipient position 605 includes the target die).

[0077] In some embodiments, selectively applying radiation includes directing a uniform spot of radiation 620 to one or more specific corresponding regions of the die 602 or acceptor location 605. In some embodiments, selectively applying radiation includes generating a patterned beam of radiation 620, wherein specific portions of the patterned beam are configured to be incident on one or more specific corresponding regions of the die 602 or acceptor location 605. The patterned beam may include different intensities, different wavelengths, complex shapes, or other characteristics. In some embodiments, the selectively applied radiation 620 has a first wavelength configured to be absorbed by the die 602 or acceptor location 605 (e.g., for adjusting its size); and the radiation 620 that causes transfer in the die 602 (as described herein) has a different second wavelength. For example, the first wavelength may be longer than the second wavelength. The first and second wavelengths may correspond to different colors of light or have other differences.

[0078] As a practical example, a longer wavelength beam (i.e., a lower photon energy beam) can be used to heat the donor die 602. The wavelength can be determined such that light energy is absorbed by the donor die 602. This causes thermal expansion of the die 602. The light intensity determines the amount of expansion. The desired amount of expansion can be determined based on the position of measurement marks determined via image recognition of a pattern on the die 602 (as an exemplary measurement technique). The light intensity providing the desired expansion can be determined accordingly. If higher-order (e.g., more than two-dimensional symmetric expansion) correction is required, the pattern of light intensity can be adjusted on the surface of the die 602. As described above, the wavelength can be configured long enough that adjusting the dimensions of the donor die 602 does not cause a chemical reaction in the adhesive. A shorter wavelength beam applied later can be used to release the die 602 from the carrier structure 614 (as described herein).

[0079] Figure 7 This is a flowchart illustrating an exemplary method of die placement. Each of these operations is described in detail below. The operational intent of method 700 presented below is illustrative. In some embodiments, method 700 may be implemented using one or more additional operations not described and / or not using one or more of the operations discussed. Additionally, in Figure 7The order of operations of method 700 illustrated and described below is not intended to be limiting. In some embodiments, one or more portions of method 700 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing means (e.g., one or more processors). One or more processing means may include one or more means that perform some or all of the operations of method 700 in response to instructions stored electronically on an electronic storage medium. One or more processing means may include one or more means configured by hardware, firmware, and / or software to specifically perform one or more operations, such as those of method 700.

[0080] At operation 710, multiple donor die positions are obtained. The donor die positions can be obtained by measuring one or more positions of the donor die along one or more dimensions. The donor die can be located on or part of a donor substrate (e.g., a carrier structure, semiconductor substrate, etc.), and the positions of multiple donor dies relative to the donor substrate can be obtained. The positions of multiple donor dies can be measured relative to measurement marks. The positions of multiple donor dies can be measured in a plane (e.g., in the xy plane). The positions of multiple donor dies can also be measured in a plane via a first method and out of plane (e.g., in the Z direction) via a second method. For example, the positions of multiple donor dies can be measured in a plane based on one or more images. The positions of multiple donor dies can be obtained from a two-dimensional image showing the positions of the edges or corners of the donor die relative to the support structure or die actuator. The positions of multiple donor dies can be obtained based on one or more features (e.g., one or more electrically active regions) on the exposure surface of the donor die. These one or more features of the donor die can be used as alignment marks or reference marks. In some embodiments, alignment marks may be included as exposure features of the application tube die. Alignment marks may be specifically added for die bonding, or they may be alignment marks corresponding to previous manufacturing steps. Multiple application tube die locations may be measured or obtained from memory.

[0081] At operation 720, multiple target die positions are obtained. The target dies may be located on or part of a target substrate (e.g., a carrier structure, a semiconductor substrate, etc.), and multiple target die positions relative to each other on the target substrate can be obtained. The positions of the multiple target dies can be obtained by any suitable method, including any of the methods described with reference to operation 710.

[0082] At operation 730, an application die is selected from a plurality of application dies. The application die can be selected based on position (e.g., along a column, along a row), displacement (e.g., the application die closest to the ideal position), thickness (e.g., a thicker die can be placed before a thinner die, including if the application die comprises two or more types of dies), etc. The application die can have a corresponding target die, such as a target die at a corresponding position on a target substrate (e.g., a target die carrier structure). In some embodiments, the target die can be selected by any suitable method, and the application die is selected based on its correspondence with the selected target die. The application die and the target die can be combined such that the application die and its corresponding target die are separated by a distance traveled by the die placement method. The application die and the target die can be generally aligned (e.g., coarsely aligned), such as within a coarse alignment threshold. The application die and the target die can be kept adjacent by one or more substrates, chucks, actuators, adhesives, etc.

[0083] At operation 740, the relative position between the selected donor die and the corresponding target die is adjusted to achieve alignment between the donor die and the corresponding target die. Adjustment may include cases where the position is minimally or substantially not adjusted (e.g., after measurement or proximity) if the measured position corresponds to the target position within a threshold. In embodiments, the position of the donor die can be adjusted by the action of a die actuator, substrate holder, chuck, etc. The position of the donor die can be adjusted by the action of a substrate handling device. The position of the donor die can be adjusted in one or more directions (e.g., in the XY plane). Alternatively, or in addition to adjusting the position of the donor die, the position of the target die can also be adjusted by any suitable method, such as any of the methods previously described. Adjustment of the relative position between the donor die and the target die may include iterative measurements of the donor and / or target die positions, including iterative measurements as the adjustment occurs.

[0084] The position of the applicator die can be adjusted based on its alignment. The alignment position can be a target for placing the applicator die (e.g., a target location). The target (e.g., a target location) can be obtained, for example, from a measurement of the target die position at operation 720. The target can correspond to the position of the target die. The target can correspond to multiple positions on the target die. The target can be a position (e.g., a position in three dimensions such as along the X, Y, and Z axes, a position in six directions such as along the X, Y, and Z axes, and a position relative to rotational angles about those axes, etc.). The target can be a set of positions, such as two or more positions on the target die to which an area of ​​the applicator die will be bonded. Alternatively or additionally, the position of the target die can be adjusted based on its alignment. The alignment position can be a target for placing the applicator die (e.g., a target location). The target (e.g., a target location) can be obtained, for example, from a measurement of the applicator die position at operation 710. The target can correspond to the position of the applicator die. The target can correspond to multiple positions on the applicator die.

[0085] In some embodiments, operation 740 includes selectively applying radiation to a die or acceptor location (target die), or selectively applying radiation near the die or acceptor location (target die) to adjust the respective die or acceptor location (target die) prior to bonding to enhance alignment between the die and the acceptor location (target die). Selectively applying radiation can be configured to provide heat to expand the respective die. Adjustment of the respective die includes changing the shape, size, position, or other characteristics of the respective die.

[0086] In some embodiments, selectively applying radiation includes directing a uniform radiation spot to one or more specific corresponding regions of the die or acceptor location (target die). In some embodiments, selectively applying radiation includes generating a patterned radiation beam, wherein specific portions of the patterned beam are configured to irradiate one or more specific corresponding regions of the die. The patterned beam may include different intensities, different wavelengths, complex shapes, or other characteristics. In some embodiments, the selectively applied radiation has a first wavelength configured to be absorbed by the die or acceptor location; and the radiation causing die transfer (as described herein, e.g., see operation 750 described below) has a different second wavelength. For example, the first wavelength may be longer than the second wavelength. The first and second wavelengths may correspond to different colors of light or have other differences.

[0087] At operation 750, the selected donor die is placed on the corresponding target die. The donor die can be placed on the target die by any suitable method, such as by movement of a die actuator, by radiation-mediated bonding, by stamping, by electrostatic attraction, etc. When the donor die comes into contact with the target die, the donor die can undergo alignment, including self-alignment. When the donor die contacts the target die, the donor die can be bonded to the target die, for example, by van der Waals forces. In some embodiments, additional donor dies can be placed on the same or different target dies.

[0088] In some embodiments, a flexible intermediary layer (as described above, see [link to relevant documentation]) Figures 5A to 5D The device includes a guide configured to guide the die toward the recipient location (target die) by being relatively flexible to bend toward the recipient location for transfer, but relatively inflexible in other directions. A flexible interlayer is configured to be relatively flexible to bend toward the recipient location, for example, in a direction perpendicular to the die-facing surface of the donor substrate (e.g., a carrier substrate or other structure), and relatively inflexible in a direction parallel to the die-facing surface of the donor substrate.

[0089] At operation 760, it is determined whether an additional donor die is reserved for placement. If an additional donor die (e.g., on the donor substrate or substrate) is reserved for placement, the process continues to operation 730, where another donor die is selected. If no additional donor die is reserved for placement, the process continues to operation 770, where the bonding of multiple dies is completed.

[0090] In embodiments, when a donor die is placed on a target die, the specific donor die and the target die are bonded, for example, by intermolecular bonding. In embodiments, after the donor die is placed on the target die, the donor die is bonded to the target die, such as through annealing or other bonding processes. In embodiments, the bonding of the donor die and the target die is completed before the next donor die is placed on the target die. In embodiments, the bonding of the donor die and the target die is completed after multiple donor dies are placed on their respective target dies, for example, after all donor dies on the donor substrate are placed. In embodiments, the donor die placed on the target die is annealed to form or enhance electrical connections. In embodiments, the annealing of the specific donor die and the target die can be completed before the next donor die is placed on the target die. In embodiments, the annealing of the donor die and the target die is completed after multiple donor dies are placed on their respective target dies, for example, after all donor dies on the donor substrate are placed. The applicant die can be held against the target die during the bonding or annealing process. The applicant die and target die pair can be released from the substrate or other holding device before annealing or after annealing has occurred.

[0091] As described above, method 700 (and / or other methods and systems described herein) is configured for die placement.

[0092] Figure 8 This is a flowchart illustrating an exemplary method of radiation-mediated die release. Each of these operations is described in detail below. The operational intent of method 800 presented below is illustrative. In some embodiments, method 800 may be performed using one or more additional operations not described and / or one or more operations not discussed. Additionally, the operation of method 800 is... Figure 8 The order shown and described below is not intended to be limiting. In some embodiments, one or more portions of method 800 may be implemented in one or more processing means (e.g., one or more processors) in response to instructions electronically stored on an electronic storage medium. One or more processing means may include one or more means for performing some or all of the operations of method 800 in response to instructions electronically stored on an electronic storage medium. For example, one or more processing means may include one or more means configured by hardware, firmware, and / or software to specifically design for performing one or more operations of method 800.

[0093] At operation 810, an adhesive is used to place the application tube core onto the carrier structure. This adhesive can be converted into a gas or otherwise readily expands in volume. The application tube core can be any suitable application tube core, as previously discussed. The application tube core can be a flexible core. In some embodiments, the application tube core can be substantially non-flexible, and a flexible intermediary can be used between the application tube core and the adhesive, as previously discussed. Figures 5A to 5D The carrier structure can be any suitable structure, including structures that are completely or partially transparent to electromagnetic radiation, electrons, or particle beams, as previously discussed. The carrier structure can be made of a transparent material and / or have open areas to allow radiation to pass through. The adhesive can be any suitable adhesive, and any suitable adhesive can be volutely altered by applying radiation or radiation-associated heat (such as through phase transitions, decomposition, precipitation, etc.). The substrate core can be placed on the carrier structure by any suitable method, such as by pick-and-place tools, by cutting tools, etc.

[0094] At operation 820, the donor die is aligned with the target die. The donor die can be aligned with the target die based on measurements of the position of the donor die (e.g., relative to the carrier structure, the carrier structure's holder, etc.) and / or the position of the target die (e.g., relative to the carrier structure, the chuck, the semiconductor substrate in which the target die is formed, etc.). The donor die and the target die can be aligned by any suitable method, including any of the methods previously discussed.

[0095] For example, in some embodiments, operation 820 includes selectively applying radiation to the die or acceptor location, or selectively applying radiation near the die or acceptor location, to adjust the respective die or acceptor location prior to bonding to enhance alignment between the die and acceptor location. Selectively applying radiation can be configured to provide heat to widen the respective die or acceptor location. Adjustment of the respective die or acceptor location includes changing the shape, size, position, or other characteristics of the respective die or acceptor location.

[0096] In some embodiments, selectively applying radiation includes directing a uniform radiation spot to one or more specific corresponding regions of the die or acceptor location. In some embodiments, selectively applying radiation includes generating a patterned radiation beam, wherein specific portions of the patterned beam are configured to be incident on one or more specific corresponding regions of the die or acceptor location. The patterned beam may include different intensities, different wavelengths, complex shapes, or other characteristics. In some embodiments, the selectively applied radiation has a first wavelength configured to be absorbed by the die or acceptor location; and the radiation causing die transfer (as described herein, e.g., see operation 840 described below) has a different second wavelength. For example, the first wavelength may be longer than the second wavelength. The first and second wavelengths may correspond to different colors of light or have other differences.

[0097] At operation 830, the applicant spool and the target spool are brought adjacent to each other (e.g., by moving the applicant spool, by moving the target spool, or both). The applicant spool may be within 3 μm of the target spool, or within 1 μm of the target spool, or within 500 nm of the target spool, or within 200 nm of the target spool, or within 100 nm of the target spool, or within 50 nm of the target spool. The separation between the applicant spool and the target spool may depend on the amount of bending in the applicant spool (or flexible interposer). The applicant spool is held outside the range of van der Waals force attraction with the target spool.

[0098] At operation 840, radiation is supplied to the adhesive on the application mandrel (or flexible interposer) via a carrier structure. The radiation can be shaped to precisely position one application mandrel at a time. The radiation spot size can be substantially smaller than the size of the application mandrel. The radiation can be directed to the central portion of the application mandrel, the edge of the application mandrel, or a corner, etc. The radiation can move along the application mandrel. The radiation can be used to decompose the adhesive into at least a gaseous portion or otherwise expand its volume. The radiation can be used to change the adhesive from a solid or liquid to a gas. The radiation can be used to cause thermal expansion of the adhesive. The radiation can change the volume of the adhesive in areas where the area of ​​the adhesive is smaller than that of the target mandrel by any suitable means. In some embodiments, such as if the volume expansion is not accompanied by a gas phase, the radiation can change the volume of the adhesive in areas that may have the same or larger size as the application mandrel.

[0099] In some embodiments, the flexible interposer includes a guide configured to guide the die toward the recipient location by being relatively flexible to bend toward the recipient location for transfer, but relatively non-flexible in other directions. The flexible interposer is configured, for example, to be relatively flexible toward the recipient location in a direction perpendicular to the die-facing surface of the carrier structure, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

[0100] At operation 850, radiation is transmitted until the donor die contacts the target die. When the donor die contacts the target die, the bonding wavefront can extend across the region to achieve contact bonding between the donor and target dies via, for example, van der Waals forces. In embodiments, intermolecular bonding exists between the donor and target dies. The bonding efficiency between the donor and target dies can be affected by the smoothness (e.g., at the atomic level) and / or cleanliness (e.g., the cleanliness of dangling hydrogen bonds on the surface) of the donor and / or target dies. The combined donor and target dies can be annealed as described herein to create or enhance one or more electrical connections.

[0101] At operation 860, such as by repeating operation 820, the subsequent application main die can be bonded to the subsequent target die. The application main die and target die can then be bonded, including by electrical, annealing, or other methods as described herein.

[0102] As described above, method 800 (and / or other methods and systems described herein) is configured for radiation-mediated die release.

[0103] In embodiments, the techniques and apparatus described herein can be applied to die-to-die bonding, substrate-to-substrate bonding, die-to-substrate bonding, etc. For example, the techniques and apparatus described herein can be applied to bonding individual donor dies to individual target dies. In embodiments, the techniques and apparatus described herein can be applied to bonding groups of donor dies to one or more target dies at substantially the same time, or bonding groups of target dies to one or more donor dies at substantially the same time. In embodiments, the techniques and apparatus described herein can be applied to bonding one or more donor dies to a substrate comprising one or more target dies formed therein or on it, or bonding one or more target dies to a substrate comprising one or more donor dies formed therein or on it. In embodiments, the techniques and apparatus described herein can be applied to bonding a complete or partial substrate comprising donor dies to one or more target dies, or bonding a complete or partial substrate comprising target dies to one or more donor dies. Therefore, the techniques and apparatus described herein can be applied to virtually every form of die bonding, whether bonding dies individually, bonding dies in groups, or bonding dies as part of a complete or partial substrate.

[0104] It has been recognized that the collision velocity between the donor die and the acceptor wafer can be so high that the donor die may be damaged upon impact. In this embodiment, the intensity of the light source is varied over time (initially high intensity, then lower intensity) to reduce the velocity at which the donor die impacts the acceptor wafer. Once contact is made, the intensity can be increased to apply pressure to ensure proper bonding occurs between the donor die and the acceptor substrate (wafer). The same effect can be achieved by varying the spot size of the light source used in the process; initially, a larger spot may form a larger bubble, which can then be replaced with a smaller spot, which breaks down less material, or its primary effect may be heating the gas within the already formed bubble and causing it to expand (as opposed to expansion by breaking down material). The result of using this variation in light intensity or spot size is a reduction in the risk of damage to the donor die.

[0105] Furthermore, it has been recognized that the xy accuracy of the transfer of the die from the carrier to the acceptor may need improvement. In this embodiment, the pattern of the light source changes over time, causing the entire surface of the die to peel off from the carrier, and the die does not remain attached to one or more corners of the carrier. Once most of the die has been peeled off from the surface area of ​​the carrier, the same method is applied to peel the die off from the remaining area in a controlled manner. The advantage of this embodiment is that it provides better control over the xy displacement of the die during die deposition.

[0106] Figure 9This is a diagram of an exemplary computer system CS that can be used to implement one or more of the operations described herein. The computer system CS includes a bus BS or other communication mechanism for conveying information, and a processor PRO (or multiple processors) coupled to the bus BS to process information. The computer system CS also includes main memory MM, such as random access memory (RAM) or other dynamic memory, coupled to the bus BS to store information and instructions to be executed by the processor PRO. The main memory MM may also be used to store temporary variables or other intermediate information during the execution of instructions by the processor PRO. The computer system CS also includes a read-only memory (ROM) or other static storage device coupled to the bus BS to store static information and instructions for the processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to the bus BS to store information and instructions.

[0107] A computer system (CS) can be connected via a bus (BS) to a display (DS) for showing information to the computer user, such as a cathode ray tube (CRT), flat panel, or touch panel display. An input device (ID), including alphanumeric keys and other keys, is connected to the bus (BS) to transmit information and command selections to the processor (PRO). Another type of user input device is a cursor controller (CC) such as a mouse, trackball, or cursor direction keys, used to transmit directional information and command selections to the processor (PRO) and to control cursor movement on the display (DS). This input device typically has two degrees of freedom (DOF) on two axes (a first axis (e.g., x) and a second axis (e.g., y)), allowing the device to specify its position in a plane. Touch panel (screen) displays can also be used as input devices.

[0108] In some embodiments, multiple portions of one or more methods described herein can be executed by a computer system CS in response to a processor PRO executing one or more sequences of one or more instructions contained in main memory MM. These instructions may be read into main memory MM from another computer-readable medium, such as a storage device SD. Execution of the instruction sequence included in main memory MM causes processor PRO to perform one or more process steps (operations) described herein. One or more processors arranged in a multiprocessor configuration may also be used to execute the instruction sequence contained in main memory MM. In some embodiments, hard-wired circuitry may be used instead of or in combination with software instructions. Therefore, the description herein is not limited to any particular combination of hardware circuitry and software.

[0109] As used herein, the terms “computer-readable medium” and / or “machine-readable medium” refer to any medium that participates in providing instructions to a processor (PRO) for execution. Such media can take many forms, including, but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage devices (SD). Volatile media include dynamic memory, such as main memory (MM). Transmission media include coaxial cables, copper wires, and optical fibers, including wires including buses (BS). Transmission media can also take the form of sound waves or radiated waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as floppy disks, flexible disks, hard disks, magnetic tapes, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tapes, any other physical media with a perforated pattern, RAM, PROMs and EPROMs, FLASH-EPROMs, any other memory chips or cartridges. Non-transitory computer-readable media can have instructions recorded thereon. These instructions, when executed by a computer, can perform any of the operations described herein. For example, a temporary computer-readable medium may include a carrier wave or other medium that propagates electromagnetic signals.

[0110] The loading of one or more instructions, or a sequence thereof, onto a processor PRO for execution can involve various forms of computer-readable media. For example, initially, the instructions can be carried on the disk of a remote computer. The remote computer can load the instructions into its dynamic memory and transmit them via a telephone line using a modem. A modem local to the computer system CS can receive data over the telephone line and convert the data into an infrared signal using an infrared transmitter. An infrared detector connected to the bus BS can receive the data carried in the infrared signal and place the data on the bus BS. The bus BS carries the data to main memory MM, from which the processor PRO fetches and executes the instructions. The instructions received from main memory MM can optionally be stored on storage device SD before or after execution by the processor PRO.

[0111] The computer system CS may also include a communication interface CI connected to the bus BS. The communication interface CI provides a bidirectional data communication connection to a network link NDL, which is connected to a local area network (LAN). For example, the communication interface CI may be an Integrated Services Digital Network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, the communication interface CI may be a LAN card to provide a data communication connection to a compatible LAN. A wireless link may also be implemented. In any such implementation, the communication interface CI transmits and receives electrical, electromagnetic, or optical signals carrying digital data streams representing various types of information.

[0112] A network link (NDL) typically provides data communication with other data devices over one or more networks. For example, a network link NDL may provide a connection to a host computer (HC) via a local area network (LAN). This can include data communication services provided via a global packet data communication network (now commonly referred to as the "Internet" INT). A LAN (Internet) can use electrical, electromagnetic, or optical signals carrying digital data streams. Signals through various networks and on the network data link (NDL) via the communication interface (CI) are presented as exemplary carrier waves for transmitting information, carrying digital data to and from the computer system (CS).

[0113] A computer system (CS) can send and receive messages (including program code) via one or more networks, network data links (NDLs), and communication interfaces (CIs). In the Internet example, the host computer (HC) may transmit requested code for an application via the Internet (INT), network data links (NDLs), local area networks (LANs), and communication interfaces (CIs). For example, an application downloaded in this way can provide all or part of the methods described herein. The received code can be executed by the processor (PRO) after it is received, and / or stored in a storage device (SD) or other non-volatile memory for later execution. In this way, the computer system (CS) can obtain application code in carrier form.

[0114] The embodiments include aspects numbered as follows:

[0115] Aspect 1: A method comprising:

[0116] Providing semiconductor dies close to the acceptor location; and

[0117] Radiation is applied to the die or to the vicinity of the die to cause the die to shift toward the acceptor site, wherein the shifted die is bonded to the acceptor site by intermolecular bonding; and

[0118] Heating the die that is in contact with the recipient position to induce or improve electrical contact between the die and the recipient position.

[0119] Aspect 2: The method as described in any of the preceding aspects, wherein the radiation causes the die to bend before the die contacts the recipient position.

[0120] Aspect 3: The method as described in aspect 2, wherein the die is located on the carrier structure, and the bent die contacts the recipient position before the die is completely released from the carrier structure.

[0121] Aspect 4: The method as described in any of the preceding aspects, wherein the radiation is applied non-uniformly to or near the die, and the non-uniformly applied radiation is configured to cause the semiconductor die to roll onto the acceptor location.

[0122] Aspect 5: The method as described in any of the preceding aspects, wherein, when the radiation is applied, the die is bonded to the carrier structure.

[0123] Aspect 6: The method as described in any of the preceding aspects, wherein a plurality of dies for transfer are provided to a carrier structure.

[0124] Aspect 7: The method as described in aspect 6, wherein the radiation is provided to cause the transfer of two or more of the plurality of dies at substantially the same time.

[0125] Aspect 8: The method as described in aspect 6 or aspect 7 further includes: providing relative movement between the carrier structure and the receptor location to enable the transfer of a first die toward a first portion of the receptor location and the transfer of a second die toward a second portion of the receptor location, wherein the transfer of the first die and the transfer of the second die are time-separated.

[0126] Aspect 9: The method of any one of Aspects 6 to 8, wherein two or more of the plurality of dies are transferred at substantially the same location of the carrier structure relative to the receptor location.

[0127] Aspect 10: The method as described in any one of Aspects 1, 5, 6, 7, 8 or 9, wherein the die remains substantially flat during transfer to the recipient position.

[0128] Aspect 11: The method as described in any of the preceding aspects, wherein a flexible intermediary layer is provided between the die and the carrier structure holding the die.

[0129] Aspect 12: The method as described in aspect 11, wherein the radiation causes the flexible interlayer to bend before the die comes into contact with the receptor location.

[0130] Aspect 13: The method as described in aspect 11 or aspect 12, wherein the flexible interlayer includes a guide configured to guide the die toward the receptor location by being relatively flexible to bend toward the receptor location for transfer but relatively inflexible in other directions.

[0131] Aspect 14: The method as described in aspect 13, wherein the interposer is configured to be relatively flexible in a direction perpendicular to the die-facing surface of the carrier structure to bend toward the receptor location, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

[0132] Aspect 15: The method as described in any of the preceding aspects further comprises: selectively applying radiation to the die and / or acceptor locations prior to bonding, or selectively applying radiation to the vicinity of the die and / or acceptor locations, to adjust the respective die and / or acceptor locations to enhance alignment between the die and acceptor locations.

[0133] Aspect 16: The method as described in aspect 15, wherein selectively applying radiation is configured to provide heat to expand the corresponding die and / or receptor location.

[0134] Aspect 17: The method as described in aspect 15 or aspect 16, wherein adjusting the corresponding die and / or receptor position includes changing the shape, size, and / or position of the corresponding die and / or receptor position.

[0135] Aspect 18: The method as described in any one of Aspects 15 to 17, wherein selectively applying radiation comprises:

[0136] Guide a uniform radiation spot to one or more specific corresponding regions of the die and / or receptor location; and / or

[0137] A patterned radiation beam is generated, wherein specific portions of the patterned radiation beam are configured to be incident on one or more specific corresponding regions of the die and / or receiver location, and the patterned radiation beam includes different intensities, different wavelengths, and / or complex shapes.

[0138] Aspect 19: The method as described in any one of Aspects 15 to 18, wherein:

[0139] The selectively applied radiation has a first wavelength configured to be absorbed by the die and / or receptor location; and

[0140] The radiation that causes the transfer of the die has a different second wavelength.

[0141] Aspect 20: The method of aspect 19, wherein the first wavelength is longer than the second wavelength; and the first wavelength and the second wavelength correspond to different colors of light.

[0142] Aspect 21: A method comprising:

[0143] The semiconductor die is structurally located close to the acceptor site; and

[0144] This causes at least a portion of the die to shift from the structure, resulting in incomplete contact between the die face and the receptor location when the die is held by the structure.

[0145] Aspect 22: The method of aspect 21 further includes: irradiating the die located on or near the structure to cause the displacement of at least a portion of the die.

[0146] Aspect 23: The method as described in aspect 22, wherein there is a relative displacement between the irradiation and the die, so that different portions of the face of the die subsequently come into contact with the receptor location.

[0147] Aspect 24: The method as described in aspect 22 or aspect 23, wherein the radiation is applied non-uniformly to or near the die, and the non-uniformly applied radiation is configured to cause the semiconductor die to roll onto the acceptor location.

[0148] Aspect 25: The method of any one of aspects 21 to 24 further comprises: heating the die in contact with the receptor site to induce or improve electrical contact between the die and the receptor site.

[0149] Aspect 26: The method as described in any one of aspects 21 to 25, wherein the core is glued to the structure.

[0150] Aspect 27: The method of any one of aspects 21 to 26, wherein displacement of at least a portion of the die comprises bending the die.

[0151] Aspect 28: The method of any one of aspects 21 to 27, wherein a flexible interlayer is provided between the die and the carrier structure holding the die.

[0152] Aspect 29: The method of aspect 28, wherein the die remains substantially flat during transfer to the recipient location, and wherein causing displacement of at least a portion of the die includes causing bending of at least a portion of the flexible interlayer.

[0153] Aspect 30: The method as described in aspect 28 or aspect 29, wherein the flexible interlayer includes a guide configured to guide the die toward the receptor location by being relatively flexible to bend toward the receptor location for transfer but relatively inflexible in other directions.

[0154] Aspect 31: The method of aspect 30, wherein the interposer is configured to be relatively flexible in a direction perpendicular to the die-facing surface of the carrier structure to bend toward the receptor location, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

[0155] Aspect 32: The method of any one of aspects 21 to 31 further comprises: selectively applying radiation to the die and / or the acceptor site prior to bonding, or selectively applying radiation near the die and / or the acceptor site to adjust the respective die and / or acceptor sites to enhance alignment between the die and the acceptor site.

[0156] Aspect 33: The method as described in aspect 32, wherein selectively applying radiation is configured to provide heat to expand the location of the die and / or receiver.

[0157] Aspect 34: The method as described in aspect 32 or aspect 33, wherein adjusting the corresponding die and / or receptor position includes changing the shape, size, and / or position of the die and / or receptor position.

[0158] Aspect 35: The method as described in any one of aspects 32 to 34, wherein selectively applying radiation comprises:

[0159] Guide a uniform radiation spot to one or more specific corresponding regions of the die and / or receptor location; and / or

[0160] A patterned radiation beam is generated, wherein specific portions of the patterned radiation beam are configured to be incident on one or more specific corresponding regions of the die and / or receiver location, and the patterned radiation beam includes different intensities, different wavelengths, and / or complex shapes.

[0161] Aspect 36: The method as described in any one of aspects 32 to 35, wherein:

[0162] The selectively applied radiation has a first wavelength configured to be absorbed by the die and / or receptor location; and

[0163] The radiation that causes the transfer of the die has a different second wavelength.

[0164] Aspect 37: The method of aspect 36, wherein the first wavelength is longer than the second wavelength; and the first wavelength and the second wavelength correspond to different colors of light.

[0165] Aspect 38: A system comprising:

[0166] Configured to maintain the structure of the semiconductor die;

[0167] A radiation output section, the radiation output section being configured to provide radiation to the die; and

[0168] A processor system configured to provide radiation to the die sufficient to cause the die to shift toward the acceptor location, or to provide radiation near the die sufficient to cause the die to shift toward the acceptor location, such that the shifted die is bonded to the acceptor location by intermolecular bonding.

[0169] Aspect 39: The system as described in aspect 38, wherein the system is configured to bend the die before the die contacts the receptor location.

[0170] Aspect 40: The system as described in aspect 39, wherein the system is configured to contact the receptor location with a bent die before the die is fully released from the structure.

[0171] Aspect 41: A system as described in any one of Aspects 38 to 40, wherein the system is configured to apply the radiation non-uniformly to the die or to the vicinity of the die.

[0172] Aspect 42: The system as described in any one of aspects 38 to 41, wherein, when the radiation is applied, the die is bonded to the carrier structure.

[0173] Aspect 43: A system as described in any one of aspects 38 to 42, wherein the structure is configured to hold a plurality of dies for transfer.

[0174] Aspect 44: The system as described in aspect 43, wherein the system is configured to provide the radiation in order to substantially simultaneously cause the transfer of two or more of the plurality of dies.

[0175] Aspect 45: The system as described in aspect 43 or aspect 44 further includes an actuator for providing relative movement between the structure and the receptor location so as to enable temporal separation of two or more of the plurality of dies to separate multiple portions of the receptor location.

[0176] Aspect 46: The system as described in aspect 45, wherein the actuator includes a flexible interlayer, the flexible interlayer including a guide, the guide being configured to guide the die toward the receptor location by being relatively flexible to bend toward the receptor location for transfer but relatively inflexible in other directions.

[0177] Aspect 47: The system as described in aspect 46, wherein the interposer is configured to be relatively flexible in a direction perpendicular to the die-facing surface of the carrier structure to bend toward the receptor location, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

[0178] Aspect 48: The system of any one of aspects 38 to 47 further includes: selectively applying radiation to the die and / or the acceptor location or selectively applying radiation to the vicinity of the die and / or the acceptor location prior to bonding, to adjust the respective die and / or acceptor locations to enhance alignment between the die and the acceptor location.

[0179] Aspect 49: The system as described in aspect 48, wherein selectively applied radiation is configured to provide heat to expand the corresponding die and / or acceptor location.

[0180] Aspect 50: The system as described in aspect 48 or aspect 49, wherein adjusting the corresponding die and / or receptor position includes: changing the shape, size, and / or position of the corresponding die and / or receptor position.

[0181] Aspect 51: A system as described in any one of aspects 48 to 50, wherein selectively applying radiation comprises:

[0182] Guide a uniform radiation spot to one or more specific corresponding regions of the die and / or receptor location; and / or

[0183] A patterned radiation beam is generated, wherein specific portions of the patterned radiation beam are configured to be incident on one or more specific corresponding regions of the die and / or receiver location, and the patterned radiation beam includes different intensities, different wavelengths, and / or complex shapes.

[0184] Aspect 52: A system as described in any one of aspects 48 to 51, wherein:

[0185] The selectively applied radiation has a first wavelength configured to be absorbed by the die and / or receptor location; and

[0186] The radiation that causes the transfer of the die has a different second wavelength.

[0187] Aspect 53: The system as described in aspect 52, wherein the first wavelength is longer than the second wavelength; and the first wavelength and the second wavelength correspond to different colors of light.

[0188] Aspect 54: The system as described in any one of aspects 38 to 53 further includes a heating element configured to provide heating to the die in contact with the receptor location to induce or improve electrical contact between the die and the receptor location.

[0189] Aspect 55: A system comprising:

[0190] Structure, the structure being configured to maintain a semiconductor die in proximity to the acceptor location; and

[0191] A displacement mechanism configured to cause at least a portion of the die to shift from the structure, thereby causing incomplete contact between the face of the die and the receptor location when the die is held by the structure.

[0192] Aspect 56: The system as described in aspect 55, wherein the displacement mechanism is configured to bend the core.

[0193] Aspect 57: A system as described in aspect 55 or aspect 56, wherein the displacement mechanism is configured to provide radiation at or near the die on the structure to cause the displacement of the at least portion of the die.

[0194] Aspect 58: The system as described in aspect 57, wherein the system is configured to provide relative displacement between radiation and the die so that different portions of the face of the die subsequently come into contact with the receptor location.

[0195] Aspect 59: A system as described in aspect 57 or aspect 58, wherein the displacement mechanism is configured to apply the radiation non-uniformly to the die or to the vicinity of the die, the non-uniformly applied radiation being configured to cause the semiconductor die to roll onto the acceptor location.

[0196] Aspect 60: The system as described in any one of aspects 55 to 59 further includes a flexible intermediary layer between the die and the structure holding the die, wherein the flexible intermediary layer includes a guide configured to guide the die toward the receptor location by being relatively flexible to bend toward the receptor location for transfer but relatively inflexible in other directions.

[0197] Aspect 61: The system as described in aspect 60, wherein the interposer is configured to be relatively flexible in a direction perpendicular to the die-facing surface of the carrier structure to bend toward the receptor location, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

[0198] Aspect 62: The system of any one of aspects 55 to 61 further includes: selectively applying radiation to the die and / or the acceptor location or selectively applying radiation to the vicinity of the die and / or the acceptor location prior to bonding, to adjust the respective die and / or acceptor locations to enhance the alignment between the die and the acceptor location.

[0199] Aspect 63: The system as described in aspect 62, wherein selectively applied radiation is configured to provide heat to expand the location of the die and / or receiver.

[0200] Aspect 64: The system as described in aspect 62 or aspect 63, wherein adjusting the corresponding die and / or receptor position includes: changing the shape, size, and / or position of the die and / or receptor position.

[0201] Aspect 65: A system as described in any one of aspects 62 to 64, wherein selectively applying radiation comprises:

[0202] Guide a uniform radiation spot to one or more specific corresponding regions of the die and / or receptor location; and / or

[0203] A patterned radiation beam is generated, wherein specific portions of the patterned radiation beam are configured to be incident on one or more specific corresponding regions of the die and / or receiver location, and the patterned radiation beam includes different intensities, different wavelengths, and / or complex shapes.

[0204] Aspect 66: A system as described in any one of aspects 62 to 65, wherein:

[0205] The selectively applied radiation has a first wavelength configured to be absorbed by the die and / or receptor location; and

[0206] The radiation that causes the transfer of the die has a different second wavelength.

[0207] Aspect 67: The system as described in aspect 66, wherein the first wavelength is longer than the second wavelength; and the first wavelength and the second wavelength correspond to different colors of light.

[0208] Aspect 68: The system as described in any one of aspects 55 to 67 further includes a heater configured to heat the die in contact with the receptor location to induce or improve electrical contact between the die and the receptor location.

[0209] Aspect 69: The system as described in any one of aspects 55 to 68, wherein the core is glued to the carrier structure.

[0210] Aspect 70: A system configured to transfer a semiconductor die to the acceptor site during die bonding using radiation-induced positive transfer and intermolecular bonding between the die and the acceptor site.

[0211] Aspect 71: The system of aspect 70, further configured to provide annealing of the die and / or acceptor locations to provide or enhance electrical connection between the die and acceptor locations.

[0212] Aspect 72: A system configured to bend a semiconductor die on a carrier structure to allow contact between a portion of the die and a receptor location before the die is fully released from the carrier structure.

[0213] While the concepts disclosed herein can be used for fabrication on substrates such as silicon wafers, it should be understood that the disclosed concepts can be used with any type of fabrication system (e.g., those used for fabrication on substrates other than silicon wafers).

[0214] Furthermore, the disclosed combinations and sub-combinations of elements may include discrete embodiments. For example, one or more of the operations described above may be included in a separate embodiment, or one or more of the operations described above may be included together in the same embodiment.

[0215] The above description is intended to be illustrative, not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made as described without departing from the scope of the claims set forth below.

Claims

1. A method comprising: A semiconductor die is provided on a carrier structure near the acceptor location, wherein a flexible interposer is provided between the semiconductor die and the carrier structure holding the die; Radiation is applied to or near the semiconductor die to cause the semiconductor die to shift toward the acceptor site, wherein the shifted semiconductor die is bonded to the acceptor site by intermolecular bonding, and wherein the radiation causes the flexible interlayer to bend before the semiconductor die contacts the acceptor site; and Heating the semiconductor die in contact with the acceptor location to induce or improve electrical contact between the semiconductor die and the acceptor location.

2. The method as described in claim 1, wherein, The flexible interposer includes a guide configured to guide the semiconductor die toward the recipient location by being relatively flexible to bend toward the recipient location for transfer, but relatively non-flexible in other directions.

3. The method of claim 2, wherein, The interposer is configured to be relatively flexible in a direction perpendicular to the die-facing surface of the carrier structure, bending toward the acceptor location, and relatively non-flexible in a direction parallel to the die-facing surface of the carrier structure.

4. The method of claim 1, wherein, The radiation causes the die to bend before it comes into contact with the recipient location.

5. The method of claim 4, wherein, The semiconductor die contacts the acceptor location before the semiconductor die is completely released from the carrier structure.

6. The method of claim 1, wherein, The radiation is applied non-uniformly to or near the semiconductor die, and the non-uniformly applied radiation is configured to cause the semiconductor die to roll over at the recipient location.

7. The method of claim 1, wherein, The semiconductor die is bonded to the carrier structure while the radiation is applied.

8. The method of claim 1, wherein, Multiple semiconductor dies are provided to the carrier structure for transfer.

9. The method of claim 8, wherein, The radiation is provided so that two or more of the plurality of semiconductor dies are transferred substantially simultaneously.

10. The method of claim 1, further comprising: The relative movement between the carrier structure and the recipient position is provided to enable the transfer of a first semiconductor die toward a first portion of the recipient position and the transfer of a second semiconductor die toward a second portion of the recipient position, wherein the transfer of the first semiconductor die and the transfer of the second semiconductor die are time-separated.

11. The method of claim 1, further comprising: Radiation may be selectively applied to the semiconductor die and / or the acceptor site prior to bonding, or radiation may be selectively applied to the vicinity of the semiconductor die and / or the acceptor site prior to bonding, to adjust the respective semiconductor die and / or acceptor sites to enhance the alignment between the semiconductor die and the acceptor site.

12. The method of claim 11, wherein, Selective radiation is configured to provide heat to expand the corresponding semiconductor die and / or acceptor location.

13. The method of claim 11, wherein, The adjustment to the corresponding semiconductor die and / or acceptor location includes: changing the shape, size, and / or position of the corresponding semiconductor die and / or acceptor location.

14. A system comprising: Configured to maintain the structure of the die; A radiation output device configured to provide radiation to the die; An actuator for providing relative movement between the structure and a recipient position to achieve a transfer of the die to the recipient position, wherein the actuator includes a flexible interlayer, the flexible interlayer including a guide, the guide being configured to guide the die toward the recipient position by being relatively flexible to bend toward the recipient position for transfer but relatively non-flexible in other directions; as well as A processor system configured to provide the radiation to or near the die, such that the die is moved toward the acceptor site such that the moved die is bonded to the acceptor site by intermolecular bonding.

15. The system of claim 14, wherein, The interlayer is configured to be relatively flexible in the direction perpendicular to the die-facing surface of the structure, bending toward the recipient location, and relatively non-flexible in the direction parallel to the die-facing surface of the carrier structure.

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