Systems and methods for stress release in die bonding

Abstract

A system comprising: a directed emission system configured to induce stress features in a semiconductor die; and a processor system configured to: obtain a pattern of stress features configured to alter a deformation of the semiconductor die; and cause the directed emission system to generate stress features in the semiconductor die based on the pattern of stress features, wherein the directed emission system comprises a femtosecond laser system, wherein the semiconductor die is a semiconductor die bonded to another semiconductor die, and wherein the deformation is caused at least in part by stress induced by the bonding.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to European application 23220057.6, filed on 22 December 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure generally relates to methods and systems for stress relief in die bonding. Background Technology

[0004] In the manufacturing process of integrated circuits (ICs), multiple finished or unfinished ICs (e.g., complete wafers, diced wafers, partially diced wafers, chips, dies, etc.) can be placed in contact, stacked, bonded, or otherwise connected (e.g., to heterogeneous or homogeneous devices) at various stages of the manufacturing process. Heterogeneous integration (e.g., the integration of different circuits or other devices) can rely on the connection of specific portions (e.g., conductive contact elements) of multiple dies, where these specific portions can be aligned in three-dimensional space to ensure functional connectivity. The alignment of these dies, which may have multiple manufacturing layers, different critical dimensions, different nodes, packages, etc., may require techniques different from those used for photolithography during manufacturing. Additionally, errors may be introduced within the die itself due to processing (e.g., differences from the planned layout) (e.g., imaging errors, patterning errors, etc.), including errors introduced within the die itself due to die bonding (e.g., pattern deformation caused by stress such as thermal deformation, clamping variations, etc.). One or more devices may be used to correct (e.g., at least partially, if not entirely) one or more errors, including correction before and / or after die bonding. As the physical size of IC components continues to shrink and their structures become increasingly complex, integration accuracy and throughput become more critical. For applications such as heterogeneous integration, accurate and rapid die placement relative to each other may be desirable, which may necessitate reducing and / or correcting errors. In the context of semiconductor manufacturing, improvements in die placement and alignment (e.g., improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration capabilities. Summary of the Invention

[0005] According to an embodiment, a system is provided, comprising: a directional emission system configured to induce stress features in a semiconductor die; and a processor system configured to: obtain a pattern of the stress features, the pattern of the stress features being configured to alter deformation of the semiconductor die; and cause the directional emission system to generate stress features in the semiconductor die based on the pattern of the stress features, wherein the directional emission system includes a femtosecond laser system, wherein the semiconductor die is a semiconductor die bonded to another semiconductor die, and wherein the deformation is at least partially caused by stress induced by the bonding.

[0006] According to an embodiment, a method is provided, comprising: generating a pattern of stress features configured to alter the positions of a plurality of fabricated features of a semiconductor die; applying at least a portion of the pattern of stress features to the semiconductor die to adjust the positions of the plurality of fabricated features; and bonding the semiconductor die to another semiconductor die, wherein applying at least a portion of the pattern of stress features compensates for deformation caused by stress at least partially resulting from the bonding. Attached Figure Description

[0007] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate one or more embodiments and explain these embodiments together with the description. Embodiments of the invention will now be described only by way of example with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts, and in the drawings:

[0008] Figures 1A to 1D This is a schematic diagram illustrating an exemplary die bonding method according to one or more embodiments.

[0009] Figures 2A to 2F This is a schematic diagram illustrating an example method of die placement according to one or more embodiments.

[0010] Figures 3A to 3J This is a schematic diagram illustrating a portion of an example device for die bonding according to one or more embodiments.

[0011] Figure 4 This is a schematic diagram illustrating the relationship between measurement and positioning modification systems according to one or more embodiments.

[0012] Figure 5 This is a schematic diagram of a portion of an example device for stress relief and / or initiation in one or more dies, according to one or more embodiments.

[0013] Figure 6This is a flowchart illustrating an exemplary method for modifying core stress according to one or more embodiments.

[0014] Figure 7 This is a flowchart illustrating an exemplary method of die placement according to one or more embodiments.

[0015] Figure 8 It is an exemplary representation of the deformation, pattern of stress features, and correction of the deformation by applying the pattern of stress features according to one or more embodiments.

[0016] Figures 9A to 9B This is a schematic diagram illustrating the correction of feature positions by applying a pattern of stress features to an exemplary die according to one or more embodiments.

[0017] Figure 10 This is a block diagram of an example computer system according to one or more embodiments of the present disclosure. Detailed Implementation

[0018] Embodiments of this disclosure are described in detail with reference to the accompanying drawings, which are provided as illustrative examples to enable those skilled in the art to practice this disclosure. It is important to note that the following drawings and examples are not intended to limit the scope of this disclosure to a single embodiment, but rather to enable other embodiments by means of substitutions of some or all of the described or illustrated elements. Furthermore, where certain components of this disclosure can be implemented partially or entirely using known components, only those portions of such known components necessary for understanding this disclosure will be described, and detailed descriptions of other portions of such known components will be omitted to avoid obscuring this disclosure. Unless otherwise specified herein, those skilled in the art will understand that embodiments described as implemented in software are not intended to be limited thereto, but may include embodiments implemented in hardware or a combination of software and hardware, and vice versa. Embodiments showing a singular number of components in this specification should not be considered limiting; rather, unless expressly stated otherwise herein, this disclosure is intended to cover other embodiments including a plurality of identical components, and vice versa. Furthermore, the applicant does not intend any terminology in this specification or claims to be of an uncommon or particular meaning unless so expressly stated. In addition, this disclosure covers current and future known equivalents of known components mentioned herein with the aid of illustrations.

[0019] While specific references may be made herein to the manufacture of ICs, it should be clearly understood that the descriptions herein have many other possible applications. For example, they can be used to manufacture integrated optical systems, guide and detection patterns for magnetic domain memory, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in the art will understand that in the context of these alternative applications, any use of the terms "wafer" or "die" herein should be considered interchangeable with the more general terms "substrate" and "target portion," respectively. The term "wafer" can generally be used to refer to a large manufacturing unit (which may be the largest manufacturing unit), while the term "die" can be used to refer to a smaller manufacturing unit that may correspond to a lithographic pattern, a portion of a lithographic pattern, multiple lithographic patterns, etc. "Die" can correspond to a portion of a "wafer," i.e., a "die" can be produced by cutting or otherwise dividing a "wafer." The term "die" should be considered interchangeable with the terms chip, chiplet, or other terms used for IC partitioning. While one or more substrates / wafers herein are depicted as having a circular shape, they can have any shape, including rectangular, and dies can have any shape. While one or more dies herein are depicted as having a rectangular shape, they may have any shape, including circular. Unless otherwise indicated, as used throughout this application, “or” takes on a non-exclusive meaning, such as encompassing both “and” and “or”. The terms “each,” “each,” “all,” “corresponding,” “separate,” and other relational terms substantially encompass “each,” “each,” “all,” etc., including cases where a relationship is not one-to-one or excludes every possible item. For example, “each” may exclude items such as those determined to be defective during testing. “Each” may exclude unused items, such as edge items. “All” may exclude items such as excess items. “Corresponding” may not require items to correspond in a perfectly one-to-one manner. For example, a first item may correspond to two second items, or vice versa. In some cases, “separate” may refer to multiple items, such as each item A having a separate item B, where item A may have two items B.

[0020] For reference Figures 1A to 1DThis is a schematic diagram illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted relative to a reference axis system, which is consistent throughout the schematic illustration. The reference axis is provided for ease of description only and should not be considered limiting. Alternatively, the included methods and apparatus may be described with reference to different axis systems (e.g., cylindrical coordinates, polar coordinates, etc.), different origins (e.g., the origin in the donor die, the origin in the target, the origin between the donor die and the target, etc.), or different orientations. The reference axis system is selected such that the manufacturing plane of the die (i.e., the substrate surface) lies in the XY plane, and wherein the manufacturing direction is parallel or antiparallel to the Z-axis for both the donor die and the target location.

[0021] like Figures 1A to 1D The exemplary die bonding method shown herein may involve a donor die 102 and a target die 104. In this document, for ease of description, the terms "donor" and "target" are used. It should be understood that the terms "donor" and "target" are provided by reference and are relative descriptions, and an element described as corresponding to a "donor" may alternatively correspond to a "target," and vice versa. The target die may also be, or alternatively, referred to as an acceptor die. Furthermore, although in Figure 1A Only one donor die and one target die are depicted, but it should be understood that multiple such dies may exist, and multiple donor dies may be bonded substantially simultaneously with multiple target dies, for example, where multiple dies are still part of a substrate (all or part) on which the dies are formed.

[0022] The donor die 102 may have one or more electrically active regions 106, as shown on the alignment surface of the donor die 102. The one or more electrically active regions 106 may be conductive, such as metallic. The one or more electrically active regions 106 may correspond to one or more vias (e.g., one or more through-silicon vias (TSVs)), one or more electrical contact lines, one or more contact pads, one or more encapsulation pads, or other conductive regions. The donor die 102 may have one or more electrically inert regions (e.g., electrically insulating regions) outside the one or more electrically active regions 106 (as shown on the alignment surface of the donor die 102). The one or more electrically active regions 106 may be recessed relative to one or more other surfaces of the donor die 102 (as illustrated). The one or more electrically active regions 106 may correspond to one or more contacts (e.g., to the source, to the drain, to the gate, etc.) to one or more electrical devices (not shown) within the donor die 102. Similarly, the target die 104 may have one or more electroactive regions 108, which may have one or more properties similar to those of one or more electroactive regions 106.

[0023] The donor die 102 may also or alternatively have one or more doped regions 110, such as those recessed below the alignment surface of the donor die 102. Although the term "doped" is used, it should be understood that one or more doped regions 110 can be any region that has one or more electrical characteristics different from the bulk of the substrate (e.g., a silicon wafer) during the manufacturing process. One or more doped regions 110 may correspond to the source, drain, gate, ground, or other regions of a circuit that are doped or otherwise modified (e.g., by implantation, oxide growth, thin film deposition, etc.) to have electrical characteristics different from the bulk of the substrate. One or more doped regions 110 may include one or more conductive layers (e.g., one or more heavily doped or conductive layers) and / or one or more insulating layers (e.g., one or more oxide layers). The donor die 102 may have one or more undoped regions (e.g., regions where the substrate retains the characteristics of the host substrate) outside of one or more doped regions 110 (e.g., on the alignment surface of the donor die 102). The one or more doped regions 110 may be recessed, buried, coplanar (as shown), etc., relative to one or more other surfaces of the donor die 102. The one or more doped regions 110 may correspond to one or more regions of one or more electrical devices within the donor die 102 (e.g., corresponding to one or more source regions, one or more drain regions, one or more gate regions, one or more dielectric regions, etc.), or correspond to one or more regions of one or more electrical devices that can be formed across both the donor die 102 and the acceptor die 104 when they are bonded. Similarly, the target die 104 may have one or more doped regions 112, which may have one or more properties similar to those of the one or more doped regions 110.

[0024] like Figure 1A and Figure 1BAs illustrated, an exemplary die bonding method may include aligning at least one of the electroactive regions 106 and / or doped regions 110 of a donor die 102 with at least one of the electroactive regions 108 and / or doped regions 112 of a target die 104. The exemplary die bonding method may include contacting the donor die 102 with the target die 104 while maintaining, for example, alignment between one or more electroactive regions 106 and one or more electroactive regions 108, such that one or more electroactive regions 106 and one or more electroactive regions 108 can be coupled for cross-die electrical communication. The exemplary die bonding method may include aligning one or more doped regions 110 of the donor die 102 with one or more doped regions 112 of the target die 104. Alignment may encompass contacting one or more edges of the respective regions, aligning one or more edges of the respective regions, having overlap, having non-overlap, or any other suitable alignment scheme. In some embodiments, alignment may encompass correcting the position of one or more regions of the die (e.g., the electroactive region 106 and / or doped region 110 of donor die 102, and / or the electroactive region 108 and / or doped region 112 of target die 104) through stress initiation, stress relief, etc. In some embodiments, alignment may encompass correcting deformation (e.g., placement error) in one or more dies (e.g., donor die 102 and / or target die 104), substrate, etc., through stress initiation, stress relief, etc. Exemplary die bonding methods may include applying or maintaining pressure between donor die 102 and target die 104 while bonding those present between donor die 102 and target die 104. Donor die 102 may be supported by a carrier structure 114, which may be a substrate that is transparent or transmissive to a range of radiation (e.g., infrared radiation, a portion of the spectrum, etc.). Similarly, the target die 104 may be supported by a carrier structure 116, which may or may not be transparent or transmissive to a certain range of radiation. Alternatively, the target die 104 (possibly together with the carrier structure) may be part of an uncuttered or partially diced target wafer. Alignment may be complicated by multiple layers of the donor die 102 or the target die 104, which may be optically opaque.

[0025] Figure 1A and Figure 1B A cross-sectional view depicting a portion of an exemplary die bonding method shows the relative positioning between a donor die 102 and a target die 104. Figure 1AAs shown, the donor die 102 and the target die 104 can be joined together along the Z-axis, while the position of the donor die 102 or the target die 104 can be adjusted in the XY plane (e.g., perpendicular to the nearest Z-axis) to improve the alignment between the donor die 102 and the target die 104. Figure 1B As shown, alignment can be achieved, for example, between one or more electroactive regions 106 and one or more electroactive regions 108 and / or between one or more doped regions 110 of the donor die 102 and one or more doped regions 112 of the target die 104.

[0026] Once aligned, the donor die 102 and the target die 104 are bonded together. In embodiments, the bonding is a direct or fusion bonding (e.g., involving van der Waals forces). In embodiments, the bonding is an intermolecular bonding, such as van der Waals bonding. In embodiments, the bonding may include covalent, ionic, or metallic (e.g., chemical) bonding. In embodiments, bonding is aided by a material (e.g., a suitable bonding or adhesive material) (e.g., in gaseous or liquid form) applied to the alignment surfaces of the donor die 102 and / or the target die 104 or provided to the gap between the donor die 102 and the target die 104. In some embodiments, the physical contact between the donor die 102 and the target die 104 may include bonding, such as through a bonding wavefront generated by contact (or atomic level proximity) of surfaces prepared for hydrogen bonding.

[0027] like Figure 1B As shown, donor die 102 and target die 104 can be annealed after contact, as depicted by the wavy lines (although wavy lines are shown here at both donor die 102 and target die 104, it is not necessary to provide annealing agent at both donor die 102 and target die 104, nor is it necessary to apply annealing agent in one or more of the shown directions). Annealing can be or can include thermal annealing, electrical annealing, electrostatic processes, etc. In some embodiments, annealing can include annealing within the plane of the bonded (or protruding) area and / or annealing of one or more recessed areas, which can increase the fill volume in the recessed areas (e.g., through thermal expansion, capillary forces, etc.) and can promote physical contact and bonding of previously uncontacted areas. Figure 1CAs shown, annealing can cause physical or chemical changes, such as in one or more electroactive regions 106 of the donor die 102 or one or more electroactive regions 108 of the target die 104, which can promote or improve physical or electrical contact between the electroactive regions 106 and 108. Annealing can therefore produce or enhance electrical connectivity (e.g., integration) between the elements of the donor die 102 and the target die 104. This electrical connectivity still occurs even if the electroactive regions 106 and 108 differ, for example, having different recess depths, being made of different materials, having different dimensions, etc. In the embodiment, relative to Figure 1A The described prior bonding may be temporary during one or more portions of the annealing process, wherein the annealing process forms a tight connection between the donor die 102 and the target die 104. In embodiments, annealing may occur in the system in which the bonding takes place. In embodiments, annealing may occur in a system separate from the system in which the bonding takes place, for example, where the donor die and the target die are transported from the bonding system to an annealing system, which may include one or more heating elements (e.g., one or more electric heating elements, one or more elements for providing radiant heating, etc.) to provide heat for annealing.

[0028] Once the donor die 102 is bonded to the target die 104, the carrier structure 114 can be removed, such as... Figure 1B As shown in the diagram. Alternatively, the carrier structure 116 can then be removed. Alternatively, the carrier structure 116 can be removed once the donor die 102 and the target die 104 have been annealed, as shown in the diagram. Figure 1C As shown in the diagram. Alternatively, the carrier structure 114 may then be removed.

[0029] Figure 1D A plan view depicting an exemplary die bonding method according to this disclosure. (See diagram below.) Figure 1DAs shown, donor die 102 and target die 104 may have one or more alignment marks along the XY plane to facilitate alignment of the dies as a whole. Alignment marks in the XY plane (e.g., one or more alignment marks 120 on donor die 102 or one or more alignment marks 122 on target die 104) reduce the area available for use in a circuit system. One or more alignment marks may be placed in scrap areas, such as areas between chips, which may be destroyed (e.g., removed) during dicing. Dicing as used herein refers to mechanically dividing a region of substrate (e.g., a fabrication cell) into smaller regions (e.g., dies or chips) that may include one or more operational units (e.g., logic devices, memory cells, etc.). Dicing can be performed using any suitable method, such as scribing and breaking, mechanical cutting, laser dicing, etc., and may destroy non-zero linewidth portions of the substrate volume when separating the dies (e.g., grinding into powder or otherwise rendering them inoperable for circuit system placement). Alignment marks can be fabricated additively or subtractively, such as by etching or deposition in the Z direction. Alignment marks 120 and 122 may be the same or different. Alignment marks 120 and 122 can be multi-directional alignment marks, i.e., capable of determining alignment in more than one direction, such as bi-directional alignment marks, examples of which are shown in [examples would be inserted here]. Figure 1D Alignment mark 120 is shown as 120. Alignment mark 120 and / or alignment mark 122 can be fine alignment marks, such as those used for alignment on the μm scale. Alignment mark 120 can be located on donor die 102, while target die 104 can have alignment mark 122 located in a waste region, or vice versa. Alternatively or additionally, one or more electroactive regions and / or doped regions of donor die 102 or one or more electroactive regions and / or doped regions of target die 104 ( Figure 1D (not shown in the image) or other surface features can be used as a reference (e.g., alignment marks) for aligning the donor die 102 and / or the target die 104.

[0030] The donor die 102 and the target die 104 can be aligned in up to three dimensions before or during contact between the donor die 102 and the target die 104. For example, when the donor die 102 contacts the target die 104, the donor die 102 or the target die 104 can be positioned in the xy plane. The donor die 102 or the target die 104 can be positioned by the operation of a die actuator or other die-level element (such as by a piezoelectric stepper element) or by the operation of a chuck or other carrier structure-level element (such as by a motor or other actuator). The position of the donor die 102 or the target die 104 can be adjusted relative to up to six degrees of freedom. For example, given an origin at the center portion of the donor die 102, the donor die 102 can be positioned by movement along the x-axis (e.g., in the positive or negative x direction), along the y-axis (e.g., in the positive or negative y direction), and along the z-axis (e.g., in the positive or negative z direction). The donor die 102 can also be rotatably positioned relative to each of those axes, such as rotating relative to the X-axis, the Y-axis, and the Z-axis. That is, the donor die 102 can be positioned by free movement within a space occupied by six different types of movement (where the movements listed above are provided as examples, but the movements can be described by other axes). Of course, the target die 104 can be positioned alone or in combination with the positioning of the donor die 102. Unless the situation requires otherwise, positioning or position adjustment herein includes displacement, rotation, or any combination thereof.

[0031] Deformation (e.g., placement error) of the donor die 102 and / or target die 104, or one or more substrates including the donor die 102 or target die 104, can be corrected in up to three dimensions before or after contact between the donor die 102 and the target die 104. For example, the donor die 102 or target die 104 may have one or more stress features induced in the buried layer of the die, in the top layer of the die, etc., which may cause a volume change in the die. This volume change may cause a corresponding change in the position of one or more surface features of the die (e.g., donor die 102 or target die 104). In some embodiments, the volume change may be an increase in volume. In some embodiments, the volume change may be a decrease. In some embodiments, multiple stress features may be applied, for example, in a pattern of stress features. In some embodiments, the positional changes of one or more surface features may be cumulative, as increasing with the number of stress features across the die or substrate surface.

[0032] The position of features on the donor die 102 or target die 104 can be adjusted relative to up to six degrees of freedom. For example, given an origin at the center of the donor die 102, the position of a feature of the donor die 102 can be corrected by applying stress features (such as by creating an out-of-plane volume increase) along the X, Y, and Z directions. The donor die 102 can also be corrected in a rotational manner relative to each of those directions; for example, a feature can be rotated relative to the X-axis, the Y-axis, and the Z-axis. That is, the features of the donor die 102 can be corrected by applying a pattern of stress features, which can produce corrections as adjustments corresponding to free movement in the space occupied by six different types of movement (where the adjustments listed above are provided as examples, but which can be described by other axes or directions). Of course, the target die 104 can be corrected alone or in combination with the positioning of the donor die 102. Unless otherwise required by the context, the correction or adjustment of feature positions in this document includes displacement, rotation, or any combination thereof.

[0033] In some embodiments, the donor die 102 and the target die 104 may be measured relative to a reference plane or structure (e.g., the XY plane), including relative to the same reference plane or structure, but the donor die 102 or the target die 104 may be flipped (before or after measurement) so that the manufacturing surfaces of the donor die 102 and the target die 104 may be bonded (see, for example...). Figure 1D (Top view). One or more alignment marks (e.g., alignment mark 120 and alignment mark 122) may be located on the fabricated surfaces of the donor die 102 and the target die 104, respectively. In some embodiments, the donor die 102 and / or the target die may be corrected or deformed relative to the planned feature positions of the donor die 102 and the target die, respectively. In some embodiments, deformed features in the donor die 102 and / or the target die 104 may be determined based on the measured positions of their features (e.g., surface features such as the electroactive regions 106 and / or doped regions 110 of the donor die 102, and / or the electroactive regions 108 and / or doped regions 112 of the target die 104), respectively. Once the donor die 102 or the target die 104 is flipped, one or more alignment marks may become invisible to alignment measurement tools (e.g., due to the opacity of the die). Therefore, the alignment of the flipped die can be performed based on the previously measured position of the die (e.g., one or more alignment marks of the die) relative to the structure (e.g., donor die 102 relative to carrier structure 114 or target die 104 relative to carrier structure 116).

[0034] Figures 2A to 2FThis is a schematic diagram illustrating an example method of die placement. References are made to "donor die" (and "donor substrate" comprising multiple "donor dies") and "target die" (and "target substrate" comprising multiple "target dies") for description. Figures 2A to 2F The terms are relative descriptors, and the donor die is used instead of the target die, and vice versa. Descriptions relative to donor and target dies. Figures 2A to 2F The donor die and the target die can be in the donor substrate or the target substrate, wherein the “substrate” can include multiple “dies”, including uncut (e.g., unseparated) dies in the form of all or part of a semiconductor substrate. Figures 2A to 2F A cross-sectional view showing the placement of donor dies (e.g., donor dies 202A, 202B, 202C) on target dies (e.g., target dies 204A and target dies 204B). In some embodiments, this can be performed continuously. Figures 2A to 2F The process is described as multiple steps occurring approximately simultaneously. In some embodiments, these steps can be performed approximately simultaneously. Figures 2A to 2F The process is described as a series of steps occurring sequentially. In some embodiments, multiple donor dies may be aligned or placed on their corresponding target dies substantially simultaneously, including donor dies that are close to (including adjacent) or far from (e.g., not adjacent but within the same target substrate). In some embodiments, the steps may be performed in a different order.

[0035] Figure 2A This is a cross-sectional view of donor dies 202A to 202C to be placed on target dies 204A to 204B. Donor dies 202A to 202C are supported by carrier structure 214. Donor dies 202A to 202C can be bonded to carrier structure 214 in any suitable manner, such as by vacuum bonding, electrostatic adsorption, intermolecular bonding, mechanical interlocking, surface reaction, static friction, gravity, etc. Donor dies 202A to 202C can be bonded to carrier structure 214 using an adhesive (e.g., glue) such as an organic polymer adhesive. Carrier structure 214 can be a transparent substrate, such as glass, sapphire, polymer, etc. Donor dies 202A to 202C can be placed on carrier structure 214 by any suitable method, such as by a pick-and-place tool. Carrier structure 214 can be supported by a chuck or any other suitable support structure.

[0036] Target dies 204A to 204B are supported by support structure 216. In embodiments, target dies 204A to 204B may be a portion of an uncut or partially cut target substrate. Target dies 204A to 204B may be bonded to support structure 216 in any suitable manner, such as by vacuum bonding, electrostatic adsorption, intermolecular bonding, mechanical interlocking, surface reaction, static friction, gravity, etc. Target dies 204A to 204B may be bonded to support structure 216 using an adhesive (e.g., glue) such as an organic polymer adhesive. In embodiments where, for example, target dies 204A to 204B are cut dies, the support structure may be a carrier structure (e.g., like carrier structure 214) and may be a transparent substrate, such as a glass, sapphire, polymer, etc. Target dies 204A to 204B may be placed on support structure 216 by any suitable method, such as by a pick-and-place tool. The support structure 216 may be a chuck or any other suitable structure, or may be supported by a chuck or any other suitable structure.

[0037] Prior to alignment, including before placing the donor dies (e.g., donor dies 202A to 202C) and / or target dies (e.g., target dies 204A and 204B) onto support structures 214 and / or 216, or while the donor dies (e.g., donor dies 202A to 202C) and / or target dies (e.g., target dies 204A and 204B) are held by support structures 214 and / or 216, the donor dies 202A to 202C and target dies 204A to 204B can be aligned, for example, by applying a pattern of stress characteristics. The donor dies 202A to 202C and target dies 204A to 204B can be aligned by applying a pattern of stress characteristics such as stress release, stress induction, causing one or more volume changes, causing changes in the characteristic positions of the dies, etc.

[0038] Donor dies 202A to 202C and target dies 204A to 204B can be aligned with each other at alignment points 203A and 205A (for donor dies 202A and target dies 204A), alignment points 203B and 205B (for donor dies 202B and target dies 204B), and alignment points 203C and 205C (for donor dies 202C and target dies 204B). In some embodiments, multiple donor dies can be placed on a single target die, and vice versa, as depending on an integrated target. Alignment points 203A to 203C are depicted for donor dies 202A to 202C, while alignment points 205A to 205C are depicted for target dies 204A to 204B. These alignment points are provided only for ease of description and do not need to be physical features. Multiple alignment points may exist for each die. Alignment points can be alignment marks (e.g., Figure 1DAlignment marks), die edges, die corners, die edges, or other features on the die surface. Alignment points can be used to align donor dies with target dies, such as by measuring the position of each alignment point and then adjusting the position of the donor and / or target die, such as by moving the carrier structure supporting the die, to align the alignment points of the donor die with the alignment points of the target die (or vice versa). Alignment points can be directly aligned with each other (e.g., as shown in the image). Figures 2A to 2F As depicted in [the text]. In some embodiments, alignment points may be aligned relative to each other (e.g., in a predetermined relationship, such as being separated by vectors), as in [the text]. Figure 1D As depicted at the bottom, the alignment marks do not overlap.

[0039] exist Figure 2A In this context, the carrier structure 214 (and / or structure 216) may be positioned, for example, in the XY plane to align the alignment point 203A of the donor die 202A with the alignment point 205A of the target die 204A.

[0040] exist Figure 2B In this configuration, the donor die 202A can be released from the carrier structure 214 via any suitable mechanism, such as release mechanism 230A. The donor die 202A is engaged with the target die 204A at alignment point 207A. Release of the donor die 202A can be facilitated by gravity, electrostatic force, physical force, etc. Any suitable alignment mechanism can assist in aligning the donor die 202A and the target die 204A at alignment point 207A (which represents...). Figure 2A Alignment at a combination of alignment points 203A and 205A, the alignment mechanism including self-alignment (e.g., attracting a region of the donor die 202A to a corresponding region of the target die 204A). In one embodiment, the release occurs when the donor die 202A (at least partially) contacts the target die 204A. In another embodiment, the release occurs before the donor die 202A contacts the target die 204A.

[0041] exist Figure 2CIn this configuration, carrier structure 214 and (alternatively or additionally) structure 216 can be moved to align another donor die (e.g., donor die 202C) with another target die (e.g., target die 204B). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on measurements of the relative positions of the alignment points (such as using alignment marks or features on the die or carrier structure, using the position of alignment points on another donor or target die, etc.). The alignment of alignment point 203C (of donor die 202C) with alignment point 205C (of target die 204B) can be based on one or more approximately simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. Although only the alignment of a single donor die (e.g., donor die 202C) with a target die (e.g., target die 204B) is depicted, the alignment of one or more sets of donor and target dies can occur substantially simultaneously, such as when the alignment points of multiple donor dies are aligned with the alignment points of multiple target dies given the relative positions of carrier structure 214 and support structure 216. However, the ability to place multiple donor dies substantially simultaneously may depend on the ability of the donor die placement and release mechanism on carrier structure 214 to release multiple donor dies.

[0042] exist Figure 2D In this configuration, the donor die 202C can be released from the carrier structure 214 via any suitable mechanism, such as release mechanism 230C. The donor die 202C is engaged with the target die 204B at alignment point 207C. Release of the donor die 202C can be facilitated by gravity, electrostatic force, physical force, etc. Any suitable alignment mechanism can assist in aligning the donor die 202C and the target die 204B at alignment point 207C (which represents...). Figure 2A Alignment at a combination of alignment points 203C and 205C, the alignment mechanism including self-alignment. In one embodiment, the release occurs when the donor die 202B (at least partially) contacts the target die 204B. In another embodiment, the release occurs before the donor die 202B contacts the target die 204B.

[0043] exist Figure 2EIn this configuration, carrier structure 214 and (alternatively or additionally) structure 216 can be moved to align another donor die (e.g., donor die 202B) with another target die (e.g., target die 204B). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on prior measurements of the relative positions of the alignment points (such as using alignment marks on the die or carrier structure, using alignment points on another donor or target die, etc.). Alignment of alignment point 203B (of donor die 202B) with alignment point 205B (of target die 204B) can be based on one or more approximately simultaneous measurements of the relative positions of the alignment points, such as using alignment marks or features on the die or carrier structure, using alignment targets or features of another donor or target die, etc. As depicted, donor dies 202B and 202C are aligned with the same target die (e.g., target die 204B). In some embodiments, donor dies are placed on target dies in a substantially one-to-one relationship (e.g., as depicted for donor die 202A and target die 204A). In some embodiments, multiple donor dies (or target dies) may be placed on the same target die (or donor die). In some embodiments, multiple donor dies (or target dies) may be placed on uncut (e.g., unseparated) target dies (or donor dies), such as on all or a portion of a substrate including the target die (or donor die). In some embodiments, donor dies may be placed on a target die having multiple dies, including stacked (e.g., bonded) dies, such as in a three-layer die-bonded stack.

[0044] exist Figure 2F In this configuration, the donor die 202B can be released from the carrier structure 214 via any suitable mechanism, such as release mechanism 230B. The donor die 202B is engaged with the target die 204B at alignment point 207B. Release of the donor die 202B can be facilitated by gravity, electrostatic force, physical force, etc. Any suitable alignment mechanism can assist in aligning the donor die 202B and the target die 204B at alignment point 207B (which represents...). Figure 2A Alignment at a combination of alignment points 203B and 205B, the alignment mechanism including self-alignment. In one embodiment, the release occurs when the donor die 202B (at least partially) contacts the target die 204B. In another embodiment, the release occurs before the donor die 202B contacts the target die 204B.

[0045] Figures 3A to 3J This is a schematic diagram of a portion of an example device used for die bonding. Refer to "donor die" and "target die" for description. Figures 3A to 3J"Donor die" and "target die" are relative descriptive terms as used herein, and a donor die may alternatively be a target die, and vice versa. Figure 3A , Figure 3C , Figure 3E , Figure 3G and Figure 3I Each of these is a plan view of the device during the placement of the donor die onto the target die. Figure 3B , Figure 3D , Figure 3F , Figure 3H and Figure 3J Each of these figures is a cross-sectional view of the device during the placement of a donor die onto a target die. The views of the device in the various figures represent different operations of the device, but operations depicted as occurring in different figures may occur at different times or alternatively be performed simultaneously, and operations depicted as occurring in the same figure may alternatively be performed individually or at different times. The donor substrate 300 and target substrate 350 are depicted as circular, but alternatively can be any suitable shape, including rectangular, square, etc. The donor substrate 300 (and target substrate 350) can be a substrate on which or on which a donor die (target die) has been formed. The donor substrate 300 (target substrate 350) can be a “reconstructed wafer” in which the donor die (target die) (or other different portions of the semiconductor substrate) is arranged or supported on a carrier structure, for example, in a position suitable for die bonding. Therefore, the donor substrate 300 (target substrate 350) can be a carrier structure and a donor die (target die), wherein the donor die (target die) can be held (e.g., bonded) to the carrier structure by any suitable method, such as by gravity, by an adhesive (e.g., an organic polymer adhesive), by electrostatic force, etc. The donor substrate 300 (target substrate 350) can include previously tested donor dies (target dies), such as those tested through failure analysis or other post-manufacturing tests. The donor substrate 300 (target substrate 350) can include donor dies (target dies) from the same or different semiconductor substrates (e.g., manufacturing substrates), including donor dies (target dies) of different types, sizes, etc. The donor substrate 300 (target substrate 350) can have donor dies (target dies) placed on the donor substrate 300 (target substrate 350) by any suitable method such as a pick-and-place tool. The donor substrate 300 (target substrate 350) can be supported by a carrier structure, vacuum chuck, electrostatic chuck, etc., on a top side (e.g., the fabrication surface) or a back side (e.g., the body substrate or carrier structure surface), or by different surfaces at various points. The donor substrate 300 or donor die (target substrate 350 or target die) can have fabricated devices, such as through-silicon vias (TSVs), contact pads, etc., on multiple surfaces, such that both the top side and the back side are fabrication surfaces.

[0046] exist Figure 3A In this embodiment, a donor substrate 300 can be placed on a substrate chuck 320A. The substrate chuck 320A can be a suitable substrate chuck to support the donor substrate 300 or a carrier structure of the donor substrate 300 in the form of a semiconductor substrate. The substrate chuck 320A can be supported by a support structure 322A. The support structure 322A can be a movable support structure that can move in the XY plane, such as moving from a first position where the donor substrate 300 is received by the substrate chuck 320A to a second position where the donor substrate 300 can be measured. The substrate chuck 320A can include (e.g., support) one or more die actuators or other mechanical or electrical actuators that can move the donor die or donor substrate 300 in one or more dimensions, including in the XY plane, in the Z direction, rotationally, etc. The substrate chuck 320A can have one or more alignment marks to allow a camera or other measurement system to track the position of the substrate chuck 320A. The substrate chuck 320A may have multiple sets of alignment marks, such as coarse alignment marks and / or fine alignment marks. The substrate chuck 320A can be moved from one location to another, or moved in free space, by actions such as those performed by a support structure 322A. The support structure 322A can be configured to move in multiple directions and at multiple scales (e.g., with coarse and fine step sizes), such as by multiple motors or steppers. The support structure 322A can be initiated by a controller of the example device, wherein the controller of the example device (not depicted) can also control the placement of the donor substrate 300 on the substrate chuck 320A and other operations described herein.

[0047] The substrate chuck 320A may have measurement points (or alignment points) identified by cross-shaped measurement marks 327 and circular zero measurement marks 328, which are provided as examples only and any suitable zero measurement marks may be used. The measurement points may be used to place the donor substrate 300 on the substrate chuck 320A, such as during the movement of the substrate onto the chuck (e.g., by inserting the donor substrate using a substrate delivery device). The measurement points may be used to measure the relative position of the donor die of the donor substrate 300 when the donor substrate 300 is placed on the substrate chuck 320A. The placement of the donor die may be measured relative to the measurement points with an accuracy up to nm. The measurement results of the position of the donor die after its placement may be obtained from any suitable measurement system, such as optical microscopy, reflectometry, etc.

[0048] The position of the donor die or its features can be corrected based on measurements of the position of the die and / or its features relative to measurement points (e.g., cross-shaped measurement markers 327 and / or circular zero measurement markers 328), for example, by applying a pattern of stress features. The position of the donor die or its features can also be corrected based on measurements of deformation of the position of the die and / or its features, said measurements being based on the planned layout of the donor die or its features. The position of the donor die or its features can also be corrected based on measurements of deformation of the position of the die and / or its features, said measurements being based on measurements of stress in the die or the substrate including the die, for example, stress can be determined by interferometry, beam imaging, electron beam imaging, etc. The position of the donor die or its features can be corrected, and then the position of the donor die or its features can be remeasured, including iteratively applying a pattern of stress features multiple times until the deformation and / or error of the position of the donor die or its features is below a threshold. The donor die can be calibrated when it is on the substrate chuck 320A or at any other suitable location, including before the donor die is loaded onto the substrate chuck 320A.

[0049] Figure 3A A further substrate chuck 320B on support structure 322B is also depicted. Substrate chuck 320B can be any suitable substrate chuck, such as being substantially the same as substrate chuck 320A. Support structure 322B can be any suitable support structure, such as being substantially the same as support structure 322A. In some embodiments, substrate chuck 320B and substrate chuck 320A can be substantially indistinguishable. In some embodiments, support structure 322B and support structure 322A can be substantially indistinguishable. Although two substrate chucks and two support structures are depicted, in some embodiments, more or fewer substrate chucks and support structures may be present in the device. Operations depicted as being performed by substrate chuck 320B (substrate chuck 320A) can alternatively or additionally be performed by any suitable substrate chuck. Similarly, operations depicted as being performed by support structure 322B (support structure 322A) can alternatively or additionally be performed by any suitable support structure.

[0050] Figure 3A Also depicted is a flipper 330. The flipper 330 can be, for example, around... Figure 3A Any suitable device for flipping the longitudinal axis or planar surface of the donor substrate 300 (e.g., donor substrate 300) as depicted. Reference will be made to... Figure 3E and Figure 3F The flipper 330 is described in more detail.

[0051] exist Figure 3BThe figure depicts a cross-sectional view of a donor substrate 300. The donor substrate 300 includes a carrier structure 314 supporting one or more donor dies (e.g., donor dies 302A to 302C). The substrate may have one or more alignment points, such as alignment point 315, for measuring the relative positions of the donor dies 302A to 302C with respect to the carrier structure. The donor dies may have alignment points, such as alignment points 303A to 303C for the donor dies 302A to 302C respectively. For ease of description, alignment points are provided as schematic representations in these figures and may be any suitable alignment point, including alignment marks, fabricated features, edge features, etc., as previously described. Although the donor substrate 300 is in a substrate chuck (e.g., Figure 3A The position of the donor die (e.g., donor dies 302A to 302C) is measured on the substrate chuck 320A, but may be measured by means of a measuring tool 340A. The position can be measured as an absolute position, a relative position, a position relative to other dies, a position relative to an alignment point on the substrate, etc. The measured position can be stored by the device's controller, for example, for later positioning of the donor substrate 300. The measuring tool 340A can be a camera, including a still camera, a video camera, etc. The measuring tool 340A can be any suitable tool for measuring the position of the donor die, measuring the position of the alignment point of the donor die, measuring the position of the alignment mark of the donor die, etc.

[0052] exist Figure 3C In this configuration, the donor substrate 300 is supported by a substrate chuck 320A, which is supported by a support structure 322A. Once the position of the donor die is measured, the substrate chuck 320A can be moved, such as to a position other than the measurement location. The support structure 322A can be moved (e.g., along direction 324) to the location of support structure 322B, while the support structure 322B can be moved (e.g., along direction 323) to the location of support structure 322A. These locations are provided as examples, and the support structures can be moved to different locations. For example, in some embodiments, the support structure 322B can be moved to a loading position to receive a target substrate (e.g., target substrate 350). The substrate chuck 320A can then occupy another location in the device (e.g., a bonding position, a flip position, etc.). After the position of the donor die is measured (e.g., at...), the substrate chuck 320A... Figure 3B The position to which the flipper 330 is moved (after the measurement depicted in the figure) can be configured to allow the flipper 330 to receive the donor substrate 300 from the substrate chuck 320A.

[0053] exist Figure 3D In the middle, the donor substrate 300 is depicted moving to the point where... Figure 3B The location outside the measurement position. Movement can correspond to... Figure 3CFor example, the donor substrate 300 moves in direction 324 by means of the movement of the support structure 322A. This figure is provided to show the continuity of the die bonding process in both plan and cross-sectional views, but may be related to… Figure 3C or Figure 3E The processes described in the text occur approximately simultaneously, wherein steps that are described as occurring separately (including sequentially) can be performed approximately simultaneously, as previously described.

[0054] exist Figure 3E In this configuration, the target substrate 350 can be placed on a substrate chuck 320B. The substrate chuck 320B can be any suitable substrate chuck as previously described. The substrate chuck can be supported by a support structure 322B, which can be any suitable support structure as previously described.

[0055] exist Figure 3E In this process, the donor substrate 300 can be transferred to the flipper 330. The flipper 330 can receive (e.g., acquire) the donor substrate from the substrate chuck 320A, such as by using an edge jig, a vacuum jig, a fork, etc. The flipper 330 can hold the donor substrate through one or more edges (e.g., one or more edges of the carrier structure 314) or one or more sides (e.g., the back side of the carrier structure 314 that does not support the donor die). The flipper 330 can rotate the donor substrate 300 inverted (e.g., relative to the direction of gravity). The flipper 330 can hold the donor substrate 300 inverted (e.g., opposite) relative to the XY plane previously occupied by the donor substrate 300 or in any other suitable orientation. The flipper 330 can hold the donor substrate 300 or place the donor substrate 300 in a support structure such that the donor substrate 300 faces the plane of the target substrate 350. The flipper 330 can rotate or displace the donor substrate 300 in the XY plane, and can also move or rotate the donor substrate 300 outside the XY plane. The flipper 330 can be any suitable rotation or translation device.

[0056] exist Figure 3F The figure depicts a cross-sectional view of a target substrate 350. The target substrate 350 includes a carrier structure 316 supporting one or more target dies (e.g., target dies 304A to 304C). The substrate may have one or more alignment points, such as alignment point 317. The target dies may have alignment points, such as alignment points 305A to 305C for target dies 304A to 304C respectively. For ease of description, alignment points are provided as schematic representations in these figures and may be any suitable alignment point, including alignment marks, fabricated features, edge features, etc., as previously described. Although the target substrate 350 is in a substrate chuck (e.g., Figure 3EThe location of one or more target dies (e.g., target dies 304A to 304C) is measured, for example, on the substrate chuck 320B, but using a measurement tool 340B. The measurement tool 340B can be used to measure the position of one or more donor dies (e.g., on the substrate chuck 320B). Figure 3B The measuring tool 340B may be the same as or a different measuring tool than the measuring tool 340A for measuring the position of the donor dies 302A to 302C. Compared to the measuring tool 340A, the measuring tool 340B can measure a different number of positions, substantially different positions (e.g., arranged on the target substrate 300 in a manner different from the positions measured on the donor substrate 300 by the measuring tool 340A), different positions relative to the dies (e.g., donor dies 302A to 302C relative to target dies 304A to 304C), etc. These positions can be measured as absolute positions, relative positions, positions relative to other dies, positions relative to alignment points on the substrate, etc. The measured positions can be stored by the device's controller, such as for later positioning of the target substrate 350. The measuring tool 340B may be a camera, including a still camera, a video camera, etc. The measuring tool 340B may be any suitable tool for measuring the position of the donor dies, measuring the position of the alignment points of the donor dies, measuring the position of alignment marks on the donor dies, etc. The target substrate 350 may be attributed to deformation caused by substrate chuck holding, etc. The measurement tool 340B also enables the determination of the deformation of the target substrate by measuring the location. The controller can determine the deformation of the target substrate 350 based on those measurement locations (e.g., according to curve fitting, using a physical deformation model, etc.).

[0057] The position of a target die or a feature of a target die can be corrected based on measurements of the position of the die and / or die features relative to a measurement point (e.g., alignment point 317), for example, by applying a pattern of stress features. The position of a target die or a feature of a target die can also be corrected based on measurements of deformation of the position of the die and / or die features, said measurements being based on a planned layout of the target die or the feature of the target die. This can be based on references such as those previously cited. Figure 3AThe position of the target die or its features is corrected by measuring the position of the donor die or its features as described. In some embodiments, the positions of the donor die and / or its features and the target die and / or its features can be adjusted together, such as matching the deformation in the donor die with the deformation in the target die, so that the donor die and the target die can still be aligned even without deformation. The position of the target die or its features can be corrected based on measurements of deformation of the position of the die and / or its features, said measurements being based on measurements of stress in the die or the substrate including the die, for example, stress can be determined by interferometry, beam imaging, electron beam imaging, etc. The position of the target die or its features can be corrected, and then the position of the target die or its features can be remeasured, including iteratively applying a pattern of stress features multiple times until the deformation and / or error of the position of the target die or its features is below a threshold. The target die can be calibrated when it is on the substrate chuck 320A or at any other suitable location, including before it is loaded onto the substrate chuck 320B.

[0058] exist Figure 3F In this configuration, the donor substrate 300 is supported by a bonding support structure 332. The bonding support structure 332 can be (…). Figure 3E A portion of the flipper 330, or donor substrate 300, can be placed in the bonding support structure 332 via the flipper 330. The bonding support structure 332 can hold the donor substrate 300 relative to the plane of the target substrate 350. The bonding support structure 332 can hold the donor substrate via a carrier structure 314, including through one or more edges of the carrier structure 314. While in the bonding support structure 332, the position of the donor substrate 300 can be measured, for example, by a measurement tool 340C, to achieve, for example, relative positioning between the donor substrate 300 and the target substrate 350. The measurement tool 340C can be any suitable measurement tool. The measurement tool 340C can measure the position of the donor die (e.g., donor dies 302A to 302C), the position of the alignment point 315, etc. Measurement tool 340C can measure significantly fewer locations than measurement tools 340A or 340B, and the controller can determine the location of the target substrate 350 based on those fewer locations (e.g., based on curve fitting, using a physical deformation model, etc.). The controller can also determine the location of the target substrate 350 based on donor dies 302A to 302C (such as those from...). Figure 3BThe updated position of the donor die (e.g., donor dies 302A to 302C) is determined by a combination of the measured position of the donor die and the measured position of the donor substrate 300. The donor substrate 300 may be attributed to deformation caused by substrate chuck holding, movement of the flipper 330, suspension from the bonding support structure 332, etc. The measurement tool 340C also enables the determination of the deformation of the donor substrate by measuring the position. As mentioned above, the measurement tool 340C can measure significantly fewer positions than the measurement tools 340A and 340B, and the controller can determine the deformation of the donor substrate 300 based on those fewer positions than those measured by the measurement tool 340A on the donor substrate 300 or by the measurement tool 340B on the target substrate 350 (e.g., based on curve fitting, using a solid deformation model, etc.).

[0059] exist Figure 3G In this configuration, the target substrate 350 is supported by a substrate chuck 320B, which is in turn supported by a support structure 322B. Once the position of the target die is measured, the substrate chuck 320B can be moved to engage with the substrate chuck supported by a flipper (e.g., by a...). Figure 3F The donor substrate 300 is aligned with the bonding support structure 332. Support structure 322B can be moved (e.g., along direction 326) to the position of support structure 322A, while support structure 322A can be moved (e.g., along direction 325) to the position of support structure 322B. These positions are provided as examples, and the support structures can be moved to different positions. For example, in some embodiments, support structure 322A can be moved to a loading position to receive an additional target substrate (e.g., target substrate 350). Substrate chuck 320B can then occupy another position in the device (e.g., a bonding position). Substrate chuck 320B is used after measuring the position of the target die (e.g., at...). Figure 3F The position moved (after the measurement depicted) can be configured to place the donor die of the donor substrate 300 onto the target die of the target substrate 350. The substrate chuck 320B can be aligned with the donor substrate 300 in the flipper 330, which can be held above the plane of the substrate chuck 320B (e.g., in...). Figure 3G As depicted in the top-to-bottom view, the donor substrate 300 is at least partially above the plane of the substrate chuck 320B (e.g., obscuring the substrate chuck 320A).

[0060] exist Figure 3H In this configuration, the donor substrate 300 is aligned with the target substrate 350. The donor substrate 300 can be aligned with the target substrate 350 by moving the bonding support structure 332, for example, in either direction or orientation 333. The target substrate 350 can be aligned via a substrate chuck (e.g., Figure 3GThe substrate chuck 320B) or support structure (e.g., Figure 3G The support structure 322B moves to align with the donor substrate 300. The donor substrate 300 and the target substrate 350 can be aligned with each other, including by both coarse and fine alignment, such as by aligning the relative positions of one or more alignment points (e.g., alignment point 315 of the donor substrate 300 and alignment point 317 of the target substrate 350). In some embodiments, the donor substrate 300 and the target substrate 350 can be aligned, such as by coarse alignment. In some embodiments, once the donor substrate 300 and the target substrate 350 are aligned, one or more donor dies of the donor substrate 300 can be aligned with one or more target dies of the target substrate 350. Figure 3H The alignment of the donor die 302B and the target die 304B is depicted (e.g., alignment point 303B of the donor die 302B and alignment point 305B of the target die 304B). Once the donor die and the target die are aligned, the donor die can be placed on the target die by any suitable method (e.g., die actuator activation, gravitational acceleration, electrostatic actuation, etc.).

[0061] exist Figure 3I In this process, an additional donor substrate (e.g., donor substrate 300-2 having carrier structure 314-2) is placed on substrate chuck 320A for additional placement of the donor die on the target die. In some embodiments, the additional donor substrate can be placed on substrate chuck 320A after the substrate of the previous donor substrate has been removed from substrate chuck 320A, for example, after the substrate of the donor substrate has been removed from flipper 330 and said substrate has been repositioned on substrate chuck 320A. In some embodiments, the previous donor substrate can be removed from flipper 330, for example, by removing it from flipper to an additional substrate chuck (not depicted) or by any other suitable removal process, without resorting to substrate chuck 320A. The additional donor substrate can be placed on substrate chuck 320A after the previous donor substrate has been received by flipper 330 or at any time when substrate chuck 320A (or another substrate chuck) is idle. The additional donor substrate (e.g., donor substrate 300-2) may be substantially the same as or different from the previous donor substrate (e.g., donor substrate 300). For example, by means of placement on an additional target substrate (not depicted), donor substrate 300-2 can be processed by placing the donor die on the target die as previously described. Figures 3A to 3H The process continues as described. The donor substrate 300-2 can be placed on the substrate chuck 320A, while (as approximately simultaneously) the donor die of the donor substrate 300 is placed on the target die of the target substrate 350.

[0062] exist Figure 3JIn the process, measure the position of the donor die (e.g., donor dies 302A-2 to 302C-2) and / or mark 315-2, as previously relative to Figure 3B As described.

[0063] exist Figure 3J In this configuration, an additional donor die from donor substrate 300 is placed on a target die from target substrate 350. The positions of donor substrate 300, target substrate 350, or a combination thereof, can be adjusted to align the additional donor die from donor substrate 300 with the target die from target substrate 350. As depicted, donor substrate 300 is positioned (e.g., by moving in orientation or orientation 334) to align alignment point 303A of donor die 302A with alignment point 305A of target die 304A. Donor die 302A can then be placed on target die 304A by any suitable method, as previously described. Figure 3H After aligning the donor die 302B and the target die 304B at alignment point 307B, the donor die 302B is depicted as being bonded to the target die 304B. As will be appreciated, this can be repeated where appropriate. Figures 3A to 3H The various steps involve bonding multiple dies and processing multiple donor and target substrates.

[0064] To improve the accuracy of die-bonding processes involving the alignment of patterned dies (or substrates) (e.g., die-to-die bonding, substrate-to-substrate bonding, individual die-to-substrate bonding), the patterned substrate can be inspected and one or more parameters of the patterned substrate can be measured. One or more parameters may include the location, relative location, or absolute location of one or more features on (or near) the surface, such as at optically transparent depths. Measurements can be performed on the patterned die before or after dicing, including in applications where the die is not diced or is not diced until after die bonding. Measurements can be performed on the die, the substrate, or a sub-part thereof. Various techniques exist for measuring structures formed during the patterning process, including the use of scanning electron microscopes, image-based measurement or inspection tools, and / or various specialized tools. While the discussions in this application will consider embodiments of measurement processes and calibrations configured to operate in conjunction with die bonding, the embodiments described herein are equally applicable to other measurement processes and / or operations, such as measurement processes for measuring process parameters or assisting process control and / or the goals of a particular design (e.g., calibrating dies, calibrating substrates, etc.).

[0065] Figure 4 This is a schematic diagram illustrating the relationship between the measurement and positioning modification system. (Reference) Figure 4This diagram illustrates a die processing, measurement, and patterned die modification system. The system includes a die processing system (e.g., lithography tools, nanoimprint lithography tools, optical lithography equipment, etching tools, die bonding systems, die dicing systems, any other systems configured to produce or process patterned dies (e.g., as part of a substrate) for use in die bonding that may or may not involve dicing, and any combination thereof) 400, a measurement device 410, a patterned die modification tool 420, and a software application 430. Some or all of the die processing system 400, the measurement device 410, and the patterned die modification tool 420 may communicate with the software application 430, enabling the software application 430 to simultaneously or at different times store and analyze results, designs, data, etc., of the die processing system 400, the measurement device 410, and / or the patterned die modification tool 420.

[0066] The die processing system 400 can be configured as any suitable die processing system, such as a lithography apparatus, a die bonding system, etc. The die processing system 400 can be set up to perform die patterning and / or processing, and optionally, can be configured to correct deviations occurring within the die processing system 400 or in one or more other processes or apparatuses of the die processing. In embodiments, the die processing system 400 may be able to apply corrections to errors (e.g., relative positional errors, absolute positional errors in one or more directions) by adjusting one or more modification apparatuses of the die processing system 400. That is, in embodiments, corrections can be performed by any manufacturing processing tool in the die processing system that can purposefully modify errors. In some embodiments, the die processing system 400 may correct for systematic deviations but may not correct for random deviations (e.g., random variations). In some embodiments, correction of deviations may alternatively or additionally be performed by a patterned die modification tool.

[0067] In the case where, for example, the die processing system 400 includes an optical lithography apparatus, errors can be corrected by adjusting one or more modification devices of the lithography apparatus, for example, by using an adjustment mechanism to correct or apply optical aberrations, by using an adjuster to correct or modify the irradiation intensity distribution, by using a positioner for the mask or mask support structure and / or a positioner for the substrate stage, etc. In the case where, for example, the die processing system 400 includes a photoresist coating and developing tool, errors can be corrected by adjusting one or more modification devices of the photoresist coating and developing tool, for example, by modifying the baking temperature of the baking tool of the photoresist coating and developing equipment, by modifying the developing parameters of the developing tool of the photoresist coating and developing equipment, etc. Similarly, in the case where, for example, the die processing system 400 includes an etching tool, errors can be corrected by adjusting one or more modification devices of the etching tool, for example, by modifying etching parameters, such as etchant type, etchant rate, etc. Similarly, in the case where, for example, the die processing system 400 includes a planarization tool, error correction can be performed by adjusting one or more modification devices of the planarization tool, for example, modifying the planarization parameters. Similarly, in the case where, for example, the die processing system 400 includes a deposition tool, error correction can be performed by adjusting one or more modification devices of the deposition tool, for example, modifying the deposition parameters. Similarly, in the case where, for example, the die processing system 400 includes a die bonding tool, error correction can be performed by adjusting one or more modification devices of the die bonding tool, for example, modifying the relative position between the donor die and the target die. In embodiments, one or more modification devices of the die processing system 400 may be able to apply up to third-order polynomial corrections to errors (e.g., imaging errors, focusing errors, dosage errors, etc.).

[0068] Measurement device 410 can be configured to obtain measurements relating to a substrate patterned by, for example, a die processing system (e.g., donor die, target die, donor substrate, target substrate, features of the donor die, features of the target die, etc.). In embodiments, measurement device 410 can be configured to measure or determine one or more positions of the pattern (e.g., relative or absolute position, rotation, orientation, etc.). In embodiments, measurement device 410 is an optical imager, such as a camera, video camera, etc. In embodiments, measurement device is a charged particle imager, such as a scanning electron microscope (SEM). In embodiments, measurement device 410 is configured to measure stress in a die or substrate, such as an interferometer, beam imager, electron beam imager, etc. In embodiments, measurement device 410 is an alignment device for measuring the relative position between two objects (e.g., between one or more dies and / or substrates and / or support structures). In an embodiment, the measuring device 410 is a horizontal sensor used to measure the position of a surface, such as the height and / or rotational position of the surface (e.g., of a die or substrate).

[0069] In an embodiment, measurement device 410 measures and / or determines one or more locations associated with deformation in the die and / or substrate. After measurement or determination by measurement device 410, software application 430 generates modification information based on the measurement data (e.g., a pattern of stress characteristics). In an embodiment, software application 430 evaluates one or more values ​​at one or more locations to determine whether they are within tolerance limits. If not, software application 430 determines modification information to correct for errors reflected by one or more values ​​exceeding tolerance limits at one or more locations.

[0070] In an embodiment, software application 430 uses one or more mathematical models (e.g., one or more geometric models, stress models, strain models, etc.) to determine whether errors can be corrected by one or more modifications to the patterned die. In an embodiment, the model may specify one or more patterns of stress features that can adjust the measured position of the die and / or substrate to conform to (at least closer to) a planned position of the die and / or substrate. In an embodiment, the model may specify patterns of stress relief features, patterns of stress initiation features, and / or combinations of both stress relief features and stress initiation features. In an embodiment, the model may specify multiple patterns of stress relief features at different depths in the die and / or substrate. In an embodiment, the model may specify the dimensions of the stress features. In an embodiment, the model may specify options for the stress features used to generate the patterns, such as the radiation intensity of the tool used to generate the stress features, the radiation application time, etc., embodiments of which are discussed below.

[0071] In an embodiment, software application 430 uses one or more mathematical models to determine errors that can be corrected by the patterned die modification tool 420 and provides information (e.g., modification information) for one or more parameters of the patterned die modification tool 420, said one or more parameters enabling the patterned die modification tool 420 to correct errors (e.g., eliminate errors or reduce errors to a tolerable range). In an embodiment, one or more of the mathematical models define a set of basis functions that fit the data once parameterized. In an embodiment, one or more mathematical models include models configured to simulate correctable errors for the patterned die modification tool 420. In an embodiment, the model specifies the range of modifications that the patterned die modification tool 420 can make and determines the correctable errors within said range. That is, said range may specify an upper limit, a lower limit, and / or both an upper limit and a lower limit regarding the amount of modification of the patterned modification tool 420.

[0072] In an embodiment, software application 430 may use one or more mathematical models to determine whether an error can be corrected by one or more modifications to the die processing system 400, and provide information for one or more modifications to the die processing system 400 to correct the error (e.g., eliminate the error or reduce the error to a tolerable range). In an embodiment, one or more mathematical models define a set of basis functions that fit the data once parameterized. In an embodiment, one or more mathematical models include models configured to simulate correctable errors for the die processing system 400. In an embodiment, the model specifies a range of modifications that can be made by one or more modifying devices of the die processing system 400 and determines the correctable error within said range. That is, the range may specify an upper limit, a lower limit, and / or both an upper limit and a lower limit of the amount of modification that can be made with respect to a particular modifying device of the die processing system 400.

[0073] In this embodiment, a common optimization is provided for determining errors that can be corrected by one or more modification devices of the die processing system 400 and errors that can be corrected by the patterned die modification tool 420. In this embodiment, a common optimization is provided for determining errors that can be corrected by multiple modification devices of the die processing system 400. In this embodiment, one or more mathematical models for determining errors that can be corrected by one or more modification devices of the die processing system 400 and / or for determining errors that can be corrected by the patterned die modification tool 420, and / or combinations of said mathematical models are used to achieve common optimization. In this embodiment, common optimization results in transforming errors that cannot be corrected by the modification devices of the die processing system 400 into errors that can be corrected by one or more other modification devices of the die processing system 400 and / or by modifications made to the patterned die by the patterned die modification tool 420. As an example of this transformation, an error having spatial resolution that is uncorrectable to the modification device of the die processing system 400 can be corrected by adding additional errors, such that the total error has spatial resolution that can be corrected by the modification device of the die processing system 400. In an embodiment, the added error is distributed among a plurality of other modification devices of the die processing system 400 or among one or more other modification devices of the die processing system 400 and the patterned die modification tool 420.

[0074] In embodiments, co-optimization is performed separately or in combination for different types of errors, such as co-optimization for overlap error, focusing error, and dosage error. In embodiments, certain modification devices of the die processing system 400 are preferably capable of correcting certain types of errors; therefore, error correction is appropriately weighted or distributed among suitable different modification devices of the die processing system 300.

[0075] In embodiments, a user may specify one or more mathematical models from a set of multiple mathematical models, depending on whether the mathematical model is determined to be a good fit. For example, an interface (such as a graphical user interface) may utilize user-specified mathematical data models for consideration. In embodiments, multiple measurement mathematical data models are determined or specified. In embodiments, one or more mathematical models may be tuned for optimal noise suppression (e.g., eliminating redundant orders or reducing the use of higher orders).

[0076] For example, in an embodiment, the correctable error in the X direction at coordinates (x, y) can be addressed using the following Equation 1. Modeling:

[0077] (1),

[0078] Where k1 is a parameter (which can be a constant), and k3, k5, k7, k9, k 11 k 13 k 15 k 17 and k 19 These are used for terms x, y, xy, and x, respectively. 2 y 2 x 3 x 2 y, xy 2 and y 3 The parameters (which can be constants): k1, k3, k5, k7, k9, k 11 k 13 k 15 k 17 and k 19 One or more of them can be zero.

[0079] Similarly, in the embodiment, the correctable error in the Y direction at coordinates (x, y) can be addressed using the following Equation 2. Modeling:

[0080] (2),

[0081] Where k2 is a parameter (which can be a constant), and k4, k6, k8, k 10 k 12 k 14 k 16 k 18 and k 20 These are used for terms y, x, xy, and y, respectively. 2 x 2 y, y 2 x, yx 2 and x 3 The parameters (which can be constants): k2, k4, k6, k8, k 10 k 12 k 14 k 16 k 18 and k 20 One or more of them can be zero.

[0082] Similarly, correctable errors ∆z in the Z direction (e.g., outside the manufactured plane) can be modeled (including locally). The correctable error ∆z in the Z direction may not be cumulative, as described for correctable errors ∆x and ∆y, but instead the profile is attributed to the surface tension of the substrate, the stiffness of the substrate, or other material properties and decays with respect to correction (e.g., radially).

[0083] In one embodiment, at least a portion of the correctable error is corrected by a patterned die modification tool 420. Therefore, in one embodiment, a portion of the fitted mathematical model of the error can be corrected by the patterned die modification tool 420 by adjusting one or more modification devices of the patterned die modification tool 420. In another embodiment, at least a portion of the correctable error can be corrected by the die processing system 400 by adjusting one or more modification devices of the die processing system 400. Therefore, in one embodiment, a portion of the fitted mathematical model of the error can be corrected by the die processing system 400 by adjusting one or more modification devices of the die processing system 400.

[0084] The minimum residual systematic variation of certain processed dies may be specific to a particular subprocess or apparatus used in substrate processing and / or specific to random variations. The minimum residual systematic variation is sometimes referred to as a fingerprint. The fingerprint may not be correctable by one or more modification devices of the die processing system 400. In an embodiment, the fingerprint is corrected by modifying the patterned die using a patterned die modification tool 420. In an embodiment, the residual systematic variation between the measured data and the corresponding data calculated using models (1) and (2) is minimized by optimizing parameters (e.g., one or more of k1 to k20 or other parameters corresponding to the correctable error ∆z).

[0085] In one embodiment, software application 430 generates first modification information for modifying a patterned die using a patterned die modification tool 420, and transmits the first modification information to the patterned die modification tool 420. In another embodiment, after modifying the patterned die, software application 430 instructs the patterned die modification tool 420 to transmit the modified patterned die to die processing system 400 for, for example, further production, such as die bonding, or for other patterning associated with the modified patterned die. In another embodiment, further error correction and / or verification of the modified patterned die is performed, as discussed below. In another embodiment, after modification of the patterned die based on the first modification information, the first modification information can effectively transform errors that cannot be corrected by the die processing system 400 into errors that can be corrected by the die processing system 400.

[0086] In an embodiment, the software application 430 may also generate second modification information for one or more modification devices of the die processing system 400 and transmit the second modification information to the die processing system 400. In an embodiment, after adjusting die processing performed by one or more modification devices of the die processing system 400 based on the second modification information and using the modified patterned die in the die processing system 400, the second modification information enables the correction of correctable errors in the die processing performed by the one or more modification devices of the die processing system 400. That is, in an embodiment, one or more modification devices of the die processing system 400 are configured to correct correctable errors arising from the patterned die modified based on the first modification information. In an embodiment, additionally or alternatively, the second modification information corrects residual errors remaining after modifying the patterned die based on the first modification information.

[0087] In an embodiment, the first modification information and the second modification information can act in opposite directions. For example, the first modification information may cause the substrate / die to bend in one direction, while the second modification may cause the substrate / die to bend in the opposite direction (or produce some other correction with a similar or equivalent effect), such that combining the two will allow correction of any deformation that the substrate / die may have.

[0088] In embodiments, additionally or alternatively, the software application 430 uses one or more machine learning techniques, such as a trained machine learning model, to obtain modification information. In embodiments, additionally or alternatively, the software application 430 uses one or more lookup tables to obtain modification information. In embodiments, any combination of processing techniques may be used, such as, but not limited to, a combination of machine learning and one or more lookup tables (e.g., machine learning identifies which correction to select from the lookup table).

[0089] In an embodiment, a substrate processed in the die processing system 400 using a modified patterned die and / or an adjusted die processing method is transferred to a measurement device 410 for measurement. The measurement device 410 performs measurements in a manner similar to that described above to assess whether the error is within tolerance (e.g., by evaluating one or more locations of features of the die and / or substrate or die and / or substrate measured or located by the measurement device 410). If the error is not within tolerance, in an embodiment, additional modifications to the patterned die via a patterned die modification tool 420 and / or adjustments to one or more parameters of one or more modification devices of the die processing system 400 are performed in a manner similar to that described herein.

[0090] In one embodiment, after the patterned die is modified by the patterned die modification tool 420, the patterned die is transferred back to the measurement device 410 to repeat the process described above until the error is within tolerance.

[0091] Figure 5 This is a schematic diagram of a portion of an example device for stress relief and / or initiation in one or more dies. Figure 5 A block diagram schematically depicts an exemplary patterned die modification tool 420 configured to modify a patterned die (e.g., a donor die, a target die, a substrate including the donor die, a substrate including the target die, and any portion thereof). The patterned die modification tool 420 includes a stage 520 movable in up to six dimensions. The patterned die 510 can be held by the stage 520 using, for example, clamping (e.g., vacuum clamping, electrostatic clamping, etc.).

[0092] The patterned die modification tool 420 includes a radiation output device (e.g., a pulsed laser source) 530 configured to generate a radiation beam 535 (e.g., a radiation pulse). The output device 530 can provide radiation pulses with variable duration, variable intensity, etc. Typically, the output device is configured to provide radiation with photon energy less than the bandgap of the substrate of the patterned die 510 (including any layer through which the radiation is guided), and is capable of providing radiation pulses with durations in, for example, the femtosecond range.

[0093] Pulses from output device 530 (e.g., a laser system) can, for example, alter the material properties (e.g., density) of the substrate (including any of its layers, such as those described herein, including but not limited to any stress relaxation and / or compensation layers) by means of heating (e.g., thermal expansion), vaporization (e.g., converting a solid into a less dense liquid or gas), phase separation, crystallization, decrystallization, etc.), to inscribe the arrangement of local deformation elements (e.g., providing local density changes). Local deformation elements may cause volume changes in the patterned die 510. Local deformation elements may cause changes in stress, strain, etc., of the patterned die 510. Local deformation elements may, for example, displace one or more patterned elements on the surface of the patterned die to or from a predetermined position. Thus, induced deformation elements of the patterned die can modify or correct, for example, the pattern placement on the surface of the patterned die. Arrangements of local deformation elements (e.g., stress elements) that modify or correct the placement of features on the surface of the patterned die can be defined and written. In embodiments, local deformation elements (e.g., stress elements) can be introduced into the center or inner portion of the patterned die. Applying these local deformation elements (e.g., stress elements) in the center or inner portion of the substrate can prevent bending of a portion of the patterned die when, for example, modifying or correcting feature positions. Lasers such as femtosecond or ultrashort lasers can penetrate regions below the surface without damaging the surface. At the focal point (which can be set below the surface), temperatures can rise to very high levels (>1000°C) and / or induce high compressive stresses. High temperatures and / or high compressive stresses can induce recrystallization, dislocations, and / or microvoids within the applicable layers / structures. In embodiments, the radiation output can generate multiple separate beams to allow the parallel generation of multiple local deformation elements.

[0094] A steering mirror 490 guides the beam 535 into the focusing objective 540. The objective 540 focuses the beam 535 onto the patterned die 510. The patterned die modification tool 420 also includes a controller 580 and a computer system 560, which manages the translation of the positioning platform of the stage 520 in a plane generally perpendicular to the beam (X and / or Y directions) and / or about an axis parallel to the plane (about the X and / or Y directions). The controller 580 and computer system 560 can control the translation of the stage 520 in a direction perpendicular to the plane (Z direction) and / or rotation about the direction (about the Z direction). Alternatively or additionally, the controller 580 and computer system 560 can control the translation and / or rotation of the objective 540 via a positioning platform 550 fixed thereto. In this embodiment, the objective is fixed and all movements are performed using the stage 520. In an embodiment, the patterned die modification tool 420 may include one or more sensors (not shown for convenience) to detect the position of components such as the stage 520 and / or objective lens 540, determine focus / flatness, etc. In an embodiment, the patterned die modification tool 420 may be integrated into a die bonding tool, such as by integrating it into... Figures 3A to 3J In the equipment.

[0095] The patterned die modification tool 420 can also provide an observation system including a CCD (charge-coupled device) camera 565, which receives radiation from an illumination output device (e.g., a radiation source) arranged in the stage 520 via an optical element 545. The observation system can facilitate navigation of the patterned die 510 to a target location. Furthermore, the observation system can also be used to observe the formation of modified areas on the patterned die 510 by the beam 435 of the source 530. The camera 565 can be any suitable camera, such as a reference camera. Figures 3A to 3J The device describes the camera of the measurement system.

[0096] Computer system 560 may be a microprocessor, general-purpose processor, special-purpose processor, CPU (central processing unit), GPU (graphics processing unit), etc. The computer system may be located within controller 580, or may be a separate unit, such as a PC (personal computer), workstation, mainframe computer, etc. Computer 560 may also include I / O (input / output) units, such as a keyboard, touchpad, mouse, video / graphics display, printer, etc. Additionally, computer system 560 may include volatile and / or non-volatile memory. Computer system 560 may be implemented in hardware, software, firmware, or any combination thereof. Furthermore, computer 560 may control output device 530. Computer system 560 may include one or more algorithms implemented in hardware, software, or both, which allow the generation of control signals from received data (e.g., experimental data) for patterned die modification tool 520. The control signals may control the writing of localized deformation elements and / or localized transmission variations in the substrate of patterned die 510, so as to correct pattern placement or optical transmission, for example, based on the received data. Specifically, the computer system 560 can control the positioning of the source 530 and / or the stage 520 and / or control the positioning of the objective lens 540 or control the optical parameters and / or the CCD camera 565.

[0097] In embodiments, the effects of local deformation elements can be described by a physical mathematical model representing the deformation or change caused by the bundle. The direction of deformation or change can be controlled by applying different local deformation elements to substrates with different deformation properties. The deformation properties (such as magnitude and direction) of a given local deformation element (e.g., a stress element) represent a specific mode. For example, an "X-mode" represents deformation or change along the X-axis and is described by "X-mode" properties. When calculating control signals, one or more algorithms can calculate where and at what density each type of local deformation element (e.g., a stress element) should be written. For example, alignment errors in the X direction can be corrected using local deformation elements of the X-mode type. The model can be optimized using a number of modes to find the best possible solution for a particular problem. Typically, X and Y modes orthogonal to each other will be used, but other modes such as 45° and 135° can also be used if needed. In some embodiments, a Z-mode (or other modes not parallel to the manufactured plane) can also be used.

[0098] Therefore, in the exemplary patterned die modification process, a measurement system (not shown) can be used to determine the position of features (generated by the exemplary patterned die manufacturing process) on the surface of the patterned die in order to determine, for example, whether the patterning process was successful, i.e., whether the patterned features are in the desired position. If the determined error is not within a predetermined level, then, for example, Figure 4The patterned die modification tool 420 writes the arrangement of local deformation elements (e.g., stress elements) into the patterned die. The local deformation elements can shift the position of one or more features of the patterned die to a predetermined location. The success of the patterned die modification can then be measured. For example, if the measured positioning error is currently below a predetermined threshold, the patterned die can be further processed, such as by die bonding.

[0099] In an embodiment, the patterned die modification tool 420 includes a tool for writing a pattern onto the patterned die. For example, an electron beam writer can be used to generate the patterned die. Modification information described herein can be provided to such a tool to modify the generation of the patterned die. In such cases, the modification information can be determined based on measurement and / or simulation results using other copies of the patterned die or using similar patterned dies. This data can be supplemented by measurement data of the generated patterned die (e.g., measurements obtained during the generation of the patterned die).

[0100] Figure 6 This is a flowchart illustrating an exemplary method for modifying core stress. Figure 6 The methods described in the flowchart can be executed by software application 430. The following is presented... Figure 6 The operation of the method is intended to be illustrative. In some embodiments, Figure 6 The method can be implemented using one or more additional operations not described and / or without one or more of the operations discussed. Additionally, the diagrams and descriptions below... Figure 6 The order of operations of the methods is not intended to be restrictive. In some embodiments, Figure 6 One or more parts of the method may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). One or more processing devices may include actions performed in response to instructions stored electronically on an electronic storage medium. Figure 6 The method may include one or more means, some or all of which are involved in its operation. For example, one or more processing means may include those specifically designed to perform... Figure 6 The method of operation involves configuring one or more devices with one or more hardware, firmware and / or software.

[0101] At 600, information regarding patterning errors related to the patterned die (which may be a patterned substrate, a portion of a patterned substrate, or even a region of a patterned die) is obtained. In an embodiment, the patterning error is a feature placement error. In an embodiment, the patterning error is stress-induced pattern deformation. In an embodiment, a portion of this error cannot be corrected by modification equipment of the die processing system (e.g., die processing system 400). In an embodiment, the patterning error information is derived based on measurements of the positions of one or more features of the patterned die.

[0102] At 610, modification information is generated for modifying the patterned die based on error information. In an embodiment, this is done by a patterned die modification tool 420 (such as one used with respect to...). Figure 4 (The system described is the same as or similar to the system) uses modification information. In an embodiment, at 610, modification information for the modification device of the die processing system is generated based on error information and modification information for modifying the patterned die.

[0103] In one embodiment, at 610, the modified information is converted 620 into an option for a spatially distributed array of one or more induced local deformation elements (e.g., stress elements) across the patterned die. In this embodiment, the spatially distributed array of one or more induced local deformations can transform the portion of the patterning error into a correctable error for the die processing system (e.g., die processing system 400).

[0104] At 630, one or more induced local deformation elements (e.g., stress features) are generated within the substrate of the patterned die. In an embodiment, generating the induced local deformation elements includes using laser pulses to generate induced local density changes to alter the material properties of the substrate, as described above relative to... Figure 5 As described.

[0105] Figure 7 This is a flowchart illustrating an exemplary method of die placement. Each of these operations is described in detail below. The operations of method 700 presented below are intended to be illustrative. In some embodiments, method 700 may be implemented with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, in Figure 7The order of operations of method 700 illustrated in the figures and described below is not intended to be limiting. In some embodiments, one or more portions of method 700 may be implemented in one or more processing means (e.g., one or more processors). One or more processing means may include one or more means that perform some or all of the operations of method 700 in response to instructions stored electronically on an electronic storage medium. For example, one or more processing means may include one or more means configured by one or more hardware, firmware and / or software specifically designed to perform the operations of method 700.

[0106] At operation 710, multiple donor die positions are obtained. The donor die positions can be obtained by measuring one or more positions of the donor dies along one or more dimensions. The donor dies may be located on or within a donor substrate (e.g., a carrier structure, semiconductor substrate, etc.), and the positions of the multiple donor dies can be obtained relative to the donor substrate. The positions of the multiple donor dies can be measured relative to measurement marks. The positions of the multiple donor dies in a plane (e.g., in the XY plane) can be measured. The positions of the multiple donor dies can also be measured in a plane by a first method and out of plane (e.g., in the Z direction) by a second method. For example, the positions of the multiple donor dies can be measured based on one or more images in a plane. The positions of the multiple donor dies can be obtained from a two-dimensional image showing the positions of the edges or corners of the donor dies relative to the support structure or die actuator. The positions of the multiple donor dies can be obtained based on one or more features (e.g., one or more electroactive regions) on the exposed surface of the donor dies. One or more of these features of the donor die can be used as alignment marks or reference marks. In some embodiments, alignment marks may be included as exposed features of the donor die. Alignment marks may be specifically added for die bonding or may be alignment marks corresponding to previous manufacturing steps. Multiple donor die positions can be measured or obtained from a storage device.

[0107] At operation 720, multiple target die locations are obtained. The target dies may be located on or within a target substrate (e.g., a carrier structure, a semiconductor substrate, etc.), and the positions of the multiple target dies relative to the target substrate can be obtained. The positions of the multiple target dies can be obtained by any suitable method, including any of the methods described with reference to operation 710.

[0108] At operation 730, a donor die is selected from a plurality of donor dies. The donor die can be selected based on position (e.g., along a row, along a column), displacement (e.g., the donor die closest to the desired position), thickness (e.g., a thicker die can be placed before a thinner die, including if the donor die comprises two or more types of dies), etc. The donor die can have a corresponding target die, such as a target die in a corresponding position on a target substrate (e.g., a target die carrier structure). In some embodiments, the target die can be selected by any suitable method, and the donor die is selected based on its correspondence with the selected target die. The donor die and the target die can be combined such that the donor die and its corresponding target die are separated by a distance that can be traveled by the die placement method. The donor die and the target die can be substantially aligned (e.g., coarsely aligned) within a coarse alignment threshold. The donor die and the target die can be held in close proximity by one or more substrates, chucks, actuators, adhesives, etc.

[0109] At operation 740, the relative position between the selected donor die and the corresponding target die is adjusted to align the donor die with the corresponding target die. Adjustment includes cases where the position is adjusted minimally or substantially not (e.g., after measurement or proximity), such as if the measured position corresponds to the target position within a threshold. In embodiments, the position of the donor die can be adjusted by the action of a die actuator, substrate holder, chuck, etc. The position of the donor die can be adjusted by the action of a substrate delivery device. The position of the donor die can be adjusted in one or more directions, such as in the XY plane. Alternatively, or in addition to adjusting the position of the donor die, the position of the target die can be adjusted by any suitable method, such as any of the methods previously described. Adjustment of the relative position between the donor die and the target die can include iterative measurements of the positions of the donor die and / or the target die, including measurements performed as the adjustment occurs.

[0110] The position of the donor die can be adjusted based on its alignment. The alignment position can be a target for placing the donor die (e.g., a target location). The target (e.g., a target location) can be obtained, for example, from a measurement of the target die position at operation 720. The target can correspond to the location of the target die. The target can correspond to multiple locations on the target die. The target can be a location (e.g., a location in three dimensions such as along the X, Y, and Z axes, or in six directions such as along the X, Y, and Z axes and relative to rotational angles about those axes, etc.). The target can be a set of locations, such as two or more locations on the target die to which a region of the donor die will be bonded, or two or more locations on the target die. Alternatively or additionally, the position of the target die can be adjusted based on its alignment. The alignment position can be a target for placing the donor die (e.g., a target location). The target (e.g., a target location) can be obtained, for example, from a measurement of the donor die position at operation 710. The target can correspond to the location of the donor die. The target can correspond to multiple locations on the donor die.

[0111] At operation 750, the selected donor die is placed on the corresponding target die. The donor die can be placed on the target die by any suitable method, such as movement by a die actuator, by radiation-mediated bonding, by stamping, by electrostatic attraction, etc. When the donor die contacts the target die, it can undergo alignment, including self-alignment. When the donor die contacts the target die, it can be bonded to the target die, for example, by van der Waals forces. In some embodiments, additional donor dies can be placed on the same or different target dies.

[0112] At operation 760, it is determined whether an additional donor die is reserved for placement. If an additional donor die (e.g., on a donor substrate or substrate) is reserved for placement, the process continues to operation 730, where another donor die is selected. If no additional donor die is reserved for placement, the process continues to operation 770, where the bonding of multiple dies is completed.

[0113] In embodiments, specific donor dies and target dies are bonded together, for example, by intermolecular bonding, when the donor die is placed on the target die. In embodiments, after the donor die is placed on the target die, the donor die is bonded to the target die, such as through annealing or other bonding processes. In embodiments, the bonding of the donor die to the target die is completed before the next donor die is placed on the target die. In embodiments, the bonding of the donor die to the target die is completed after multiple donor dies are placed on their respective target dies, for example, after all donor dies on the donor substrate are placed. In embodiments, the donor die placed on the target die is annealed to form or enhance electrical connections. In embodiments, the annealing of specific donor dies and target dies can be completed before the next donor die is placed on the target die. In embodiments, the annealing of the donor die and target die is completed after multiple donor dies are placed on their respective target dies, for example, after all donor dies on the donor substrate are placed. The donor die can remain against the target die during the bonding or annealing process. The donor and target die pair can be released from the substrate or other holding device before or after annealing.

[0114] As described above, method 700 (and / or other methods and systems described herein) is configured for die placement.

[0115] Figure 8This is a schematic representation of exemplary deformation, a pattern of stress features, and corrections made to the deformation by applying the pattern of stress features. Exemplary deformations are depicted as, for example, dies / substrates 800A and 800B. As will be understood, actual deformations may have much more complex spatial signatures, and therefore the depicted deformations are merely relatively simple examples used to illustrate embodiments of this disclosure. The example dies / substrates may be: donor substrates and / or target substrates, including diced, reconstructed, or undicated substrates; or donor dies and / or target dies, which may be supported by one or more substrates. The deformation may be stress-induced. The deformation may be induced by a manufacturing process. The deformation may be induced by a die bonding process, including processes in which dies / substrates 800A and 800B are bonded to one or more additional substrates or dies. The deformation can be measured by measuring stress in the example die / substrate, such as by interferometry, beam imaging, electron beam imaging, etc. The deformation can be measured by measuring the location of features on the die / substrate and comparing those measured locations with the planned locations of the features. Deformation can be the difference between the measured (e.g., actual) location of a feature and the corresponding target location, such as the location on one or more corresponding target and / or donor dies / substrates to which the example die / substrate will be bonded. In such cases, the deformation may have no stress-induced component or may have a minimal stress-induced component. Deformation may have both direction and magnitude (e.g., may be represented by a vector). In some embodiments, deformation may have only a magnitude, such as a measure of the induced stress.

[0116] Figure 8Two exemplary deformations are depicted: radial deformation in die / substrate 800A and saddle deformation in die / substrate 800B. In the radial deformation of die / substrate 800A, the absolute magnitude of the deformation is shown in grayscale, where white represents the minimum deformation and black represents the maximum deformation present, which can still be a relatively small deformation of about a few nanometers. The radial deformation of die / substrate 800A is minimum at the central portion of the die / substrate and maximum at one or more edges, consistent with radial stress (such as that induced by clamping) or radial feature pattern errors (such as those induced by substrate flexing during photolithography). In the saddle deformation of die / substrate 800B, the magnitude and direction of the deformation are shown in grayscale, where gray represents the minimum deformation, black represents the maximum positive deformation, and white represents the maximum negative deformation (where positive and negative deformation can be relative and determined based on the choice of axis). The saddle-shaped deformation of the die / substrate 800B is minimal at the central portion of the die / substrate and maximal at different portions of one or more edges of the die / substrate 800B in different directions (such as compression and expansion). The saddle-shaped deformation of the die / substrate 800B can be associated with one or more different types of substrate processing errors, substrate stresses (such as those induced during photolithography or another patterning process), clamping stresses, etc.

[0117] Exemplary patterns of stress features for dies / substrates 800A and 800B are depicted as patterns 810A and 810B, respectively. The patterns of stress features may include multiple stress features that alter the volume and / or density of the substrate. The depicted patterns of stress features show the magnitudes of the stress features, but not the individual stress features themselves. The magnitudes of the stress features may correspond to the density of the stress features (e.g., the degree to which the stress features are closely spaced relative to each other in the fabrication plane (XY plane) and / or in the Z direction perpendicular to the fabrication plane), the size of the stress features (e.g., the size of each stress feature in a single stress feature), etc. Stress features may have positive or negative magnitudes. For example, some stress features may cause an increase in volume / decrease in density, while others may cause a decrease in volume / increase in density (e.g., for patterned dies) of one or more layers of the substrate. In some embodiments, if placed in a relaxable prestressed layer (e.g., a layer with a gradient in lattice constant), the stress features may cause a decrease in volume, including by reducing one or more dimensions of the crystal unit cell when the stress features are generated. In some embodiments, the stress characteristic may have only positive values, such as in cases where the stress characteristic causes an increase in volume and / or a decrease in density in virtually all instances.

[0118] In the radial deformation of pattern 810A, the magnitude of the stress feature pattern can be opposite to the magnitude of the deformation of die / substrate 800A. For example, the stress feature pattern can be dense in the central portion of the die / substrate (depicted as black in a grayscale intensity scheme), such that the total positional change induced in the die / substrate is greatest at the edges. The stress feature pattern can be less dense along one or more edges, wherein the features at one or more edges of die / substrate 800A can still experience most of the positional change due to the total number of stress features at the edges compared to the features in the central portion. In the saddle-shaped deformation of pattern 810B, the magnitude of the stress feature pattern can be a mirror image of the magnitude and direction of the deformation of die / substrate 800B. For example, the stress feature pattern can be characterized by positive and negative volumetric stress features (e.g., depicted as black and white areas in a grayscale intensity scheme, respectively), which can expand and compress the surface (or back side or any other suitable layer) of die / substrate 800B to compensate for the manufactured stress and / or deformation.

[0119] Die / substrate 820A and 820B may represent the deformation of die / substrate 800A and 800B after the application of corresponding patterns of stress features of patterns 810A and 810B, respectively. The corrected die / substrate may not have completely eliminated deformation or perfectly corrected feature positions, but may be suitable for alignment during die bonding. In some embodiments, correction may be an iterative process in which the deformation of the die / substrate is measured, a pattern of stress features is generated and applied to the die / substrate, and the deformation of the die / substrate is remeasured until the deformation falls below a threshold for die bonding or another process.

[0120] Therefore, in embodiments, a laser (such as a femtosecond laser) can be used, for example, to generate strain elements (e.g., microvoids) within the die / substrate to correct die / substrate deformation. In embodiments, the placement accuracy from the donor die features to the target die can be less than or equal to 10 nm, less than or equal to 5 nm, less than or equal to 2 nm, or less than or equal to 1 nm. Local die / substrate deformation (e.g., high-frequency deformation) can be greater than this deformation, often tens of nm. Therefore, in embodiments, die / substrate deformation is corrected to a deformation less than or equal to the placement accuracy.

[0121] In embodiments, a method is provided for locally pre-correcting a die / substrate to be bonded using, for example, a laser as described above and one or more strain elements induced in the die / substrate. In embodiments, the method includes measuring the die / substrate to determine die / substrate deformation. This deformation can be measured using measurement techniques, including alignment techniques such as those using measurement alignment marks or features. Based on these measurements, a die / substrate map describing the die / substrate deformation can be generated. Based on this information, stress features (e.g., microvoids) can be induced below the surface of the die / substrate using, for example, a laser as described above. These stress features cause at least a portion of the die / substrate to locally deform to displace features on the surface of the die / substrate in a specific direction; for example, expansion below the surface can also cause pattern displacement on the surface of the die / substrate. The size, depth, location, etc., of the stress features are carefully tuned / selected to allow undesirable deformation to be counteracted and potential device damage to be avoided.

[0122] In embodiments, stress features can be induced in the same tool used for measurement. For example, the radiation used to perform the measurement can be tuned to generate stress features instead. Thus, in embodiments, the tool can first measure the die / substrate and then switch the radiation to generate stress features. In embodiments, the same optics can be used for both measurement and stress feature generation. In embodiments, one or more optical elements can be changed, modified, reconfigured, etc., between measurement and stress feature generation to allow the optics to perform both functions. In embodiments, the tool is an alignment measurement tool. In embodiments, the tool is a lithography apparatus; for example, an exposure column can be used to generate stress features and a measurement system in the lithography apparatus can be used to perform the measurement. In embodiments, the tool can be a two-platform apparatus, wherein stress features are generated on a die / substrate held by a first platform, and the measurement is performed on a die / substrate held by a second platform, and then the second platform can be moved to a position where stress features can be generated. In embodiments, stress features can be induced in different tools used for measurement.

[0123] In one embodiment, localized (high spatial frequency) deformations can be repaired before the die / substrate is bonded to another die / substrate. In another embodiment, one or more global (low spatial frequency) deformations can be corrected by other methods, such as relative positioning.

[0124] Figure 9A and Figure 9B This is a schematic diagram illustrating the correction of feature positions by applying a pattern of stress features to an exemplary die according to one or more embodiments. Figure 9AA cross-sectional view of an exemplary patterned die is depicted. The patterned die is supported by a support 902, which may be a substrate stage, substrate, substrate chuck, or any other suitable support. In one or more embodiments, the support 902 may be another substrate or die to which the patterned die has been bonded, including additional patterned dies. The patterned die may include multiple layers, including layers depicted as body layers 910A to 910C. Body layers 910A to 910C may include portions of an integrated circuit device (e.g., transistors, metal lines, through-silicon vias (TSVs), etc.) fabricated therein, which are not depicted for ease of description. Body layers 910A to 910C may be: thinned layers, such as layers thinned by CMP after the patterned die is fabricated; or no thinned layers, such as those present in an unpatterned die. The patterned die may include one or more compensation layers, such as compensation layer 920 and compensation layer 930, either within the die or on its outer surface (e.g., on the bottom outer surface of layer 910A). One or more compensation layers may include one or more prestressed layers. One or more compensation layers may include continuous layers, such as under a portion of an integrated circuit device disposed therein (e.g., in a portion of the patterned die to be thinned). One or more compensation layers may include discontinuous layers, such as having one or more regions without compensation layers (e.g., regions in the XY plane). For example, one or more compensation layers may be patterned such that they do not intersect with or alter a portion of an integrated circuit device disposed therein. One or more compensation layers may be made of any suitable material, such as amorphous silicon, silicon dioxide, crystalline, semiconductor, glass, or cellophane. One or more compensation layers may have any suitable thickness. In some embodiments, the thickness of one or more compensation layers may limit the size of the stress features. In some embodiments, the stress characteristics may be attributed to anisotropic expansion (e.g., in different directions and in different ways) due to constraints in the compensation layer.

[0125] The patterned die may have one or more features, such as feature 942. These features may be selected from one or more of the following: a portion of a transistor, a portion of a memory cell, a metal wire or via, a connector, a bonding pad, etc. Feature 942 is depicted as protruding from the top of the patterned die (for ease of depiction), but may be recessed, coplanar, or have any other suitable relationship relative to the surface of the patterned die. Feature 942 may have a planned (e.g., intended) location indicated by dashed box 940. The location of feature 942 may vary between planned locations due to manufacturing errors (such as lithography errors, etching-induced stress, thermal stress, etc.) or due to other stress-related deformations (such as clamping deformation). The difference between the (actual) location and the planned location of feature 942 may be the result of deformation itself or another deformation (e.g., substrate bending). In either case, the difference between the location and the planned location of the feature can be mitigated by applying a pattern of stress features to the patterned die.

[0126] Figure 9B Patterns depicting the characteristics of applied stress Figure 9A An exemplary cross-sectional view of a patterned die is provided. Stress features can be patterned using various methods. For example, stress features can be patterned by an energy source 950, which can be a radiation source (such as an electromagnetic source, including a laser source having wavelengths of, for example, 8000 nm or less, 5000 nm or less, 2000 nm or less, 1000 nm or less, 500 nm or less, 300 nm or less, 200 nm or less, or 100 nm or less). Stress features can be patterned by the interaction of two or more energy beams from one or more energy sources (such as a laser beam transmitted into the compensation layer 930 and a laser beam transmitted through the energy source 950). In some embodiments, the energy source can generate energy pulses irradiating the patterned die. The energy pulses can be femtosecond or have a longer pulse duration. The energy pulses can have any suitable pulse intensity. In some embodiments, the energy pulses can have wavelengths within the bandgap of the host layer. In some embodiments, the wavelength of the energy pulses can be tuned to the absorption region of the spectrum of the compensation layer. The energy source can generate stress characteristics in any suitable layer, including in one or more compensation layers, in the main body layer, on the surface of the patterned die, on the back side of the patterned die, etc. Figure 9BIn this embodiment, the energy source is depicted as applying energy to the patterned die through the front side, but alternatively or additionally, energy can be applied through the back side, including through the support 902. In an embodiment, stress features can be generated by patterning one or more stress compensation layers. For example, the stress compensation layer can be formed to have stress in the pattern therein, or it can be formed to have a pattern capable of releasing stress. In an embodiment, stress features can be generated mechanically, for example, by splitting one or more compensation layers, grinding one or more compensation layers, etc.

[0127] Figure 9B The patterned die includes several different types of stress features. Of course, the die does not need to have all of these different types of stress features; for convenience, they are shown together herein. Stress feature 960 is depicted as forming in the body layer 910C, close to the surface. Stress features 960, centered on some of the features 942, are depicted as causing a corresponding change in the height of the features 942 (e.g., correction in the Z direction); of course, they can be used to cause changes in different directions (e.g., correction in the X and / or Y directions). Stress features 962 are depicted as forming in a compensation layer 920, which may be a prestressed layer, and extending into the body layers 910A and 910B. In some embodiments, stress features may occupy space in multiple layers, such as the compensation layer and the body layer. Stress feature 964 is depicted as forming in the compensation layer 930 and causing volume expansion. Stress feature 964 causes expansion in the Y direction (as depicted). Stress feature 966 is depicted as forming in the compensation layer 920 and causing volume contraction. Stress feature 966 causes contraction in the Y direction (as depicted). By applying multiple stress features, which may include various types of stress features, the position of feature 942 can be partially or completely corrected to the planned position 940.

[0128] Therefore, in embodiments, stress in the die / substrate can introduce significant deformation, such as deformation of the location of die features. For example, this stress can originate from the bonding process. This amount of deformation can exceed the actuation range of the adjustment knobs of the die processing equipment (e.g., die bonders, lithography equipment, etc.) and / or cause unacceptable overlap problems in subsequent processing steps.

[0129] Deformation can be at least partially mitigated by depositing an additional stress compensation layer that induces substantially opposite stresses (such as depositing one or more compensation layers 930 onto the outer surface of the die / substrate, for example, to the bonded die / substrate). In an embodiment, notches / voids are provided in the compensation layer to reduce stresses introduced, for example, by the bonding process. Instead of an additional stress compensation layer, or in addition to an additional stress compensation layer, notches / voids can be introduced into existing layers of the die / substrate.

[0130] In an embodiment, cutouts / voids are arranged in the form of a compensation pattern. In an embodiment, the cutouts / voids can extend in two dimensions. For example, multiple cutouts / voids can exist in one direction and multiple cutouts / voids can exist in orthogonal directions. Cutouts / voids in both dimensions allow for control over both X and Y deformations. In an embodiment, the cutouts / voids include holes with a calculated density arranged in both dimensions to achieve a desired compensation stress pattern. In an embodiment, a direct-write / maskless exposure tool (e.g., an electron beam writer) can be used to generate the compensation pattern.

[0131] In an embodiment, a pattern can be generated in the die / substrate after it has been bonded to another die / substrate. Therefore, in an embodiment, the bonded die / substrate is characterized by measuring deformation (e.g., measuring substrate lattice deformation known in photolithographic alignment techniques) using, for example, an alignment system, a camera, etc., to measure the characteristics of the die / substrate, which can be done by measuring existing or added markings, measuring circuit features, etc.

[0132] By measuring deformation, a compensation pattern specific to the measured deformation is determined such that the deformation of the ultimately bonded die / substrate is minimized or reduced (or within the range of adjustments made by any subsequent processing equipment). In an embodiment, the compensation pattern is determined by software. In another embodiment, the compensation pattern is determined by optimization to account for cases where corrections made by the compensation pattern at one portion can at least partially offset corrections at another portion or introduce a quantitative amount of deformation into another portion where there would otherwise be no such amount of deformation. Any or more of the techniques described above with respect to software application 430 may be used.

[0133] Next, a compensation pattern is formed in the compensation layer (or optionally, the compensation pattern is split across multiple compensation layers, for example, one undergoing deformation in the X direction and another in the Y direction). As previously mentioned, for this purpose, the compensation layer can be a specific layer deposited in either of the bonded die / substrate. Alternatively or additionally, the pattern can be applied to an existing layer (e.g., a SiO2 layer) in one or both of the die / substrate.

[0134] In embodiments, patterning can be created in the die / substrate before it has been bonded to another die / substrate. For example, it can be assumed that the stress variation between dies / substrates is small enough that the characteristics of only one or more bonded dies / substrates can be determined by measurement (e.g., using an alignment system). The techniques described above can be used to induce similar but substantially opposite stresses in one of the dies / substrates to be bonded before the bonding process takes place. After bonding, the deformation of the finally bonded die / substrate is minimized or reduced (or within the range of adjustments made by any subsequent processing equipment).

[0135] In the embodiments, the stress and deformation (caused by stress) of individual dies (especially after cutting) are not uniform. For example, dies in or from the center of the substrate may deform less than dies in or from the edge of the substrate. Therefore, as will be understood, the various corrections described herein can be applied to each die or group of dies, regardless of whether those dies have been cut from the substrate or are still part of the substrate.

[0136] In one embodiment, one or more compensation layers include a photoresist layer applied to the die / substrate. In another embodiment, one or more layers to which stress features are applied are silicon dioxide layers / structures. In yet another embodiment, stress features, such as notches, voids, etc., are created by directly etching at least a portion of a layer, whether that layer is added or pre-existing as a die / substrate layer.

[0137] In embodiments, combinations of die / substrate portions with stress features can exist to produce the desired deformation correction. For example, in embodiments, stress features (e.g., notches / voids or localized deformation elements) can be formed in a stress relaxation layer / compensation layer or in a layer at the outer surface of the die / substrate, wherein these stress features provide compensation in a particular direction (e.g., contraction), and stress features (e.g., notches / voids or localized deformation elements) can be formed inside another portion of the die / substrate (e.g., the body of the die / substrate, another stress relaxation layer / compensation layer, or another layer at the outer surface of the die / substrate), wherein these stress features provide compensation in a different direction (e.g., expansion). Thus, for example, stress features in different portions of the die / substrate can act in opposite stress directions, and thus allow stress relaxation / reduction in different (e.g., opposite) directions. In embodiments, radiation can be used to generate locally deformable elements within the body, and radiation (e.g., from a similar / identical radiation source, such as a laser) can be used to erode a portion of the surface to produce relaxation in different directions in order to achieve optimized / desired correction of (or each) die / substrate. In embodiments, the same tool can be used to generate these different sets of stress features. For example, these multiple sets of stress features can be advantageous if more than two dies / substrates are stacked on top of each other and the alignment of the individual dies in the stack is important.

[0138] Therefore, in embodiments, sets of two or more distinct stress features at different locations within or on the die / substrate act in at least partially opposite directions. For example, a first set of one or more stress features may bend the substrate / die in one direction, while a second set of one or more stress features may bend the substrate / die at least partially in the opposite direction, such that combining the two will allow correction of any deformation that the substrate / die may have. For example, a stress relaxation layer may be etched with, for example, notches / voids to deform the substrate / die in a particular direction, and a portion of the die / substrate may include local deformation elements that deform the die / substrate in at least partially opposite directions, such that combining the two will allow correction of any deformation that the substrate / die may have. Of course, the first and second sets may be the same type of stress features (e.g., notches / voids or local deformation elements) or different types of stress features (e.g., one is a notch / void and the other is a local deformation element). In embodiments, the first set is located at a different depth within the die / substrate than the second set.

[0139] In the embodiments, the integrated circuit includes any type of integrated circuit, including photonic integrated circuits.

[0140] In embodiments, the techniques and apparatus described herein can be applied to die-to-die bonding, substrate-to-substrate bonding, die-to-substrate bonding, etc. For example, the techniques and apparatus described herein can be applied to bonding individual donor dies to individual target dies. In embodiments, the techniques and apparatus described herein can be applied to bonding groups of donor dies to one or more target dies at substantially the same time, or bonding groups of target dies to one or more donor dies at substantially the same time. In embodiments, the techniques and apparatus described herein can be applied to bonding one or more donor dies to a substrate comprising one or more target dies formed therein or on, or bonding one or more target dies to a substrate comprising one or more donor dies formed therein or on. In embodiments, the techniques and apparatus described herein can be applied to bonding a complete or partial substrate comprising donor dies to one or more target dies, or bonding a complete or partial substrate comprising target dies to one or more donor dies. Therefore, the techniques and equipment described herein can be applied to virtually every form of die bonding, whether it is bonding individual dies, bonding dies in groups, or bonding dies as part of a complete or partial substrate.

[0141] Figure 10 This is a diagram of one or more example computer systems CS that can be used to implement the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (one or more processors) coupled to the bus BS to process information. The computer system CS also includes main memory MM, such as random access memory (RAM) or other dynamic storage devices, coupled to the bus BS for storing information and instructions to be executed by the processor PRO. The main memory MM may also be used to store temporary variables or other intermediate information during instruction execution by the processor PRO. The computer system CS also includes read-only memory (ROM) or other static storage devices coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0142] A computer system CS can be connected via a bus BS to a display DS used to display information to the computer user, such as a cathode ray tube (CRT), or a flat panel or touch panel display. An input device ID, including alphanumeric keys and other keys, is connected to the bus BS to communicate information and command selections to the processor PRO. Another type of user input device is a cursor controller CC, such as a mouse, trackball, or cursor direction keys, used to communicate directional information and command selections to the processor PRO and to control cursor movement on the display DS. This type of input device typically has two degrees of freedom on two axes (e.g., a first axis (X) and a second axis (e.g., Y)), allowing the device to specify its position in a plane. Touch panel (screen) displays can also be used as input devices.

[0143] In some embodiments, portions of one or more methods described herein can be executed by a computer system CS in response to a processor PRO executing one or more sequences of one or more instructions included in main memory MM. These instructions may be read into main memory MM from another computer-readable medium, such as a storage device SD. Execution of the instruction sequence included in main memory MM causes the processor PRO to perform one or more processing steps (operations) described herein. One or more processors arranged in a multiprocessor configuration may also be used to execute the instruction sequence included in main memory MM. In some embodiments, a hard-wired circuit system may be used instead of or in combination with software instructions. Therefore, the description herein is not limited to any particular combination of hardware circuitry and software.

[0144] As used herein, the terms “computer-readable medium” and / or “machine-readable medium” refer to any medium that participates in providing instructions to a processor for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical discs or magnetic disks, such as storage devices (SDs). Volatile media include volatile memory, such as main memory (MMs). Transmission media include coaxial cables, copper wires, and optical fibers, including lines containing a bus (BS). Transmission media can also take the form of acoustic waves or radiated waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as floppy disks, flexible disks, hard disks, magnetic tapes, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tape, any other physical media with a perforated pattern, RAM, PROMs and EPROMs, FLASH-EPROMs, any other memory chips, or cartridges. Non-transitory computer-readable media may have instructions recorded thereon. These instructions, when executed by a computer, can perform any of the operations described herein. For example, a temporary computer-readable medium may include a carrier wave or other means of propagating electromagnetic signals.

[0145] Various forms of computer-readable media may be involved when carrying one or more sequences of instructions to a processor PRO for execution. For example, initially, the instructions may be carried on a disk of a remote computer. The remote computer may load the instructions into its volatile memory and transmit them via a telephone line using a modem. A modem local to the computer system CS may receive data over the telephone line and convert the data into an infrared signal using an infrared transmitter. An infrared detector coupled to a bus BS may receive the data carried in the infrared signal and place the data on the bus BS. The bus BS carries the data to main memory MM, from which the processor PRO fetches and executes the instructions. The instructions received by the main memory MM may optionally be stored on a storage device SD before or after execution by the processor PRO.

[0146] The computer system CS may also include a communication interface CI connected to the bus BS. The communication interface CI provides a bidirectional data communication connection to a network link NDL connected to a local area network (LAN). For example, the communication interface CI may be an Integrated Services Digital Network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, the communication interface CI may be a LAN card to provide a data communication connection to a compatible LAN. A wireless link may also be implemented. In any such implementation, the communication interface CI transmits and receives electrical, electromagnetic, or optical signals carrying digital data streams representing various types of information.

[0147] A network link (NDL) typically provides data communication with other data devices over one or more networks. For example, a network link NDL may provide a connection to a host computer (HC) via a local area network (LAN). This can include providing data communication services via a global packet data communication network (now commonly referred to as the "Internet" INT). A LAN (Internet) can use electrical, electromagnetic, or optical signals to carry digital data streams. Signals through various networks and signals on the network data link (NDL) via the communication interface (CI) are exemplary carrier forms for transmitting information, carrying digital data to and from the computer system (CS).

[0148] A computer system (CS) can send and receive messages (including program code) via one or more networks, network data links (NDLs), and communication interfaces (CIs). In the Internet example, the host computer (HC) might transmit requested program code for an application via the Internet (INT), network data links (NDLs), local area networks (LANs), and communication interfaces (CIs). For example, such a downloaded application could provide all or part of the methods described herein. The received program code can be executed by the processor (PRO) upon receipt and / or stored in storage devices (SDs) or other non-volatile memory for later execution. In this way, the computer system (CS) can obtain application code in carrier-based form.

[0149] The embodiments include the following numbered items:

[0150] Clause 1: A method comprising:

[0151] A pattern of stress features is generated, the pattern of stress features being configured to change the position of multiple fabricated features on a semiconductor die; and

[0152] At least a portion of the pattern of the stress features is applied to the semiconductor die to adjust the position of the plurality of fabricated features.

[0153] Article 2: The method described according to Article 1 further includes:

[0154] Obtain the measurement location of the plurality of fabricated features on at least one region of a semiconductor die;

[0155] Determine the difference between the measured locations of the plurality of fabricated features and the planned locations of the plurality of fabricated features; and

[0156] The stress characteristic pattern is generated based on the difference.

[0157] Clause 3: The method according to Clause 2, wherein determining the difference comprises: determining the deformation of the plurality of features at the measurement location, the deformation being at least partially caused by stress in the semiconductor die.

[0158] Clause 4: The method according to Clause 2, wherein determining the difference comprises: determining the difference between the measurement location of the plurality of features and a corresponding feature on another semiconductor die, wherein the semiconductor die is configured for bonding to the other semiconductor die.

[0159] Clause 5: The method according to Clause 4, wherein generating the pattern of the stress features comprises: generating a pattern of stress features calculated for changing the positions of the plurality of fabricated features, the changed positions of the plurality of fabricated features being configured to align with corresponding features on the additional semiconductor die.

[0160] Clause 6: The method according to Clause 4 or Clause 5 further includes bonding a semiconductor die to the additional semiconductor die.

[0161] Clause 7: The method according to any of the preceding clauses, wherein at least a portion of the pattern of the stress features is further configured to reduce stress in the semiconductor die.

[0162] Clause 8: The method according to any of the preceding clauses, wherein at least a portion of the pattern of the stress features is further configured to increase the stress in the semiconductor die.

[0163] Clause 9: The method according to any of the preceding clauses, wherein stress characteristics are induced in the embedded layer and / or surface layer.

[0164] Clause 10: The method according to any of the preceding clauses, wherein stress characteristics are induced in the compensation layer.

[0165] Clause 11: The method according to Clause 10, wherein the compensation layer is a prestressed layer.

[0166] Clause 12: The method according to any of the preceding clauses, wherein a laser is used to induce stress characteristics.

[0167] Clause 13: The method according to any of the preceding clauses, wherein the stress characteristics include microvoids and / or notches.

[0168] Clause 14: The method according to any of the preceding clauses, wherein the semiconductor die is part of a substrate comprising a plurality of semiconductor dies.

[0169] Clause 15: The method according to any one of Clauses 1 to 3 or Clauses 7 to 14 further comprises bonding a semiconductor die to another semiconductor die.

[0170] Clause 16: The method according to Clause 6 or Clause 15, wherein the bonding comprises at least one selected from the group consisting of van der Waals bonding, metallic bonding and / or hybrid bonding.

[0171] Clause 17: The method according to any one of Clause 6, Clause 15 or Clause 16, wherein at least a portion of the pattern of the applied stress feature compensates for deformation caused by stress at least partially caused by the bonding.

[0172] Clause 18: The method according to any of the preceding clauses, wherein the semiconductor die includes a die containing an integrated circuit.

[0173] Clause 19: A semiconductor die, said semiconductor die being made using the method according to any of the preceding clauses.

[0174] Clause 20: One or more non-transitory machine-readable media having instructions on the non-transitory machine-readable medium, the instructions being configured, when executed by a processor system, to cause the processor system to perform at least the following operations:

[0175] Obtain the measurement location of multiple fabricated features on at least one region of a semiconductor die;

[0176] Obtain the planned positions of the plurality of fabricated features on at least one region of the semiconductor die;

[0177] Determine the difference between the measured locations of the plurality of fabricated features and the planned locations of the plurality of fabricated features; and

[0178] A pattern of stress features is generated, the pattern of stress features being configured to change the position of the plurality of fabricated features based on determined differences.

[0179] Clause 21: The non-transitory machine-readable medium according to Clause 20, wherein the instructions configured to cause the processor system to determine the difference are further configured to cause the processor system to determine a pattern of stress in the semiconductor die, the stress causing the difference between the measured position and the planned position.

[0180] Clause 22: One or more non-transitory machine-readable media having instructions on the non-transitory machine-readable medium, the instructions being configured, when executed by a processor system, to cause the processor system to perform at least the following operations:

[0181] Determine the deformation of a plurality of fabricated features at a measurement location in at least one region of a semiconductor die, the deformation being at least partially caused by stress during bonding or manufacturing; and

[0182] A pattern of stress features is generated, the pattern of stress features being configured to alter the deformation of the plurality of fabricated features by changing the stress present in the semiconductor die.

[0183] Clause 23: A non-transitory machine-readable medium according to any one of Clauses 20 to 22, wherein the instructions configured to cause a processor system to generate a pattern of stress features are further configured to cause the processor system to generate a configuration for changing the semiconductor die by inducing stress features in the semiconductor die.

[0184] Clause 24: The non-transitory machine-readable medium according to Clause 23, wherein the instructions configured to cause the processor system to generate a configuration scheme are also configured to cause the processor system to generate a mapping of stress characteristics relative to the semiconductor die.

[0185] Clause 25: The non-transitory machine-readable medium according to Clause 24, wherein the instructions configured to generate a mapping are further configured to cause the processor system to generate a mapping of stress features relative to the depth in the semiconductor die.

[0186] Clause 26: A non-transitory machine-readable medium according to Clause 24 or Clause 25, wherein the instructions are further configured to cause a processor system to determine, for each stress feature, at least one selected from the following: the intensity of radiation, the number of radiation pulses, and / or the duration of radiation transfer.

[0187] Clause 27: The non-transitory machine-readable medium according to Clause 26, wherein the instructions are further configured to cause the processor system to control the laser based on an optional scheme to deliver radiation to the semiconductor die.

[0188] Clause 28: A non-transitory machine-readable medium according to any one of Clauses 20 to 27, wherein the instructions configured to cause the processor system to generate the pattern of the stress feature are further configured to cause the processor system to generate one or more of the following: stress features for increasing stress, stress features for reducing stress, stress features in a prestressed layer and / or stress features in a compensation layer.

[0189] Clause 29: A non-transitory machine-readable medium according to any one of Clauses 20 to 28, wherein the instructions are further configured to cause a processor system to obtain a target location of the plurality of fabricated features on at least one region of an additional semiconductor die, wherein the pattern of the stress features is further configured to change the measured position of the fabricated features to correspond to the target location.

[0190] Clause 30: A non-transitory machine-readable medium according to Clause 29, wherein the instructions are further configured to cause a processor system to generate a second pattern of stress features, the second pattern of stress features being configured to change the target location based on the measured locations of the plurality of manufactured features.

[0191] Article 31: A system comprising:

[0192] A directional emission system configured to induce stress features in a semiconductor die; and

[0193] Processor system, the processor system being configured to:

[0194] A pattern of stress characteristics is obtained, which is configured to alter the deformation of the semiconductor die; and

[0195] This causes the directional emission system to generate stress features in the semiconductor die based on the pattern of the stress features.

[0196] Clause 32: The system according to Clause 31 further includes a measurement system configured to measure the location of a feature formed in a semiconductor die, wherein the processor is further configured to determine a deformation in the semiconductor die based on the output of the measurement system and to generate a pattern of the stress feature based on the determined deformation.

[0197] Clause 33: The system according to Clause 31 or Clause 32, wherein the semiconductor die is a semiconductor die bonded to another semiconductor die, and wherein the deformation is at least partially caused by stress induced by bonding.

[0198] Clause 34: The system according to any one of Clauses 31 to 33 further includes a bonding system configured to bond a semiconductor die to another semiconductor die, wherein the processor system is further configured to cause the bonding system to bond the semiconductor die to the other semiconductor die before determining the deformation or after causing the directional emission system to generate stress characteristics.

[0199] Article 35: A system according to any one of Articles 31 to 34, wherein the directional emission system is a laser system.

[0200] Clause 36: A fabricated semiconductor die having a pattern of stress features having altered positions of a plurality of fabricated features of the semiconductor die.

[0201] Clause 37: The semiconductor die according to Clause 36 includes additional semiconductor dies bonded to the semiconductor die.

[0202] While the concepts disclosed herein can be used for manufacturing on substrates such as silicon wafers, it should be understood that the disclosed concepts can be used by any type of manufacturing system (e.g., a manufacturing system for manufacturing on substrates other than silicon wafers).

[0203] Furthermore, combinations and sub-combinations of the disclosed elements may include individual embodiments. For example, one or more operations described above may be included in a separate embodiment, or they may be included together in the same embodiment.

[0204] The above description is intended to be illustrative and not restrictive. Therefore, those skilled in the art will understand that modifications can be made as described without departing from the scope of the claims set forth below.

Claims

1. A method comprising: A pattern of stress features is generated, the pattern of stress features being configured to change the position of multiple fabricated features of a semiconductor die; At least a portion of the pattern of the stress features is applied to the semiconductor die to adjust the position of the plurality of fabricated features; as well as The semiconductor die is bonded to another semiconductor die, wherein at least a portion of the pattern of the applied stress feature compensates for deformation caused by stress at least partially resulting from the bonding.

2. The method according to claim 1, further comprising: The measurement positions of the plurality of fabricated features are obtained on at least one region of the semiconductor die; Determine the difference between the measured location of the plurality of manufactured features and the planned location of the plurality of manufactured features; as well as The stress characteristic pattern is generated based on the difference.

3. The method according to claim 2, wherein, Determining the difference includes determining the deformation of the plurality of features at the measurement location, the deformation being at least partially caused by stress in the semiconductor die.

4. The method according to claim 2, wherein, Determining the difference includes determining the difference between the measurement location of the plurality of features and a corresponding feature on another semiconductor die, wherein the semiconductor die is configured for bonding to the other semiconductor die.

5. The method according to claim 4, wherein, The pattern for generating the stress features includes generating a pattern of stress features calculated to alter the positions of the plurality of fabricated features, the altered positions of which are configured to align with corresponding features on the additional semiconductor die.

6. The method of claim 4, further comprising bonding the semiconductor die to the additional semiconductor die.

7. The method according to claim 1, wherein, At least a portion of the pattern of the stress features is further configured to reduce stress in the semiconductor die, or wherein at least a portion of the pattern of the stress features is further configured to increase stress in the semiconductor die.

8. The method according to claim 1, wherein, The stress characteristics are induced in the embedded layer and / or surface layer.

9. The method according to claim 1, wherein, The stress characteristics are induced in a compensation layer, wherein the compensation layer is a prestressed layer.

10. The method according to claim 1, wherein, The stress characteristics include microvoids and / or notches.

11. The method of claim 1, further comprising bonding the semiconductor die to another semiconductor die.

12. The method according to claim 6, wherein, At least a portion of the pattern of the applied stress feature compensates for the deformation caused by the stress at least partially resulting from the bonding.

13. A system comprising: A directional emission system configured to induce stress features in a semiconductor die; and Processor system, the processor system being configured to: A pattern of stress features is obtained, the pattern of stress features being configured to alter the deformation of the semiconductor die; as well as The directional emission system induces the generation of stress features in the semiconductor die based on the pattern of the stress features, wherein the directional emission system includes a femtosecond laser system. The semiconductor die is a semiconductor die bonded to another semiconductor die, and the deformation is at least partially caused by stress induced by the bonding.

14. The system of claim 13, further comprising a measurement system configured to measure the position of a feature fabricated in the semiconductor die. in, The processor is also configured to determine the deformation in the semiconductor die based on the output of the measurement system, and to generate a pattern of the stress characteristics based on the determined deformation.

15. The system of claim 13, further comprising a bonding system configured to bond the semiconductor die to another semiconductor die, and in, The processor system is also configured to cause the bonding system to bond the semiconductor die to the other semiconductor die before the deformation is determined or after the directional firing system generates the stress characteristics.

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